CN104518745B9 - Amplifier with a high-frequency amplifier - Google Patents

Amplifier with a high-frequency amplifier Download PDF

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Publication number
CN104518745B9
CN104518745B9 CN201410498423.0A CN201410498423A CN104518745B9 CN 104518745 B9 CN104518745 B9 CN 104518745B9 CN 201410498423 A CN201410498423 A CN 201410498423A CN 104518745 B9 CN104518745 B9 CN 104518745B9
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China
Prior art keywords
terminal
diode
transistor
amplifier
coil
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CN201410498423.0A
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Chinese (zh)
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CN104518745B (en
CN104518745A (en
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川野阳
川野阳一
山浦新司
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Fujitsu Ltd
Fujitsu Semiconductor Ltd
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Fujitsu Ltd
Fujitsu Semiconductor Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/165—A filter circuit coupled to the input of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/216—A coil being added in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/246—A series resonance being added in shunt in the input circuit, e.g. base, gate, of an amplifier stage, e.g. as a trap
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3215—To increase the output power or efficiency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45541—Indexing scheme relating to differential amplifiers the IC comprising dynamic biasing means, i.e. controlled by the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45552—Indexing scheme relating to differential amplifiers the IC comprising clamping means, e.g. diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45554—Indexing scheme relating to differential amplifiers the IC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45568—Indexing scheme relating to differential amplifiers the IC comprising one or more diodes as shunt to the input leads
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45576—Indexing scheme relating to differential amplifiers the IC comprising input impedance adapting or controlling means

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

An amplifier comprising: two input terminals that receive a differential, dual tone transmission signal; two output terminals; a coil having terminals respectively connected to the input terminals and having a center tap; a first transistor having a gate connected to one terminal of the coil, and an output terminal of the first transistor being connected to the one output terminal; a second transistor having a gate connected to the other terminal of the coil, and an output terminal of the second transistor being connected to the other output terminal; a diode having a terminal connected to the center tap; and a bias circuit connected to the other terminal of the diode to output a gate voltage to turn on the first transistor and the second transistor. The diode adjusts the terminal voltage according to the signal level of the second harmonic of the transmission signal supplied from the center tap to the terminal of the diode.

Description

Amplifier
Technical field
Present disclosure relates generally to amplifier.
Background technology
Generally, it is known that, Distoriton compensating circuit includes：Distortion control unit, distortion control are single Member can independently control number (order) from the secondary non-linear mistake secondary until 2N (N >=2) True component, wherein, the nonlinear distortion component configuration input fundamental frequency component of wireless signal and secondary (double) power of at least one even-times in harmonics frequency component；And AM unit, its Amplitude modulation(PAM) is carried out (see, e.g., special using the output signal and wireless signal of distortion control unit Sharp document 1).
[relevant technical literature]
[patent document]
[patent document 1] Japanese Laid-Open Patent Publication the H11-289227th
Incidentally, conventional Distoriton compensating circuit has the problem of circuit configuration is complicated, because it is wrapped Distortion control unit and Distoriton compensating circuit as described above are included to reduce distortion.
Therefore, the purpose of at least one embodiment of the invention be to provide it is with easy configuration and The amplifier operated in the less region of distortion.
The content of the invention
According at least one embodiment of the present invention, a kind of amplifier includes：A pair of input terminals, The a pair of input terminals is configured to transmission signal conduct input that receive difference and twotone；One To lead-out terminal；Coil, the coil are configured to two be connected respectively with a pair of input terminals Terminal, and the coil is configured to centre cap；The first transistor, the first transistor quilt It is configured to the grid being connected with a terminal in the terminal of coil, and the first transistor is defeated Go out terminal to be connected with a lead-out terminal in a pair of output；Second transistor, second crystal Pipe is configured to the grid being connected with the another terminal in the terminal of coil, and second transistor Lead-out terminal be connected with another lead-out terminal in a pair of output；Diode, the diode quilt It is configured to the terminal being connected with the centre cap of coil；And bias circuit, the bias circuit quilt It is configured to be connected with the another terminal of diode, and the bias circuit is configured to export pre-defined gate Voltage is to connect the first transistor and second transistor.Diode is according to the centre cap supply from coil Signal level to the second harmonic of the transmission signal of the terminal of diode adjusts the terminal of diode The voltage at place.
Amplifier that is with easy configuration and being operated in the less region of distortion can be provided.
Brief description of the drawings
Fig. 1 is the schematic diagram for showing the amplifier 10 according to routine techniques；
Fig. 2 is output Pout, efficiency eta and the IM3 for showing the amplifier 10 according to routine techniques The schematic diagram of relation between the intensity of signal；
Fig. 3 is included according to the positive of the intelligent phone terminal 500 of the amplifier of first embodiment Perspective view；
Fig. 4 is to show the transmission circuit 200 for including the amplifier 100 according to first embodiment Schematic diagram；
Fig. 5 is shown by switching the transistor in the amplifier 100 according to first embodiment Grid voltage selects schematic diagram of the intensity of IM3 signals for the situation in low region；
Fig. 6 A to Fig. 6 B are shown for detecting in the amplifier 100 according to first embodiment IM3 signals intensity method schematic diagram；
Fig. 7 A to Fig. 7 B are shown for detecting in the amplifier 100 according to first embodiment IM3 signals intensity method schematic diagram；
Fig. 8 is the schematic diagram for showing the amplifier 100 according to first embodiment；
Fig. 9 A to Fig. 9 D are shown by diode 132 to generate adjustment voltage δ Vg situation Schematic diagram；
Figure 10 is shown by switching the transistor in the amplifier 100 according to first embodiment 120A and 120B grid voltage selects schematic diagram of the intensity of IM3 signals for low region；
Figure 11 A to Figure 11 D are shown by diode 132A to generate adjustment voltage δ Vg feelings The schematic diagram of shape；
Figure 12 is the schematic diagram for showing the amplifier 600 according to second embodiment；And
Figure 13 A to Figure 13 B are to show to be led to according to the second harmonic of the amplifier 600 of second embodiment The schematic diagram of wave filter 660.
Embodiment
Before the amplifier of description according to the embodiment of the present invention, it will be retouched using Fig. 1 to Fig. 2 State the amplifier according to routine techniques.
Fig. 1 is the schematic diagram for showing the amplifier 10 according to routine techniques.Amplifier 10 includes defeated Enter terminal 11, input matching circuit 12, branch (stub) circuit 13, transistor 14, branch's electricity Road 15, output matching circuit 16 and lead-out terminal 17.
