CN104404472A - Magnetron sputtering coating vacuum chamber temperature control door and application method thereof - Google Patents
Magnetron sputtering coating vacuum chamber temperature control door and application method thereof Download PDFInfo
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- CN104404472A CN104404472A CN201410737865.6A CN201410737865A CN104404472A CN 104404472 A CN104404472 A CN 104404472A CN 201410737865 A CN201410737865 A CN 201410737865A CN 104404472 A CN104404472 A CN 104404472A
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Abstract
The invention relates to a magnetron sputtering coating vacuum chamber temperature control door and an application method thereof. The magnetron sputtering coating vacuum chamber temperature control door comprises a temperature control door, a long heating module, a long heating module anode, a long heating module cathode, a rectangular heating module, an anode and cathode input and output port and a positioner. The magnetron sputtering coating vacuum chamber temperature control door and the application method thereof have the benefits that a heating structure and a heating method are simple, the design is scientific and reasonable, the use is convenient, and the operation is easy and quick; in the large-scale continuous production of an indium tin oxide (ITO) film, through controlling the heating temperatures of all parts of a magnetron sputtering maglev vehicle target, the ITO film can obtain resistance with good overall uniformity, the resistivity reaches 2*10<-4> omega/cm, and the transmittance reaches above 90 percent; the product quality of the ITO film is obviously improved, the working efficiency is greatly improved, the production cost is saved, the service life is prolonged by more than two times, and the effects of energy conservation and environment friendless are realized.
Description
Technical field
The present invention relates to ito film heating unit, especially a kind of magnetron sputtering plating vacuum chamber temperature control door and application method.
Background technology
ITO nesa coating and doped indium tin oxide film, being called for short ito thin film, is the abbreviation of Indium Tin Oxide.Ito thin film is a kind of n-type semiconductor, it has physics, the chemical property of many excellences, such as higher visible light transmissivity and electric conductivity, with most of substrate, there is good tack, stronger hardness and good antiacid, alkali and organic solvent ability, therefore, be widely used in photoelectric device.Such as: liquid-crystal display (LCD), plasma display (PDP), electrode is given out light indicating meter (EL/OLED), touch-screen, in solar cell and other electronic instruments.
At present, the preparation method of ito thin film is a lot, common are: spraying method, vacuum vapor deposition method, chemical vapour deposition, reactive ion injection and magnetron sputtering etc.In these preparation methods, it is the most general that current magnetron sputtering method is.Due to magnetron sputtering, there is good controllability and be easy to the film of acquisition Large-Area-Uniform, being therefore widely used in the preparation of ito thin film in display device.Magnetron sputtering prepares ito thin film, direct current (DC) power supply is mainly utilized to produce plasma body in Ar sputter gas and fully oxidized Ar/O2 mixed gas, to In-Sn alloys target or In2O3, SnO2 oxide target or ceramic target are bombarded, to obtain ito thin film on various substrates.In preparation process condition is as target, Theil indices, sedimentation rate, underlayer temperature, sputtering power and subsequent anneal process, all have great impact to the photoelectric characteristic of ito thin film; But existing technology is low-temperature growth ito thin film poor optical properties on a glass substrate, film oxidation is incomplete, and structure is imperfect; Especially to the ito thin film crystalline structure under temperature condition not of the same race and resistance, regulable control temperature can not carry out the homogeneity of controlling resistance accurately and effectively, reduce the quality product of ito thin film, and the working efficiency of producing, add production cost, affect the work-ing life of indicating meter and instrument; Be the bottleneck in the production development of this area, the demand in user and market can not be met.
In view of the foregoing, existing ito thin film heating unit and method thereof need innovation.
Summary of the invention
The object of the invention is, in order to overcome deficiency of the prior art, to provide a kind of magnetron sputtering plating vacuum chamber temperature control door and application method, the structure of heating and method thereof are simple, and design science is reasonable, easy to use, processing ease is quick; Guarantee to produce in indium tin oxides film in Large Scale and Continuous, by controlling the Heating temperature to each position of magnetron sputtering magnetically supported vehicle target, the resistance making ito thin film obtain justifying to have good uniformity, resistivity reaches 2 × 10-4 Ω/cm, transmitance reaches more than 90%; Significantly improve the quality product of ito thin film, greatly increase work efficiency, save production cost, increase the service life more than 2 times, energy-conserving and environment-protective.
