CN104360697A - Power-temperature control and detection device for IGBT (insulated gate bipolar transistor) modules of three-phase inverter system - Google Patents
Power-temperature control and detection device for IGBT (insulated gate bipolar transistor) modules of three-phase inverter system Download PDFInfo
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Abstract
The invention discloses a power-temperature control and detection device for IGBT (insulated gate bipolar transistor) modules of a three-phase inverter system. The power-temperature control and detection device comprises a rectifying and voltage-regulating filter circuit, a three-phase bridge inverter circuit, a temperature sensor, a temperature acquisition and storage system, a relay, a cooling fan, a three-phase adjustable load, an IGBT module gate pole SPWM (sinusoidal pulse width modulation) signal control circuit and a computer, wherein the input end of the three-phase bridge inverter circuit is connected with the rectifying and voltage-regulating filter circuit, the output end of the three-phase bridge inverter circuit is connected with the three-phase adjustable load, the output end of the gate pole SPWM signal control circuit is connected with gate poles of the IGBT modules in the three-phase bridge inverter circuit, the temperature sensor, the temperature acquisition and storage system and the relay are connected sequentially, the relay is connected with the cooling fan and the three-phase adjustable load, and the temperature sensor and the cooling fan are connected with the three-phase bridge inverter circuit. The power-temperature control and detection device is capable of controlling the temperature of copper base plates of the IGBT modules automatically and completing tests about influences of the power and the temperature on the IGBT modules.
Description
Technical field
The invention belongs to a kind of detection experiment device in power electronic devices field, particularly can complete the detection experiment device of Simulation with I GBT (insulated gate bipolar transistor) power model actual operating conditions.
Background technology
The effect played in all kinds of electrical energy changer along with power electronic devices such as insulated gate bipolar transistors (IGBT) is more and more important, IGBT power model is just towards high frequency, high-power, Highgrade integration development, this will inevitably make its space that is more widely used, but this can cause the thermal value of module to increase substantially equally, and under limited radiating condition, the module temperature that electrocaloric effect causes raises, the electric heating that will speed up module is tired, when heat fatigue accumulation is serious, the serviceability of system can obviously decline.In various converter plant, the functional failure of electromechanical that power model inefficacy causes accounts for a big chunk of system failure rate, and may cause very serious loss to whole system.
Obvious temperature fluctuation will cause the fatigue break of IGBT module package assembling or material, temperature change can cause the attribute change of material, and bring the change of electric capacity, resistance value etc. thus, this must affect the transport property of electric signal and the various electric parameters of IGBT module, has very close relationship between the electric heating degree of fatigue of the power cycle intensity of module and temperature fluctuation and module and deterioration level.
In test in the past, it is all the circuit by building direct-flow voltage regulation source, IGBT module and the composition such as driving circuit, ohmic load thereof, as the hookup of research IGBT module electric parameter, such test unit differs larger with actual IGBT module workplace, and under actual condition, the electric parameter of IGBT module and temperature characterisitic are difficult to again detect, so reliability is difficult to realize effective online evaluation.
" a kind of IGBT module temperature checking method " (number of patent application: CN201210230805) patent detects IGBT temperature mainly through gathering the voltage of NTC thermistor, avoids that IGBT is overheated to be burnt; (number of patent application: the CN201220497550) patent that " utilizes the Circuits System of IGBT temperature control inverter output power derate " is without the need to additional additional temperature sensor, by rational detection means, improve temperature detecting precision, improve the serviceability of inverter overheating protection; " a kind of high-power IGBT temperature acquisition protection circuit " (number of patent application: CN201310314640) patent detects IGBT temperature in real time, can take safeguard measure in time, improves the reliability of equipment work.Above patent is all for IGBT module temperature, carries out acquisition process to temperature data, improves IGBT functional reliability, but does not all relate to the test unit of inversion system IGBT module power and temperature detection and control.
In order to ensure and improve the functional reliability of IGBT module, guarantee that convertor equipment etc. is normal and run, so can detect in the urgent need to a kind of Simulation with I GBT module real work situation and control the test unit of IGBT module power and temperature.
Summary of the invention
Object of the present invention is the deficiency for current techniques, a kind of three-phase inversion system IGBT module power temperature is provided to control and pick-up unit, this device realizes control to IGBT module power by controlling the collector current of IGBT module, collection emitter voltage and gate pole switching frequency, be connected with load with radiator fan by temperature acquisition system, realize real time temperature collection, and the control to IGBT module temperature can be realized; Can change inversion system DC bus-bar voltage with regulating access load and cooperatively interacts to reach and control IGBT module collector current and collect the object of emitter voltage, and then realization controls the power of IGBT module; Control by the frequency of external key to the gate pole SPWM drive singal of IGBT, and under can be implemented in continuous working situation, change SPWM signal frequency in real time; By temperature sensor and temperature data collecting system, Real-time Collection and storage are carried out to temperature data; and by arranging the temperature value bound of different pilot relays; radiator fan and access load are controlled; realize the control to module copper base temperature, and there is the function of overheat protector, Failure Alarm.
