CN104485400B - Epitaxial structure of III-V nitride and growth method thereof - Google Patents
Epitaxial structure of III-V nitride and growth method thereof Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 49
- 230000012010 growth Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000004744 fabric Substances 0.000 claims description 31
- 230000037230 mobility Effects 0.000 claims description 22
- 208000012868 Overgrowth Diseases 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- 239000012744 reinforcing agent Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 230000001351 cycling effect Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000006911 nucleation Effects 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 1
- 150000002830 nitrogen compounds Chemical class 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 230000007773 growth pattern Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000010261 cell growth Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/16—Controlling or regulating
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- C30B29/10—Inorganic compounds or compositions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The invention discloses an epitaxial structure of III-V nitride and a growth method thereof. The growth method comprises the following steps: providing a patterned substrate; growing an underlying structure of an AlN buffer layer on the patterned substrate, wherein the underlying structure is gradually covered with the patterned substrate from the bottom of the patterned substrate to the top of the patterned substrate, so that the upper surface of the underlying structure trends to be smooth, the underlying structure can bend through partial dislocation due to two-dimensional lateral growth, the AlN buffer is relatively difficult to nucleate and grow on the side face of the patterned substrate in lateral epitaxy, and thus an air layer gap is formed between the underlying structure and the side face of the patterned substrate; continuously growing the AlN buffer layer on the underlying structure until the upper surface is approximately smooth; growing an III-V nitride layer on the approximately smooth AlN buffer layer, thereby improving the epitaxial quality of the III-V nitride layer, reducing the lattice imperfection and promoting the luminous efficiency.
Description
Technical field
The present invention relates to technical field of semiconductor, the extension III-V nitride material particularly in patterned substrate
Material.
Background technology
Light emitting diode has low long service life, caloric value, fast response time, environmental protection, safety, small volume etc. significantly excellent
Point.Wherein, deep-UV light-emitting diode of the wavelength between 220 ~ 350nm is in biologic medical, authentication, water and air purification
There is important application Deng field.
Compared with blue-ray LED, current deep-UV light-emitting diode external quantum efficiency is still low, with AlGaN base deep ultraviolet LED
As a example by, it is primarily present problems with：（1）The piezoelectric polarization and spontaneous polarization strength of AlGaN layer is big, luminescent layer meeting aggressive bend,
The compound probability in electronics and hole is reduced, causes internal quantum efficiency low；（2）As Al components rise, the acceptor activation of Mg increases
Plus, cause the hole concentration under the cave of room extremely low；（3）As Al components rise, metal becomes big with the contact berrier of AlGaN layer, leads
Contact resistance is caused to rise；（4）Al atomic mobilitys are low, and with the rising of Al components, it is bigger that the control of two-dimensional growth becomes difficulty,
It is difficult to that growth defect density is low, surfacing epitaxial layer, affects the lifting of luminous efficiency.The application of patterned substrate can be very big
The impact of total reflection is alleviated on ground, increases light extraction efficiency, lifts 1 ~ 2 times of luminous efficiency；Additionally, in order to reduce light absorbs, it is high
The deep-UV light-emitting diode of Al components is needed using AlN cushions, but due to Al atomic mobilitys it is low, using traditional growth
Mode is difficult with AlN cushions in graphical sapphire substrate（Abbreviation PSS substrates）Upper length is put down.
Epitaxial gan layers technique on traditional PSS figures, because the mobility of Ga is higher, easily migrates to minimum energy life
It is long, therefore grown buffer layer is only in PSS bottom growns, then controls low temperature, high pressure growth using GaN layer first along three-dimensional life
It is long, then using high temperature（Growth temperature is typically more than 1250 DEG C）, low pressure and control V/III growing method controlling steering two
Dimension lateral growth, PSS substrates are filled and led up.And adopt Conventional cryogenic（Less than 1150 DEG C）MOCVD carrying out epitaxial growth AlN,
It is general using pulse ald come plain film Sapphire Substrate extension AlN thin film, or by TMIn be used as surfactant come
Improve the flatness of the AlN thin film of extension in plain film Sapphire Substrate（Chinese patent CN101603172A）, but due to Al it is former
The mobility of son is relatively low, uses conventional methods very big in PSS substrate Epitaxial growth AlN thin film difficulty, and Al atoms cannot be obtained
Enough to energy transfer it is redeposited to minimum energy point, grow non-selectivity, the complete AlN thin film of epitaxial growth is in dashing forward one by one
The hexagonal column for rising, it is difficult to obtain smooth epitaxial surface.It is therefore desirable to proposing a kind of extension of new III-V nitride
Structure and its growing method.
