CN104535197A - Thermopile infrared detector and manufacturing method thereof - Google Patents
Thermopile infrared detector and manufacturing method thereof Download PDFInfo
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- CN104535197A CN104535197A CN201410842348.5A CN201410842348A CN104535197A CN 104535197 A CN104535197 A CN 104535197A CN 201410842348 A CN201410842348 A CN 201410842348A CN 104535197 A CN104535197 A CN 104535197A
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Abstract
The invention provides a thermopile infrared detector and a manufacturing method of the thermopile infrared detector. The thermopile infrared detector comprises a substrate, a dielectric supporting film, a thermopile, a metamaterial structure, a middle dielectric layer and a metal micro structure layer, wherein a cavity is formed in the substrate, the dielectric supporting film is located above the cavity and supported by the substrate, the thermopile is located on the dielectric supporting film above the cavity, the metamaterial structure is located above the thermopile and comprises a metal plane reflecting mirror, the middle dielectric layer is located on the metal plane reflecting mirror, the metal micro structure layer is located on the middle dielectric layer and comprises one or more structural period units, and each structural period unit comprises one or more geometric figure units having the light adsorption enhance effect within the infrared spectrum range. Due to the thermopile infrared detector, perform absorption within the infrared band broad spectrum range can be achieved, the infrared adsorption rate and the responding rate of the thermopile infrared detector can be improved, and the manufacturing method is compatible with a conventional CMOS technology.
Description
Technical field
The present invention relates to thermopile IR detector technology, particularly relate to and a kind ofly utilize metamaterial structure as infrared absorber to thermopile IR detector strengthening light absorption and preparation method thereof.
Background technology
Thermopile IR detector studies the earliest and one of practical infrared imaging device, as a kind of infrared eye of uncooled IRFPA type, because of its have size little, lightweight, without the need to refrigeration, sensitivity advantages of higher, be widely used in security monitoring, therapeutic treatment, life detection and consumer products etc., and its development is also more rapid.
The principle of work of thermopile detector is mainly based on Seebeck effect: two kinds of different materials or identical but object A with B that work function is different of material are connected at thermojunction end, if there is temperature difference △ T between thermojunction and cold-zone, open circuit potential difference △ V so will be produced between two beams of cold-zone, also known as thermoelectric effect, temperature difference △ T can be reflected by detecting this electric potential difference △ V, and the process of the process detecting infrared signal namely " light-Re-electricity " two-stage sensing and transducing.
Thermopile IR detector mainly comprises thermoelectric pile and infrared absorber.Wherein, the infrared light of infrared absorber radiation-absorbing, causes the temperature of infrared absorber to raise, and the position corresponding to infrared absorber is the thermojunction district of thermoelectric pile, and underlayer temperature corresponding to cold junction district is usually consistent with environment temperature, thus cause the temperature difference at thermoelectric pile two ends.Utilize infrared absorption layer to the high-selenium corn characteristic of infrared radiation spectrum, the performance of detector can be improved.
In order to improve the ir-absorbance of thermopile IR detector, generally apply the material that one deck high IR absorbs in thermojunction district, as coatings such as Jin Hei and Yin Hei.But the manufacture craft of this scheme relates to the operations such as the aggegation of evaporation of metal and metal nanoparticle, with the poor compatibility of stand CMOS.
Directly utilize dielectric layer material (such as monox and silicon nitride) in CMOS technology as infrared absorbing material, though blacking technique can be avoided, but the absorptivity of these dielectric layer material in conventional infrared wavelength range is not high, causes the responsiveness of infrared eye limited.
In addition, also there is the multiple structure that can be used as infrared absorption district in prior art to strengthen light absorption, such as above infrared absorption layer, add a condenser lens.But lens curvature and be difficult to control with chip distance, easily produces departing from of focusing on.
Again for example, the resonance effect produced when having cavity resonator structure to utilize 1/4 wavelength of thickness of dielectric layers and incident infrared light to match strengthens light absorption.But by the restriction of condition of resonance, this structure just has enhancing to the optical radiation of a certain specific wavelength.
