CN104425695B - 发光二极管 - Google Patents

发光二极管 Download PDF

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Publication number
CN104425695B
CN104425695B CN201310394791.6A CN201310394791A CN104425695B CN 104425695 B CN104425695 B CN 104425695B CN 201310394791 A CN201310394791 A CN 201310394791A CN 104425695 B CN104425695 B CN 104425695B
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light
emitting diode
backlight unit
substrate
diode chip
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CN104425695A (zh
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张忠民
张简千琳
吴雅婷
杨政华
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN201310394791.6A priority Critical patent/CN104425695B/zh
Priority to TW102132690A priority patent/TWI521743B/zh
Priority to US14/474,797 priority patent/US9439280B2/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)

Abstract

一种发光二极管，包括具有电路结构的基板、至少一个发光二极管芯片和封装材料，发光二极管芯片设置于基板之上且与基板的电路结构电连接，封装材料设置在所述基板上并包覆发光二极管芯片。所述基板安装有发光二极管芯片的一面具有若干凹槽，凹槽设置于基板上未安装发光二极管芯片的区域，凹槽表面具有反光部。本发明所提供的发光二极管，在基板上设置有凹槽，由于凹槽的斜面与法线形成一夹角以改变“经过封装材料表面全反射后入射到凹槽斜面的光线”经由凹槽斜面的反光部的反射作用后的出射角度，从而使得此部分光线能从封装材料表面折射到封装材料外部，最终提高了整个发光二极管的光输出效率。

