CN104377268A - Solar cell panel and crystal silicon wafer thereof - Google Patents
Solar cell panel and crystal silicon wafer thereof Download PDFInfo
- Publication number
- CN104377268A CN104377268A CN201410308401.3A CN201410308401A CN104377268A CN 104377268 A CN104377268 A CN 104377268A CN 201410308401 A CN201410308401 A CN 201410308401A CN 104377268 A CN104377268 A CN 104377268A
- Authority
- CN
- China
- Prior art keywords
- crystal silicon
- layer
- silicon wafer
- electrode layer
- silicon chip
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 238000001704 evaporation Methods 0.000 claims abstract description 19
- 230000008020 evaporation Effects 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052681 coesite Inorganic materials 0.000 claims abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 4
- 229910052682 stishovite Inorganic materials 0.000 claims abstract 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract 4
- 239000000203 mixture Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 description 9
- 230000011218 segmentation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000632 Alusil Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of solar energy, in particular to a solar cell panel and a crystal silicon wafer of the solar cell panel. The solar cell panel is composed of a glass substrate, a transparent electrode layer, the crystal silicon wafer and a back electrode layer, wherein an evaporation layer is laminated on one face of the glass substrate, the transparent electrode layer is located below the evaporation layer, the crystal silicon wafer is arranged below the transparent electrode layer, and the back electrode layer is arranged below the crystal silicon wafer. A first SiO2 film layer, a second TiO2 film layer and a third SiO2 film layer are arranged on the back face of the crystal silicon wafer. By the adoption of the solar cell panel and the crystal silicon wafer of the solar cell panel, more sunlight is absorbed, compared with the prior art that the back surface of a crystal silicon wafer is only provided with a full aluminum back surface field, the transmittivity of sunlight is remarkably reduced, and therefore the photoelectric conversion efficiency of the crystal silicon wafer is greatly improved; in addition, through etching of a contact window, an aluminum film is arranged on the contact window, so that a partial aluminum back surface field is formed; compared with the full aluminum back surface field, due to the fact that the area of a high-recombination region of the aluminum back surface field is reduced, the influence of the high-recombination region on the service life of minority carriers on the back surface of crystal silicon wafer is reduced correspondingly, and therefore the photoelectric conversion efficiency of the crystal silicon wafer is further improved.
Description
Technical field
The present invention relates to technical field of solar, be specifically related to a kind of solar energy energy cell panel and crystal silicon chip thereof.
Background technology
Along with the worsening shortages of the energy, the exploitation exploitation of regenerative resource more and more receives the concern of people, and to deepening continuously of solar cell research, the emphasis of crystal silicon solar energy battery development is high efficiency and low cost.Solar energy is the inexhaustible regenerative resources of the mankind. is also clean energy resource, do not produce any environmental pollution.In the middle of effective utilization of solar energy; Large sun can solar photovoltaic utilization be research field with fastest developing speed in the last few years, most active, is one of project wherein attracted most attention.For this reason, people Study and Development solar cell.Make solar cell mainly based on semi-conducting material, its operation principle photoelectricity occurs in conversion reaction after utilizing photoelectric material to absorb luminous energy,
The crystal silicon chip of conventional solar panel adopts the full aluminium aluminum back surface field of back up, its concrete production technology is: crystal silicon chip through making herbs into wool, spread, remove PSG, silicon oxide layer containing higher phosphorous concentration, be called as phosphorosilicate glass) and after front forms antireflective coating (one deck that crystal silicon chip sensitive surface is coated with reduces the film of sunlight reflection), at its back surface, one deck aluminium lamination is set, to improve open circuit voltage and short circuit current, i.e. full aluminium back surface field.Although the structure adopting this kind of technique to arrange has many good qualities, but the alusil alloy back surface formed due to sintering has certain limitation in minimizing compound (compound: a kind of mode of the minority carrier minimizing at the crystal silicon chip back side) and back reflection effect, particularly the alusil alloy district i.e. limitation of high recombination region itself is more obvious, and aluminium back surface field is on the low side to sun light reflectance, long-wave response is poor, limits the further raising of solar cell photoelectric conversion efficiency.