Although above-mentioned technology both provides the enhancing of infrared absorption to a certain degree, but the lifting of the compatibility of its manufacture craft and CMOS technology and infrared absorption performance also needs further exploration, needs more effective technical scheme.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of thermopile IR detector and preparation method thereof, the perfection that can realize infrared band wide spectral range absorbs, and then improve ir-absorbance and the responsiveness of thermopile detector, and its method for making also can be compatible with stand CMOS.
For solving the problems of the technologies described above, the invention provides a kind of thermopile IR detector, comprising:
Substrate, has cavity in described substrate;
Dielectric support film, to be positioned at above described cavity and by described substrate supports;
Thermoelectric pile, is positioned on the dielectric support film above described cavity;
Metamaterial structure, be positioned at above described thermoelectric pile, described metamaterial structure comprises:
Metal flat reflector;
Middle dielectric layer, is positioned on described metal flat reflector;
Metal micro structure layer, be positioned on described middle dielectric layer, wherein, described metal micro structure layer comprises one or more structural cycle unit, and described structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum.
According to one embodiment of present invention, the impedance of described metamaterial structure is 350 ohm ~ 400 ohm.
According to one embodiment of present invention, the quantity of described middle dielectric layer and metal micro structure layer is multiple, described multiple middle dielectric layer and multiple metal micro structure layer, in vertical direction in spaced mode successively cascade, are stacked on described metal flat reflector.
According to one embodiment of present invention, in described multiple metal micro structure layer, in different metal micro structure layers, different structural cycle unit is comprised, to absorb the infrared light of different-waveband respectively.
According to one embodiment of present invention, described thermopile IR detector also comprises:
Passivation layer, covers described thermoelectric pile, and described metamaterial structure is positioned on described passivation layer.
According to one embodiment of present invention, the material of described passivation layer is monox or silicon nitride, or described passivation layer is the composite dielectric film that monox and silicon nitride are formed.
According to one embodiment of present invention, the quantity of described structural cycle unit is multiple, and described multiple structural cycle unit is cycle arrangement in the two-dimensional direction.
According to one embodiment of present invention, described multiple structural cycle unit arrangement cycle is in the two-dimensional direction 1 micron ~ 10 microns.
According to one embodiment of present invention, the thickness of described metal micro structure layer is 0.01 micron ~ 0.2 micron.
According to one embodiment of present invention, the material of described metal micro structure layer is any one or the combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
According to one embodiment of present invention, the thickness of described metal flat reflector is greater than 50 nanometers.
According to one embodiment of present invention, the material of described metal flat reflector is any one or the combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
According to one embodiment of present invention, the thickness of described middle dielectric layer is 10 nanometer ~ 1500 nanometers.
According to one embodiment of present invention, the material of described middle dielectric layer is any one or the combination in any in silicon dioxide, silicon nitride, silit, silicon, germanium, polyimide, alundum (Al2O3).
According to one embodiment of present invention, the material of described dielectric support film is monox or silicon nitride, or described dielectric support film is the composite dielectric film that monox and silicon nitride are formed.
According to one embodiment of present invention, described thermoelectric pile comprises the first thermocouple bar and the second thermocouple bar with described first thermocouple bar corresponding matching, and described first thermocouple bar and the second thermocouple bar part connect, and part passes through insulator separation.
According to one embodiment of present invention, the material of described first thermocouple bar and the second thermocouple bar is Al and polysilicon, Ti and polysilicon, Au and polysilicon, or N-type doped polycrystalline silicon and P type doped polycrystalline silicon.
In order to solve the problem, present invention also offers a kind of method for making of thermopile IR detector, comprising:
Substrate is provided;
Form dielectric support film over the substrate;
Described dielectric support film forms thermoelectric pile;
Metal flat reflector, middle dielectric layer and metal micro structure layer is formed successively above described thermoelectric pile, to form metamaterial structure, wherein, described metal micro structure layer comprises one or more structural cycle unit, and described structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum;
Described substrate is etched and/or wet etching, to form cavity below described thermoelectric pile.
