CN104339751B - 铜条、带镀敷的铜条以及引线框 - Google Patents

铜条、带镀敷的铜条以及引线框 Download PDF

Info

Publication number: CN104339751B
Authority: CN; China
Prior art keywords: plating layer; copper bar; aufwuchsplate; substrate plating; substrate
Prior art date: 2013-08-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201410274659.6A

Other languages

English (en)

Chinese (zh)

Other versions

CN104339751A (zh

Inventor

小平宗男

古德浩

古德浩一

山本佳纪

青柳幸司

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Metals Neomaterial Ltd

Original Assignee

SH Copper Products Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-08-05

Filing date

2014-06-19

Publication date

2018-09-28

2014-06-19 Application filed by SH Copper Products Co Ltd filed Critical SH Copper Products Co Ltd

2015-02-11 Publication of CN104339751A publication Critical patent/CN104339751A/zh

2018-09-28 Application granted granted Critical

2018-09-28 Publication of CN104339751B publication Critical patent/CN104339751B/zh

Status Active legal-status Critical Current

2034-06-19 Anticipated expiration legal-status Critical

Links

238000007747 plating Methods 0.000 title claims abstract description 369
239000010949 copper Substances 0.000 title claims abstract description 193
229910052802 copper Inorganic materials 0.000 title claims abstract description 170
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 169
239000000758 substrate Substances 0.000 claims abstract description 196
239000013078 crystal Substances 0.000 claims abstract description 33
238000000034 method Methods 0.000 claims description 63
238000005259 measurement Methods 0.000 claims description 12
238000001887 electron backscatter diffraction Methods 0.000 claims description 4
238000002310 reflectometry Methods 0.000 abstract description 42
239000000523 sample Substances 0.000 description 75
230000000052 comparative effect Effects 0.000 description 36
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
238000005096 rolling process Methods 0.000 description 31
229910000881 Cu alloy Inorganic materials 0.000 description 25
239000000463 material Substances 0.000 description 23
238000012545 processing Methods 0.000 description 16
238000005554 pickling Methods 0.000 description 15
238000005097 cold rolling Methods 0.000 description 12
238000005498 polishing Methods 0.000 description 12
238000000137 annealing Methods 0.000 description 11
238000004519 manufacturing process Methods 0.000 description 11
230000003287 optical effect Effects 0.000 description 11
239000007864 aqueous solution Substances 0.000 description 10
230000015572 biosynthetic process Effects 0.000 description 10
238000005098 hot rolling Methods 0.000 description 10
229910052759 nickel Inorganic materials 0.000 description 9
238000011156 evaluation Methods 0.000 description 8
239000007788 liquid Substances 0.000 description 8
239000011248 coating agent Substances 0.000 description 7
238000000576 coating method Methods 0.000 description 7
238000005238 degreasing Methods 0.000 description 7
238000001878 scanning electron micrograph Methods 0.000 description 7
-1 FCC metals Chemical class 0.000 description 6
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
238000004458 analytical method Methods 0.000 description 6
238000002425 crystallisation Methods 0.000 description 6
230000008025 crystallization Effects 0.000 description 6
239000000155 melt Substances 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 6
239000002184 metal Substances 0.000 description 6
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
238000000227 grinding Methods 0.000 description 5
238000010438 heat treatment Methods 0.000 description 5
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
238000009826 distribution Methods 0.000 description 4
238000005516 engineering process Methods 0.000 description 4
238000001579 optical reflectometry Methods 0.000 description 4
229910052698 phosphorus Inorganic materials 0.000 description 4
229910052709 silver Inorganic materials 0.000 description 4
239000004332 silver Substances 0.000 description 4
239000000126 substance Substances 0.000 description 4
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
238000005266 casting Methods 0.000 description 3
238000003486 chemical etching Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000010894 electron beam technology Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000000203 mixture Substances 0.000 description 3
230000003647 oxidation Effects 0.000 description 3
238000007254 oxidation reaction Methods 0.000 description 3
239000011574 phosphorus Substances 0.000 description 3
USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
235000019394 potassium persulphate Nutrition 0.000 description 3
238000002203 pretreatment Methods 0.000 description 3
239000000243 solution Substances 0.000 description 3
JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
229910017824 Cu—Fe—P Inorganic materials 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
238000003556 assay Methods 0.000 description 2
VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
230000001419 dependent effect Effects 0.000 description 2
230000006866 deterioration Effects 0.000 description 2
238000005530 etching Methods 0.000 description 2
238000003384 imaging method Methods 0.000 description 2
238000000386 microscopy Methods 0.000 description 2
239000007800 oxidant agent Substances 0.000 description 2
230000001590 oxidative effect Effects 0.000 description 2
BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
229910000029 sodium carbonate Inorganic materials 0.000 description 2
VDMJCVUEUHKGOY-JXMROGBWSA-N (1e)-4-fluoro-n-hydroxybenzenecarboximidoyl chloride Chemical compound O\N=C(\Cl)C1=CC=C(F)C=C1 VDMJCVUEUHKGOY-JXMROGBWSA-N 0.000 description 1
229910017985 Cu—Zr Inorganic materials 0.000 description 1
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
230000002159 abnormal effect Effects 0.000 description 1
239000002253 acid Substances 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
230000032683 aging Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000003796 beauty Effects 0.000 description 1
KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
239000004327 boric acid Substances 0.000 description 1
229910017052 cobalt Inorganic materials 0.000 description 1
239000010941 cobalt Substances 0.000 description 1
GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
230000001186 cumulative effect Effects 0.000 description 1
238000005520 cutting process Methods 0.000 description 1
229910052805 deuterium Inorganic materials 0.000 description 1
UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 description 1
230000004069 differentiation Effects 0.000 description 1
238000007598 dipping method Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
230000005611 electricity Effects 0.000 description 1
238000004070 electrodeposition Methods 0.000 description 1
239000003344 environmental pollutant Substances 0.000 description 1
238000000605 extraction Methods 0.000 description 1
239000000835 fiber Substances 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
238000007689 inspection Methods 0.000 description 1
238000011835 investigation Methods 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
239000013081 microcrystal Substances 0.000 description 1
210000003205 muscle Anatomy 0.000 description 1
LAIZPRYFQUWUBN-UHFFFAOYSA-L nickel chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ni+2] LAIZPRYFQUWUBN-UHFFFAOYSA-L 0.000 description 1
RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052763 palladium Inorganic materials 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
231100000719 pollutant Toxicity 0.000 description 1
229910052700 potassium Inorganic materials 0.000 description 1
239000011591 potassium Substances 0.000 description 1
229910000027 potassium carbonate Inorganic materials 0.000 description 1
NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
238000001556 precipitation Methods 0.000 description 1
229940098221 silver cyanide Drugs 0.000 description 1
LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
238000009751 slip forming Methods 0.000 description 1
210000001519 tissue Anatomy 0.000 description 1
238000012546 transfer Methods 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1
239000011701 zinc Substances 0.000 description 1
229910052726 zirconium Inorganic materials 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/416—Reflective
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/702—Amorphous
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Computer Hardware Design (AREA)
General Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Ceramic Engineering (AREA)
Electroplating Methods And Accessories (AREA)
Lead Frames For Integrated Circuits (AREA)
Led Device Packages (AREA)

