CN104377155B - Electrostatic chuck and plasma processing device - Google Patents
Electrostatic chuck and plasma processing device Download PDFInfo
- Publication number
- CN104377155B CN104377155B CN201310354114.1A CN201310354114A CN104377155B CN 104377155 B CN104377155 B CN 104377155B CN 201310354114 A CN201310354114 A CN 201310354114A CN 104377155 B CN104377155 B CN 104377155B
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- chuck
- cooling
- chuck body
- electrostatic
- heat insulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
Electrostatic chuck and plasma processing device that the present invention is provided, including chuck and pedestal for carrying workpiece to be machined, chuck includes chuck body, the electrostatic attraction electrode and heating unit being arranged in chuck body, electrostatic attraction electrode is connected with dc source, is used to workpiece to be machined is fixed on chuck by the way of electrostatic attraction；Heating unit is used to heat workpiece to be machined；Pedestal is arranged on the lower section of chuck body, is used to support and fix chuck body；Insulating assembly is provided between chuck body and pedestal, insulating assembly includes expansion heat insulation loop and cooling unit, wherein, expansion heat insulation loop is the thin-walled workpiece of closure, and its upper/lower terminal is in sealing contact with chuck body and pedestal respectively；Cooling unit is used to cool down expansion heat insulation loop.The present invention provides a kind of electrostatic chuck, its heat-insulating problem that can thoroughly solve chuck, such that it is able to improve the efficiency of heating surface and heating uniformity of electrostatic chuck.
Description
Technical field
The present invention relates to semiconductor equipment manufacture field, in particular it relates to a kind of electrostatic chuck and plasma process
Equipment.
Background technology
In manufacture integrated circuit（IC）And MEMS（MEMS）Technical process in, particularly implement plasma carve
Erosion（ETCH）, physical vapour deposition (PVD)（PVD）, chemical vapor deposition（CVD）Deng technical process in, often consolidated using electrostatic chuck
The workpiece to be machined such as fixed, support and heating chip, for chip provides Dc bias and controls the temperature of wafer surface.
Fig. 1 is the structural representation of typical electrostatic chuck.As shown in figure 1, electrostatic chuck includes from top to bottom folding successively
Insulating barrier 1, heater 2 and the aluminium base 3 put.Wherein, insulating barrier 1 uses AL2O3Or the ceramic material such as ALN is made, and exhausted
DC electrode layer is provided with edge layer 1（Not shown in figure）, DC electrode layer electrically connected with dc source after in DC electrode layer
Electrostatic attraction is produced between chip, so as to the workpieces to be machined such as chip to be fixed on the top of insulating barrier 1；Heater 2 is used for
The workpieces to be machined such as chip are heated；Aluminium base 3 is connected with radio-frequency power supply, to be generated on the workpieces to be machined such as chip
Rf bias.Additionally, being additionally provided with thermal insulation layer 4 between heater 2 and aluminium base 3, thermal insulation layer 4 is had good using silicon rubber etc.
The material of good heat-proof quality is made, to stop that the heat produced from heater 2 conducts to aluminium base 3, such that it is able to reduce heating
The thermal loss of device 2, and then improve the efficiency of heating surface of electrostatic chuck.And, it is between thermal insulation layer 4 and heater 2 and heat-insulated
Be respectively arranged with sealant between layer 4 and aluminium base 3, using sealant respectively to the gap between thermal insulation layer 4 and heater 2 and
Gap between thermal insulation layer 4 and aluminium base 3 is sealed, so as to the vacuum ring where preventing air from entering chip from the gap
Border.
Above-mentioned electrostatic chuck be realized by thermal insulation layer 4 it is heat-insulated between heater 2 and aluminium base 3, this actually should
Problems with is inevitably present in：
First, because heater 2, thermal insulation layer 4 and aluminium base 3 closely stack together, thermal insulation layer 4 is difficult to intercept completely
The heat that heater 2 is produced conducts to aluminium base 3, and the heating-up temperature of heater 2 is higher, and the effect of heat insulation of thermal insulation layer 4 is got over
Difference, so as to reduce the efficiency of heating surface of electrostatic chuck.
Second, due to electrostatic chuck using sealant come respectively to the gap between thermal insulation layer 4 and heater 2 and thermal insulation layer
Gap between 4 and aluminium base 3 is sealed, and the sealing function of sealant will fail in high temperature environments, causes air
Vacuum environment where entering chip from the gap, so as to influence being normally carried out for technique.
