CN104425369B - Shearing device and cutting-off method - Google Patents
Shearing device and cutting-off method Download PDFInfo
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- CN104425369B CN104425369B CN201410436681.6A CN201410436681A CN104425369B CN 104425369 B CN104425369 B CN 104425369B CN 201410436681 A CN201410436681 A CN 201410436681A CN 104425369 B CN104425369 B CN 104425369B
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000010008 shearing Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 195
- 238000005520 cutting process Methods 0.000 claims abstract description 184
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 230000007246 mechanism Effects 0.000 claims description 75
- 230000008569 process Effects 0.000 claims description 50
- 238000007689 inspection Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000498 cooling water Substances 0.000 abstract description 10
- 238000004140 cleaning Methods 0.000 description 25
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000000047 product Substances 0.000 description 15
- 238000001816 cooling Methods 0.000 description 13
- 230000008602 contraction Effects 0.000 description 11
- 239000013589 supplement Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000004382 potting Methods 0.000 description 10
- 238000005266 casting Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention provides a kind of shearing device and cutting-off method, in the case that the position for carrying out thermal deformation even in package substrate and beginning to switch off line from the prealignment moment is offset, and can also be cut off by correcting the offset of cutting line before it will be cut off.In the shearing device (1) of double platform mode, using the otch detection camera (13) being integrally arranged on mandrel unit (10B), registration mark is shot before it will cut off package substrate (3).In the state of package substrate (3) is cooled down and shunk because of the influence of cutting water and cooling water, also can the position based on the registration mark shot, before will being cut off by control unit (CTL) correct away from the prealignment moment in set cutting line offset.Package substrate (3) can be cut off along the cutting line being corrected.
Description
Technical field
Thing is cut off by cut-out manufactures the shearing device of multiple electronic units through singualtion the present invention relates to a kind of
And cutting-off method.
Background technology
The substrate being made up of printed base plate or lead frame etc. is virtually divided into multiple regions of clathrate, and each
In individual region after the element of chip shape, the substrate referred to as package substrate of resin-encapsulated is integrally carried out to substrate.By making
The package substrate is cut off with shearing devices such as rotating swords, and is electronic unit by each area unit singualtion.
Since in the past, the predetermined region of package substrate has been cut off using shearing device and by shut-off mechanisms such as rotating swords.
For example, cutting off BGA (BGA Package, Ball Grid Array Package) product by the following manner.First, in base
On plate placement location, so that package substrate is placed on cut-out by the upward state in the surface (plant sphere) of the substrate-side of package substrate
With on workbench and being adsorbed.Secondly, the plant sphere of package substrate is aligned as object (contraposition).Now, make
The registration mark for being arranged on and planting on sphere is detected with image mechanism.As design load, prior clear and definite registration mark and differentiation are more
Position relationship between the virtual cutting line in individual region.Therefore, based on these position relationships, the position of virtual cutting line is set
Put.Secondly, the cut-out of absorption package substrate is made to be moved to substrate cutting position with workbench.On substrate cutting position, to envelope
The place of incision injection cutting water of substrate is filled, and is cut by shut-off mechanism along the cutting line being set on package substrate
It is disconnected.The electronic unit through singualtion is manufactured by cutting off package substrate.
If repeating the cut-out of package substrate using shearing device, produced due to the rotating sword installed on shut-off mechanism
A variety of factors such as frictional heat, the cutting water that is sprayed to package substrate and the heat transfer to cut-out workbench and package substrate exists
Thermal deformation is carried out by temperature change after being aligned.Therefore, at the time of being aligned and before will being cut off, sometimes
The position skew for the cutting line being set on package substrate.If being cut off in the state of the position skew of cutting line, have
The damage and deterioration of electronic unit may be caused.
As the technology being modified by measuring the dislocation of cutting line, proposition has following cutting process (for example, patent
The paragraph [0011] of document 1)：A kind of use topping machanism cuts the cutting process of plate object, by the datum line and described
The interval of blade testing agency is set as D, and the implementation cutting prealignment puts the alignment with the datum line, is implementing once should
Cut precalculated position and in the state of the contraposition of the datum line, (summary) is cut using blade testing agency detection up to described
Paring blade apart from d, relative to the datum line and the interval D of the blade testing agency, utilize (d-D) to correct the cutting
Simultaneously cut plate object in the position of blade.
Patent document 1：JP 2009-206362 publications
However, in above-mentioned cutting process, producing following problem.According to above-mentioned method, although amendment topping machanism
In cutting tip dislocation, but not consider plate object thermal deformation.Pass through cutting water cooling plate-like during due to cutting
Thing, therefore plate object itself also carries out thermal deformation (contraction).Further, during being aligned or during moving,
By to the cut-out through cooling, with the heat transfer of workbench, plate object carries out thermal deformation (contraction).In above-mentioned method
In, set by being aligned after cutting precalculated position, do not detect and cut pre- as caused by the thermal deformation of plate object
Position the offset put.Therefore, if the offset as caused by the thermal deformation of plate object is big, with generation cutting precalculated position
Dislocation in the state of cut off plate object possibility.
In addition, in recent years, the miniaturization of electronic unit increasingly develops, but in order to improve the production efficiency of electronic unit,
Substrate is set to maximize, it is desirable to increase the requirement of the quantity of the electronic unit taken out from a substrate becomes strong.With as it does so, cutting
Time needed for a disconnected substrate also increases.In order to solve the problem, raising productivity ratio is also required that for shearing device.As
One countermeasure, widely uses the shearing device for the so-called double platform mode for setting two cut-out workbench.
In the shearing device of double platform mode, cutting for thing is cut off sometimes up to completion on a cut-out workbench
Untill disconnected, another cut-out is with producing the stand-by period on workbench.During waiting time, due to cold by cutting water etc.
But cut-out produces thermal deformation with the heat transfer of workbench in thing is cut off.If a cut-out is cut with being cut off on workbench
Time needed for disconnected thing is elongated, then the stand-by period on another cut-out workbench is elongated, so as to be cut off the cutting line of thing
Skew quantitative change it is big.As substrate maximizes, the time increase needed for one substrate of cut-out is caused by the thermal deformation for being cut off thing
Offset the problem of increasingly become larger.
The content of the invention
The problem of present invention solves above-mentioned, its object is to provide a kind of shearing device and cutting-off method, the shearing device
And method is aligned before it will cut off cut-off thing using the image mechanism being integrally arranged in shut-off mechanism,
So as to correct the offset since the initial alignment moment and cut off.