Technical scheme of the present invention is:
A kind of three-phase inversion system IGBT module power temperature controls and pick-up unit, comprise: rectifying and pressure-regulating filtering circuit, three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system, relay, radiator fan, three-phase tunable load, IGBT module gate pole SPWM signal control circuit and computing machine, its annexation is: the input end of three-phase inverter bridge circuit connects rectifying and pressure-regulating filtering circuit, three-phase inverter bridge circuit output terminal connects three-phase tunable load, gate pole SPWM signal control circuit output terminal connects the gate pole of IGBT module in three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system and relay connect successively, and relay connects radiator fan and three-phase tunable load respectively, and temperature sensor is connected with three-phase inverter bridge circuit respectively with radiator fan, temperature data acquisition and storage system are connected with computing machine.
Described regulator rectifier circuit is made up of circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage negative feedback module, potentiometer Rw, transformer T1 and insurance FU1; Its connected mode is: circuit breaker Q connects input AC 220V main line; The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module, to be connected with input main line respectively with the high-pressure side of transformer T1; Transformer T1 low pressure end is connected with single-phase bridge full-controlled rectifier module low pressure input end; The voltage controling end of DC voltage negative feedback module connects potentiometer Rw, and pressure feedback port connects single-phase bridge full-controlled rectifier module DC output end, and con end is held with single-phase bridge full-controlled rectifier module con and is connected; DC output end 2 DC capacitor Cd in parallel of single-phase bridge full-controlled rectifier module, are connected with three-phase inverter bridge circuit through insurance FU1.
Described three-phase inverter bridge circuit comprises three inverter bridge legs, isolation boosting transformer T2, middle contactor KM1, electrothermal relay FR and master switch button SB and forms, and its connected mode is: three inverter bridge legs, middle contactor KM1, isolation boosting transformer T2 are connected successively with electrothermal relay FR; Master switch button SB one end connects 220V feeder ear, and the other end is connected with the normally closed contact of electrothermal relay FR successively with the coil of middle contactor KM1; Each brachium pontis installs lower two IGBT module, three inverter bridge legs, install 6 IGBT module altogether, and in each IGBT module installation place, installed Absorption Capacitance Cx1 ~ Cx6, and each inverter bridge leg all carries overcurrent protection FU.
Described temperature sensor comprises 6 independently temperature sensor probes;
Described three-phase tunable load comprises the 1st tunable load, the 2nd tunable load and middle contactor KM2, its connected mode is: middle contactor KM2 is directly connected with the 2nd tunable load, and form parallel-connection structure with the 1st tunable load, and be three-phase and four-line connection;
Described relay is made up of 5 respective independently relay K 1 ~ K5;
The composition of described IGBT module gate pole SPWM signal control circuit comprises fpga chip, level shifting circuit, driver, warning circuit, gate pole unistor and mu balanced circuit, its connected mode is: fpga chip, level shifting circuit, driver, gate pole unistor circuit and mu balanced circuit are connected successively, warning circuit is connected with driver, and the excess temperature test side of fpga chip is connected with the normally closed contact of the relay K 1 in relay.
Described three-phase inversion system IGBT module power temperature control and the operation method of pick-up unit, comprise the following steps:
(1) the position of pipe up and down of each brachium pontis of three-phase inverter bridge circuit installs an IGBT module respectively;
(2) device for opening, connects the middle contactor KM1 in three-phase inverter bridge circuit, and check that whether the display of each instrument is normal, device carries out initialization, arranges, be respectively test parameters:
1. adjust initial DC busbar voltage: closed main circuit switch, checking whether each instrument shows normally, adjusting the external potentiometer (0 ~ 20k Ω) for controlling thyristor rectifier bridge, ask that test needs magnitude of voltage by DC bus-bar voltage adjustment;
2. adjust and initially access load value: initial load adopts the adjustable porcelain disc resistor of high power three-phase (the 1st load), the IGBT module collector current value set as required, regulating load within the scope of 0 ~ 80 Ω;
3. IGBT module gate-drive SPWM signal frequency is set, SPWM signal frequency is changed by the external frequency detecting input end of fpga chip KEY+ and KEY-, highest frequency is set to 30KHz, low-limit frequency is set to 500Hz, often by a KEY+ frequency rising 500Hz, press KEY-frequency decrease 500Hz;
4. the operating temperature upper and lower bound value of Single-chip Controlling relay is set, controls access and the disconnection of IGBT module radiator fan and the 2nd load:
A. arrange the excess temperature critical temperature upper limit, be that relay 1 action exports high level when IGBT module copper base temperature reaches critical temperature H1, fpga chip detects that high level inputs, and stops SPWM signal to export, and overtemperature alarm;
B. by arranging ceiling temperature H2 and the lower limit temperature L2 of pilot relay 2, IGBT module copper base is maintained the interval fluctuation of test predetermined temperature, when IGBT module copper base temperature reaches ceiling temperature H2, relay closes, opens radiator fan and dispels the heat to IGBT module copper base; When detecting that temperature is down to L2, relay 2 disconnects, and stops heat radiation, or regulates fan wind speed by pressure regulation, and then controls cooling rate;
C. temperature value H3 corresponding time by arranging pilot relay 3 action, IGBT module copper base temperature is maintained test predetermined temperature value, and when IGBT module copper base temperature reaches H3, relay 3 accesses fan, when temperature is down to below H3, relay 3 disconnects fan;
D., when the change of needs fictitious load affects IGBT module power-temperature, needing is cooperatively interacted by relay 4 and relay 5 changes the size of access the 2nd load, when detection IGBT module copper base temperature is L4, and relay 4 action access load; When detected temperatures is H5, relay 5 action, disconnecting consumers;
(3) the auxiliary reclay that is connected with load of open temp acquisition system, closed inversion system, device starts to enter duty;
(4) device is in operational process, detects SPWM signal frequency button, when detecting that key-press input changes, correspondence being changed fpga chip and exporting SPWM signal frequency;
(5) device is in operational process, detects IGBT module copper base temperature, when its reach temperature critical value is set time, the corresponding actuating of relay, and then control the access of radiator fan or the access of disconnection and the second load or disconnection.