For example, amplifier 10 is used as the work(of the transmission unit of intelligent phone terminal or mobile telephone terminal Rate amplifier.Base band signal process of the input terminal 11 from intelligent phone terminal or mobile telephone terminal Unit etc. receives transmission signal as input.Transmission signal is the signal of so-called " twotone form ". Amplifier 10 is amplified to the transmission signal for being input into input terminal 11, with from lead-out terminal 17 output amplified signals.
Input matching circuit 12 is to carry out impedance matching for the circuit with being connected to input terminal 11 Circuit.Input matching circuit 12, which is arranged in use in, is connected transmission signal from input terminal 11 Circuit reduce loss by reflecting when being input to input terminal 11.Branch circuit 13 and transistor 14 grid is connected with the output of input matching circuit 12.
Branch circuit 13 is the circuit of so-called " short branched form ", and including inductor 13A and Capacitor 13B.Inductor 13A terminal and the lead-out terminal and transistor of input matching circuit 12 14 grid connection, and the terminal and power supply of inductor 13A another terminal and capacitor 13B Vg connections.Capacitor 13B another terminal ground connection.
Power supply Vg is the dc source for having output voltage Vg.Output voltage Vg is fed to crystalline substance The grid of body pipe 14 is as grid voltage.Branch circuit 13 is defeated by power supply Vg output voltage Vg Enter the grid to transistor 14.
For example, transistor 14 is NMOS (N-channel metal-oxide semiconductor (MOS)) transistor, grid Pole is connected with the inductor 13A of input matching circuit 12 and branch circuit 13, source ground, and And drain electrode is connected with branch circuit 15.Transistor 14, which amplifies, is input into the voltage of grid with from drain electrode Export amplified voltage.
Branch circuit 15 is the circuit of so-called " short branched form ", and including inductor 15A and Capacitor 15B.Inductor 15A terminal and the lead-out terminal and transistor of input matching circuit 12 14 drain electrode connection, and the terminal and power supply of inductor 15A another terminal and capacitor 15B Vg connections.Capacitor 15B another terminal ground connection.
Power supply Vd is the dc source for having output voltage Vd.Output voltage Vd is fed to crystalline substance The drain electrode of body pipe 14.Power supply Vd output voltage Vd is input to transistor 14 by branch circuit 15 Drain electrode.
Output matching circuit 16 is to carry out impedance matching for the circuit with being connected to lead-out terminal 17 Circuit.The drain electrode of the input terminal of output matching circuit 16 and branch circuit 15 and transistor 14 connects Connect.Output matching circuit 16 is arranged in use in transmission signal being output to be connected with lead-out terminal 17 During the circuit connect loss is reduced by reflecting.
As described above, for example, amplifier 10 is used as the biography of intelligent phone terminal or mobile telephone terminal The power amplifier of defeated unit.
Generally, make in the front end of portable terminal (such as intelligent phone terminal or mobile telephone terminal) With high-efficiency amplifier, so that the life-span of battery is longer.Represent to put by η=(Pout-Pin)/Pdc The efficiency eta of big device, wherein Pin are enter into the power of amplifier, and Pout is exported from amplifier Power (output of amplifier), and Pdc are the dc powers of amplifier consumption.
In this case, by close to using amplifier 10 in the state of saturation power region So that Pout is bigger, so that the molecule in above-mentioned formula is bigger, to realize higher efficiency.
However, the linear relationship of amplifier declines near saturation power, and accordingly, it is possible to generate Signal outside frequency band, or signal in frequency band may be mixed to produce distorted signal, and this may The situation for causing the transmission quality of signal to decline.
Therefore, the distorted signal of amplifier is reduced to realize amplifier of the high efficiency for portable terminal For be necessary.If transmission signal is the signal of so-called " twotone form ", generation is claimed For the distorted signal of " the 3rd intermodulation distortion signals " (hereinafter referred to as " IM3 signals ").
Then, by using Fig. 2 come the amplifier 10 according to routine techniques that describes to show in Fig. 1 Export the relation between the intensity of Pout, efficiency eta and IM3 signals.
Fig. 2 is output Pout, efficiency eta and the IM3 for showing the amplifier 10 according to routine techniques The figure of relation between the intensity of signal.In fig. 2, transverse axis represents the output of amplifier 10, left The longitudinal axis of side represents the efficiency eta of amplifier 10, and the IM3 of the longitudinal axis expression amplifier 10 on right side The intensity of signal.Also, dashed dotted-line represents efficiency eta, dotted line and solid line represent IM3 signals Intensity.
Here, the efficiency eta of amplifier 10, wherein Pin are represented by η=(Pout-Pin)/Pdc The power of amplifier 10 is enter into, Pout is the power (amplifier 10 exported from amplifier 10 Output), and Pdc be amplifier 10 consume dc power.
By the efficiency eta that dashed dotted-line represents as output Pout increases are and dullness increase, and Saturation power nearby reaches peak value.Therefore, it is desirable to use amplifier in height output region as much as possible 10。
However, as shown in phantom in Figure 2, the intensity of IM3 signals increases with output Pout increases Greatly, and near saturation power amplifier 10 can not be used.
Because the intensity of the IM3 signals generally allowed by law come regulation amplifier 10 Higher limit.For example, the frequency in Japan between the 800MHz and 2GHz for portable terminal In band, it is necessary to make the intensity of IM3 signals relative to the transmission signal (fundamental signal) in frequency band Signal intensity is less than or equal to -34dBc.That is, the permission of the intensity in Japanese IM3 signals The upper limit is -34dBc.
Incidentally, the intensity of IM3 signals is according to the grid being applied on the transistor 14 of amplifier 10 Pole tension Vg and change.Fig. 2 is worked as by representing that the solid line of the feature of IM3 signal intensity is shown Example when grid voltage Vg reduces.
When grid voltage Vg reduces, the intensity of IM3 signals takes low value or centre in output Pout Increase in the region of value.On the other hand, in output Pout is high region, distortion reduces, and And minimum value be present.
In the embodiment of invention described below, by using IM3 signals to grid voltage Vg dependence, there is provided the amplifier operated near saturation power, wherein when have selected IM3 During the operational scenario that the intensity of signal reduces, the efficiency of amplifier is height.
Below, amplifier will be described according to the embodiment of the present invention.
<First embodiment>
Fig. 3 is included according to the positive of the intelligent phone terminal 500 of the amplifier of first embodiment Perspective view.
The intelligent phone terminal 500 of amplifier including first embodiment is positive with being arranged in Touch-screen 501, and the home button 502 being arranged in below touch-screen 501 and switch 503.