The problem of in order to solve above-mentioned, shearing device involved in the present invention includes：Shut-off mechanism, cuts along multiple cutting lines
The disconnected cut-off thing with multiple registration marks；Objective table, for placing the cut-off thing；Travel mechanism, makes the objective table
Moved between substrate placement location and substrate cutting position；Injection equipment, towards being added for the cut-out cut-off thing
Work point sprays cutting water；And control unit, the objective table is at least controlled in the substrate placement location and substrate cutting position
Movement between putting and the cut-out carried out by the shut-off mechanism, the shearing device are cut off by using the shut-off mechanism
The cut-off thing on the substrate cutting position is placed on, the shearing device is characterised by, is further comprised：
First image mechanism, shoots the cut-off thing on the substrate placement location；With
Second image mechanism, shoots the cut-off thing on the substrate cutting position,
The control unit utilizes at least one in the multiple registration mark shot by first image mechanism
Divide camera data, to set the position of the cutting line,
The control unit utilizes at least one in the multiple registration mark shot by second image mechanism
Divide camera data, to correct the position of the cutting line,
The shut-off mechanism cuts off the cut-off thing along the cutting line being corrected.
In addition, shearing device involved in the present invention is characterised by, in above-mentioned shearing device, two institutes are provided with
State objective table,
Two objective tables can be moved between the substrate placement location and the substrate cutting position respectively
It is dynamic,
The first objective table cuts off described cut in the state of being located at the substrate cutting position in two objective tables
During disconnected thing, the second objective table sets the cut-out in the state of being located at the substrate placement location in two objective tables
The position of line.
Shearing device involved in the present invention, which has, is implemented as follows mode：
The shut-off mechanism has rotating sword,
Second image mechanism is configured to shoot the cutting line that the rotating sword is cut off,
Second image mechanism also serves as otch detection camera.
Shearing device involved in the present invention, which has, is implemented as follows mode：
The shut-off mechanism and second image mechanism are configured to one, are made by moving shut-off mechanism
Second image mechanism is moved.
In addition, shearing device involved in the present invention, which has, is implemented as follows mode：
It is package substrate to be cut off thing.
In addition, shearing device involved in the present invention, which has, is implemented as follows mode：
It is semiconductor wafer to be cut off thing.
The problem of in order to solve above-mentioned, cutting-off method involved in the present invention includes：
Cut-off thing with multiple registration marks is placed on to the process on objective table；The objective table is set to be put in substrate
The process moved between seated position and substrate cutting position；Towards the processed point injection cutting for cutting off the cut-off thing
The process of water；With the cut-off thing being placed on using shut-off mechanism along the cut-out of multiple cutting lines on the substrate cutting position
Process, the cutting-off method is characterised by, is further comprised：
On the substrate placement location, at least one in the multiple registration mark is shot using the first image mechanism
The first partial process；
The position of the cutting line is set using the camera data of the registration mark shot in first process
Process；
On the substrate cutting position, at least one in the multiple registration mark is shot using the second image mechanism
The second partial process；
The position of the cutting line is corrected using the camera data of the registration mark shot in second process
Process；With
The process for cutting off the cut-off thing along the cutting line being corrected.
Have in cutting-off method involved in the present invention and mode is implemented as follows：
Two objective tables are provided with, and are further comprised：
The process that thing is placed on the first objective table in two objective tables is cut off by first；
The work for making first objective table be moved between the substrate placement location and the substrate cutting position
Sequence；
The process that thing is placed on the second objective table in two objective tables is cut off by second；
The work for making second objective table be moved between the substrate placement location and the substrate cutting position
Sequence；
First objective table is located at the substrate cutting position and cut off the described first process for being cut off thing；With
Make the process of the first objective table movement and cut off the described first at least one be cut off in the process of thing
In point, second objective table is located on the substrate placement location and is cut off described second on thing and set the cut-out
The process of the position of line.
Mode is implemented as follows in addition, having in cutting-off method involved in the present invention：
The shut-off mechanism has rotating sword, and further comprises：
The process that the cutting line that the rotating sword is cut off is shot by second image mechanism；
The process for carrying out the inspection relevant with cutting groove in the cutting line.
Mode is implemented as follows in addition, having in cutting-off method involved in the present invention：
The shut-off mechanism and second image mechanism are configured to one, and further comprise：
Process by making the shut-off mechanism move and move second image mechanism.
Mode is implemented as follows in addition, having in cutting-off method involved in the present invention：
The cut-off thing is package substrate.
Mode is implemented as follows in addition, having in cutting-off method involved in the present invention：
The cut-off thing is semiconductor wafer.
According to the present invention, in shearing device, the stand-by period is produced before starting to be cut off the cut-out of thing, also can
The coordinate position and the coordinate of the registration mark before it will be cut off of enough registration marks by detection at the alignment moment
Position, corrects the offset of the cutting line since the alignment moment.Therefore, it is possible to the position for the cutting line that thing is cut off in amendment
Cut off afterwards along the cutting line being corrected.
Brief description of the drawings
Fig. 1 is the schematic plan for the shearing device for representing the double platform mode involved by the present embodiment.
Fig. 2 is the outside drawing for the summary for representing package substrate, and Fig. 2 (a) is the top view from substrate-side, Fig. 2's
(b) it is front view, Fig. 2 (c) is side view.
Fig. 3 is in the shearing device of double platform mode, to represent each cut-out workbench involved by the present embodiment
The diagrammatical time table of action.
Fig. 4 is the schematic plan of state for representing to be directed at package substrate, when Fig. 4 (a) represents prealignment
Carve, Fig. 4 (b) represent to be cut off before alignment.
Fig. 5 is the figure for the variation for representing package substrate, and Fig. 5 (a) is the top view from substrate-side, Fig. 5 (b)
It is front view.
Description of reference numerals
1 shearing device
2 preposition objective tables
3 package substrates (are cut off thing, the first cut-off thing, the second cut-off thing)
3a plants sphere
3b real estates
4A, 4B cut-out workbench
5A, 5B cut-out objective table (objective table, the first objective table, the second objective table)
6 substrate placement sections
7 substrate cutting portions
8 base-plate cleaning portions
9 pairs of mutatis mutandis cameras (the first image mechanism)
10A, 10B mandrel unit (shut-off mechanism)
11A, 11B rotating sword
12A, 12B cutting water are with nozzle (injection equipment)
13 otch detection camera (the second image mechanism)
14 aggregates being made up of multiple electronic unit P
15 wiper mechanisms
16 cleaning rollers
17 inspection objective tables
18 inspection cameras
19 turn tables
20 transfer mechanisms
21 certified products pallets
22 baseplate parts
23 potting resin portions
24 registration marks
25th, 25S, 25L cutting line
26 regions
27 potting resin portions
A receiving units
B cutting units
C cleaning units
D inspection units
E accepting units
P electronic units
CTL control units
LD loads (Load)
PA prealignments (Pre Alignment)
CT cuts off (Cut)
WD is cleaned and is dried (Wash＆Dry)
UL unloads (Unload)
WT waits (Wait)
AA supplement alignments (Additional Alignment)
S processes (Steps)
Embodiment
In the shearing device of double platform mode, detected by using the otch being integrally arranged on mandrel unit
With camera, registration mark is detected again before cut-out package substrate.Thus, repaiied in the state of package substrate is shunk
Offset just away from the cutting line set by prealignment, the cutting line the being corrected cut-out encapsulation along before will be cut off
Substrate.
