CN104339751B - 铜条、带镀敷的铜条以及引线框 - Google Patents
铜条、带镀敷的铜条以及引线框 Download PDFInfo
- Publication number
- CN104339751B CN104339751B CN201410274659.6A CN201410274659A CN104339751B CN 104339751 B CN104339751 B CN 104339751B CN 201410274659 A CN201410274659 A CN 201410274659A CN 104339751 B CN104339751 B CN 104339751B
- Authority
- CN
- China
- Prior art keywords
- plating layer
- copper bar
- aufwuchsplate
- substrate plating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000007747 plating Methods 0.000 title claims abstract description 369
- 239000010949 copper Substances 0.000 title claims abstract description 193
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 170
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 239000000758 substrate Substances 0.000 claims abstract description 196
- 239000013078 crystal Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 63
- 238000005259 measurement Methods 0.000 claims description 12
- 238000001887 electron backscatter diffraction Methods 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 42
- 239000000523 sample Substances 0.000 description 75
- 230000000052 comparative effect Effects 0.000 description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 238000005096 rolling process Methods 0.000 description 31
- 229910000881 Cu alloy Inorganic materials 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 238000012545 processing Methods 0.000 description 16
- 238000005554 pickling Methods 0.000 description 15
- 238000005097 cold rolling Methods 0.000 description 12
- 238000005498 polishing Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000005098 hot rolling Methods 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005238 degreasing Methods 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- -1 FCC metals Chemical class 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001579 optical reflectometry Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 3
- 235000019394 potassium persulphate Nutrition 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910017824 Cu—Fe—P Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- VQLYBLABXAHUDN-UHFFFAOYSA-N bis(4-fluorophenyl)-methyl-(1,2,4-triazol-1-ylmethyl)silane;methyl n-(1h-benzimidazol-2-yl)carbamate Chemical compound C1=CC=C2NC(NC(=O)OC)=NC2=C1.C=1C=C(F)C=CC=1[Si](C=1C=CC(F)=CC=1)(C)CN1C=NC=N1 VQLYBLABXAHUDN-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- VDMJCVUEUHKGOY-JXMROGBWSA-N (1e)-4-fluoro-n-hydroxybenzenecarboximidoyl chloride Chemical compound O\N=C(\Cl)C1=CC=C(F)C=C1 VDMJCVUEUHKGOY-JXMROGBWSA-N 0.000 description 1
- 229910017985 Cu—Zr Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- LAIZPRYFQUWUBN-UHFFFAOYSA-L nickel chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ni+2] LAIZPRYFQUWUBN-UHFFFAOYSA-L 0.000 description 1
- RRIWRJBSCGCBID-UHFFFAOYSA-L nickel sulfate hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-]S([O-])(=O)=O RRIWRJBSCGCBID-UHFFFAOYSA-L 0.000 description 1
- 229940116202 nickel sulfate hexahydrate Drugs 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/416—Reflective
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/702—Amorphous
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013162309A JP6085536B2 (ja) | 2013-08-05 | 2013-08-05 | 銅条、めっき付銅条、リードフレーム及びledモジュール |
JP2013-162309 | 2013-08-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104339751A CN104339751A (zh) | 2015-02-11 |
CN104339751B true CN104339751B (zh) | 2018-09-28 |
Family
ID=52496590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410274659.6A Active CN104339751B (zh) | 2013-08-05 | 2014-06-19 | 铜条、带镀敷的铜条以及引线框 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6085536B2 (ja) |
KR (1) | KR20150016885A (ja) |
CN (1) | CN104339751B (ja) |
TW (1) | TWI647345B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6450639B2 (ja) * | 2015-04-27 | 2019-01-09 | Dowaメタルテック株式会社 | 銀めっき材およびその製造方法 |