Third, because heater 2, thermal insulation layer 4 are different with the thermal coefficient of expansion of aluminium base 3, three produces in heating process
The difference of raw thermal expansion will destroy the sealing effectiveness of sealant, the vacuum ring where causing air to enter chip from the gap
Border, so as to influence being normally carried out for technique.
Therefore, the Chinese patent application of Publication No. CN102105253A discloses a kind of high temperature electrostatic chuck, such as Fig. 2 institutes
Show, electrostatic chuck includes chuck main body 110 and platform assembly 130.Wherein, chuck main body 110 is arranged at the upper of platform assembly 130
Side, it includes the DC electrode 118 being provided at its inner portion and heating element heater 116, and DC electrode 118 is used for the side of electrostatic attraction
Formula secures the wafer in the top of chuck main body 110；Heating element heater 116 is used to heat chip.And, chuck main body 110 with
Expansion pipe 140, ring-type dead ring 154 and mounting flange 148 are provided between platform assembly 130.Wherein, ring-type dead ring
154 are fixedly connected by mounting flange 148 with platform assembly 130, to support chuck main body 110；Expansion pipe 140 is thin-walled
Cyclic structure, and expansion pipe 140 outer rim side wall against ring-type dead ring 154 interior ring-side wall set.And, expansion connects
First 140 upper end 144 welds together by brazed joint 142 with chuck main body 110, the lower end 146 of expansion pipe 140 by
Brazed joint 143 welds together with mounting flange 148, with to the gap between ring-type dead ring 154 and chuck main body 110 and
Gap between ring-type dead ring 154 and mounting flange 148 is sealed.Additionally, expansion pipe 140 using the coefficient of expansion between
The material of the median of the coefficient of expansion of chuck main body 110 and platform assembly 130 makes, to adapt to chuck main body 110 and platform
The difference of the thermal expansion of component 130.
Although above-mentioned electrostatic chuck is adapted between chuck main body 110 and platform assembly 130 using expansion pipe 140
The difference of thermal expansion, but, there is problems with above-mentioned electrostatic chuck, i.e., in actual applications：
Due to expansion pipe 140 cannot independent support chuck main body 110, thus must be by the support chuck of dead ring 154
Main body 110, however, because a part of heat that heating element heater 116 is produced can conduct to dead ring 154, causing heating element heater 16
Thermal losses increase, so as to reduce the efficiency of heating surface of electrostatic chuck.Be additionally, since dead ring 154 only with chuck main body 110
The fringe region contact of bottom, causes the thermal losses speed of the fringe region of chuck main body 110 more than the heat of central area
Loss speed, this causes the non-uniform temperature of chuck main body 110, so that the non-uniform temperature of chip, and then reduce processing
Quality.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that a kind of electrostatic chuck and
Plasma processing device, its heat-insulating problem that can thoroughly solve chuck, such that it is able to improve the efficiency of heating surface of electrostatic chuck
And heating uniformity.
A kind of electrostatic chuck is provided to realize the purpose of the present invention, including for carrying the chuck and base of workpiece to be machined
Seat, the chuck includes chuck body, the electrostatic attraction electrode and heating unit being arranged in the chuck body, the electrostatic attraction electrode
It is connected with dc source, is used to be fixed on workpiece to be machined on the chuck by the way of electrostatic attraction；The heating is single
Unit is for heating the workpiece to be machined；The pedestal is arranged on the lower section of the chuck body, is used to support and fix described
Chuck body；Be provided with insulating assembly between the chuck body and pedestal, the insulating assembly include expansion heat insulation loop and
Cooling unit, wherein it is described expansion heat insulation loop be closure thin-walled workpiece, its upper/lower terminal respectively with the chuck body and
Pedestal is in sealing contact；The cooling unit is used to cool down the expansion heat insulation loop.
Wherein, be formed with annular boss in the upper end of the expansion heat insulation loop, and on described annular boss it is upper
First seal is provided between the lower surface of surface and the chuck body, is used to seal gap therebetween.
Wherein, lower annular boss is formed with the lower end of the expansion heat insulation loop, and under the lower annular boss
Second seal is provided between the upper surface of surface and the pedestal, is used to seal gap therebetween；Or
The lower end of the expansion heat insulation loop is sealed with the upper surface of the pedestal by the way of welding.