Referring to figs. 1 to Fig. 5, the embodiment to shearing device involved in the present invention is illustrated.To in present specification
Any figure, carry out suitably omitting or exaggerating schematically to describe for ease of understanding.Identical structural element is made
Identical reference is used, and is suitably omitted the description.
Fig. 1 is the schematic plan for the shearing device 1 for representing the double platform mode involved by the present embodiment.Cut-out dress
Putting 1 makes cut-off thing monolithic turn to multiple electronic units.Shearing device 1 has the reception list respectively as structural element (module)
First A, cutting unit B, cleaning unit C, inspection unit D and accepting unit E.
Relative to other structures key element, each structural element (each unit A to E) is able to load and unload and can exchange, in advance
Prepare each structural element respectively with different plurality of specifications corresponding with the requirement specification of expectation.By being wanted including each structure
Plain A to E constitutes shearing device 1.
Preposition objective table 2 is provided with receiving unit A.Preposition objective table 2 is sealed from the resin of the device as preceding process
Assembling device receives the package substrate 3 equivalent to cut-off thing.Package substrate 3 (for example, package substrate of BGA modes) is with substrate-side
Surface (plant sphere) mode upward be configured on preposition objective table 2.
Package substrate 3 has the circuit board of lead frame or printed base plate etc., installs the multiple of clathrate on circuit boards
In region and the chip including passive element or active component and the potting resin that is made up of the hardening resin being molded in the lump.
Cutting unit B is provided with cut-out workbench 4A, 4B.Shearing device 1 is the cut-out of so-called double platform mode
Device.Two cut-outs are with workbench 4A, 4B by the way that travel mechanism (not shown) can Y-direction be moved along along figure respectively, and energy
It is enough to be rotated along θ directions.In cut-out with being provided with cut-out objective table 5A, 5B on workbench 4A, 4B.Cutting unit B is put by substrate
Portion 6, substrate cutting portion 7 and base-plate cleaning portion 8 is put to constitute.
It is provided with substrate placement section 6 to mutatis mutandis camera 9.Camera 9 can on substrate placement section 6 independently along
X-direction is moved.Package substrate 3 detects the registration mark being formed on plant sphere in substrate placement section 6 by camera 9,
And the position of virtual cutting line is set with package substrate 3.
Two mandrel units 10A, 10B as shut-off mechanism are provided with substrate cutting portion 7.Two mandrel unit 10A,
10B can be moved independently along X-direction and Z-direction.Rotating sword 11A, 11B is respectively arranged with two mandrel units 10A, 10B.
These rotating swords 11A, 11B transfer to cut off package substrate 3 respectively in the face inward turning along Y-direction.Therefore, in the present embodiment, exist
Substrate cutting portion 7 is provided with two shut-off mechanisms (mandrel unit 10A, 10B).
Each mandrel unit 10A, 10B, which are provided with injection, to be used to suppress to produce because of rotating sword 11A, 11B of high speed rotation
Frictional heat cutting water cutting water nozzle 12A, 12B.Being processed for package substrate 3 is cut off towards rotating sword 11A, 11B
Point injection cutting water.Further, integrally it is provided with mandrel unit 10B sides for detecting what is cut off by rotating sword 11B
The position of cutting groove (otch), width, the otch detection camera 13 for having N/D (tipping) etc..To shoot rotating sword 11B
The mode on cutting line cut off sets camera 13.In the present embodiment, show to set in mandrel unit 10B sides and take a picture
The situation of machine 13, it is also possible to be arranged on heart axle 10A sides.Or, photograph can also be set in two heart axles 10A, 10B both sides
Machine 13.
Wiper mechanism (not shown) is provided with base-plate cleaning portion 8, mechanism cleaning is by by cutting off package substrate 3 come single
The plant sphere for the aggregate 14 that multiple electronic unit P of piece are constituted.
The cleaning of each electronic unit P of the cleaning through singualtion resin side surface (casting face) is provided with cleaning unit C
Mechanism 15.The cleaning roller 16 that can be rotated by axle of Y-direction is provided with wiper mechanism 15.Wiper mechanism in cleaning casting face
15 top is configured with the aggregate 14 being made up of multiple electronic unit P.Sphere side is planted by conveyer absorption (not shown)
Carry out fixed set zoarium 14.That is, make casting that aggregate 14 is fixed on conveyer face-down.Conveyer can be along X side
To and Z-direction movement.Declined by the conveyer and moved back and forth in X direction, so as to clean aggregate by cleaning roller 16
14 casting face.
Inspection unit D is provided with inspection objective table 17.By cut-out package substrate 3 is come multiple ministrys of electronics industry through singualtion
Part P constitute aggregate 14 in the lump transfer in inspection with objective table 17.Inspection objective table 17 is configured in X direction
It is mobile, and can be rotated by axle of Y-direction.The collection being made up of multiple electronic unit P (for example, BAG products) through singualtion
Zoarium 14 checks the surface (casting face) of resin side and the surface (plant sphere) of substrate-side by inspection with camera 18, and
It is screened as certified products and substandard products.The aggregate 14 being made up of the electronic unit P of inspected is with checker flag pattern-like (checker
Flag pattern shapes) or clathrate transfer on turn table 19.It is provided with inspection unit D for being configured to tray conveying
Multiple transfer mechanisms 20 of electronic unit P on turn table 19.
Accepting unit E be provided with house certified products certified products with pallet 21 and house substandard products substandard products with pallet (not
Diagram).The electronic unit P being screened as certified products and substandard products is received in each pallet by transfer mechanism 20.In figure, only table
A certified products pallet 21, but settable multiple certified products pallet 21 in accepting unit 21 are shown.