According to one embodiment of present invention, described substrate is etched and/or wet etching, comprises to form cavity below described thermoelectric pile:
Around described thermoelectric pile and metamaterial structure, etching forms etched hole, and the bottom-exposed of described etched hole goes out described substrate;
Etched and/or wet etching by the front of described etched hole to described substrate, to form described cavity.
According to one embodiment of present invention, described substrate is etched and/or wet etching, comprises to form cavity below described thermoelectric pile:
The back side of described substrate is etched and/or wet etching, to form described cavity.
According to one embodiment of present invention, the impedance of described metamaterial structure is 350 ohm ~ 400 ohm.
According to one embodiment of present invention, the quantity of described middle dielectric layer and metal micro structure layer is multiple, described multiple middle dielectric layer and multiple metal micro structure layer, in vertical direction in spaced mode successively cascade, are stacked on described metal flat reflector.
According to one embodiment of present invention, in described multiple metal micro structure layer, in different metal micro structure layers, different structural cycle unit is comprised, to absorb the infrared light of different-waveband respectively.
According to one embodiment of present invention, before forming described metamaterial structure, described method for making also comprises: form passivation layer, described passivation layer covers described thermoelectric pile, and described metamaterial structure is positioned on described passivation layer.
According to one embodiment of present invention, the material of described passivation layer is monox or silicon nitride, or described passivation layer is the composite dielectric film that monox and silicon nitride are formed.
According to one embodiment of present invention, the quantity of described structural cycle unit is multiple, and described multiple structural cycle unit is cycle arrangement in the two-dimensional direction.
According to one embodiment of present invention, described multiple structural cycle unit arrangement cycle is in the two-dimensional direction 1 micron ~ 10 microns.
According to one embodiment of present invention, the thickness of described metal micro structure layer is 0.01 micron ~ 0.2 micron.
According to one embodiment of present invention, the material of described metal micro structure layer is any one or the combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
According to one embodiment of present invention, the thickness of described metal flat reflector is greater than 50 nanometers.
According to one embodiment of present invention, the material of described metal flat reflector is any one or the combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
According to one embodiment of present invention, the thickness of described middle dielectric layer is 10 nanometer ~ 1500 nanometers.
According to one embodiment of present invention, the material of described middle dielectric layer is any one or the combination in any in silicon dioxide, silicon nitride, silit, silicon, germanium, polyimide, alundum (Al2O3).
According to one embodiment of present invention, the material of described dielectric support film is monox or silicon nitride, or described dielectric support film is the composite dielectric film that monox and silicon nitride are formed.
According to one embodiment of present invention, described thermoelectric pile comprises the first thermocouple bar and the second thermocouple bar with described first thermocouple bar corresponding matching, and described first thermocouple bar and the second thermocouple bar part connect, and part passes through insulator separation.
According to one embodiment of present invention, the material of described first thermocouple bar and the second thermocouple bar is Al and polysilicon, Ti and polysilicon, Au and polysilicon, or N-type doped polycrystalline silicon and P type doped polycrystalline silicon.
Compared with prior art, the present invention has the following advantages:
The thermopile IR detector of the embodiment of the present invention utilizes metal flat reflector stacked successively, middle dielectric layer and metal micro structure layer form metamaterial structure, wherein, metal micro structure layer has multiple structural cycle unit, each structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum, such metamaterial structure can obtain the regulation and control of effective electromagnetic parameter, the impedance matching on surface and the suppression completely of transmission can be realized by optimizing, there is the superabsorbent characteristic resonating and cause, thus to achieve in infrared band wide spectral range the light absorption of 100% nearly, be conducive to the ir-absorbance and the responsiveness that improve thermopile detector.
