CN104498218A - Preparation method of cleaning agent for solar silicon wafer - Google Patents
Preparation method of cleaning agent for solar silicon wafer Download PDFInfo
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- CN104498218A CN104498218A CN201410846537.XA CN201410846537A CN104498218A CN 104498218 A CN104498218 A CN 104498218A CN 201410846537 A CN201410846537 A CN 201410846537A CN 104498218 A CN104498218 A CN 104498218A
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Abstract
The invention provides a preparation method of a cleaning agent for a solar silicon wafer. The method comprises the following steps: (1) weighing the following raw materials in parts by weight: 50-100 parts of a reducing agent, 20-50 parts of sodium hydroxide, 20-50 parts of a preservative, 10-50 parts of sodium carbonate, 30-50 parts of sodium silicate, 10-60 parts of calcium chloride, 10-50 parts of dipropylene glycol monomethyl ether and 50-150 parts of water; (2) stirring, namely adding sodium silicate to water, and stirring evenly for 5-15 minutes; (3) sequentially adding the reducing agent, sodium hydroxide, preservative, sodium carbonate, calcium chloride and dipropylene glycol monomethyl ether to the step (2), and stirring for 10-30 minutes; and (4) putting the stirred cleaning agent in a place with good ventilation for 1-3 hours. The cleaning agent is convenient to prepare, low in cost, free of harm, water-saving, gentle to hands, safe and simple in cleaning process, good in cleaning effect and small in effect on human health.
Description
Technical field
The present invention relates to industry cleaning link field, particularly relate to a kind of clean-out system field of solar silicon wafers.
Background technology
The cleaning of solar silicon wafers refers to that cleaning silicon chip surface is subject to physics, chemistry or biological effect and the pollution layer that formed or tectum make it recover the process of original surface.The cleaning of solar silicon wafers has energy-conservation, consumption reduction, water saving, safety, stable yields, improves the quality of products, faster production, extension device work-ing life, reduce the effects such as environmental pollution and specious and human health.Current solar silicon wafers can produce dirt for a long time, as cleaned not in time, can affect products production, and most of clean-out system tool toxic substance, easily corrodes skin simultaneously.
Summary of the invention
The object of this invention is to provide a kind of clean-out system preparation method of solar silicon wafers, solve the problem that existing clean-out system easily corrodes skin.
Object of the present invention can be achieved through the following technical solutions;
A clean-out system preparation method for solar silicon wafers, its preparation method is as follows:
(1) starting material are taken by weight as follows:
Reductive agent 50-100 part, sodium hydroxide 20-50 part, sanitas 20-60 part, soda ash 10-50 part, anhydrous sodium metasilicate 30-50 part, calcium chloride 10-60 part, dipropylene glycol methyl ether 10-50 part, water 50-150 part;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 5-15min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 10-30min;
(4) clean-out system will be stirred and be placed on ventilation, 1-3 hour.
The clean-out system preparation method of above-mentioned a kind of solar silicon wafers, wherein, described reductive agent is 3:1 with the weight fraction ratio of sodium hydroxide.
The clean-out system preparation method of above-mentioned a kind of solar silicon wafers, wherein, described sanitas is 2:1 with the weight fraction ratio of soda ash.
The clean-out system preparation method of above-mentioned a kind of solar silicon wafers, wherein, described anhydrous sodium metasilicate is 2:5 with the weight fraction ratio of water.
The clean-out system preparation method of above-mentioned a kind of solar silicon wafers, wherein, described calcium chloride compares 2:3 with the weight fraction of dipropylene glycol methyl ether.
The clean-out system preparation method of above-mentioned a kind of solar silicon wafers, wherein, described sanitas is trichlorine formaldehyde.
The beneficial effect of this programme:
The clean-out system preparation method of a kind of solar silicon wafers provided by the invention, configuration is convenient, and cost is low, without harm, water saving, do not hinder hand, cleaning process is safe and simple, and cleaning performance is good, affects little on human health, by by repeatedly stirring, make it stir, configuration is convenient, and cost is low.
Embodiment
Embodiment 1: a kind of clean-out system preparation method of solar silicon wafers, its preparation method is as follows: it is as follows that (1) takes starting material by weight:
Reductive agent 60 parts, 20 parts, sodium hydroxide, sanitas 20 parts, soda ash 10 parts, anhydrous sodium metasilicate 30 parts, 10 parts, calcium chloride, dipropylene glycol methyl ether 15 parts, 75 parts, water;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 5min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 10min;
(4) clean-out system will be stirred and be placed on ventilation 1 hour.
Embodiment 2: a kind of clean-out system preparation method of solar silicon wafers, its preparation method is as follows: it is as follows that (1) takes starting material by weight:
Reductive agent 75 parts, 25 parts, sodium hydroxide, sanitas 30 parts, soda ash 15 parts, anhydrous sodium metasilicate 40 parts, 12 parts, calcium chloride, dipropylene glycol methyl ether 18 parts, 100 parts, water;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 10min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 20min;
(4) clean-out system will be stirred and be placed on ventilation 2 hours.
