CN104360697B - A kind of three-phase inversion system IGBT module power temperature controls and detection device - Google Patents
A kind of three-phase inversion system IGBT module power temperature controls and detection device Download PDFInfo
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Abstract
The present invention is that a kind of three-phase inversion system IGBT module power temperature controls and detection device, the composition of this device includes: rectifying and pressure-regulating filter circuit, three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system, relay, radiator fan, three-phase tunable load, IGBT module gate pole SPWM signal control circuit and computer, wherein, the input of three-phase inverter bridge circuit connects rectifying and pressure-regulating filter circuit, three-phase inverter bridge circuit outfan connects three-phase tunable load, gate pole SPWM signal control circuit outfan connects the gate pole of IGBT module in three-phase inverter bridge circuit；Temperature sensor, temperature acquisition storage system and relay are sequentially connected with, and relay connects radiator fan and three-phase tunable load respectively, and temperature sensor is connected with three-phase inverter bridge circuit respectively with radiator fan；Invention can be automatically obtained the control to IGBT module copper soleplate temperature, completes power and the temperature test to IGBT module reliability effect.
Description
Technical field
The invention belongs to a kind of detection assay device in power electronic devices field, particularly to completing to simulate IGBT (absolutely
Edge grid bipolar transistor) the detection assay device of power model actual operating conditions.
Background technology
The effect played in all kinds of electrical energy changers along with power electronic devices such as insulated gate bipolar transistors (IGBT) is got over
Coming the most important, IGBT power model is just towards high frequency, high-power, Highgrade integration development, and this will necessarily make it obtain more
Add and be widely applied space, but this caloric value also resulting in module increases substantially, and under limited radiating condition, electricity
The module temperature that heat effect causes raises, and the electric heating of accelerating module is tired, when heat exhaustion accumulation is serious, and the service behaviour of system
Can be decreased obviously.In various converter plants, the functional failure of electromechanical that power model inefficacy causes accounts for a big chunk of system failure rate,
And the most serious loss may be caused to whole system.
Significantly temperature fluctuation will cause the fatigue fracture of IGBT module package assembling or material, and temperature change can cause the genus of material
Property change, and thus bring the change of capacitance, resistance value etc., this transmission characteristic necessarily affecting electric signal and IGBT mould
The electric heating degree of fatigue of the various electric parameters of block, the power cycle intensity of module and temperature fluctuation and module and deterioration level it
Between there is very close relationship.
In conventional test, it is all by building direct-flow voltage regulation source, IGBT module and the composition such as drive circuit, ohmic load thereof
Circuit, as the hookup of research IGBT module electric parameter, such assay device and the work of actual IGBT module
Occasion difference is relatively big, and under actual condition, the electric parameter of IGBT module and temperature characterisitic are difficult to again detection, so reliability
It is difficult to effective online evaluation.
" a kind of IGBT module temperature checking method " (number of patent application: CN201210230805) patent is mainly by gathering NTC
The voltage of critesistor detects IGBT temperature, it is to avoid IGBT is overheated to be burnt；" IGBT temperature is utilized to control inverter output work
The Circuits System of rate fall volume " (number of patent application: CN201220497550) patent is without additional additional temperature sensor, by closing
The detection means of reason, improves temperature detecting precision, improves the service behaviour of inverter overheating protection；" a kind of high-power IGBT
Temperature acquisition protection circuit " (number of patent application: CN201310314640) patent detects IGBT temperature in real time, can take in time
Protective measure, improves the reliability of equipment work.Above patent is all for IGBT module temperature, is acquired temperature data
Process, improve IGBT functional reliability, but be all not related to inversion system IGBT module power and temperature detection and the examination of control
Experiment device.
In order to ensure and improve the functional reliability of IGBT module, it is ensured that convertor equipment etc. are properly functioning, so in the urgent need to one
Simulate IGBT module real work situation and can detect and control the assay device of IGBT module power and temperature.
Summary of the invention
The purpose of the present invention is the deficiency for current techniques, it is provided that a kind of three-phase inversion system IGBT module power temperature controls
And detection device, it is right that this device is realized by the collector current of control IGBT module, collection emitter voltage and gate pole switching frequency
The control of IGBT module power, is connected with radiator fan and load by temperature acquisition system, it is achieved real time temperature collection, and energy
The enough control realized IGBT module temperature；Inversion system DC bus-bar voltage can be changed access load with regulation and cooperate and reach
Control the purpose of IGBT module collector current and collection emitter voltage, and then realize the power of IGBT module is controlled；Energy
Drive the frequency of signal to be controlled the gate pole SPWM of IGBT by external key, and can be implemented in continuous working condition
Under, change SPWM signal frequency in real time；Temperature data can be adopted in real time with temperature data collecting system by temperature sensor
Collection and storage, and by arranging the different temperature value bounds controlling relay, radiator fan and access load are controlled,
Realize the control to module copper base temperature, and there is the function of overheat protector, Failure Alarm.
The technical scheme is that
A kind of three-phase inversion system IGBT module power temperature controls and detection device, including: rectifying and pressure-regulating filter circuit, three
Phase bridge inverter main circuit, temperature sensor, temperature acquisition storage system, relay, radiator fan, three-phase tunable load, IGBT
Module gate pole SPWM signal control circuit and computer, its annexation is: the input of three-phase inverter bridge circuit connects rectification
Pressure regulation filter circuit, three-phase inverter bridge circuit outfan connects three-phase tunable load, gate pole SPWM signal control circuit outfan
Connect the gate pole of IGBT module in three-phase inverter bridge circuit；Temperature sensor, temperature acquisition storage system and relay are successively
Connecting, relay connects radiator fan respectively and three-phase tunable load, temperature sensor and radiator fan are inverse with three-phase bridge respectively
Power transformation road is connected；Temperature data acquisition and storage system are connected with computer.