In shearing device 1, for example, the shifting of package substrate 3 is controlled by the control unit CTL being arranged in receiving unit A
The setting of the position of cutting line dynamic, in package substrate 3, using shut-off mechanism package substrate 3 cut-out, use wiper mechanism
Plant sphere and all processing such as the cleaning in face and the inspection of electronic unit P through singualtion and collecting of casting.The present embodiment table
Show the control unit CTL by being arranged in receiving unit A to control the situation of all processing.This is not limited to, can also be by
Control unit CTL is arranged in other units.Furthermore it is also possible to set respective control unit to control from the processing for being cut to cleaning
And the processing from checking to collecting.
Fig. 2 is the outside drawing for the summary for representing package substrate 3.It is expressed as：Fig. 2 (a) is sealed from substrate-side
The top view of substrate 3 is filled, Fig. 2 (b) is front view, and Fig. 2 (c) is side view.Package substrate 3 is set by baseplate part 22 and encapsulation
Fat portion 23 is constituted, wherein, the potting resin portion is made up of hardening resin.(plant ball in the surface that package substrate 3 has substrate-side
Face) 3a and resin side surface (casting face) 3b.On the plant sphere 3a of package substrate 3 along its length and width is formed
There are multiple registration marks 24 (mark represented in figure with "+").With the size of package substrate 3 and the electronic unit P through singualtion
Quantity accordingly determine along its length and width formation registration mark 24.
Multiple registration marks 24 are detected to mutatis mutandis camera 9 (reference picture 1) by being arranged on substrate placement section 6
After coordinate position, using the coordinate position data of these registration marks 24 detected, virtual cutting line (border is set
Line) 25 position.Cutting line 25 is set with cutting line 25S and the shearing length side of the width of cut-out package substrate 3 respectively
To cutting line 25L.The region 26 for being cut off line 25S and cutting line 25L encirclements corresponds to electronic unit P respectively.Can be according to production
Product arbitrarily determine the quantity of the registration mark 24 detected to set cutting line 25S, 25L.
Fig. 3 is the cutting unit B for illustrating in the shearing device 1 of the double platform mode of the present embodiment shown in Fig. 1
In cut-out workbench 4A and 4B action diagrammatical time table, with the timetable that down time passs from the outset come table
Show.In figure 3, reference LD represents that loading (Load), PA represents that prealignment (Pre Alignment), CT represent cut-out
(Cut), WD represent to clean and dry (Wash＆Dry), UL represent unloading (Unload), WT represent the stand-by period (Wait) and
AA represent to be cut off before supplement alignment (Additional Alignment) each state.S1, S2 ..., S5 point
Do not represented with a downward arrow in cut-out workbench 4A, 4B, using a package substrate as object come carry out from
(LD) is loaded to the process (Steps) for unloading (UL).
Referring to figs. 1 to Fig. 3, enter for a series of process that package substrate 3 is cut off in each cut-out workbench 4A, 4B
Row explanation.Initially, for each cut-out with workbench 4A, 4B cut off package substrate 3 until monolithic turn to multiple electronic unit P
Action illustrate.As shown in figure 1, in substrate placement section 6, being installed on cut-out objective table of the cut-out with workbench 4A
Plant sphere 3a is set to be placed with package substrate 3 (Fig. 3 LD1) upward on 5A.Secondly, using to mutatis mutandis camera 9, along length side
To and width detect the registration mark 24 to be formed on the plant sphere 3a of package substrate 3 and determine coordinate position.Can be with
The number of detection registration mark 24 is arbitrarily determined according to the size of package substrate 3 and electronic unit P quantity.Based on the detection
The data of the coordinate position of the registration mark 24 gone out, difference is in the width direction and the void of package substrate 3 is cut off in length direction setting
The cutting line 25S and 25L (Fig. 3 PA1) of plan.
Secondly, cut-out workbench 4A is made to be moved from substrate placement section 6 to substrate cutting portion 7.In substrate cutting portion 7,
Package substrate 3 is cut off by two rotating swords 11A, 11B being arranged on mandrel unit 10A, 10B.First, package substrate is made
In the state of 3 length direction is placed parallel to the mode of X-direction (reference picture 1), make cut-out workbench 4A towards heart axle list
First 10A, 10B (Fig. 1 +Y direction) are mobile.By making package substrate 3 enter rotating sword 11A, 11B, along along package substrate 3
Width each cutting line 25S (reference picture 2) cut-out package substrate 3.When being cut off, from cutting (operating) water nozzle 12 to rotation
Turn the processed point injection cutting water that sword 11A, 11B and package substrate 3 are contacted.Secondly, cut-out workbench 4A is made to rotate 90
Degree, each cutting line 25L (reference picture 2) along the length direction along package substrate 3 cuts off package substrate 3.In this way, being used in cut-out
The package substrate 3 placed on workbench 4A is cut off along cutting line 25S and cutting line 25L, so as to form each region 26.The region
26 be electronic unit P (Fig. 3 CT1) respectively through singualtion.
Now, first along the width along package substrate 3 each cutting line 25S cut off package substrate 3, secondly along
Each cutting line 25L cut-out package substrates 3 along its length.Not limited to this, can also be first along respectively cutting along its length
Break 25L cut-out package substrates 3, secondly cuts off package substrate 3 along each cutting line 25S in the width direction.
Secondly, in the state of the aggregate 14 being made up of multiple electronic unit P through singualtion is adsorbed in holding in the lump, make
Cut-out workbench 4A is moved from substrate cutting portion 7 to base-plate cleaning portion 8.In base-plate cleaning portion 8, cleaning electronic unit P's
Plant sphere 3a and it is dried (Fig. 3 WD1).The aggregate 14 for terminating cleaning and the electronic unit P dried passes through conveyer
(not shown) plants sphere 3a by absorption in the lump, and is transported to cleaning unit C (Fig. 3 UL1).
As shown in Fig. 3 S1, the action illustrated always herein is represented to being placed on cut-out workbench 4A most
A series of process untill being transported to matting after the first progress singualtion of package substrate 3.That is, by being loaded
(LD1) → prealignment (PA1) → cut-out (CT1) → cleaning and the process for drying (WD1) extremely unloading (UL1), the coverlet of package substrate 3
Piece turns to the aggregate 14 being made up of multiple electronic unit P, and is transported to following cleaning unit C in the lump.
After loading (LD1) of the cut-out with workbench 4A is completed, in cut-out with workbench 4B, dress is equally proceeded by
Carry (LD2) → prealignment (PA2) → cut-out (CT2) → cleaning and dry (WD2) to the series of processes for unloading (UL2).However,
Cut-out workbench 4B can not enter the process until completing the processing in cut-out workbench 4A each operation.Therefore, to Fig. 3
S2 action for, complete cut-out with the prealignment (PA2) in workbench 4B after, produce the stand-by period (WT2) until
Cut-out is completed with untill the cut-out (CT1) in workbench 4A.In other words, complete cut-out with workbench 4A cut-out (CT1) it
Afterwards, in cut-out with beginning to switch off (CT2) in workbench 4B.In this way, until completing cut-out (CT) in the cut-out workbench of side
Untill, the stand-by period (WT) is produced in the cut-out workbench of opposite side.