In the method for making of the thermopile IR detector of the embodiment of the present invention; metal flat reflector in metamaterial structure, middle dielectric layer and metal micro structure layer can utilize the process in stand CMOS to be formed; can be compatible with stand CMOS, be easy to large-scale production.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of thermopile IR detector according to a first embodiment of the present invention;
Fig. 2 is the vertical view of thermopile IR detector according to a first embodiment of the present invention;
Fig. 3 A is the planar structure schematic diagram of a kind of metal micro structure layer in thermopile IR detector according to a first embodiment of the present invention;
Fig. 3 B is the planar structure schematic diagram of another kind of metal micro structure layer in thermopile IR detector according to a first embodiment of the present invention;
Fig. 3 C is the planar structure schematic diagram of another metal micro structure layer in thermopile IR detector according to a first embodiment of the present invention;
Fig. 4 A to Fig. 4 E is the cross-sectional view that in the method for making of thermopile IR detector according to a first embodiment of the present invention, each step is corresponding;
Fig. 5 is the infrared absorption spectrum of thermopile IR detector according to a first embodiment of the present invention;
Fig. 6 is the cross-sectional view of thermopile IR detector according to a second embodiment of the present invention;
Fig. 7 is the cross-sectional view of thermopile IR detector according to a third embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described, but should not limit the scope of the invention with this.
First embodiment
With reference to figure 1, this thermopile IR detector can comprise: substrate 1, has cavity 11 in substrate 1; Dielectric support film 2, to be positioned at above cavity 11 and to be supported by substrate 1; Thermoelectric pile, is positioned on the dielectric support film 2 above cavity 11; Passivation layer 6, cover heating pile; Metamaterial structure 90, is positioned on the passivation layer 6 above thermoelectric pile.Wherein, substrate 1 and metamaterial structure 90 are respectively as the cold junction district of thermoelectric pile and thermojunction district.
Wherein, substrate 1 can be the various Semiconductor substrate in stand CMOS, such as, can be monocrystalline silicon piece or soi wafer etc.
The material of dielectric support film 2 can be monox or silicon nitride, or dielectric support film 2 can be the composite dielectric film that monox and silicon nitride are formed.
Thermoelectric pile can be conventional structure of the prior art.As a nonrestrictive example, this thermoelectric pile can comprise the first thermocouple bar 4 and connect with the second thermocouple bar 5, first thermocouple bar 4 of the first thermocouple bar 4 corresponding matching and the second thermocouple bar 5 part, and part is isolated by insulation course 3.
Insulation course 3 can be insulating material conventional in CMOS technology, such as monox, silicon nitride etc.The material adapted of the first thermocouple bar 4 and the second thermocouple bar 5 can be the collocation of the collocation of Al and polysilicon, the collocation of Ti and polysilicon, Au and polysilicon, or the collocation of N-type doped polycrystalline silicon and P type doped polycrystalline silicon, or other suitable material adapteds.
The material of passivation layer 6 can be monox or silicon nitride, or passivation layer 6 can be the composite dielectric film that monox and silicon nitride are formed.
Metamaterial structure 90 can comprise: metal flat reflector 7, is positioned on the passivation layer 6 above thermoelectric pile; Middle dielectric layer 8, is positioned on metal flat reflector 7; Metal micro structure layer 9, is positioned on middle dielectric layer 8.Wherein, metal micro structure layer comprises one or more structural cycle unit, and this structural cycle unit comprises one or more geometric figure unit, and this geometric figure unit has light absorption enhancement effect in infrared range of spectrum.
As a preferred embodiment, the impedance of metamaterial structure 90
it is 350 ohm ~ 400 ohm.More preferably, the impedance Z of metamaterial structure 90 equals or close to 377 ohm.Wherein, ε, μ are respectively specific inductive capacity and the magnetic permeability of metamaterial structure 90.
The thickness of metal flat reflector 7 is preferably greater than 50 nanometers, and the material of metal flat reflector 7 can be any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
The thickness of middle dielectric layer 8 is preferably 10 nanometer ~ 1500 nanometers, and the material of middle dielectric layer 8 can be any one or combination in any in silicon dioxide, silicon nitride, silit, silicon, germanium, polyimide, alundum (Al2O3).
