CN104505343B - A kind of method of making ZnO nanometer fence - Google Patents
A kind of method of making ZnO nanometer fence Download PDFInfo
- Publication number
- CN104505343B CN104505343B CN201410718583.1A CN201410718583A CN104505343B CN 104505343 B CN104505343 B CN 104505343B CN 201410718583 A CN201410718583 A CN 201410718583A CN 104505343 B CN104505343 B CN 104505343B
- Authority
- CN
- China
- Prior art keywords
- fence
- substrate
- zno nanometer
- making zno
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
Abstract
The invention discloses a kind of method of making ZnO nanometer fence, it is characterized in that, comprise the steps: (1) GaN substrate photoetching; (2) substrates coated Au catalyst reaction solution; (3) heated substrate, solution shrinks; (4) gold is reduced out from solution, distributes in closed annular; (5) use CVD by catalyst inducement growing ZnO nano-wire fence.The present invention utilizes the hydrophilic and hydrophobic difference on photoetching back substrate surface to control nanogold particle distribution, with this induced growth nano wire fence, is different from traditional control method, has obvious innovative significance and expects wider range of application.
Description
Technical field
The present invention relates to a kind of method of making ZnO nano semiconductor material, particularly relate to a kind of method of making ZnO nanometer fence.
Background technology
Zinc oxide (ZnO) has good piezoelectric as one, the semi-conducting material of photoelectric characteristic, it has excellent electricity, optics and chemical stability, relative to Si, the semi-conducting materials such as GaN it there is again large energy gap (Eg=3.37eV) and high exciton bind energy (60meV), One-Dimensional ZnO nanostructure has unique pattern and excellent properties, be made into multiple one-dimensional nano structure, such as nanometer rods, nano wire, nanotube, nanobelt, nano-comb, nanometer spring, nanometer bow and nanometer propeller etc. are applied in nano generator widely, nano laser, LED, transducer, novel nano device and the systems such as solar cell.The heterojunction semiconductor device be made up of third generation semi-conducting material ZnO and GaN shows great using value, and the GaN epitaxial layer of high-quality p, i, N-shaped has realized batch production.Because preparation method's difference of ZnO nano-wire causes structure to have diversity, and the performance of the pattern of ZnO nano-wire to ZnO nano device has a significant impact, and therefore seems extremely important to the control of the growth of ZnO one-dimensional nano line and arrangement to its application study.
First prior art adopts photoetching method to carve corresponding pattern at substrate to the preparation of ZnO nano-wire fence usually, then plated with gold catalyst film, after removing photoresist, substrate leaves rail shape catalyst pattern, and then with high temperature CVD growing ZnO nano-wire, the ZnO nano-wire fence that can generate thus.Its shortcoming is that photoresist is covered by golden film, striping difficulty, is difficult to do less by photoetching technique restriction fence size.Wang, the report such as X.D adopts the method for catalyst preparing nano wire fence, this method makes mask with packed mono-layer polystyrene microsphere (PS), gold evaporation is to substrate, form honeycomb Au catalyst, and then with high temperature CVD growing ZnO nano-wire, hexagonal nano wire fence can be generated.This method hexagon-shaped pattern size is controlled by PS ball size, length of side representative value about 0.5 μm of (Large-scalehexagonal-patternedgrowthofalignedZnOnanorods fornano-optoelectronicsandnanosensorarrays.NanoLetters, 2004.4 (3): p.423-426).The document adopts packed mono-layer polystyrene microsphere (PS) to replace photoresist and makes mask, technology relative complex.
Summary of the invention
In order to overcome above-mentioned technical problem, the object of the present invention is to provide a kind of method of making ZnO nanometer fence, comprising the steps: (1) GaN substrate photoetching; (2) substrates coated Au catalyst reaction solution; (3) heated substrate, solution shrinks; (4) gold is reduced out from solution, distributes in closed annular; (5) use CVD by catalyst inducement growing ZnO nano-wire fence.
The present invention further method comprises: first in GaN substrate, make certain pattern by lithography, then apply HAuCl
4with reducing agent mixed aqueous solution, heated substrate, treat that solvent volatilizees completely, wash away photoresist, the substrate processed is put into vacuum tube furnace, adopt with high temperature chemical vapor deposition method (CVD), the boat filling chemical reactant is placed in the middle of high-temperature tubular vacuum furnace, chemical reactant comprises oxide powder and zinc and graphite powder, substrate is placed in its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 800-1200 DEG C, then carrier gas is passed into, control pressure to 30-400 millibar, growth time sets according to required nanowire length, then vacuum tube furnace Temperature fall is allowed, GaN substrate can prepare zinc oxide nanowire fence.