If cut-out with workbench 4A, 4B, proceed cut-out, then (WT) phase stand-by period before beginning to switch off
Between, package substrate 3 carries out thermal deformation (contraction) because being influenceed by cutting water etc..Therefore, it is possible to right relative to pre-
Cutting line 25S, 25L that accurate (PA) is set in the moment, produce dislocation on cutting line 25S, 25L before will being cut off.
If being cut off in the state of dislocation is produced, it is likely that cause electronic unit P damage and deterioration.
As shown in figure 1, in substrate placement section 6, package substrate 3 is aligned under normal temperature (25~25 DEG C) atmosphere.Separately
On the one hand, in substrate cutting portion 7, in order to suppress the frictional heat of rotating sword 11A, 11B, from cutting water with nozzle 12A, 12B to
Package substrate 3 sprays cutting water.Although different according to the condition of cut-out, cutting sometimes is water-cooled to compared with atmosphere temperature
10 DEG C of low temperature~15 DEG C.In order to improve cooling effect, cutting water can also be cooled to lower temperature sometimes.
In order to improve cooling effect, it can also set sometimes with cutting water nozzle 12 differently from rotating sword 11A, 11B
The two lateral coolings for being processed point spray cooling water are with nozzle (not shown).Can also be by the both sides of rotating sword 11A, 11B
Multiple cooling nozzles are set rather than one is set, so as to further improve cooling effect.It is identical with cutting water, cooling water
It is cooled to 10 DEG C~15 DEG C.
Package substrate 3, cut-out are cooled down by this cutting water and cooling water with workbench 4A, 4B and cut-out objective table
5A、5B.By cooling down package substrate 3, cut-out workbench 4A, 4B and cut-out objective table 5A, 5B respectively, so that according to composition
These material is shunk from normal temperature state.
Cut-out after cut-out (CT1) is completed, is moved with workbench 4A from substrate cutting portion 7 to base-plate cleaning portion 8, and
Plant sphere 3a is cleaned and dried after (WD1), return to substrate placement section 6.The cut-out for returning to substrate placement section 6 is used
Workbench 4A and cut-out keep the temperature almost identical with the state for being cut water and cooling water cooling with workbench 5 respectively.Such as
Shown in Fig. 3 S3, new package substrate 3 is placed on cut-out workbench 4A (LD3) in substrate placement section 6.In normal temperature
Prealignment (PA3) is carried out with the package substrate 3 placed on workbench 4A to cut-out under atmosphere.However, because another cut-out is used
Workbench 4B is in cut-out (CT2), therefore cut-out waits (WT3) cut-out (CT3) until completing the cut-out with workbench 4A
(CT2)。
According to prior art, occurs following unfavorable condition.That is, due to cut-out workbench 4A and cut-out objective table 5A
It is cooled when cutting off (CT1), therefore during (WT3) is waited, cut-out workbench 4A for the state through cooling and cut
It is disconnected to produce heat transfer from package substrate 3 with objective table 5A, as a result, package substrate 3 shrinks through cooling.By being shunk,
Relative to the cutting line 25S and 25L set in prealignment (PA3) in the moment, on actual cutting line 25S and 25L position
Produce skew.If the stand-by period, (WT3) was elongated, cutting line 25S and 25L offset further become big.
According to prior art, such as, in the fig. 3 embodiment, loading (LD) needs 10 second time, prealignment (PA) needs
30 second time, cut-out (CT) needs 120 second time, and cleaning and dry (WD) need 30 second time, when unloading (UL) needs 10 seconds
Between, supplement alignment (AA) needs 10 second time.Then, in S3 processes, the stand-by period (WT3) is 50 seconds, is sealed during this
Dress substrate 3 shrinks through cooling.In recent years, because package substrate 3 maximizes, electronic unit P output increase, so as to cut off
The overall length increase of line, therefore with waiting time (WT) elongated tendency.Therefore, the amount of contraction that package substrate 3 shrinks
Also become big, so that cutting line 25S, 25L offset also become big.
On the other hand, according to the present invention, in order to correct the offset in S3 processes produced by period stand-by period (WT3),
Supplement alignment (AA3) is carried out before cut-out (CT3).In other words, after cut-out is with completion cut-out (CT2) in workbench 4B,
And then in cut-out with carrying out supplement alignment (AA3) in workbench 4A.Using being integrally arranged on mandrel unit 10B (references
Otch detection on Fig. 1) carries out supplement alignment (AA3) with camera 13.By the way that the otch detection camera 13 is used to mend
Fill in alignment (AA3), cutting line 25S and 25L offset are corrected before it will be cut off (CT3).
By carrying out supplement alignment (AA3), the registration mark 24 being capable of detecting when before it will be cut off (CT3)
Coordinate position, and correct using the coordinate position data offset since prealignment (PA3) the moment.Therefore, though because
The influence of cutting water and cooling water and package substrate 3 is in the state shunk, can also be based on what is set by prealignment (PA3)
Cutting line 25S, 25L, correct cutting line 25S, 25L offset before it will cut off package substrate 3.Stand-by period (WT3)
Longer, effect of the invention is more notable.
In this way, before will cutting off package substrate 3 in cut-out workbench 4A, 4B, supplement alignment (AA) is carried out, so that
After cutting line 25S, 25L for correcting the package substrate 3 shunk position, it can be cut along cutting line 25S, 25L of amendment
It is disconnected.
Fig. 4 represent the prealignment moment and will be cut off before supplement alignment the moment alignment.Fig. 4 (a)
It is the top view of the package substrate 3 at the prealignment moment from substrate-side, Fig. 4 (b) will be cut from substrate-side
The top view of the package substrate 3 at the supplement alignment moment before disconnected.Package substrate 3 before will being cut off is because along length
Direction and width are shunk and diminished.In Fig. 4, to width of the cut-out with the package substrate 3 placed on workbench 4A
The situation that cutting line 25S on direction is set and corrected is illustrated.