Described regulator rectifier circuit is born anti-by circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage
Feedback module, potentiometer Rw, transformator T1 and insurance FU1 composition；Its connected mode is: circuit breaker Q connects input AC 220V
Main line；The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module and the height of transformator T1
Pressure side is connected with input main line respectively；Transformator T1 low-pressure end is connected with single-phase bridge full-controlled rectifier module low pressure, input end；Directly
The voltage controling end of stream negative voltage feedback module connects potentiometer Rw, and pressure feedback port connects single-phase bridge full-controlled rectifier module direct current
Outfan, con end is connected with single-phase bridge full-controlled rectifier module con end；The DC output end of single-phase bridge full-controlled rectifier module
2 DC capacitor Cd in parallel, are connected with three-phase inverter bridge circuit through insurance FU1.
Described three-phase inverter bridge circuit includes three inverter bridge legs, isolation boosting transformator T2, middle catalyst KM1, heat
Relay FR and main switch button SB composition, its connected mode is: three inverter bridge legs, middle catalyst KM1, isolation rise
Pressure transformer T2 is sequentially connected with thermorelay FR；Main switch button SB one end connects 220V feeder ear, and the other end is with middle
The coil of catalyst KM1 and the normally-closed contact of thermorelay FR are sequentially connected；Each brachium pontis installs lower two IGBT module,
Three inverter bridge legs, install 6 IGBT module altogether, and in each IGBT module installation place, have installed Absorption Capacitance Cx1～Cx6,
And each inverter bridge leg all carries overcurrent protection FU.
Described temperature sensor includes 6 independent temperature sensor probes；
Described three-phase tunable load includes the 1st tunable load, the 2nd tunable load and middle catalyst KM2, its connection side
Formula is: middle catalyst KM2 and the 2nd tunable load are joined directly together, and form parallel-connection structure with the 1st tunable load, and are
Three-phase and four-line connection；
Described relay is made up of 5 respective independent relay K 1～K5；
The composition of described IGBT module gate pole SPWM signal control circuit include fpga chip, level shifting circuit, driver,
Warning circuit, gate pole unistor and mu balanced circuit, its connected mode is: fpga chip, level shifting circuit, driver,
Gate pole unistor circuit and mu balanced circuit are sequentially connected, and warning circuit is connected with driver, and the mistake temperature detector of fpga chip
Survey end to be connected with the normally-closed contact of the relay K 1 in relay.
Described three-phase inversion system IGBT module power temperature controls and the operation method of detection device, comprises the following steps:
(1) the upper down tube position of each brachium pontis of three-phase inverter bridge circuit is respectively mounted an IGBT module；
(2) device for opening, connects the middle catalyst KM1 in three-phase inverter bridge circuit, checks that each instrument displays whether normally,
Device initializes, and arranges test parameters, is respectively as follows:
1. adjust initial DC busbar voltage: close main circuit switch, check whether each instrument shows normally, adjust and be used for controlling
The external potentiometer (0～20k Ω) of thyristor rectifier bridge, adjusts DC bus-bar voltage and asks that test needs magnitude of voltage；
2. adjust and be initially accessed load value: initial load uses the adjustable porcelain disc resistor of high power three-phase (the 1st load), according to
Need the IGBT module collector current value set, regulating load in the range of 0～80 Ω；
3. IGBT module gate-drive SPWM signal frequency is set, by fpga chip external frequency detecting input KEY+ and
KEY-changes SPWM signal frequency, and highest frequency is set to 30KHz, and low-limit frequency is set to 500Hz, often by a KEY+
Frequency rises 500Hz, presses KEY-frequency and declines 500Hz；
4. the operating temperature upper and lower bound value of Single-chip Controlling relay it is set, controls IGBT module radiator fan and the 2nd negative
The access carried and disconnection:
A., the excess temperature critical temperature upper limit is set, is that relay 1 action is defeated when IGBT module copper base temperature reaches critical temperature H1
Going out high level, fpga chip detects that high level inputs, and stops the output of SPWM signal, and overtemperature alarm；
B. by arranging the ceiling temperature H2 and lower limit temperature L2 controlling relay 2, IGBT module copper base is maintained examination
Testing the fluctuation of predetermined temperature interval, when IGBT module copper base temperature reaches ceiling temperature H2, relay closes, and opens heat radiation
IGBT module copper base is dispelled the heat by fan；When detecting that temperature is down to L2, relay 2 disconnects, and stops heat radiation, or
Regulate fan wind speed by pressure regulation, and then control cooling rate；
C. pass through to arrange temperature value H3 corresponding when controlling relay 3 action, IGBT module copper base temperature is maintained test
Predetermined temperature value, when IGBT module copper base temperature reaches H3, relay 3 accesses fan, when temperature is down to below H3,
Relay 3 disconnects fan；
D., when IGBT module power temperature is affected by the change of needs fictitious load, need by relay 4 and relay 5
Cooperating and change the size accessing the 2nd load, when detecting IGBT module copper base temperature and being L4, relay 4 action connects
Enter load；When detecting temperature and being H5, relay 5 action, disconnecting consumers；
(3) opening temperature acquisition system, Guan Bi inversion system and load the auxiliary reclay being connected, device initially enters duty；
(4) device is in running, detects SPWM signal frequency button, when detecting that key-press input changes,
Correspondence is changed fpga chip output SPWM signal frequency,；
(5) device is in running, detects IGBT module copper base temperature, when its reach temperature marginal value is set time,
The corresponding actuating of relay, and then control being switched in or out of radiator fan and being switched in or out of the second load.
(6) device is in running, detects its work the most normal, when IGBT module excess temperature, short circuit occur, and load overcurrent,
During the disconnected equal fault of inversion system output, system automatically shuts down；
(7) through above, (4)～(6) detecting step reaches to test after stable state, by preset port, to IGBT module system
Electric parameter be detected and stored.
(8) one take turns after test completes, press X button, system stalls.
The most if desired proceed test, repeat above-mentioned (1)～(7) process, otherwise carry out next step；
(10) the test data that post processing collects, electric parameter important to the IGBT module collected carries out subsequent treatment, utilizes
Collector current and collection emitter voltage data, can calculate instantaneous power and the mean power of IGBT module, analyze stable state collection emitter-base bandgap grading
Change in voltage trend etc., and then the electric property of research IGBT module and degradation trend etc..
(11) terminate test.
On described three-phase inverter bridge circuit, the method being respectively mounted IGBT module of each brachium pontis, comprises the following steps: each
IGBT module copper base installs a fin, is uniformly coated with the thermal conductive silicon of one layer of about 2 μm between fin and module copper base
Fat, fin leaves a through hole in the underface of the internal igbt chip of IGBT module, and temperature sensor probe via through holes is to IGBT
Module copper base carries out thermometric.
Beneficial effects of the present invention and a little:
(1) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, it is possible to be automatically obtained IGBT mould
The control of block copper base temperature, completes power and the temperature test to IGBT module reliability effect, need not in process of the test
Human intervention, shortens whole test period.
(2) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, belongs to the knot of the equal open loop of front stage
Structure, can carry out device initialization according to test requirements document, to inversion direct current busbar voltage, the first load, can bear at device
Arbitrarily arrange in the range of voltage, electric current and power, i.e. under simulation actual working environment, control the collection emitter-base bandgap grading electricity of IGBT module
Pressure and collector current.
(3) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, it is possible to realize at sine wave output
In the case of frequency is constant, change IGBT module gate-drive SPWM signal frequency, the change of checking IGBT module switching frequency
Impact on modular power, and can be in the case of inverter works continuously, according to test requirements document, to SPWM signal frequency
Adjust in real time.
(4) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, it is possible to by the cuprio of IGBT module
Plate temperature maintains near its temperature range that can bear any or temperature value.
(5) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, had stream, disconnected phase, short circuit,
When overheat protector, IGBT module or whole device section failure, it is automatically switched off whole system and reports to the police.
(6) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, is reserved with IGBT module collection emitter-base bandgap grading
The electric parameter such as voltage, collector current detection port, can use oscillograph or data collecting card to IGBT module very easily
Important electric parameter detects.
(7) the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, has complete data protection merit
Can, accident power-off is not lost, and after power up, does not destroys to preserve data, and test data is permanently archived computer, conveniently turns
Deposit, check and print.
Accompanying drawing explanation
The structural representation of Fig. 1 present invention
Fig. 2 agent structure of the present invention connects figure
Fig. 3 temperature acquisition and temperature control schematic diagram
Fig. 4 IGBT module gate-drive connects figure
Fig. 5 SPWM based on FPGA signal generating structure figure
The process of the test flow chart of Fig. 6 present invention
Fig. 7 IGBT switching frequency and the graph of a relation of its copper base temperature
Fig. 8 IGBT collector current and the graph of a relation of its copper base temperature
Fig. 9 controls IGBT copper base temperature range variation diagram
Detailed description of the invention (illustrates in conjunction with accompanying drawing)
Embodiment:
As it is shown in figure 1, the three-phase inversion system IGBT module power temperature of the present invention controls and detection device, including: rectification
Pressure regulation filter circuit 1, three-phase inverter bridge circuit 2, temperature sensor 3, temperature acquisition store system 4, relay 5, dissipate
Hot-air fan 6, three-phase tunable load 7, IGBT module gate pole SPWM signal control circuit 8 and computer 9, its annexation is:
The input of three-phase inverter bridge circuit 2 connects rectifying and pressure-regulating filter circuit 1, and three-phase inverter bridge circuit 2 outfan connects three
Phase tunable load 7, gate pole SPWM signal control circuit 8 outfan connects the door of IGBT module in three-phase inverter bridge circuit 2
Pole, this just constitutes the main body frame of whole device；Temperature sensor 3, temperature acquisition storage system 4, and relay 5 is successively
Connect, relay 5 connect respectively radiator fan 6 and three-phase tunable load 7, temperature sensor 3 and radiator fan 6 respectively with
Three-phase inverter bridge circuit 2 is connected；Temperature data acquisition and storage system 4 are connected with computer 9.
Be illustrated in figure 2 the present invention inverter circuit and input be connected figure with export structure, mainly by regulator rectifier circuit 1,
Three-phase inverter bridge circuit 2 and three-phase tunable load 7 etc. form.
Regulator rectifier circuit 1 is by circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage negative feedback mould
Block, potentiometer Rw, transformator T1 and insurance FU1 composition；Its connected mode is: circuit breaker Q connects input AC 220V master
Circuit；The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module and the high pressure of transformator T1
End is connected with input main line respectively；Transformator T1 low-pressure end is connected with single-phase bridge full-controlled rectifier module low pressure, input end；Direct current
The voltage controling end of negative voltage feedback module connects potentiometer Rw, and it is defeated that pressure feedback port connects single-phase bridge full-controlled rectifier module direct current
Going out end, con end is connected with single-phase bridge full-controlled rectifier module con end；The DC output end of single-phase bridge full-controlled rectifier module is also
Join 2 DC capacitor Cd, be connected with three-phase inverter bridge circuit 2 through insurance FU1.
220V alternating current, through single-phase bridge full-controlled rectifier module rectification, is output as DC pulse moving voltage and enters through 2 parallel connection direct electric capacity
Row filters, and output DC voltage is acquired by the DC voltage negative feedback module moment, manually can be controlled by external potentiometer Rw
System realizes the regulation to inversion system DC bus-bar voltage amplitude.Wherein: circuit breaker Q model is CDB6v63, and single-phase bridge is complete
Control rectification module model is DQZ-220D120E, and DC capacitor Cd size is 3300 μ F, and DC voltage negative feedback module model is
MK-ZF/120-500E, potentiometer Rw size is 1～20k Ω, and transformator T1 no-load voltage ratio is 220V～18V, insurance FU1 maximum electricity
Stream is 40A.
Three-phase inverter bridge circuit 2 includes three inverter bridge legs, isolation boosting transformator T2, middle catalyst KM1, hot relay
Device FR and main switch button SB composition, its connected mode is: three inverter bridge legs, middle catalyst KM1, isolation boostings become
Depressor T2 is sequentially connected with thermorelay FR；Main switch button SB one end connects 220V feeder ear, and the other end contacts with centre
The coil of device KM1 and the normally-closed contact of thermorelay FR are sequentially connected；Each brachium pontis installs lower two IGBT module, three
Inverter bridge leg, installs 6 IGBT module altogether, and in each IGBT module installation place, has installed Absorption Capacitance Cx1～Cx6,
And each inverter bridge leg all carries overcurrent protection FU.The three-phase of Converting Unit outfan is respectively U phase, V phase and W phase, inversion
Output three-phase electricity (U phase, V phase and W phase) is through middle catalyst KM1, then after isolation boosting transformator T2 boosts, leads to
Overtemperature relay FR powers to three-phase tunable load 3.So, booster transformer coordinates with tunable load, then reaches to need IGBT
While module collector current Ic, it is achieved output minimizes.Wherein, in the present embodiment, isolation boosting transformator T2 adopts
Being 60V～380V/400V by no-load voltage ratio, middle catalyst KM1 uses model to be CJX2-25, and thermorelay FR employing model is
JR36-20。
Three-phase tunable load 7 includes the 1st tunable load, the 2nd tunable load and middle catalyst KM2, and its connected mode is:
Middle catalyst KM2 and the 2nd tunable load are joined directly together, and form parallel-connection structure with the 1st tunable load, and are three-phase four
Line connection.Wherein, in the 1st tunable load and the 2nd tunable load, each adjustable resistance all uses high-power adjustable porcelain dish resistance,
Resistance is 0～150 Ω/1500W, and middle catalyst KM2 uses model to be CJX2-25.
It is illustrated in figure 3 temperature acquisition and the temperature control system schematic diagram of the present invention, mainly includes temperature sensor 3, temperature
Gather and storage system 4, relay 5, radiator fan 6, computer 9 and middle catalyst KM2 composition, its connected mode
It is: temperature sensor 3, temperature data acquisition and storage system 4 and relay 5 are sequentially connected, temperature data acquisition and storage
System 4 is connected with computer 9 by USB interface, and radiator fan 6 is connected with relay 5 with middle catalyst KM2 simultaneously.
Computer 9 is general industry computer.
Temperature sensor 3 includes 6 independent temperature sensor probes, is used for gathering three-phase inverter bridge circuit 2 temperature, and
Being connected with the temperature acquisition port of temperature data acquisition and storage system 4, temperature data acquisition and storage system 4 gather also simultaneously
Storing 6 groups of temperature datas, wherein the power end Vcc of the first temperature sensor probe, data I/O end and ground Gnd end are the most right
Answer the port 1.1～1.3 of temperature data acquisition and storage system 4, other temperature sensor, by that analogy；Temperature data acquisition
And temperature data is processed by storage system 4 by built-in single-chip microcomputer, and the data gathered are passed through the incoming calculating of USB interface
Machine, is stored in computer by temperature data, has 9 external button KEY1～KEY9, for arranging the correspondence of relay 5 action
Temperature bound；Temperature data acquisition and storage system 4 also have 5 output control terminal X1～X5 respectively with in relay 5
The power supply negative pole of relay K 1～K5 is sequentially connected, and the power supply positive pole of relay K 1～K5 is connected with+5V power supply.Wherein, relay
Device 5 is made up of 5 respective independent relay K 1～K5, and temperature sensor probe model is DS18B20, detects temperature range
For-55 DEG C～+125 DEG C (precision ± 0.1 DEG C), temperature data acquisition and storage system 4 well-known device, its model is
SZ06-(09-4)。
The normally-closed contact of relay K 1 is connected with the excess temperature test side of IGBT module gate pole SPWM signal control circuit 8, public tactile
Point ground connection；Relay K 2 coordinates with relay K 3 and controls being switched on or switched off of radiator fan 6, relay K 2 and K3 public
Contact is connected with+12V power supply, and normally opened contact is all connected with radiator fan 6, radiator fan 6 other end ground connection；Relay K 4
Common connect 220V Alternating Current Power Supply, normally opened contact connect relay K 5 normally-closed contact, the common of relay K 5 with
Middle catalyst KM2 coil connects, and the middle catalyst KM2 coil other end connects the other end of 220V Alternating Current Power Supply, relay
Device K4 coordinates catalyst KM2 in the middle of control with relay K 5, and middle catalyst KM2 is used for controlling in three-phase tunable load 7
Being switched in or out of the 2nd tunable load.Wherein, relay K 1～K5 model is SRD-05VDC-SL-C, and radiator fan 6 is adopted
Use 220V Alternating Current Power Supply.