In technique scheme, reducing agent be selected from the reproducibility organic molecules such as EG (ethylene glycol), ethanol, acetaldehyde or citric acid one or more.Variation of valence is different in the reaction for different reducing agent, and therefore proportioning is not fixing, obtains and determines according to chemical equation.HAuCl
4with reducing agent ratio when being less than stoicheiometry, namely keep the excessive state of reducing agent.
In above-mentioned any technical scheme, the temperature of heated substrate is 80-100 DEG C; Substrate is positioned over the airflow downstream 0-10cm scope of the boat filling chemical reactant.
In above-mentioned any technical scheme, the mass ratio of oxide powder and zinc and graphite powder is 1: 1-9: 4; Also the doped chemicals such as S, Co, Ni, P can be introduced.
In above-mentioned any technical scheme, carrier gas comprises working gas and oxygen; Working gas is selected from nitrogen, argon gas or helium.In carrier gas, oxygen partial pressure is 1-2%.
GaN substrate makes by lithography certain pattern and can adopt usual lithography step: 1, substrate cleans; 2, spin coating photoresist; 4, front baking; 5, exposure (mask plate provides photoengraving pattern); 6, development; 7, rear baking.
The present invention utilizes the hydrophilic and hydrophobic difference on photoetching back substrate surface to control nanogold particle distribution, with this induced growth nano wire fence, is different from traditional control method, has obvious innovative significance and expects wider range of application.GaN substrate after photoetching, due to the hydrophobicity on GaN surface, photoresist and substrate contact place are the places stopped after gold plating solution shrinks, and the Au catalyst particle finally generated also can be present in this place.Therefore, when making lipostomous by lithography, Au catalyst can along the closed distribution of bore edges, induced growth nanowire fence thus.The present invention utilizes the difference of substrate surface hydrophilic and hydrophobic to can be used to control catalyst distribution, thus controls the growth of nano material further, can apply to the preparation of other nano wire fence equally.Such as: can use the same method and prepare Au catalyst, to realize the control to InP nanowire growth position.Can also for the preparation of Fe catalyst, to realize the control to carbon nano tube growth position.
Accompanying drawing explanation
Accompanying drawing 1 is GaN substrate lithography step schematic diagram;
Accompanying drawing 2 is substrates coated Au catalyst reaction solution step schematic diagram;
Accompanying drawing 3 is heated substrate, and solution is contracted to step edge schematic diagram;
Accompanying drawing 4 is reduced out from solution for gold, becomes closed annular schematic diagram along stepped profile;
Accompanying drawing 5 is for using CVD by catalyst inducement growing nano fence schematic diagram;
Accompanying drawing 6 is ZnO nano-wire fence stereoscan photograph.
Embodiment
In order to understand the present invention further, below in conjunction with embodiment, the preferred embodiment of the invention is described, but should be appreciated that these describe just for further illustrating the features and advantages of the present invention, instead of limiting to the claimed invention.
Embodiment 1
GaN substrate makes by lithography certain pattern, lithography step: first coat photoresist (Su82000) film with spin coating method in the GaN substrate cleaned, then at 120 DEG C, 20min is toasted, lower employing uv-exposure (3mw is covered at 5 μm of printing opacity square hole mask plates, 30s), wash away exposed portion in developer solution, toast at 120 DEG C more than 20min can obtain photoetching after substrate.Then 5mMHAuCl is applied
4with 0.2v/v%EG mixed solution, heated substrate to 90 DEG C, treat that solvent volatilizees completely, wash away photoresist with acetone, the substrate processed is put into vacuum tube furnace, adopt with high temperature chemical vapor deposition method (CVD), the boat filling chemical reactant (oxide powder and zinc and graphite powder) is placed in the middle of high-temperature tubular vacuum furnace, substrate is placed in the 5cm of its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 960 degree, then the oxygen of 100sccm nitrogen and 1.5sccm is passed into, control pressure to 300 millibars, grow 20 minutes, then vacuum tube furnace Temperature fall is allowed, GaN substrate can be prepared zinc oxide nanowire fence (see accompanying drawing 6).
Embodiment 2
GaN substrate makes by lithography certain pattern, lithography step: first coat photoresist (Su82000) film with spin coating method in the GaN substrate cleaned, then at 120 DEG C, 20min is toasted, lower employing uv-exposure (3mw is covered at 5 μm of printing opacity square hole mask plates, 30s), wash away exposed portion in developer solution, toast at 120 DEG C more than 20min can obtain photoetching after substrate.Then 5mMHAuCl is applied
4with 0.2v/v% alcohol mixed solution, heated substrate to 100 DEG C, treat that solvent volatilizees completely, wash away photoresist with acetone; The substrate processed is put into vacuum tube furnace, adopt with high temperature chemical vapor deposition method (CVD), the boat filling chemical reactant (oxide powder and zinc and graphite powder) is placed in the middle of high-temperature tubular vacuum furnace, substrate is placed in the 8cm of its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 1200 degree, then the oxygen of 100sccm argon gas and 1.5sccm is passed into, control pressure to 100 millibars, grow 2 hours, then allow vacuum tube furnace Temperature fall, GaN substrate can prepare zinc oxide nanowire fence.