The present invention to achieve these goals, adopt following technical scheme: a kind of magnetron sputtering plating vacuum chamber temperature control door and application method, be by: temperature control door, long heating module, long heating module positive pole, long heating module negative pole, rectangle heating module, positive and negative electrode input/output port, steady arm are formed; The middle part of temperature control door side vertically arranges long heating module group, and the zygomorphy of long heating module group arranges long a pair heating module, is symmetrical arranged a pair rectangle heating module group between long a pair heating module and long heating module group.
Described long heating module group is laterally set up in parallel by least two block length heating modules and forms, and long heating module upper center arranges long heating module positive pole and long heating module negative pole.
Described rectangle heating module group is vertically set up in parallel by least four pieces of rectangle heating modules and forms, and every block rectangle heating module side arranges positive and negative electrode input and output hole, arranges rectangle heating module positive pole and rectangle heating module negative pole in positive and negative electrode input and output hole.
Described every block length heating module and every block rectangle heating module are all fixed by steady arm and temperature control door.
Described every block length heating module and every block rectangle heating module are corresponding setting at least two S shape heating tubes in U-shaped heating tube and form.
In continuity vacuum magnetron sputtering coating film canyon, long heating module positive pole is connected with the positive and negative electrode of power supply respectively with long heating module negative pole, rectangle heating module positive pole in the positive and negative electrode input and output hole of rectangle heating module side is connected with the positive and negative electrode of power supply respectively with rectangle heating module negative pole, after every block length heating module in temperature control door and every block rectangle heating module are energized, electric energy is converted to heat energy and is outwards dispelled the heat by heating tube, the each position of the ito thin film that car body in suspension operation is installed is heated, every block length heating module is controlled and every block rectangle heating module adopts different Heating temperatures by industrial computer, different temperature is adopted to heat to the different sites of ito thin film on car body in suspension operation, car body is by after continuity vacuum magnetron sputtering coating film canyon, naturally cool to normal temperature state, the resistivity of obtained ito thin film finished product reaches 2 × 10-4 Ω/cm, transmitance reaches more than 90%.
Described long heating module and the temperature setting range of rectangle heating module are 50-400 DEG C, according to the different size of ito thin film, different Heating temperatures can be adopted to the long heating module of different positions in temperature control door and rectangle heating module, make the Heating temperature of ito thin film consistent.
The invention has the beneficial effects as follows: the structure of heating and method thereof are simple, design science is reasonable, easy to use, processing ease is quick; Guarantee to produce in indium tin oxides film in Large Scale and Continuous, by controlling the Heating temperature to each position of magnetron sputtering magnetically supported vehicle target, the resistance making ito thin film obtain justifying to have good uniformity, resistivity reaches 2 × 10-4 Ω/cm, transmitance reaches more than 90%; Significantly improve the quality product of ito thin film, greatly increase work efficiency, save production cost, increase the service life more than 2 times, energy-conserving and environment-protective.
The present invention, through long-term great many of experiments, optimizes as after these processing parameters such as Theil indices, sedimentation rate, underlayer temperature, sputtering power and subsequent anneal process in target, can obtain the fine ITO film with higher electric conductivity and visible light transmissivity.
The resistivity of the ito thin film that the present invention is prepared on a glass substrate reaches 2 × 10-4 Ω/cm and transmitance reaches more than 90%.So with magnetron sputtering technique on a glass substrate, good ITO transparent conductive film can be prepared, while it is prepared, we conduct in-depth research the resistance situation preparing film under different base temperature (150 DEG C-350 DEG C) condition, in prior art on a glass substrate low-temperature growth ito thin film poor optical properties time, it is often general that to be interpreted as film oxidation incomplete, structure is imperfect, the present invention through experiments a large amount of for a long time, therefore in the research and development achievement that must make new advances to the ito thin film crystalline structure under temperature condition not of the same race and resistance.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the invention will be further described:
Fig. 1 is, general assembly structural representation;
In Fig. 1: temperature control door 1, long heating module 2, long heating module positive pole 2-2, long heating module negative pole 2-3, rectangle heating module 3, positive and negative electrode input/output port 3-2, steady arm 4.