Summary of the invention
For solving the problem, the invention provides a kind of solar panel and crystal silicon chip thereof.
The technical solution used in the present invention is: solar panel is integrated in form manufacture on a plate with multiple solar battery cell ground connection that is electrically connected, for this reason, be provided as the glass substrate of transparent insulating layer primarily, on the glass substrate with material evaporation transparent electrode layers such as TCO.In order to evaporation transparent electrode layer, can multiple physics, the chemical vapor deposition method such as using plasma evaporation, vacuum evaporation, sputtering (Sputtering).Afterwards, laser scribing machine is utilized to carry out composition on transparent electrode layer, be separated into the transparency electrode of multiple elongated, belt-shaped, then, with the crystal silicon chip of the material evaporation covering transparent electrode layers such as a-Si, afterwards, laser scribing machine is utilized to carry out composition and be divided into multiple crystal silicon chip, now, slot segmentation between crystal silicon chip extends along the direction identical with the separating tank between transparent electrode layer, then, the back electrode layer of crystal silicon chip is covered with metal material evaporations such as aluminium, laser scribing machine is utilized to carry out composition and be separated into multiple backplate, in the solar panel made by operation as above, overlapped stacked striped transparent electrode, crystal silicon chip and backplate become a unit, form by multiple solar cell is integrated on the whole.Because back electrode layer carries out evaporation in the mode of filling the slot segmentation between crystal silicon chip, so the transparency electrode of arbitrary solar cell is connected with the backplate of another battery adjoined with this battery.That is, the slot segmentation between crystal silicon chip also utilizes, so all solar cells on substrate are connected with electric connection mode mutually as the connection groove between battery.Outer electrode is connected at the both ends of multiple solar cells of series connection.
Beneficial effect of the present invention is: carry out passivation by the passivating structure be made up of above three-layer thin-film to the dangling bonds of crystal silicon chip back surface, improve the utilance of crystal silicon chip to sunlight, and adopt the set-up mode of trilamellar membrane, make passivating structure along close crystal silicon chip back surface to the direction away from crystal silicon chip back surface, refractive index successively from low to high, thickness successively from high to low, and then multipath reflection is formed to sunlight, farthest improve the reflectivity of crystal silicon chip back surface, enhance its absorbing again sunlight, compared with full aluminium back surface field is only set with crystal silicon chip back surface in prior art, the transmissivity of sunlight significantly reduces, substantially increase the photoelectric conversion efficiency of crystal silicon chip.In addition, by etching contact hole, contact hole arranges aluminium film and the local aluminum back surface field formed, compared with full aluminium back surface field, because the high recombination region of aluminium back surface field reduces, it, on the impact of the minority carrier lifetime of crystal silicon chip back surface also corresponding reduction, further increases the photoelectric conversion efficiency of crystal silicon chip.
Embodiment
Solar panel is integrated in form manufacture on a plate with multiple solar battery cell ground connection that is electrically connected, and for this reason, is provided as the glass substrate of transparent insulating layer primarily, on the glass substrate with material evaporation transparent electrode layers such as TCO.In order to evaporation transparent electrode layer, can multiple physics, the chemical vapor deposition method such as using plasma evaporation, vacuum evaporation, sputtering (Sputtering).Afterwards, laser scribing machine is utilized to carry out composition on transparent electrode layer, be separated into the transparency electrode of multiple elongated, belt-shaped, then, with the crystal silicon chip of the material evaporation covering transparent electrode layers such as a-Si, afterwards, laser scribing machine is utilized to carry out composition and be divided into multiple crystal silicon chip, now, slot segmentation between crystal silicon chip extends along the direction identical with the separating tank between transparent electrode layer, then, the back electrode layer of crystal silicon chip is covered with metal material evaporations such as aluminium, laser scribing machine is utilized to carry out composition and be separated into multiple backplate, in the solar panel made by operation as above, overlapped stacked striped transparent electrode, crystal silicon chip and backplate become a unit, form by multiple solar cell is integrated on the whole.Because back electrode layer carries out evaporation in the mode of filling the slot segmentation between crystal silicon chip, so the transparency electrode of arbitrary solar cell is connected with the backplate of another battery adjoined with this battery.That is, the slot segmentation between crystal silicon chip also utilizes, so all solar cells on substrate are connected with electric connection mode mutually as the connection groove between battery.Outer electrode is connected at the both ends of multiple solar cells of series connection.
