CN104451596A - Composite material based on diamond crystals and preparation method of composite material - Google Patents
Composite material based on diamond crystals and preparation method of composite material Download PDFInfo
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- CN104451596A CN104451596A CN201410638045.1A CN201410638045A CN104451596A CN 104451596 A CN104451596 A CN 104451596A CN 201410638045 A CN201410638045 A CN 201410638045A CN 104451596 A CN104451596 A CN 104451596A
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- diamond
- barrier layer
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- matrix material
- diamond crystal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Abstract
The invention provides a preparation method of a composite material based on diamond crystals. The preparation method comprises the following steps: forming a barrier layer on the surface of a carbon nano tube and/or a carbon fiber; forming nucleation sites for guiding the diamond crystals to deposit on the barrier layer; and depositing a diamond coating on the barrier layer. By adopting the preparation method disclosed by the invention, high-quality diamond crystals can coat the barrier layer on the condition of not damaging carbon nanowires or carbon fibers, and very high binding force is formed between the diamond crystals and the carbon nanowires or the carbon fibers; meanwhile, the nucleation sites are used for guiding the diamond coating to deposit, so that the quality of the diamond coating is prevented from being lowered due to a secondary nucleation phenomenon.
Description
Technical field
The invention belongs to technical field of composite materials, be specifically related to a kind of matrix material based on diamond crystal and preparation method thereof.
Background technology
Carbon nanotube and carbon fibre material have a series of distinguished attribute, as physical strength is high, good-toughness and electroconductibility strong etc.On the other hand, well-known diamond has special physical properties, as high rigidity, is widely used in abrasion-resistant hardcoat, cutting and polishing tool.Although thin diamond film hardness is very high, toughness is low, has mechanical equivalent of light fragility.Carbon nanotube and/or carbon fiber and adamantine mixture are supplemented by mutual, realize being suitable for very much manufacturing to have excellent mechanical property, the material of electroconductibility and thermal characteristics simultaneously, therefore have very high use value.In composite materials, diamond-coated carbon nanotube and/or carbon fibre thread are from over-all properties, and production efficiency and cost all have very high use value.
And existingly prepare in the method for diamond coatings, normally utilize sedimentation chemistry vapour deposition (CVD), carry out under strong rich hydrogen plasma, temperature are higher than 700 DEG C of conditions, hydrogen promotes the formation of the SP3 hybrid bond of carbon as catalyzer, destroy the formation of SP2 hybrid bond.But this environment also can damage the carbon nanotube/carbon fiber being SP2 key equally, thus reduce the quality of carbon nanotube and/or carbon fiber.
The situation of above-mentioned deficiency is there is in order to make up traditional chemical Vapor deposition process preparation, the people such as M.Terranova (Chemistry of Materials 17.2005.3214) utilize hot-wire chemical gas-phase deposition (HFCVD) device, with iron be catalyst-coated on a silicon substrate, in argon atmosphere, go out carbon nanotube and diamond nanocrystalline with carbon nano-particles stream one-step synthesis, realize the growth of diamond nanocrystalline particle in carbon nanotube bundles.N.Shankar (Diamond Related Matter, 17.2008, PP.79 1,) etc. people first disperse multi-walled carbon nano-tubes on a silicon substrate, then use hot-wire chemical gas-phase deposition (HFCVD) device to make diamond deposition in this structure, successful growth has gone out carbon nanotube/diamond composite.They find under the exemplary deposition conditions of diamond film, i.e. 1% methane and 99% hydrogen, and carbon nanotube is destroyed.But increase methane flow to 2%-5%, namely reduce hydrogen portion corrasion, they find that carbon nanotube is not etched, and diamond can forming core and growth on the carbon nanotubes.But, reduce etching active meeting and negative effect is produced to the surface topography of diamond particles, its microlitic structure is made to become " cauliflower " pattern, i.e. the diamond particles of many nano-scales (100-400nm) random forming core on the carbon nanotubes, growth.
The diamond-coated carbon nanotube adopting aforesaid method to prepare and/or carbon fibre material, the quality of its carbon nanotube, adamantine quality or the two quality still can be impaired.In two work simultaneously done people such as people and Shankar such as Terranova, the diamond formed is the single crystal of minimum nanocrystalline composition, there is no the formation of microcrystalline diamond, and further recombination process can only carry out at a narrow parameter window, handiness in the matrix material of the dissimilar or structure of synthesis is very little, in the application still existing defects.