Fig. 4 is to show the transmission circuit 200 for including the amplifier 100 according to first embodiment Schematic diagram.Transmission circuit 200 includes baseband signal control circuit 210, RF (radio frequency) signal control Circuit 220, bias control circuit 230 and amplifier 100 processed.In the outlet side of amplifier 100, Filterplexer 300 is connected with antenna 310.
Experience is applied to the transmission signal of the Base-Band Processing at baseband signal control circuit 210, and experience is applied The modulation treatment at RF signal control circuits 220 is added in be input into amplifier 100.Also, Control signal is input to bias control circuit 230 from RF signal control circuits 220, and biased Control circuit 230 controls the output of amplifier 100.It is input to partially from RF signal control circuits 220 The control signal of pressure control circuit 230 is to represent modulate by RF signal control circuits 220 Processing is applied to transmission signal and when modulation treatment is applied to by RF signal control circuits 220 The signal of bias control circuit 230 is input into during transmission signal.
Will be from amplifier 100 via the filterplexer 300 switched between transmission and reception The transmission signal of output is transferred to antenna 310, and radiates the transmission signal from antenna 310.
Amplifier 100 in first embodiment is used as so-called included in transmission circuit 200 " power amplifier ".
Fig. 5 is shown by switching the transistor in the amplifier 100 according to first embodiment Grid voltage selects schematic diagram of the intensity of IM3 signals for the situation in low region.In Figure 5, Transverse axis represents the output of amplifier 100, and the longitudinal axis in left side represents the efficiency eta of amplifier 100, and The longitudinal axis on right side represents the intensity of the IM3 signals of amplifier 100.Also, dashed dotted-line represents effect Rate η, four dotted lines represent the intensity of IM3 signals.Pay attention to, Fig. 5 is measured by spectrum analyzer In the intensity of IM3 signals that shows.
In addition, the Pout-min on transverse axis represents the minimum output valve of amplifier 100, also, Pout-max represents the maximum output value of amplifier 100.IM3UL on the longitudinal axis on right side is represented The permission upper limit of the intensity of IM3 signals.
Four dotted lines represent the amplifier 100 with being obtained by the grid voltage Vg1 to Vg4 of four types The relevant IM3 signals of output strength characteristic IM3 (Vg1) to IM3 (Vg4).Grid electricity Pressing Vg1 to grid voltage Vg4 relation is：Magnitude of voltage is decreased to Vg4 from Vg1.That is, Meet Vg1>Vg2>Vg3>Vg4(>Vth relation).Here, Vth is included in amplifier 100 In transistor threshold value.
It is low region (minimum output valve Pout-min and maximum output in the output of amplifier 100 Region between value Pout-max intermediate point) in feature IM3 (Vg1) to feature IM3 (Vg4) In, IM3 (Vg1) intensity is minimum, and IM3 (Vg4) intensity is highest.That is, In the output of amplifier 100 is low region, the intensity of IM3 signals according to IM3 (Vg1), IM3 (Vg2), IM3 (Vg3) and IM3 (Vg4) order raise successively.
In addition, in this region, IM3 (Vg1) and IM3 (Vg2) are less than the upper limit IM3UL allowed, And IM3 (Vg3) and IM3 (Vg4) is higher than the upper limit IM3UL allowed.
On the other hand, it is IM3 (Vg1), IM3 in high region in the output of amplifier 100 (Vg2), each intensity in IM3 (Vg3) and IM3 (Vg4) uses minimum value, and And produce minimum value output area according to IM3 (Vg1), IM3 (Vg2), IM3 (Vg3) with And IM3 (Vg4) order is offset towards height output side (right side in Fig. 5).
In addition, in IM3 (Vg1), IM3 (Vg2), IM3 (Vg3) and IM3 (Vg4) In each minimum value near signal intensity less than allow upper limit IM3UL.
Therefore, when the output of amplifier 100 increases to maximum output from minimum output valve Pout-min During value Pout-max, if grid voltage such as along transverse axis arrow it is signified be constantly reduced to Vg1, Vg2, Vg3 and Vg4, then as indicated by heavy line, in almost whole output area In the intensity of IM3 signals can be set smaller than or the upper limit IM3UL equal to permission.
Amplifier 100 in first embodiment reduces the intensity of IM3 signals by the principle.
Therefore, it is necessary to following mechanism：By the mechanism, under easy configuration, amplifier can be adjusted The grid voltage of transistor in 100 so that the intensity of IM3 signals is in almost whole output area Less than or equal to the upper limit IM3UL of permission.
Then, the method for the intensity for detecting IM3 signals being described using Fig. 6 A to Fig. 7 B.
Fig. 6 A to Fig. 7 B are shown for detection according to the strong of the IM3 signals of first embodiment The figure of the method for degree.Pay attention to, shown in Fig. 6 A for the embodiment party of amplifier 1 and first that compares The difference of amplifier 100 in formula is：Constant grid voltage is applied to it by amplifier 1 Internal transistor.
As shown in Figure 6A, when by the letter with angular frequency 1 and the twotone form of angular frequency 2 When number being input to amplifier 1, amplifier 1 exports fundamental signal (ω 1, ω 2) as shown in Figure 6B As data, and in addition, output IM3 signals, second harmonic signal and (triple) is humorous three times Ripple signal.Second harmonic signal and harmonic signal are that the high order of fundamental signal (ω 1, ω 2) is humorous Ripple.
Lead in n (wherein n the is greater than 1 integer) multinomial represented by formula (1) Item is crossed to represent IM3 signals, second harmonic signal and harmonic signal.Pay attention to, due to being difficult to Whole items in polynomial of degree n are shown, so only showing a part of item in formula (1).
{Sin(ω1t)+Sin(ω2t)}n=A(Sin(ω1t)+Sin(ω2t))+B(Sin(2ω1t-ω2t)+Sin(ω1t-2ω2t)) +C(Sin(2ω1t)+Sin(2ω2t))+··· (1)
As shown in Figure 6B, because the frequency of IM3 signals is close to fundamental signal (ω 1, ω 2) Frequency, so being difficult to the intensity of directly detection IM3 signals.
Fig. 7 A show the IM3 signal relevant with the input power of amplifier 1 (referring to Fig. 6 A) Strength characteristic example.The intensity of the IM3 signals shown in Fig. 7 A is included in from amplifier 1 The intensity of IM3 signals in the signal that the input terminal of (referring to Fig. 6 A) leaks out.
As shown in Figure 7 A, the IM3 leaked out from the input terminal of amplifier 1 (referring to Fig. 6 A) Signal has following characteristics：I.e. when input power is from minimum value Pin-min towards maximum Pin-max During increase, intensity increase, then intensity decline, reaches minimum value at Pin1, and afterwards again Secondary increase.