Claims (2)
1. solar panel and a crystal silicon chip thereof, is characterized in that: described solar panel forms by with lower part: superimposed layer has the glass substrate of evaporation layer, there is transparent electrode layer in the lower floor of evaporation layer, there is crystal silicon chip in the lower floor of euphotic electrode layer, there is back electrode layer in the lower floor of crystal silicon chip; The back side of described crystal silicon chip is provided with ground floor SiO2 film, second layer TiO2 film, third layer SiO2 film.
2. a manufacture method for solar panel,
A, choose glass substrate as transparent insulating layer, adopt vacuum deposition method evaporation transparent electrode layer with TCO on the glass substrate;
B, first take the assigned position of substrate, obtain image data, by comparing the reference data of image data and regulation, calculate position error, according to position error, rotate substrate to predetermined angular, the glass substrate one side at transparent insulating layer being laminated with evaporation layer is loaded on brace table fixing;
C, irradiate the laser that can pass through transparent insulating layer to described substrate, utilize laser to portray machine composition on transparent electrode layer, be separated into the transparency electrode of multiple elongated, belt-shaped;
The crystal silicon chip of d, use a-Si evaporation covering transparent electrode layer, utilizes laser scribing machine carry out composition and be divided into multiple crystal silicon chip;
E, cover the back electrode layer of crystal silicon chip with aluminium-vapour deposition, utilize laser scribing machine carry out composition and be separated into multiple backplate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410308401.3A CN104377268A (en) | 2014-07-01 | 2014-07-01 | Solar cell panel and crystal silicon wafer thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410308401.3A CN104377268A (en) | 2014-07-01 | 2014-07-01 | Solar cell panel and crystal silicon wafer thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104377268A true CN104377268A (en) | 2015-02-25 |
Family
ID=52556046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410308401.3A Pending CN104377268A (en) | 2014-07-01 | 2014-07-01 | Solar cell panel and crystal silicon wafer thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104377268A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070116966A1 (en) * | 2005-11-22 | 2007-05-24 | Guardian Industries Corp. | Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| CN102292825A (en) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| WO2013134029A1 (en) * | 2012-03-06 | 2013-09-12 | Applied Materials, Inc. | Patterned aluminum back contacts for rear passivation |
| US20130255765A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Doped ai paste for local alloyed junction formation with low contact resistance |
-
2014
- 2014-07-01 CN CN201410308401.3A patent/CN104377268A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070116966A1 (en) * | 2005-11-22 | 2007-05-24 | Guardian Industries Corp. | Solar cell with antireflective coating with graded layer including mixture of titanium oxide and silicon oxide |
| CN102292825A (en) * | 2009-06-22 | 2011-12-21 | Lg电子株式会社 | Solar cell and method of manufacturing the same |
| CN102208477A (en) * | 2011-05-26 | 2011-10-05 | 南开大学 | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof |
| WO2013134029A1 (en) * | 2012-03-06 | 2013-09-12 | Applied Materials, Inc. | Patterned aluminum back contacts for rear passivation |
| US20130255765A1 (en) * | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Doped ai paste for local alloyed junction formation with low contact resistance |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150225 |