CN104409642B - Preparation method of perovskite/P-type quantum dot composite solar cell - Google Patents

Preparation method of perovskite/P-type quantum dot composite solar cell Download PDF

Info

Publication number
CN104409642B
CN104409642B CN201410673751.XA CN201410673751A CN104409642B CN 104409642 B CN104409642 B CN 104409642B CN 201410673751 A CN201410673751 A CN 201410673751A CN 104409642 B CN104409642 B CN 104409642B
Authority
CN
China
Prior art keywords
quantum dot
layer
perovskite
type semiconductor
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410673751.XA
Other languages
Chinese (zh)
Other versions
CN104409642A (en
Inventor
田建军
李波
沈婷
曲选辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology Beijing USTB
Original Assignee
University of Science and Technology Beijing USTB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology Beijing USTB filed Critical University of Science and Technology Beijing USTB
Priority to CN201410673751.XA priority Critical patent/CN104409642B/en
Publication of CN104409642A publication Critical patent/CN104409642A/en
Application granted granted Critical
Publication of CN104409642B publication Critical patent/CN104409642B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a preparation method of a perovskite/P-type quantum dot composite solar cell, belonging to the field of solar cells and nanotechnologies. The perovskite/P-type quantum dot composite solar cell disclosed by the invention is composed of a transparent conducting electrode (1), a compact layer (2), an n-type semiconductor mesoporous layer (3), a perovskite-phase light absorbing layer (4), a p-type semiconductor quantum dot layer (5) and a counter electrode (6). A p-type semiconductor quantum dot is Cu2O, CuI, CuInS2, PbS, PbSe or Sb2S3; expensive organic hole-transport material is replaced; therefore, a photon-generated carrier in the solar cell can be effectively separated; composite of electron and holes is reduced; and the filling factor and the photoelectric conversion efficiency are obviously increased. The perovskite/P-type quantum dot composite solar cell disclosed by the invention is high in photoelectric conversion efficiency, simple in preparation process, low in raw material cost and easy to carry out industrialization implementation.