It is illustrated in figure 4 IGBT module gate pole SPWM signal control circuit 8 structural representation, mainly by fpga chip, level
Change-over circuit, driver, warning circuit, gate pole unistor and mu balanced circuit composition, its connected mode is: fpga chip,
Level shifting circuit, driver, gate pole unistor circuit and mu balanced circuit are sequentially connected, warning circuit and driver phase
Connect, and the excess temperature test side of fpga chip is connected with the normally-closed contact of the relay K 1 in relay 5.
Level-conversion circuit is made up of the 6 mutually isostructural circuit in tunnel, and the 1st tunnel connected mode is: 8 feet of boost chip are powered,
Voltage is+24V, the input of the SPWM signal that 2 feet export as fpga chip, connects filter capacitor C7 between 5 feet and 8 feet,
And 5 foot ground connection, 6 feet and the series connection of 7 feet export as boost chip, outfan through parallel connection+15V Zener diode by resistance R2
The SPWM1 signal finally exported as level-conversion circuit.The like, other 5 tunnel connected mode and the 1st tunnel connected mode
Identical.Level-conversion circuit mainly uses boost chip to coordinate with+15V stabilivolt DZ1, through level-conversion circuit by FPGA core
The 3.3V high level of sheet output is converted to the input as driver of the 15V high level.
Through 6 road SPWM signals of level-conversion circuit be divided into 3 groups (SPWM1 Yu SPWM4, SPWM3 Yu SPWM6, SPWM5 with
SPWM2), the 2 road signals often organized export respectively as the input signal of V-TOP and the V-BOT foot of a driver, driver
Signal is connected with gate pole unistor circuit, and each driver is all connected to respective warning circuit by foot error.Warp
The 2 road SPWM signals of same group are converted to high level+15V and low level-8V, and mutually isolated signal by driver, with
Time substantially increase the driving force of signal.
Gate pole unistor and mu balanced circuit are made up of the 6 mutually isostructural circuit in tunnel, and the 1st tunnel connected mode is: driver is defeated
Go out SWPM1 signal connect open resistance Ron respectively by two in parallel, reverse diodes and close resistance break Roff, as IGBT
Modular door electrode resistance；Export with unistor circuit after 15V Zener diode DZ2 and reverse 8V Zener diode DZ3 series connection
End parallel connection, is connected to IGBT gate pole, connects resistance R3 between IGBT gate pole is with emitter stage simultaneously.The like, other are 5 years old
Road connected mode is identical with the 1st tunnel connected mode.
Warning circuit is corresponding with driver, and three driver corresponding 3 duplicate warning circuits in road respectively, wherein 1 tunnel connects
Mode is :+15V power supply is sequentially connected with resistance R5, R6 and driver error end；Resistance R4 is connected to+15V and supplies
Between electricity power supply and driver error end；The base stage of audion V1 is connected between resistance R5 and R6 by resistance R8, sends out
Emitter-base bandgap grading is connected with driver error end, and colelctor electrode is by being sequentially connected with light emitting diode, resistance R7 and buzzer H and+15V
Power supply is connected.Warning circuit gathers same brachium pontis by the port x 2.5 of driver respectively with X2.1 and X3.5 and X3.1
Pressure drop between colelctor electrode and emitter stage in upper 2 IGBT module opening processes, when the collection emitter voltage drop of arbitrary IGBT is higher than driving
When normal pressure drop given tacit consent to by dynamic device, the error end of driver is become low level from high level, answers ＜ 6mA owing to driver pours into electric current,
So being connected current-limiting resistance R4 between feeder ear with error end.
Wherein fpga chip model is Altera EP1C3T144C8N chip, and boost chip model is TLP250, DZ1 and DZ2
Model be IN5352, DZ3 model be IN5344, C7 be ceramic disc capacitor 0.1 μ F, D1 and D2 model be that IN4007, D3 are
Light emitting diode, V1 is NPN type triode model D882, drive model PSHI2012, and H is buzzer, and resistance R1 is
100 Ω, R2 are 10K Ω, and R3 is 3.3K Ω, and R4 is 10K Ω, and R5 is 20K Ω, and R6 is 1K Ω, and R7 is 10K Ω, Ron
Being 3.3 Ω, Roff is 6 Ω.