Embodiment
Below in conjunction with embodiment and embodiment, the present invention is described in further detail:
Embodiment 1
The middle part of temperature control door 1 side vertically arranges long heating module group, and the zygomorphy of long heating module group arranges long a pair heating module 2, is symmetrical arranged a pair rectangle heating module group between long a pair heating module 2 and long heating module group.
Embodiment 2
Described long heating module group is laterally set up in parallel by least two block length heating modules 2 and forms, and long heating module 2 upper center arranges long heating module positive pole 2-2 and long heating module negative pole 2-3.
Embodiment 3
Described rectangle heating module group is vertically set up in parallel by least four pieces of rectangle heating modules 3 and forms, every block rectangle heating module 3 side arranges positive and negative electrode input and output hole 3-2, arranges rectangle heating module positive pole and rectangle heating module negative pole in positive and negative electrode input and output hole 3-2.
Embodiment 4
Described every block length heating module 2 and every block rectangle heating module 3 are all fixed by steady arm 4 and temperature control door 1.
Embodiment 5
Described every block length heating module 2 and every block rectangle heating module 3 are corresponding setting at least two S shape heating tubes in U-shaped heating tube and form.
Embodiment 6
In continuity vacuum magnetron sputtering coating film canyon, long heating module positive pole 2-2 is connected with the positive and negative electrode of power supply respectively with long heating module negative pole 2-3, rectangle heating module positive pole in the positive and negative electrode input and output hole 3-2 of rectangle heating module 3 side is connected with the positive and negative electrode of power supply respectively with rectangle heating module negative pole, after every block length heating module 2 in temperature control door 1 and every block rectangle heating module 3 are energized, electric energy is converted to heat energy and is outwards dispelled the heat by heating tube, the each position of the ito thin film that car body in suspension operation is installed is heated, every block length heating module 2 is controlled and every block rectangle heating module 3 adopts different Heating temperatures by industrial computer, different temperature is adopted to heat to the different sites of ito thin film on car body in suspension operation, car body is by after continuity vacuum magnetron sputtering coating film canyon, naturally cool to normal temperature state, the resistivity of obtained ito thin film finished product reaches 2 × 10-4 Ω/cm, transmitance reaches more than 90%.
Embodiment 7
Described long heating module 2 and the temperature setting range of rectangle heating module 3 are 50-400 DEG C, according to the different size of ito thin film, different Heating temperatures can be adopted to the long heating module 2 of different positions in temperature control door 1 and rectangle heating module 3, make the Heating temperature of ito thin film consistent.
Claims (7)
1. a magnetron sputtering plating vacuum chamber temperature control door, be by: temperature control door (1), long heating module (2), long heating module positive pole (2-2), long heating module negative pole (2-3), rectangle heating module (3), positive and negative electrode input/output port (3-2), steady arm (4) are formed; It is characterized in that: the middle part of temperature control door (1) side vertically arranges long heating module group, the zygomorphy of long heating module group arranges long a pair heating module (2), is symmetrical arranged a pair rectangle heating module group between long a pair heating module (2) and long heating module group.
2. a kind of magnetron sputtering plating vacuum chamber temperature control door according to claim 1, it is characterized in that: described long heating module group is laterally set up in parallel by least two block length heating modules (2) and forms, and long heating module (2) upper center arranges long heating module positive pole (2-2) and long heating module negative pole (2-3).