(6) device is in operational process, whether normally detects its work, when generation IGBT module excess temperature, short circuit, and load overcurrent, when inversion system exports disconnected equal fault, system automatically shuts down;
System through above (4) ~ (6) detecting step reach test stable state after, by preset port, the electric parameter of IGBT module is detected and stores.
(8) one take turns after test completes, press X button, system stalls.
(9) if desired proceed test, repeat (1) above-mentioned ~ (7) process, otherwise carry out next step;
(10) the test figure that collects of aftertreatment, subsequent treatment is carried out to the important electric parameter of the IGBT module collected, utilize collector current and collection emitter voltage data, instantaneous power and the average power of IGBT module can be calculated, analyze stable state collection emitter voltage variation tendency etc., and then the electric property of research IGBT module and degradation trend etc.
(11) terminate test.
The method of installing IGBT module respectively of each brachium pontis on described three-phase inverter bridge circuit, comprise the following steps: each IGBT module copper base installs a heat radiator, the heat-conducting silicone grease of about 2 μm of one deck is evenly coated with between heat radiator and module copper base, heat radiator leaves a through hole immediately below the inner igbt chip of IGBT module, and temperature sensor probe via through holes carries out thermometric to IGBT module copper base.
Beneficial effect of the present invention and a little:
(1) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, automatically the control to IGBT module copper base temperature can be realized, complete power and temperature to the test of IGBT module reliability effect, in process of the test, do not need human intervention, shorten whole test period.
(2) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, belong to the structure of the equal open loop of front stage, device initialization can be carried out according to testing requirements, to inversion direct current busbar voltage, first load, arrange arbitrarily in the scope of voltage, electric current and the power that can bear at device, namely under simulation actual working environment, control collection emitter voltage and the collector current of IGBT module.
(3) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, can realize when sine wave output frequency is constant, change IGBT module gate-drive SPWM signal frequency, the change of checking IGBT module switching frequency is on the impact of modular power, and can when inverter continuous working, according to testing requirements, SPWM signal frequency is adjusted in real time.
(4) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, the copper base temperature of IGBT module can be maintained near its temperature range that can bear any or temperature value.
(5) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, has overcurrent, disconnected phase, short circuit, overheat protector, when IGBT module or whole device section failure, automatically closes whole system and report to the police.
(6) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, be reserved with the electric parameter detection port such as IGBT module collection emitter voltage, collector current, oscillograph or data collecting card can be used very easily to detect the important electric parameter of IGBT module.
(7) three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, and have complete data protection function, accident power-off is not lost; after power up, do not destroy to preserve data, test figure is forever stored in computing machine; facilitate unloading, check and print.
Accompanying drawing explanation
Fig. 1 structural representation of the present invention
Fig. 2 agent structure connection layout of the present invention
Fig. 3 temperature acquisition and temperature control schematic diagram
Fig. 4 IGBT module gate-drive connection layout
Fig. 5 is based on the SPWM signal generating structure figure of FPGA
Fig. 6 process of the test process flow diagram of the present invention
The graph of a relation of Fig. 7 IGBT switching frequency and its copper base temperature
The graph of a relation of Fig. 8 IGBT collector current and its copper base temperature
Fig. 9 control IGBT copper base temperature range variation diagram
Embodiment (illustrating by reference to the accompanying drawings)
Embodiment:
As shown in Figure 1, three-phase inversion system IGBT module power temperature of the present invention controls and pick-up unit, comprise: rectifying and pressure-regulating filtering circuit 1, three-phase inverter bridge circuit 2, temperature sensor 3, temperature acquisition storage system 4, relay 5, radiator fan 6, three-phase tunable load 7, IGBT module gate pole SPWM signal control circuit 8 and computing machine 9, its annexation is: the input end of three-phase inverter bridge circuit 2 connects rectifying and pressure-regulating filtering circuit 1, three-phase inverter bridge circuit 2 output terminal connects three-phase tunable load 7, gate pole SPWM signal control circuit 8 output terminal connects the gate pole of IGBT module in three-phase inverter bridge circuit 2, this just forms the main body frame of whole device, temperature sensor 3, temperature acquisition storage system 4, and relay 5 connects successively, relay 5 connects radiator fan 6 and three-phase tunable load 7 respectively, and temperature sensor 3 is connected with three-phase inverter bridge circuit 2 respectively with radiator fan 6, temperature data acquisition and storage system 4 are connected with computing machine 9.
Be illustrated in figure 2 inverter circuit of the present invention and constrained input anatomical connectivity figure thereof, primarily of compositions such as regulator rectifier circuit 1, three-phase inverter bridge circuit 2 and three-phase tunable loads 7.