Summary of the invention
The object of the embodiment of the present invention is the above-mentioned deficiency overcoming prior art, thering is provided one can realize high-quality diamond crystal is attached on carbon nanotube or carbon fiber surface securely, can not damage again the carbon nano tube line and diamond crystal matrix material and preparation method thereof of quality simultaneously.
In order to realize foregoing invention object, the technical scheme of the embodiment of the present invention is as follows:
Based on a preparation method for the matrix material of diamond crystal, comprise the steps:
The surface of carbon nanotube and/or carbon fiber forms barrier layer;
Described barrier layer is formed the forming core site for guiding diamond crystal to deposit;
Deposition of diamond coatings on described barrier layer.
Adopt above-mentioned preparation method of the present invention, excellent diamonds crystal can be applied in the above when not destroying carbon nano wire or carbon fiber by barrier layer, and can make there is very high bonding force between diamond crystal and carbon nano wire or carbon fiber; Guided the deposition of diamond coatings by forming core site, the phenomenon preventing second nucleation causes the problem of the quality reducing adamantine coating simultaneously.
The present invention also protects the matrix material based on diamond crystal prepared according to the method described above further, and the micron order scroll saw prepared by this matrix material.
The above-mentioned matrix material based on diamond crystal that the present invention prepares, can realize high-quality diamond crystal is attached on carbon nanotube or carbon fiber surface securely, or the two formed structure on and don't carbon nanotube and carbon fiber can be damaged, quality is compared existing matrix material and is greatly promoted.The micron order scroll saw simultaneously prepared, compared with the diamond fretsaw manufactured with existing method, the wire saw diameters prepared in the present invention at 20 microns, and in existing way the diameter of scroll saw all more than 1 millimeter; Therefore the present invention not only reduces the manufacturing cost of scroll saw, simultaneously in application aspect, such as in the cutting of silicon chip, can realize cutting without sawdust, on average can save the silicon sheet material cost of about 1/3rd, greatly can reduce the cost of silicon-based devices material (as solar photovoltaic cell panel).
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing:
Fig. 1 is the composite material and preparation method thereof schematic diagram of the embodiment of the present invention based on diamond crystal;
Fig. 2 is metamorphosis schematic diagram diamond coatings preparing by embodiment of the present invention carbon nano pipe array.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The embodiment of the present invention provides a kind of composite material and preparation method thereof based on diamond crystal, as shown in Figure 1, comprises the steps:
S10, the surface of carbon nanotube and/or carbon fiber forms barrier layer;
S20, barrier layer is formed the forming core site for guiding diamond crystal to deposit;
S30, deposition of diamond coatings on barrier layer.
In aforesaid method of the present invention; first adopt in step S10 and first form a barrier layer on the surface of carbon nanotube and/or carbon fiber in the preparation process of matrix material; its objective is in follow-up adamantine deposition process, protection carbon nanotube and/or carbon fiber structural are not exposed for the reactive gas of formation needed for excellent diamonds and the impact of temperature.Wherein, the advantage of this measure is the CNT and the diamond film parameter that do not adopt compromise, the process condition of unrestricted choice diamond crystal deposition can obtain excellent diamonds crystal, and need not consider that required reactive gas atmosphere can produce damage carbon nanotube and/or the impact of carbon fiber structural.Meanwhile, barrier layer also can support diamond nucleation or have larger load transfer as between adhesion promoter permission diamond and carbon nanotube and/or carbon fiber.Therefore, the handiness in matrix material preparation process is greatly improved.
Wherein, based on above-mentioned requirements and condition, barrier layer is required to be the function that can realize protecting carbon nanotube and/or carbon fiber structural opposing mal-condition in diamond deposition process; Therefore the material of barrier layer is selected, and all can general knowledge adopt meeting under above-mentioned condition skilled person in theory.Further in the present invention, in order to ensure the qualities such as bonding strength, barrier layer adopts unbodied silica-based buffer film, and it is using tetramethylsilane and oxygen as precursor, is deposited the thin layer of several nano thickness obtained by jigger coupling PECVD process; Or barrier layer adopts one deck amorphous silicon oxide or silicon carbide, for the requirement of quality during performance and result of use can meet to greatest extent.Meanwhile, in order to reach required provide protection, requiring that barrier layer is coated on carbon nanotube and/or carbon fiber or in the structure of carbon nanotube and/or carbon fiber composite with minimum thickness, usually requiring that the thickness of this barrier layer is less than 100nm.For the quality of diamond deposition in implementation process, first-selected barrier layer thickness is less than 20nm, and the thickness be more preferably is less than 10nm or only only has a few nanometer.
