CN101692375A - Method for improving stability of bias field in multi-layer membrane structure in CoFe/AlOx/CoFe/IrMn spin valve structure - Google Patents
Method for improving stability of bias field in multi-layer membrane structure in CoFe/AlOx/CoFe/IrMn spin valve structure Download PDFInfo
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- CN101692375A CN101692375A CN200910164869A CN200910164869A CN101692375A CN 101692375 A CN101692375 A CN 101692375A CN 200910164869 A CN200910164869 A CN 200910164869A CN 200910164869 A CN200910164869 A CN 200910164869A CN 101692375 A CN101692375 A CN 101692375A
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- 229910003321 CoFe Inorganic materials 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910017107 AlOx Inorganic materials 0.000 title claims abstract description 7
- 239000012528 membrane Substances 0.000 title abstract 4
- 230000005291 magnetic effect Effects 0.000 claims abstract description 53
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 31
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 230000004048 modification Effects 0.000 claims abstract description 11
- 238000012986 modification Methods 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 230000005294 ferromagnetic effect Effects 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 abstract description 28
- 230000000694 effects Effects 0.000 abstract description 25
- 238000005516 engineering process Methods 0.000 abstract description 6
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 11
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 6
- 230000005641 tunneling Effects 0.000 description 6
- 229910015136 FeMn Inorganic materials 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910002555 FeNi Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052729 chemical element Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 magnetosphere Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
The invention discloses a method for improving the stability of a bias field in a multi-layer membrane structure in a CoFe/AlOx/CoFe/IrMn spin valve structure, which belongs to the technical field of magnetoelectronics and magnetic recording technology. The method comprises the following steps: (1) manufacturing a multi-layer membrane of the CoFe/AlOx/CoFe/IrMn spin valve structure by deposition; and (2) using a focused gallium ion working station serving as ion radiation equipment for ion radiation modification, wherein the dosage of ion radiation is 1*1,014 ions/cm2, the energy of an ion beam is 30keV, and the current of the ion beam is 1nA. The method can be applied to magnetosensitive units in magnetosensitive elements formed by a magnetic multi-layer membrane, such as a giant magnetoresistive sensor, a magnetic random access memory, a magnetic recording element and the like, and has the advantages of simplicity, good effect and the like.
Description
Affiliated technical field
The present invention relates to a kind of method that improves bias field stability in the magnetic multilayer film structure, belong to magneto-electronics and Magnetographic Technology field.
Background technology
Since 1988, these new ideas of magnetic electron device have appearred in the appearance of the giant magnetic resistor material that the giant magnetic impedance material that changes with external magnetic field along with AC impedance, resistivity change with external magnetic field and the giant magnetostriction material of physical dimension telescopic variation with external magnetic field.Have bigger magneto-resistance effect than present extensive use based on the anisotropic magnetoresistance material sensors based on the magnetoresistive transducer of multilayer film giant magnetic resistor material and spin tunneling junction magnetic resistance material, sensitivity and signal to noise ratio are higher, range of application is wider, can be widely used in information technology, automotive industry, biomedicine, instrument and meter and space technology.At present, in the world will be based on the sub-sensor application of magnetoelectricity of multilayer film giant magnetic resistor material and spin tunneling junction magnetic resistance material in fields such as magnetic-field measurement, current measurement, position measurement, displacement and tachometric survey, strain measurement, DNA detection.
For the magnetoresistance effect that uses in the magnetic electron device, the long-time bias-field that stops can reduce gradually under reverse saturation field, and this point shows particularly evidently when serviceability temperature is higher than room temperature.The pyromagnetic stability problem of this of magnetoresistance effect seriously affects magnetic electron device reliability and useful life.In actual applications, people passed through to select suitable resilient coating, ferromagnetic layer and anti-ferromagnetic layer material and thickness mostly before the preparation film, and the microstructure and the tissue of control multi-layer film material obtain pyromagnetic relatively-better stability magnetoresistance effect.But up to the present the pyromagnetic stability problem of magnetoresistance effect all is not well solved.Current, domestic and international many scholars have carried out the performance impact research of ion irradiation to magnetic thin film/multilayer film, and find that ion irradiation generally can destroy the magnetic of ferromagnetic layer or changes magnetocrystalline anisotropy, strengthens domain wall motion, reduces magnetic couplings intensity and magneto-resistor, as described in the non mask preparation method (200710133293.0) of patent of invention based thin film/multilayer film nano magnetic electron device.
Summary of the invention
The object of the present invention is to provide the method for bias field stability in a kind of CoFe/AlOx/CoFe/IrMn of raising spin valve structure multi-layer film structure, reliability and the useful life that can improve magnetic electron device effectively.
The variation of the material microstructure that the present invention causes by ion irradiation and the interface coupled characteristic that ferromagnetic layer and inverse ferric magnetosphere were adjusted or changed in the diffusion of chemical element between the interface, thus the stability of bias-field in the magnetic multilayer film structure improved.
A kind of method that improves bias field stability in the magnetic multilayer film structure may further comprise the steps:
(1), the sequential aggradation of pressing substrate, resilient coating, magnetosphere, protective layer makes magnetoresistance effect, when the deposition magnetosphere, apply as required and carry out necessary magnetic-field heat treatment after the plane induced magnetic field of 50～500Oe or deposition are finished;
(2), utilize focusing gallium ion work station as ion irradiation equipment, to carrying out the ion irradiation modification by the position of the magnetoresistance effect of above-mentioned (1) one step process preparation or the required modification of magnetic sensing unit of magnetoresistance effect formation thus; Wherein the ion irradiation parameter is: ion beam energy is 10～30keV, and ion beam current is 100pA～5nA;
It is characterized in that: (1) step, described magnetoresistance effect was the structure with the exchange biased magnetic couplings of overhead type, and (2) the step dosage of described ion irradiation is 5 * 10
11～5 * 10
14Ions/cm
2
A kind of method that improves bias field stability in the CoFe/AlOx/CoFe/IrMn spin valve structure multi-layer film structure may further comprise the steps:
(1), utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 4nm, thickness is the CoFe ferromagnetic layer of 3nm, thickness is the AlO of 1nm
xLayer, thickness is the CoFe layer of 3nm, thickness is the IrMn of 12nm and the protective layer Ta that thickness is 12nm, the growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa, sputter high purity argon air pressure: 7 * 10
-2Pa, sputtering power: 120W, the specimen holder speed of rotation: 20rpm, growth temperature: room temperature, growth rate: 0.03～0.12nm/s when deposition, applies 200Oe plane induced magnetic field, and direction is parallel to the face direction;
(2), magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, the dosage of ion irradiation is 1 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.
The present invention adopts focused ion beam technology, and the ion irradiation modification by low dosage makes the microstructure of magnetoresistance effect change and chemical element is optimized interface coupling performance between ferromagnetic layer and inverse ferric magnetosphere in that diffusion takes place between the interface.Compare with the non mask preparation method (200710133293.0) of patent based thin film/multilayer film nano magnetic electron device, difference is that the ion irradiation modification of this patent by low dosage makes the microstructure of magnetoresistance effect change and chemical element is optimized interface coupling performance between ferromagnetic layer and inverse ferric magnetosphere in that diffusion takes place between the interface, and the former removes magnetospheric magnetic to reach the purpose of no mask manufacturing magnetic electron device by heavy dose of ion irradiation.
A kind of method that improves bias field stability in the magnetic multilayer film structure provided by the invention, magnetosensitive sense unit in the giant magnetoresistance electric resistance sensor that also can be applicable to be made of magnetoresistance effect, magnetic RAM, the magnetic recording device equimagnetic Sensitive Apparatus has advantages such as method is simple, effective.
Description of drawings
Fig. 1 is that CoFe/Cu/CoFe/IrMn spin valve structure magnetoresistance effect is through 1 * 10
13Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 2 is that Co/Cu/NiFe/FeMn spin valve structure magnetoresistance effect is through 5 * 10
11Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 3 is CoFe/AlO
x/ CoFe/IrMn spin tunneling junction multilayer film structure is through 1 * 10
14Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Fig. 4 is FeNi/AlO
x/ NiFe/FeMn spin tunneling junction multilayer film structure is through 5 * 10
14Ions/cm
2Gallium ion irradiation after the stability of bias-field.
Embodiment
Further describe the present invention below by example.
Embodiment 1, based on CoFe/Cu/CoFe/IrMn spin valve structure multilayer film
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the CoFe ferromagnetic layer of 5nm; thickness is the Cu layer of 2.5nm; thickness is 5nm CoFe layer, and thickness is the IrMn of 12nm and the protective layer Ta that thickness is 8nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 100Oe plane induced magnetic field, direction is parallel to the face direction.The magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out the ion irradiation modification, and the dosage of ion irradiation is 1 * 10
13Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 1, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 5nm; thickness is the Co ferromagnetic layer of 4nm; thickness is the Cu layer of 2nm; thickness is 10nm NiFe layer, and thickness is the PtMn of 13nm and the protective layer Ta that thickness is 3nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 100Oe plane induced magnetic field, direction is parallel to the face direction.The magnetoresistance effect that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 5 * 10
11Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 2, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 4nm, thickness is the CoFe ferromagnetic layer of 3nm, thickness is the AlO of 1nm
xLayer, thickness is the CoFe layer of 3nm, thickness is the IrMn of 12nm and the protective layer Ta that thickness is 12nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 200Oe plane induced magnetic field, direction is parallel to the face direction.The magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 1 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, the thermal stability of the sample behind irradiation can be significantly improved, as shown in Figure 3, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 3nm, thickness is the FeNi ferromagnetic layer of 10nm, thickness is the AlO of 1nm
xLayer, thickness is the NiFe layer of 10nm, thickness is the FeMn of 10nm and the protective layer Ta that thickness is 13nm.The growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 7 * 10
-2Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rpm; Growth temperature: room temperature; Growth rate: 0.03～0.12nm/s; When deposition, apply 200Oe plane induced magnetic field, direction is parallel to the face direction.The magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, and the dosage of ion irradiation is 5 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.At first on the focused ion beam work station, upload the control program of ion beam and sample stage, rerun procedure carries out ion irradiation to magnetoresistance effect, its thermal stability of sample behind irradiation can be significantly improved, as shown in Figure 4, the big I of the bias-field among the figure utilizes vibrating specimen magnetometer (VSM) to write down the magnetic hysteresis loop method acquisition of magnetoresistance effect.
Claims (1)
1. method that improves bias field stability in the CoFe/AlOx/CoFe/IrMn spin valve structure multi-layer film structure may further comprise the steps:
(1), utilize the high vacuum magnetron sputtering apparatus on the thick monocrystalline substrate of the 1mm that cleans through conventional method successively deposit thickness be the lower buffer layer Ta of 4nm, thickness is the CoFe ferromagnetic layer of 3nm, thickness is the AlO of 1nm
xLayer, thickness is the CoFe layer of 3nm, thickness is the IrMn of 12nm and the protective layer Ta that thickness is 12nm, the growth conditions of above-mentioned magnetic thin film: be equipped with end vacuum: 5 * 10
-7Pa, sputter high purity argon air pressure: 7 * 10
-2Pa, sputtering power: 120W, the specimen holder speed of rotation: 20rpm, growth temperature: room temperature, growth rate: 0.03～0.12nm/s when deposition, applies 200Oe plane induced magnetic field, and direction is parallel to the face direction;
(2), magnetic thin film that deposition is good adopts the focused ion beam work station to carry out radiation modification, the dosage of ion irradiation is 1 * 10
14Ions/cm
2, ion beam energy is 30keV, ion beam current is 1nA.
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|---|---|---|---|
| CN200910164869A CN101692375A (en) | 2008-05-09 | 2008-05-09 | Method for improving stability of bias field in multi-layer membrane structure in CoFe/AlOx/CoFe/IrMn spin valve structure |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161288A (en) * | 2015-08-27 | 2015-12-16 | 中国科学院上海硅酸盐研究所 | Method for enhancing room-temperature ferromagnetism of ZnO-based dilute magnetic semiconductor thin-film |
| CN106784299A (en) * | 2017-02-10 | 2017-05-31 | 中国科学院物理研究所 | Multilayer film heterojunction structure, its preparation method and application |
-
2008
- 2008-05-09 CN CN200910164869A patent/CN101692375A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161288A (en) * | 2015-08-27 | 2015-12-16 | 中国科学院上海硅酸盐研究所 | Method for enhancing room-temperature ferromagnetism of ZnO-based dilute magnetic semiconductor thin-film |
| CN106784299A (en) * | 2017-02-10 | 2017-05-31 | 中国科学院物理研究所 | Multilayer film heterojunction structure, its preparation method and application |
| CN106784299B (en) * | 2017-02-10 | 2020-04-24 | 中国科学院物理研究所 | Multilayer film heterostructure, preparation method and application thereof |
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Open date: 20100407 |