Regulator rectifier circuit 1 is made up of circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage negative feedback module, potentiometer Rw, transformer T1 and insurance FU1; Its connected mode is: circuit breaker Q connects input AC 220V main line; The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module, to be connected with input main line respectively with the high-pressure side of transformer T1; Transformer T1 low pressure end is connected with single-phase bridge full-controlled rectifier module low pressure input end; The voltage controling end of DC voltage negative feedback module connects potentiometer Rw, and pressure feedback port connects single-phase bridge full-controlled rectifier module DC output end, and con end is held with single-phase bridge full-controlled rectifier module con and is connected; DC output end 2 DC capacitor Cd in parallel of single-phase bridge full-controlled rectifier module, are connected with three-phase inverter bridge circuit 2 through insurance FU1.
220V alternating current is through the rectification of single-phase bridge full-controlled rectifier module, export and carry out filtering for DC pulse moving voltage through 2 parallel connection direct electric capacity, the DC voltage negative feedback module moment gathers output DC voltage, can by the adjustment of external potentiometer Rw Non-follow control realization to inversion system DC bus-bar voltage amplitude.Wherein: circuit breaker Q model is CDB6v63, single-phase bridge full-controlled rectifier module model is DQZ-220D120E, DC capacitor Cd size is 3300 μ F, DC voltage negative feedback module model is MK-ZF/120-500E, potentiometer Rw size is 1 ~ 20k Ω, transformer T1 no-load voltage ratio is 220V ~ 18V, and insurance FU1 maximum current is 40A.
Three-phase inverter bridge circuit 2 comprises three inverter bridge legs, isolation boosting transformer T2, middle contactor KM1, electrothermal relay FR and master switch button SB and forms, and its connected mode is: three inverter bridge legs, middle contactor KM1, isolation boosting transformer T2 are connected successively with electrothermal relay FR; Master switch button SB one end connects 220V feeder ear, and the other end is connected with the normally closed contact of electrothermal relay FR successively with the coil of middle contactor KM1; Each brachium pontis installs lower two IGBT module, three inverter bridge legs, install 6 IGBT module altogether, and in each IGBT module installation place, installed Absorption Capacitance Cx1 ~ Cx6, and each inverter bridge leg all carries overcurrent protection FU.The three-phase of Converting Unit output terminal is respectively U phase, V phase and W phase, and inversion exports three-phase electricity (U phase, V phase and W phase) through middle contactor KM1, then after isolation boosting transformer T2 boosts, is powered to three-phase tunable load 3 by electrothermal relay FR.Like this, step-up transformer coordinates with tunable load, then while reaching and needing IGBT module collector current Ic, realizes output power and minimize.Wherein, in the present embodiment, isolation boosting transformer T2 adopts no-load voltage ratio to be 60V ~ 380V/400V, and middle contactor KM1 adopts model to be CJX2-25, and electrothermal relay FR adopts model to be JR36-20.
Three-phase tunable load 7 comprises the 1st tunable load, the 2nd tunable load and middle contactor KM2, and its connected mode is: middle contactor KM2 is directly connected with the 2nd tunable load, and forms parallel-connection structure with the 1st tunable load, and is three-phase and four-line connection.Wherein, in the 1st tunable load and the 2nd tunable load, each adjustable resistance all adopts high-power adjustable porcelain dish resistance, and resistance is 0 ~ 150 Ω/1500W, and middle contactor KM2 adopts model to be CJX2-25.
Be illustrated in figure 3 temperature acquisition of the present invention and temperature control system schematic diagram, mainly comprise temperature sensor 3, temperature acquisition and storage system 4, relay 5, radiator fan 6, computing machine 9 and middle contactor KM2 to form, its connected mode is: temperature sensor 3, temperature data acquisition and storage system 4 is connected successively with relay 5, temperature data acquisition and storage system 4 are connected with computing machine 9 by USB interface, and radiator fan 6 is connected with relay 5 with middle contactor KM2 simultaneously.Computing machine 9 is general industry computing machine.
Temperature sensor 3 comprises 6 independently temperature sensor probes, for gathering three-phase inverter bridge circuit 2 temperature, and be connected with the temperature acquisition port of temperature data acquisition and storage system 4, temperature data acquisition and storage system 4 gather simultaneously and store 6 groups of temperature datas, wherein power end Vcc, the data I/O end of the first temperature sensor probe and port one .1 ~ 1.3 of ground Gnd end difference corresponding temperature data acquisition and storage system 4, other temperature sensor, by that analogy; Temperature data acquisition and storage system 4 are processed temperature data by built-in single-chip microcomputer, and import the data of collection into computing machine by USB interface, by temperature data stored in computing machine, there are 9 external button KEY1 ~ KEY9, for arranging the corresponding temperature bound of relay 5 action; Temperature data acquisition and storage system 4 also have 5 output control terminal X1 ~ X5 and are connected successively with the power supply negative pole of the relay K 1 ~ K5 in relay 5 respectively, and the power supply positive pole of relay K 1 ~ K5 is connected with+5V power supply.Wherein, relay 5 is made up of 5 respective independently relay K 1 ~ K5, temperature sensor probe model is DS18B20, detected temperatures scope is-55 DEG C ~+125 DEG C (precision ± 0.1 DEG C), temperature data acquisition and storage system 4 well-known device, its model is SZ06-(09-4).
