CN104346305A - Method and system for supporting low-impedance SIM card by common SIM card controller - Google Patents
Method and system for supporting low-impedance SIM card by common SIM card controller Download PDFInfo
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- CN104346305A CN104346305A CN201310345356.4A CN201310345356A CN104346305A CN 104346305 A CN104346305 A CN 104346305A CN 201310345356 A CN201310345356 A CN 201310345356A CN 104346305 A CN104346305 A CN 104346305A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/0772—Physical layout of the record carrier
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/0008—General problems related to the reading of electronic memory record carriers, independent of its reading method, e.g. power transfer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The invention provides a method and system for supporting a low-impedance SIM card by a common SIM card controller. The method comprises the following steps: comparing an SIM-DATA signal with a preset reference level by a signal rising edge detection unit; when the SIM-DATA signal is higher than the preset reference level, outputting a low or high level by the signal rising edge detection unit and triggering an upward pull signal generation unit to drive to output a high level so as to pull the SIM-DATA signal to the high level by an upward pull circuit unit. According to the invention, the low-impedance SIM card can be supported by using the common SIM card controller; the system provided by the invention is only needed to be added to the SIM-DATA signal without changing the original common SIM card circuit; when the terminal does not need the low-impedance SIM card supporting function, the system is not adhered, so that the cost is reduced; therefore, the volume production reuse strategy, namely the public board strategy for sharing one PCB board by a plurality of machines is facilitated; the circuit is simple, the cost is low, the power consumption is small, and the popularization is facilitated.
Description
Technical field
The present invention relates to SIM card, particularly the method and system of Low ESR SIM card supported by a kind of common SIM cards controller.
Background technology
In the prior art, common SIM cards controller only supports common SIM cards.As shown in Figure 1, it is the circuit theory diagrams of common SIM cards.
In FIG, D1 ~ D4 is release electrostatic device (ESD device), and in order to prevent SIM circuit by electrostatic breakdown, and SIM circuit is powered by VSIM.
Further, R1 is pull-up resistor, and according to the requirement of SIM card uniformity test electrical specification, R1 must be greater than more than 3K.According to SIM specification, during Guardtime, common SIM cards controller no longer drives SIM_DATA signal, and by R1 for SIM_DATA signal provides pull-up, that is, if last bit of SIM_DATA Signal transmissions is low, then R1 is responsible for SIM_DATA signal to draw high to high level.
Further, the Guardtime rise time of common SIM cards code requirement SIM_DATA is less than 1000ns.But, because the stray capacitance on SIM_DATA signal in mobile phone is very large, wherein said stray capacitance comprises: ESD device electric capacity, PCB(printed circuit board (PCB)) walk line capacitance, and sim card connector, SIM card and SIM card controller pin capacitance, under normal circumstances, if last bit of SIM_DATA Signal transmissions is low, the i.e. upper low level of IO, stray capacitance then on SIM_DATA signal can readily exceed 40pF, thus causes the Guardtime rise time of SIM_DATA more than 100ns.
Because the Guardtime rise time of Low ESR SIM card code requirement SIM_DATA is less than 100ns, and the requirement of SIM card uniformity test electrical specification, when IO being low level, pour into electric current by R1 and be less than 1mA, therefore directly can not reduce pull-up resistor on IO to reduce the Guardtime rise time of SIM_DATA, therefore common SIM cards traditional circuit cannot the test of safety Low ESR SIM card.
Summary of the invention
A kind of common SIM cards controller is the object of the present invention is to provide to support the method and system of Low ESR SIM card, to solve the problem that Low ESR SIM card do not supported by existing common SIM cards controller.
For solving the problems of the technologies described above, the invention provides the system that Low ESR SIM card supported by a kind of common SIM cards controller, comprising:
Signal rising edge detecting unit;
Pull-up signal generation unit, is communicated with described signal rising edge detecting unit;
Pull-up circuit unit, is communicated with described pull-up signal generation unit.