In addition, Fig. 7 B respectively illustrate it is relevant with the input power of amplifier 1 (referring to Fig. 6 A) The example of intensity (amplitude) feature of fundamental wave, second harmonic and triple-frequency harmonics.Here, fundamental wave, The intensity of second harmonic and triple-frequency harmonics is included in the input from amplifier 1 (referring to Fig. 6 A) The intensity of fundamental wave, second harmonic and triple-frequency harmonics in the signal that terminal leaks out.
As shown in Figure 7 B, when input power increases to maximum Pin-max from minimum value Pin-min When, the fundamental wave included in the signal leaked out from the input terminal of amplifier 1 (referring to Fig. 6 A) Substantially increase with triple-frequency harmonics, but when more than Pin1, fundamental wave and triple-frequency harmonics decline.
On the other hand, the second harmonic leaked out from the input terminal of amplifier 1 (referring to Fig. 6 A) Maximum Pin-max is increased to from minimum value Pin-min, and when more than Pin1, it is secondary humorous Ripple increases faster.
Pay attention to, it is accordingly required in particular to which the region for reducing the intensity of IM3 signals is amplifier 1 (referring to Fig. 6) Height output region.Because as using Fig. 2 described by routine techniques, improving In the case of the efficiency in height output region, the intensity increase of IM3 signals in height output region.
The second harmonic shown in the IM3 signals and Fig. 7 B that are shown in Fig. 7 A is in height output region (the higher of Pin1 shows side) has correlation, and is intended to dull increase.Therefore, can be with The intensity of the second harmonic signal leaked out based on the input terminal from amplifier 1 (referring to Fig. 6 A) (amplitude) estimates the intensity of IM3 signals (amplitude).
Therefore, the amplifier 100 (referring to Fig. 4) in first embodiment especially by Fig. 7 A extremely Carried out in the compensatory zone 70A or compensatory zone 70B on height output side that dotted line in Fig. 7 B is indicated It drives operation.However, the operating area of the amplifier 100 in first embodiment is not limited to compensate Region 70A or 70B, as long as the intensity of IM3 signals is sufficiently low, operating area can be have than Lower output area is exported in compensatory zone.
That is, the amplifier 100 in first embodiment is at least passing through Fig. 7 A to Fig. 7 B In the relatively height output side indicated of dotted line on compensatory zone 70A or 70B in carry out its driving operation.
Then, will be configured using Fig. 8 to describe the circuit of the amplifier 100 in first embodiment.
Fig. 8 is the schematic diagram for showing the amplifier 100 according to first embodiment.Amplifier 100 Amplify differential transmission signals with output difference output signal.
Amplifier 100 include input terminal 101A and 101B, lead-out terminal 102A and 102B, Input matching circuit 110A and 110B, transistor 120A and 120B, grid voltage control unit 130th, grid voltage generation unit 140 and output matching circuit 150A and 150B.
In the first embodiment, for example, amplifier 100 is used as being included in intelligent phone terminal Power amplifier in 500 (referring to Fig. 3) transmission circuit 200 (referring to Fig. 4).
The RF signal control circuits 220 that input terminal 101A and 101B are shown from Fig. 4 receive Transmission signal is as input.Transmission signal is the differential signal of so-called " twotone form ".Amplifier 100 amplifications are input into input terminal 101A and 101B transmission signal with from lead-out terminal 102A Amplified signal is exported with 102B.
Input matching circuit 110A and 110B be used for be connected to input matching circuit 110A and 110B circuit carries out the circuit of impedance matching.Input matching circuit 110A and 110B are arranged to For transmission signal is input to from the circuit being connected with input matching circuit 110A and 110B it is defeated When entering match circuit 110A and 110B loss is reduced by reflecting.Input matching circuit 110A and 110B outlet side and transistor 120A and 120B grid and grid voltage control unit 130 Connection.
For example, transistor 120A and 120B are NMOS (N-channel metal-oxide semiconductor (MOS)s) Transistor, grid and input matching circuit 110A and 110B and grid voltage control unit 130 Connection, source ground, and drain and be connected with output matching circuit 150A and 150B.Transistor 120A and 120B amplifications are input into the voltage of grid to export the voltage from drain electrode.
Grid voltage control unit 130 be arranged to be used for from grid voltage generation unit 140 via The grid voltage that grid voltage control unit 130 is applied to transistor 120A and 120B grid enters Row control.
Here, Vg represents to be applied to the grid voltage of transistor 120A and 120B grid, δ Vg It is the adjustment amount from the voltage of two terminals output of the inductor 131 of grid voltage control unit 130 (adjustment voltage), and Vg0 are that two are exported and be input into from grid voltage generation unit 140 The initial value of the grid voltage of tie point between pole pipe 132 and capacitor 133.Pass through following public affairs Formula (2) represents to be applied to the grid voltage Vg of transistor 120A and 120B grid.
Vg=Vg0+ δ Vg (2)
Grid voltage control unit 130 includes inductor 131, diode 132 and capacitor 133. Inductor 131 is the coil for having centre cap 131A.Two terminals of inductor 131 respectively with Input matching circuit 110A and 110B, and transistor 120A connect with 120B grid.And And centre cap 131A is connected with the anode of diode 132.
The centre cap 131A of inductor 131 is located at the centre between two terminals of inductor 131 Point.Also, there is inductor 131 inductance L, inductance L to be configured to form with capacitor 133 LC resonance circuits.The resonant frequency of LC resonance circuits is set as to the frequency (2f) of second harmonic. The frequency (2f) of second harmonic be the frequency (f) of fundamental wave twice.
This is for the value by selecting the inductance L of inductor 131 and the electric capacity C of capacitor 133 So that impedance is zero (short circuit) relative to second harmonic, to make two from centre cap 131A outputs The signal of subharmonic is fully applied to two terminals of diode 132.Pay attention to, the electricity of inductor 131 The value for feeling the electric capacity C of L and capacitor 133 meets
Therefore, the second harmonic of the fundamental wave of transmission signal is output to diode from centre cap 131A 132, without exporting odd number component of degree n n, such as fundamental wave and triple-frequency harmonics from centre cap 131A, Because odd number component of degree n n is actually earth point.
Pay attention to, this naturally means, if IM3 signals leak out transistor 120A's and 120B Grid, then IM3 signals are not exported from centre cap 131A.As for even number component of degree n n, such as four Subharmonic or higher order harmonics, it is not detected at centre cap 131A, because for these For component, centre cap 131A impedance is not zero (without short circuit).