The content of the invention
The invention provides a kind of structure and its method of the extension III-V nitride in patterned substrate, adopt
The method of the Enhanced mobility that TMIn/Cp2Mg is either simultaneously or alternately passed through, lifts the mobility of Al atoms, first in patterned substrate
The fabric of growing AIN cushion, then Lateral Deposition AlN thin film again, lifts the laterally overgrown speed of AlN, makes AlN
Thin film is merged on the top of patterned substrate, so as to form the AlN cushions with air lamellar spacing, and then improves follow-up
The growth quality of III-V nitride layer, improving luminous efficiency is applicable to make AlGaN base deep-UV light-emitting diodes.
Smooth AlN cushions have the following advantages：First, even curface is provided, is conducive to follow-up III-V nitride layer
Extension, i.e., smooth AlN cushions can play good cushioning effect；2nd, the structure can adopt MOCVD methods, MBE
Method or HVPE method homepitaxy modes are formed in situ, and the outer Yanzhong that can be easily fused to III-V nitride is gone.
According to the first aspect of the invention, the epitaxial structure of III-V nitride, including：Patterned substrate, positioned at figure
The AlN cushions of shape substrate and the III-V nitride layer on AlN cushions, it is characterised in that：It is described
The fabric filling patterned substrate bottom of AlN cushions, and air lamellar spacing is formed between patterned substrate side, can
Stress between release profiles substrate and III-V nitride layer, and the upper surface of AlN cushions still keeps substantially flat,
For improving the epitaxial quality of III-V nitride layer, lattice defect, improving extraction efficiency are reduced.
Further, the thickness of the AlN cushions is 0.5 ~ 5 μm.
Further, the thickness of the fabric is not less than the height of patterned substrate.
Further, the graphic substrate material is sapphire, silicon, carborundum or gallium nitride.
Further, the III-V nitride layer is AlN, GaN, AlxGa1-xN、AlxIn1-xN、InyGa1-yN or
(AlxGa1-x)1-yInyThe single or multiple lift structure such as N, wherein 0<x<1,0<y<1.
According to the second aspect of the invention, the growing method of III-V nitride epitaxial structure, including step：There is provided
One patterned substrate；The fabric of growing AIN cushion in the patterned substrate, its growth course is from patterned substrate
Bottom gradually cover to the top of patterned substrate so that fabric upper surface tends to smooth；On the fabric
Continued growth AlN cushions, until upper surface is substantially flat；Iii-v nitrogen is grown on the substantially flat AlN cushions
Compound layer, so as to improve the epitaxial quality of III-V nitride layer, reduces lattice defect, improving extraction efficiency.
In certain embodiments, the fabric of the AlN cushions is formed by following steps：
（1）Reative cell growth temperature is 850 ~ 950 DEG C, and pressure is 500Torr, and TMAl sources are passed through in advance, deposits one layer of Al original
Son, because Al atomic mobilitys are relatively low, is covered in each position of patterned substrate randomness；
（2）The temperature of reative cell is risen to into 1050 DEG C, reaction chamber pressure is down to 100 ~ 200Torr, be passed through TMIn sources and
Cp2Mg sources, In/Mg as surface mobility reinforcing agent, can REINFORCED Al atom surface mobility and epitaxial lateral overgrowth speed so that
Al atoms are gradually migrated and assembled to the bottom of the patterned substrate of minimum energy；
（3）Reaction chamber temperature is kept to be 1050 DEG C, reaction chamber pressure is 100Torr, then is passed through NH3Carry out nitrogen treatment,
Growing AIN nucleating layer；
（4）Reaction chamber temperature is risen to into 1150 DEG C, reaction chamber pressure is down to 50 ~ 100Torr, is passed through TMAl/NH3Gas, after
Continuous growing AIN thin layer, makes AlN thin film carry out epitaxial lateral overgrowth, because the longitudinal growth speed of AlN is higher than lateral growth speed（It is vertical
It is 8 ~ 20 to/lateral speed ratio）, lateral growth speed is slower, after AlN merges above patterned substrate, AlN not with graphically
The inclined-plane of substrate merges, so as to air lamellar spacing in an inverted cone；
（5）With above-mentioned（1）~（4）Step is up deposited as cycle, cycling deposition from patterned substrate bottom, until side
Outwards being extended down to patterned substrate top above position carries out the merging of AlN cushions so that fabric upper surface tends to smooth.
