CN104485385A - Preparation method for transparent graphene membrane electrode of solar cell - Google Patents
Preparation method for transparent graphene membrane electrode of solar cell Download PDFInfo
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- CN104485385A CN104485385A CN201410670776.4A CN201410670776A CN104485385A CN 104485385 A CN104485385 A CN 104485385A CN 201410670776 A CN201410670776 A CN 201410670776A CN 104485385 A CN104485385 A CN 104485385A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 74
- 239000012528 membrane Substances 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000084 colloidal system Substances 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims abstract description 8
- 239000011888 foil Substances 0.000 claims abstract description 8
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000007766 curtain coating Methods 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 238000004528 spin coating Methods 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000004215 Carbon black (E152) Substances 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000001273 butane Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000002834 transmittance Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 14
- 239000003054 catalyst Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method for a transparent graphene membrane electrode of a solar cell. The preparation method comprises the following steps: (1) putting a spiral or S-shaped quartz tank in which metal foil is contained in a reactor, and introducing hydrogen and heating to obtain a graphene membrane on the metal foil; (2) coating the graphene membrane with organic colloid through spin coating or spray coating or curtain coating or directly dropping the organic colloid onto the graphene membrane to obtain an organic colloid/ graphene/metal foil combined body; (3) soaking the product obtained in the step (2) in metal foil corrosive liquid to obtain an organic colloid/ graphene combined body; (4) taking the product in the step (3) out of the metal foil corrosive liquid by a substrate to obtain an organic colloid/ graphene/substrate combined body; (5) putting the product in the step (4) in degumming solvent, and taking out and putting in FeCl3 solution; (6) transferring the graphene membrane soaked in the FeCl3 solution to a base. According to the method disclosed by the invention, the obtained product has big area which can reach tens of inches, and is high in electrical conductivity; the resistance value reaches 30-60Ohm, and the light transmittance reaches up to 90-96 percent.
Description
Technical field
The present invention relates to a kind of preparation method of electrode material, particularly relate to a kind of preparation method of solar cell transparent graphene membrane electrode.
Background technology
At present, the transparent electrode material generally used is tin indium oxide (ITO) transparent conductive film, its light transmittance reaches 90%, but because phosphide element in material is rare precious metal, and the growth needs condition of high vacuum degree of ito thin film and higher temperature, the ito thin film simultaneously obtained is more crisp, not easily makes flexible electrode.
In recent years, the Graphene of discovery is the carbonaceous new material of a kind of monolayer carbon atom tightly packed one-tenth bi-dimensional cellular shape structure, and its conductance can match in excellence or beauty with ITO, and light transmittance can reach 97%, and production cost is lower, does not need high temperature, high pressure.The preparation method of the graphite film studied mainly contains micromechanics stripping method, liquid chemical method, pyrolysis SiC method and chemical vapour deposition technique etc.Wherein, micromechanics stripping method, liquid chemical method gained graphene film area are little, and about tens of square micron, is difficult to be applied in transparency electrode.Pyrolysis SiC method cost high and due to SiC corrosion-resistant, make the graphene film of acquisition be difficult to transfer, be thus more difficultly applied to transparency electrode field.Chinese patent CN101285175A discloses a kind of method of process for preparing graphenes by chemical vapour deposition film, its step comprises puts into anoxic reactor by the substrate with catalyst, underlayer temperature is made to reach 500 ~ 1200 DEG C, then in reactor, carbonaceous material is passed into, obtain Graphene, finally carry out purification process, removing catalyst.Wherein, catalyst is metal or metallic compound, and carbonaceous material is one in carbon monoxide, methane, acetylene, ethanol, benzene, toluene, cyclohexane and phthalocyanine or its combination in any.
Substrate with catalyst in this method can obtain by two kinds of formulas, and metal dust or metal compound powders are placed on substrate by the first; It two is metal or metallic compound are attached on substrate by chemical vapour deposition technique, physical vaporous deposition, vacuum thermal evaporation, magnetron sputtering method, plasma enhanced chemical vapor deposition method and print process.Adopt the catalyst fines particle on the former mode gained substrate little, the Graphene area that it is formed is little, and the mode be difficult to by adhering to organic colloid realizes the transfer of graphene film.Adopt the catalyst crystal grain on the latter's mode gained substrate little, of poor quality, the graphene film that it is formed is of poor quality, and main formation multi-layer graphene film, be difficult to form individual layer high-quality graphene film.And due to the restriction by sizes of substrate and CVD space reactor size, make the graphene film area of generation little, thus greatly placed restrictions on the application of Graphene.