Therefore, second harmonic is only output to diode from the centre cap 131A of inductor 131 132。
Diode 132 has the anode being connected with the centre cap 131A of inductor 131, and two A terminal and grid voltage generation unit 140 in the negative electrode of pole pipe and the terminal of capacitor 133 Lead-out terminal 140A connections.
Diode 132 is arranged to be used for according to the centre cap 131A outputs from inductor 131 The intensity (amplitude) of second harmonic carrys out controlling transistor 120A and 120B grid voltage.Below The operation of diode 132 will be described.
The negative electrode and grid voltage of a terminal and diode 132 in the terminal of capacitor 133 generate The lead-out terminal 140A connections of unit 140, and the another terminal ground connection of capacitor 133.As above It is described, the electric capacity C of capacitor 133 is set to and comes together to configure LC resonance electricity with inductor 131 The value on road.
Pay attention to, when with the intensity (width for the transmission signal for being input to input terminal 101A and 101B Degree) increase and the outlet side of diode 132 electricity is changed by the amplitude limiter circuit including diode 132 During pressure, the grid that transistor 120A and 120B is output to by grid voltage control unit 130 is generated Adjustment voltage δ Vg.Amplitude limiter circuit includes diode 132 and grid voltage generation unit 140.
In amplifier 100 in the first embodiment, when being input to input terminal 101A and 101B Transmission signal intensity (amplitude) increase when, crystal is output to by grid voltage control unit 130 The adjustment voltage δ Vg of pipe 120A and 120B grid reduce.
Setting adjustment voltage δ Vg to adjust when the intensity (amplitude) of transmission signal is initial value Voltage δ Vg are zero (0), and when intensity (amplitude) increase from initial value of transmission signal, The adjustment voltage of transistor 120A and 120B grid is output to by grid voltage control unit 130 δ Vg take negative value.
Grid voltage generation unit 140 includes constant current source 141 and diode 142.Constant current The lead-out terminal in source 141 is connected with the anode of diode 142, and the minus earth of diode 142. The lead-out terminal 140A of grid voltage generation unit 140 be constant current source 141 lead-out terminal with Tie point between the anode of diode 142.
Grid voltage generation unit 140 is from lead-out terminal 140A output transistors 120A and 120B Grid voltage initial value Vg0.It is described later initial value Vg0 value.
Output matching circuit 150A and 150B are used for being connected to lead-out terminal 102A and 102B Filterplexer 300 carry out impedance matching circuit.Output matching circuit 150A's and 150B Input terminal is connected with transistor 120A and 120B drain electrode.Output matching circuit 150A and 150B It is arranged in use in the filtering that transmission signal is output to and is connected with lead-out terminal 102A and 102B During duplexer 300 loss is reduced by reflecting.
In the amplifier 100 being configured as above, when being input into input terminal 101A and 101B When the intensity of transmission signal changes, the adjustment voltage δ Vg that are exported by grid voltage control unit 130 Change to realize operations described below.In addition to Fig. 8, Fig. 9 A to Fig. 9 D are also used for following description.
Fig. 9 A to Fig. 9 D are shown by diode 132 to generate adjustment voltage δ Vg state Figure.Fig. 9 A are the simplification configuration diagrams of amplifier 100.Fig. 9 B to Fig. 9 C are Fig. 9 A equivalent electrics Lu Tu, and Fig. 9 D show the waveform in the outlet side of diode 132.
In figure 9 a, input matching circuit 110A and 110B and the signal source of output transmission signal 50 connections.In addition, indicate inductor 131 by the symbol of coil, and by transistor 120A Capacitor Cgs is marked as with 120B.Amplifier 100 includes diode 132 and has grid voltage The amplitude limiter circuit of generation unit 140.
When grid voltage Vg is less than initial value Vg0 (Vg ＜ Vg0), diode 132 disconnects, And the equivalent circuit of amplifier 100 is Fig. 9 B in this case.Because it is applied to two poles The reverse biased of pipe 132 causes the lead-out terminal side of diode 132 rather than input terminal side to break Open.
On the other hand, when grid voltage Vg is more than initial value Vg0 (Vg>When Vg0), diode 132 connect, and the equivalent circuit of amplifier 100 is Fig. 9 C in this case.That is, When diode 132 is connected, diode 132 can be considered as the transistor with residual resisitance.
In the amplifier 100 shown in Fig. 8, input matching circuit 110A and 110B will be passed through Transmission signal is input to inductor 131 to generate the resonance of second harmonic component.Now, by from electricity The second harmonic of the transmission wave of the centre cap 131A outputs of sensor 131 connects diode 132. Also, transistor 120A and 120B amplify transmission wave.
Also, this moment, as indicated by the dotted line in Fig. 9 D, it is input to diode 132 Second harmonic there is sinusoidal waveform.As indicated by the solid line in Fig. 9 D, including two poles The amplitude limiter circuit of pipe 132 carries out amplitude limit to second harmonic, and two are being input into so as to which second harmonic has Make voltage in the positive electricity laminate section of the second harmonic of pole pipe 132 higher than the connection voltage of diode 132 The waveform that part is limited.Therefore, in the outlet side of diode 132, given birth to compared to by grid voltage The initial value Vg0 exported into unit 140, the DC component (DC level) of second harmonic reduce Adjust voltage δ Vg.
Also, this moment, it is to turn on due to diode 132, if reducing the defeated of diode 132 Go out the DC level of voltage, then also reduce the voltage of the input side of diode 132.This causes two poles The DC level of the input side of pipe 132 reduces δ Vg.Pay attention to, although can strictly consider by two poles Voltage caused by pipe 132 declines, but ignores voltage decline here.
Then, with the intensity (width for the transmission signal for being input into input terminal 101A and 101B Degree) the gradual increase from initial value, the voltage on the input side of diode 132 is gradually reduced.This is Because with the transmission signal for being input into input terminal 101A and 101B intensity (amplitude) from Initial value plays gradually increase, and adjustment voltage δ Vg reduce to obtain negative value.
Therefore, in the amplifier 100 of first embodiment, when being input into input terminal 101A With the intensity (amplitude) of 101B transmission signal from initial value during increase, diode 132 it is defeated The voltage entered on side reduces, and adjusts voltage δ Vg and obtain negative value.
It is small that this make it that the grid voltage Vg for being input into transistor 120A and 120B grid is decreased to In the initial value Vg0 such as represented by formula (2).
