CN104507641B - Polishing pad and its manufacture method - Google Patents
Polishing pad and its manufacture method Download PDFInfo
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- CN104507641B CN104507641B CN201380025329.7A CN201380025329A CN104507641B CN 104507641 B CN104507641 B CN 104507641B CN 201380025329 A CN201380025329 A CN 201380025329A CN 104507641 B CN104507641 B CN 104507641B
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- polishing layer
- polishing
- fine particles
- organic fine
- polishing pad
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
- B24D3/16—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings for close-grained structure, i.e. of high density
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/001—Manufacture of flexible abrasive materials
- B24D11/003—Manufacture of flexible abrasive materials without embedded abrasive particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of manufacture method of polishing pad, by mixing polishing layer formation material and making the material solidification through chemical reaction, methods described includes methods described：The step of organic material is to form organic fine particles is ground by using Physical；The step of organic fine particles formed in previous step are mixed with polishing layer formation with material；The step of inert gas, capsule-type foaming agent or CBA that are capable of control hole size are mixed to form stomata with the mixture obtained in previous step；The step of gelation and solidification are to be made polishing layer is carried out to the mixture obtained in previous step；With process the polishing layer with by opening stomata to make pore size distribution on the surface the step of.
Description
Technical field
The present invention relates to a kind of polishing pad and its manufacture method, more specifically, is related to a kind of polishing pad for including stomata
And its manufacture method, the polishing pad effectively can collect and supply polishing fluid (polishing slurry).
Background technology
Chemical-mechanical planarization/polishing (CMP) technique has been used for the planarization of semiconductor devices in worldwide, and
Because with increase wafer diameter, high integration, micro-line be wide and the tendency of Miltilayer wiring structure become important.
In a cmp process, the polishing velocity of chip and flatness are critically important, and the performance of this CMP depends on
The condition of CMP tool and polishing fluid and the performance of polishing pad as attrition component.Specifically, polishing pad can with chip table
The state supply polishing fluid of face contact, so that its is uniformly dispersing on chip, so that the abrasive particle included in polishing fluid and throwing
The protrusion of light pad causes physical friction.
In this case, the pad interface of directly contact chip needs to be impregnated with polishing fluid, so that polishing fluid smooth flow
It is dynamic.On this point, have been disclosed for forming micro-cavity (micro in pad interface in 5,578, No. 362 grades of United States Patent (USP)
Holes) the technology of (for example, hole (pores)).
In this fashion, it is important that keep pad interface to be impregnated with polishing fluid, exist so as to improve polishing pad
Effect and performance in CMP.Therefore, variously-shaped groove can be formed in polishing pad, to form larger liquid stream, and is led to
Cross and open above-mentioned poromerics and micro-cavity is formed in pad interface.
But when by introducing micro- liquid composition (liquid microelements) to form hole, existing to stablize
The advantages of landform pore-forming and reduction CMP temperature.However, following shortcomings also be present：Micro- liquid composition is in liquid, thus CMP
Will a small amount of micro- liquid composition of leakage in technical process.
Due to the development of CMP, the trial of multiple events is being controlled just by introducing fine additive into polishing fluid
It is increasing.Therefore, it is necessary to which the additive material that may influence CMP will not be entered in polishing pad.Only formed as one kind
Without making the method that additive material enters in polyurethane matrix, the introducing of stomata has attracted attention in pure hole.
It possesses advantages below：Stomata pad does not have the discharge material that may influence CMP.But, in stomata pad,
Stomata is not easily controlled, thus manufacturing process should be optimized.Moreover, it there is also problems with.
First, when by by gas be directly injected into the polyurethane matrix to form polishing pad or by introduce foaming agent and
When forming hole, it is difficult to the size and density of accurate control hole.Specifically, compared with other method, it is not easy to which manufacture has small
In the hole of 50 μm of size uniformity.