Fig. 4 (a) is represented using being arranged on being aligned to mutatis mutandis camera 9 on substrate placement section 6 (reference picture 1)
State.For example, represent by detect ten be arranged on the registration mark 24 on the plants sphere 3a of package substrate 3 determine its seat
The situation of cursor position.As shown in figure 1, can only be moved in X direction to mutatis mutandis camera.On Y-direction, mobile cut-out can be passed through
Workbench 4A is used, so that camera 9 is relatively moved along Y-direction.In this way, by making camera 9 move in X direction, and make
Cut-out is moved with workbench 4A along Y-direction, is detected to be arranged on the registration mark 24 planted on sphere 3a of package substrate 3, is determined
Coordinate position.Camera 9 can only be moved in X direction, and X of the registration mark 24 away from datum mark is determined by using linear scale
Coordinate.Hereinafter, by ten registration marks 24 be referred to as registration mark 24-1,24-2,24-3 ..., 24-10.
By registration mark 24-1,24-2,24-3 ..., 24-10 sequence detection go out each ten registration marks, two point examination
X-coordinate X1A, X2B, X1C, X1D, X1E of each position A, B, C, D, E on length direction.First, make to mutatis mutandis camera 9 along X
Direction is moved, and determines registration mark 24-1 X-coordinate X1A.Secondly, cut-out is moved with workbench 4A along Y-direction, determine alignment
Indicate 24-2 X-coordinate X1A.Secondly, camera 9 is moved in X direction, determine registration mark 24-3 X-coordinate X1B.Secondly,
Cut-out is moved with workbench 4A along Y-direction, determine registration mark 24-4 X-coordinate X1B.In this way, until registration mark 24-
10, measure the X-coordinate of ten points.
On each position A~E of the length direction of package substrate 3, the X-coordinate of two point examination registration mark 24.By inciting somebody to action
2 points of the X-coordinate determined equalizes to obtain each position A~E X-coordinate.X-coordinate and each pair of fiducial mark based on equalization
Distance between will 24, sets the position of the virtual each cutting line 25S cut off in the width direction X-coordinate respectively.
Fig. 4 (b) is represented in substrate cutting portion (reference picture 1), is detected using the otch being arranged on mandrel unit 10B
With camera 13, the state being aligned to the package substrate 3 of the contraction before will cutting off.Camera 13 only being capable of edge
X-direction is moved.Now, camera 13 is moved in X direction, determine the X-coordinate of registration mark 24-2,24-10 on A, E position
(X2A、X2E)。
Carried out for the X-coordinate determined in the prealignment moment and the X-coordinate determined before it will cut off
Compare to calculate the amount of contraction.Amount of contraction based on calculating, each cutting line 25S of amendment in the width direction X-coordinate.In this way,
In the state of the contraction of package substrate 3, each cutting line 25S of cut-out width can be also corrected exactly.
In the present embodiment, in order to set and correct the position of the cutting line 25S on width, surveyed in the alignment moment
Fixed ten registration mark 24-1,24-2,24-3 ..., 24-10 X-coordinate, and the supplement alignment before it will be cut off
Two registration marks 24-2,24-10 X-coordinate are determined in moment.Not limited to this, is wishing further to improve precision according to product
In the case of, it can also set and correct the cutting line 25S's of width by determining greater number of registration mark 24
Position.
Equally, each cutting line 25L (reference picture 2) cut off along its length is modified.In this way, according to the present invention,
Cutting line 25S, 25L can be modified to cut off because of the influence of cutting water and cooling water to enter before will being cut off
The package substrate 3 of row thermal deformation (contraction).Thereby, it is possible to prevent electronic unit P damage and deterioration.
Fig. 5 represents the variation of package substrate 3.It is expressed as：Fig. 5 (a) is package substrate 3 from substrate-side
Top view, Fig. 5 (b) is front view.Package substrate 3 is by baseplate part 22 and the structure of potting resin portion 27 for being divided into four block units
Into.In the case where the difference of the linear expansion coefficient in baseplate part 22 and potting resin portion 27 is big, by the way that potting resin portion 27 is split
Into four block units, the bending in the potting resin portion 27 of contraction when can suppress to be hardened due to hardening resin.In addition,
When using Cu (copper alloy) as lead frame, because Cu linear expansion coefficient is big, therefore potting resin portion 27 is divided into many
Individual block unit is that the reduction to bending is effective.Alignment precision can be improved by suppressing the bending in potting resin portion 27.
If carrying out thermal change because of the influence of cutting water and cooling water using the big material of linear expansion coefficient in baseplate part 22
The amount (amount of contraction) of shape becomes big.If it is big to shrink quantitative change, the offset of cutting line 25S, 25L on package substrate 3 also become big.Cause
This, the method cut off after cutting line 25S, 25L position are corrected before will being cut off becomes more important.According to this
Invention, even if using the big material of linear expansion coefficient as baseplate material, cut-out can be also corrected before it will be cut off
Line 25S, 25L offset, therefore even if can also enter in a contracted state along accurate cutting line 25S, the 25L that should be cut off
Row cut-out.
As described above, in the shearing device 1 of double platform mode, before a shut-off mechanism completes cut-out, another
The stand-by period is produced in one shut-off mechanism.During waiting time, pass through the cut-out to being cut water and cooling water cooling
Package substrate 3 is cooled down with objective table 5A, 5B heat transfer with workbench 4A, 4B and cut-out.Influenceed by this, in waiting time
Package substrate 3 is from being thermally deformed and is shunk.Therefore, the virtual of package substrate 3 set in the prealignment moment cuts
Skew is produced on broken string 25S, 25L position.
According to the present invention, by using the otch detection camera 13 being integrally arranged on mandrel unit 10B,
Detect prealignment mark 24 before package substrate 3 will be cut off and determine its coordinate position.Thus, confirmation will be cut off
Cutting line 24S, 25L of package substrate 3 before position.That is, at the prealignment moment and before it will be cut off, confirm
The coordinate position of prealignment mark 24.Therefore, even in the wait cut off since the prealignment moment to package substrate 3
In the case that package substrate 3 is shunk in time, also can by the position of cutting line 25S, 25L to the prealignment moment and
The position of cutting line 25S, 25L before will being cut off are compared to correct the offset since the prealignment moment.
In the state of package substrate 3 is shunk because of the influence of cutting water and cooling water, it will can also cut off
Cut off before after accurate cutting line 25S, 25L that amendment should be cut off position, so as to prevent electronic unit P's
Damage and deteriorate.
In recent years, because the maximization of package substrate 3 increasingly develops, the ministry of electronics industry taken out from a package substrate 3
Part P quantity also increases, therefore the overall length of cutting line is also increasing.Thus, particularly in the cut-out of double platform mode
In device, the time needed for one package substrate 3 of cut-out is also in increase.Therefore, with the stand-by period also increased tendency.To this
For kind of situation, it is preferred that emphasis is accurately hold by being produced from the prealignment moment to the thermal deformation generated before will be cut off
The offset of raw cutting line.Therefore, as the present invention, be aligned before it will be cut off correct cutting line 25S,
The method that package substrate 3 is cut off after 25L offset is very effective method.