Pay attention to, when intensity (amplitude) increase from initial value of transmission signal, by adjusting voltage δ Vg reduce grid voltage Vg.Therefore, it is less than or equal to IM3 letters if set to obtain Number intensity permission upper limit IM3UL value, then, can be in IM3 in driving amplifier 100 Driving amplifier 100 under the relatively low operational scenario of the intensity of signal.
That is, the grid voltage Vg reduced using the reduction with adjustment voltage δ Vg, and And by driving transistor 120A and 120B at the operating point near the minimum value of IM3 signals, It can be driven in the case where the intensity of IM3 signals is less than or equal to the upper limit IM3UL allowed operational scenario Amplifier 100.
The reduction for adjusting voltage δ Vg causes transistor 120A and 120B grid voltage to reduce, this Corresponding to the skew (to height output side) to the right of the minimum value of the IM3 signals in Fig. 9.
The efficiency eta of amplifier 100 is dull with output Pout increase to be increased, and in saturation Power nearby obtains peak value.Therefore, it is desirable to amplifier 10 is used as much as possible in height output region.
However, the amplifier 10 in routine techniques is difficult to operate in height output region (referring to Fig. 1), Because the intensity of IM3 signals increases with output Pout increase.
By contrast, in amplifier 100 in the first embodiment, by detecting transmission signal Second harmonic and transistor 120A and 120B grid are adjusted based on the second harmonic of transmission signal Pole tension, can be driving amplifier 100 in low operating area in the intensity of IM3 signals.
When the driving amplifier 100 in height output region, by adjusting transistor 120A and 120B Grid voltage come IM3 signals intensity be low operating area in driving amplifier 100 it is this Method is particularly effective.
Here, the amplifier 100 of first embodiment will be described in further detail using Figure 10 Effect.
Figure 10 is shown by switching the transistor in the amplifier 100 according to first embodiment 120A and 120B grid voltage selects schematic diagram of the intensity of IM3 signals for low region. In Fig. 10, transverse axis represents the output (power output) of amplifier 100, and the vertical pivot in left side represents to put The intensity of the IM3 signals of big device 100, and the efficiency eta of the vertical pivot expression amplifier 100 on right side. Also, dotted line represents efficiency eta, there is the intensity of eight lines expression IM3 signals of sharp sweep. IM3UL (- 34dBc) on the longitudinal axis of left side represents the upper limit of the permission of the intensity of IM3 signals.
Eight line is represented with being what grid voltage Vg1 to Vg8 was obtained by the grid voltage of eight types The strength characteristic IM3 for exporting relevant IM3 signals of amplifier 100.Grid voltage Vg1 to Vg8 Relation be：Magnitude of voltage reduces from Vg1 to Vg8.That is, meet Vg1>Vg2>Vg3>Vg4>Vg5>Vg6>Vg7>Vg8(>Vth relation).Here, Vth is Transistor 120A and 120B threshold value.
Therefore, if making the output δ Vg of diode 132 there is positive feature to be shown to realize in Fig. 9 Feature Vg1 to Vg8, then the amplifier 100 of first embodiment can obtain IM3 signals such as Feature to reduce as shown in Figure 9.
Therefore, according to first embodiment, it can provide with easy configuration and be small in distortion Region in the amplifier 100 that operates.
Pay attention to, in superincumbent description assume transistor 120A and 120B there are following characteristics, i.e., with Grid voltage to be gradually reduced, the minimum value of IM3 signals is offset towards height output side.However, depend on In the type for the transistor for being used as transistor 120A and 120B, transistor may have with it is above-mentioned Opposite feature.That is, there may be following situations, i.e., as grid voltage gradually increases, The minimum value of IM3 signals is offset towards height output side.
In this case, diode 132 can be connected with the direction in opposite direction in Fig. 8, To select the operational scenario that the intensity of IM3 signals reduces.It will be described in this case using Figure 11 Operation.
Figure 11 A to Figure 11 D are shown by diode 132A to generate adjustment voltage δ Vg situation Figure.The difference of the amplifier 100 shown in amplifier 100A and Fig. 9 in Figure 11 exists In：Including the grid voltage control unit shown in grid voltage control unit 130A rather than Fig. 9 130, and the crystal of the amplifier 100 shown in transistor 120A and 120B feature and Fig. 9 Pipe is different.
The transistor 120A and 120B shown in Figure 11 has following characteristics, i.e., with grid voltage Gradually increase, the minimum value of IM3 signals are offset towards height output side.That is, for transistor For 120A and 120B, when grid voltage changes, the minimum values of IM3 signals with Fig. 9 Change on the direction in opposite direction shown.
Figure 11 A are the configuration diagrams of amplifier 100A simplification.Figure 11 B to Figure 11 C are Figure 11 A Equivalent circuit diagram, and Figure 11 D show the waveform in diode 132A outlet side.
The difference of the amplifier 100 shown in the amplifier 100A shown in Figure 11 A and Fig. 9 A It is：Diode 132A closure is opposite.
When grid voltage Vg is more than initial value Vg0 (Vg>When Vg0), diode 132A disconnects, And amplifier 100A equivalent circuit is Figure 11 B in this case.Because it is applied to two Pole pipe 132A reverse biased causes diode 132A input terminal side rather than lead-out terminal side to go out Now disconnect.
On the other hand, when grid voltage Vg is less than initial value Vg0 (Vg<When Vg0), diode 132A Connect, and amplifier 100A equivalent circuit is Figure 11 C in this case.That is, When diode 132A is connected, diode 132A can be considered as to the transistor with residual resisitance.
, will be defeated by input matching circuit 110A and 110B transmission signal in amplifier 100A Enter to inductor 131 to generate the resonance of second harmonic component.In addition, by grid voltage generation unit 140 connect diode 132A.In addition, transistor 120A and 120B amplify transmission wave.
Also, this moment, as indicated by the dotted line in Figure 11 D, it is input to diode 132A Second harmonic there is sinusoidal waveform.As indicated by the solid line in Figure 11 D, pass through bag The amplitude limiter circuit for including diode 132A carries out amplitude limit to second harmonic, so as to which second harmonic has in quilt The voltage for being input to diode 132A second harmonic is the waveform being limited at negative part.Pay attention to, In Figure 11 D, relative to diode 132A connection voltage (on-voltage), negative voltage retains Obtain more.Therefore, in diode 132A outlet side, compared to by grid voltage generation unit 140 The initial value Vg0 of output, the DC component (DC level) of second harmonic increase adjustment voltage δVg.Pay attention to, although can strictly consider that the voltage as caused by diode 132A declines, this In ignore the voltage decline.