Summary of the invention
The technical problem to be solved in the present invention is: overcome the deficiency in prior art, a kind of emitters on back side heterojunction solar cell and preparation method are provided, when emitter is thicker, both battery Built-in potential had been increased, avoid again emitter to the too much absorption of light, improve the open circuit voltage of battery, effectively improve cell integrated performance.
The object of the invention is to overcome above-mentioned shortcoming, provide a kind of simple to operate, be easy to control, cost is low, and products obtained therefrom area is large, conductance is high, the preparation method of the solar cell transparent graphene membrane electrode that light transmittance is high.
Overlarge area of the present invention is as follows from its step of preparation method of quality graphene membrane electrode:
1) spiral type or S type quartz cell that are placed with tinsel are placed in reactor, pass into hydrogen 1 ~ 1000Pa, be heated to 700 ~ 1000 DEG C, be incubated 0 ~ 60 minute, and then pass into hydrocarbon gas 0.1 ~ 100000Pa, then be incubated 1 ~ 60 minute, be cooled to room temperature with the speed of 5 ~ 100 DEG C/min afterwards, close hydrogen and hydrocarbon gas, tinsel obtains graphene film.Wherein, tinsel is the one in copper foil, nickel foil sheet, iron foil sheet, cobalt paillon foil, and its thickness is generally 20 ~ 100 microns; Hydrocarbon gas is one or more arbitrary proportion mixtures in methane, ethane, propane, butane, methyl alcohol, ethanol.
2) on graphene film by spin coating or spraying or curtain coating or directly drip organic colloid, dry 1 ~ 20 minute at 80 ~ 180 DEG C of temperature, obtain organic colloid/Graphene/tinsel combination.Wherein, organic colloid is the one in photoresist, electronics etching glue (PMMA), polyimides.
3) by step 2) products therefrom impregnated in tinsel corrosive liquid, and removing tinsel, obtains organic colloid/Graphene combination.Wherein, tinsel corrosive liquid is the corrosive liquid of solubilized this kind of tinsel, and its concentration is 10 ~ 40% aqueous solution by mass%.
4) with substrate by step 3) product takes out from tinsel corrosive liquid, puts into deionized water, cleaning is placed on substrate, dries 1 ~ 20 minute, obtain organic colloid/Graphene/substrate combination at 80 ~ 180 DEG C of temperature.Wherein, substrate is the one in transparent plastic sheet, sheet glass, printing paper, silicon chip, titanium dioxide silicon chip.
5) by step 4) products therefrom puts into one or more arbitrary proportion mixtures of solvent acetone of removing photoresist, ethanol, isopropyl alcohol, and removing organic colloid, takes out and puts into FeCl3 solution.
6) graphene film be immersed in FeCl3 solution is transferred to comprise transparent insulating substrate, stack gradually on transparent insulating substrate in the substrate of the transparent anode electrode layer of formation, photosensitive layer.
In order to reduce the resistivity of graphene membrane electrode, repeatedly can shift, forming the graphene membrane electrode of Multi-layer Parallel structure.Its concrete grammar is by step 5) products therefrom repeats step 4) and step 5) operation 1 ~ 5 time, just can obtain being attached to 2 ~ 6 layer graphene films on substrate, thus obtain the solar cell transparent graphene membrane electrode being attached to on-chip Multi-layer Parallel structure.
The advantage of the preparation method of solar cell transparent graphene membrane electrode of the present invention is simple to operate, and easy to control, cost is low.
Owing to adopting tinsel to make catalyst, the size of tinsel own is unrestricted, and is placed in spiral type or S type quartz cell, thus can obtain the graphene membrane electrode of overlarge area in measured response device space; On the other hand, adopt step 2) can shift in large-area graphene film to any substrate, and do not damage graphene film; Moreover, adopt and repeatedly shift the solar cell transparent graphene membrane electrode that graphene film can obtain Multi-layer Parallel structure.The inventive method products obtained therefrom area is large, and can reach tens of inch, conductivity is high, and resistance value reaches 30 ~ 60 ohm.Light transmittance is up to 90 ~ 96%.Make the application of graphene membrane electrode on semiconductor applications especially solar cell transparent graphene membrane electrode more extensive.