Secondly, in the case where not changing polyurethane matrix composition, it is very difficult to change the size and density in hole.
3rd, friction can not be smoothly carried out in pure polyurethane matrix, during due to being repaired using diamond disk, because
Phenomena such as this appearance may such as make hole glazing (the pore glazing) of hole plug.
The content of the invention
The invention provides a kind of polishing pad and its manufacture method, the polishing pad can be kept by introducing stomatal limiting value
The advantages of chemical-mechanical planarization/polishing (CMP) pad of loose structure (porosity), and can solve or improve above-mentioned common
Problem.
According to an aspect of the invention, there is provided a kind of manufacture method of polishing pad, with it, making polishing layer shape
Merga pass chemical reaction solidification is mixed into material, so as to manufacture polishing pad, methods described includes：(a) ground using Physical
Organic material is to form organic fine particles (micro-organic particle)；(b) by the organic fine particles formed in (a) and polishing
Layer formation is mixed with material；(c) by selected from the inert gas, capsule-type foaming agent and CBA by being capable of control hole size
At least one of group of composition mixes with the mixture in (b), to form stomata；(d) mixture of generation in (c) is carried out
Gelation and hardening, to form polishing layer；The polishing layer is processed, so as to by the perforate of opening stomata to limit divide (e)
Cloth is in polishing layer surface.
According to another aspect of the present invention, there is provided a kind of manufacture method of polishing pad, with it, making polishing layer
Formation mixes merga pass chemical reaction solidification with material, and so as to manufacture polishing pad, methods described includes：(a) form polishing layer
With including organic fine particles formation monomer in material, and by polymerizeing monomer after being stirred, to form organic fine particles simultaneously
Make it scattered；(b) by selected from the group by being capable of the inert gas of control hole size, capsule-type foaming agent and CBA form
At least one of mixed with the mixture in (a), to form stomata；(c) mixture of generation in (b) is carried out gelation and
Hardening, to form polishing layer；The polishing layer is processed, so as to by the perforate of opening stomata to limit be distributed in polishing (d)
In layer surface.
According to another aspect of the present invention, there is provided a kind of polishing pad, the polishing pad pass through with polishing subject surface
Contact it is mobile and be polished process, the polishing pad includes polishing layer, wherein, the polishing layer includes：Ground by physics
Mill organic material and the organic fine particles that are formed and by the chemical polymerization of monomer and at least one of organic fine particles for being formed；With
By the stomata formed selected from least one of group being made up of inert gas, capsule-type foaming agent and CBA, and
And the perforate by opening stomata to limit is distributed in polishing layer surface.
Brief description of the drawings
The illustrative embodiments of the present invention are described in detail by referring to accompanying drawing, make above-mentioned and other features of the present invention
It will become apparent to those skilled in the art with advantage, in accompanying drawing：
Fig. 1 is the sectional view of the polishing pad of an embodiment of the invention；
Fig. 2 is the schematic diagram for the polissoir for being mounted with the polishing pad shown in Fig. 1 thereon；
Fig. 3 (a) and 3 (b) are the diagrams of the organic fine particles included in the polishing layer shown in Fig. 1；
Fig. 4 (a) and 4 (b) are whether to include organic fine particles in the polishing layer according to Fig. 1 to obtain to compare polishing layer surface
Photo；
Fig. 5 and 6 is the flow for illustrating to manufacture the method for the polishing layer of polishing pad according to an illustrative embodiment of the invention
Figure；
Fig. 7 is the diagram for showing the surface roughness after being polished 10 minutes to Fig. 1 pad interface using diamond disk；
With
Fig. 8 is after polishing evaluation for a long time is carried out 5 hours to examine frictional behaviour, by comparing introducing organic fine particles
When surface roughness and surface roughness when being not introduced into organic fine particles and the photo that obtains.
Embodiment
The present invention is described more fully below with reference to accompanying drawings, and the exemplary embodiment party of the present invention is shown in accompanying drawing
Formula.
