CN207766253U - A kind of Direct conversion transmitter inhibiting local oscillator traction - Google Patents
A kind of Direct conversion transmitter inhibiting local oscillator traction Download PDFInfo
- Publication number
- CN207766253U CN207766253U CN201721929404.4U CN201721929404U CN207766253U CN 207766253 U CN207766253 U CN 207766253U CN 201721929404 U CN201721929404 U CN 201721929404U CN 207766253 U CN207766253 U CN 207766253U
- Authority
- CN
- China
- Prior art keywords
- effect transistor
- type field
- field effect
- switch
- capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Transmitters (AREA)
Abstract
The utility model discloses a kind of Direct conversion transmitters of inhibition local oscillator traction, including digital analog converter, low-pass filter, frequency mixer, voltage controlled oscillator and variable gain amplifier, the output end of the digital analog converter passes sequentially through low-pass filter and frequency mixer and the input terminal of variable gain amplifier connects, the frequency mixer is connect with voltage controlled oscillator, the variable gain amplifier includes amplification module, filter module and matching output module, and the output end of the frequency mixer passes sequentially through amplification module and filter module and connect with the input terminal for matching output module.The utility model filters out the second harmonic of the transmitting carrier frequency generated in Direct conversion transmitter by filter module, reduce pulling effect of the second harmonic to voltage controlled oscillator, to improve the quality of transmitting signal and emit the EVM of signal, radio circuit field can be widely applied to.
Description
Technical field
The utility model is related to radio circuit field more particularly to a kind of Direct conversion transmittings inhibiting local oscillator traction
Machine.
Background technology
In traditional Direct conversion transmitter, the signal that Analog Baseband generates is converted by digital analog converter (DAC)
At analog signal, frequency mixer is given after low-pass filter, the local oscillation signal generated with voltage controlled oscillator (VCO) in frequency mixer
It is directly mixed, certain power grade is then amplified to by variable gain amplifier (VGA).Direct conversion transmitter has
One big disadvantage, when VCO and output power work in same frequency, the output power of variable gain amplifier can leak or
VCO is fed back to, VCO output frequencies is caused to change, or even transmitter output factors is caused to increase and emit the evil of signal EVM
Change, here it is the pulling effects (pulling) to VCO.It is to make the shake of VCO to inhibit pulling effect, currently a popular way
Swing 2 times of transmitting carrier frequencies of frequency.Although doing so the pulling effect that can reduce to VCO, work as output power of transmitter mistake
When big, the second harmonic generated still can interfere VCO, to reduce the quality of transmitting signal, deteriorate the EVM of transmitting signal.
2 times of transmitting carrier frequencies of the concussion frequency of the VCO of Direct conversion transmitter in the present invention.
Explanation of nouns：
EVM：It is English Error Vector Magnitude abbreviation, means error vector magnitude, is at one to timing
The vector difference for carving ideal error free reference signal and actual transmission signal, can weigh the range error and phase of modulated signal comprehensively
Error.
Utility model content
In order to solve the above-mentioned technical problem, the purpose of this utility model is to provide a kind of direct upper change filtering out second harmonic
Channel transmitter inhibits the circuit of local oscillator traction.
Technical solution used by the utility model is：A kind of Direct conversion transmitter inhibiting local oscillator traction, including
Digital analog converter, low-pass filter, frequency mixer, voltage controlled oscillator and variable gain amplifier, the output of the digital analog converter
End passes sequentially through low-pass filter and frequency mixer and the input terminal of variable gain amplifier connects, the frequency mixer and voltage controlled oscillation
Device connects, and the variable gain amplifier includes amplification module, filter module and matching output module, the output of the frequency mixer
End passes sequentially through amplification module and filter module and is connect with the input terminal for matching output module.
