CN104485366A - Metal electrode for solar cell - Google Patents
Metal electrode for solar cell Download PDFInfo
- Publication number
- CN104485366A CN104485366A CN201410721033.5A CN201410721033A CN104485366A CN 104485366 A CN104485366 A CN 104485366A CN 201410721033 A CN201410721033 A CN 201410721033A CN 104485366 A CN104485366 A CN 104485366A
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- CN
- China
- Prior art keywords
- metal electrode
- solar cell
- solar
- electrode
- battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 53
- 210000004027 cell Anatomy 0.000 claims description 16
- 239000006117 anti-reflective coating Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 230000003667 anti-reflective effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000013083 solar photovoltaic technology Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002110 nanocone Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a metal electrode for a solar cell, which is formed on the surface of a concentrating solar cell or other solar cells needing to be coated with an antireflection film, wherein the characteristic dimension of the metal electrode formed on the surface of the solar cell is equal to or less than the wavelength of light needing to be subjected to antireflection, so that a mixed excitation state formed by mutual coupling of metal surface plasmons and photons is generated on the surface of the electrode, and the antireflection of specific wavelength light is completed. According to the invention, the light anti-reflection effect is obviously improved through the surface plasmon effect, so that the photoelectric conversion efficiency of the solar cell is integrally improved.
Description
Technical field
The present invention relates to the technical field of solar cell, refer in particular to a kind of metal electrode used for solar batteries.
Background technology
The regenerative resources such as wind energy, water energy, underground heat, tide and solar energy become one of material technical field of most in 21 century development of world economy.And solar energy, regenerative resource novel, clean as one in regenerative resource, its utilization has two aspects: one is that solar energy is changed into heat energy, namely another kind is utilize the photovoltaic effect of semiconductor to develop solar cell to change into electric energy, also known as solar-photovoltaic technology, in solar-photovoltaic technology, the classifications such as the film concentrator cell of three or five race's materials and crystal silicon battery, in order to improve the solar energy conversion efficiency on basic structural materials as far as possible, all can cover one deck antireflective coating at battery surface, for absorbing sunlight as much as possible.Antireflective coating mostly is deielectric-coating, and according to the theory of antireflective film, for the antireflective film of certain films system, the wave band that can play anti-reflective effect is often limited, in order to increase antireflective wave band as far as possible.New technology path mainly contains the nano structural material preparing low-refraction and comprises SiO
2, TiO
2nanometer rods (as shown in Figure 3), the SiNx nanocone of moth ocular structure, nano wire (as shown in Figure 4), and the light trapping structure (as shown in Figure 5) that metal plasmons is formed.All these new technology paths are all consider its simple function as antireflective film and realize.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and shortcoming, the situation of the antireflective wave band limited for conventional antireflective film and above-mentioned various technical strategies, there is provided a kind of and can significantly improve concentrating solar battery or other needs to apply the metal electrode of solar battery efficiency of antireflective coating, this metal electrode, by surface plasma excimer effect, significantly improves light antireflective effect.
For achieving the above object, technical scheme provided by the present invention is: a kind of metal electrode used for solar batteries, described metal electrode is formed at concentrating solar battery or other needs to apply the surface of solar cell of antireflective coating, the characteristic size of the metal electrode that described solar cell surface is formed is equal to or less than and needs antireflecting optical wavelength, to intercouple the mixed activation state formed to produce metal surface plasma body excimer and photon at electrode surface, complete special wavelength light with this anti-reflection.
The duty ratio of described metal electrode is 4% ~ 6%.
Described metal electrode has an electric current assembling area, all photogenerated currents produced for guiding battery.
Described metal electrode is comb metal electrode, include many grid lines uniformly at intervals, every bar grid line is provided with multiple circular protrusions uniformly at intervals along respective length direction, circular protrusions between adjacent grid line can just to can also cross complementary, meanwhile, this comb metal electrode also needs the gate line electrode duty ratio that maintenance is mated with respective battery structure.
Described concentrating solar battery or other need to apply unijunction, binode and the multijunction cell that the solar cell of antireflective coating is three or five race's materials, or for needing the silicon materials battery applying antireflective coating.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
This metal electrode is keeping playing the effect of converging electric current in the duty ratio situation be applicable on the one hand, on the one hand, its minimum feature size is equal to or less than and needs antireflecting optical wavelength, with the mixed activation state formed that intercouples at electrode surface generation metal surface plasma body excimer and photon, complete special wavelength light with this anti-reflection, thus the overall photoelectric conversion efficiency improving solar cell.
Accompanying drawing explanation
Fig. 1 is the axonometric drawing of metal electrode of the present invention.
Fig. 2 is the vertical view of metal electrode of the present invention.
Fig. 3 is TiO in background technology
2nanometer rods schematic diagram.
Fig. 4 is the nano wire schematic diagram of moth ocular structure in background technology.
Fig. 5 is the light trapping structure schematic diagram that in background technology, metal plasmons is formed.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Metal electrode used for solar batteries of the present invention is formed at concentrating solar battery or other needs to apply the surface of solar cell of antireflective coating, the particularity of this kind of metal electrode is embodied in, its minimum feature size is equal to or less than and needs antireflecting optical wavelength, with the mixed activation state formed that intercouples at electrode surface generation metal surface plasma body excimer and photon, complete special wavelength light with this anti-reflection, thus the overall photoelectric conversion efficiency improving solar cell.
The duty ratio of described metal electrode still keeps the optimization duty ratio of the ordinary electrode under respective battery structure, and be generally 4% ~ 6%, this metal electrode has an electric current assembling area, all photogenerated currents produced for guiding battery.