Fig. 1 is the sectional view of the polishing pad 100 of an embodiment of the invention.
As shown in figure 1, the polishing pad 100 of embodiments of the present invention includes support layer 110 and polishing layer 120.Support layer
110 are used to polishing pad 100 being fixed on platen 3, as shown in Figure 3.Support layer 110 is made up of the material with stability, with
The power of reply extruding silicon wafer 7 (that is, polishing object), silicon wafer 7 are carried at head 5 towards platen 3 so that support layer
110 are formed at the polishing layer 120 on support layer 110 with the homogeneous elasticity support relative to silicon wafer 7.Therefore, support layer 110 is led
To be made up of non-porous, solid and elastic homogeneous material, and its hardness is lower than the polishing layer 120 formed on support layer 110.
In addition, at least a portion of support layer 110 is transparent or semitransparent, put down with being used in detection polishing subject surface
The light beam 170 of whole degree can pass through support layer 110.In figure 3, polishing object has metal or insulating barrier as polishing layer
Silicon wafer 7.But, it can also be various substrates to polish object, such as will form Thin Film Transistor-LCD (TFT- thereon
LCD substrate, glass substrate, ceramic substrate and polymer plastic substrate).In addition, polishing pad 100 can be not comprising support layer
Manufactured in the case of 110.
Although having in addition, polishing pad 100 is as shown in Figure 2 suitable for the round-shaped of rotary-type polissoir 1, throw
Light pad 100 can be changed into according to the shape of polissoir 1 it is variously-shaped, such as rectangular shape and square shape.
As shown in Fig. 2 polishing layer 120 directly contacts the silicon wafer 7 as polishing object.Polishing layer 120 can be by mixed
Close predetermined polishing layer formation material or make its chemical bond and formed.
Herein, the material of the macromolecule matrix 130 formed with material, the i.e. shape of macromolecule matrix 130 are formed by polishing layer 120
Into with material, can include being selected from by polyurethane, polyethers, polyester, polysulfones, polyacrylic, makrolon, polyethylene, poly- first
Base methyl acrylate, polyvinyl acetate, polyvinyl chloride, polyethyleneimine, polyether sulfone, PEI, polyketone, melamine
At least one of group of amine, nylon, fluorohydrocarbon or combinations thereof.
, can be by including the dual liquid type of isocyanate prepolymer and curing agent as the instantiation of macromolecule matrix 130
Low-viscosity (mobile) liquid carbamate obtains polyurethane.Prepolymer as final polymer precursor includes oligomer or monomer.It is different
Cyanate prepolymer has average more than 2 isocyanate functional groups, and the content of reactive isocyanate be 4 parts by weight~
16 parts by weight, and such as polyalcohol such as polyethers, polyester (polyesther) or polytetramethylene glycol and toluene two can be passed through
Reaction between isocyanates or '-diphenylmethane diisocyanate and obtain, and isocyanate prepolymer can with isocyanide
The curing agent reaction of acid esters reactive group, and polyurethane can be ultimately formed.Herein, can use various polynary based on amine
Alcohol or polyethers and polyester, such as 4,4- methylene-bis- (2- chloroanilines) (hereinafter referred to MOCA) are used as curing agent.Polyurethane
Material character can be adjusted by the various combinations of component.
In this fashion, the macromolecule matrix 130 for forming polishing layer 120 is made up of various well-known components, thus will be saved
What slightly well known materials and material were molded further describes.
The forming process of polishing layer 120 can include：Casting mold process, wherein polyurethane prepolymer and curing agent are mixed each other
Close, be injected in mould, and make liquid charging stock chemosetting；Process is split, wherein curing materials are carried out according to application target
Cutting；With fluting process, wherein cutting pad in form fluid course.In the present invention, these processes are characterized mainly in that
The material category injected in casting mold process, to include certain material in polishing layer 120.
