CN104355611B - Ultralow dielectric microwave dielectric ceramic InAlZn5o8and preparation method thereof - Google Patents
Ultralow dielectric microwave dielectric ceramic InAlZn5o8and preparation method thereof Download PDFInfo
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- CN104355611B CN104355611B CN201410601073.6A CN201410601073A CN104355611B CN 104355611 B CN104355611 B CN 104355611B CN 201410601073 A CN201410601073 A CN 201410601073A CN 104355611 B CN104355611 B CN 104355611B
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Abstract
The invention discloses a kind of temperature-stable ultralow dielectric microwave dielectric ceramic InAlZn5O8And preparation method thereof.(1) be 99.9%(percentage by weight by purity) more than In2O3、Al2O3InAlZn is pressed with the starting powder of ZnO5O8Composition weigh dispensing；(2) by step (1) raw material wet ball-milling mix 12 hours, ball-milling medium is distilled water, after drying in 1200 DEG C of air atmosphere pre-burning 6 hours；(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally sinter 4 hours in 1250 ~ 1300 DEG C of air atmosphere；Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for the 3% of powder gross mass.Ceramic post sintering prepared by the present invention is good, and dielectric constant reaches 7.1～7.7, and its quality factor q f value is up to 145000 191000GHz, and temperature coefficient of resonance frequency is little, industrially has great using value.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to for manufacturing ceramic substrate, the resonance that microwave frequency uses
Dielectric ceramic materials of microwave device such as device and wave filter and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material
And complete the pottery of one or more functions, modern communication is widely used as resonator, wave filter, dielectric substrate and medium
The components and parts such as wave circuit, are the key foundation materials of modern communication technology, in portable mobile phone, automobile telephone, nothing
The aspect such as rope phone, television satellite accepter and military radar has highly important application, small-sized at modern communication instrument
Change, integrated during just playing increasing effect.
It is applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric property: (1) seriation DIELECTRIC CONSTANT εr
To adapt to different frequency and the requirement of different application occasion;(2) high quality factor q value or low dielectric loss tan δ are to reduce
Noise, typically requires Qf >=3000 GHz;(3) the temperature coefficient τ of resonant frequencyƒThe least to ensure what device had had
Heat stability, general requirement-10 ppm/DEG C≤τƒ≤+10 ppm/℃.Just have tried to from late 1930s in the world
Dielectric substance is applied to microwave technology, and prepares TiO2Microwave dielectric filter, but its temperature coefficient of resonance frequency τƒ
Too greatly cannot be practical.Since the seventies in last century, the large-scale development to medium ceramic material, root are started
According to relative dielectric constant εrSize from use frequency range different, generally can will have been developed that and developing microwave-medium pottery
Porcelain is divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al2O3-TiO2、Y2BaCuO5、MgAl2O4With
Mg2SiO4Deng, its εr≤ 20, quality factor q × f >=50000GHz, τƒ≤10 ppm/°C.It is mainly used in microwave base plate and height
End microwave device.
(2) low εrWith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta2O5, BaO-ZnO-Ta2O5Or BaO-
MgO-Nb2O5,BaO-ZnO-Nb2O5System or the hybrid system MWDC material between them.Its εr=20～35, Q=(1～2) ×
104(under the GHz of f >=10), τƒ≈0.As medium in the microwave communication equipments such as the direct broadcasting satellite being mainly used in f >=8 GHz
Resonating device.
(3) medium εrWith the microwave dielectric ceramic of Q-value, it is mainly with BaTi4O9、Ba2Ti9O20(Zr, Sn) TiO4Etc. for
The MWDC material of base, its εr=35 ~ 45, Q=(6～9) × 103(under f=3～-4GHz), τƒ≤5 ppm/°C.It is mainly used in 4
～8 in microwave military radar in GHz frequency range and communication system as dielectric resonance device.
(4) high εrAnd the microwave dielectric ceramic that Q-value is relatively low, in being mainly used in 0.8～4GHz frequency range, civilian movement is led to
News system, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, Kolar, Kato et al. in succession find and have studied
Perovskite-like tungsten bronze type BaO Ln2O3—TiO2Series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), composite perofskite
Structure C aO Li2O—Ln2O3—TiO2Series, lead base series material, Ca1-xLn2x/3TiO3It is contour εrMicrowave dielectric ceramic,
The wherein BaO Nd of BLT system2O3—TiO2Material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO3Dielectric constant reaches
To 105.