The thickness of metal micro structure layer 9 is preferably 0.01 micron ~ 0.2 micron, and the material of metal micro structure layer 9 is preferably any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
Have etched hole 10 around metamaterial structure 90, this etched hole 10 runs through passivation layer 6, insulation course 3 and dielectric support film 2, is communicated with cavity 11.
Composition graphs 1 and Fig. 2, dielectric support film 2, insulation course 3 and passivation layer 6 can be patterned into central part and from central part to extraradial multiple extension, be etched hole 10 between each extension.Thermoelectric pile and metamaterial structure 90 are positioned on central part.Multiple extension connects with substrate 1, thus forms support to central part.
Still with reference to figure 1, can comprise multiple structural cycle unit in metal micro structure layer 9, multiple structural cycle unit can be 1 micron ~ 10 microns in the arrangement cycle on two-dimensional directional (such as, orthogonal X-direction and Y-direction).Each structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum.
Show a kind of planar structure of metal micro structure layer 9 with reference to figure 3A, Fig. 3 A, comprise multiple structural cycle unit 91, multiple structural cycle unit 91 is cycle arrangement in the two-dimensional direction, and arrangement cycle P1 and P2 in the two directions can be 1 micron ~ 10 microns.Comprising 4 kinds of geometric figure unit in each structural cycle unit 91, as a nonrestrictive example, is larger rectangle, circle, less rectangle and parallelogram respectively.Certainly, the shape of geometric figure unit can also be other shapes, such as triangle, L-type, U-shaped etc.
Show the planar structure of another kind of metal micro structure layer 9 with reference to figure 3B, Fig. 3 B, comprise multiple structural cycle unit 91, multiple structural cycle unit 91 is cycle arrangement in the two-dimensional direction.Comprising 2 kinds of geometric figure unit in each structural cycle unit 91, as a nonrestrictive example, is rectangle and circle shape respectively.Certainly, the shape of geometric figure unit can also be other shapes, such as parallelogram, triangle, L-type, U-shaped etc.
Show the planar structure of another metal micro structure layer 9 with reference to figure 3C, Fig. 3 C, comprise multiple structural cycle unit 91, multiple structural cycle unit 91 is cycle arrangement in the two-dimensional direction.Comprising 2 kinds of geometric figure unit in each structural cycle unit 91, as a nonrestrictive example, is circular and rectangle respectively.Certainly, the shape of geometric figure unit can also be other shapes, such as parallelogram, triangle, L-type, U-shaped etc.
According to the shape, size etc. of geometric figure unit, the infrared spectrum wavelength coverage of its correspondence can be determined, multiple different geometric figure unit covers multiple different infrared spectrum wavelength coverage, namely all has light absorption enhancement effect for capped infrared spectrum wavelength coverage.
In metal micro structure layer 9 shown in Fig. 3 A, Fig. 3 B and Fig. 3 C, the multiple structural cycle unit 91 in metal micro structure layer 9 are same structural cycle unit, are also that the geometric figure unit that each structural cycle unit 91 comprises is identical.It should be noted that, in metal micro structure layer 9, multiple structural cycle unit 91 also can belong to different types of structural cycle unit, is also that the shape, size, quantity etc. of the geometric figure unit that different structural cycle unit 91 comprises can be different.
Be described in detail below with reference to the method for making of Fig. 4 A to Fig. 4 E to the thermopile IR detector of the first embodiment.
With reference to figure 4A, form dielectric support film 2 on substrate 1.The formation method of dielectric support film 2 can be thin-film deposition.
With reference to figure 4B, dielectric support film 2 forms thermoelectric pile.Such as, the method for thin-film deposition and micro-nano technology can be used, form the first thermocouple bar 4, insulation course 3 and the second thermocouple bar 5 needed for thermoelectric pile successively.
With reference to figure 4C, thermoelectric pile forms passivation layer 6.Such as, passivation layer 6 can be formed by the method for thin-film deposition.