Simultaneously, the formation of this barrier layer preferably adopts capacitance coupling plasma chemical Vapor deposition process to realize, under high frequency or DC electric field effect, source ionization of gas forms plasma body, utilize low-temperature plasma as energy source, pass into the reactant gases of appropriate barrier material, utilize plasma discharge, make the reactant gases of barrier material activate and realize chemical vapour deposition.Adopt the method can promote the chemical bond rupture of the reactant gas molecules of barrier material and reconfigure, generate active higher chemical group, strengthen associativity; Whole reaction system but keeps lower temperature simultaneously, avoids having an impact to carbon fiber/carbon nanotube.
Further after step slo, the forming core site formed on the surface of barrier layer for guiding diamond crystal to deposit is adopted in step S20, thus guide in the process of deposition in the promotion grain growing of initial forming core site, the phenomenon preventing second nucleation causes the quality reducing adamantine coating.
In this step S20, the forming core site of this guiding can simply adopt Nano diamond seed crystal to realize, and as guiding nucleus in deposition process, guides deposition and the growth of diamond coatings.Form the mode in this forming core site, in invention implementation process, the way that overbias can be adopted to strengthen nucleation is carried out, or the carbon nanotube and/or carbon fiber that are coated with silica-base film barrier layer are immersed in the ethanolic soln that left floating nano-diamond particles and use diamond seed in ultra sonic bath method kind, all can; Technician can select according to preparation condition and effect, does not limit at this.
Carry out the step of diamond deposition in final step S30, the barrier layer of carbon nanotube and/or carbon fiber forms diamond coatings.This process can adopt chemical vapour deposition, under the reactant gases atmosphere that the SP3 hybrid bond being conducive to carbon generates, the barrier layer on carbon nanotube/carbon fiber or carbon nanotube carbon fiber composite realizes deposition or the synthesis of diamond crystal; Or other coating technologies also can be adopted to carry out.
Further in the present invention in order to avoid coating step damage carbon nanotube and/or carbon fiber, plasma enhanced chemical vapor deposition (PECVD) is preferentially selected to realize the coating of carbon nanotube/carbon fiber or carbon nanotube/carbon fiber structural.Simultaneously in implementation process, more ensure that excellent diamonds crystal promotes grain growing in initial forming core site, and do not have second nucleation to occur.Utilize the hydrogen more than 98% to produce strong rich hydrogen plasma environment in the reactant gas atmosphere that plasma body is strengthened, finally can form one by the complete coated closed carbon nanotube of diamond particles and/or carbon fiber structural.Certainly, in order to avoid coating step damage carbon nanotube and/or carbon fiber, PECVD process should be carried out under low pressure, neutral temperature.
In the step with CVD diamond crystal on the carbon nanotube/carbon fiber of barrier layer or carbon nanotube/carbon fiber structural, preferentially can select microwave class chemical Vapor deposition process.In depositing high-quality diamond process, the reactant gases atmosphere selected may comprise any gaseous constituent being beneficial to diamond deposition, and should not comprise the gaseous constituent that can produce secondary nucleation.Such as, reactant gases comprises the hydrogen more than 98% and is less than the methane of 2%, avoids induction to produce secondary nucleation.In this process simultaneously, in order to realize obtaining excellent diamonds layer on carbon nanotube/carbon fiber or its structure, suitable temperature and pressure should be selected, according to barrier layer thickness in the invention process, and the quality control of required formation diamond body layer crystal crystal formation, preferred pressure is lower than 100hPa, and temperature is higher than 700 DEG C.
The above-mentioned identical object of the present invention is realized based on this, adopt condenser coupling PECVD process implementation at carbon nanotube and/or carbon fiber, or carbon nanotube and/or carbon fiber composite structure apply barrier layer, and follow-up adamantine building-up process employing is carried out in microwave CVD or HF CVD.