Wherein, the cooling unit includes cooling media source and cooling ring, wherein the cooling ring is located at the chuck sheet
Between body and pedestal, and the inner or outer side setting of the expansion heat insulation loop is looped around, and is provided with the cooling ring
The cooling duct of annular；The cooling media source is used for being passed through cooling media in the cooling duct.
Wherein, the cooling media includes cooling liquid or cooling gas.
Wherein, coldplate is provided between the pedestal and the chuck body, is used to intercept by the chuck body
The heat of generation is towards the base radiation；And the expansion heat insulation loop is located between the chuck body and coldplate, and
Its upper/lower terminal is in sealing contact with the chuck body and coldplate respectively, and the expansion heat insulation loop, the chuck body
A closing space is formed and the coldplate between.
Wherein, the lower surface of the cooling ring is stacked on the upper surface of the coldplate, and in the cooling ring
The entrance and exit connected with the cooling duct is formed with lower surface；First passage is respectively arranged with the coldplate
And second channel, the upper end of the first passage and second channel is located at the upper surface of the coldplate, and respectively with it is described enter
Mouth and outlet are connected；The lower end of the first passage and second channel be located at the coldplate lower surface, and with the cooling
Media supply is connected；And the 3rd seal is provided between the lower surface of the cooling ring and the upper surface of the coldplate,
It is used to seal the junction that the first passage and second channel are connected with the entrance and exit respectively.
Wherein, support ring is provided between the chuck body and coldplate, is used to support the chuck body；And
And, the support ring is nested with the heat-insulated central spacer of expansion to be set, and the external diameter of the support ring is heat-insulated less than the expansion
The internal diameter of ring.
Wherein, the quantity of the support ring is one or more, and the internal diameter of multiple support rings is different, and is spaced embedding
Set is set.
Wherein, the quantity of the support ring is one, and the sealing space is divided into corresponds respectively to the chuck
The central area of body lower surface and the first subspace of fringe region and the second subspace.
Wherein, on the upper surface of the coldplate, and it is located in first subspace and the second subspace sets respectively
The first venthole and the second venthole through the cooling plate thickness are equipped with, heat-conducting gas is by first venthole and the
Two ventholes are respectively enterd in first subspace and the second subspace；Also, it is respectively arranged with the chuck body
Center passage of heat and edge passage of heat, wherein, the lower end of the center passage of heat connects with first subspace, institute
State the central area connection of chuck body upper surface described in the upper end of center passage of heat；The lower end of the edge passage of heat with
The second subspace connection, the upper end of the edge passage of heat connects with the fringe region of the chuck body upper surface.
Wherein, the support ring is made using stainless steel or Ni-Co-Fe alloys.
Wherein, the expansion heat insulation loop is made using stainless steel or Ni-Co-Fe alloys.
Used as another technical scheme, the present invention also provides a kind of plasma processing device, and it includes reaction chamber,
Electrostatic chuck is provided with the reaction chamber, is used to fix workpiece to be machined by the way of electrostatic attraction, the electrostatic card
Disk employs the above-mentioned electrostatic chuck of present invention offer.
The invention has the advantages that：
The electrostatic chuck that the present invention is provided, it is provided with insulating assembly between chuck and pedestal, and the insulating assembly includes
Expansion heat insulation loop and cooling unit.Due to the thin-walled workpiece that expansion heat insulation loop is closure, its heat that can intercept chuck generation
Measure and transmitted to pedestal, such that it is able to reduce the loss of the heat of chuck, this can not only improve the efficiency of heating surface of electrostatic chuck, and
And the heating uniformity of electrostatic chuck can be improved.Further, since the expansion heat insulation loop of annular thin wall structure is easy to when being heated
Deformation, it can be moved with the thermal walking of chuck and pedestal, and this may insure the sealing property of insulating assembly, such that it is able to
Electrostatic chuck is set to keep sealing.
Additionally, by cooling unit cooling expansion heat insulation loop, the heat that can further intercept chuck generation is passed to pedestal
Pass, such that it is able to thoroughly solve the heat-insulating problem of chuck, and then the efficiency of heating surface and heating uniformity of electrostatic chuck can be improved.
Used as another technical scheme of the invention, the present invention also provides a kind of plasma processing device, and it passes through to adopt
The above-mentioned electrostatic chuck provided with the present invention, can improve the efficiency of heating surface and heating uniformity of plasma processing device.