Then, with the intensity (amplitude) for the transmission signal for being input into input terminal 101A and 101B The gradual increase from initial value, the voltage on diode 132A input side gradually increase.This be because For as the intensity (amplitude) for the transmission signal for being input into input terminal 101A and 101B is from first Initial value plays gradually increase, then the DC level of the voltage on diode 132A input side gradually increases.
Therefore, in the amplifier 100A of first embodiment, when being input into input terminal 101A With the intensity (amplitude) of 101B transmission signal from initial value during increase, diode 132A's The DC level increase of the voltage of input side.
This grid voltage Vg for be input into transistor 120A and 120B grid raises greatly In initial value Vg0.
Pay attention to, when intensity (amplitude) increase from initial value of transmission signal, grid voltage Vg Increase adjustment voltage δ Vg.Therefore, it is less than or equal to IM3 signals if set to obtain Intensity permission upper limit IM3UL value, then, can be in IM3 in driving amplifier 100A The intensity of signal is driving amplifier 100A under low operational scenario.
That is, the grid voltage Vg increased using the increase with adjustment voltage δ Vg, and And by driving transistor 120A and 120B in the operating point near the minimum value of IM3 signals, It can be driven in the case where the intensity of IM3 signals is less than or equal to the upper limit IM3UL allowed operational scenario Amplifier 100A.
As described above, if the minimum value of IM3 signals is with the increase of grid voltage and defeated towards height Go out side skew, then diode 132A can have and signal source 50 and transistor 120A and 120B Grid connection negative electrode and the anode that is connected with grid voltage generation unit 140 and capacitor 133.
<Second embodiment>
Figure 12 is the figure for showing the amplifier 600 according to second embodiment.Second embodiment In amplifier 600 and first embodiment in amplifier 100 (referring to Fig. 8) difference It is：Amplifier 600 amplifies single-ended transmission signal.With including amplifier in the first embodiment Element identical element in 100 is assigned to identical reference, but eliminates letter suffix A or B, and the description to these elements is not repeated.
Amplifier 600 include input terminal 101, lead-out terminal 102, input matching circuit 110, Transistor 120, grid voltage control unit 630, grid voltage generation unit 140 and output matching Circuit 150.
In this second embodiment, for example, amplifier 600 is used as being included in intelligent phone terminal Power amplifier in 500 (referring to Fig. 3) transmission circuit 200 (referring to Fig. 4).
The RF signal control circuits 220 that input terminal 101 is shown from Fig. 4 receive transmission signal and made For input.Transmission signal is the single-ended signal of so-called " twotone form ".Amplifier 600 is to defeated The transmission signal entered to input terminal 101 is amplified, amplified to be exported from lead-out terminal 102 Signal.
The outlet side of input matching circuit 110 passes through filtering with the grid of transistor 120 and second harmonic Device 660 connects.
Second harmonic is arranged on the grid of input matching circuit 110, transistor 120 by wave filter 660 It is secondary between a terminal in the terminal of the inductor 631 of pole and grid voltage control unit 630 Harmonic wave is only by the wave filter of second harmonic by wave filter 660.For example, second harmonic passes through filter Ripple device 660 can be the filtering being transmitted to the second harmonic and adjustment voltage δ Vg of transmission signal Device.
Second harmonic can be with for example circuit configures as shown in fig. 13 that by wave filter 660 Wave filter.
Figure 13 A to Figure 13 B are shown according to the secondary humorous of the amplifier 600 of second embodiment The schematic diagram that ripple passes through wave filter 660.
For example, as shown in FIG. 13A, second harmonic by wave filter 660 include terminal 661 and 662, Inductor 663 and 664 and capacitor 665.
Terminal 661 is connected with the grid of input matching circuit 110 and transistor 120.Terminal 662 with Inductor 631 connects.Inductor 663 and 664 is connected in series between terminal 661 and terminal 662. Point between a terminal and inductor 663 and inductor 664 in the terminal of capacitor 665 connects Connect, and the another terminal ground connection of capacitor 665.
In order that the second harmonic of transmission signal passes through filtering by the second harmonic shown in Figure 13 A Device 660, the inductance of inductor 663 and 664 and the electric capacity of capacitor 665 can be properly selected Value combination.Adjusting voltage δ Vg can be by terminal 661 and terminal 662, because Figure 13 A In the second harmonic that shows there is the company of series connection between terminal 661 and terminal 662 by wave filter 660 Two inductors 663 and 664 connect.
Also, as shown in Figure 13 B, second harmonic can be following with including by wave filter 660 The circuit configuration of element：The capacitor 666 connected between terminal 661 and terminal 662；Inductor 667, the point between a terminal and capacitor 666 and terminal 662 in the terminal of inductor 667 Connect and the another terminal of inductor 667 is grounded；And the resistance being connected in parallel with capacitor 666 Device 668.
In this case, the value of electric capacity and the inductance of inductor 667 by adjusting capacitor 666 Value, can be configured such that only DC component passes through resistor 668.
The second harmonic shown in Figure 13 B by wave filter 660 can transmission wave it is secondary humorous Ripple between terminal 661 and terminal 662 by, and can cause adjust voltage δ Vg pass through.
Grid voltage control unit 630 is arranged to be used for passing through wave filter 660 via second harmonic To control from grid voltage generation unit 140 transistor is applied to via grid voltage control unit 630 The grid voltage of 120 grid.
Grid voltage control unit 630 includes inductor 631, diode 132 and capacitor 133. Inductor 631 is no centre cap 131A coil, inductor 631 with first embodiment Inductor 131 it is different.A terminal (terminal in the left side in figure) in the terminal of inductor 631 It is connected with second harmonic by wave filter 660.Also, the another terminal of inductor 631 is (in figure The terminal on right side) it is connected with the anode of diode 132.
The inductance value L of inductor 631 is set to the configuration LC resonance circuits together with capacitor 133 Value.The resonant frequency of LC resonance circuits is set as to the frequency (2f) of second harmonic.It is secondary humorous The frequency (2f) of ripple be the frequency (f) of fundamental wave twice.
This is for the value by selecting the inductance L of inductor 131 and the electric capacity C of capacitor 133 So that impedance is zero (short circuit) relative to second harmonic, it is secondary humorous to make to export from inductor 631 The signal of ripple is applied to two terminals of diode 132 completely.Pay attention to, the inductance of inductor 131 The electric capacity C of L and capacitor 133 value meets
The second harmonic of transmission signal is only input to by inductance by wave filter 660 via second harmonic Device 631.
A terminal in the anode of diode 132 and the terminal of inductor 631 be (right side in figure Terminal) connection, and a terminal in the terminal of the negative electrode of diode 132 and capacitor 133 with And the lead-out terminal 140A connections of grid voltage generation unit 140.