Further, in the loop cycle growth forming process of the fabric of the AlN cushions, due to two-dimentional lateral
Growth, bends can partial dislocation, and while epitaxial lateral overgrowth, the more difficult side in patterned substrate of AlN cushions is carried out
Nucleation and growth, so as to form air lamellar spacing, can efficiently reduce the generation of dislocation, reduce dislocation density, improve lattice
Quality.
Further, the step（2）In TMIn sources and the mode that is passed through in Cp2Mg sources be passed through to be continuously passed through or be interrupted
Or gradual change is passed through.
Further, the step（5）Middle cycle growth thickness is 1 ~ 5nm, and cycling deposition periodicity is 200 ~ 2000.
Further, after forming the fabric of AlN cushions, the continued growth AlN bufferings on the fabric
Layer, until upper surface is substantially flat；Then, further extension III-V nitride, III-V nitride include AlN,
GaN、AlxGa1-xN、AlxIn1-xN、InyGa1-yN or (AlxGa1-x)1-yInyThe single or multiple lift structure such as N, wherein 0<x<1, 0 <y
<1。
In addition, aforementioned epitaxial growth regime includes but is not limited to the life of MOCVD methods, MBE methods and HVPE methods homepitaxy
Long mode.
Description of the drawings
Fig. 1 is the structural representation of the extension III-V nitride in patterned substrate proposed by the present invention.
Fig. 2 ~ Fig. 7 is each step schematic diagram of the growth pattern of the AlN cushions of the present invention.
Fig. 8 changes over schematic diagram for the corresponding each gas source flux of formation AlN cushions of embodiment 1.
Fig. 9 changes over schematic diagram for the corresponding each gas source flux of formation AlN cushions of embodiment 2.
Figure 10 changes over schematic diagram for the corresponding each gas source flux of formation AlN cushions of embodiment 3.
Figure 11 changes over schematic diagram for the corresponding each gas source flux of formation AlN cushions of embodiment 4.
Illustrate：10：Patterned substrate；20：AlN cushions；21：The fabric of AlN cushions；21a：Al is former
Son；21b：Air lamellar spacing；30：III-V nitride layer.
Specific embodiment
The structural representation of extension III-V nitride in patterned substrate proposed by the invention is shown in accompanying drawing 1.By scheming
1 understands, III-V nitride epitaxial structure, including：The bottom is patterned substrate 10, and backing material selects sapphire；It is located at
AlN cushions 20 on patterned substrate 10, fabric 21a and the side of patterned substrate 10 of the AlN cushions 20
Between form air lamellar spacing 21b, and the upper surface of AlN cushions 20 still keeps substantially flat；And positioned at AlN cushions 20
On III-V nitride layer 30, III-V nitride can include AlN, GaN, AlxGa1-xN、AlxIn1-xN、InyGa1- yN or (AlxGa1-x)1-yInyThe single or multiple lift structure such as N, wherein 0<x<1, 0<y<1.Because the III-V nitride layer 30 is
By obtaining on the substantially flat AlN cushions 20 in surface, therefore the epitaxial quality of III-V nitride layer is improved, subtracted
Few lattice defect, improving extraction efficiency.
Below using MOCVD epitaxy growth pattern, the present invention will be further described.