Specifically, organic fine particles are included in polishing layer 120 of the invention, in addition, can also include hole in polishing layer 120
141 and 142.
Herein, the particle that organic fine particles can be the particle that is formed by following copolymers or its mixing material is formed, it is described
Copolymer can be made by being mixed for manufacturing thermoplastic resin particle, the monomer of thermosetting resin particles and polymer.
It is selected from it is, organic fine particles can include by polyvinyl resin, acrylic resin, polystyrene resin, polychlorostyrene
Vinyl, polyamide, acrylic resin, polyurethane resin, polycarbonate resin, phenolic resin, amino resins, ring
Oxygen tree fat, Lauxite, polyester resin, rubber acrylonitrile-BS (ABS) and styrene-acrylonitrile are total to
At least one of group of polymers (SAN) composition.
Mainly using two methods (Physical and chemical method) organic fine particles can be made to be included in polishing layer 120.
According to Physical, organic material can be ground using mechanical means to form organic fine particles, then can will be organic
Particulate mixes with the formation of polishing layer 120 with material.
According to chemical method, organic fine particles formation monomer can be made to be included in the formation material of polishing layer 120, and can
With after agitating procedure by polymerizeing corresponding monomer to form organic fine particles and making its homogeneous scattered.
The state for including organic fine particles in the formation material of polishing layer 120 is shown in Fig. 3.
Fig. 3 (a) is the photomacrograph of organic fine particles, and Fig. 3 (b) is the magnification at high multiple photo of organic fine particles.
The hole 141 and 142 included in polishing pad 100 can be that its size can be by selected from by inert gas, capsule-type hair
The hole of at least one of the group of infusion, CBA and micro- liquid composition composition control.
Herein, micro- liquid composition is formed by fluent material, the fluent material and the macromolecule matrix for forming polishing layer 120
130 is incompatible, i.e. it is selected from the silicone oil for not having hydroxyl by Aliphatic mineral oils, aromatic mineral oil, its molecular end, greatly
Material in the group of soya-bean oil, coconut oil, palm oil, cottonseed oil, camellia oil, fixed oil or combinations thereof.
Micro- liquid composition can be dispersed in macromolecule matrix 130 with microspheroidal.Average ball diameter can be 1 μm~50 μm, example
Such as 10 μm~40 μm.The collection and supply of sphere diameter optimum polishing fluid 13 within the above range.However, sphere diameter can be according to throwing
The species of light liquid 13 and change, thus the size of micro- liquid composition can also change.
The species in hole 141 and 142 can be different from each other because of the forming method in hole 141 and 142.For example, hole 141 and 142
Formed by injecting inert gas, capsule-type foaming agent or CBA.
Herein, inert gas can be the chemically stable gas that valence state is 0, i.e. helium (He), neon (Ne), argon (Ar), krypton
(Kr), xenon (Xe) or radon (Rn).In addition, in addition to 0 race's element in the periodic table of elements, inert gas can also be not with high score
Any gas that subbase body 130 reacts, i.e. it is not involved in urethane reaction, such as N2.
Foaming agent mixes merga pass evaporation or heating response with predetermined material and produces a large amount of bubbles, and it can be broadly divided into
CBA and physical blowing agent.
In CBA, foam and carried out with carbon dioxide, carbon dioxide by using isocyanate groups activity
(vitality) and with water react and generate, therefore foaming agent uses water.In physical blowing agent, bubble passes through injected gas or profit
Reaction heat is produced with decomposability or vapo(u)rability foaming agent and is formed, therefore physical blowing agent is not involved in polymerizeing.These foaming agents
Therefore species and feature will be it is well known that will omit detailed description.
Hole 141 and 142 is by mixed inert gas or various foaming agents (capsule-type foaming agent or CBA) and shape
Into on polishing layer 120.It is bag that the different hole 141 controlled by a variety of methods and 142, Fig. 1 can be included in polishing pad 100
The sectional view of polishing pad 100 containing multiple hole 141 and 142.