With reference to figure 4D, passivation layer 6 is formed metal flat reflector 7, middle dielectric layer 8 and metal micro structure layer 9 successively, and three defines metamaterial structure.Such as, the method for thin-film deposition and micro-nano technology can be adopted, prepare metal flat reflector 7, middle dielectric layer 8 and metal micro structure layer 9 successively.
With reference to figure 4E, form etched hole 10 around thermoelectric pile and metamaterial structure, the formation method of etched hole 10 can be such as photoetching, etching.Etched and/or wet etching by the front of etched hole 10 pairs of substrates 10 again, to form cavity 11.
After forming cavity 11, the dielectric support film 2 above cavity 11 becomes the suspension film structure of carrying thermoelectric pile, passivation layer 6 and metamaterial structure, thus completes the release of thermopile device.
As a preferred embodiment, the material of metal flat reflector 7 and metal micro structure layer 9 is aluminium.Refractive index is calculated by Drude model and obtains, and as the structural parameters adopting FDTD algorithm institute optimal design, the preferred thickness of metal flat reflector 7 and metal micro structure layer 9 is respectively 0.1 micron and 0.05 micron.The material of middle dielectric layer 8 is silicon dioxide (refractive index n=1.95), and thickness is 0.29 micron.Metal flat reflector 7, middle dielectric layer 8 and metal micro structure layer 9 form metamaterial structure jointly, because resonance effects makes electromagnetic field spatially be gathered in middle dielectric layer 8, cause the enhancing of light absorption, thus define perfect light absorber.
With reference to figure 5, adopt above-mentioned preferred disposition and parameter, achieve the high-selenium corn at 4 ~ 13 microns of wide spectral ranges.As can be seen from Figure 5, the absorption at resonant frequency place is close to 100%.
Second embodiment
Show the cross-section structure of the thermopile IR detector of the second embodiment with reference to figure 6, Fig. 6, its structure is substantially identical with the first embodiment, and difference is, cavity 11 has unlimited opening at the back side of substrate 1.
The thermopile IR detector method for making of the second embodiment is also substantially identical with the first embodiment, and difference is the formation method of cavity 11, and the delivery mode of thermopile device is different.After the making completing metamaterial structure, the back side of substrate 1 is etched and/or wet etching, thus form cavity 11 in substrate 1 below thermoelectric pile.After forming cavity, the dielectric support film 2 above cavity 11 forms suspension film structure, and dielectric support film 2, thermoelectric pile and passivation layer 6 forms sandwich structure, thus release thermopile device.Wherein, metal flat reflector 7, middle dielectric layer 8 and metal micro structure layer 9 form the metamaterial structure with the superabsorbent characteristic caused that resonates jointly, can form perfect absorption to the infrared spectrum of proper range.
More information about the thermopile IR detector of the second embodiment see the associated description of the first embodiment, can repeat no more here.
3rd embodiment
The cross-section structure of the thermopile IR detector of the 3rd embodiment is shown with reference to figure 7, Fig. 7.As a kind of preferred embodiment, on the direction perpendicular to substrate 1 surface, be stackingly provided with multiple middle dielectric layer 8 and multiple metal micro structure layer 9, spaced between multiple middle dielectric layer 8 and metal micro structure layer 9.In other words, multiple middle dielectric layer 8 and multiple metal micro structure layer 9 are in vertical direction in spaced mode successively cascade.Such as, 3 middle dielectric layers 8 and 3 metal micro structure layers 9 are contained in Fig. 7.
Wherein, each middle dielectric layer 8 can be different dielectric material, also can be the different same dielectric material of thickness.The metal micro structure layer 9 of different layers can have different planar structures, such as, same metal micro structure layer 9 comprises same or structural cycle unit not of the same race, and in different metal micro structure layers 9, comprise different structural cycle unit, thus each metal micro structure layer 9 can be made to absorb the infrared light of different-waveband respectively, improve ir-absorbance and the responsiveness of whole thermopile detector.