Further, the filter module includes the second capacitance, third capacitance, the first inductance device and the second inductance device；
First output end of one end of second capacitance and amplification module connects, the other end of second capacitance and the
One end of one inductance device connects, the other end ground connection of first inductance device, one end and the amplification mould of the third capacitance
The second output terminal of block connects, and the other end of the third capacitance is connect with one end of the second inductance device, second inductance
The other end of device is grounded.
Further, first inductance device and the second inductance device are all made of packaging line and are formed, second capacitance and
Third capacitance is integrated on chip.
Further, the amplification module includes multiple transconductance cells, the output end of the frequency mixer respectively with each mutual conductance list
The input terminal connection of member, the output end of each transconductance cell are connect with the input terminal of filter module.
Further, each transconductance cell include phase inverter, the 4th capacitance, the 5th capacitance, first switch, second switch,
Third switch, the 4th switch, the first direct voltage source, the second direct voltage source, first resistor, second resistance, the first N-type field effect
Answer transistor, the second n type field effect transistor, third n type field effect transistor and the 4th n type field effect transistor；
First input end of the one end of 4th capacitance as transconductance cell, the other end and first of the 4th capacitance
The grid of n type field effect transistor connects, the second input terminal of one end of the 5th capacitance as transconductance cell, and the described 5th
The other end of capacitance is connect with the grid of the second n type field effect transistor, the source electrode of first n type field effect transistor and
The source grounding of two n type field effect transistors, the drain electrode and the field-effect of third N-type of first n type field effect transistor are brilliant
The source electrode of body pipe connects, and the drain electrode of second n type field effect transistor is connect with the source electrode of the 4th n type field effect transistor,
First output end of the drain electrode of the third n type field effect transistor as transconductance cell, the 4th n type field effect transistor
Second output terminal of the drain electrode as transconductance cell, the first resistor and second resistance are connected on the first N-type field effect transistor
Between the grid of pipe and the grid of the second n type field effect transistor, the tie point of the first resistor and second resistance respectively with
The first end of third switch is connected with the first end of the 4th switch, the second end ground connection of the third switch, four switch
Second end is connect with the anode of the second direct voltage source, the cathode ground connection of second direct voltage source, third N-type field effect
Answer transistor grid and the 4th n type field effect transistor grid connection, and tie point respectively with the first end of first switch
It is connected with the first end of second switch, the second end ground connection of the first switch, the second end of the second switch is straight with first
The anode connection of galvanic electricity potential source, the cathode ground connection of first direct voltage source, the third end of the second switch, the 4th switch
Third end and phase inverter input terminal connection, and control information input terminal of the tie point as transconductance cell, the phase inverter
The third end that is switched respectively with the third end of first switch and third of output end connect.
Further, the third n type field effect transistor and the 4th n type field effect transistor are all made of high pressure resistant N-type field
Effect transistor.
Further, first n type field effect transistor and the second n type field effect transistor are all made of low pressure N-type field effect
Answer transistor.
Further, the first switch, second switch, third switch and the 4th switch are all made of field-effect transistor.
The utility model has the beneficial effects that：A kind of Direct conversion transmitter inhibiting local oscillator traction, including digital-to-analogue turn
Parallel operation, low-pass filter, frequency mixer, voltage controlled oscillator and variable gain amplifier, the output end of the digital analog converter is successively
It is connected by the input terminal of low-pass filter and frequency mixer and variable gain amplifier, the frequency mixer connects with voltage controlled oscillator
Connect, the variable gain amplifier includes amplification module, filter module and matching output module, the output end of the frequency mixer according to
It is secondary to be connect with the input terminal of matching output module by amplification module and filter module.Direct conversion is filtered out by filter module
The second harmonic of the transmitting carrier frequency generated in transmitter reduces pulling effect of the second harmonic to voltage controlled oscillator, to carry
The high EVM of the quality and transmitting signal of transmitting signal.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model Direct conversion transmitter；
Fig. 2 is variable gain amplifier internal structure schematic diagram in the utility model specific embodiment；
Fig. 3 is the electronic circuitry of transconductance cell in the utility model specific embodiment.