According to the needs in preparation composite material, implementation process, before step S10, can also comprise the steps:
S00, by carbon nanotube and/or the carbon fiber structure treatment according to the matrix material of required preparation, generates carbon nanotube and/or the carbon fiber structural of expection; Such as carbon nanotube is carried out the structural form that process forms carbon nano pipe array or carbon nano wire, or the structure that carbon nanotube is formed may be the arbitrary arrangement of such nanotube, comprising the carbon nanotube that sheet towers, the carbon nanotube spin coated membrane of disperseing on different substrates, carbon nano-tube network or carbon fibre thread etc.Certainly its Structure and form, can select according to the requirement of the matrix material of required preparation, not limit at this.
Adopt above-mentioned preparation method of the present invention, excellent diamonds crystal can be applied in the above when not destroying carbon nano wire or carbon fiber by barrier layer, and can make there is very high bonding force between diamond crystal and carbon nano wire or carbon fiber; Guided the deposition of diamond coatings by forming core site, the phenomenon preventing second nucleation causes the quality reducing adamantine coating simultaneously.
And adopt aforesaid method of the present invention to prepare, diamond coatings can be applicable to various carbon nanotube and/or carbon fiber structural, carbon nanotube, carbon nano-tube network and the carbon fibre thread of such as large stretch of arrangement.Which also provides and regulate carbon nanotube and/or the carbon fiber stratified composite in matrix material and research and development, and the handiness of volume proportion in thin, hard, wear-resisting coating of accomplishing scale production etc.
The micron order scroll saw that above-mentioned matrix material can also be prepared by the present invention further simultaneously.Wherein, the micron order scroll saw obtained can be replaced traditional scroll saw and be used for cutting silicon wafer; Rely on compared with the manufacture method of electroplating or inlaying and diamond crystal being connected to and diamond fretsaw preparing by metal wire or saw silk with existing, the wire saw diameters prepared in the present invention at 20 microns, and in existing way the diameter of scroll saw all more than 1 millimeter; Therefore the manufacturing cost not only reducing scroll saw that the present invention obtains, simultaneously in application aspect, such as in the cutting of silicon chip, can realize cutting without sawdust, on average can save the silicon sheet material cost of about 1/3rd, greatly can reduce the cost of silicon-based devices material (as solar photovoltaic cell panel).
Adopt the present invention's preparation can obtain equally distributed diamond wire, it has diversified use value, such as: 1. nanotube/carbon nano wire strengthens diamond and is used in superhard wear film coating; 2. the line of diamond-coated, is made up of at carbon nanotube and/or carbon fiber micron order diamond, can replace traditional replacement traditional inlay or electroplated diamond metal wire cutting unit stainless steel on diamond setting carry out cutting semiconductor material as silicon materials; 3. high-temperature high pressure sensor; 4. feds; 5. micromechanics and Application in Sensing; 6. flexible flexible diamond coatings; 7. the nano wire of silica-base film is covered based on carbon nanotube and/or carbon fiber.
For making clearly complete, the enforcement reference that is easy to those skilled in the art of the implementation detail of aforesaid method process of the present invention, and make outstanding progressive effect of the present invention more remarkable, by the following examples concrete example explanation is carried out to the enforcement of said process.
Embodiment 1
S00, generates expection carbon nano pipe array (as shown in Figure 2) to carbon nanotube process;
S10, passes through the way of condenser coupling PECVD under tetramethylsilane and Oxygen Condition at low pressures with at suitable temperature, carbon nanotube and/or carbon fiber structural covers silica-based thin barrier layer;
S20, is immersed in the carbon nanotube and/or carbon fiber that are coated with silica-base film buffer layer in the ethanolic soln that left floating nano-diamond particles by diamond seed in ultra sonic bath method kind;
S30, utilizes Microwave Plasma CVD Method, and under condition suitable in the reactor, (hydrogen of more than 98% and the methane that is less than 2% are at the pressure of 70hpa and 850 DEG C) prepares deposition of diamond coatings.
Fig. 2 illustrates the present embodiment to be prepared and carbon nano-array covers the signal of diamond process.The array of Single Carbon Nanotubes is placed on suitable substrate in fig. 2; Silica-base film barrier layer can ensure that the top of the carbon nanotube when diamond synthesis can not be destroyed; And finally form diamond coatings.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. based on a preparation method for the matrix material of diamond crystal, it is characterized in that, comprise the steps:
The surface of carbon nanotube and/or carbon fiber forms barrier layer;
Described barrier layer is formed the forming core site for guiding diamond crystal to deposit;
Deposition of diamond coatings on described barrier layer.