3. a kind of magnetron sputtering plating vacuum chamber temperature control door according to claim 1, it is characterized in that: described rectangle heating module group is vertically set up in parallel by least four pieces of rectangle heating modules (3) and forms, every block rectangle heating module (3) side arranges positive and negative electrode input and output hole (3-2), arranges rectangle heating module positive pole and rectangle heating module negative pole in positive and negative electrode input and output hole (3-2).
4. a kind of magnetron sputtering plating vacuum chamber temperature control door according to claim 1 or 2 or 3, is characterized in that: described every block length heating module (2) and every block rectangle heating module (3) are all fixed by steady arm (4) and temperature control door (1).
5. a kind of magnetron sputtering plating vacuum chamber temperature control door according to claim 1 or 2 or 3, is characterized in that: described every block length heating module (2) and every block rectangle heating module (3) are corresponding setting at least two S shape heating tubes in U-shaped heating tube and form.
6. the application method of a magnetron sputtering plating vacuum chamber temperature control door, it is characterized in that: in continuity vacuum magnetron sputtering coating film canyon, long heating module positive pole (2-2) is connected with the positive and negative electrode of power supply respectively with long heating module negative pole (2-3), rectangle heating module positive pole in the positive and negative electrode input and output hole (3-2) of rectangle heating module (3) side is connected with the positive and negative electrode of power supply respectively with rectangle heating module negative pole, after every block length heating module (2) in temperature control door (1) and every block rectangle heating module (3) are energized, electric energy is converted to heat energy and is outwards dispelled the heat by heating tube, the each position of the ito thin film that car body in suspension operation is installed is heated, every block length heating module (2) is controlled and every block rectangle heating module (3) adopts different Heating temperatures by industrial computer, different temperature is adopted to heat to the different sites of ito thin film on car body in suspension operation, car body is by after continuity vacuum magnetron sputtering coating film canyon, naturally cool to normal temperature state, the resistivity of obtained ito thin film finished product reaches 2 × 10-4 Ω/cm, transmitance reaches more than 90%.
7. the application method of a kind of magnetron sputtering plating vacuum chamber temperature control door according to claim 6, it is characterized in that: described long heating module (2) and the temperature setting range of rectangle heating module (3) are 50-400 DEG C, according to the different size of ito thin film, different Heating temperatures can be adopted to the long heating module (2) of the upper different positions of temperature control door (1) and rectangle heating module (3), make the Heating temperature of ito thin film consistent.
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| CN201410737865.6A CN104404472B (en) | 2014-11-29 | 2014-11-29 | A kind of magnetron sputtering plating vacuum chamber temperature control door and application process |
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| CN104404472B CN104404472B (en) | 2017-08-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242338A (en) * | 2021-12-16 | 2022-03-25 | 长春博信光电子有限公司 | Method for improving resistance value of ITO film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1195378A (en) * | 1995-09-06 | 1998-10-07 | 美国3M公司 | Substrate fixture |
| US20100166947A1 (en) * | 2008-12-26 | 2010-07-01 | Canon Anelva Corporation | Substrate processing apparatus, deposition method, and electronic device manufacturing method |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
| CN204265844U (en) * | 2014-11-29 | 2015-04-15 | 洛阳康耀电子有限公司 | A kind of magnetron sputtering plating vacuum chamber temperature control door |
-
2014
- 2014-11-29 CN CN201410737865.6A patent/CN104404472B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1195378A (en) * | 1995-09-06 | 1998-10-07 | 美国3M公司 | Substrate fixture |
| US20100166947A1 (en) * | 2008-12-26 | 2010-07-01 | Canon Anelva Corporation | Substrate processing apparatus, deposition method, and electronic device manufacturing method |
| CN101962759A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | PECVD system with internal heater |
| CN204265844U (en) * | 2014-11-29 | 2015-04-15 | 洛阳康耀电子有限公司 | A kind of magnetron sputtering plating vacuum chamber temperature control door |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242338A (en) * | 2021-12-16 | 2022-03-25 | 长春博信光电子有限公司 | Method for improving resistance value of ITO film |
| CN114242338B (en) * | 2021-12-16 | 2024-02-06 | 长春博信光电子有限公司 | Method for improving resistance value of ITO film |
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