Description

A kind of preparation method of perovskite/p-type quantum dot composite construction solaode
Technical field
The invention belongs to solaode cell art, is related to a kind of perovskite/p-type quantum dot composite construction sun Design of energy battery and preparation method thereof.
Background technology
Solar energy is the inexhaustible renewable and clean energy resource of the mankind, in the effectively utilizes of solar energy, too The solar photovoltaic utilization of positive energy is research field with fastest developing speed in the last few years, most active.Perovskite solaode is every year on average Increase by 3% photoelectric transformation efficiency, cause the highest attention of academia, by science magazines the ten of 2013 years are chosen as One of big Progress ＆ New Products.
The structure of sensitization class solar cell is inherited and developed to perovskite solaode.Tsutomu in 2009 Miyasaka et al. assembles liquid electrolyte structure perovskite solaode, realizes 3.81% photoelectric transformation efficiency (Akihiro Kojima and Tsutomu Miyasaka,et al.JACS,2009,131:6050-6051)；2012 MichaelEt al. replace liquid electrolyte prepare structure of whole solid state perovskite solaode, opto-electronic conversion performance More than 9% (Hui-Seon Kim and Michaelet al.Sci Rep,2012,2:1-7)；With perovskite too It is positive can battery research work further deeply, planar heterojunction perovskite solaode as new breakthrough, by simply having The structure of effect obtains higher photoelectric transformation efficiency, and 2014, YangYang et al. optimized the perovskite of plane junction structure Solaode, 19% (Huanping and YangYang, et al.Science, 2014,345 of breakthrough performance:542- 546).However, these efficient perovskite solaodes are usually used expensive Organic substance (such as spiro- OMeTAD, P3HT etc.) it is the hole transport rate that further improves, in addition it is also necessary to add additive TBP, lithium as hole mobile material Salt etc., has caused the problems such as preparing complicated, stability difference and strong toxicity, is unfavorable for research work.
For the hole mobile material of perovskite solaode, need to possess hole transport rate high, level structure matching, steady Qualitative good and with low cost the features such as.At present, the hole mobile material in the perovskite solaode of report is mainly included Machine thing spiro-OMeTAD, P3HT, PTAA etc. and inorganic matters CuI and CuSCN etc..The Central China University of Science and Technology discloses quasiconductor calcium titanium Ore deposit solaode and preparation method thereof (application number：201410357461.4), one kind is relate to by nano-oxide particles structure Into mesoporous hole collection layer preparation method.Shanghai Inst. of Technical Physics, Chinese Academy of Sciences discloses one kind with inorganic chemical Thing is the perovskite solaode (application number of hole transmission layer：201410121154.6) and with zinc telluridse as hole transmission layer Perovskite solaode (application number：201410120455.7).Organic hole transport material contributes to obtaining efficient Perovskite solar cell device, but need to add multiple additives to improve and expensive, it is unfavorable for research work, and it is inorganic The photoelectric transformation efficiency of hole mobile material still has much room for improvement.Develop and prepare a kind of stable chemical nature, level structure matching And the cheap hole mobile material of preparation cost, the research to perovskite solaode is significant.
The content of the invention
It is an object of the invention to provide a kind of design of perovskite/p-type quantum dot composite construction solaode And preparation method thereof, expensive organic hole transport material is substituted with p-type semiconductor quanta point material, solar energy can be efficiently separated Photo-generated carrier in battery, reduction electronics is compound with hole, significantly improves fill factor, curve factor and photoelectric transformation efficiency.
A kind of preparation method of perovskite/p-type quantum dot composite construction solaode, perovskite/p-type quantum dot is combined Structure solaode is by transparency conductive electrode (1), compacted zone (2), the mesoporous layer of n-type semiconductor (3), Perovskite Phase light-absorption layer (4), p-type semiconductor quantum dot layer (5) and electrode (6) is constituted, concrete preparation process is as follows：
A () prepares compacted zone (2) in transparency conductive electrode (1)：Using spin coating proceeding, with 2000～5000 revs/min The oxide precursor liquid solution of 0.05～0.3 molar concentration is coated in transparency conductive electrode (1), 300～500 degrees Celsius of Jing After sintering, the oxide compacting layer (2) that thickness is 10～80 nanometers is obtained；
The preparation of the mesoporous layer of (b) n-type semiconductor (3)：By nanometer n-type semiconductor oxide that particle diameter is 20～50 by quality Than 1:2～1:5 are scattered in dehydrated alcohol, are covered on compacted zone (2) with 2000～6000 revs/min of spin coatings, and Jing 300～ After 500 degrees Celsius of sintering, the mesoporous layer of the n-type semiconductor (3) that thickness is 150～800 nanometers is obtained；