Embodiment 3
GaN substrate makes by lithography certain pattern, lithography step: first coat photoresist (Su82000) film with spin coating method in the GaN substrate cleaned, then at 120 DEG C, 20min is toasted, lower employing uv-exposure (3mw is covered at 5 μm of printing opacity square hole mask plates, 30s), wash away exposed portion in developer solution, toast at 120 DEG C more than 20min can obtain photoetching after substrate.Then 5mMHAuCl is applied
4with 0.2v/v% acetaldehyde mixed solution, heated substrate to 100 DEG C, treats that solvent volatilizees completely, washes away photoresist with acetone; The substrate processed is put into vacuum tube furnace, adopt with high temperature chemical vapor deposition method (CVD), the boat filling chemical reactant (oxide powder and zinc and graphite powder) is placed in the middle of high-temperature tubular vacuum furnace, substrate is placed in the 8cm of its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 1200 degree, then the oxygen of 100sccm argon gas and 1.5sccm is passed into, control pressure to 100 millibars, grow 2 hours, then allow vacuum tube furnace Temperature fall, GaN substrate can prepare zinc oxide nanowire fence.
Embodiment 4
GaN substrate makes by lithography certain pattern, lithography step: first coat photoresist (Su82000) film with spin coating method in the GaN substrate cleaned, then at 120 DEG C, 20min is toasted, lower employing uv-exposure (3mw is covered at 5 μm of printing opacity square hole mask plates, 30s), wash away exposed portion in developer solution, toast at 120 DEG C more than 20min can obtain photoetching after substrate.Then 5mMHAuCl is applied
4with 0.2v/v%EG mixed solution, heated substrate to 100 DEG C, treat that solvent volatilizees completely, wash away photoresist with acetone; The substrate processed is put into vacuum tube furnace, adopts with high temperature chemical vapor deposition method (CVD), place in the middle of high-temperature tubular vacuum furnace and fill chemical reactant (oxide powder and zinc, graphite powder and Al
2o
3powder mix) boat, substrate is placed in the 8cm of its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 1100 degree, then pass into the oxygen of 100sccm argon gas and 1.5sccm, control pressure to 100 millibars, grow 2 hours, then allow vacuum tube furnace Temperature fall, GaN substrate can be prepared Al doped zinc oxide nano-wire fence.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. a method for making ZnO nanometer fence, is characterized in that, comprises the steps: (1) GaN substrate photoetching, (2) substrates coated Au catalyst reaction solution, (3) heated substrate, solution shrinks, (4) gold is reduced out from solution, distributes in closed annular, (5) use CVD by catalyst inducement growing ZnO nano-wire fence, first in GaN substrate, make certain pattern by lithography, then apply HAuCl
4with reducing agent mixed aqueous solution, heated substrate, treat that solvent volatilizees completely, wash away photoresist, the substrate processed is put into vacuum tube furnace, adopt high temperature chemical vapor deposition method (CVD), the boat filling chemical reactant is placed in the middle of high-temperature tubular vacuum furnace, chemical reactant comprises oxide powder and zinc and graphite powder, substrate is placed in its airflow downstream position, then use mechanical pump electron tubes type stove evacuation, vacuum tube is heated to 800-1200 DEG C, then carrier gas is passed into, control pressure to 30-400 millibar, growth time sets according to required nanowire length, then vacuum tube furnace Temperature fall is allowed, the zinc oxide nanowire fence that GaN substrate can be prepared.
2. the method for making ZnO nanometer fence as claimed in claim 1, is characterized in that, described reducing agent be selected from EG (ethylene glycol), ethanol, acetaldehyde or citric acid one or more.
3. the method for making ZnO nanometer fence as claimed in claim 1, is characterized in that, described HAuCl
4with reducing agent ratio when being less than stoicheiometry, namely keep the excessive state of reducing agent.
4. the method for making ZnO nanometer fence as claimed in claim 1, it is characterized in that, the temperature of heated substrate is 80-100 DEG C.
5. the method for making ZnO nanometer fence as claimed in claim 1, it is characterized in that, described substrate is positioned over the airflow downstream 0-10cm scope of the boat filling chemical reactant.
6. the method for making ZnO nanometer fence as claimed in claim 1, it is characterized in that, the mass ratio of described oxide powder and zinc and graphite powder is 1: 1-9: 4.