Embodiment 3: a kind of clean-out system preparation method of solar silicon wafers, its preparation method is as follows: it is as follows that (1) takes starting material by weight:
Reductive agent 90 parts, 30 parts, sodium hydroxide, sanitas 40 parts, soda ash 20 parts, anhydrous sodium metasilicate 50 parts, 16 parts, calcium chloride, dipropylene glycol methyl ether 48 parts, 125 parts, water;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 15min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 30min;
(4) clean-out system will be stirred and be placed on ventilation 3 hours.
The clean-out system preparation method of a kind of solar silicon wafers provided by the invention, configuration is convenient, and cost is low, without harm, water saving, do not hinder hand, cleaning process is safe and simple, and cleaning performance is good, affects little on human health, by by repeatedly stirring, make it stir, configuration is convenient, and cost is low.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (7)
1. a clean-out system preparation method for solar silicon wafers, it is characterized by, its preparation method is as follows:
(1) starting material are taken by weight as follows:
Reductive agent 50-100 part, sodium hydroxide 20-50 part, sanitas 20-60 part, soda ash 10-50 part, anhydrous sodium metasilicate 30-50 part, calcium chloride 10-60 part, dipropylene glycol methyl ether 10-50 part, water 50-150 part;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 5-15min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 10-30min;
(4) clean-out system will be stirred and be placed on ventilation, 1-3 hour.
2. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and preferably, its preparation method is as follows:
(1) starting material are taken by weight as follows:
Reductive agent 60 parts, 20 parts, sodium hydroxide, sanitas 20 parts, soda ash 10 parts, anhydrous sodium metasilicate 30 parts, 10 parts, calcium chloride, dipropylene glycol methyl ether 15 parts, 75 parts, water;
(2) stir: anhydrous sodium metasilicate is added to the water, stir 5min, stir;
(3) then by reductive agent, sodium hydroxide, sanitas, soda ash, calcium chloride, dipropylene glycol methyl ether adds in step (2) successively, stirs 10min;
(4) clean-out system will be stirred and be placed on ventilation 1 hour.
3. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and described reductive agent is 3:1 with the weight fraction ratio of sodium hydroxide.
4. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and described sanitas is 2:1 with the weight fraction ratio of soda ash.
5. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and described anhydrous sodium metasilicate is 2:5 with the weight fraction ratio of water.
6. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and described calcium chloride compares 2:3 with the weight fraction of dipropylene glycol methyl ether.
7. the clean-out system preparation method of a kind of solar silicon wafers as claimed in claim 1, is characterized by, and described sanitas is trichlorine formaldehyde.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410846537.XA CN104498218A (en) | 2014-12-31 | 2014-12-31 | Preparation method of cleaning agent for solar silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410846537.XA CN104498218A (en) | 2014-12-31 | 2014-12-31 | Preparation method of cleaning agent for solar silicon wafer |
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| CN104498218A true CN104498218A (en) | 2015-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410846537.XA Pending CN104498218A (en) | 2014-12-31 | 2014-12-31 | Preparation method of cleaning agent for solar silicon wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| WO2021060569A1 (en) * | 2019-09-24 | 2021-04-01 | Busisa Margaret Eboso | Hygienic odor reducing agent in sanitary areas |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102477358A (en) * | 2010-11-29 | 2012-05-30 | 江苏协鑫硅材料科技发展有限公司 | Silicon wafer cleaning agent |
| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
| CN103484261A (en) * | 2012-06-13 | 2014-01-01 | 浙江瑞翌新材料科技有限公司 | Solar silicon wafer cleaning agent |
-
2014
- 2014-12-31 CN CN201410846537.XA patent/CN104498218A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
| CN101892132A (en) * | 2010-07-23 | 2010-11-24 | 北京工业大学 | Solar silicon slice cleaning agent and method for preparing same |
| CN102477358A (en) * | 2010-11-29 | 2012-05-30 | 江苏协鑫硅材料科技发展有限公司 | Silicon wafer cleaning agent |
| CN102660409A (en) * | 2012-05-14 | 2012-09-12 | 陕西省石油化工研究设计院 | Cleaning agent for silicon wafer of photovoltaic cell and preparation method for cleaning agent |
| CN103484261A (en) * | 2012-06-13 | 2014-01-01 | 浙江瑞翌新材料科技有限公司 | Solar silicon wafer cleaning agent |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107118873A (en) * | 2017-06-26 | 2017-09-01 | 张兆民 | A kind of solar monocrystalline silicon slice cleaning agent |
| WO2021060569A1 (en) * | 2019-09-24 | 2021-04-01 | Busisa Margaret Eboso | Hygienic odor reducing agent in sanitary areas |
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Application publication date: 20150408 |
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