As described in Figure 1, a patterned substrate 10, material selection sapphire are first provided, base diameter is 0.5 ~ 5 μm, Space
（Interval）It it is highly 0.5 ~ 3 μm for 100 ~ 1000nm, in 0.9 μm of the preferred base of the present embodiment, Space is 100nm, is highly
0.6 μm of patterned substrate；Then patterned substrate 10 is placed in into MOCVD device（Not shown in figure）, in the graphical lining
The fabric 21 of growing AIN cushion on bottom 10, gradually covers to the top of patterned substrate from the bottom of patterned substrate 10
Portion so that fabric upper surface tends to smooth；The continued growth AlN cushions 20 on the fabric 21, until upper table
Face is substantially flat；III-V nitride layer 30 is grown on the substantially flat AlN cushions 20, so as to improve iii-v
The epitaxial quality of nitride layer, reduces lattice defect, improving extraction efficiency.
Below in conjunction with the accompanying drawings the growth pattern of 2 ~ 7 pairs of AlN cushions is described further.
In MOCVD device, conventional Al sources and N sources is respectively TMAl and NH3, and In sources and Mg sources are respectively TMIn sources
With Cp2Mg sources.
（1）As shown in Fig. 2 reative cell growth temperature is 850 ~ 950 DEG C, pressure is 500Torr, is first passed through TMAl sources in advance,
One layer of Al atom 21a of deposition, because Al atomic mobilitys are relatively low, unevenly can be covered in each of patterned substrate 10 by randomness
Individual position；
（2）As shown in Figures 3 and 4, the temperature of reative cell is risen to into 1050 DEG C, reaction chamber pressure is down to 100 ~ 200Torr, then
Be passed through TMIn sources and Cp2Mg sources, In/Mg as surface mobility reinforcing agent, can REINFORCED Al atom 21a surface mobility and side
To extension speed so that Al atoms are gradually migrated and assembled to the bottom of the patterned substrate 10 of minimum energy；
（3）As shown in figure 5, keeping reaction chamber temperature to be 1050 DEG C, reaction chamber pressure is 100Torr, then is passed through NH3Carry out
Nitrogen treatment, growing AIN nucleating layer；
（4）As shown in fig. 6, reaction chamber temperature is risen to into 1150 DEG C, reaction chamber pressure is down to 50 ~ 100Torr, is passed through
TMAl/NH3Gas, continued growth AlN thin layers make AlN thin film carry out epitaxial lateral overgrowth, because the longitudinal growth speed of AlN is higher than side
To growth rate（Longitudinally/laterally speed ratio is 8 ~ 20）, lateral growth speed is slower, after AlN merges above patterned substrate,
AlN does not merge with the inclined-plane of patterned substrate, so as to air lamellar spacing in an inverted cone；
（5）With above-mentioned（1）~（4）Step is circulated growth as the cycle, and each cycle growth thickness is 1 ~ 5nm, is circulated
Growth cycle number is 200 ~ 2000, is thus gradually up deposited from patterned substrate bottom, until epitaxial lateral overgrowth is to graphical lining
Bottom top above position carries out the merging of AlN cushions, i.e. the thickness of fabric is not less than the height of patterned substrate so that
The upper surface of fabric 21 of AlN cushions tends to smooth；
（6）As shown in fig. 7, after the fabric 21 for forming AlN cushions, the continued growth on the fabric
AlN cushions 20, until upper surface is substantially flat.
As shown in Fig. 2 ~ Fig. 7, in the loop cycle growth forming process of the fabric 21 of AlN cushions, due to two
Dimension lateral growth, bends can partial dislocation, while epitaxial lateral overgrowth, the more difficult side in patterned substrate of AlN cushions
Face carries out nucleation and growth, so as to form air lamellar spacing 21b, between releasable patterned substrate and III-V nitride layer
Stress, efficiently reduce the generation of dislocation, reduce dislocation density, improve lattice quality.Further, since air lamellar spacing 21b
It is formed between AlN cushions and the side of patterned substrate, it is surrounded on each unit figure of whole figure substrate, can
With more effectively improving extraction efficiency.