7. the method for making ZnO nanometer fence as claimed in claim 1, it is characterized in that, described chemical reactant comprises Ga, Al, As, Sb, Cu, S, Co, Na, Ni or P doped chemical.
8. the method for making ZnO nanometer fence as claimed in claim 1, it is characterized in that, described carrier gas comprises working gas and oxygen.
9. the method for making ZnO nanometer fence as claimed in claim 8, it is characterized in that, described working gas is selected from nitrogen, argon gas or helium, and in carrier gas, oxygen partial pressure is 1-2%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410718583.1A CN104505343B (en) | 2014-12-01 | 2014-12-01 | A kind of method of making ZnO nanometer fence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410718583.1A CN104505343B (en) | 2014-12-01 | 2014-12-01 | A kind of method of making ZnO nanometer fence |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104505343A CN104505343A (en) | 2015-04-08 |
| CN104505343B true CN104505343B (en) | 2016-03-16 |
Family
ID=52947081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410718583.1A Active CN104505343B (en) | 2014-12-01 | 2014-12-01 | A kind of method of making ZnO nanometer fence |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104505343B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105152201B (en) * | 2015-08-12 | 2017-05-17 | 中国科学院重庆绿色智能技术研究院 | Method for preparing semiconductor zinc oxide nanomaterial |
| CN109813760A (en) * | 2019-02-28 | 2019-05-28 | 江苏理工学院 | A kind of zinc oxide nanowire gas sensor and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1789139A (en) * | 2005-12-29 | 2006-06-21 | 大连理工大学 | Method for directional growth of zinc oxide nano-belt |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7351607B2 (en) * | 2003-12-11 | 2008-04-01 | Georgia Tech Research Corporation | Large scale patterned growth of aligned one-dimensional nanostructures |
-
2014
- 2014-12-01 CN CN201410718583.1A patent/CN104505343B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1789139A (en) * | 2005-12-29 | 2006-06-21 | 大连理工大学 | Method for directional growth of zinc oxide nano-belt |
Non-Patent Citations (3)
| Title |
|---|
| Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic;Sheng Xu et al;《American Chemical Society》;20081016;第130卷(第45期);14958-14959页 * |
| 氧化锌纳米线阵列的制备工艺优化研究;韩祥云;《科技传播》;20140228;第149页左栏第3段 * |
| 韩祥云.氧化锌纳米线阵列的制备工艺优化研究.《科技传播》.2014, * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104505343A (en) | 2015-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Dick et al. | The morphology of axial and branched nanowire heterostructures | |
| CN103378239B (en) | Epitaxial structure | |
| JP2013542546A (en) | Transparent electrode based on graphene / lattice hybrid structure | |
| US8962137B2 (en) | Branched nanowire and method for fabrication of the same | |
| CN103378236B (en) | epitaxial structure with micro-structure | |
| CN103374751A (en) | Preparation method of extensional structural body with micro-structure | |
| CN102976264A (en) | Method for preparing self-supporting multilayer micro nano structure | |
| CN103862032A (en) | Core-shell precious metal nanorod with square superlattice and self-assembly method thereof | |
| JP2007105822A (en) | Atomic scale metal wire or metal nanocluster, and method for manufacturing same | |
| JP2014120548A (en) | Method of producing nanowire | |
| KR20150137101A (en) | Silane functionalized buffer layers and electronic devices comprising the same | |
| CN104505343B (en) | A kind of method of making ZnO nanometer fence | |
| CN107287653B (en) | Cadmium iodide two-dimensional material and preparation method thereof | |
| CN104402039B (en) | A kind of method preparing three-dimensional ZnO nano gauze | |
| CN106348244B (en) | A kind of graphene-based nanowire composite structures and preparation method thereof | |
| CN104762608A (en) | Preparation method for growth direction controllable horizontal CdS nanowire array | |
| JP2011100779A (en) | Semiconductor device and method of manufacturing the same | |
| CN104254925B (en) | The forming method of zinc oxide concaveconvex structure and utilize its manufacture method of solaode | |
| CN103757693B (en) | A kind of growing method of GaN nano wire | |
| KR20160144194A (en) | Method for preparing graphene using solid carbon source | |
| CN109962010B (en) | Wafer-level large-area semiconductor nanosheet and preparation method thereof | |
| US9725801B2 (en) | Method for implanted-ion assisted growth of metal oxide nanowires and patterned device fabricated using the method | |
| KR101772694B1 (en) | Method for fabricating nanostructure and method for fabricating electronic devices using the same | |
| KR100852684B1 (en) | Preparation methods of the selective nanowire | |
| CN103014845B (en) | A kind of method of micro/nano-scale Graphene self-assembled growth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |