CN102097509A - Design of five-layered structure of tandem thin-film amorphous silicon solar cell - Google Patents
Design of five-layered structure of tandem thin-film amorphous silicon solar cell Download PDFInfo
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- CN102097509A CN102097509A CN2010105648385A CN201010564838A CN102097509A CN 102097509 A CN102097509 A CN 102097509A CN 2010105648385 A CN2010105648385 A CN 2010105648385A CN 201010564838 A CN201010564838 A CN 201010564838A CN 102097509 A CN102097509 A CN 102097509A
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Abstract
The invention relates to the field of solar photovoltaic power generation, and in particular discloses a design of a five-layered structure of a tandem thin-film amorphous silicon solar cell. The structure comprises a sublayer A transparent substrate, a sublayer B pre-TCO (Transparent Conducting Oxide) (transparent conductive layer), a sublayer C absorption layer (active layer) 1, a sublayer D intermediate layer 1, a sublayer E absorption layer 2, a sublayer F intermediate layer 2, a sublayer G absorption layer 3, a sublayer H post-TCO and a sublayer I reflective layer. The five-layered tandem solar cell is formed by superposing the sublayers A to H from bottom to top in turn. The five-layered structure overcomes the defect of insufficient utilization rate of solar spectrum in the traditional three-layered amorphous silicon tandem solar cell, effectively raises the absorption rate of short-wavelength light through the newly added absorption layers and intermediate layers, enables the cell to maintain higher stability integrally, and achieves the photoelectric conversion efficiency which is greatly improved compared with the traditional three-layered structure.
Description
Technical field
The present invention relates to the solar energy power generating field, be specifically related to a kind of design of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure.
Background technology
Stacked solar cell, cascade solar cell is meant in order to widen the response of solar spectrum, the active layer of traditional unijunction solar cell is superimposed, thereby improves a kind of novel solar cell of energy conversion efficiency.Silicon-based thin film solar cell still has a wide range of applications at present, and the design just is being based on this material structure.When only doing active layer with amorphous silicon material, its spectral absorption is limit near 700nm.If adopt amorphous silicon, crystallite SiGe binode laminated construction, and even after the amorphous silicon, amorphous silicon, microcrystal silicon three knot laminations, its spectral response can be widened 1000nm so that to 1100nm from 700nm.Battery efficiency is then by 9% to 11.7%, until 15.1%.
In existing amorphous, crystalline/micro-crystalline silicon laminated solar battery, the amorphous silicon top layer of three-decker, ZnO intermediate layer, microcrystal silicon bottom stacked solar cell, cascade solar cell become the focus of current scientific research with its higher energy conversion efficiency and stability.Top cell (top cell) adopts hydrogenation non crystal silicon film, and its band gap width comes the short sunlight of absorbing wavelength about 1.75ev.In the laminated cell of this three-decker, the thickness of top layer a-Si:H is approximately about 0.18 μ m, is no more than 0.2 μ m.This is owing to there is the cause of ZnO intermediate layer (interlayer) between amorphous silicon and microcrystal silicon layer.The intermediate layer does not produce electronics as active layer, the hole is right, thereby the effect in intermediate layer is to utilize refringence reflecting part sunlight to get back to the light absorption that top layer improves top layer, reduces the thickness of top layer.The thickness of lower top layer can increase the resistance to overturning of battery.And the existence in intermediate layer is mated top layer and the sub-battery current of bottom more, has reduced unnecessary energy loss.In this laminated construction, bottom cell adopts p-i-n type microcrystalline hydrogenated silicon μ c-si:H more, and its thickness is about 4.4 μ m, and band gap width is about 0.7ev.Its role is to further to absorb the unabsorbed long wavelength's incident light that leaks down from top layer and intermediate layer.The energy conversion efficiency of this laminated cell can reach about 15%.
But, in this three knot laminated construction, because the band gap width of top layer amorphous silicon material is 1.75ev, and the band gap width of bottom microcrystal silicon material is about 0.7ev, because two active layer band gap widths are bigger at interval, energy is lower than 1.75ev and the photon that is higher than 0.7ev can not be absorbed fully, and, the photon that energy is higher than the material band gap width produces a pair of electron-hole pair because only exciting, for the photon of those energy, bigger energy loss is arranged far above the material band gap width.
In this case, obviously just can't reach the effect that makes full use of solar spectrum.
Therefore, in the stacked solar cell, cascade solar cell structure, how to add one and have the sub-battery layers of appropriate bandgap width and make it and other sub-battery layers is complementary and just becomes a problem demanding prompt solution.
Summary of the invention
The objective of the invention is to propose a kind of design of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure, this structure overcomes the existing not high shortcoming of three layer laminate battery spectrum utilances, and can reach than higher photostability.
Technical scheme of the present invention is as follows: a kind of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure, this structure comprises sublayer A transparent substrates, the preceding TCO (transparency conducting layer) of sublayer B, sublayer C absorbed layer (active layer) 1, D intermediate layer, sublayer 1, sublayer E absorbed layer 2, F intermediate layer, sublayer 2, sublayer G absorbed layer 3, TCO behind the H of sublayer, I reflector, sublayer.Each sublayer A-H is the five layer laminate solar cells of stack formation successively from the bottom up.
A transparent substrates its material in sublayer adopts the higher glass of light transmittance, in order to increase the sunlight impingement rate, usually designs one deck antireflective coating on its surface.Its material of TCO is ZnO (zinc oxide) in the laboratory behind preceding TCO of sublayer B and the sublayer H, adopts LP-CVD (low pressure chemical vapor phase deposition) method to make more, should have the high grade of transparency, high conductivity, high scattered power.Sublayer B and sublayer H play the effect of the light absorption of strengthening sublayer C amorphous silicon battery layer and sublayer G microcrystal silicon battery layers.
Sublayer C amorphous silicon battery layer adopts hydrogenation non crystal silicon film, and its band gap width come the short sunlight of absorbing wavelength, and its thickness can be controlled at about 0.1 μ m owing to the existence in two intermediate layers (D, F) about 1.75ev.ZnO is adopted in D intermediate layer, sublayer 1, and its thickness is no more than 0.1 μ m.
Sublayer E absorbed layer 2 is for newly adding active layer, and its band gap width is arranged on about 1.2ev, and its material can adopt monocrystalline silicon Si (1.12ev), its role is to further absorb the short wavelength range sunlight, reduces the loss of spectral energy.For this reason, its thickness should be controlled at about 0.2 μ m.
F intermediate layer, the sublayer 2 same ZnO materials that adopt, its thickness should be no more than 0.1 μ m.
Sublayer G absorbed layer 3 adopts p-i-n type microcrystalline hydrogenated silicon μ c-s:H, band gap width is about 0.7ev, its THICKNESS CONTROL its role is to further to absorb the unabsorbed long wavelength's incident light and the part short wavelength sunlight that leak down from sublayer C and sublayer E about 0.4 μ m.
I reflector, sublayer is adopted the double-deck material of thin ZnO/Ag to be used for complete reflected sunlight and is got back to the silicon absorbed layer, thereby improves the efficiency of light energy utilization.
Remarkable result of the present invention is: a kind of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure of the present invention has overcome the shortcoming of existing three layers of non-crystalline/micro-crystalline silicon laminated solar battery solar spectrum utilance deficiency, utilize the absorbed layer and the intermediate layer that newly add, improved the absorptivity of short-wavelength light effectively, and make cell integrated maintenance advantages of higher stability, the existing three-decker of its photoelectric conversion efficiency has bigger improvement.
Description of drawings
Fig. 1 is a laminate film non-crystalline/micro-crystalline silicon solar cell three-decker schematic diagram;
Fig. 2 is a laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure schematic diagram;
Among the figure: 1, transparent substrates; 2, preceding TCO; 3, amorphous silicon top layer; 4, ZnO intermediate layer; 5, microcrystal silicon bottom; 6, back TCO; 7, reflector.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
As shown in Figure 2, this structure comprises sublayer A transparent substrates, the preceding TCO (transparency conducting layer) of sublayer B, sublayer C absorbed layer (active layer) 1, D intermediate layer, sublayer 1, sublayer E absorbed layer 2, F intermediate layer, sublayer 2, sublayer G absorbed layer 3, TCO behind the H of sublayer, I reflector, sublayer.Each sublayer A-H is the five layer laminate solar cells of stack formation successively from the bottom up.
A transparent substrates its material in sublayer adopts the higher glass of light transmittance, in order to increase the sunlight impingement rate, usually designs one deck antireflective coating on its surface.Its material of TCO is ZnO (zinc oxide) in the laboratory behind preceding TCO of sublayer B and the sublayer H, adopts LP-CVD (low pressure chemical vapor phase deposition) method to make more, should have the high grade of transparency, high conductivity, high scattered power.Sublayer B and sublayer H play the effect of the light absorption of strengthening sublayer C amorphous silicon battery layer and sublayer G microcrystal silicon battery layers.
Sublayer C amorphous silicon battery layer adopts hydrogenation non crystal silicon film, and its band gap width come the short sunlight of absorbing wavelength, and its thickness can be controlled at about 0.1 μ m owing to the existence in two intermediate layers (D, F) about 1.75ev.ZnO is adopted in D intermediate layer, sublayer 1, and its thickness is no more than 0.1 μ m.
Sublayer E absorbed layer 2 is for newly adding active layer, and its band gap width is arranged on about 1.2ev, and its material can adopt monocrystalline silicon Si (1.12ev), its role is to further absorb the short wavelength range sunlight, reduces the loss of spectral energy.For this reason, its thickness should be controlled at about 0.2 μ m.
F intermediate layer, the sublayer 2 same ZnO materials that adopt, its thickness should be no more than 0.1 μ m.
Sublayer G absorbed layer 3 adopts p-i-n type microcrystalline hydrogenated silicon μ c-s:H, band gap width is about 0.7ev, its THICKNESS CONTROL its role is to further to absorb the unabsorbed long wavelength's incident light and the part short wavelength sunlight that leak down from sublayer C and sublayer E about 0.4 μ m.
I reflector, sublayer is adopted the double-deck material of thin ZnO/Ag to be used for complete reflected sunlight and is got back to the silicon absorbed layer, thereby improves the efficiency of light energy utilization.
Claims (4)
1. laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure, this structure comprises sublayer A transparent substrates, the preceding TCO (transparency conducting layer) of sublayer B, sublayer C absorbed layer (active layer) 1, D intermediate layer, sublayer 1, sublayer E absorbed layer 2, F intermediate layer, sublayer 2, sublayer G absorbed layer 3, TCO behind the H of sublayer, I reflector, sublayer.Each sublayer A-H is the five layer laminate solar cells of stack formation successively from the bottom up.
2. a kind of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure according to claim 1 is characterized in that: described sublayer C amorphous silicon top layer adopts hydrogenation non crystal silicon film, and its THICKNESS CONTROL is at 0.1 μ m.ZnO film is adopted in D intermediate layer, sublayer 1, and its THICKNESS CONTROL is in 0.1 μ m.
3. a kind of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure according to claim 1 is characterized in that: E absorbed layer 2 its materials in described sublayer adopt monocrystalline silicon, and band gap width is about 1.2ev.THICKNESS CONTROL is in 0.2 μ m.
4. a kind of laminate film non-crystalline/micro-crystalline silicon solar cell five-layer structure according to claim 1 is characterized in that: F intermediate layer, described sublayer 2 its materials adopt ZnO film, and its THICKNESS CONTROL is in 0.1 μ m.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938430A (en) * | 2012-12-07 | 2013-02-20 | 上海空间电源研究所 | Silicon-based multi-junction tandem solar cell with flexible substrate and interlayer |
| WO2024050927A1 (en) * | 2022-09-07 | 2024-03-14 | 德州学院 | Quantum dot laminated solar cell and manufacturing method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246928A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Back contact layer of thin film silicon solar cell |
| WO2010038406A1 (en) * | 2008-09-30 | 2010-04-08 | 新日本石油株式会社 | Tandem solar cell |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246928A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Back contact layer of thin film silicon solar cell |
| WO2010038406A1 (en) * | 2008-09-30 | 2010-04-08 | 新日本石油株式会社 | Tandem solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102938430A (en) * | 2012-12-07 | 2013-02-20 | 上海空间电源研究所 | Silicon-based multi-junction tandem solar cell with flexible substrate and interlayer |
| CN102938430B (en) * | 2012-12-07 | 2016-12-21 | 上海空间电源研究所 | Comprise the silica-based many knot stacked solar cell, cascade solar cells of flexible substrate and the manufacture method thereof in intermediate layer |
| WO2024050927A1 (en) * | 2022-09-07 | 2024-03-14 | 德州学院 | Quantum dot laminated solar cell and manufacturing method therefor |
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Application publication date: 20110615 |