In addition, in the present embodiment, using the otch detection camera 13 being arranged on mandrel unit 10B, will
Registration mark 24 is detected before being cut off and coordinate position is determined.Not limited to this, can also use institute in the prealignment moment
Use to mutatis mutandis camera 9, registration mark 24 is detected before it will be cut off.
Even if in addition, the rheological parameters' change with time such as strain of main body frame are generated, so that the installation position of otch detection camera 13
Change is put, the camera site of otch detection camera 13 can be also adjusted, to shoot mandrel unit 10B rotating sword 11B
On the cutting line 25 cut off.Therefore, it is possible to cut off package substrate by determining the correct coordinate position of registration mark 24
3。
In addition, the present invention is not limited to the shearing device 1 of the double platform mode with two cut-out workbench, may be used also
With the shearing device suitable for the single-station platform mode with a cut-out workbench.
As cut-off thing, semiconductor wafer can also be used in addition to package substrate 3.Due to each area of semiconductor wafer
Being incorporated in domain has electronic circuit, therefore is electronic unit P equivalent to the part (semiconductor chip) in each region after cut-out.
In accordance with the invention it is possible to be corrected before it will be cut off in the position of the cutting line at prealignment moment.Therefore,
The present invention makes tremendous contribution to the raising of yield rate, the raising of reliability and the raising of productivity ratio, is industrial be worth very
High device.
In addition, the present invention is not limited to the above embodiments, can be according to need in the main scope for not departing from the present invention
Will, it is any and appropriately combined and changed, or optionally use.
Claims (12)
1. a kind of shearing device, including：
Shut-off mechanism, the cut-off thing with multiple registration marks is cut off along multiple cutting lines；Objective table, for placing described cut
Disconnected thing；Travel mechanism, makes the objective table be moved between substrate placement location and substrate cutting position；Injection equipment,
Towards the processed point injection cutting water for cutting off the cut-off thing on the substrate cutting position；And control unit, at least control
Make movement of the objective table between the substrate placement location and the substrate cutting position and entered by the shut-off mechanism
Capable cut-out, the shearing device cuts off the quilt being placed on the substrate cutting position by using the shut-off mechanism
Thing is cut off, the shearing device is characterised by, is further comprised：
First image mechanism, is being cut off thing described in the substrate placement location photographs；With
Second image mechanism, is influenceed in substrate cutting position photographs by the cutting water sprayed from the injection equipment
The cut-off thing,
The control unit utilizes at least a portion in the multiple registration mark shot by first image mechanism to take the photograph
As data, to set the position of the cutting line,
The control unit utilizes at least a portion in the multiple registration mark shot by second image mechanism to take the photograph
As data, to correct the position of the cutting line,
The shut-off mechanism cuts off the cut-off thing along the cutting line being corrected.
2. shearing device according to claim 1, it is characterised in that
Two objective tables are provided with,
Two objective tables can be moved between the substrate placement location and the substrate cutting position respectively,
The first objective table cuts off the cut-off thing in the state of being located at the substrate cutting position in two objective tables
Period, the second objective table sets the cutting line in the state of being located at the substrate placement location in two objective tables
Position.
3. shearing device according to claim 2, it is characterised in that
The shut-off mechanism has rotating sword,
Second image mechanism is configured to shoot the cutting line that the rotating sword is cut off,
Second image mechanism also serves as otch detection camera.
4. shearing device according to claim 3, it is characterised in that
The shut-off mechanism and second image mechanism are configured to one,
Second image mechanism is moved by moving the shut-off mechanism.
5. shearing device according to claim 4, it is characterised in that
The cut-off thing is package substrate.
6. shearing device according to claim 4, it is characterised in that
The cut-off thing is semiconductor wafer.
7. a kind of cutting-off method, including：
Cut-off thing with multiple registration marks is placed on to the process on objective table；
The process for making the objective table be moved between substrate placement location and substrate cutting position；
The process of cutting water is sprayed towards the processed point for cutting off the cut-off thing on the substrate cutting position；With
The process for cutting off the cut-off thing being placed on the substrate cutting position along multiple cutting lines using shut-off mechanism, institute
State cutting-off method to be characterised by, further comprise：
On the substrate placement location, at least a portion in the multiple registration mark is shot using the first image mechanism
The first process；
The work of the position of the cutting line is set using the camera data of the registration mark shot in first process
Sequence；
On the substrate cutting position, shot using the second image mechanism by the cutting water sprayed from the injection equipment
At least one of second process in the multiple registration mark of the cut-off thing of influence；
The work of the position of the cutting line is corrected using the camera data of the registration mark shot in second process
Sequence；With
The process for cutting off the cut-off thing along the cutting line being corrected.
8. cutting-off method according to claim 7, it is characterised in that
Two objective tables are provided with, and are further comprised：
The process that thing is placed on the first objective table in two objective tables is cut off by first；
The process for making first objective table be moved between the substrate placement location and the substrate cutting position；
The process that thing is placed on the second objective table in two objective tables is cut off by second；
The process for making second objective table be moved between the substrate placement location and the substrate cutting position；
First objective table is located on the substrate cutting position and cut off the described first process for being cut off thing；With
In making the process of the first objective table movement and cutting off described first at least a portion being cut off in the process of thing,
Second objective table is located on the substrate placement location and is cut off described second on thing and set the cutting line
The process of position.
9. cutting-off method according to claim 8, it is characterised in that
The shut-off mechanism has rotating sword, and further comprises：
The process that the cutting line that the rotating sword is cut off is shot by second image mechanism；With
The process for carrying out the inspection relevant with cutting groove in the cutting line.
10. cutting-off method according to claim 9, it is characterised in that
The shut-off mechanism and second image mechanism are configured to one, and further comprise：
Process by making the shut-off mechanism move and move second image mechanism.
11. cutting-off method according to claim 10, it is characterised in that
The cut-off thing is package substrate.