As described above, whether Fig. 4 (a) and 4 (b) are to be included in the polishing layer 120 according to Fig. 1 comprising organic fine particles to compare
The sectional view of the polishing pad 100 in hole 141 and 142 and the photo obtained.
It is, Fig. 4 (a) shows in polishing layer 120 hole on the surface of polishing pad 100 when being not introduced into and (include) organic fine particles
Distribution, and Fig. 4 (b) shows the pore size distribution shape on the surface of polishing pad 100 when (including) organic fine particles are introduced in polishing layer 120
State.In Fig. 4 (a) and 4 (b), the other conditions for being used to be formed polishing pad 100 beyond organic fine particles are (as formed polishing pad 100
The condition such as the temperature and time of combined material) it is identical.
Photo such as Fig. 4 (a) and 4 (b) is more shown, when by including microparticle to form polishing pad 100, hole
Distribution is more fine and close.
In casting mold process, collecting the undiluted solution of polyurethane of gas orifice needs to need with proper viscosity and casting machine
There is sufficient stirring capacity, it is homogeneous so as to be stably formed when by gas or foaming agent injection polyurethane matrix
Aperture.It is less than water when can stably collect gas due to the viscosity of the most of polyurethane stock solutions used in the prior art
It is flat, therefore discharge the gas flow in air and be more than the gas flow kept in polyurethane, so that overall porosity reduces, thus it is difficult to
Form the hole of small size.
However, as shown in embodiments of the present invention, it is organic that (including) is introduced in the undiluted solution of polyurethane prepolymer
Particulate so that the viscosity of undiluted solution increases because of the interaction between organic fine particles and polyurethane, and this helps to be formed
Homogeneous aperture simultaneously obtains sufficiently high porosity.
, can also adjusting hole in addition, even if the composition of polyurethane matrix does not change because of the adjustment of organic fine particles content
Size and voidage.
The manufacture method of the polishing layer 120 of the polishing pad 100 of embodiment of the present invention is described next, with reference to Fig. 5.
First, organic material is ground using Physical and forms organic fine particles (S100), by organic fine particles and polishing layer 120
Formation is mixed (S110) with material.Specifically, by the above-mentioned formation material of macromolecule matrix 130 and ground organic fine particles
Mix (S110).
, will such as Ar inert gases (or replacing the predetermined foaming agent of inert gas) and macromolecule matrix in mixed processes
130 formation are mixed (S120) with material.
The combined amount of inert gas can adjust depending on its species according to the size in the hole for intending being formed.
Then, gelation and hardening (S130) are carried out.It is, inject the mixture into the mold with predetermined shape,
Then solidified by gelation and hardening.Gelation 80 DEG C~90 DEG C carry out 5 minutes~30 minutes, be hardened in 80 DEG C~
120 DEG C are carried out 20 hours~24 hours.But, processing temperature and time can carry out different changes, to provide optimal bar
Part.
Finally, the hardening structure body with predetermined shape of gained is processed (S140).Resulting structures body by from
Take out, cut, be surface-treated and cleaned to be processed in mold.First, the resulting structures body of hardening is taken out from mold,
And cut with predetermined thickness and shape.It is obvious that polishing layer 120 can be formed as sheet using any method, institute
The method of stating is, for example, known casting mold or extrusion in polymer sheet manufacturing field, to improve productivity ratio.Can be in polishing layer 120
Surface forms variously-shaped groove, so that polishing fluid 13 can equably supply on the whole working surface of polishing layer 120.
Polishing layer 120 is completed after cleaning process is carried out.During cleaning process, the surface of polishing layer 120 gushes out exposure
Hole 141 so that perforate 141 ' and 142 ' be distributed in polishing layer surface 160 on.
Polishing pad 100 only can be made up of polishing layer 120.But if necessary, the manufacturing field of polishing pad 100 can be utilized
In the method manufacture support layer 110 that is widely known by the people, and it is combined with polishing layer 120, to complete polishing pad 100.