It is illustrated in figure 5 SPWM signal generating structure figure based on FPGA, mainly includes external signal detection part, system frequency
Rate is just controlling and is detecting part, DDS control sine wave and triangular wave phase accumulator, three-phase sine-wave phase controller, three-phase
String ripple and triangular wave inquiry table, data comparator and Power MOSFET part composition, its operation principle is: system frequency control
System and test section are allocated as the importation into external signal detection, receive outside SPWM frequency variation signal and excess temperature detection signal, point
Frequency output is for controlling the process of whole program；DDS controls sinusoidal wave and triangular wave phase accumulator, three phase sine wave phase control
Device processed and three-phase sine-wave and triangular wave inquiry table composition DDS control basic framework, are 50Hz and phase contrast for output frequency
It it is the triangular wave of the frequency of 120 ° of three-phase sine-waves and test demand；Data comparator is by sinewave modulation signal and triangular wave
Carrier wave compares output rectangular pulse as SPWM signal；Including two parts in Power MOSFET module, the first will
Bipolar SPWM signal decomposition is complementary two-way SPWM signal, and second exactly for preventing on same half-bridge by 2 road SPWM signals
Two IGBT driven simultaneously turn on, when 2 road SPWM signal switching, and reserved Dead Time, thus obtain driving IGBT
6 road SPWM signals of module.(control system of the present invention is mainly by hard-wired, and temperature controls to use single-chip microcomputer,
The SPWM signal of inversion is by fpga chip control, and computer is used for storing temperature data.)
The three-phase inversion system IGBT module power temperature of the present invention controls and the operation method of detection device, comprises the following steps
(as shown in Figure 6):
(1) three-phase inverter bridge circuit 2 has three inverter bridge legs, and the upper down tube position of each brachium pontis is respectively mounted an IGBT mould
Block, each IGBT module copper base is installed a fin, is uniformly coated with one layer about 100～200 between fin and module copper base
The heat-conducting silicone grease of μm, fin leaves a through hole in the underface of the internal igbt chip of IGBT module, and temperature sensor is visited
Head via through holes carries out thermometric to IGBT module copper base.Wherein, fin uses 6063 aluminum alloy materials, and thermal conductivity is
209W/m.℃(25℃)；Heat-conducting silicone grease uses SHIN-ETSU HANTOTAI G747, and thermal conductivity is 1.09W/m. DEG C.
(2) device for opening, connects the middle catalyst KM1 in three-phase inverter bridge circuit, checks that each instrument displays whether normally,
Device initializes, and arranges test parameters, is respectively as follows:
1. adjust initial DC busbar voltage: close main circuit switch, check whether each instrument shows normally, adjust and be used for controlling
The external potentiometer (0～20k Ω) of thyristor rectifier bridge, adjusts DC bus-bar voltage and asks that test needs magnitude of voltage；
2. adjust and be initially accessed load value: initial load uses the adjustable porcelain disc resistor of high power three-phase (the 1st load), permissible
The IGBT module collector current value set as required, regulating load in the range of 0～80 Ω；
3. IGBT module gate-drive SPWM signal frequency is set, by fpga chip external frequency detecting input KEY+ and
KEY-changes SPWM signal frequency, and highest frequency is set to 30KHz, and low-limit frequency is set to 500Hz, often by a KEY+
Frequency rises 500Hz, presses KEY-frequency and declines 500Hz；
4. the operating temperature upper and lower bound value of Single-chip Controlling relay it is set, controls IGBT module radiator fan and the 2nd negative
The access carried and disconnection:
A., the excess temperature critical temperature upper limit is set, prevents IGBT module inside chip overheated and lost efficacy, when IGBT module copper base temperature
It is that relay 1 action exports high level that degree reaches critical temperature H1, and fpga chip detects that high level inputs, and stops SPWM letter
Number output, and overtemperature alarm；
B. by arranging the ceiling temperature H2 and lower limit temperature L2 controlling relay 2, IGBT module copper base is maintained pre-
Fluctuating in fixed temperature interval, when IGBT module copper base temperature reaches ceiling temperature H2, relay closes, and opens radiator fan
Dispelling the heat IGBT module copper base, when detecting that temperature is down to L2, relay 2 disconnects, and stops heat radiation, it is also possible to
Regulate fan wind speed by pressure regulation, and then control cooling rate；
C. pass through to arrange temperature value H3 corresponding when controlling relay 3 action, IGBT module copper base temperature is maintained predetermined
Temperature value, when IGBT module copper base temperature reaches H3, relay 3 accesses fan, when temperature is down to below H3, continues
Electrical equipment 3 disconnects fan, it is ensured that copper base temperature fluctuates about a certain temperature value.
D., when IGBT module power temperature is affected by the change of needs fictitious load, need by relay 4 and relay 5
Cooperating and change the size accessing the 2nd load, when detecting IGBT module copper base temperature and being L4, relay 4 action connects
Enter load；When detecting temperature and being H5, relay 5 action, disconnecting consumers；The change of load, changes and flows through IGBT module
Collector current, reaches to change the purpose of modular power.
(3) opening temperature acquisition system, Guan Bi inversion system and load the auxiliary reclay being connected, device initially enters duty；
(4) device is in running, fpga chip constantly SPWM signal frequency button is detected (this device run
SPWM signal frequency button is detected 8 times by fpga chip with regard to each second), when detecting that key-press input changes, correspondence is changed
Become fpga chip output SPWM signal frequency, it is possible to achieve under continuous duty, change SPWM signal frequency.
(5) device is in running, and IGBT module copper base temperature is constantly detected by temperature sensor DS18B20, when
It reaches temperature when arranging marginal value, the corresponding actuating of relay, and then controls being switched in or out and second negative of radiator fan
Carry is switched in or out.
(6) device is in running, and fpga chip and driving plate PSHI2012 constantly detect IGBT module and whole dress
Put work the most normal, when IGBT module excess temperature, short circuit occur, load overcurrent, during the disconnected equal fault of inversion system output, be
System automatically shuts down.
(7) after above system, (4)～(6) detecting step reaches to test stable state, by preset port, the electricity to IGBT module
Gas parameter is detected and stored.
(8) one take turns after test completes, press X button, system stalls.