CN201410274659.6A 2013-08-05 2014-06-19 铜条、带镀敷的铜条以及引线框 Active CN104339751B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2013162309A JP6085536B2 (ja)	2013-08-05	2013-08-05	銅条、めっき付銅条、リードフレーム及びｌｅｄモジュール
JP2013-162309		2013-08-05

Publications (2)

Publication Number	Publication Date
CN104339751A CN104339751A (zh)	2015-02-11
CN104339751B true CN104339751B (zh)	2018-09-28

Family

ID=52496590

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201410274659.6A Active CN104339751B (zh)	2013-08-05	2014-06-19	铜条、带镀敷的铜条以及引线框

Country Status (4)

Country	Link
JP (1)	JP6085536B2 (ja)
KR (1)	KR20150016885A (ja)
CN (1)	CN104339751B (ja)
TW (1)	TWI647345B (ja)

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JP6450639B2 (ja) *	2015-04-27	2019-01-09	Ｄｏｗａメタルテック株式会社	銀めっき材およびその製造方法
JP7011142B2 (ja) *	2016-09-30	2022-01-26	日亜化学工業株式会社	発光装置、発光装置用パッケージ及び発光装置の製造方法
JP6877210B2 (ja) *	2017-03-30	2021-05-26	株式会社Ｋａｎｚａｃｃ	銀メッキ銅系基材およびその製造方法
JP7231720B2 (ja) *	2019-04-22	2023-03-01	Ｎｇｋエレクトロデバイス株式会社	パッケージおよびパッケージ用の金属枠体
JP7401877B2 (ja) *	2021-02-18	2023-12-20	沢井製薬株式会社	打錠臼
WO2023189419A1 (ja) *	2022-03-30	2023-10-05	古河電気工業株式会社	電気接点材料、ならびにこれを用いた接点、端子およびコネクタ
CN117222782A (zh) *	2022-03-30	2023-12-12	古河电气工业株式会社	电接点材料以及使用其的接点、端子及连接器
WO2023189417A1 (ja) *	2022-03-30	2023-10-05	古河電気工業株式会社	電気接点材料、ならびにこれを用いた接点、端子およびコネクタ

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2013
- 2013-08-05 JP JP2013162309A patent/JP6085536B2/ja active Active
2014
- 2014-06-10 KR KR1020140069818A patent/KR20150016885A/ko not_active Application Discontinuation
- 2014-06-19 CN CN201410274659.6A patent/CN104339751B/zh active Active
- 2014-06-25 TW TW103121959A patent/TWI647345B/zh active

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