The preparation of (c) Perovskite Phase light-absorption layer (4)：By lead chloride (PbCl2) or lead iodide (PbI2) and methylamino iodine (CH3NH3I) in molar ratio 1:1～1:4 are dissolved in N-N dimethylformamides (DMF) solvent, before forming 0.5～1.5 molar concentration Solution is driven, is covered on the mesoporous layer of quasiconductor (3) with 1000～5000 revs/min of spin coatings, the degrees Centigrades 10 of Jing 70～100～ After 60 minutes, the organic inorganic hybridization thing CH that overburden cover is 50～500 nanometers is obtained3NH3PbI(3-x)ClxOr CH3NH3PbI3 Perovskite Phase light-absorption layer (4)；
The preparation of (d) p-type semiconductor quantum dot layer (5)：By the p-type quantum dot colloid solution of 0.05～1.0 molar concentration, Covered on calcium titanium ore bed (4) with 1000～5000 revs/min of kind spin coatings, 50～100 DEG C of Jing is heated 5～40 minutes, obtains thickness For 5～500 nanometers of p-type semiconductor quantum dot layer (5)；
E () is to be to electrode in quantum dot layer surface (5) evaporation a layer thickness using vacuum thermal evaporation or electron beam evaporation plating 50～100 nanometers of golden or silver is to electrode (6).
Transparency conductive electrode is fluorine doped tin oxide (FTO) or indium doped tin oxide (ITO) transparent conducting glass.
The oxide precursor solution for preparing compacted zone is two metatitanic acid diisopropyl ester butanol solutions or zinc acetate ethylene glycol first Ethereal solution.
The mesoporous layer material of n-type semiconductor is titanium dioxide (TiO2) or Zinc Oxide (ZnO) conductor oxidate.
P-type semiconductor quanta point material is Cu2O、CuI、CuInS2, PbS, PbSe or Sb2S3。
The advantage of the inventive method
The present invention instead of the organic of costliness using preparation process is simple and p-type semiconductor quanta point material with low cost Hole mobile material, is a kind of preferable hole mobile material.Major advantage is as follows：
1) by the band gap for controlling the size of p-type quantum dot to regulate and control quantum dot, the energy level with Perovskite Phase light absorbent Matching, constitutes the p-i-n junction solaode of similar sandwich；
2) p-type semiconductor quanta point material is fully infiltrated in the hole of perovskite material, is formed in interface and is closely connect Touch, be conducive to the separation of carrier, reduce the compound of electronics and hole, significantly improve fill factor, curve factor；
3) p-type quanta point material has the advantages that band gap is controllable, is easy to modification, preparation process is simple and good stability, Reduce simplifying preparation method while research cost.
Description of the drawings
Fig. 1 is the structural representation of perovskite/p-type quantum dot composite construction solaode：1 be transparency conductive electrode, 2 It is the mesoporous layer of n-type semiconductor, 4 is Perovskite Phase light-absorption layer, 5 is p-type semiconductor quantum dot layer, 6 is to electrode for compacted zone, 3；
Fig. 2 is the SEM photograph of perovskite/p-type quantum dot composite construction solaode prepared by the present invention.
Fig. 3 is that the current-voltage (I-V) of perovskite/p-type quantum dot composite construction solaode prepared by the present invention is bent Line.
Specific embodiment
Embodiment 1
A) successively deionized water, acetone and EtOH Sonicate cleaning FTO or ITO electro-conductive glass is each 15 minutes, uses after drying Plasma cleaning is processed 15 minutes.Configuration concentration be the n-butyl alcohol precursor solution of the two metatitanic acid diisopropyl esters of 0.05～0.3M or The ethylene glycol monomethyl ether precursor solution of zinc acetate, is added drop-wise on FTO or ITO electro-conductive glass, with 2000～5000 after mix homogeneously Rev/min spin coating 20～50 seconds, sinters 10～50 minutes under being placed in 500 degrees Celsius after drying under 70 degrees Celsius；B) grain is selected Footpath is 20 nanometers of ZnO or TiO21 is pressed with dehydrated alcohol：3.5 mass ratioes dilute, using spin coating proceeding, with 5000 revs/min of rotations Apply 30 seconds, sinter 30 minutes under being placed in 500 degrees Celsius after drying under 70 degrees Celsius；C) by PbCl2With CH3NH3I is with mol ratio 1:3 are dissolved in DMF solution, form PbCl2Concentration is the precursor solution of 0.8M, using spin coating proceeding, is revolved with 2000 revs/min Apply 30 seconds, heat 30 minutes under 100 degrees Celsius；D) by concentration for 0.5M Cu2O quantum dot colloids utilize spin coating proceeding, with 2000 revs/min of spin coatings 30 seconds, dry at 50 c；E) specific mask is selected to be covered in above-mentioned sample surfaces, profit With vacuum thermal evaporation machine gold that a layer thickness is 60 nanometers is deposited with to electrode.
Impact of the different compacted zones of table 1 to solar cell properties
Embodiment 2