Brief description of the drawings
Fig. 1 is the structural representation of typical electrostatic chuck；
Fig. 2 is the structural representation of existing high temperature electrostatic chuck；
Fig. 3 A are the sectional view of electrostatic chuck provided in an embodiment of the present invention；
Fig. 3 B are the partial enlarged drawing of electrostatic chuck in Fig. 3 A；And
Fig. 3 C are the top view of chuck in Fig. 3 A.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, come below in conjunction with the accompanying drawings to the present invention
The electrostatic chuck and plasma processing device of offer are described in detail.
Fig. 3 A are the sectional view of electrostatic chuck provided in an embodiment of the present invention.Fig. 3 B are that the part of electrostatic chuck in Fig. 3 A is put
Big figure.Also referring to Fig. 3 A and Fig. 3 B, electrostatic chuck includes chuck, the pedestal 5, coldplate for carrying workpiece to be machined 13
7 and insulating assembly 8.Wherein, chuck includes chuck body 14, the electrostatic attraction electrode 11 and heating unit being arranged in chuck body 14
12.Electrostatic attraction electrode 11 and dc source（Not shown in figure）Connection, dc source provides energy to electrostatic attraction electrode 11, with using quiet
Workpiece to be machined 13 is fixed on the mode of Electro Sorb the upper surface of chuck body 14, and in actual applications, chuck body 14 is adopted
Manufactured with ceramic material, such as aluminium nitride.And, the material of electrostatic attraction electrode 11 can select Mo or W, and heating unit 12 can select Mo
Material.Heating unit 12 is used to heat workpiece to be machined 13；Pedestal 5 is arranged on the lower section of chuck body 14, is used to support and consolidates
The fixed chuck body 14.Coldplate 7 is arranged between pedestal 5 and chuck body 14, is used to intercept what is produced by chuck body 14
Heat is radiated towards pedestal 5.
Insulating assembly 8 is arranged between chuck body 14 and coldplate 7, and it includes expanding heat insulation loop 29 and cooling unit.
Wherein, expansion heat insulation loop 29 is made using stainless steel or Ni-Co-Fe alloys, and is the thin-walled workpiece of closure, and expand every
The upper/lower terminal of hot ring 29 is in sealing contact with chuck body 14 and coldplate 7 respectively, expansion heat insulation loop 29, the and of chuck body 14
A closing space is formed between coldplate 7.
In the present embodiment, annular boss 28 is formed with the upper end of expansion heat insulation loop 29, also, in upper annular boss
First seal 15 is provided between 28 upper surface and the lower surface of chuck body 14, is used to carry out gap therebetween
Sealing.Preferably, first seal 15 can use CF form of flanges, c-type or U-shaped isostructural metal o-ring, to prevent
During technique is carried out, the seal failure because the temperature of chuck body 14 is too high of first seal 15.Additionally, upper convex annular
Platform 28 passes through vacuum screw with chuck body 14（Not shown in figure）Be fixedly connected, will expansion heat insulation loop 29 be fixed on chuck and
Between coldplate 7.
In the present embodiment, upper annular boss 28 and expansion being shaped as inverted " L " on its cross section of heat insulation loop 29
Shape, as shown in Figure 3 B, but the invention is not limited in this, in actual applications, upper annular boss 28 with expansion heat insulation loop 29
Shape on its cross section can also be the other arbitrary shapes such as "T"-shaped, and, upper annular boss 28 is in the horizontal direction
Length can freely set as the case may be, as long as it can stably place first seal 15, and have enough areas
Realize passing through vacuum screw with chuck body 14（Not shown in figure）It is fixedly connected.
In the present embodiment, the lower end of expansion heat insulation loop 29 is carried out close with the upper surface of coldplate 7 by the way of welding
Envelope.Certainly, in actual applications, it is also possible to form lower annular boss in the lower end of expansion heat insulation loop 29, the lower annular boss
26S Proteasome Structure and Function is similar with the 26S Proteasome Structure and Function of above-mentioned upper annular boss 28, and the lower surface in lower annular boss and cooling
Second seal is provided between the upper surface of plate 7, is used to seal gap therebetween.In actual applications, if
The upper/lower terminal in expansion heat insulation loop 29 sets annular boss 28 and lower annular boss respectively, then cause expansion heat insulation loop 29
Can be detachably mounted together with chuck body 14 and coldplate 7 respectively, consequently facilitating the installation to expanding heat insulation loop 29
And replacing, and, when the damage of heat insulation loop 29 is expanded, insulating assembly 8 only need to be changed, and whole electrostatic chuck need not be changed, from
And the use cost of plasma processing device can be reduced.
Because expansion heat insulation loop 29 is the thin-walled workpiece of closure, its heat that can intercept chuck generation is passed to pedestal 5
Pass, such that it is able to reduce the loss of the heat of chuck, this can not only improve the efficiency of heating surface of electrostatic chuck, and can improve
The heating uniformity of electrostatic chuck.Further, since the expansion heat insulation loop 29 of annular thin wall structure is easily deformable when being heated, its energy
Enough to be moved with the thermal walking of chuck and pedestal 5, this may insure the sealing property of insulating assembly, such that it is able to make electrostatic card
Disk keeps sealing.
Cooling unit is used to cool down expansion heat insulation loop 29, and it includes cooling media source（Not shown in figure）With cooling ring 16.
Wherein, cooling ring 16 is located between chuck body 14 and coldplate 7, and is looped around the inner side setting of expansion heat insulation loop 29, and
The cooling duct 30 of annular is provided with cooling ring 16；Cooling media source is used for being passed through cooling media in cooling duct 30,
Cooling media can be the cooling liquid of cooling water, coolant etc., or be cooling gas.
And, the lower surface of cooling ring 16 is stacked on the upper surface of coldplate 7, and on the lower surface of cooling ring 7
It is formed with the entrance and exit connected with cooling duct 30；Also, it is respectively arranged with first passage 19 and second in coldplate 7
The upper end of passage 24, first passage 19 and second channel 24 be located at coldplate 7 upper surface, and respectively with entrance and exit connect
Connect；The lower end of first passage 19 and second channel 24 is located at the lower surface of coldplate 7, and is connected with cooling media source, in cooling
During the cooling expansion heat insulation loop 29 of ring 16, cooling media is provided by cooling media source logical into cooling via first passage 19 and entrance
Road 30, and after the whole process for flowing through cooling duct 30, discharged from outlet and second channel 24.Additionally, under cooling ring 16
The 3rd seal 31 is provided between the upper surface of surface and coldplate 7, is used to distinguish first passage 19 and second channel 24
The junction being connected with entrance and exit is sealed, so as to seal cooling duct 30.
By cooling unit cooling expansion heat insulation loop 29, the heat that can further intercept chuck generation is transmitted to pedestal 5,
Such that it is able to thoroughly solve the heat-insulating problem of chuck, and then the efficiency of heating surface and heating uniformity of electrostatic chuck can be improved.
In the present embodiment, a support ring 27 is provided between chuck body 14 and coldplate 7, to support chuck
Body 14；Also, support ring 27 is spaced nested setting with expansion heat insulation loop 29, and the external diameter of support ring 27 is less than expansion heat insulation loop
29 internal diameter, i.e. support ring 27 is located at the inner side of expansion heat insulation loop 29.And, support ring 27 will be by expansion heat insulation loop 29, chuck
The sealing space that body 14 and coldplate 7 are formed is divided into the central area and edge for corresponding respectively to the lower surface of chuck body 14
First subspace 33 and the second subspace 32 in region.
On the upper surface of coldplate 7, and it is located at respectively in the first subspace 33 and the second subspace 32 and is provided through
First venthole 22 and the second venthole 23 of the thickness of coldplate 7, and, it is respectively arranged with center heat conduction in chuck body 14
Passage and edge passage of heat, wherein, the lower end of center passage of heat connects with the first subspace 33, center passage of heat it is upper
The central area connection of the end upper surface of chuck body 14；The lower end of edge passage of heat is connected with the second subspace 32, and edge is led
The upper end of the passage of heat connects with the fringe region of the upper surface of chuck body 14.When electrostatic chuck heats workpiece to be machined, heat conduction
Gas is respectively enterd in the first subspace 33 and the second subspace 32 by the first venthole 22 and the second venthole 23, and the
Heat-conducting gas in one subspace 33 flows into the central area of the upper surface of chuck body 14 and is processed via center passage of heat
In gap between the central area of the lower surface of workpiece 13；Heat-conducting gas in second subspace 32 is via edge passage of heat stream
In entering the gap between the fringe region of the upper surface of chuck body 14 and the fringe region of the lower surface of workpiece to be machined 13.It is so-called to lead
Hot gas refers to the gas for transmitting heat to workpiece to be machined 13, and it can be helium or argon gas.