The figure of described metal electrode can for covering any geometric figure of solar cell surface, and this electrode material is the metal electrode that semiconductor technology is commonly used.
The depositional mode of described metal electrode includes thermal evaporation, electron beam evaporation, magnetron sputtering and plating.Corresponding figure generation type comprises the photoetching process corresponding with characteristic size such as electron beam lithography, common photoetching.
Described concentrating solar battery or other need to apply any unijunction, binode and the multijunction cell that the solar cell of antireflective coating is three or five race's materials, or for needing the various form silicon materials batteries applying antireflective coating.
Below we by reference to the accompanying drawings 1 and accompanying drawing 2, illustrate metal electrode of the present invention, its situation is as follows:
As depicted in figs. 1 and 2, for being used for absorbing the GaAs single junction cell device of 600-800nm optical band, this battery is made up of emitter layer 1, base layer 2, back surface field layer 3 and substrate 4.The metal electrode that this battery surface is formed is comb metal electrode, electrode structure is processed before battery plated film, this comb metal electrode includes many grid lines uniformly at intervals, every bar grid line is provided with multiple circular protrusions 5 uniformly at intervals along respective length direction, circular protrusions between adjacent grid line can just to can also cross complementary, or other is any in order to produce the form that metal surface plasma body excimer and incident photon intercouple.The minimum feature size of the figure that this metal electrode is formed, for needing antireflecting optical wavelength or less, produces intercoupling of metal surface plasma body excimer and incident photon with this, thus reaches anti-reflection object.In addition, this comb electrode figure also needs the gate line electrode duty ratio keeping mating with this battery structure simultaneously, to reach the object not affecting other battery electrical characteristics.And in the present embodiment, this comb metal electrode optimum taking air ratio is 5.1%, in order to improve the anti-reflection of required wavelength, when keeping duty ratio constant, the minimum feature size of the circular protrusions 5 on this comb metal electrode is designed to diameter 600nm, due to intercoupling of metal surface plasma body excimer and incident photon can be produced, thus can improve the absorption of 600nm band of light, finally improve the photoelectric conversion efficiency of battery.
The examples of implementation of the above are only the preferred embodiment of the present invention, not limit practical range of the present invention with this, therefore the change that all shapes according to the present invention, principle are done, all should be encompassed in protection scope of the present invention.
Claims (4)
1. a metal electrode used for solar batteries, described metal electrode is formed at concentrating solar battery or other needs to apply the surface of solar cell of antireflective coating, it is characterized in that: the minimum feature size of the metal electrode that described solar cell surface is formed is equal to or less than the antireflecting optical wavelength of needs, to intercouple the mixed activation state formed to produce metal surface plasma body excimer and photon at electrode surface, complete special wavelength light with this anti-reflection.
2. one according to claim 1 metal electrode used for solar batteries, is characterized in that: the duty ratio of described metal electrode is 4% ~ 6%.
3. one according to claim 1 metal electrode used for solar batteries, is characterized in that: described metal electrode has an electric current assembling area, all photogenerated currents produced for guiding battery.
4. one according to claim 1 metal electrode used for solar batteries, it is characterized in that: described metal electrode is comb metal electrode, include many grid lines uniformly at intervals, every bar grid line is provided with multiple circular protrusions uniformly at intervals along respective length direction, circular protrusions between adjacent grid line can just to can also cross complementary, meanwhile, this comb metal electrode also needs the gate line electrode duty ratio that maintenance is mated with respective battery structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410721033.5A CN104485366A (en) | 2014-11-28 | 2014-11-28 | Metal electrode for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410721033.5A CN104485366A (en) | 2014-11-28 | 2014-11-28 | Metal electrode for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104485366A true CN104485366A (en) | 2015-04-01 |
Family
ID=52759892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410721033.5A Pending CN104485366A (en) | 2014-11-28 | 2014-11-28 | Metal electrode for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104485366A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779306A (en) * | 2015-04-21 | 2015-07-15 | 南京航空航天大学 | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100175749A1 (en) * | 2008-03-24 | 2010-07-15 | Tsutsumi Eishi | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
| US20100218815A1 (en) * | 2009-11-18 | 2010-09-02 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| CN202058734U (en) * | 2011-05-19 | 2011-11-30 | 北京京东方光电科技有限公司 | Film field effect transistor substrate and liquid crystal display panel |
| CN204332974U (en) * | 2014-11-28 | 2015-05-13 | 瑞德兴阳新能源技术有限公司 | Metal electrode for solar cell |
-
2014
- 2014-11-28 CN CN201410721033.5A patent/CN104485366A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100175749A1 (en) * | 2008-03-24 | 2010-07-15 | Tsutsumi Eishi | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
| US20100218815A1 (en) * | 2009-11-18 | 2010-09-02 | International Business Machines Corporation | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| CN202058734U (en) * | 2011-05-19 | 2011-11-30 | 北京京东方光电科技有限公司 | Film field effect transistor substrate and liquid crystal display panel |
| CN204332974U (en) * | 2014-11-28 | 2015-05-13 | 瑞德兴阳新能源技术有限公司 | Metal electrode for solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104779306A (en) * | 2015-04-21 | 2015-07-15 | 南京航空航天大学 | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
| CN104779306B (en) * | 2015-04-21 | 2017-02-01 | 南京航空航天大学 | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150401 |
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| WD01 | Invention patent application deemed withdrawn after publication |