A) successively deionized water, acetone and EtOH Sonicate cleaning FTO or ITO electro-conductive glass is each 15 minutes, uses after drying Plasma cleaning is processed 15 minutes.Configuration concentration is the n-butyl alcohol precursor solution of the two metatitanic acid diisopropyl esters of 0.15M, mixes equal It is added drop-wise to after even on FTO electro-conductive glass, with 2000 revs/min of spin coatings 30 seconds, after drying under 70 degrees Celsius 500 degrees Celsius is placed in Lower sintering 10～50 minutes；B) from the TiO that particle diameter is 20 nanometers2Or ZnO presses 1 with dehydrated alcohol：2～1：5 mass ratioes dilute, Using spin coating proceeding, with 2000～6000 revs/min of spin coatings 30 seconds, burn under being placed in 500 degrees Celsius after drying under 70 degrees Celsius Knot 30 minutes；C) by PbCl2With CH3NH3I is with mol ratio 1:3 are dissolved in DMF solution, form PbCl2Concentration is the forerunner of 0.8M Liquid solution, using spin coating proceeding, with 2000 revs/min of spin coatings 30 seconds, heats 30 minutes under 100 degrees Celsius；D) it is by concentration The Cu of 0.5M2O quantum dot colloids utilize spin coating proceeding, with 2000 revs/min of spin coatings 30 seconds, dry at 50 c；E) select Select specific mask and be covered in above-mentioned sample surfaces, gold that a layer thickness is 60 nanometers is deposited with to electricity using vacuum thermal evaporation machine Pole.
Impact of the different n-type semiconductors of table 2 to solar cell properties
Embodiment 3
A) successively deionized water, acetone and EtOH Sonicate cleaning FTO electro-conductive glass is each 15 minutes, and plasma is used after drying Cleaning treatment 15 minutes.Configuration concentration is the n-butyl alcohol precursor solution of the two metatitanic acid diisopropyl esters of 0.15M, drips after mix homogeneously It is added on FTO electro-conductive glass, with 2000 revs/min of spin coatings 30 seconds, sinters under being placed in 500 degrees Celsius after drying under 70 degrees Celsius 10～50 minutes；B) from the TiO that particle diameter is 20 nanometers21 is pressed with dehydrated alcohol：3.5 mass ratioes dilute, using spin coating proceeding, With 5000 revs/min of spin coatings 30 seconds, sinter 30 minutes under being placed in 500 degrees Celsius after drying under 70 degrees Celsius；C) (1) spin coating Method：Configuration concentration is the PbCl of 0.8M2With the CH of 2.4M3NH3The DMF solution of I, using spin coating proceeding, with 2000 revs/min of rotations Apply 30 seconds, mixed solution is coated uniformly on mesoporous layer, heat 10～60 minutes under 100 degrees Celsius；(2) solwution method：Profit With spin-coating method, spin coating a layer thickness is 10～500 nanometers of PbI on mesoporous layer2, after heating 30 minutes under 70 degrees Celsius, use Aqueous isopropanol pre-soaking 1～2 second, is quickly transferred to the CH that concentration is 0.06 molar concentration3NH3In I aqueous isopropanols, treat anti- Cleaning, drying are taken out after answering 25 seconds, is heated 30 minutes under 70 degrees Celsius；D) by concentration for 0.5M Cu2O quantum dots colloid profit With spin coating proceeding, with 2000 revs/min of spin coatings 30 seconds, dry at 50 c；E) specific mask is selected to be covered in Sample surfaces are stated, gold that a layer thickness is 60 nanometers is deposited with to electrode using vacuum thermal evaporation machine.
Impact of the attracting photosphere preparation technology of the different perovskites of table 3 to solar cell properties
Embodiment 4
A) successively deionized water, acetone and EtOH Sonicate cleaning FTO electro-conductive glass is each 15 minutes, and plasma is used after drying Cleaning treatment 15 minutes.Configuration concentration is the n-butyl alcohol precursor solution of the two metatitanic acid diisopropyl esters of 0.15M, drips after mix homogeneously It is added on FTO electro-conductive glass, with 2000 revs/min of spin coatings 30 seconds, sinters under being placed in 500 degrees Celsius after drying under 70 degrees Celsius 10～50 minutes；B) from the TiO that particle diameter is 20 nanometers21 is pressed with dehydrated alcohol：3.5 mass ratioes dilute, using spin coating proceeding, With 5000 revs/min of spin coatings 30 seconds, sinter 30 minutes under being placed in 500 degrees Celsius after drying under 70 degrees Celsius；C) by PbCl2With CH3NH3I is with mol ratio 1:3 are dissolved in DMF solution, form PbCl2Concentration is the precursor solution of 0.8M, using spin coating proceeding, With 2000 revs/min of spin coatings 30 seconds, heat 30 minutes under 100 degrees Celsius；D) by Cu that molar concentration is 0.05～1.02O、 CuI, CuInS, PbS, PbSe and Sb2S3Quantum dot colloid utilizes spin coating proceeding, with 1000～5000 rpms of rotating speed spin coating 10～60 seconds, and dry at 50 c；E) select specific mask to be covered in above-mentioned sample surfaces, steamed using Vacuum Heat Plating machine is deposited with gold that a layer thickness is 60 nanometers to electrode.
Impact of the different p-type semiconductor quanta point materials of table 4 to solar cell properties