Specific implementation mode
As shown in Figure 1, a kind of Direct conversion transmitter inhibiting local oscillator traction, including digital analog converter 1, low-pass filtering
Device 2, frequency mixer 3, voltage controlled oscillator 5 and variable gain amplifier 4, the output end of the digital analog converter 1 pass sequentially through low pass
Filter 2 and frequency mixer 3 are connect with the input terminal of variable gain amplifier 4, and the frequency mixer 3 is connect with voltage controlled oscillator 5, institute
It includes amplification module, filter module and matching output module to state variable gain amplifier 4, and the output end of the frequency mixer 3 is successively
It is connect with the input terminal of matching output module by amplification module and filter module.
With reference to Fig. 2, it is further used as preferred embodiment, the filter module includes the second capacitance C2, third capacitance
C3, the first inductance device L1 and the second inductance device L2；
One end of the second capacitance C2 and the first output end of amplification module connect, the other end of the second capacitance C2
It is connect with one end of the first inductance device L1, the other end ground connection of the first inductance device L1, the one of the third capacitance C3
End is connect with the second output terminal of amplification module, and the other end of the third capacitance C3 and one end of the second inductance device L2 connect
It connects, the other end ground connection of the second inductance device L2.
It is further used as preferred embodiment, the first inductance device L1 and the first inductance device L2 are all made of encapsulation
Line is formed, and the second capacitance C2 and third capacitance C3 are integrated on chip.
Be further used as preferred embodiment, the amplification module includes multiple transconductance cells, the frequency mixer 3 it is defeated
Outlet is connect with the input terminal of each transconductance cell respectively, and the output end of each transconductance cell connects with the input terminal of filter module
It connects.
It is further used as preferred embodiment, each transconductance cell includes phase inverter, the 4th capacitance C4, the 5th capacitance
C5, first switch S1, second switch S2, third switch S3, the 4th switch S4, the first direct voltage source VB1, the second DC voltage
Source VB2, first resistor R1, second resistance R2, the first n type field effect transistor M1, the second n type field effect transistor M2, the 3rd N
Type field effect transistor M 3 and the 4th n type field effect transistor M4；
First input end of the one end of the 4th capacitance C4 as transconductance cell, the other end of the 4th capacitance C4 with
The grid of first n type field effect transistor M1 connects, the second input terminal of one end of the 5th capacitance C5 as transconductance cell,
The other end of the 5th capacitance C5 is connect with the grid of the second n type field effect transistor M2, the first N-type field effect transistor
The source grounding of the source electrode of pipe M1 and the second n type field effect transistor M2, the drain electrode of the first n type field effect transistor M1
It is connect with the source electrode of third n type field effect transistor M3, drain electrode and the 4th N-type field of the second n type field effect transistor M2
The source electrode of effect transistor M4 connects, and the drain electrode of the third n type field effect transistor M3 is exported as the first of transconductance cell
End, second output terminal of the drain electrode as transconductance cell of the 4th n type field effect transistor M4, the first resistor R1 and the
Two resistance R2 are connected between the grid of the first n type field effect transistor M1 and the grid of the second n type field effect transistor M2, institute
State the tie point of the first resistor R1 and second resistance R2 first end with the first end and the 4th switch S4 of third switch S3 respectively
Connection, the second end ground connection of the third switch S3, the second end of four switch and the anode of the second direct voltage source VB2 are even
It connects, the cathode ground connection of the second direct voltage source VB2, the grid of the third n type field effect transistor M3 and the 4th N-type field
The grid of effect transistor M4 connects, and tie point connects with the first end of first switch S1 and the first end of second switch S2 respectively
It connects, the second end ground connection of the first switch S1, the anode of the second end of the second switch S2 and the first direct voltage source VB1
Connection, the cathode ground connection of the first direct voltage source VB1, the third end of the second switch S2, the third of the 4th switch S4
The connection of the input terminal of end and phase inverter, and control information input terminal of the tie point as transconductance cell, the output of the phase inverter
End is connect with the third end at the third end of first switch S1 and third switch S3 respectively.