12. cutting-off method according to claim 10, it is characterised in that
The cut-off thing is semiconductor wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2013181393A JP6218511B2 (en) | 2013-09-02 | 2013-09-02 | Cutting apparatus and cutting method |
| JP2013-181393 | 2013-09-02 |
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| KR (2) | KR101708976B1 (en) |
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Families Citing this family (12)
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| JP6212507B2 (en) * | 2015-02-05 | 2017-10-11 | Ｔｏｗａ株式会社 | Cutting apparatus and cutting method |
| JP6339514B2 (en) * | 2015-03-25 | 2018-06-06 | Ｔｏｗａ株式会社 | Cutting apparatus and cutting method |
| JP2016213240A (en) * | 2015-04-30 | 2016-12-15 | Ｔｏｗａ株式会社 | Manufacturing device and manufacturing method |
| JP2016219520A (en) * | 2015-05-18 | 2016-12-22 | Ｔｏｗａ株式会社 | Semiconductor device and manufacturing method of the same |
| US20170323708A1 (en) * | 2016-05-03 | 2017-11-09 | Texas Instruments Incorporated | Component sheet and method of singulating |
| JP6845038B2 (en) * | 2017-02-27 | 2021-03-17 | 株式会社ディスコ | How to divide the package board |
| JP6598811B2 (en) * | 2017-03-23 | 2019-10-30 | Ｔｏｗａ株式会社 | Semiconductor package placement apparatus, manufacturing apparatus, semiconductor package placement method, and electronic component manufacturing method |
| KR102123477B1 (en) | 2018-02-28 | 2020-06-16 | 공주대학교 산학협력단 | Spindle Monitoring System Using Laser Sensor |
| JP7150401B2 (en) * | 2018-11-20 | 2022-10-11 | 株式会社ディスコ | Workpiece processing method |
| JP6746756B1 (en) * | 2019-05-24 | 2020-08-26 | Ｔｏｗａ株式会社 | Suction plate, cutting device and cutting method |
| JP7377092B2 (en) * | 2019-12-16 | 2023-11-09 | Ｔｏｗａ株式会社 | Statistical data generation method, cutting device and system |
| CN115139368B (en) * | 2022-07-07 | 2023-12-08 | 深圳市象形科技有限公司 | Laminating die-cutting equipment for flexible material and die-cutting method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006012901A (en) * | 2004-06-22 | 2006-01-12 | Disco Abrasive Syst Ltd | Processing equipment |
| CN1935459A (en) * | 2005-09-22 | 2007-03-28 | 东和株式会社 | Cutting apparatus |
| CN1935480A (en) * | 2005-09-20 | 2007-03-28 | 株式会社迪思科 | Partition device and alignment method for wafer |
| CN1939661A (en) * | 2005-09-26 | 2007-04-04 | 株式会社迪斯科 | Cutting device |
| JP2008103588A (en) * | 2006-10-20 | 2008-05-01 | Disco Abrasive Syst Ltd | Method of processing wafer |
| CN101174547A (en) * | 2006-10-31 | 2008-05-07 | 株式会社迪思科 | Wafer processing method |
| TW200939364A (en) * | 2008-03-11 | 2009-09-16 | Towa Corp | Method and apparatus for cutting substrate |
| CN101878523A (en) * | 2007-11-28 | 2010-11-03 | 东和株式会社 | Method and device for cutting substrate |
| CN102934216A (en) * | 2010-05-04 | 2013-02-13 | 韩美半导体株式会社 | Method for aligning semiconductor materials |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542223B2 (en) * | 2000-04-14 | 2010-09-08 | 株式会社ディスコ | Cutting equipment |
| KR100973283B1 (en) * | 2003-03-10 | 2010-07-30 | 삼성테크윈 주식회사 | Cutting apparatus and mathod for semiconductor package |
| JP4162535B2 (en) * | 2003-05-09 | 2008-10-08 | Ｔｏｗａ株式会社 | Method and apparatus for cutting sealed substrate |
| JP4796271B2 (en) * | 2003-07-10 | 2011-10-19 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP2005332990A (en) * | 2004-05-20 | 2005-12-02 | Apic Yamada Corp | Cutting apparatus, cutting method, and position detecting method |
| JP2009206362A (en) | 2008-02-28 | 2009-09-10 | Disco Abrasive Syst Ltd | Method of cutting plate-like material |
| SG142402A1 (en) * | 2008-05-02 | 2009-11-26 | Rokko Ventures Pte Ltd | Apparatus and method for multiple substrate processing |
| JP5312857B2 (en) * | 2008-06-30 | 2013-10-09 | Ｔｏｗａ株式会社 | Substrate cutting method and apparatus |
| JP5313022B2 (en) * | 2009-04-09 | 2013-10-09 | 株式会社ディスコ | Workpiece cutting method |
| JP4780356B1 (en) * | 2010-04-20 | 2011-09-28 | Ｔｄｋ株式会社 | Work processing apparatus and method |
| JP2012114126A (en) * | 2010-11-19 | 2012-06-14 | Sharp Corp | Substrate splitting device and method of manufacturing electronic component |
-
2013
- 2013-09-02 JP JP2013181393A patent/JP6218511B2/en active Active
-
2014
- 2014-08-28 KR KR1020140112987A patent/KR101708976B1/en active Application Filing
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006012901A (en) * | 2004-06-22 | 2006-01-12 | Disco Abrasive Syst Ltd | Processing equipment |
| CN1935480A (en) * | 2005-09-20 | 2007-03-28 | 株式会社迪思科 | Partition device and alignment method for wafer |
| JP2007088028A (en) * | 2005-09-20 | 2007-04-05 | Disco Abrasive Syst Ltd | Wafer separation equipment and alignment method of wafer |
| CN1935459A (en) * | 2005-09-22 | 2007-03-28 | 东和株式会社 | Cutting apparatus |
| CN1939661A (en) * | 2005-09-26 | 2007-04-04 | 株式会社迪斯科 | Cutting device |
| JP2008103588A (en) * | 2006-10-20 | 2008-05-01 | Disco Abrasive Syst Ltd | Method of processing wafer |
| CN101174547A (en) * | 2006-10-31 | 2008-05-07 | 株式会社迪思科 | Wafer processing method |
| CN101878523A (en) * | 2007-11-28 | 2010-11-03 | 东和株式会社 | Method and device for cutting substrate |
| TW200939364A (en) * | 2008-03-11 | 2009-09-16 | Towa Corp | Method and apparatus for cutting substrate |
| CN102934216A (en) * | 2010-05-04 | 2013-02-13 | 韩美半导体株式会社 | Method for aligning semiconductor materials |
Also Published As
| Publication number | Publication date |
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| JP6218511B2 (en) | 2017-10-25 |
| KR101708976B1 (en) | 2017-02-21 |
| TWI592267B (en) | 2017-07-21 |
| JP2015050345A (en) | 2015-03-16 |
| TW201515797A (en) | 2015-05-01 |
| KR20150026936A (en) | 2015-03-11 |
| KR20170018866A (en) | 2017-02-20 |
| CN104425369A (en) | 2015-03-18 |
| KR101952494B1 (en) | 2019-02-26 |
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