Claims (3)

1. the preparation method of a kind of perovskite/p-type quantum dot composite construction solaode, it is characterised in that be by electrically conducting transparent Electrode (1), compacted zone (2), the mesoporous layer of n-type semiconductor (3), Perovskite Phase light-absorption layer (4), p-type semiconductor quantum dot layer (5) and Electrode (6) is constituted, concrete preparation process is as follows：
A () prepares compacted zone (2) in transparency conductive electrode (1)：Using spin coating proceeding, will with 2000～5000 revs/min The oxide precursor liquid solution of 0.05～0.3 molar concentration is coated in transparency conductive electrode (1), 300～500 degrees Celsius of burnings of Jing After knot, the oxide compacting layer (2) that thickness is 10～80 nanometers is obtained；
The preparation of the mesoporous layer of (b) n-type semiconductor (3)：By the n-type semiconductor oxide in mass ratio 1 that particle diameter is 20～50 nanometers: 2～1:5 are scattered in dehydrated alcohol, are covered on compacted zone (2) with 2000～6000 revs/min of spin coatings, and Jing 300～500 takes the photograph After family name's degree sintering, the mesoporous layer of the n-type semiconductor (3) that thickness is 150～800 nanometers is obtained；
The preparation of (c) Perovskite Phase light-absorption layer (4)：By lead chloride (PbCl2) or lead iodide (PbI2) and methylamino iodine (CH3NH3I) In molar ratio 1:1～1:4 are dissolved in N-N dimethylformamides (DMF) solvent, form 0.5～1.5 molar concentration precursor aqueous solution, It is covered on the mesoporous layer of quasiconductor (3) with 1000～5000 revs/min of spin coatings, 70～100 degrees Centigrades of Jing 10～60 minutes Afterwards, the organic inorganic hybridization thing CH that overburden cover is 50～500 nanometers is obtained3NH3PbI(3-x)ClxOr CH3NH3PbI3Perovskite Phase light-absorption layer (4)；
The preparation of (d) p-type semiconductor quantum dot layer (5)：By the p-type quantum dot colloid solution of 0.05～1.0 molar concentration, with 1000～5000 revs/min of kind spin coatings are covered on calcium titanium ore bed (4), and 50～100 DEG C of Jing is heated 5～40 minutes, and it is 5 to obtain thickness ～500 nanometers of p-type semiconductor quantum dot layer (5)；
(e) be to electrode using vacuum thermal evaporation or electron beam evaporation plating quantum dot layer surface (5) evaporation a layer thickness be 50～ 100 nanometers of golden or silver is to electrode (6)；
Wherein transparency conductive electrode is fluorine doped tin oxide (FTO) or indium doped tin oxide (ITO) transparent conducting glass；
The oxide precursor solution for preparing compacted zone is that two metatitanic acid diisopropyl ester butanol solutions or zinc acetate ethylene glycol monomethyl ether are molten Liquid.
2. the preparation method of a kind of perovskite according to claim 1/p-type quantum dot composite construction solaode, its It is characterised by, the mesoporous layer material of n-type semiconductor is titanium dioxide (TiO2) or Zinc Oxide (ZnO) conductor oxidate.
3. the preparation method of a kind of perovskite according to claim 1/p-type quantum dot composite construction solaode, its It is characterised by, p-type semiconductor quanta point material is Cu2O、CuI、CuInS2, PbS, PbSe or Sb2S3。
CN201410673751.XA 2014-11-21 2014-11-21 Preparation method of perovskite/P-type quantum dot composite solar cell Expired - Fee Related CN104409642B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410673751.XA CN104409642B (en) 2014-11-21 2014-11-21 Preparation method of perovskite/P-type quantum dot composite solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410673751.XA CN104409642B (en) 2014-11-21 2014-11-21 Preparation method of perovskite/P-type quantum dot composite solar cell