Further, support in the system of Low ESR SIM card at described common SIM cards controller,
Described signal rising edge detecting unit comprises: comparer and VCC power supply fast, and wherein, described quick comparer is by described VCC Power supply; The anode of described quick comparer inputs a datum preset, negative electrode input SIM_DATA signal;
Described pull-up signal generation unit comprises: oppositely not gate and VSIM power supply, and wherein, described reverse not gate is by described VSIM Power supply;
Described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
Further, support in the system of Low ESR SIM card at described common SIM cards controller,
Described signal rising edge detecting unit comprises: comparer and VCC power supply fast, and wherein, described quick comparer is by described VCC Power supply; The negative electrode of described quick comparer inputs a datum preset, anode input SIM_DATA signal;
Described pull-up signal generation unit comprises: buffered-display driver door and VSIM power supply, and wherein, described buffered-display driver door is by described VSIM Power supply;
Described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
Further, support in the system of Low ESR SIM card at described common SIM cards controller,
Described signal rising edge detecting unit comprises: the 3rd resistance and the first high speed NPN triode, wherein, and described 3rd resistance and described first high speed NPN triode ON;
Described pull-up signal generation unit comprises: the 4th resistance and the second high speed NPN triode, wherein, and described 4th resistance and described second high speed NPN triode ON;
Described pull-up circuit unit comprises: the second resistance.
Further, support in the system of Low ESR SIM card at described common SIM cards controller,
Described signal rising edge detecting unit comprises: the 3rd resistance, the first high speed NPN triode and the 4th resistance, wherein, described 3rd resistance, the 4th resistance respectively with described first high speed NPN triode ON;
Described pull-up signal generation unit comprises: high speed P channel MOS tube;
Described pull-up circuit unit comprises: the second resistance.
Meanwhile, the present invention also provides a kind of common SIM cards controller to support the system of Low ESR SIM card, comprising:
Ultralow pressure level conversion unit, the input stage of described ultralow pressure level conversion unit is by VCC Power supply, and output stage is by VSIM Power supply;
Pull-up circuit unit, is communicated with described ultralow pressure level conversion unit.
Further, support that at described common SIM cards controller in the system of Low ESR SIM card, described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
Meanwhile, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Signal rising edge detecting unit compares SIM_DATA signal and a datum preset;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit exports low or high level, trigger pull-up signal generation unit driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, support that at described common SIM cards controller in the method for Low ESR SIM card, described signal rising edge detecting unit comprises: comparer and VCC power supply fast; Described pull-up signal generation unit comprises: oppositely not gate and VSIM power supply; Described pull-up circuit unit comprises: schottky diode and the second resistance;
The step that signal rising edge detecting unit compares SIM_DATA signal and a datum preset comprises: comparer compares SIM_DATA signal and a datum preset fast;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, quick comparer output low level, trigger reverse not gate and export high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, support that at described common SIM cards controller in the method for Low ESR SIM card, described signal rising edge detecting unit comprises: comparer and VCC power supply fast; Described pull-up signal generation unit comprises: buffered-display driver door and VSIM power supply; Described pull-up circuit unit comprises: schottky diode and the second resistance;
The step that signal rising edge detecting unit compares SIM_DATA signal and a datum preset comprises: comparer compares SIM_DATA signal and default datum fast;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit exports high level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, quick comparer exports high level, trigger buffered-display driver and export high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, support that at described common SIM cards controller in the method for Low ESR SIM card, described signal rising edge detecting unit comprises: the 3rd resistance and the first high speed NPN triode; Described pull-up signal generation unit comprises: the 4th resistance and the second high speed NPN triode; Described pull-up circuit unit comprises: the second resistance;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode, and triggering and conducting second high speed NPN triode driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, support that at described common SIM cards controller in the method for Low ESR SIM card, described signal rising edge detecting unit comprises: the 3rd resistance, high speed NPN triode and the 4th resistance; Described pull-up signal generation unit comprises: high speed P channel MOS tube; Described pull-up circuit unit comprises: the second resistance;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode, and triggering and conducting high speed P channel MOS tube driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Meanwhile, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Ultralow pressure level conversion unit compares SIM_DATA signal and a datum preset;
When described SIM_DATA signal is higher than the datum preset, ultralow pressure level conversion unit exports high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
The method and system of Low ESR SIM card supported by a kind of common SIM cards controller provided by the invention, has following beneficial effect: the present invention uses common SIM cards controller just can support Low ESR SIM card.Only need increase system of the present invention on SIM_DATA signal, do not change original common SIM cards circuit, when terminal does not need to support Low ESR SIM card function, can not present system be mounted thus reduce costs, therefore the volume production multiplex strategy that different types of machines share a kind of pcb board is conducive to, i.e. work plate strategy.Circuit of the present invention is simple, and cost is low, and power consumption is little, is easy to promote.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of existing common SIM cards;
Fig. 2 is the structural representation of the system of the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 1;
Fig. 3 is the circuit design drawing of the system and method for the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 1;
Fig. 4 is the circuit design drawing of the system and method for the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 1;
Fig. 5 is the circuit design drawing of the system and method for the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 2;
Fig. 6 is the structural representation of the system of the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 3;
Fig. 7 is the circuit design drawing of the system and method for the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 3;
Fig. 8 is the circuit design drawing of the system and method for the common SIM cards controller support Low ESR SIM card of the embodiment of the present invention 4.