The normally closed contact of relay K 1 is connected with the excess temperature test side of IGBT module gate pole SPWM signal control circuit 8, common ground connection; Relay K 2 coordinates with relay K 3 and controls being switched on or switched off of radiator fan 6, and relay K 2 is connected with+12V power supply with the common of K3, and normally opened contact is all connected with radiator fan 6, radiator fan 6 other end ground connection; Relay K 4 common connects 220V Alternating Current Power Supply, normally opened contact connects the normally closed contact of relay K 5, the common of relay K 5 is connected with middle contactor KM2 coil, and the middle contactor KM2 coil other end connects the other end of 220V Alternating Current Power Supply, relay K 4 coordinate with relay K 5 control in the middle of contactor KM2, and middle contactor KM2 is for controlling access or the disconnection of the 2nd tunable load in three-phase tunable load 7.Wherein, relay K 1 ~ K5 model is SRD-05VDC-SL-C, and radiator fan 6 adopts 220V Alternating Current Power Supply.
Be illustrated in figure 4 IGBT module gate pole SPWM signal control circuit 8 structural representation, form primarily of fpga chip, level shifting circuit, driver, warning circuit, gate pole unistor and mu balanced circuit, its connected mode is: fpga chip, level shifting circuit, driver, gate pole unistor circuit and mu balanced circuit are connected successively, warning circuit is connected with driver, and the excess temperature test side of fpga chip is connected with the normally closed contact of the relay K 1 in relay 5.
Level-conversion circuit is made up of the 6 mutually isostructural circuit in tunnel, 1st tunnel connected mode is: 8 pin of boost chip are powered, voltage is+24V, the input of the SPWM signal that 2 pin export as fpga chip, filter capacitor C7 is connected between 5 pin with 8 pin, and 5 pin ground connection, 6 pin are connected with 7 pin and to be exported as boost chip, the SPWM1 signal that output terminal is finally exported as level-conversion circuit by resistance R2 through parallel connection+15V voltage stabilizing diode.The like, other 5 tunnel connected mode is identical with the 1st tunnel connected mode.Level-conversion circuit mainly adopts boost chip to coordinate with+15V stabilivolt DZ1, and the 3.3V high level exported by fpga chip through level-conversion circuit is converted to the input of 15V high level as driver.
The 6 road SPWM signals through level-conversion circuit are divided into 3 groups (SPWM1 and SPWM4, SPWM3 and SPWM6, SPWM5 and SPWM2), the 2 road signals often organized are respectively as the input signal of V-TOP and the V-BOT pin of a driver, driver output signal is connected with gate pole unistor circuit, and each driver is all connected to respective warning circuit by pin error.Through driver, the 2 road SPWM signals of same group are converted to high level+15V and low level-8V, and mutually isolated signal, substantially increase the driving force of signal simultaneously.
Gate pole unistor and mu balanced circuit are made up of the 6 mutually isostructural circuit in tunnel, 1st tunnel connected mode is: driver exports SWPM1 signal and connected open resistance Ron respectively by two parallel connections, reverse diode and closed resistance break Roff, as IGBT module gate electrode resistance; 15V voltage stabilizing diode DZ2 and reverse 8V voltage stabilizing diode DZ3 is in parallel with unistor circuit output end after connecting, and is connected to IGBT gate pole, simultaneously contact resistance R3 between IGBT gate pole is with emitter.The like, other 5 tunnel connected mode is identical with the 1st tunnel connected mode.
Warning circuit is corresponding with driver, three drivers corresponding 3 duplicate warning circuits in road respectively, and wherein 1 tunnel connected mode is :+15V power supply is held with resistance R5, R6 and driver error and is connected successively; Resistance R4 is connected between+15V power supply and driver error hold; The base stage of triode V1 is connected between resistance R5 and R6 by resistance R8, and emitter is held with driver error and is connected, and collector is by connecting luminous diode, resistance R7 are connected with+15V power supply with hummer H successively.Warning circuit gathers the pressure drop on same brachium pontis in 2 IGBT module opening processes between collector and emitter respectively by the port x 2.5 of driver and X2.1 and X3.5 and X3.1, when the collection emitter voltage drop of arbitrary IGBT gives tacit consent to normal pressure drop higher than driver, the error end of driver becomes low level from high level, < 6mA is answered, so be connected current-limiting resistance R4 between feeder ear is held with error because driver pours into electric current.
Wherein fpga chip model is Altera EP1C3T144C8N chip, boost chip model is TLP250, DZ1 and DZ2 model is IN5352, DZ3 model be IN5344, C7 is ceramic disc capacitor 0.1 μ F, D1 and D2 model is IN4007, D3 is light emitting diode, and V1 is NPN type triode model D882, drive model PSHI2012, H is hummer, resistance R1 is 100 Ω, R2 be 10K Ω, R3 is 3.3K Ω, R4 is 10K Ω, R5 is 20K Ω, R6 be 1K Ω, R7 is 10K Ω, Ron is 3.3 Ω, Roff is 6 Ω.
