CN103553612B - Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof - Google Patents

Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof Download PDF

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CN103553612B
CN103553612B CN201310555918.8A CN201310555918A CN103553612B CN 103553612 B CN103553612 B CN 103553612B CN 201310555918 A CN201310555918 A CN 201310555918A CN 103553612 B CN103553612 B CN 103553612B
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low temperature
ba6w2v2o17
dielectric ceramic
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CN103553612A (en
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方亮
苏和平
郭欢欢
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Suzhou Hongwu Technology Intermediary Service Co.,Ltd.
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Guilin University of Technology
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Abstract

The invention discloses microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at a low temperature and a preparation method thereof. The microwave dielectric ceramic capable of being sintered at the low temperature has the composition of Ba6W2V2O17. The preparation method comprises the following steps: (1) weighing and batching original powder of BaCO3, WO3 and V2O5 with the purity of over 99.9 percent according to the chemical formula of the Ba6W2V2O17; (2) mixing the raw materials of the step (1) and performing wet milling for 12 hours, wherein the solvent is distilled water; pre-sintering for 6 hours in air atmosphere at 830 DEG C after the mixture is dried; (3) adding an adhesive into the prepared powder, granulating, pressing, forming, and sintering for 4 hours in the air atmosphere at 920 DEG C, wherein the adhesive adopts a polyvinyl alcohol solution with the mass concentration of 5 percent, and the dosage of the polyvinyl alcohol solution accounts for 3 percent of the total mass of the powder. The ceramic prepared by the invention is sintered well between 890 and 920 DEG C, has the dielectric constant between 25 and 26, the Qf (quality factor) value between 88,000 and 94,000 GHz, and low temperature coefficient of resonance frequency, can be co-fired with an Ag electrode, and has a great application value in industry.

Description

Low temperature sintering microwave dielectric ceramic Ba 6w 2v 2o 17and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and the filter used in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF, SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telstar recipient and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric property should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ to reduce noise, General Requirements Qf>=3000 GHz; (3) the temperature coefficient τ of resonance frequency ?little of as far as possible to ensure the thermal stability that device has had, General Requirements-10/ DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative dielectric constant ε rsize from use frequency range different, usually the microwave dielectric ceramic be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the hybrid system MWDC material between them.Its ε r=25 ~ 30, Q=(1 ~ 2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 40, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz frequency ranges and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz frequency range, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3dielectric constant reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low-melting-point metal such as Ag and Cu burn formation multilayer ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researcher both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low-melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low temperature sintering microwave dielectric ceramic of glassy phase.We are to consisting of Ba 6w 2v 2o 17, Ba 6w 2nb 2o 17, Sr 6w 2nb 2o 17and Sr 6w 2v 2o 17pottery has carried out sintering characteristic and Study on microwave dielectric property, found that above ceramic sintering temperature is lower than 950 °c, but only Ba 6w 2v 2o 17there is excellent comprehensive microwave dielectric property, the manufacture of the microwave devices such as various resonator and filter can be widely used in, the needs of low temperature co-fired technology and microwave multilayer device can be met.
Summary of the invention
The object of this invention is to provide and a kind ofly have low-loss and good thermal stability, sintering temperature is low, microwave dielectric ceramic that can be low temperature co-fired with Ag and preparation method thereof.
The chemical composition of the low temperature sintering microwave dielectric ceramic that the present invention relates to is: Ba 6w 2v 2o 17.
Preparation method's concrete steps of described low temperature sintering microwave dielectric ceramic are:
(1) be the BaCO of more than 99.9% by purity 3, WO 3and V 2o 5starting powder press Ba 6w 2v 2o 17chemical formula weigh batching.
(2) by step (1) raw material mixing wet ball-milling 12 hours, solvent is distilled water, pre-burning 6 hours in 830 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 890 ~ 920 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and dosage accounts for 3% of powder gross mass.
Pottery prepared by the present invention is good at 890 ~ 920 DEG C of sintering, and its dielectric constant reaches 25 ~ 26, and quality factor q f value is up to 88000-94000GHz, and temperature coefficient of resonance frequency is little, can be low temperature co-fired with Ag electrode, industrially has great using value.
Embodiment
Embodiment:
Table 1 shows 4 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.By Ba 6w 2v 2o 17powder mixes with the Ag powder accounting for powder quality 20%, compressing after, at 920 DEG C sinter 4 hours; X x ray diffraction material phase analysis and scanning electron microscopic observation all show Ba 6w 2v 2o 17chemical reaction is not there is not, i.e. Ba with Ag 6w 2v 2o 17can be low temperature co-fired with Ag electrode.
The present invention is never limited to above embodiment.Bound, the interval value of sintering temperature can realize the present invention, do not enumerate embodiment at this.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and filter, can meet the technology needs of the system such as mobile communication, satellite communication.
Table 1:

Claims (1)

1. composite oxides are as can the application of low-temperature sintered microwave dielectric ceramic, it is characterized in that the chemical constitution formula of described composite oxides is: Ba 6w 2v 2o 17;
Preparation method's concrete steps of described composite oxides are:
(1) be the BaCO of more than 99.9% by purity 3, WO 3and V 2o 5starting powder press Ba 6w 2v 2o 17chemical formula weigh batching;
(2) by step (1) raw material mixing wet ball-milling 12 hours, solvent is distilled water, pre-burning 6 hours in 830 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, more compressing, finally in 890 ~ 920 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the poly-vinyl alcohol solution of 5%, and dosage accounts for 3% of powder gross mass.
CN201310555918.8A 2013-11-11 2013-11-11 Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof Active CN103553612B (en)

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CN104261832B (en) * 2014-09-19 2016-01-13 桂林理工大学 Low temperature sintering ultralow dielectric microwave-medium ceramics BaY 4v 2o 12
CN104261830B (en) * 2014-09-25 2015-12-30 桂林理工大学 Temperature-stable ultralow dielectric microwave dielectric ceramic BaBi 2w 6o 22
CN104355611B (en) * 2014-11-01 2016-09-28 桂林理工大学 Ultralow dielectric microwave dielectric ceramic InAlZn5o8and preparation method thereof
CN104649667A (en) * 2015-02-09 2015-05-27 桂林理工大学 Temperature-stable ultralow-dielectric-constant microwave dielectric ceramic LiZn3WVO9
CN104649671A (en) * 2015-02-25 2015-05-27 桂林理工大学 Low-loss temperature stable type low dielectric constant microwave dielectric ceramic LiZn2Nb7O20

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Publication number Priority date Publication date Assignee Title
CN101289312A (en) * 2008-06-13 2008-10-22 清华大学 Low sintering temperature and low loss microwave ceramic medium and preparation process thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101289312A (en) * 2008-06-13 2008-10-22 清华大学 Low sintering temperature and low loss microwave ceramic medium and preparation process thereof

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