Embodiment
Below in conjunction with the drawings and specific embodiments, the common SIM cards controller that the present invention proposes is supported that the method and system of Low ESR SIM card is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
[embodiment 1]
As shown in Figure 2, when driving SIM_DATA self in SIM_DATA signal saltus step process from low to high, the present embodiment makes the SIM_DATA rise time greatly shorten, and the invention provides the system that Low ESR SIM card supported by a kind of common SIM cards controller, comprising:
Signal rising edge detecting unit 21;
Pull-up signal generation unit 22, is communicated with described signal rising edge detecting unit 21;
Pull-up circuit unit 23, is communicated with described pull-up signal generation unit 22.
Meanwhile, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Step one: signal rising edge detecting unit compares SIM_DATA signal and a datum preset;
Step 2: when described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit exports low or high level, trigger pull-up signal generation unit driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, as shown in Figure 3, it is the circuit design drawing of embodiment 1.
Concrete, described signal rising edge detecting unit comprises: comparer 31 and VCC power supply fast, and wherein, described quick comparer 31 is by described VCC Power supply; The anode of described quick comparer 31 inputs a datum preset, and described datum is a lower voltage, as 0.3V, and negative electrode input SIM_DATA signal;
Described pull-up signal generation unit comprises: oppositely not gate 32 and VSIM power supply, and wherein, described reverse not gate 32, by described VSIM Power supply, therefore can support the SIM card of 1.8V and 3V simultaneously;
Described pull-up circuit unit comprises: schottky diode D5 and the second resistance R2, and wherein, described schottky diode D5 is connected in series with described second resistance R2.In the present embodiment, described schottky diode D5 electric conduction forces down, and is generally 0.3V, the resistance that described second resistance R2 selects resistance less, as 1Kohm.
Be noted that if datum voltage is lower especially, and the second resistance R2 is when comparatively resistance R1 resistance gap is not too large, described schottky diode D5 can omit, but this can increase circuit power consumption.
Further, as shown in Figure 4, if the anode of quick comparer 31, negative electrode input signal are exchanged, and described reverse not gate 32 changes impact damper into, also can realize identical function, also belongs within scope.
Further, SIM_DATA signal shortening rise time method is as follows:
Step one: comparer 31 compares SIM_DATA signal and default datum fast;
Step 2: when described SIM_DATA signal is higher than the datum preset, quick comparer 31 exports low or high level, trigger reverse not gate 32 and export high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Concrete, according to Low ESR SIM specification, the SIM_DATA time of signal between Gardtime rising edge in period (0.3*VSIM ~ 0.7*VSIM) is required to be less than 100ns, this time is approximately time constant R*C, and (R is SIM_DATA pull-up resistor, i.e. the second resistance R2, C is all electric capacity sums on SIM_DATA), generally, C is about 40 ~ 60pF, when the second resistance R2 is 1Kohm, rise time R*C can be calculated in theory and be less than 100ns, so just reach the requirement of Low ESR SIM card electrical specification.