Be illustrated in figure 5 the SPWM signal generating structure figure based on FPGA, mainly comprise external signal detecting portion, system frequency controls and detecting portion, DDS control sine wave and triangular wave phase accumulator, three-phase sine-wave phase controller, three-phase sine-wave and triangular wave question blank, data comparator and Power MOSFET part composition, its principle of work is: the importation that system frequency controls and detecting portion detects as external signal, receive outside SPWM frequency variation signal and excess temperature detection signal, frequency division exports the process for controlling whole program; DDS controls sinusoidal wave and triangular wave phase accumulator, three-phase sine-wave phase controller and three-phase sine-wave and triangular wave question blank composition DDS controls basic framework, is 50Hz and phase differential is the triangular wave of the frequency of 120 ° of three-phase sine-waves and the demand of test for output frequency; Sinewave modulation signal and triangular wave carrier compare and export rect.p. as SPWM signal by data comparator; Two parts are comprised in Power MOSFET module, bipolar SPWM signal decomposition is complementary two-way SPWM signal by the first, second is exactly for preventing two IGBT conducting simultaneously that same half-bridge is driven by 2 road SPWM signals, when 2 road SPWM signal switching, reserved Dead Time, so just obtains the 6 road SPWM signals driving IGBT module.(mainly by hard-wired, temperature controls to use single-chip microcomputer control system of the present invention, and the SPWM signal of inversion is controlled by fpga chip, and computing machine is used for storing temperature data.)
The operation method of three-phase inversion system IGBT module power temperature control of the present invention and pick-up unit, comprises the following steps (as shown in Figure 6):
(1) three-phase inverter bridge circuit 2 has three inverter bridge legs, the position of pipe up and down of each brachium pontis installs an IGBT module respectively, each IGBT module copper base installs a heat radiator, the heat-conducting silicone grease of about 100 ~ 200 μm of one deck is evenly coated with between heat radiator and module copper base, heat radiator leaves a through hole immediately below the inner igbt chip of IGBT module, and temperature sensor probe via through holes carries out thermometric to IGBT module copper base.Wherein, heat radiator adopts 6063 aluminum alloy materials, and temperature conductivity is 209W/m. DEG C (25 DEG C); Heat-conducting silicone grease adopts SHIN-ETSU HANTOTAI G747, and temperature conductivity is 1.09W/m. DEG C.
(2) device for opening, connects the middle contactor KM1 in three-phase inverter bridge circuit, and check that whether the display of each instrument is normal, device carries out initialization, arranges, be respectively test parameters:
1. adjust initial DC busbar voltage: closed main circuit switch, checking whether each instrument shows normally, adjusting the external potentiometer (0 ~ 20k Ω) for controlling thyristor rectifier bridge, ask that test needs magnitude of voltage by DC bus-bar voltage adjustment;
2. adjust and initially access load value: initial load adopts the adjustable porcelain disc resistor of high power three-phase (the 1st load), the IGBT module collector current value that can set as required, regulating load within the scope of 0 ~ 80 Ω;
3. IGBT module gate-drive SPWM signal frequency is set, SPWM signal frequency is changed by the external frequency detecting input end of fpga chip KEY+ and KEY-, highest frequency is set to 30KHz, low-limit frequency is set to 500Hz, often by a KEY+ frequency rising 500Hz, press KEY-frequency decrease 500Hz;
4. the operating temperature upper and lower bound value of Single-chip Controlling relay is set, controls access and the disconnection of IGBT module radiator fan and the 2nd load:
A., the excess temperature critical temperature upper limit is set, prevent IGBT module inside chip overheated and lost efficacy, be that relay 1 action exports high level when IGBT module copper base temperature reaches critical temperature H1, fpga chip detects that high level inputs, SPWM signal is stopped to export, and overtemperature alarm;
B. by arranging ceiling temperature H2 and the lower limit temperature L2 of pilot relay 2, IGBT module copper base is maintained the fluctuation of predetermined temperature interval, when IGBT module copper base temperature reaches ceiling temperature H2, relay closes, opens radiator fan and dispels the heat, when detecting that temperature is down to L2 to IGBT module copper base, relay 2 disconnects, stop heat radiation, fan wind speed can also be regulated by pressure regulation, and then control cooling rate;
C. temperature value H3 corresponding time by arranging pilot relay 3 action, IGBT module copper base temperature is maintained predetermined temperature value, when IGBT module copper base temperature reaches H3, relay 3 accesses fan, when temperature is down to below H3, relay 3 disconnects fan, ensures that copper base temperature fluctuates about a certain temperature value.
D., when the change of needs fictitious load affects IGBT module power-temperature, needing is cooperatively interacted by relay 4 and relay 5 changes the size of access the 2nd load, when detection IGBT module copper base temperature is L4, and relay 4 action access load; When detected temperatures is H5, relay 5 action, disconnecting consumers; The change of load, changes and flows through IGBT module collector current, reaches the object changing modular power.
(3) the auxiliary reclay that is connected with load of open temp acquisition system, closed inversion system, device starts to enter duty;
(4) device is in operational process, fpga chip constantly detects (this device detects 8 time with regard to p.s. to SPWM signal frequency button at operation fpga chip) SPWM signal frequency button, when detecting that key-press input changes, correspondence is changed fpga chip and export SPWM signal frequency, under continuous duty can be realized, change SPWM signal frequency.
(5) device is in operational process, temperature sensor DS18B20 constantly detects IGBT module copper base temperature, when its reach temperature critical value is set time, the corresponding actuating of relay, and then control the access of radiator fan or the access of disconnection and the second load or disconnection.
(6) device is in operational process, and fpga chip and drive plate PSHI2012 constantly detect IGBT module and whether whole device work is normal, and when generation IGBT module excess temperature, short circuit, load overcurrent, when inversion system exports disconnected equal fault, system automatically shuts down.
(7), after (4) ~ (6) detecting step reaches test stable state above system, by preset port, the electric parameter of IGBT module is detected and stores.
(8) one take turns after test completes, press X button, system stalls.