By by support ring 27 and center passage of heat and edge passage of heat, can separately control in card
In gap between the upper surface of disk body 14 and the lower surface of workpiece to be machined 13, corresponding to workpiece to be machined 13 central area and
The air pressure of fringe region, is finely adjusted such that it is able to central area individually to workpiece to be machined 13 or the temperature of fringe region,
And then the flexibility of the temperature control of electrostatic chuck can be improved.
The concrete structure to center passage of heat and edge passage of heat is described in detail separately below.Specifically, scheme
3C is the top view of chuck in Fig. 3 A.Fig. 3 C are referred to, in the present embodiment, center passage of heat includes corresponding to chuck body
The center annular passage 35 of the central area of 14 upper surfaces, center annular passage 35 includes two coaxially and is spaced nested setting
Closed annular passage, and the upper end edge chuck body 14 of center annular passage 35 the upper table for axially extending to chuck body 14
Face.The first air admission hole 26 is provided with center annular passage 35, is used to make center annular passage 35 connect with the first subspace 33
It is logical.Furthermore it is preferred that the connection multiple radial passages 351 of the two are provided between two closed annular passages, it is multiple radially logical
Road 351 is provided at circumferentially spaced along center annular passage 35, and its upper end edge chuck body 14 axially extends to chuck body
14 upper surface.By radial passage 351, heat-conducting gas can be made more uniformly to lead to the upper surface of chuck body 14 and be added
Between the lower surface of work workpiece 13, so as to more uniformly transfer heat to workpiece to be machined 13.
Structure with center passage of heat is similar, and edge passage of heat includes the side corresponding to the upper surface of chuck body 14
The edge circular passage 34 in edge region, edge circular passage 34 includes that two coaxial and the nested closed annular for setting in interval leads to
Road, and the upper end edge chuck body 14 of edge circular passage 34 the upper surface for axially extending to chuck body 14.At edge
The second air admission hole 25 is provided with circular passage 34, is used to make edge ring shape passage 34 be connected with the second subspace 32.Additionally, excellent
It is selected between two closed annular passages and is provided with the connection multiple radial passages 341 of the two, multiple radial passages 341 is along edge
Circular passage 34 is provided at circumferentially spaced, and its upper end edge chuck body 14 the upper surface that axially extends to chuck body 14.
By radial passage 341, heat-conducting gas can be made more uniformly to lead to upper surface and the workpiece to be machined 13 of chuck body 14
Between lower surface, so as to more uniformly transfer heat to workpiece to be machined 13.
In actual applications, center passage of heat or edge passage of heat can also include a closed annular passage, or
The nested closed annular passage for setting in coaxial and interval that person is more than three, the quantity of circular passage can as the case may be certainly
By setting.
In the present embodiment, insulating element 6 is also provided between coldplate 7 and pedestal 5, is used to make coldplate 7
It is electrically insulated with pedestal 5.Also, seal 17 is provided between two superposed surfaces of insulating element 6 and coldplate 7,
It is used to seal the gap between insulating element 6 and coldplate 7；And, it is superposed in insulating element 6 and pedestal 5
Seal 18 is provided between two surfaces, is used to seal the gap between insulating element 6 and pedestal 5.Additionally, cold
But heat insulation path 21 is additionally provided with plate 7, is used to reduce the own vol of coldplate 7, with further trap heat towards the spoke of pedestal 5
Penetrate.In the present embodiment, heat insulation path 21 can be the nested annular heat passage for setting in multiple coaxial and interval.Preferably,
Spacing between two neighboring annular heat passage is equal, tends to uniform with the thermal losses for ensureing chuck regional.
In the present embodiment, as shown in Figure 3A, one is also provided with coldplate 7 through the logical of its axial width
Hole 20, the wire for electrically connecting dc source and electrostatic attraction electrode 11 is electrically connected through the through hole 20 with dc source.
It should be noted that in the present embodiment, the inner side that cooling ring 16 is looped around expansion heat insulation loop 29 is set, but this
Invention is not limited thereto, and in actual applications, the outside that cooling ring can also be looped around expansion heat insulation loop is set, and this equally may be used
To cool down expansion heat insulation loop 29.