[embodiment 2]
In example 2, the invention provides the system that Low ESR SIM card supported by a kind of common SIM cards controller, comprising:
Signal rising edge detecting unit;
Pull-up signal generation unit, is communicated with described signal rising edge detecting unit;
Pull-up circuit unit, is communicated with described pull-up signal generation unit.
Meanwhile, in example 2, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Step one: signal rising edge detecting unit compares SIM_DATA signal and a datum preset;
Step 2: when described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, as shown in Figure 5, it is the circuit design drawing of embodiment 2.
Concrete, described signal rising edge detecting unit comprises: the 3rd resistance R3 and the first high speed NPN triode B1, wherein, and described 3rd resistance R3 and described first high speed NPN triode B1 conducting, described first high speed NPN triode B1 ground connection;
In the present embodiment, described 3rd resistance R3 selects larger resistance, as 47Kohm;
Described pull-up signal generation unit comprises: the 4th resistance R4 and the second high speed NPN triode B2, wherein, and described 4th resistance R4 and described second high speed NPN triode B2 conducting;
In the present embodiment, described 4th resistance R4 selects larger resistance, as 10Kohm;
Described pull-up circuit unit comprises: the second resistance R2.
In the present embodiment, described second resistance R2 selects less resistance, as 1Kohm.
Further, SIM_DATA signal shortening rise time method is as follows:
When described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode B1, and triggering and conducting second high speed NPN triode B2 driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Concrete, in the present embodiment, described reference level selection 0.7V, when SIM_DATA signal is higher than 0.7V, described first high speed NPN triode B1 conducting, triggering and conducting second high speed NPN triode B2 driver output high level simultaneously, when described second high speed NPN triode B2 exports high level, SIM_DATA signal is drawn high to high level rapidly by pull-up circuit unit.
[embodiment 3]
In embodiment 3, signal rising edge detecting unit and pull-up signal generation unit can be realized in the lump by a ultralow pressure level conversion unit, also can realize identical function of the present invention.
As shown in Figure 6, the invention provides the system that Low ESR SIM card supported by a kind of common SIM cards controller, comprising:
Ultralow pressure level conversion unit 51, the input stage of described ultralow pressure level conversion unit 51 is by VCC Power supply, and output stage is by VSIM Power supply;
Pull-up circuit unit 52, is communicated with described ultralow pressure level conversion unit 51.
Concrete, described pull-up circuit unit comprises: schottky diode D5 and the second resistance R2, and wherein, described schottky diode D5 is connected in series with described second resistance R2.In the present embodiment, described schottky diode D5 electric conduction forces down, and is generally 0.3V, the resistance that described second resistance R2 selects resistance less, as 1Kohm.
Meanwhile, as shown in Figure 7, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Step one: ultralow pressure level conversion unit compares SIM_DATA signal and a datum preset;
Step 2: when described SIM_DATA signal is higher than the datum preset, ultralow pressure level conversion unit exports high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Concrete, in the present embodiment, ultralow pressure level conversion unit minimumly can accept 0.9V voltage, and high level judges that thresholding is 0.9V*0.65=0.585V, therefore, when VCC voltage is 0.9V, when SIM_DATA voltage is higher than 0.585V, ultralow pressure level transferring chip driver output is high.When ultralow pressure level transferring chip driver output height, SIM_DATA signal is drawn high to level rapidly by pull-up circuit unit.
[embodiment 4]
In example 4, the invention provides the system that Low ESR SIM card supported by a kind of common SIM cards controller, comprising:
Signal rising edge detecting unit;
Pull-up signal generation unit, is communicated with described signal rising edge detecting unit;
Pull-up circuit unit, is communicated with described pull-up signal generation unit.
Meanwhile, in example 4, the present invention also provides a kind of common SIM cards controller to support the method for Low ESR SIM card, use described common SIM cards controller support Low ESR SIM card system, comprising:
Step one: signal rising edge detecting unit compares SIM_DATA signal and a datum preset;
Step 2: when described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Further, as shown in Figure 8, it is the circuit design drawing of embodiment 4.