Description

发光二极管
技术领域
本发明涉及一种发光二极管，特别涉及一种集成封装的发光二极管。
背景技术
发光二极管作为一种新型的光源，目前已广泛应用于多种场合。多年来发光二极管的发展方向仍然致力于发光效率的提升上，发光效率的影响因素一般包括选用的发光二极管芯片材料、组件结构的设计、透明度及全反射现象等。
发光二极管中最重要的元件为发光二极管芯片，其决定了发光二极管的性能。现有技术中，通常在发光二极管芯片上包覆封装材料以进一步保护晶粒的各项特性，现有的封装材料的折射率大约为1.4-1.5，根据折射定律，例如，当折射率为1.5、入射角大于41度时，光线在空气与封装材料的界面发生全反射，再如，当折射率为1.4、入射角大于45度时，光线在空气与封装材料的界面发生全反射，这样导致一部分光容易被限制在封装材料内而经过多次反射被封装材料吸收损耗，造成发光二极管的出光效率低。
发明内容
本发明旨在提供一种发光二极管以克服上述缺陷。
一种发光二极管，包括具有电路结构的基板、至少一个发光二极管芯片和封装材料，发光二极管芯片设置于基板之上且与基板的电路结构电连接，封装材料设置在所述基板上并包覆发光二极管芯片。所述基板安装有发光二极管芯片的一面具有若干凹槽，凹槽设置于基板上未安装发光二极管芯片的区域，凹槽表面具有反光部。
本发明所提供的发光二极管，在基板上设置有凹槽，由于凹槽表面设置有反光部，反光部表面的法线与发光二极管芯片光轴形成一夹角以改变“经过封装材料表面全反射后入射到凹槽斜面的光线”经由反光部的反射作用后的出射角度，从而使得此部分光线能从封装材料表面折射到封装材料外部，最终提高了整个发光二极管的光输出效率。
附图说明
图1为本发明实施方式一中的发光二极管的剖面图。
图2为图1中的一种发光二极管的平面图。
图3为图1中的另一种发光二极管的平面图。
主要元件符号说明
基板 110
凹槽 111
中心凹槽 112
反光部 200
反光部表面 201
封装材料 120
封装材料表面 1201
发光二极管芯片 130
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图，对本发明作进一步的详细说明。
请参阅图1，本发明所提供的发光二极管包括具有电路结构的基板110、至少一个发光二极管芯片130和封装材料120。所述发光二极管芯片130设置于基板110之上并与基板110电连接。所述发光二极管芯片130与基板110的电路结构的电连接方式可采用打线连接方式或覆晶连接方式。所述基板110可选择PCB基板、陶瓷基板、金属基板或柔性基板等。所述封装材料120包覆发光二极管芯片130。所述封装材料120的折射率为1.4-1.5。所述封装材料120可包含荧光物质。
所述基板110安装有发光二极管芯片130的一面具有若干凹槽111，凹槽111设置于基板110上未安装发光二极管芯片130的区域，凹槽111表面具有反光部200。所述反光部200为金属材料，该材料可选用Al或Ag等。所述金属材质的反光部200一方面可以用于光线的反射，另一方面可以作为基板110的电路结构的一部分。
所述凹槽111的截面的轮廓呈“Ｖ”形，“V”形的斜边为所述凹槽111斜面的截面轮廓。所述反光部表面201的法线I-I与发光二极管芯片130的中心轴O-O之间的夹角θ小于90度。所述“V”形的斜边上与封装材料120表面1201距离较近的一端的端点A与发光二极管芯片130的中心轴O-O之间的距离D大于等于发光二极管芯片130宽度H的二分之一，也即D≥1/2H。在本实施例中，反光部200为上述金属材料的镀层，所述反光部表面201与“V”形凹槽111斜面平行。所述发光二极管芯片130发出的光线到达封装材料表面1201后，一部分在封装材料表面1201的入射角小于全反射临界角的光线经过封装材料表面1201折射出封装材料120，另一部分在封装材料表面1201的入射角大于全反射临界角的光线经过封装材料表面1201的全反射作用反射回封装材料120内部，而后经过基板110的反光部200的反射作用、再经过封装材料表面1201折射出封装材料120。通过凹槽斜边的设计，可以有效改变经过反光部表面201反射的光线在封装材料120表面1201的光线的入射角度以减少全反射现象的发生。
请参阅图2，所述凹槽111设置于发光二极管芯片130与发光二极管芯片130之间，呈现纵横交错的排布方式以增加发光二极管的光输出效率。
本发明所提供的发光二极管通过基板110上的反光部200对光线的反射作用，同时反光部表面201的法线I-I与发光二极管芯片130的光轴O-O具有一夹角θ以改变“经过封装材料表面1201全反射后入射到反光部表面201的光线”经由反光部表面201的反射作用后的出射角度，从而使得此部分光线能从封装材料表面1201折射到封装材料120外部，最终提高了整个发光二极管的光输出效率。
进一步地，请参阅图3，所述凹槽111也可设计为围绕在发光二极管芯片130聚集区域的周围，发光二极管芯片130聚集区域周围的凹槽111呈现纵横交错的排布方式。
优选的，可以在所述发光二极管芯片130的聚集区域中心设置中心凹槽112，以提高整个发光二极管10的光输出效率。所述中心凹槽112为一向基板110内部凹陷的圆锥体。
对于本领域的技术人员来说可以做本发明技术构思内做其他变化，但是，根据本发明的技术构思做出其它各种相应的改变与变形，都应属于本发明权利要求的保护范围。

Claims (8)

1.一种发光二极管，包括具有电路结构的基板、至少一个发光二极管芯片和封装材料，发光二极管芯片设置于基板之上且与基板的电路结构电连接，封装材料设置在所述基板上并包覆发光二极管芯片，其特征在于：所述基板安装有发光二极管芯片的一面具有若干凹槽，凹槽设置于基板上未安装发光二极管芯片的区域，凹槽表面具有反光部，所述凹槽的截面的轮廓呈“V”形，“V”形的斜边为所述凹槽斜面的截面轮廓，所述“V”形的斜边上与封装材料表面距离较近的一端的端点与发光二极管芯片的中心轴之间的距离大于等于发光二极管芯片宽度的二分之一，所述反光部围绕所述发光二极管芯片且与所述发光二极管芯片间隔设置。
2.如权利要求1所述的发光二极管，其特征在于：所述基板为PCB基板、陶瓷基板、金属基板或柔性基板。
3.如权利要求1所述的发光二极管，其特征在于：所述反光部为金属材质。
4.如权利要求1所述的发光二极管，其特征在于：所述凹槽的反光部表面的法线与发光二极管芯片的中心轴之间的夹角小于90度。
5.如权利要求1所述的发光二极管，其特征在于：所述发光二极管包含若干个发光二极管芯片，所述凹槽设置于发光二极管芯片与发光二极管芯片之间。
6.如权利要求1所述的发光二极管，其特征在于：所述发光二极管包含若干个发光二极管芯片，所述凹槽围绕发光二极管芯片聚集区域的周围。
7.如权利要求6所述的发光二极管，其特征在于：所述发光二极管芯片聚集区域中心包含中心凹槽。
8.如权利要求1所述的发光二极管，其特征在于：所述封装材料中填充有荧光物质。
CN201310394791.6A 2013-09-04 2013-09-04 发光二极管 Active CN104425695B (zh)

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CN201310394791.6A CN104425695B (zh) 2013-09-04 2013-09-04 发光二极管
TW102132690A TWI521743B (zh) 2013-09-04 2013-09-10 發光二極體
US14/474,797 US9439280B2 (en) 2013-09-04 2014-09-02 LED module with circuit board having a plurality of recesses for preventing total internal reflection

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Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
WO2015152387A1 (ja) * 2014-04-02 2015-10-08 千住金属工業株式会社 Ｌｅｄ用はんだ合金およびｌｅｄモジュール
JP6682907B2 (ja) * 2016-02-26 2020-04-15 三星ダイヤモンド工業株式会社 脆性基板の分断方法
CN112309243B (zh) * 2020-11-06 2022-08-23 武汉华星光电技术有限公司 背光模组及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814365A (en) * 2006-09-14 2008-03-16 Formosa Epitaxy Inc Flip-chip LED package structure
CN202564430U (zh) * 2012-01-17 2012-11-28 深圳市兆驰节能照明有限公司 大功率白光led封装结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5660461A (en) * 1994-12-08 1997-08-26 Quantum Devices, Inc. Arrays of optoelectronic devices and method of making same
WO2002084750A1 (en) * 2001-04-12 2002-10-24 Matsushita Electric Works, Ltd. Light source device using led, and method of producing same
US7719021B2 (en) * 2005-06-28 2010-05-18 Lighting Science Group Corporation Light efficient LED assembly including a shaped reflective cavity and method for making same
EP2187113A1 (en) * 2008-11-18 2010-05-19 Toshiba Lighting & Technology Corporation Lighting device including translucent cover for diffusing light from light source
US8556672B2 (en) * 2010-01-29 2013-10-15 Citizen Electronics Co., Ltd. Method of producing light-emitting device and light-emitting device
TWM401207U (en) * 2010-11-03 2011-04-01 Harvatek Corp Light-emitting diode packaging structure
TWI458133B (zh) * 2011-09-06 2014-10-21 Genesis Photonics Inc 基板
TWM422764U (en) 2011-10-13 2012-02-11 Jingdezhen Fared Technology Co Ltd Package structure of mixed light diode
CN103187499B (zh) * 2013-03-07 2015-11-25 天津三安光电有限公司 发光二极管及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814365A (en) * 2006-09-14 2008-03-16 Formosa Epitaxy Inc Flip-chip LED package structure
CN202564430U (zh) * 2012-01-17 2012-11-28 深圳市兆驰节能照明有限公司 大功率白光led封装结构

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US20150062930A1 (en) 2015-03-05
US9439280B2 (en) 2016-09-06
TW201515276A (zh) 2015-04-16
TWI521743B (zh) 2016-02-11
CN104425695A (zh) 2015-03-18

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