Embodiment
The invention provides a kind of simple to operate, be easy to control, cost is low, and products obtained therefrom area is large, conductance is high, the preparation method of the solar cell transparent graphene membrane electrode that light transmittance is high.
Overlarge area of the present invention is as follows from its step of preparation method of quality graphene membrane electrode:
1) spiral type or S type quartz cell that are placed with tinsel are placed in reactor, pass into hydrogen 1 ~ 1000Pa, be heated to 700 ~ 1000 DEG C, be incubated 0 ~ 60 minute, and then pass into hydrocarbon gas 0.1 ~ 100000Pa, then be incubated 1 ~ 60 minute, be cooled to room temperature with the speed of 5 ~ 100 DEG C/min afterwards, close hydrogen and hydrocarbon gas, tinsel obtains graphene film.Wherein, tinsel is the one in copper foil, nickel foil sheet, iron foil sheet, cobalt paillon foil, and its thickness is generally 20 ~ 100 microns; Hydrocarbon gas is one or more arbitrary proportion mixtures in methane, ethane, propane, butane, methyl alcohol, ethanol;
2) on graphene film by spin coating or spraying or curtain coating or directly drip organic colloid, dry 1 ~ 20 minute at 80 ~ 180 DEG C of temperature, obtain organic colloid/Graphene/tinsel combination.Wherein, organic colloid is the one in photoresist, electronics etching glue (PMMA), polyimides;
3) by step 2) products therefrom impregnated in tinsel corrosive liquid, and removing tinsel, obtains organic colloid/Graphene combination.Wherein, tinsel corrosive liquid is the corrosive liquid of solubilized this kind of tinsel, and its concentration is 10 ~ 40% aqueous solution by mass%;
4) with substrate by step 3) product takes out from tinsel corrosive liquid, puts into deionized water, cleaning is placed on substrate, dries 1 ~ 20 minute, obtain organic colloid/Graphene/substrate combination at 80 ~ 180 DEG C of temperature.Wherein, substrate is the one in transparent plastic sheet, sheet glass, printing paper, silicon chip, titanium dioxide silicon chip;
5) by step 4) products therefrom puts into one or more arbitrary proportion mixtures of solvent acetone of removing photoresist, ethanol, isopropyl alcohol, and removing organic colloid, takes out and puts into FeCl3 solution;
6) graphene film be immersed in FeCl3 solution is transferred to comprise transparent insulating substrate, stack gradually on transparent insulating substrate in the substrate of the transparent anode electrode layer of formation, photosensitive layer.
In order to reduce the resistivity of graphene membrane electrode, repeatedly can shift, forming the graphene membrane electrode of Multi-layer Parallel structure.Its concrete grammar is by step 5) products therefrom repeats step 4) and step 5) operation 1 ~ 5 time, just can obtain being attached to 2 ~ 6 layer graphene films on substrate, thus obtain the solar cell transparent graphene membrane electrode being attached to on-chip Multi-layer Parallel structure.
The advantage of the preparation method of solar cell transparent graphene membrane electrode of the present invention is simple to operate, and easy to control, cost is low.
Owing to adopting tinsel to make catalyst, the size of tinsel own is unrestricted, and is placed in spiral type or S type quartz cell, thus can obtain the graphene membrane electrode of overlarge area in measured response device space; On the other hand, adopt step 2) can shift in large-area graphene film to any substrate, and do not damage graphene film; Moreover, adopt and repeatedly shift the solar cell transparent graphene membrane electrode that graphene film can obtain Multi-layer Parallel structure.The inventive method products obtained therefrom area is large, and can reach tens of inch, conductivity is high, and resistance value reaches 30 ~ 60 ohm.Light transmittance is up to 90 ~ 96%.Make the application of graphene membrane electrode on semiconductor applications especially solar cell transparent graphene membrane electrode more extensive.