The most if desired proceed test, repeat above-mentioned (1)～(7) process, otherwise carry out next step；
(10) the test data that post processing collects, electric parameter important to the IGBT module collected carries out subsequent treatment, utilizes
Collector current and collection emitter voltage data, can calculate instantaneous power and the mean power of IGBT module, analyze stable state collection emitter-base bandgap grading
Change in voltage trend etc., and then the electric property of research IGBT module and degradation trend etc..
(11) terminate test.
Experimental data processing:
By Matlab software, test the data obtained is processed, analyzes IGBT electric parameter and its copper base temperature relation,
Shown in below figure 7 and Fig. 8, wherein Fig. 7 is not for using radiator fan and collection emitter voltage 60V and collector current 20A not
In the case of change, the graph of a relation of research IGBT switching frequency and its copper base temperature, switching frequency be respectively 500Hz, 2kHz,
5kHz、10kHz；Fig. 8 for do not use radiator fan and collection emitter voltage 60V and switching frequency 10kHz constant in the case of,
Research IGBT collector current and the graph of a relation of its copper base temperature, collector current is respectively 5A, 10A, 20A, 30A.
Fig. 9 keeps 60V constant for collection emitter voltage, changes load simulation actual condition, and and radiation air by preset value
Fan coordinates limit temperature in certain temperature range.
Fig. 7 is by design fpga chip output SPWM signal frequency, and it is right IGBT copper base temperature under difference switching frequency to be carried out
Ratio, along with the climbing of rising IGBT copper base temperature and the stationary value of switching frequency are all rising, it is seen that the switch of IGBT
Frequency on the impact of its copper base temperature substantially, reflects that the rising switching loss along with switching frequency is also rising.Along with IGBT mould
The use of block is degenerated, and can study IGBT module switching frequency and copper base temperature relation, and then research IGBT by this device
Degree of degeneration and switching frequency and copper base temperature relation, for On-line Reliability Estimation and the science of offer of IGBT module in future
Repair schedule provide research platform.
Fig. 8, by arranging DC bus-bar voltage and three-phase adjustable load value, controls the collector current of IGBT module, can see
Going out the increase along with collector current, IGBT module copper base temperature is gradually increasing, and climbing increases substantially, and this device can
To pass through to study in IGBT module gradually degenerative process, under different collector currents, the change of IGBT module copper base temperature
Process, and the change of copper base temperature under identical collector current, and then research is in IGBT module gradually degeneration copper base temperature
Degree and the relation of collector current.
Fig. 9 is by controlling the temperature value corresponding when being switched on or off of radiator fan, and controls three-phase tunable load, it is achieved right
IGBT module copper base range of temperature is controlled, and for research under identical electric condition, the change of temperature is to electrically ginseng
The impact of number and IGBT module operating characteristic provides platform.
Unaccomplished matter of the present invention is known technology.
Claims (6)
1. three-phase inversion system IGBT module power temperature controls and a detection device, it is characterized by that the composition of this device includes:
Rectifying and pressure-regulating filter circuit, three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system, relay group, heat radiation
Fan, three-phase tunable load, IGBT module gate pole SPWM signal control circuit and computer, its annexation is: three-phase bridge
The input of formula inverter circuit connects rectifying and pressure-regulating filter circuit, and three-phase inverter bridge circuit outfan connects three-phase tunable load,
IGBT module gate pole SPWM signal control circuit outfan connects the gate pole of IGBT module in three-phase inverter bridge circuit；Temperature passes
Sensor, temperature acquisition storage system and relay group are sequentially connected with, and relay group connects radiator fan and three-phase adjustable negative respectively
Carrying, temperature sensor is connected with three-phase inverter bridge circuit respectively with radiator fan；Temperature acquisition storage system is connected with computer；
Described rectifying and pressure-regulating filter circuit is by circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage
Negative feedback module, potentiometer Rw, transformator T1 and insurance FU1 composition；Its connected mode is: circuit breaker Q connects input and hands over
Stream 220V main line；The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module and transformator
The high-pressure side of T1 is connected with circuit breaker Q respectively；Transformator T1 low-pressure end is with single-phase bridge full-controlled rectifier module low pressure, input end even
Connect；The voltage controling end of DC voltage negative feedback module connects potentiometer Rw, and pressure feedback port connects single-phase bridge full-controlled rectifier mould
Block DC output end, con end is connected with single-phase bridge full-controlled rectifier module con end；The direct current of single-phase bridge full-controlled rectifier module
Outfan 2 DC capacitor Cd in parallel, are connected with three-phase inverter bridge circuit through insurance FU1；
Described three-phase inverter bridge circuit includes three inverter bridge legs, isolation boosting transformator T2, middle catalyst KM1, heat
Relay FR and main switch button SB composition, its connected mode is: three inverter bridge legs, middle catalyst KM1, isolation rise
Pressure transformer T2 is sequentially connected with thermorelay FR；Main switch button SB one end connects circuit breaker Q, and the other end contacts with centre
The coil of device KM1 and the normally-closed contact of thermorelay FR are sequentially connected；Each inverter bridge leg installs lower two IGBT module,
Three inverter bridge legs, install 6 IGBT module altogether, and six IGBT module installation places, install Absorption Capacitance Cx1～Cx6 successively,
And each inverter bridge leg all carries overcurrent protection FU；
Described three-phase tunable load includes the 1st tunable load, the 2nd tunable load and middle catalyst KM2, its connection side
Formula is: after middle catalyst KM2 and the 2nd tunable load series winding, then forms parallel-connection structure with the 1st tunable load, and is three
Four line connection mutually.
2. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and detection device, it is characterized by institute
The temperature sensor stated includes 6 independent temperature sensor probes.
3. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and detection device, it is characterized by institute
The relay group stated is made up of 5 respective independent relay K 1～K5.
4. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and detection device, it is characterized by institute
The composition of the IGBT module gate pole SPWM signal control circuit stated includes fpga chip, level shifting circuit, driver, warning
Circuit, gate pole unistor circuit and mu balanced circuit, its connected mode is: fpga chip, level shifting circuit, driver,
Gate pole unistor circuit and mu balanced circuit are sequentially connected, and warning circuit is connected with driver, and the mistake temperature detector of fpga chip
Survey end to be connected with the normally-closed contact of the relay K 1 in relay group.
5. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and the operation method of detection device,
It is characterized by comprise the following steps:
(1) the upper down tube position of each inverter bridge leg of three-phase inverter bridge circuit is respectively mounted an IGBT module；
(2) device for opening, connects the middle catalyst KM1 in three-phase inverter bridge circuit, checks that each instrument displays whether normally,
Device initializes, and arranges test parameters, is respectively as follows:
1. initial DC busbar voltage is adjusted: Guan Bi alternating current 220V main line switchs, and checks whether each instrument shows normally, adjusts
The whole potentiometer Rw for controlling thyristor rectifier bridge, DC bus-bar voltage is adjusted to test needs magnitude of voltage；
2. adjust and be initially accessed load value: the 1st tunable load is as initial load, the IGBT module current collection set as required
Electrode current value, regulating load in the range of 0～80 Ω；
3. IGBT module gate pole SPWM signal frequency is set, by fpga chip external frequency detecting input KEY+ and KEY-
Changing SPWM signal frequency, highest frequency is set to 30KHz, and low-limit frequency is set to 500Hz, often by a KEY+ frequency
Rise 500Hz, press KEY-frequency and decline 500Hz；
4. Single-chip Controlling relay group repeat circuit K1～the temperature upper limit of K5 action and lower limit are set, control radiator fan and
The access of the 2nd tunable load and disconnection:
A., excess temperature critical temperature higher limit H1 is set, continues when IGBT module copper soleplate temperature reaches critical temperature higher limit H1
Electrical equipment K1 action output high level, fpga chip detects that high level inputs, and stops the output of SPWM signal, and overtemperature alarm；
B. by arrange control relay K 2 action time corresponding ceiling temperature value H2 and lower-limit temperature value L2, by IGBT mould
Block copper soleplate maintains the fluctuation of experiment predetermined temperature interval, when IGBT module copper soleplate temperature reaches ceiling temperature value H2, continues
Electrical equipment K2 closes, and opens radiator fan and dispels the heat IGBT module copper soleplate, when detecting that temperature is down to L2, and relay
K2 disconnects, and stops heat radiation, wherein regulates radiator fan wind speed by pressure regulation, and then control cooling rate；
C. pass through to arrange temperature value H3 corresponding when controlling relay K 3 action, IGBT module copper soleplate temperature is maintained reality
Testing predetermined temperature, when IGBT module copper soleplate temperature reaches H3, relay K 3 accesses radiator fan, when temperature is decreased to less than
During H3, relay K 3 disconnects radiator fan；
D., when IGBT module power temperature is affected by the change of needs fictitious load, need by relay K 4 and relay
K5 cooperates and changes the size accessing the 2nd tunable load, when detecting IGBT module copper soleplate temperature and being L4, and relay K 4
Action accesses the 2nd tunable load；When detecting temperature and being H5, relay K 5 action, disconnect the 2nd tunable load；
(3) opening catalyst KM1 in the middle of temperature acquisition storage system, Guan Bi, device initially enters duty；
(4) device is in running, detects SPWM signal frequency button, when detecting that key-press input changes,
Correspondence is changed fpga chip output SPWM signal frequency；
(5) device is in running, detects IGBT module copper soleplate temperature, when its reach temperature marginal value is set time,
The corresponding actuating of relay in relay K 1～K5, and then control being switched in or out and the access of the 2nd tunable load of radiator fan
Or disconnect；
(6) device is in running, detects its work the most normal, and when there is IGBT module excess temperature, short circuit, three-phase is adjustable
Load overcurrent, during three-phase inversion system output open-phase fault, system automatically shuts down；
(7) through above, (4)～(6) detecting step reaches to test after stable state, by preset port, to IGBT module system
Electric parameter be detected and stored；
(8) one take turns after test completes, press X button, system stalls；
The most if desired proceed test, repeat above-mentioned (2)～(8) process, otherwise carry out next step；
(10) the test data that post processing collects, electric parameter important to the IGBT module collected carries out subsequent treatment, utilizes
Collector current and collection emitter voltage data, calculate instantaneous power and the mean power of IGBT module, analyze stable state collection emitter voltage
Variation tendency, and then study electric property and the degradation trend of IGBT module；
(11) terminate test.
6. three-phase inversion system IGBT module power temperature as claimed in claim 5 controls and the operation method of detection device,
It is characterized by the method being respectively mounted IGBT module of each inverter bridge leg on described three-phase inverter bridge circuit, including following step
Rapid: each IGBT module copper soleplate installs a fin, uniformly it is coated with leading of one layer of 2 μm between fin and module copper soleplate
Hot silicone grease, fin leaves a through hole in the underface of the internal igbt chip of IGBT module, and temperature sensor via through holes is to IGBT
Module copper soleplate carries out thermometric.
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