CN104348341B - 用于开关功率阶段的防振铃技术 - Google Patents
用于开关功率阶段的防振铃技术 Download PDFInfo
- Publication number
- CN104348341B CN104348341B CN201410375495.6A CN201410375495A CN104348341B CN 104348341 B CN104348341 B CN 104348341B CN 201410375495 A CN201410375495 A CN 201410375495A CN 104348341 B CN104348341 B CN 104348341B
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- China
- Prior art keywords
- switch
- voltage
- control signal
- circuit
- stage
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/04206—Modifications for accelerating switching by feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
Landscapes
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/958,141 US9444444B2 (en) | 2013-08-02 | 2013-08-02 | Anti-ringing technique for switching power stage |
US13/958,141 | 2013-08-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104348341A CN104348341A (zh) | 2015-02-11 |
CN104348341B true CN104348341B (zh) | 2017-10-27 |
Family
ID=52427107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410375495.6A Active CN104348341B (zh) | 2013-08-02 | 2014-08-01 | 用于开关功率阶段的防振铃技术 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9444444B2 (zh) |
CN (1) | CN104348341B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105024531B (zh) * | 2015-07-28 | 2017-12-01 | 英特格灵芯片(天津)有限公司 | 一种dv/dt检测与保护装置及方法 |
US10530353B2 (en) | 2015-10-21 | 2020-01-07 | Microchip Technology Incorporated | Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults |
JP6963556B2 (ja) | 2015-10-21 | 2021-11-10 | マイクロチップ テクノロジー インコーポレイテッドMicrochip Technology Incorporated | 非飽和又は短絡障害を制御するためのSiC及びIGBTパワーデバイス用のゲート駆動制御システム |
US10135430B2 (en) * | 2016-01-19 | 2018-11-20 | Texas Instruments Incorporated | Adjusting drive strength for driving transistor device |
KR101794998B1 (ko) * | 2016-07-27 | 2017-11-08 | 현대오트론 주식회사 | 절연 게이트 드라이버 및 그를 포함하는 전력 소자 구동 시스템 |
GB201620104D0 (en) * | 2016-11-28 | 2017-01-11 | Powerventure Semiconductor Ltd | A system and method of driving a switch circuit |
JP2018182927A (ja) | 2017-04-14 | 2018-11-15 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその制御方法 |
CN108736863B (zh) * | 2017-04-20 | 2022-02-25 | 上海和辉光电有限公司 | 一种输出驱动电路 |
US10187053B1 (en) * | 2017-07-24 | 2019-01-22 | Semiconductor Components Industries, Llc | Drive circuit for power semiconductor devices |
US10075076B1 (en) * | 2017-12-12 | 2018-09-11 | Texas Instruments Incorporated | Voltage converter with current steering |
US10224817B1 (en) * | 2018-07-19 | 2019-03-05 | Navitas Semiconductor, Inc. | Power transistor control signal gating |
JP6418350B1 (ja) * | 2018-07-25 | 2018-11-07 | 富士電機株式会社 | 駆動装置およびスイッチング装置 |
CN112994447B (zh) * | 2019-12-13 | 2022-03-04 | 立锜科技股份有限公司 | 低延迟时间的电源转换电路及其中的驱动电路 |
JP2022117063A (ja) | 2021-01-29 | 2022-08-10 | マツダ株式会社 | 負荷駆動制御装置 |
US20230043119A1 (en) * | 2021-08-06 | 2023-02-09 | Richtek Technology Corporation | Low emi driver apparatus |
CN118054652A (zh) * | 2024-04-15 | 2024-05-17 | 苏州纳芯微电子股份有限公司 | 驱动控制电路、驱动控制方法及驱动控制*** |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535283B2 (en) * | 2005-02-16 | 2009-05-19 | Kabushiki Kaisha Toshiba | Gate drive circuit, semiconductor module and method for driving switching element |
CN102208864A (zh) * | 2010-03-30 | 2011-10-05 | 松下电器产业株式会社 | 开关设备驱动装置和半导体装置 |
CN102545555A (zh) * | 2010-11-22 | 2012-07-04 | 株式会社电装 | 具有恒定电流可变结构的负载驱动器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5481178A (en) | 1993-03-23 | 1996-01-02 | Linear Technology Corporation | Control circuit and method for maintaining high efficiency over broad current ranges in a switching regulator circuit |
US5550458A (en) | 1994-05-31 | 1996-08-27 | Lucent Technologies Inc. | Low-loss snubber for a power factor corrected boost converter |
US6664829B1 (en) * | 2002-09-04 | 2003-12-16 | National Semiconductor Corporation | Charge pump using dynamic charge balance compensation circuit and method of operation |
JP4502177B2 (ja) * | 2003-10-14 | 2010-07-14 | ルネサスエレクトロニクス株式会社 | 出力回路 |
KR100753123B1 (ko) * | 2005-09-29 | 2007-08-29 | 주식회사 하이닉스반도체 | 출력 드라이빙 장치 |
TW200735510A (en) * | 2006-01-27 | 2007-09-16 | Rohm Co Ltd | Charge pump circuit and electric appliance therewith |
TWI337008B (en) | 2007-03-26 | 2011-02-01 | Richtek Technology Corp | Anti-ringing switching regulator and control method therefor |
TW200906038A (en) | 2007-07-26 | 2009-02-01 | Richtek Technology Corp | Non-synchronous step-up voltage converter with anti-oscillation function and the anti-oscillation method thereof |
US8188769B2 (en) | 2008-05-09 | 2012-05-29 | Analog Devices, Inc. | Method and apparatus for propagation delay and EMI control |
-
2013
- 2013-08-02 US US13/958,141 patent/US9444444B2/en active Active
-
2014
- 2014-08-01 CN CN201410375495.6A patent/CN104348341B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535283B2 (en) * | 2005-02-16 | 2009-05-19 | Kabushiki Kaisha Toshiba | Gate drive circuit, semiconductor module and method for driving switching element |
CN102208864A (zh) * | 2010-03-30 | 2011-10-05 | 松下电器产业株式会社 | 开关设备驱动装置和半导体装置 |
CN102545555A (zh) * | 2010-11-22 | 2012-07-04 | 株式会社电装 | 具有恒定电流可变结构的负载驱动器 |
Also Published As
Publication number | Publication date |
---|---|
US9444444B2 (en) | 2016-09-13 |
CN104348341A (zh) | 2015-02-11 |
US20150035584A1 (en) | 2015-02-05 |
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Effective date of registration: 20210630 Address after: Limerick Patentee after: ANALOG DEVICES INTERNATIONAL UNLIMITED Co. Address before: Limerick Patentee before: Analog Devices Global Unlimited Co. |