Embodiment 1
As shown in figure 8, the chamber pressure of MOCVD device is evacuated to into 50Torr, temperature rises to 1000 DEG C, first pre- logical TMAl
Source（Time is 5s）, one layer of Al atom is overlay in patterned substrate；It is taken up in order of priority again and is passed through TMIn sources/Cp2Mg sources（Time is
5s/5s）, In/Mg as surface mobility reinforcing agent can REINFORCED Al atom surface mobility and epitaxial lateral overgrowth speed, Ran Houtong
Enter NH3Gas（Time is 5s）Carry out Nization process, growing AIN nucleating layer；Finally, then simultaneously it is passed through TMAl/NH3Gas（Time is
5s）, growing AIN cushion；So with each cycle（Time is 25s）Growth is circulated, until the thickness of growing AIN cushion
Spend for 2 μm.Relative to In is used alone as surfactant, using In/Mg as surface mobility reinforcing agent, can be more effectively
Ground lifts the surface mobility of Al atoms, beneficial to the AlN cushions that acquisition is smooth.
Grow after the AlN cushions of 2 μm of thickness by above-mentioned processing step, as shown in figure 1, further extension III-V
Group-III nitride, that is, form III-V nitride layer 30, and III-V nitride includes AlN, GaN, AlxGa1-xN、AlxIn1-xN、
InyGa1-yN or (AlxGa1-x)1-yInyThe single or multiple lift structure such as N, wherein 0<x<1,0<y<1.Obtained using present invention growth
The epitaxial structure of III-V nitride, is particularly suitable for making AlGaN base deep-UV light-emitting diodes.
Embodiment 2
As shown in figure 9, as different from Example 1, the In/Mg surface mobilities reinforcing agent of the present embodiment is to be taken up in order of priority
It is passed through Cp2Mg sources and TMIn sources to obtain, the time is respectively 5s.
Embodiment 3
As shown in Figure 10, as different from Example 1, the In/Mg surface mobilities reinforcing agent of the present embodiment is same respectively
When be continuously passed through Cp2Mg sources and TMIn sources and obtain, the time is 10s.
Embodiment 4
As shown in figure 11, as different from Example 1, the In/Mg surface mobilities reinforcing agent of the present embodiment is same respectively
When gradual change be passed through Cp2Mg sources and TMIn sources and obtain, gradual change is passed through mode and rises gradual change again for first gradual change and declines.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case of without departing from the spirit and scope of the present invention, various modifications and variation, therefore all equivalents can be made to the present invention
Technical scheme fall within scope of the invention, the scope of patent protection of the present invention should be limited regarding Claims scope.
Claims (10)
1. a kind of epitaxial structure of III-V nitride, including：Patterned substrate, the AlN bufferings on patterned substrate
Layer and the III-V nitride layer on AlN cushions, it is characterised in that：The inclined-plane and top of the patterned substrate
Without Al atomic depositions, the AlN cushions have a fabric in portion, and the fabric fills patterned substrate bottom, but
The inclined-plane and top of patterned substrate are not formed at, air lamellar spacing is formed between fabric and patterned substrate side, and
The upper surface of AlN cushions still keeps substantially flat, for improving the epitaxial quality of III-V nitride layer, reduces lattice and lacks
Fall into, improving extraction efficiency.
2. the epitaxial structure of a kind of III-V nitride according to claim 1, it is characterised in that：The AlN cushions
Thickness be 0.5 ~ 5 μm.
3. the epitaxial structure of a kind of III-V nitride according to claim 1, it is characterised in that：The fabric
Thickness be not less than the height of patterned substrate.
4. the epitaxial structure of a kind of III-V nitride according to claim 1, it is characterised in that：The graphical lining
Bottom material is sapphire, silicon, carborundum or gallium nitride.
5. the epitaxial structure of a kind of III-V nitride according to claim 1, it is characterised in that：The iii-v nitrogen
Compound layer is AlN, GaN, AlxGa1-xN、AlxIn1-xN、InyGa1-yN or (AlxGa1-x)1-yInyN single or multiple lift structures, wherein 0
<x<1,0<y<1.
6. a kind of growing method of III-V nitride epitaxial structure, including step：One patterned substrate is provided；In the figure
The fabric of shape Grown AlN cushions, its growth course is gradually covered to figure from the bottom of patterned substrate
Change the top of substrate so that fabric upper surface tends to smooth, due to two-dimentional lateral growth, bends can partial dislocation,
While epitaxial lateral overgrowth, the more difficult side in patterned substrate of AlN cushions carries out nucleation and growth, so as in the bottom
Air lamellar spacing is formed between structure and patterned substrate side；The continued growth AlN cushions on the fabric, until
Upper surface is substantially flat；III-V nitride layer is grown on the substantially flat AlN cushions, so as to improve iii-v
The epitaxial quality of nitride layer, reduces lattice defect, improving extraction efficiency.