It is further used as preferred embodiment, the third n type field effect transistor M3 and the 4th N-type field effect transistor
Pipe M4 is all made of high pressure resistant n type field effect transistor；
It is further used as preferred embodiment, the first n type field effect transistor M1 and the second N-type field effect transistor
Pipe M2 is all made of low pressure n type field effect transistor；
It is further used as preferred embodiment, the first switch S1, second switch S2, third switch S3 and the 4th are opened
It closes S4 and is all made of field-effect transistor.
The operation principle of above-mentioned Direct conversion transmitter circuitry is：The tranmitting frequency of transmitter is f, voltage controlled oscillator 5
Frequency of oscillation be 2 times of transmitting carrier frequency, as 2f.Because will have a direct impact on voltage controlled oscillation in the second harmonic of transmitter output
Device 5 filters out second harmonic, so filter module is arranged in the end of transmitter to avoid second harmonic to voltage controlled oscillation
The influence of device 5.In the present embodiment, filter module is made of capacitance in packaging line and piece, wherein inductance is formed using packaging line,
Because packaging line is arranged outside chip, the area of chip layout is not increased.The circuit of packaging line and capacitance composition in piece,
Can equivalent connecting at a capacitance C and inductance L, make inductance L with capacitance C resonance near 2 times of local frequency, inductance L
Filter is constituted with capacitance C, frequency filtering is near 2f, to filter out second harmonic.In circuit the first capacitance C1 and bar
The input inductance of human relations forms resonance circuit, and resonant frequency is near tranmitting frequency f, the match circuit outside the output contact pin of balun
And power amplifier, and then emission of radio frequency signals is gone out.
Amplification module includes multiple transconductance cells 6 in the present embodiment, with reference to Fig. 3, the 4th capacitance C4 and the 5th capacitance C5
For capacitance, radiofrequency signal enters amplifier section after capacitance and carries out gain amplification, finally brilliant from three N-type field-effects
The drain electrode of body pipe and the drain electrode of the 4th n type field effect transistor M4 export.Wherein, in order to reduce input load, the first N-type field is imitated
Transistor M1 and the second n type field effect transistor M2 is answered to use low pressure n type field effect transistor.Since the field-effect of third N-type is brilliant
The load of body pipe M3 and the 4th n type field effect transistor M4 are inductive loads, when output power is very big, third N-type field-effect
The drain voltage of transistor M3 and the 4th n type field effect transistor M4 can be more than supply voltage, therefore third N-type field effect transistor
Pipe M3 and the 4th n type field effect transistor M4 uses high pressure resistant n type field effect transistor.Control information in offset control portion
Input terminal is used for input control signal, and the control signal is for selecting different transconductance cells 6 to work.When selection should be across
When leading unit 6 and working, control signal input high level, second switch S2 and the 4th switch S4 are closed at this time, first switch S1 with
Third switch S3 is opened, then the grid of the grid of third n type field effect transistor M3 and the 4th n type field effect transistor M4 are by the
One direct voltage source VB1 biasings, the grid of the grid of the first n type field effect transistor M1 and the second n type field effect transistor M2
By the second direct voltage source VB2 biasing, to make the first n type field effect transistor M1, the second n type field effect transistor M2, the
Three n type field effect transistor M3 and the 4th n type field effect transistor M4 enter working condition.When control signal input low level
When, first switch S1 and third switch S3 are closed at this time, and second switch S2 and the 4th switch S4 are opened, and the first N-type field-effect is brilliant
The grid of body pipe M1, the second n type field effect transistor M2, third n type field effect transistor M3 and the 4th n type field effect transistor M4
It is extremely grounded, into cut-off state.
Above-mentioned Direct conversion transmitter circuitry can filter out second harmonic, reduce second harmonic to voltage controlled oscillator 5
Pulling effect, to improve transmitting signal quality and transmitting signal EVM.By using capacitance structure in packaging line and piece
At filter module, since packaging line is arranged outside chip, so do not increase the area of chip, and this is simple in structure, is not necessarily to
Change the circuit of voltage controlled oscillator 5, it is easy to implement.
It is to be illustrated to the preferable implementation of the utility model, but the utility model is not limited to the reality above
Example is applied, those skilled in the art can also make various equivalent changes without departing from the spirit of the present invention
Shape or replacement, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (8)
1. a kind of Direct conversion transmitter inhibiting local oscillator traction, which is characterized in that including digital analog converter, low-pass filtering
The output end of device, frequency mixer, voltage controlled oscillator and variable gain amplifier, the digital analog converter passes sequentially through low-pass filter
And the connection of the input terminal of frequency mixer and variable gain amplifier, the frequency mixer are connect with voltage controlled oscillator, the variable gain
Amplifier includes that amplification module, filter module and matching output module, the output end of the frequency mixer pass sequentially through amplification module
And filter module is connect with the input terminal of matching output module.
2. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 1, which is characterized in that the filter
Wave module includes the second capacitance, third capacitance, the first inductance device and the second inductance device；
One end of second capacitance and the first output end of amplification module connect, the other end of second capacitance and the first electricity
One end of induction device connects, the other end ground connection of first inductance device, one end of the third capacitance and amplification module
Second output terminal connects, and the other end of the third capacitance is connect with one end of the second inductance device, second inductance device
The other end ground connection.
3. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 2, which is characterized in that described the
One inductance device and the second inductance device are all made of packaging line and are formed, and second capacitance and third capacitance are integrated on chip.
4. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 1, which is characterized in that described to put
Big module includes multiple transconductance cells, and the output end of the frequency mixer is connect with the input terminal of each transconductance cell respectively, each described
The output end of transconductance cell is connect with the input terminal of filter module.
5. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 4, which is characterized in that each described
Transconductance cell includes phase inverter, the 4th capacitance, the 5th capacitance, first switch, second switch, third switch, the 4th switch, first
Direct voltage source, the second direct voltage source, first resistor, second resistance, the first n type field effect transistor, the second N-type field-effect
Transistor, third n type field effect transistor and the 4th n type field effect transistor；
First input end of the one end of 4th capacitance as transconductance cell, the other end and the first N-type of the 4th capacitance
The grid of field-effect transistor connects, and the second input terminal of one end of the 5th capacitance as transconductance cell, the described 5th is electric
The other end of appearance is connect with the grid of the second n type field effect transistor, the source electrode and second of first n type field effect transistor
The source grounding of n type field effect transistor, drain electrode and the third N-type field effect transistor of first n type field effect transistor
The source electrode of pipe connects, and the drain electrode of second n type field effect transistor is connect with the source electrode of the 4th n type field effect transistor, institute
First output end of the drain electrode of third n type field effect transistor as transconductance cell is stated, the 4th n type field effect transistor
The second output terminal to drain as transconductance cell, the first resistor and second resistance are connected on the first n type field effect transistor
Grid and the grid of the second n type field effect transistor between, the tie point of the first resistor and second resistance is respectively with
The first ends of three switches connects with the first end of the 4th switch, the second end ground connection of third switch, described four switch the
Two ends are connect with the anode of the second direct voltage source, the cathode ground connection of second direct voltage source, the third N-type field-effect
The grid of the grid of transistor and the 4th n type field effect transistor connect, and tie point respectively with the first end of first switch and
The first end of second switch connects, the second end ground connection of the first switch, the second end of the second switch and the first direct current
The anode connection of voltage source, the cathode ground connection of first direct voltage source, what the third end of the second switch, the 4th switched
The input terminal of third end and phase inverter connects, and control information input terminal of the tie point as transconductance cell, the phase inverter
The third end that output end is switched with the third end of first switch and third respectively is connect.
6. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 5, which is characterized in that described the
Three n type field effect transistors and the 4th n type field effect transistor are all made of high pressure resistant n type field effect transistor.
7. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 5, which is characterized in that described the
One n type field effect transistor and the second n type field effect transistor are all made of low pressure n type field effect transistor.
8. a kind of Direct conversion transmitter inhibiting local oscillator traction according to claim 5, which is characterized in that described the
One switch, second switch, third switch and the 4th switch are all made of field-effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721929404.4U CN207766253U (en) | 2017-12-30 | 2017-12-30 | A kind of Direct conversion transmitter inhibiting local oscillator traction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721929404.4U CN207766253U (en) | 2017-12-30 | 2017-12-30 | A kind of Direct conversion transmitter inhibiting local oscillator traction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207766253U true CN207766253U (en) | 2018-08-24 |
Family
ID=63182518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721929404.4U Expired - Fee Related CN207766253U (en) | 2017-12-30 | 2017-12-30 | A kind of Direct conversion transmitter inhibiting local oscillator traction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207766253U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111245371A (en) * | 2020-03-06 | 2020-06-05 | 重庆百瑞互联电子技术有限公司 | Power mixer, radio frequency circuit, device and equipment |
-
2017
- 2017-12-30 CN CN201721929404.4U patent/CN207766253U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111245371A (en) * | 2020-03-06 | 2020-06-05 | 重庆百瑞互联电子技术有限公司 | Power mixer, radio frequency circuit, device and equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105048972B (en) | The RF amplifiers of low output impedance | |
| CN108063624A (en) | A kind of Direct conversion transmitter and its suppressing method for inhibiting local oscillator traction | |
| CN103748785B (en) | High efficiency power amplifier | |
| CN103595359B (en) | 0.1-5GHz CMOS (complementary metal oxide semiconductor) power amplifier | |
| CN108768312A (en) | Utilize the circuit structure and method of controllable impedance and improvement power amplifier linearity | |
| CN107786168A (en) | A kind of double balanced passive Subharmonic mixers of high-gain high isolation millimeter wave | |
| CN104167994B (en) | Amplitude and phase tunable type pre-distortion linearizer | |
| CN104660290B (en) | A kind of electric current reusable radio frequency front-end with low power consumption receiving circuit | |
| CN101228689A (en) | Highly efficient amplifier | |
| CN108683409B (en) | Power mixer circuit | |
| CN103856177B (en) | Variable phase shifter, semiconductor integrated circuit and phase-moving method | |
| CN106385236A (en) | Active frequency mixer with high linearity and high gain and method | |
| CN106487344A (en) | A kind of CMOS technology 2400MHz linear power amplifier | |
| US20180332545A1 (en) | Multi-standard transmitter architecture with digital upconvert stage and gallium nitride (gan) amplifier circuit | |
| CN110113036A (en) | A kind of radio-frequency switch circuit structure of High Linear low harmony wave | |
| CN110011623A (en) | A kind of incorgruous power amplifier of dual band radio frequency | |
| CN105811899B (en) | A kind of power amplifier output-stage module and RF front-end module | |
| CN109787570A (en) | A kind of output matching circuit and the power amplifier being made of it | |
| CN104917466B (en) | A kind of pulse power amplifier of use drain modulation mode | |
| CN107306118A (en) | Power amplifier module | |
| CN207766253U (en) | A kind of Direct conversion transmitter inhibiting local oscillator traction | |
| CN105071778B (en) | A kind of Terahertz power amplifier realized based on CMOS technology | |
| CN108736847B (en) | High-efficiency inverse D-type stacked power amplifier based on accurate resonant circuit control | |
| CN207691763U (en) | Radio-frequency power amplifier for WI-FI modules | |
| CN101589547A (en) | System and method for on-chip im3 reduction over a broad range of operating powers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180824 Termination date: 20211230 |