Concrete, described signal rising edge detecting unit comprises: the 3rd resistance R3, the first high speed NPN triode B1 and the 4th resistance R4, wherein, described 3rd resistance R3, the 4th resistance R4 respectively with described first high speed NPN triode B1 conducting, described first high speed NPN triode B1 ground connection;
In the present embodiment, described 3rd resistance R3 selects larger resistance, as 47Kohm; Described 4th resistance R4 also selects larger resistance, as 10Kohm;
Described pull-up signal generation unit comprises: high speed P channel MOS tube M1, and described high speed P channel MOS tube M1 is by VSIM Power supply;
Described pull-up circuit unit comprises: the second resistance R2.
In the present embodiment, described second resistance R2 selects less resistance, as 1Kohm.
Further, SIM_DATA signal shortening rise time method is as follows:
When described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode B1, and triggering and conducting high speed P channel MOS tube M1 driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
Concrete, in the present embodiment, described reference level selection 0.7V, when SIM_DATA signal is higher than 0.7V, described first high speed NPN triode B1 conducting, trigger high speed P channel MOS tube M1 driver output high level, when described high speed P channel MOS tube M1 exports high level, SIM_DATA signal is drawn high to high level rapidly by pull-up circuit unit simultaneously.
The combination of comprehensive said structure, the present invention uses common SIM cards controller just can support Low ESR SIM card.Only need increase system of the present invention on SIM_DATA signal, do not change original common SIM cards circuit, when terminal does not need to support Low ESR SIM card function, can not present system be mounted thus reduce costs, therefore the volume production multiplex strategy that different types of machines share a kind of pcb board is conducive to, i.e. work plate strategy.Circuit of the present invention is simple, and cost is low, and power consumption is little, is easy to promote.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (13)
1. a system for Low ESR SIM card supported by common SIM cards controller, it is characterized in that, comprising:
Signal rising edge detecting unit;
Pull-up signal generation unit, is communicated with described signal rising edge detecting unit;
Pull-up circuit unit, is communicated with described pull-up signal generation unit.
2. the system of Low ESR SIM card supported by common SIM cards controller as claimed in claim 1, it is characterized in that,
Described signal rising edge detecting unit comprises: comparer and VCC power supply fast, and wherein, described quick comparer is by described VCC Power supply; The anode of described quick comparer inputs a datum preset, negative electrode input SIM_DATA signal;
Described pull-up signal generation unit comprises: oppositely not gate and VSIM power supply, and wherein, described reverse not gate is by described VSIM Power supply;
Described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
3. the system of Low ESR SIM card supported by common SIM cards controller as claimed in claim 1, it is characterized in that,
Described signal rising edge detecting unit comprises: comparer and VCC power supply fast, and wherein, described quick comparer is by described VCC Power supply; The negative electrode of described quick comparer inputs a datum preset, anode input SIM_DATA signal;
Described pull-up signal generation unit comprises: buffered-display driver door and VSIM power supply, and wherein, described buffered-display driver door is by described VSIM Power supply;
Described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
4. the system of Low ESR SIM card supported by common SIM cards controller as claimed in claim 1, it is characterized in that,
Described signal rising edge detecting unit comprises: the 3rd resistance and the first high speed NPN triode, wherein, and described 3rd resistance and described first high speed NPN triode ON;
Described pull-up signal generation unit comprises: the 4th resistance and the second high speed NPN triode, wherein, and described 4th resistance and described second high speed NPN triode ON;
Described pull-up circuit unit comprises: the second resistance.
5. the system of Low ESR SIM card supported by common SIM cards controller as claimed in claim 1, it is characterized in that,
Described signal rising edge detecting unit comprises: the 3rd resistance, the first high speed NPN triode and the 4th resistance, wherein, described 3rd resistance, the 4th resistance respectively with described first high speed NPN triode ON;
Described pull-up signal generation unit comprises: high speed P channel MOS tube;
Described pull-up circuit unit comprises: the second resistance.
6. a system for Low ESR SIM card supported by common SIM cards controller, it is characterized in that, comprising:
Ultralow pressure level conversion unit, the input stage of described ultralow pressure level conversion unit is by VCC Power supply, and output stage is by VSIM Power supply;
Pull-up circuit unit, is communicated with described ultralow pressure level conversion unit.