2., as claimed in claim 1 based on the preparation method of the matrix material of diamond crystal, it is characterized in that, described barrier layer is unbodied silica-based buffer film, amorphous silicon oxide or silicon carbide.
3., as claimed in claim 2 based on the preparation method of the matrix material of diamond crystal, it is characterized in that, the thickness of described barrier layer is less than 100nm.
4. the preparation method of the matrix material based on diamond crystal as described in any one of claims 1 to 3, is characterized in that, described forming core site is Nano diamond seed crystal.
5. as claimed in claim 4 based on the preparation method of the matrix material of diamond crystal, it is characterized in that, described barrier layer being formed in the forming core site step for guiding diamond crystal to deposit, adopting the method for bias enhanced nucleation or nano-diamond particles suspension excusing from death bath to generate forming core site.
6. the preparation method of the matrix material based on diamond crystal as described in any one of claims 1 to 3, is characterized in that, on described barrier layer in deposition of diamond coatings step, using plasma enhanced chemical vapor deposition prepares diamond coatings.
7., as claimed in claim 6 based on the preparation method of the matrix material of diamond crystal, it is characterized in that, in described plasma enhanced chemical vapor deposition process, the density of hydrogen of reactant gas atmosphere is greater than 98%;
And/or in described plasma enhanced chemical vapor deposition process, reaction pressure is lower than 100hPa, and temperature is higher than 700 DEG C.
8. the preparation method of the matrix material based on diamond crystal as described in any one of claims 1 to 3, it is characterized in that, the surface of described carbon nanotube and/or carbon fiber is formed in barrier layer step, adopts capacitance coupling plasma chemical Vapor deposition process to form described barrier layer.
9. the matrix material based on diamond crystal that the preparation method of the matrix material based on diamond crystal according to any one of claim 1 to 8 prepares.
10. one kind adopts the micron order scroll saw prepared based on the matrix material of diamond crystal according to claim 9.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107443602A (en) * | 2017-09-11 | 2017-12-08 | 湖南七纬科技有限公司 | A kind of high-performance diamond line and preparation method thereof |
CN110734726A (en) * | 2018-10-23 | 2020-01-31 | 嘉兴学院 | Preparation method of carbon nanotube/diamond composite heat-conducting adhesive material |
WO2020163909A1 (en) | 2019-02-11 | 2020-08-20 | The University Of Melbourne | A method of forming a diamond coating on a carbon material |
CN114606465A (en) * | 2022-01-27 | 2022-06-10 | 深圳富联智能制造产业创新中心有限公司 | Method for producing cutting wire and cutting wire |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013113493A1 (en) * | 2012-01-30 | 2013-08-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for the manufacture of composites consisting of carbon nanotubes and crystalline diamond |
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2014
- 2014-11-12 CN CN201410638045.1A patent/CN104451596A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013113493A1 (en) * | 2012-01-30 | 2013-08-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for the manufacture of composites consisting of carbon nanotubes and crystalline diamond |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107443602A (en) * | 2017-09-11 | 2017-12-08 | 湖南七纬科技有限公司 | A kind of high-performance diamond line and preparation method thereof |
CN107443602B (en) * | 2017-09-11 | 2019-04-19 | 秦皇岛星晟科技股份有限公司 | A kind of high-performance diamond line and preparation method thereof |
CN110734726A (en) * | 2018-10-23 | 2020-01-31 | 嘉兴学院 | Preparation method of carbon nanotube/diamond composite heat-conducting adhesive material |
CN110734726B (en) * | 2018-10-23 | 2021-10-29 | 嘉兴学院 | Preparation method of carbon nanotube/diamond composite heat-conducting adhesive material |
WO2020163909A1 (en) | 2019-02-11 | 2020-08-20 | The University Of Melbourne | A method of forming a diamond coating on a carbon material |
CN114606465A (en) * | 2022-01-27 | 2022-06-10 | 深圳富联智能制造产业创新中心有限公司 | Method for producing cutting wire and cutting wire |
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Application publication date: 20150325 |