(9) if desired proceed test, repeat (1) above-mentioned ~ (7) process, otherwise carry out next step;
(10) the test figure that collects of aftertreatment, subsequent treatment is carried out to the important electric parameter of the IGBT module collected, utilize collector current and collection emitter voltage data, instantaneous power and the average power of IGBT module can be calculated, analyze stable state collection emitter voltage variation tendency etc., and then the electric property of research IGBT module and degradation trend etc.
(11) terminate test.
Experimental data processing:
By Matlab software, test the data obtained is processed, analyze IGBT electric parameter and its copper base temperature relation, shown in following Fig. 7 and Fig. 8, wherein Fig. 7 is when not using radiator fan and collection emitter voltage 60V and collector current 20A is constant, the graph of a relation of research IGBT switching frequency and its copper base temperature, switching frequency is respectively 500Hz, 2kHz, 5kHz, 10kHz; Fig. 8 is that the graph of a relation of research IGBT collector current and its copper base temperature, collector current is respectively 5A, 10A, 20A, 30A when not using radiator fan and collection emitter voltage 60V and switching frequency 10kHz is constant.
Fig. 9 keeps 60V constant for collection emitter voltage, changes load simulation actual condition, and coordinate limit temperature in certain temperature range with radiator fan by preset value.
Fig. 7 exports SPWM signal frequency by design fpga chip, IGBT copper base temperature under different switching frequency is contrasted, along with the escalating rate of the rising IGBT copper base temperature of switching frequency and stationary value are all in rising, the switching frequency of visible IGBT on the impact of its copper base temperature obviously, reflects along with the rising switching loss of switching frequency is also in rising.Along with the use of IGBT module is degenerated, IGBT module switching frequency and copper base temperature relation can be studied by this device, and then research IGBT degree of degeneration and switching frequency and copper base temperature relation, for future IGBT module On-line Reliability Estimation and provide the turnaround plan of science to provide research platform.
Fig. 8 is by arranging DC bus-bar voltage and three-phase adjustable load value, control the collector current of IGBT module, the increase along with collector current can be found out, IGBT module copper base temperature rises gradually, and escalating rate increases obviously, this device can by research in IGBT module gradually degenerative process, under different collector current, the change procedure of IGBT module copper base temperature, and the change of copper base temperature under same set electrode current, and then research is in the relation of IGBT module degeneration copper base temperature and collector current gradually.
Temperature value corresponding when Fig. 9 is by controlling the opening or turning off of radiator fan, and control three-phase tunable load, realize controlling IGBT module copper base range of temperature, for research is under identical electric condition, the impact of change on electric parameter and IGBT module operating characteristic of temperature provides platform.
Unaccomplished matter of the present invention is known technology.
Claims (6)
1. a three-phase inversion system IGBT module power temperature controls and pick-up unit, the composition that it is characterized by this device comprises: rectifying and pressure-regulating filtering circuit, three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system, relay, radiator fan, three-phase tunable load, IGBT module gate pole SPWM signal control circuit and computing machine, its annexation is: the input end of three-phase inverter bridge circuit connects rectifying and pressure-regulating filtering circuit, three-phase inverter bridge circuit output terminal connects three-phase tunable load, gate pole SPWM signal control circuit output terminal connects the gate pole of IGBT module in three-phase inverter bridge circuit, temperature sensor, temperature acquisition storage system and relay connect successively, and relay connects radiator fan and three-phase tunable load respectively, and temperature sensor is connected with three-phase inverter bridge circuit respectively with radiator fan, temperature data acquisition and storage system are connected with computing machine,
Described regulator rectifier circuit is made up of circuit breaker Q, single-phase bridge full-controlled rectifier module, DC capacitor Cd, DC voltage negative feedback module, potentiometer Rw, transformer T1 and insurance FU1; Its connected mode is: circuit breaker Q connects input AC 220V main line; The feeder ear of single-phase bridge full-controlled rectifier module, the feeder ear of DC voltage negative feedback module, to be connected with input main line respectively with the high-pressure side of transformer T1; Transformer T1 low pressure end is connected with single-phase bridge full-controlled rectifier module low pressure input end; The voltage controling end of DC voltage negative feedback module connects potentiometer Rw, and pressure feedback port connects single-phase bridge full-controlled rectifier module DC output end, and con end is held with single-phase bridge full-controlled rectifier module con and is connected; DC output end 2 DC capacitor Cd in parallel of single-phase bridge full-controlled rectifier module, are connected with three-phase inverter bridge circuit through insurance FU1;
Described three-phase inverter bridge circuit comprises three inverter bridge legs, isolation boosting transformer T2, middle contactor KM1, electrothermal relay FR and master switch button SB and forms, and its connected mode is: three inverter bridge legs, middle contactor KM1, isolation boosting transformer T2 are connected successively with electrothermal relay FR; Master switch button SB one end connects 220V feeder ear, and the other end is connected with the normally closed contact of electrothermal relay FR successively with the coil of middle contactor KM1; Each brachium pontis installs lower two IGBT module, three inverter bridge legs, install 6 IGBT module altogether, and in each IGBT module installation place, installed Absorption Capacitance Cx1 ~ Cx6, and each inverter bridge leg all carries overcurrent protection FU;
Described three-phase tunable load comprises the 1st tunable load, the 2nd tunable load and middle contactor KM2, its connected mode is: middle contactor KM2 is directly connected with the 2nd tunable load, and form parallel-connection structure with the 1st tunable load, and be three-phase and four-line connection.
2. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and pick-up unit, it is characterized by described temperature sensor and comprises 6 independently temperature sensor probes.
3. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and pick-up unit, it is characterized by described relay and is made up of 5 respective independently relay K 1 ~ K5.
4. three-phase inversion system IGBT module power temperature as claimed in claim 1 controls and pick-up unit, the composition that it is characterized by described IGBT module gate pole SPWM signal control circuit comprises fpga chip, level shifting circuit, driver, warning circuit, gate pole unistor and mu balanced circuit, its connected mode is: fpga chip, level shifting circuit, driver, gate pole unistor circuit and mu balanced circuit are connected successively, warning circuit is connected with driver, and the excess temperature test side of fpga chip is connected with the normally closed contact of the relay K 1 in relay.
5. the operation method of three-phase inversion system IGBT module power temperature control as claimed in claim 1 and pick-up unit, is characterized by and comprise the following steps:
(1) the position of pipe up and down of each brachium pontis of three-phase inverter bridge circuit installs an IGBT module respectively;
(2) device for opening, connects the middle contactor KM1 in three-phase inverter bridge circuit, and check that whether the display of each instrument is normal, device carries out initialization, arranges, be respectively test parameters:
1. adjust initial DC busbar voltage: closed main circuit switch, checking whether each instrument shows normally, adjusting the external potentiometer (0 ~ 20k Ω) for controlling thyristor rectifier bridge, ask that test needs magnitude of voltage by DC bus-bar voltage adjustment;
2. adjust and initially access load value: initial load adopts the adjustable porcelain disc resistor of high power three-phase (the 1st load), the IGBT module collector current value set as required, regulating load within the scope of 0 ~ 80 Ω;
3. IGBT module gate-drive SPWM signal frequency is set, SPWM signal frequency is changed by the external frequency detecting input end of fpga chip KEY+ and KEY-, highest frequency is set to 30KHz, low-limit frequency is set to 500Hz, often by a KEY+ frequency rising 500Hz, press KEY-frequency decrease 500Hz;
4. the operating temperature upper and lower bound value of Single-chip Controlling relay is set, controls access and the disconnection of IGBT module radiator fan and the 2nd load:
A. arrange the excess temperature critical temperature upper limit, be that relay 1 action exports high level when IGBT module copper soleplate temperature reaches critical temperature H1, fpga chip detects that high level inputs, and stops SPWM signal to export, and overtemperature alarm;
B. by arranging ceiling temperature H2 and the lower limit temperature L2 of pilot relay 2, IGBT module copper soleplate is maintained the interval fluctuation of experiment predetermined temperature, when IGBT module copper soleplate temperature reaches ceiling temperature H2, relay closes, opens radiator fan and dispels the heat, when detecting that temperature is down to L2 to IGBT module copper soleplate, relay 2 disconnects, stop heat radiation, regulate fan wind speed by pressure regulation, and then control cooling rate;
C. temperature value H3 corresponding time by arranging pilot relay 3 action, IGBT module copper soleplate temperature is maintained experiment predetermined temperature, and when IGBT module copper soleplate temperature reaches H3, relay 3 accesses fan, when temperature is down to below H3, relay 3 disconnects fan;
D., when the change of needs fictitious load affects IGBT module power-temperature, needing is cooperatively interacted by relay 4 and relay 5 changes the size of access the 2nd load, when detection IGBT module copper soleplate temperature is L4, and relay 4 action access load; When detected temperatures is H5, relay 5 action, disconnecting consumers;
(3) the auxiliary reclay that is connected with load of open temp acquisition system, closed inversion system, device starts to enter duty;
(4) device is in operational process, detects SPWM signal frequency button, when detecting that key-press input changes, correspondence being changed fpga chip and exporting SPWM signal frequency;
(5) device is in operational process, detects IGBT module copper soleplate temperature, when its reach temperature critical value is set time, the corresponding actuating of relay, and then control the access of radiator fan or the access of disconnection and the second load or disconnection.
(6) device is in operational process, whether normally detects its work, when generation IGBT module excess temperature, short circuit, and load overcurrent, when inversion system exports disconnected equal fault, system automatically shuts down;
System through above (4) ~ (6) detecting step reach test stable state after, by preset port, the electric parameter of IGBT module is detected and stores;
(8) one take turns after test completes, press X button, system stalls.
(9) if desired proceed test, repeat (1) above-mentioned ~ (7) process, otherwise carry out next step;
(10) the test figure that collects of aftertreatment, subsequent treatment is carried out to the important electric parameter of the IGBT module collected, utilize collector current and collection emitter voltage data, instantaneous power and the average power of IGBT module can be calculated, analyze stable state collection emitter voltage variation tendency etc., and then the electric property of research IGBT module and degradation trend etc.;
(11) terminate test.
6. the operation method of three-phase inversion system IGBT module power temperature control as claimed in claim 5 and pick-up unit, it is characterized by the method for installing IGBT module respectively of each brachium pontis on described three-phase inverter bridge circuit, comprise the following steps: each IGBT module copper soleplate installs a heat radiator, the heat-conducting silicone grease of about 2 μm of one deck is evenly coated with between heat radiator and module copper soleplate, heat radiator leaves a through hole immediately below the inner igbt chip of IGBT module, and temperature sensor probe via through holes carries out thermometric to IGBT module copper soleplate.
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