Diode 132 is arranged to the intensity (amplitude) according to the second harmonic exported from inductor 631 Carry out the grid voltage of controlling transistor 120.Diode 132 is together with grid voltage generation unit 140 1 Get up to configure amplitude limiter circuit.
The negative electrode and grid voltage of a terminal and diode 132 in the terminal of capacitor 133 generate The lead-out terminal 140A connections of unit 140, and the another terminal ground connection of capacitor 133.
Pay attention to, when with the transmission signal for being input to input terminal 101 intensity (amplitude) increase and During by amplitude limiter circuit to change the outlet side voltage of diode 132, generate and list is controlled by grid voltage Member 630 is output to the adjustment voltage δ Vg of the grid of transistor 120.
In the amplifier 600 of second embodiment, when the transmission signal for being input to input terminal 101 Intensity (amplitude) increase when, the grid of transistor 120 are output to by grid voltage control unit 630 The adjustment voltage δ Vg of pole reduce.This and the process in amplifier 100 in the first embodiment It is identical.
In the amplifier 600 being configured as above, when the transmission signal for being input into input terminal 101 Intensity (amplitude) during increase, reduces the input side of diode 132 from initial value, and reduces tune Whole voltage δ Vg are to obtain negative value.
This causes the grid voltage Vg for being input into the grid of transistor 120 reduces must be less than initial value Vg0。
Pay attention to, when intensity (amplitude) increase from initial value of transmission signal, grid voltage Vg Reduce adjustment voltage δ Vg.Therefore, it is less than or equal to IM3 signals if set to obtain Intensity permission upper limit IM3UL value, then, can be in IM3 in driving amplifier 600 The intensity of signal is driving amplifier 600 under low operational scenario.
Therefore, if making the output δ Vg of diode 132 there is positive feature for realizing Fig. 9 In the feature Vg1 to Vg8 that shows, then the amplifier 600 of second embodiment can obtain such as Fig. 9 The feature that shown IM3 signals reduce.
Therefore, according to second embodiment, can provide with easy configuration and less in distortion The amplifier 600 operated in region.

Claims (5)

1. a kind of amplifier, including：
A pair of power input terminals, the pair of power input terminals receive the transmission signal of difference, poor The transmission signal divided is the signal of twotone；
A pair of power output terminals；
Coil, the coil have the first terminal and Second terminal, the first terminal and described second Terminal is connected with the pair of power input terminals respectively, and the coil has centre cap；
The first transistor, the first transistor have first be connected with the first terminal of the coil Grid and it is connected with a power output terminal in the pair of power output terminal first defeated Go out terminal；
Second transistor, the second transistor have second be connected with the Second terminal of the coil Grid and it is connected with another power output terminal in the pair of power output terminal second defeated Go out terminal；
Diode, the diode have a third terminal and forth terminal, the third terminal with it is described The centre cap connection of coil；
Grid voltage generation unit, the grid voltage generation unit have the 4th with the diode 7th terminal of terminal connection, and the 7th terminal output pre-defined gate voltage is to connect described the One transistor and the second transistor；And
Capacitor, the capacitor have the 5th terminal and the 6th terminal, the 5th terminal with institute The point connection between the forth terminal of diode and the 7th terminal of the grid voltage generation unit is stated, And the 6th terminal is connected with reference point of potential,
Wherein, the electric capacity of the inductance of the coil and the capacitor is set to be worth accordingly, so as to Resonant frequency obtained in the LC resonance circuits including the coil and the capacitor is changed into The frequency of the second harmonic for the transmission signal being input in the pair of power input terminals, and
Wherein, the diode is fed to the third terminal according to the centre cap from the coil The signal level of the second harmonic of transmission signal adjusts the voltage at the third terminal.
2. amplifier according to claim 1, wherein, the diode and the capacitor It is configured to amplitude limiter circuit,
Wherein, the amplitude limiter circuit passes through to being fed to the diode from the centre cap of the coil The second harmonic of third terminal carry out amplitude limit and adjust the voltage at the third terminal of the diode, So that the letter for the distortion component being included in the output of the first transistor and the second transistor Number level is less than or equal to the predetermined value of the change of the signal level of the transmission signal.
3. amplifier according to claim 2, wherein, the first transistor and described Each in two-transistor has following characteristics：As the grid voltage reduces, the distortion point The minimum value of amount is offset towards height output side；
Wherein, the third terminal of the diode is anode, and the forth terminal of the diode is Negative electrode.
4. amplifier according to claim 2, wherein, the first transistor and described Each in two-transistor has following characteristics：As the grid voltage increases, the distortion point The minimum value of amount is offset towards height output side；
Wherein, the forth terminal of the diode is negative electrode, and the third terminal of the diode is Anode.
5. a kind of amplifier, including：
Power input terminals, the power input terminals receive single-ended transmission signal, and single-ended is described Transmission signal is the signal of twotone；
Power output terminal；
Wave filter, the wave filter have an input terminal and lead-out terminal, the input terminal with it is described Power input terminals connect, and the second harmonic of transmission signal described in the filter transfer；
Coil, the coil have the first terminal and Second terminal, the first terminal and the filtering The lead-out terminal connection of device；
Transistor, the transistor have the grid that is connected with the input terminal of the wave filter and with The lead-out terminal of the power output terminal connection；
Diode, the diode have third terminal and forth terminal, the 3rd end of the diode The sub Second terminal with the coil is connected；
Grid voltage generation unit, the grid voltage generation unit have the 4th with the diode 5th terminal of terminal connection, the 5th terminal export pre-defined gate voltage to connect the crystal Pipe；And
Capacitor, the capacitor have the 6th terminal and the 7th terminal, the 6th terminal with institute The point connection between the forth terminal of diode and the 5th terminal of the grid voltage generation unit is stated, And the 7th terminal is connected with reference point of potential,
Wherein, the electric capacity of the inductance of the coil and the capacitor is set to be worth accordingly, so as to Resonant frequency obtained in the LC resonance circuits including the coil and the capacitor is changed into The frequency of the second harmonic for the transmission signal being input in the power input terminals, and
Wherein, the diode is according to the third terminal that the diode is fed to via the coil The signal level of the second harmonic of transmission signal adjusts the voltage at the third terminal.
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EP2858237B1 (en) 2018-03-21
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EP2858237A1 (en) 2015-04-08
JP2015073227A (en) 2015-04-16
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CN104518745A (en) 2015-04-15
JP6263936B2 (en) 2018-01-24

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