Fig. 6 illustrates the method that the polishing layer 120 of polishing pad 100 is manufactured according to another embodiment of the present invention.
Fig. 6 method makes to include organic fine particles in polishing pad 100 different from place of Fig. 5 method being using chemical method.
It is, by polymerizeing corresponding monomer after agitating procedure, to make organic fine particles formation be contained in monomer
In the formation material of polishing layer 120, and form organic fine particles and it is dispersed in corresponding mixture solution.
Then, will form selected from the inert gas, capsule-type foaming agent and CBA by being capable of control hole size
At least one of group is blended in the mixture solution, to form stomata (S210).
Subsequent process, i.e. make mixture gelation and hardening to form the process of polishing layer 120 (S220) and processing work
Sequence (S230) is identical with above description, therefore will not be described in great detail.
The more details of the present invention will be described by illustrating specific experiment example.The details not described below can because of it
Released by those skilled in the art's technology and omitted.It is evident that the scope of the present invention is not limited to following experimental example.
<Experimental example 1>
1600g polytetramethylene glycols (molecular weight 1000) are put into 5l flasks, and at 100 DEG C~130 DEG C slowly
400g styrene monomers and very small amount of initiator A IBN are put into, with induced chemical reaction (polymerization), thus, it is possible to poly- four
Generated in methylene glycol and be dispersed with homogeneous particulate.It is dispersed with the viscosity of the polytetramethylene glycol of homogeneous organic fine particles
For 1,700cPs (25 DEG C).
<Experimental example 2>
The polytetramethylene glycol for being dispersed with homogeneous organic fine particles and 52g toluene manufactured in input 120g experimental examples 1
Diisocyanate, and in 70 DEG C~80 DEG C of thermotonus 4 hours~5 hours, so that the NCO content of final product is 9.0%.
The viscosity of obtained isocyanate prepolymer is 10,900cPs (25 DEG C).
<Experimental example 3>
Utilize the isocyanate prepolymer that casting machine manufactures in experimental example 2 and MOCA (a kind of carbamate curing agent)
(mixing ratio 10:3) reaction is induced between, while carrying out gas injection into mixture.The mixing of gas will be injected
Thing is put into 80 DEG C of rectangular casting mould.Hereafter, gelation about 30 minutes is carried out, hardening 20 is then carried out in baking oven at 100 DEG C
Hour.The mixture of hardening is taken out from mold, cuts the surface of the hardenable mixture, to form the polishing layer of polishing pad 100
120。
The photo in the hole formed accordingly on the surface of polishing layer 120 show in fig. 4 (b), in, average pore size be 32 μm.
After manufactured pad is polished 10 minutes using diamond disk, the surface roughness of pad is Ra 5.82, Rp 15.05
With Rv 24.07, as shown in Figure 7.
In Fig. 7, transverse axis represents the distance with the central shaft of polishing layer 120, and the longitudinal axis represents the height of polishing layer surface 160.
Polishing evaluation for a long time 5 hours is carried out, to examine the frictional behaviour of manufactured pad, its result is shown in fig. 8.
As shown in figure 8, compared with the situation for being not introduced into organic fine particles, surface roughness is changed when introducing organic fine particles
It is kind.
It is, organic fine particles are dispersed between polyurethane matrix, thus constitute between particle and polyurethane matrix
The interface of contact.It means that compared with the situation that polyurethane is in pure state, polyurethane is configured to have in interface weak attached
Put forth effort, may be such that when being repaired during CMP using diamond disk, polishing pad can show that preferably friction is special
Sign.
Therefore, organic fine particles contribute to the improvement of frictional behaviour, and show actively to make in the improvement of hole glazing phenomenon
With.
Although the present invention is particularly shown and described with reference to its illustrative embodiments, those skilled in the art will manage
Solution, can carry out the various changes in form and details, without departing from essence of the invention as defined by the following claims
And scope.