Publications (2)

Publication Number Publication Date
CN104409642A CN104409642A (en) 2015-03-11
CN104409642B true CN104409642B (en) 2017-04-26

Family

ID=52647254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410673751.XA Expired - Fee Related CN104409642B (en) 2014-11-21 2014-11-21 Preparation method of perovskite/P-type quantum dot composite solar cell

Country Status (1)

Country Link
CN (1) CN104409642B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201513366D0 (en) * 2015-07-29 2015-09-09 Univ Ulster Photovoltaic device
CN105098080A (en) * 2015-08-17 2015-11-25 电子科技大学 Method for manufacturing organic and inorganic perovskite crystal film
DE112015006988T8 (en) * 2015-10-02 2018-07-05 The Governing Council Of The University Of Toronto Quantum dot based optoelectronic device
CN105609643B (en) * 2015-12-21 2017-12-05 永春新盛环保科技有限公司 A kind of Ca-Ti ore type solar cell and preparation method
CN105576150B (en) * 2015-12-22 2017-12-19 成都新柯力化工科技有限公司 The Ca-Ti ore type solar cell and preparation method of a kind of quantum dot size graded
CN106129252B (en) * 2016-07-18 2018-06-19 武汉大学 Perovskite solar cell based on Spiro-OMeTAD/PbS composite hole transporting layers and preparation method thereof
CN106384767B (en) * 2016-11-18 2019-07-09 Tcl集团股份有限公司 Light emitting diode with quantum dots and preparation method thereof and illuminating module, display device
CN106848062B (en) * 2016-12-29 2019-08-23 许昌学院 Copper-cladding Aluminum Bar perovskite thin film, in-situ preparation method and without hole transmission layer solar cell device
CN107141221A (en) * 2017-05-11 2017-09-08 北京大学深圳研究生院 A kind of perovskite structural material and preparation method thereof, application
CN107287656B (en) * 2017-06-13 2018-02-27 华中科技大学 A kind of method of III V races quantum dot induced growth perovskite crystal
CN107267930A (en) * 2017-07-21 2017-10-20 张治国 A kind of TiO based on electron beam evaporation technique2High transmittance high conductivity method for manufacturing thin film
CN108054285B (en) * 2017-12-12 2020-06-05 深圳市华星光电技术有限公司 Preparation method of quantum dot film, electroluminescent device and preparation method thereof
CN107871821A (en) * 2017-12-18 2018-04-03 湖南师范大学 A kind of perovskite thin film solar cell using antimony selenide as conductive material and preparation method thereof
CN113471361B (en) * 2021-05-12 2022-10-25 西安交通大学 Copper indium selenium quantum dot modified perovskite film and preparation method and application thereof
CN114180538B (en) * 2021-11-29 2023-09-26 江苏大学 Sensitization method of P-type PbSe photoelectric film
CN116568110B (en) * 2023-05-10 2024-01-26 天津大学 Hole transport layer material, preparation method and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346018A (en) * 2013-06-26 2013-10-09 中国科学院青岛生物能源与过程研究所 Iodide solar cell prepared through solid-liquid reactions and provided with perovskite structures
CN104157788A (en) * 2014-08-19 2014-11-19 武汉大学 Perovskite film photovoltaic cell based on SnO2 and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2693503A1 (en) * 2012-08-03 2014-02-05 Ecole Polytechnique Fédérale de Lausanne (EPFL) Organo metal halide perovskite heterojunction solar cell and fabrication thereof
MY170170A (en) * 2012-09-18 2019-07-09 Univ Oxford Innovation Ltd Optoelectonic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346018A (en) * 2013-06-26 2013-10-09 中国科学院青岛生物能源与过程研究所 Iodide solar cell prepared through solid-liquid reactions and provided with perovskite structures
CN104157788A (en) * 2014-08-19 2014-11-19 武汉大学 Perovskite film photovoltaic cell based on SnO2 and preparation method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
A hybrid lead iodide perovskite and lead sulfide QD heterojunction solar cell to obtain a panchromatic response;Lioz Etgar等;《Journal of Materials Chemistry A》;20140625;参见11586页右栏最后1段至第11588左栏倒数第2段，11588页右栏第2段至第11589页左栏第3段 *
Incorporation of Cl into Sequentially deposited lead halide perovskite films for highly efficient mesoporous solar cells;Sabba Dharani等;《Nanoscale》;20140916;第13858页右栏最后1段至13859页左栏第1段 *
钙钛矿太阳能电池：光伏领域的新希望;魏静,等;《中国科学》;20140613;第44卷(第8期);全文 *