Also, it should be noted that although the quantity of support ring 27 is one in the present embodiment, the present invention not office
It is limited to this, in actual applications, the quantity of support ring 27 can be two or more, and the internal diameter of multiple support rings 27 is different, and
Interval is nested to be set.The quantity of support ring 27 can freely set as the case may be, as long as guarantee can be fixedly supported card
Disk body 14.
Need further exist for explanation, in the present embodiment, expand heat insulation loop 29 upper end by upper annular boss 28 with
Chuck body 14 is in sealing contact, but the invention is not limited in this, in actual applications, may be omitted with annular boss
28, and it is using the other modes of welding etc. that the upper end for expanding heat insulation loop 29 is in sealing contact with chuck body 14.
Explanation is needed further exist for, in actual applications, it is also possible to save coldplate 7, i.e. insulating assembly is arranged on card
Between disk body and pedestal.
Used as another technical scheme of the invention, the present invention also provides a kind of plasma processing device, and it includes instead
Chamber is answered, electrostatic chuck is provided with reaction chamber, be used to fix workpiece to be machined by the way of electrostatic attraction, the electrostatic
Chuck employs electrostatic chuck provided in an embodiment of the present invention.
Plasma processing device provided in an embodiment of the present invention, it passes through, using above-mentioned electrostatic chuck, to carry
The efficiency of heating surface and heating uniformity of high beta plasma process equipment, but also the use of plasma processing device can be reduced
Cost.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (13)
1. a kind of electrostatic chuck, including for carrying the chuck and pedestal of workpiece to be machined, the chuck includes chuck body, sets
Electrostatic attraction electrode and heating unit in the chuck body are put, the electrostatic attraction electrode is connected with dc source, be used to using quiet
Be fixed on workpiece to be machined on the chuck by the mode of electric attraction；The heating unit is used to heat the workpiece to be machined；
The pedestal is arranged on the lower section of the chuck body, is used to support and fix the chuck body；Characterized in that, described
Insulating assembly is provided between chuck body and pedestal, the insulating assembly includes expansion heat insulation loop and cooling unit, wherein
The expansion heat insulation loop is the thin-walled workpiece of closure, and its upper/lower terminal is sealed with the chuck body and pedestal respectively
Contact；
The cooling unit is used to cool down the expansion heat insulation loop, and the cooling unit includes cooling media source and cooling ring, its
In, the cooling ring be located between the chuck body and pedestal, and be looped around it is described expansion heat insulation loop on the inside or outside of set
Put, and the cooling duct of annular is provided with the cooling ring, the cooling media source is used in the cooling duct
It is passed through cooling media.
2. electrostatic chuck according to claim 1, it is characterised in that be formed with ring in the upper end of the expansion heat insulation loop
Shape boss, and the first sealing is provided between the upper surface of annular boss and the lower surface of the chuck body on described
Part, is used to seal gap therebetween.
3. electrostatic chuck according to claim 1 and 2, it is characterised in that be formed with the lower end of the expansion heat insulation loop
Lower annular boss, and it is provided with the second sealing between the lower surface of the lower annular boss and the upper surface of the pedestal
Part, is used to seal gap therebetween；Or
The lower end of the expansion heat insulation loop is sealed with the upper surface of the pedestal by the way of welding.
4. electrostatic chuck according to claim 1, it is characterised in that the cooling media includes cooling liquid or cooling
Gas.
5. electrostatic chuck according to claim 1, it is characterised in that set between the pedestal and the chuck body
There is coldplate, be used to intercept the heat that is produced by the chuck body towards the base radiation；And
It is described expansion heat insulation loop be located between the chuck body and coldplate, and its upper/lower terminal respectively with the chuck sheet
Body and coldplate are in sealing contact, and the expansion heat insulation loop, the closing of formation one between the chuck body and the coldplate
Space.
6. electrostatic chuck according to claim 5, it is characterised in that the lower surface of the cooling ring is stacked in the cooling
On the upper surface of plate, and the entrance and exit connected with the cooling duct is formed with the lower surface of the cooling ring；
The upper end position of first passage and second channel, the first passage and second channel is respectively arranged with the coldplate
In the upper surface of the coldplate, and it is connected with the entrance and exit respectively；The lower end of the first passage and second channel
Positioned at the lower surface of the coldplate, and it is connected with the cooling media source；And
The 3rd seal is provided between the lower surface of the cooling ring and the upper surface of the coldplate, is used to described
The junction that one passage and second channel are connected with the entrance and exit respectively is sealed.