7. the growing method of a kind of III-V nitride epitaxial structure according to claim 6, it is characterised in that：It is described
The further comprising the steps of formation of fabric of AlN cushions：
（1）TMAl sources are passed through in advance, one layer of Al atom is deposited, and because Al atomic mobilitys are relatively low, are covered in graphical lining randomness
Each position at bottom；
（2）TMIn sources and Cp2Mg sources are passed through, using In/Mg as surface mobility reinforcing agent, the surface mobility of REINFORCED Al atom
With epitaxial lateral overgrowth speed so that Al atoms are gradually migrated and assembled to the bottom of the patterned substrate of minimum energy；
（3）It is passed through NH3Carry out nitrogen treatment, growing AIN nucleating layer；
（4）It is passed through TMAl/NH3Gas, continued growth AlN thin layers make AlN thin film carry out epitaxial lateral overgrowth, because of the longitudinal growth of AlN
Speed is higher than lateral growth speed, and lateral growth speed is slower, after AlN merges above patterned substrate, AlN not with graphically
The inclined-plane of substrate merges, so as to air lamellar spacing in an inverted cone；
（5）With above-mentioned（1）~（4）As cycle, cycling deposition, up deposit from patterned substrate bottom, until epitaxial lateral overgrowth is extremely
Patterned substrate top above position carries out the merging of AlN cushions so that fabric upper surface tends to smooth.
8. the growing method of a kind of III-V nitride epitaxial structure according to claim 7, it is characterised in that：It is described
The growth temperature of the fabric of AlN cushions is 850 ~ 1150 DEG C.
9. the growing method of a kind of III-V nitride epitaxial structure according to claim 7, it is characterised in that：It is described
Step（2）In TMIn sources and Cp2Mg sources be passed through mode and be passed through or gradual change is passed through to be continuously passed through or being interrupted.
10. the growing method of a kind of III-V nitride epitaxial structure according to claim 7, it is characterised in that：It is described
Step（5）Middle cycle growth thickness is 1 ~ 5nm, and the cycling deposition cycle is 200 ~ 2000.
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| CN106350783B (en) * | 2016-08-31 | 2019-01-15 | 北京大学 | A kind of method and AlGaN film preparing low-dislocation-density AlGaN film based on MOCVD epitaxial lateral overgrowth |
| CN106252211A (en) * | 2016-09-21 | 2016-12-21 | 中山大学 | A kind of preparation method of AlN epitaxial layer |
| CN106653963B (en) * | 2017-02-14 | 2018-08-31 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial slice and production method |
| CN107170855B (en) * | 2017-04-01 | 2020-04-07 | 华灿光电(苏州）有限公司 | Manufacturing method of light-emitting diode epitaxial wafer |
| CN108878611B (en) * | 2018-07-04 | 2019-11-01 | 广东省半导体产业技术研究院 | A kind of semiconductor extension structure production method |
| CN109920727B (en) * | 2019-03-13 | 2021-04-02 | 中国科学院半导体研究所 | Method for self-aligning forming pattern on lateral epitaxial film and preparing epitaxial material |
| CN111682092B (en) * | 2020-05-18 | 2022-08-09 | 福建中晶科技有限公司 | Preparation method of graphical sapphire substrate |
| CN112736128A (en) * | 2020-12-31 | 2021-04-30 | 晶能光电（江西）有限公司 | GaN-based HEMT epitaxial structure and preparation method thereof |
| CN113097057A (en) * | 2021-03-31 | 2021-07-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Epitaxial growth method, epitaxial structure and photoelectric device |
| CN113628955A (en) * | 2021-06-18 | 2021-11-09 | 中国电子科技集团公司第十三研究所 | Substrate pretreatment method for nitride epitaxial material and epitaxial material |
| CN114725256B (en) * | 2022-06-09 | 2022-09-16 | 江西兆驰半导体有限公司 | III-nitride epitaxial structure and preparation method thereof |
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