The sintering temperature of the above material system is generally greater than 1300 ° of C, it is impossible to directly golden with the low melting point such as Ag and Cu
Belong to burning altogether and form multilayer ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired
Ceramics, LTCC) development and microwave multilayer device development requirement, research worker both domestic and external is to some low grade fever's systems
Material has carried out exploring widely and studying, and mainly uses devitrified glass or glassceramic composites system, because of low melting point
Glass has of a relatively high dielectric loss mutually, and the existence of glass phase substantially increases the dielectric loss of material.Therefore nothing is developed
The low fired microwave dielectric ceramic material of glass phase is the emphasis of current research.
Three performance indications (ε due to microwave dielectric ceramicrWith Q f and τƒBetween) be mutually restriction relation (see
Document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component
With material, phase March the 3rd in 2005), the single-phase microwave-medium ceramics meeting three performance requirements is considerably less, is mainly theirs
Temperature coefficient of resonance frequency is the most excessive or quality factor are on the low side and cannot application request.At present to microwave-medium ceramics
Research major part be the summary of experience drawn by great many of experiments, but there is no complete theory to illustrate microstructure and Jie
The relation of electrical property, therefore, the most also cannot predict its temperature coefficient of resonance frequency from the composition of compound with structure
With the microwave dielectric properties such as quality factor, explore and develop near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τƒ≤+10
Ppm/ DEG C) it is that those skilled in the art thirst for always with the microwave dielectric ceramic of the serial differing dielectric constant of higher figure of merit
Solve but be difficult to the difficult problem succeeded all the time, which greatly limits the development of microwave dielectric ceramic and device.
Summary of the invention
It is an object of the invention to provide one and there is good thermal stability and low-loss ultralow dielectric micro-wave dielectric
Ceramic material and preparation method thereof.
The chemical composition of the microwave dielectric ceramic material of the present invention is InAlZn5O8。
The preparation method step of this microwave dielectric ceramic material is:
(1) be 99.9%(percentage by weight by purity) more than In2O3、Al2O3InAlZn is pressed with the starting powder of ZnO5O8
Composition weigh dispensing.
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is distilled water, big at 1200 DEG C after drying
Pre-burning 6 hours in gas atmosphere.
(3), after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding, finally 1250 ~ 1300
DEG C air atmosphere sinters 4 hours；Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and polyvinyl alcohol adds
Amount accounts for the 3% of powder gross mass.
Advantages of the present invention: InAlZn5O8Ceramic dielectric constant reaches 7.1～7.7, the temperature coefficient τ of its resonant frequencyƒ
Little, temperature stability is good；Quality factor q f value is up to 145000-191000GHz, can be widely used for various dielectric resonator and filter
The manufacture of the microwave devices such as ripple device, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have
Using value greatly.
Detailed description of the invention
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof of the different sintering temperatures constituting the present invention.Its system
Preparation Method as it has been described above, carry out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used for the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet shifting
The technology of the systems such as dynamic communication and satellite communication needs.
Table 1:
Claims (1)
1. a temperature-stable ultralow dielectric microwave dielectric ceramic, it is characterised in that the chemistry of described microwave dielectric ceramic
Consist of: InAlZn5O8；
The preparation method of described microwave dielectric ceramic concretely comprises the following steps:
(1) be 99.9%(percentage by weight by purity) more than In2O3、Al2O3InAlZn is pressed with the starting powder of ZnO5O8Group
Become to weigh dispensing；
(2) being mixed 12 hours by step (1) raw material wet ball-milling, ball-milling medium is distilled water, at 1200 DEG C of air gas after drying
Pre-burning 6 hours in atmosphere；
(3) after adding binding agent pelletize in the powder that step (2) prepares, re-compacted molding is finally big at 1250 ~ 1300 DEG C
Gas atmosphere sinters 4 hours；Described binding agent uses mass concentration to be the poly-vinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for
The 3% of powder gross mass.
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| CN103553612B (en) * | 2013-11-11 | 2015-05-20 | 桂林理工大学 | Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof |
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