More information about the thermopile IR detector of the 3rd embodiment see the associated description of the first embodiment, can repeat no more here.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Therefore, every content not departing from technical solution of the present invention, just according to technical spirit of the present invention to any simple amendment made for any of the above embodiments, equivalent conversion, all still belong in the protection domain of technical solution of the present invention.
Claims (36)
1. a thermopile IR detector, is characterized in that, comprising:
Substrate, has cavity in described substrate;
Dielectric support film, to be positioned at above described cavity and by described substrate supports;
Thermoelectric pile, is positioned on the dielectric support film above described cavity;
Metamaterial structure, be positioned at above described thermoelectric pile, described metamaterial structure comprises:
Metal flat reflector;
Middle dielectric layer, is positioned on described metal flat reflector;
Metal micro structure layer, be positioned on described middle dielectric layer, wherein, described metal micro structure layer comprises one or more structural cycle unit, and described structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum.
2. thermopile IR detector according to claim 1, is characterized in that, the impedance of described metamaterial structure is 350 ohm ~ 400 ohm.
3. thermopile IR detector according to claim 1, it is characterized in that, the quantity of described middle dielectric layer and metal micro structure layer is multiple, described multiple middle dielectric layer and multiple metal micro structure layer, in vertical direction in spaced mode successively cascade, are stacked on described metal flat reflector.
4. thermopile IR detector according to claim 3, is characterized in that, in described multiple metal micro structure layer, comprises different structural cycle unit in different metal micro structure layers, to absorb the infrared light of different-waveband respectively.
5. thermopile IR detector according to claim 1, is characterized in that, also comprises:
Passivation layer, covers described thermoelectric pile, and described metamaterial structure is positioned on described passivation layer.
6. thermopile IR detector according to claim 5, is characterized in that, the material of described passivation layer is monox or silicon nitride, or described passivation layer is the composite dielectric film that monox and silicon nitride are formed.
7. thermopile IR detector according to claim 1, is characterized in that, the quantity of described structural cycle unit is multiple, and described multiple structural cycle unit is cycle arrangement in the two-dimensional direction.
8. thermopile IR detector according to claim 7, is characterized in that, described multiple structural cycle unit arrangement cycle is in the two-dimensional direction 1 micron ~ 10 microns.
9. thermopile IR detector according to claim 1, is characterized in that, the thickness of described metal micro structure layer is 0.01 micron ~ 0.2 micron.
10. thermopile IR detector according to claim 1, is characterized in that, the material of described metal micro structure layer is any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
11. thermopile IR detectors according to claim 1, is characterized in that, the thickness of described metal flat reflector is greater than 50 nanometers.
12. thermopile IR detectors according to claim 1, is characterized in that, the material of described metal flat reflector is any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
13. thermopile IR detectors according to claim 1, is characterized in that, the thickness of described middle dielectric layer is 10 nanometer ~ 1500 nanometers.
14. thermopile IR detectors according to claim 1, is characterized in that, the material of described middle dielectric layer is any one or combination in any in silicon dioxide, silicon nitride, silit, silicon, germanium, polyimide, alundum (Al2O3).
15. thermopile IR detectors according to claim 1, is characterized in that, the material of described dielectric support film is monox or silicon nitride, or described dielectric support film is the composite dielectric film that monox and silicon nitride are formed.
16. thermopile IR detectors according to claim 1, it is characterized in that, described thermoelectric pile comprises the first thermocouple bar and the second thermocouple bar with described first thermocouple bar corresponding matching, and described first thermocouple bar and the second thermocouple bar part connect, and part passes through insulator separation.
17. thermopile IR detectors according to claim 16, is characterized in that, the material of described first thermocouple bar and the second thermocouple bar is Al and polysilicon, Ti and polysilicon, Au and polysilicon, or N-type doped polycrystalline silicon and P type doped polycrystalline silicon.