Claims (5)
1. a preparation method for solar cell transparent graphene membrane electrode, is characterized in that, comprises step as follows:
1) spiral type or S type quartz cell that are placed with tinsel are placed in reactor, pass into hydrogen 1 ~ 1000Pa, be heated to 700 ~ 1000 DEG C, be incubated 0 ~ 60 minute, and then pass into hydrocarbon gas 0.1 ~ 100000Pa, then be incubated 1 ~ 60 minute, be cooled to room temperature with the speed of 5 ~ 100 DEG C/min afterwards, close hydrogen and hydrocarbon gas, tinsel obtains graphene film;
2) on graphene film by spin coating or spraying or curtain coating or directly drip organic colloid, dry 1 ~ 20 minute at 80 ~ 180 DEG C of temperature, obtain organic colloid/Graphene/tinsel combination;
3) by step 2) products therefrom impregnated in tinsel corrosive liquid, and removing tinsel, obtains organic colloid/Graphene combination;
4) with substrate by step 3) product takes out from tinsel corrosive liquid, puts into deionized water, cleaning is placed on substrate, dries 1 ~ 20 minute, obtain organic colloid/Graphene/substrate combination at 80 ~ 180 DEG C of temperature;
5) by step 4) products therefrom put into solvent acetone of removing photoresist, ethanol, isopropyl alcohol one or more, removing organic colloid, take out put into FeCl3 solution;
6) graphene film be immersed in FeCl3 solution is transferred to comprise transparent insulating substrate, stack gradually on transparent insulating substrate in the substrate of the transparent anode electrode layer of formation, photosensitive layer.
2. the preparation method of solar cell transparent graphene membrane electrode as claimed in claim 1, is characterized in that tinsel is the one in copper foil, nickel foil sheet, iron foil sheet, cobalt paillon foil.
3. the preparation method of solar cell transparent graphene membrane electrode as claimed in claim 1, is characterized in that hydrocarbon gas is one or more in methane, ethane, propane, butane, methyl alcohol, ethanol.
4. the preparation method of solar cell transparent graphene membrane electrode as claimed in claim 1, is characterized in that organic colloid is the one in photoresist, electronics etching glue, polyimides.
5. the preparation method of solar cell transparent graphene membrane electrode as claimed in claim 1, is characterized in that the concentration of tinsel corrosive liquid is 10 ~ 40% aqueous solution by mass%.
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| CN201410670776.4A CN104485385A (en) | 2014-11-21 | 2014-11-21 | Preparation method for transparent graphene membrane electrode of solar cell |
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| CN201410670776.4A CN104485385A (en) | 2014-11-21 | 2014-11-21 | Preparation method for transparent graphene membrane electrode of solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226185A (en) * | 2015-08-25 | 2016-01-06 | 哈尔滨工业大学 | A kind of preparation method with the non-oxidation indium tin polymer solar battery of shape memory effect |
| CN106531820A (en) * | 2016-09-14 | 2017-03-22 | 中国电子科技集团公司第四十八研究所 | Preparation method of graphene electrode suitable for HIT cell, graphene electrode and HIT cell |
| CN107221577A (en) * | 2017-05-27 | 2017-09-29 | 合肥工业大学 | A kind of preparation method of the large area flexible imaging sensor based on ZnSe films/graphene hetero-junctions |
| CN112885908A (en) * | 2021-01-27 | 2021-06-01 | 重庆神华薄膜太阳能科技有限公司 | Double-sided light-transmitting flexible thin-film solar cell and preparation method thereof |
Citations (5)
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| CN105226185A (en) * | 2015-08-25 | 2016-01-06 | 哈尔滨工业大学 | A kind of preparation method with the non-oxidation indium tin polymer solar battery of shape memory effect |
| CN106531820A (en) * | 2016-09-14 | 2017-03-22 | 中国电子科技集团公司第四十八研究所 | Preparation method of graphene electrode suitable for HIT cell, graphene electrode and HIT cell |
| CN107221577A (en) * | 2017-05-27 | 2017-09-29 | 合肥工业大学 | A kind of preparation method of the large area flexible imaging sensor based on ZnSe films/graphene hetero-junctions |
| CN112885908A (en) * | 2021-01-27 | 2021-06-01 | 重庆神华薄膜太阳能科技有限公司 | Double-sided light-transmitting flexible thin-film solar cell and preparation method thereof |
| CN112885908B (en) * | 2021-01-27 | 2023-04-07 | 重庆神华薄膜太阳能科技有限公司 | Double-sided light-transmitting flexible thin-film solar cell and preparation method thereof |
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