Also Published As

Publication number Publication date
CN104409642A (en) 2015-03-11

Similar Documents

Publication Publication Date Title
CN104409642B (en) Preparation method of perovskite/P-type quantum dot composite solar cell
CN103746078B (en) Perovskite solar cell and preparation method thereof
CN106558650B (en) A kind of preparation method of flexible copper indium gallium selenide/perovskite lamination solar cell
CN104124291B (en) A kind of perovskite solar cell and preparation method thereof
CN103872248B (en) Perovskite thin-film photovoltaic cell and manufacturing method thereof
CN104022225B (en) High efficiency, low cost CIGS prepared by a kind of whole soln method/perovskite double-junction solar light cell
CN103367512B (en) A kind of solar cell based on inorganic bulk heterojunction and preparation method thereof
CN104966781B (en) A kind of perovskite nanofiber film solar cell and preparation method thereof
CN105047826B (en) A kind of perovskite solar cell that cadmium sulfide is mixed in calcium titanium ore bed and preparation method thereof
CN104993059B (en) A kind of silicon substrate perovskite heterojunction solar battery and preparation method thereof
CN104091889A (en) Semi-conductor perovskite solar cell and preparing method thereof
CN107123693B (en) Efficient CdTe nanocrystalline solar cell with high-transparency window layer material based on solution method processing and preparation method thereof
CN110350089A (en) Bi2O2S modifies SnO2The perovskite solar battery and preparation method of electron transfer layer
CN102610687A (en) p-CuO-n-ZnO solar cell and preparation method of p-CuO-n-ZnO solar cell
CN105568313B (en) Branched semiconductor nano heterojunction photovoltaic pole materials of 3D and preparation method thereof
CN107482120A (en) A kind of perovskite battery and preparation method based on composite electron transport layer
Chen et al. ZnO-based electron transporting layer for perovskite solar cells
CN106128772B (en) A kind of preparation method of vulcanized lead quantum dot photovoltaic battery
CN102723208A (en) Preparation method of composite nanowire array with one-dimensional ZnO(zinc oxide)-TiO2(titanium dioxide) core-shell structure
KR101694803B1 (en) Perovskite solar cells comprising metal nanowire as photoelectrode, and the preparation method thereof
CN102254702A (en) Composite light anode material and application thereof to dye sensitized cell preparation
CN112117383B (en) Structure-adjustable electron transport layer and preparation method thereof, and solar cell and preparation method thereof
CN105552230A (en) Perovskite monocrystal substrate based solar cell
CN107887475A (en) Preparation method of tungsten oxide electron transfer layer and products thereof and application
CN108023018A (en) The preparation method of inversion perovskite solar cell based on the continuously adjustable control of band gap

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170426

Termination date: 20201121

CF01 Termination of patent right due to non-payment of annual fee