Industrial applicability
As described above, according to the present invention, (including) organic fine particles can be introduced in the undiluted solution of polyurethane prepolymer, are made
The viscosity of undiluted solution increases because of the interaction between organic fine particles and polyurethane, this helps to be formed homogeneous small
Hole simultaneously obtains sufficiently high porosity.
, can also adjusting hole in addition, even if the composition of polyurethane matrix does not change because of the adjustment of organic fine particles content
Size and porosity.
In addition, organic fine particles help to improve the frictional behaviour of generated pad interface, and hole glaze can be improved
Change phenomenon.
Claims (4)
1. a kind of manufacture method of polishing pad for CMP, the mixing of polishing layer formation material is made simultaneously by methods described
Solidified by chemically reacting, so as to manufacture the polishing pad, methods described includes：
(a) make to include organic fine particles formation monomer in polishing layer formation material, and by making the list after being stirred
Body polymerize, to form the organic fine particles and make it scattered；
(b) by selected from by being capable of in the inert gas of control hole size, the group that capsule-type foaming agent and CBA form
At least one mixes with the mixture in (a), to form stomata；
(c) gelation and hardening are carried out to the mixture of generation in (b), to form polishing layer；With
(d) polishing layer is processed, so as to be distributed in by the perforate for opening stomata to limit on the surface of the polishing layer.
2. the method for claim 1, wherein the organic fine particles include be selected from by polyvinyl resin, acrylic resin,
Polystyrene resin, Corvic, polyamide, acrylic resin, polyurethane resin, polycarbonate resin, phenol
Urea formaldehyde, amino resins, epoxy resin, Lauxite, polyester resin, rubber acrylonitrile-BS
(ABS) and SAN (SAN) composition at least one of group.
3. the method for claim 1, wherein 0 race element of the inert gas in by the periodic table of elements and not
The group that the gas reacted with the polishing layer formation with material forms.
4. the method as described in claim 1, methods described also includes, and liquid material is included in the polishing layer formation material
Material, the fluent material form micro- liquid composition in the polishing layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120054523A KR101417274B1 (en) | 2012-05-23 | 2012-05-23 | Polishing pad and manufacturing method thereof |
| KR10-2012-0054523 | 2012-05-23 | ||
| PCT/KR2013/001085 WO2013176378A1 (en) | 2012-05-23 | 2013-02-12 | Polishing pad and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104507641A CN104507641A (en) | 2015-04-08 |
| CN104507641B true CN104507641B (en) | 2018-01-05 |
Family
ID=49624027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380025329.7A Active CN104507641B (en) | 2012-05-23 | 2013-02-12 | Polishing pad and its manufacture method |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20150133039A1 (en) |
| EP (1) | EP2853350A4 (en) |
| JP (1) | JP5959724B2 (en) |
| KR (1) | KR101417274B1 (en) |
| CN (1) | CN104507641B (en) |
| SG (1) | SG11201407257TA (en) |
| WO (1) | WO2013176378A1 (en) |
Families Citing this family (12)
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| DE112014003158B4 (en) | 2013-07-05 | 2022-12-15 | Asahi Kasei Chemicals Corporation | An electrical part comprising an insulating resin molding and a method for stabilizing flame retardancy |