7. the system of Low ESR SIM card supported by common SIM cards controller as claimed in claim 6, and it is characterized in that, described pull-up circuit unit comprises: schottky diode and the second resistance, and wherein, described schottky diode is connected in series with described second resistance.
8. a method for Low ESR SIM card supported by common SIM cards controller, use common SIM cards controller as claimed in claim 1 support Low ESR SIM card system, it is characterized in that, comprising:
Signal rising edge detecting unit compares SIM_DATA signal and a datum preset;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit exports low or high level, trigger pull-up signal generation unit driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
9. the method for Low ESR SIM card supported by common SIM cards controller as claimed in claim 8, and it is characterized in that, described signal rising edge detecting unit comprises: comparer and VCC power supply fast; Described pull-up signal generation unit comprises: oppositely not gate and VSIM power supply; Described pull-up circuit unit comprises: schottky diode and the second resistance;
The step that signal rising edge detecting unit compares SIM_DATA signal and a datum preset comprises: comparer compares SIM_DATA signal and a datum preset fast;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, quick comparer output low level, trigger reverse not gate and export high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
10. the method for Low ESR SIM card supported by common SIM cards controller as claimed in claim 8, and it is characterized in that, described signal rising edge detecting unit comprises: comparer and VCC power supply fast; Described pull-up signal generation unit comprises: buffered-display driver door and VSIM power supply; Described pull-up circuit unit comprises: schottky diode and the second resistance;
The step that signal rising edge detecting unit compares SIM_DATA signal and a datum preset comprises: comparer compares SIM_DATA signal and default datum fast;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit exports high level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, quick comparer exports high level, trigger buffered-display driver and export high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
The method of Low ESR SIM card supported by 11. common SIM cards controllers as claimed in claim 8, and it is characterized in that, described signal rising edge detecting unit comprises: the 3rd resistance and the first high speed NPN triode; Described pull-up signal generation unit comprises: the 4th resistance and the second high speed NPN triode; Described pull-up circuit unit comprises: the second resistance;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode, and triggering and conducting second high speed NPN triode driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
The method of Low ESR SIM card supported by 12. common SIM cards controllers as claimed in claim 8, and it is characterized in that, described signal rising edge detecting unit comprises: the 3rd resistance, high speed NPN triode and the 4th resistance; Described pull-up signal generation unit comprises: high speed P channel MOS tube; Described pull-up circuit unit comprises: the second resistance;
When described SIM_DATA signal is higher than the datum preset, signal rising edge detecting unit output low level, trigger pull-up signal generation unit driver output high level, thus the step that SIM_DATA signal is drawn high to high level by pull-up circuit unit comprises: when described SIM_DATA signal is higher than the datum preset, conducting first high speed NPN triode, and triggering and conducting high speed P channel MOS tube driver output high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
The method of Low ESR SIM card supported by 13. 1 kinds of common SIM cards controllers, use common SIM cards controller as claimed in claim 6 support Low ESR SIM card system, it is characterized in that, comprising:
Ultralow pressure level conversion unit compares SIM_DATA signal and a datum preset;
When described SIM_DATA signal is higher than the datum preset, ultralow pressure level conversion unit exports high level, thus SIM_DATA signal is drawn high to high level by pull-up circuit unit.
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| CN201310345356.4A CN104346305B (en) | 2013-08-08 | 2013-08-08 | Common SIM cards controller supports the method and system of Low ESR SIM |
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| CN201310345356.4A CN104346305B (en) | 2013-08-08 | 2013-08-08 | Common SIM cards controller supports the method and system of Low ESR SIM |
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| CN104346305B CN104346305B (en) | 2017-06-16 |
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| CN104346305B (en) | 2017-06-16 |
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Application publication date: 20150211 Assignee: Shanghai Li Ke Semiconductor Technology Co., Ltd. Assignor: Leadcore Technology Co., Ltd. Contract record no.: 2018990000159 Denomination of invention: Method and system for supporting low-impedance SIM card by common SIM card controller Granted publication date: 20170616 License type: Common License Record date: 20180615 |
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