The method for making of 18. 1 kinds of thermopile IR detectors, is characterized in that, comprising:
Substrate is provided;
Form dielectric support film over the substrate;
Described dielectric support film forms thermoelectric pile;
Metal flat reflector, middle dielectric layer and metal micro structure layer is formed successively above described thermoelectric pile, to form metamaterial structure, wherein, described metal micro structure layer comprises one or more structural cycle unit, and described structural cycle unit comprises the geometric figure unit that one or more have light absorption enhancement effect in infrared range of spectrum;
Described substrate is etched and/or wet etching, to form cavity below described thermoelectric pile.
19. method for makings according to claim 18, is characterized in that, etch and/or wet etching described substrate, comprise to form cavity below described thermoelectric pile:
Around described thermoelectric pile and metamaterial structure, etching forms etched hole, and the bottom-exposed of described etched hole goes out described substrate;
Etched and/or wet etching by the front of described etched hole to described substrate, to form described cavity.
20. method for makings according to claim 18, is characterized in that, etch and/or wet etching described substrate, comprise to form cavity below described thermoelectric pile:
The back side of described substrate is etched and/or wet etching, to form described cavity.
21. method for makings according to claim 18, is characterized in that, the impedance of described metamaterial structure is 350 ohm ~ 400 ohm.
22. method for makings according to claim 18, it is characterized in that, the quantity of described middle dielectric layer and metal micro structure layer is multiple, described multiple middle dielectric layer and multiple metal micro structure layer, in vertical direction in spaced mode successively cascade, are stacked on described metal flat reflector.
23. method for makings according to claim 18, is characterized in that, in described multiple metal micro structure layer, comprise different structural cycle unit in different metal micro structure layers, to absorb the infrared light of different-waveband respectively.
24. method for makings according to claim 18, is characterized in that, also comprise before forming described metamaterial structure:
Form passivation layer, described passivation layer covers described thermoelectric pile, and described metamaterial structure is positioned on described passivation layer.
25. method for makings according to claim 24, is characterized in that, the material of described passivation layer is monox or silicon nitride, or described passivation layer is the composite dielectric film that monox and silicon nitride are formed.
26. method for makings according to claim 18, is characterized in that, the quantity of described structural cycle unit is multiple, and described multiple structural cycle unit is cycle arrangement in the two-dimensional direction.
27. method for makings according to claim 26, is characterized in that, described multiple structural cycle unit arrangement cycle is in the two-dimensional direction 1 micron ~ 10 microns.
28. method for makings according to claim 18, is characterized in that, the thickness of described metal micro structure layer is 0.01 micron ~ 0.2 micron.
29. method for makings according to claim 18, is characterized in that, the material of described metal micro structure layer is any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
30. method for makings according to claim 18, is characterized in that, the thickness of described metal flat reflector is greater than 50 nanometers.
31. method for makings according to claim 18, is characterized in that, the material of described metal flat reflector is any one or combination in any in gold, silver, copper, aluminium, titanium, nickel and chromium.
32. method for makings according to claim 18, is characterized in that, the thickness of described middle dielectric layer is 10 nanometer ~ 1500 nanometers.
33. method for makings according to claim 18, is characterized in that, the material of described middle dielectric layer is any one or combination in any in silicon dioxide, silicon nitride, silit, silicon, germanium, polyimide, alundum (Al2O3).
34. method for makings according to claim 18, is characterized in that, the material of described dielectric support film is monox or silicon nitride, or described dielectric support film is the composite dielectric film that monox and silicon nitride are formed.
35. method for makings according to claim 18, it is characterized in that, described thermoelectric pile comprises the first thermocouple bar and the second thermocouple bar with described first thermocouple bar corresponding matching, and described first thermocouple bar and the second thermocouple bar part connect, and part passes through insulator separation.
36. method for makings according to claim 35, is characterized in that, the material of described first thermocouple bar and the second thermocouple bar is Al and polysilicon, Ti and polysilicon, Au and polysilicon, or N-type doped polycrystalline silicon and P type doped polycrystalline silicon.
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