| CN104802099B (en) * | 2015-05-04 | 2017-07-21 | 华侨大学 | A kind of abrading block, its preparation method and application with big filings-containing cavity |
| US10457790B2 (en) * | 2016-04-06 | 2019-10-29 | Kpx Chemical Co., Ltd. | Method of manufacturing polishing pad |
| KR101894071B1 (en) | 2016-11-03 | 2018-08-31 | 에스케이씨 주식회사 | Uv-curable resin composition, polishing pad and preparation method thereof |
| KR102608960B1 (en) * | 2016-12-05 | 2023-12-01 | 삼성전자주식회사 | Method of manufacturing polishing pad for manufacturing integrated circuit device |
| KR101949911B1 (en) * | 2017-09-11 | 2019-02-19 | 에스케이씨 주식회사 | Porous polyurethane polishing pad and preparation method thereof |
| KR102088919B1 (en) * | 2017-09-11 | 2020-03-13 | 에스케이씨 주식회사 | Porous polyurethane polishing pad and preparation method thereof |
| CN109689299A (en) | 2017-09-11 | 2019-04-26 | Skc株式会社 | Cellular polyurethane polishing pad and preparation method thereof |
| CN109080061B (en) * | 2018-07-25 | 2021-06-11 | 南通德亿新材料有限公司 | Thermoplastic elastomer foaming particle casting molding process |
| CN109093538A (en) * | 2018-08-24 | 2018-12-28 | 成都时代立夫科技有限公司 | A kind of CMP pad treatment process |
| KR102502516B1 (en) * | 2021-03-12 | 2023-02-23 | 에스케이엔펄스 주식회사 | Polishing pad, manufacturing method thereof and preparing method of semiconductor device using the same |
| CN113414705B (en) * | 2021-07-12 | 2022-07-29 | 苏州赛尔特新材料有限公司 | Large-size double-layer flexible polishing pad and preparation method and application thereof |
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| CN1494987A (en) * | 2002-09-17 | 2004-05-12 | 韩国珀利尔有限公司 | Lapping pad containing embedded liquid trace component and its production method |
| CN1602321A (en) * | 2000-06-13 | 2005-03-30 | 东洋橡膠工业株式会社 | Process for producing polyurethane foam, polyurethane foam, and abrasive sheet |
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| KR20010055971A (en) * | 1999-12-13 | 2001-07-04 | 김진우 | Polymeric polising pad |
| JP2003011066A (en) * | 2000-07-25 | 2003-01-15 | Ebara Corp | Polishing tool and manufacturing method therefor |
| US7632434B2 (en) * | 2000-11-17 | 2009-12-15 | Wayne O. Duescher | Abrasive agglomerate coated raised island articles |
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2012
- 2012-05-23 KR KR1020120054523A patent/KR101417274B1/en active IP Right Grant
-
2013
- 2013-02-12 CN CN201380025329.7A patent/CN104507641B/en active Active
- 2013-02-12 SG SG11201407257TA patent/SG11201407257TA/en unknown
- 2013-02-12 JP JP2015508847A patent/JP5959724B2/en active Active
- 2013-02-12 US US14/397,542 patent/US20150133039A1/en not_active Abandoned
- 2013-02-12 EP EP13793745.4A patent/EP2853350A4/en not_active Withdrawn
- 2013-02-12 WO PCT/KR2013/001085 patent/WO2013176378A1/en active Application Filing
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| CN1602321A (en) * | 2000-06-13 | 2005-03-30 | 东洋橡膠工业株式会社 | Process for producing polyurethane foam, polyurethane foam, and abrasive sheet |
| CN1494987A (en) * | 2002-09-17 | 2004-05-12 | 韩国珀利尔有限公司 | Lapping pad containing embedded liquid trace component and its production method |
| TW200414974A (en) * | 2002-09-17 | 2004-08-16 | Korea Polyol Co Ltd | Polishing pad containing embedded liquid microelements and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015514598A (en) | 2015-05-21 |
| WO2013176378A1 (en) | 2013-11-28 |
| KR20130130893A (en) | 2013-12-03 |
| US20150133039A1 (en) | 2015-05-14 |
| SG11201407257TA (en) | 2014-12-30 |
| EP2853350A4 (en) | 2016-01-13 |
| CN104507641A (en) | 2015-04-08 |
| KR101417274B1 (en) | 2014-07-09 |
| JP5959724B2 (en) | 2016-08-02 |
| EP2853350A1 (en) | 2015-04-01 |
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