7. electrostatic chuck according to claim 5, it is characterised in that be provided between the chuck body and coldplate
Support ring, is used to support the chuck body；Also, the support ring is nested with the heat-insulated central spacer of expansion to be set, and institute
State the internal diameter of the external diameter less than the expansion heat insulation loop of support ring.
8. electrostatic chuck according to claim 7, it is characterised in that the quantity of the support ring is one or more, and
The internal diameter of multiple support rings is different, and is spaced nested setting.
9. electrostatic chuck according to claim 8, it is characterised in that the quantity of the support ring is, and will be described
Sealing space be divided into the central area and fringe region for corresponding respectively to the chuck body lower surface the first subspace and
Second subspace.
10. electrostatic chuck according to claim 9, it is characterised in that on the upper surface of the coldplate, and position respectively
In the first venthole and the second outlet that the cooling plate thickness is provided through in first subspace and the second subspace
Hole, heat-conducting gas respectively enters first subspace and the second subspace by first venthole and the second venthole
It is interior；Also,
Center passage of heat and edge passage of heat are respectively arranged with the chuck body, wherein, the center heat conduction is led to
The lower end in road connects with first subspace, the center of chuck body upper surface described in the upper end of the center passage of heat
Domain connects；The lower end of the edge passage of heat connects with second subspace, the upper end of the edge passage of heat and institute
State the fringe region connection of chuck body upper surface.
11. electrostatic chucks according to claim 7, it is characterised in that the support ring uses stainless steel or Ni-Co-Fe
Alloy makes.
12. electrostatic chucks according to claim 1, it is characterised in that the expansion heat insulation loop uses stainless steel or Ni-
Co-Fe alloys make.
A kind of 13. plasma processing devices, it includes reaction chamber, and electrostatic chuck is provided with the reaction chamber, uses
To fix workpiece to be machined by the way of electrostatic attraction, it is characterised in that the electrostatic chuck is using in claim 1-12
Electrostatic chuck described in any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310354114.1A CN104377155B (en) | 2013-08-14 | 2013-08-14 | Electrostatic chuck and plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310354114.1A CN104377155B (en) | 2013-08-14 | 2013-08-14 | Electrostatic chuck and plasma processing device |
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| Publication Number | Publication Date |
|---|---|
| CN104377155A CN104377155A (en) | 2015-02-25 |
| CN104377155B true CN104377155B (en) | 2017-06-06 |
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| CN201310354114.1A Active CN104377155B (en) | 2013-08-14 | 2013-08-14 | Electrostatic chuck and plasma processing device |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101680071B1 (en) * | 2015-05-18 | 2016-11-28 | (주)에스티아이 | Heating device and heating method |
| JP2017028111A (en) * | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | Plasma processing device |
| JP6877133B2 (en) * | 2016-03-28 | 2021-05-26 | 株式会社日立ハイテク | Plasma processing equipment and plasma processing method |
| WO2020073779A1 (en) * | 2018-10-11 | 2020-04-16 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and reaction cavity |
| CN109767968B (en) * | 2018-12-17 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Lower electrode structure and reaction chamber |
| CN111613509B (en) * | 2019-02-25 | 2023-07-11 | 北京北方华创微电子装备有限公司 | Chuck structure and reaction chamber |
| CN110289241B (en) * | 2019-07-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, manufacturing method thereof, process chamber and semiconductor processing equipment |
| CN113053775B (en) * | 2019-12-27 | 2024-04-09 | 中微半导体设备(上海)股份有限公司 | Wafer temperature controller, wafer temperature controller system, wafer temperature control method and plasma processing device |
| CN112144033B (en) * | 2020-09-09 | 2022-12-09 | 北京北方华创微电子装备有限公司 | Base assembly and semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468208A (en) * | 2010-11-16 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck and semiconductor processing device |
| CN102870200A (en) * | 2010-04-30 | 2013-01-09 | 应用材料公司 | Apparatus for radial delivery of gas to a chamber and methods of use thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
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2013
- 2013-08-14 CN CN201310354114.1A patent/CN104377155B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102870200A (en) * | 2010-04-30 | 2013-01-09 | 应用材料公司 | Apparatus for radial delivery of gas to a chamber and methods of use thereof |
| CN102468208A (en) * | 2010-11-16 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chuck and semiconductor processing device |
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| CN104377155A (en) | 2015-02-25 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |