CN104536504A - Self-starting reference circuit - Google Patents
Self-starting reference circuit Download PDFInfo
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- CN104536504A CN104536504A CN201410766853.6A CN201410766853A CN104536504A CN 104536504 A CN104536504 A CN 104536504A CN 201410766853 A CN201410766853 A CN 201410766853A CN 104536504 A CN104536504 A CN 104536504A
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- China
- Prior art keywords
- circuit
- pmos
- self
- nmos tube
- drain electrode
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Abstract
The invention discloses a self-starting reference circuit. The reference circuit is a module frequently used for an analog circuit. Generally, reference circuits have the problem of degeneracy biasing points, namely the reference circuits have the problem that currents transmitted by all transistors during the electrification are zero; the self-starting reference circuit can guide a biasing circuit to a normal working mode from a zero current mode during the electrification, the self-starting reference circuit is simple in structure, a consumed current is very low, and the self-starting reference circuit low in power consumption is achieved.
Description
Technical field
The present invention relates generally to the design field of reference circuit, refers in particular to a kind of self-starting reference circuit.
Background technology
For Analogous Integrated Electronic Circuits, the quality of its performance depends on several factors, and the stability of reference voltage, reference current is also one of them very important factor.The circuit form of reference voltage, reference current is a lot, respectively there are relative merits, bootstrap reference is wherein a kind of circuit form, it is by the voltage generation current on active device, and with the electric current of this circuit as this active device, the reference voltage irrelevant with supply voltage and reference current so can be obtained.But this biasing circuit had nothing to do with power supply of such as bootstrap reference has a very important problem, the i.e. existence of " degeneracy " bias point, this is that himself electric circuit characteristic determines, when namely powering on, the electric current of all crystals pipe transmission is zero, and circuit a kind ofly can keep this state.This characteristic of biasing circuit makes circuit probably lose efficacy, and this just needs a start-up circuit, the object of this circuit be exactly when biasing circuit powers on by it from " zero current " mode boot to normal mode of operation.
Summary of the invention
The problem to be solved in the present invention is just: the technical matters existed for prior art, proposes a kind of self-starting reference circuit.
The solution that the present invention proposes is: the present invention is a kind of reference circuit containing self-starting; " degeneracy " bias point problem that usual reference circuit exists; when namely powering on, the electric current of all crystals pipe transmission is the problem of zero; self-start circuit can by biasing circuit from power on time " zero current " mode boot to normal mode of operation; and this start-up circuit structure is simple; the electric current consumed is extremely low, namely achieves a kind of low-power consumption self-starting reference circuit.
Accompanying drawing explanation
Fig. 1 is circuit theory schematic diagram of the present invention.
Embodiment
Below with reference to accompanying drawing and concrete enforcement, the present invention is described in further details.
As shown in Figure 1, the PMOS M in bootstrap reference circuit
6and M
7measure-alike, PMOS M
8, M
9, M
10measure-alike, suppose M
8, M
9, M
10leakage current I
dSbe respectively I
1, I
2and I
3, then electric current I
1=I
2=I
3, and this current value depends on threshold voltage and the resistance R of metal-oxide-semiconductor
0resistance and metal-oxide-semiconductor technological parameter; Namely
I can be found out
1have nothing to do with power vd D, then reference voltage also has nothing to do with power supply.But this benchmark exists a very serious problem, namely there is " degeneracy " bias point, namely when circuit powers on, all metal-oxide-semiconductors in bootstrap reference all may transmit zero current, i.e. I
1=I
2=I
3=0, and this state can keep always, thus circuit cannot normally be worked, " zero current " mode boot when now just to need bootstrap reference circuit from power on, to normal mode of operation, namely as the start-up circuit in Fig. 1, works as I
1=I
2=I
3when=0, NMOS tube M
3grid voltage is 0, M
3, M
11and M
12all end, PMOS M
6, M
7, M
8, M
9, M
10electric current be all 0, PMOS M
1, M
2conducting, then NMOS tube M
4, M
5grid be high level, M
4, M
5conducting, PMOS M
6, M
7, M
8, M
9, M
10conducting, the electric current that now just existence one is non-vanishing is through PMOS M
6, M
7, M
8, M
9, M
10, so far, bootstrap reference is broken away from from " zero current ", and NMOS tube M
3enter conducting state, due to PMOS M
1, M
2all be down than pipe, i.e. W/L<1, namely conducting resistance is very large, M
3conducting makes M
3drain voltage reduces, and finally makes M
4, M
5cut-off, since then, bootstrap reference enters normal therefrom pattern.In addition, due to PMOS M
1, M
2w/L<<1, so electric current is extremely low on this branch road, negligible.
In sum, this circuit can by bootstrap reference circuit from power on time " zero current " mode boot to normal mode of operation, and this start-up circuit structure is simple, and the electric current of consumption is extremely low, namely achieves a kind of self-starting reference circuit.
Claims (1)
1. a self-starting reference circuit, is characterized in that:
Circuit is made up of start-up circuit and bootstrap reference; Start-up circuit is by PMOS M
1, PMOS M
2, NMOS tube M
3, NMOS tube M
4, NMOS tube M
5composition, wherein PMOS M
1, M
2grounded-grid, PMOS M
1source electrode meets power vd D, and drain electrode meets PMOS M
2source electrode, PMOS M
2drain electrode meets NMOS tube M
3drain electrode and NMOS tube M
4, M
5grid, NMOS tube M
3, M
4, M
5source ground; NMOS tube M
4drain electrode be connected to PMOS M
6grid, drain electrode and PMOS M
8source electrode; NMOS tube M
5drain electrode be connected to PMOS M
10grid, drain electrode and PMOS M
8, M
9grid and NMOS tube M
12drain electrode; The M of PMOS
8drain electrode is connected to resistance R
0one end, R
0other end ground connection; PMOS M
9source electrode is connected to M
7drain electrode, M
9drain electrode be connected to NMOS tube M
11drain electrode, grid and NMOS tube M
12, M
3grid, NMOS tube M
11and M
12source ground, PMOS M
6, M
7, M
10source electrode meet power vd D.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410766853.6A CN104536504B (en) | 2014-12-12 | 2014-12-12 | A kind of self-starting reference circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410766853.6A CN104536504B (en) | 2014-12-12 | 2014-12-12 | A kind of self-starting reference circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104536504A true CN104536504A (en) | 2015-04-22 |
CN104536504B CN104536504B (en) | 2016-04-06 |
Family
ID=52852046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410766853.6A Active CN104536504B (en) | 2014-12-12 | 2014-12-12 | A kind of self-starting reference circuit |
Country Status (1)
Country | Link |
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CN (1) | CN104536504B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105867499A (en) * | 2016-04-22 | 2016-08-17 | 福州福大海矽微电子有限公司 | Circuit and method for achieving low pressure and high precision of reference voltage source |
CN107402592A (en) * | 2016-12-01 | 2017-11-28 | 上海韦玏微电子有限公司 | Start-up circuit |
CN109947165A (en) * | 2019-01-31 | 2019-06-28 | 敦泰电子有限公司 | Voltage reference source circuit and low-power dissipation power supply system |
Citations (6)
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US6320364B1 (en) * | 1999-10-01 | 2001-11-20 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Current source circuit |
US20060087367A1 (en) * | 2004-10-22 | 2006-04-27 | Matsushita Electric Industrial Co., Ltd. | Current source circuit |
US20060226892A1 (en) * | 2005-04-12 | 2006-10-12 | Stmicroelectronics S.A. | Circuit for generating a reference current |
CN101430574A (en) * | 2007-11-06 | 2009-05-13 | 奇景光电股份有限公司 | Control circuit for a bandgap circuit |
CN102073335A (en) * | 2011-01-21 | 2011-05-25 | 西安华芯半导体有限公司 | Pure metal-oxide-semiconductor (MOS) structure high-precision voltage reference source |
CN103001613A (en) * | 2012-11-02 | 2013-03-27 | 长沙景嘉微电子股份有限公司 | Starting circuit applied to bootstrap reference |
-
2014
- 2014-12-12 CN CN201410766853.6A patent/CN104536504B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320364B1 (en) * | 1999-10-01 | 2001-11-20 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Current source circuit |
US20060087367A1 (en) * | 2004-10-22 | 2006-04-27 | Matsushita Electric Industrial Co., Ltd. | Current source circuit |
US20060226892A1 (en) * | 2005-04-12 | 2006-10-12 | Stmicroelectronics S.A. | Circuit for generating a reference current |
CN101430574A (en) * | 2007-11-06 | 2009-05-13 | 奇景光电股份有限公司 | Control circuit for a bandgap circuit |
CN102073335A (en) * | 2011-01-21 | 2011-05-25 | 西安华芯半导体有限公司 | Pure metal-oxide-semiconductor (MOS) structure high-precision voltage reference source |
CN103001613A (en) * | 2012-11-02 | 2013-03-27 | 长沙景嘉微电子股份有限公司 | Starting circuit applied to bootstrap reference |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105867499A (en) * | 2016-04-22 | 2016-08-17 | 福州福大海矽微电子有限公司 | Circuit and method for achieving low pressure and high precision of reference voltage source |
CN105867499B (en) * | 2016-04-22 | 2017-10-10 | 福州福大海矽微电子有限公司 | A kind of circuit and method for realizing reference voltage source low-voltage high-precision |
CN107402592A (en) * | 2016-12-01 | 2017-11-28 | 上海韦玏微电子有限公司 | Start-up circuit |
CN107402592B (en) * | 2016-12-01 | 2018-11-20 | 上海韦玏微电子有限公司 | Start-up circuit |
CN109947165A (en) * | 2019-01-31 | 2019-06-28 | 敦泰电子有限公司 | Voltage reference source circuit and low-power dissipation power supply system |
Also Published As
Publication number | Publication date |
---|---|
CN104536504B (en) | 2016-04-06 |
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