JP7011142B2 (ja) * | 2016-09-30 | 2022-01-26 | 日亜化学工業株式会社 | 発光装置、発光装置用パッケージ及び発光装置の製造方法 |
JP6877210B2 (ja) * | 2017-03-30 | 2021-05-26 | 株式会社Kanzacc | 銀メッキ銅系基材およびその製造方法 |
JP7231720B2 (ja) * | 2019-04-22 | 2023-03-01 | Ngkエレクトロデバイス株式会社 | パッケージおよびパッケージ用の金属枠体 |
JP7401877B2 (ja) * | 2021-02-18 | 2023-12-20 | 沢井製薬株式会社 | 打錠臼 |
WO2023189419A1 (ja) * | 2022-03-30 | 2023-10-05 | 古河電気工業株式会社 | 電気接点材料、ならびにこれを用いた接点、端子およびコネクタ |
CN117222782A (zh) * | 2022-03-30 | 2023-12-12 | 古河电气工业株式会社 | 电接点材料以及使用其的接点、端子及连接器 |
WO2023189417A1 (ja) * | 2022-03-30 | 2023-10-05 | 古河電気工業株式会社 | 電気接点材料、ならびにこれを用いた接点、端子およびコネクタ |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101101950A (zh) * | 2006-07-06 | 2008-01-09 | 松下电工株式会社 | 通过向基底材料实施电镀银处理而形成的银膜 |
CN101405863A (zh) * | 2006-03-27 | 2009-04-08 | 飞兆半导体公司 | 使用涂覆有金属的导线的半导体装置及电部件制造 |
JP2009144248A (ja) * | 2005-07-05 | 2009-07-02 | Furukawa Electric Co Ltd:The | 電子機器用析出型銅合金材料及びその製造方法 |
CN102257647A (zh) * | 2008-12-19 | 2011-11-23 | 古河电气工业株式会社 | 光半导体装置用引线框及其制造方法 |
CN102667989A (zh) * | 2010-02-12 | 2012-09-12 | 古河电气工业株式会社 | 可动接点部件用银包覆复合材料、其制造方法以及可动接点部件 |
CN102804429A (zh) * | 2009-06-24 | 2012-11-28 | 古河电气工业株式会社 | 光半导体装置用引线框架及其制造方法以及光半导体装置 |
CN102844897A (zh) * | 2010-06-15 | 2012-12-26 | 古河电气工业株式会社 | 光半导体装置用引线框架、光半导体装置用引线框架的制造方法以及光半导体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6335107B1 (en) * | 1999-09-23 | 2002-01-01 | Lucent Technologies Inc. | Metal article coated with multilayer surface finish for porosity reduction |
US20020185716A1 (en) * | 2001-05-11 | 2002-12-12 | Abys Joseph Anthony | Metal article coated with multilayer finish inhibiting whisker growth |
CN102575369B (zh) * | 2009-06-29 | 2015-08-05 | Om产业股份有限公司 | 电气元件的制造方法和电气元件 |
JP4629154B1 (ja) * | 2010-03-23 | 2011-02-09 | Jx日鉱日石金属株式会社 | 電子材料用銅合金及びその製造方法 |
KR101603393B1 (ko) * | 2011-05-02 | 2016-03-14 | 후루카와 덴키 고교 가부시키가이샤 | 구리합금 판재 및 그의 제조방법 |
-
2013
- 2013-08-05 JP JP2013162309A patent/JP6085536B2/ja active Active
-
2014
- 2014-06-10 KR KR1020140069818A patent/KR20150016885A/ko not_active Application Discontinuation
- 2014-06-19 CN CN201410274659.6A patent/CN104339751B/zh active Active
- 2014-06-25 TW TW103121959A patent/TWI647345B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009144248A (ja) * | 2005-07-05 | 2009-07-02 | Furukawa Electric Co Ltd:The | 電子機器用析出型銅合金材料及びその製造方法 |
CN101405863A (zh) * | 2006-03-27 | 2009-04-08 | 飞兆半导体公司 | 使用涂覆有金属的导线的半导体装置及电部件制造 |
CN101101950A (zh) * | 2006-07-06 | 2008-01-09 | 松下电工株式会社 | 通过向基底材料实施电镀银处理而形成的银膜 |
CN102257647A (zh) * | 2008-12-19 | 2011-11-23 | 古河电气工业株式会社 | 光半导体装置用引线框及其制造方法 |
CN102804429A (zh) * | 2009-06-24 | 2012-11-28 | 古河电气工业株式会社 | 光半导体装置用引线框架及其制造方法以及光半导体装置 |
CN102667989A (zh) * | 2010-02-12 | 2012-09-12 | 古河电气工业株式会社 | 可动接点部件用银包覆复合材料、其制造方法以及可动接点部件 |
CN102844897A (zh) * | 2010-06-15 | 2012-12-26 | 古河电气工业株式会社 | 光半导体装置用引线框架、光半导体装置用引线框架的制造方法以及光半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20150016885A (ko) | 2015-02-13 |
JP6085536B2 (ja) | 2017-02-22 |
TWI647345B (zh) | 2019-01-11 |
CN104339751A (zh) | 2015-02-11 |
JP2015030892A (ja) | 2015-02-16 |
TW201506209A (zh) | 2015-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104339751B (zh) | 铜条、带镀敷的铜条以及引线框 | |
CN105189792B (zh) | 热轧铜板 | |
CN105960484B (zh) | 耐热性优异的带表面包覆层的铜合金板条 | |
CN110506132A (zh) | Cu-Co-Si系铜合金板材和制造方法以及使用了该板材的部件 | |
CN101743333A (zh) | 铜合金板 | |
KR102390232B1 (ko) | 커넥터용 단자재 및 그 제조 방법 | |
KR102355331B1 (ko) | 주석 도금 구리 합금 단자재 및 그 제조 방법 | |
DE102004024114A1 (de) | Sputter-Target aus einer Legierung auf Ag-Bi-Basis und Verfahren zur Herstellung desselben | |
MX2011013944A (es) | Lamina de acero revestido de imnersion en caliente de zn-al.mg y proceso para producir la misma. | |
TWI522497B (zh) | 電鍍銅用含磷銅陽極,其製造方法及電鍍銅之方法 | |
CN103429771B (zh) | 弯曲加工性优异的Cu-Ni-Si系合金条 | |
Seakr | Microstructure and crystallographic characteristics of nanocrystalline copper prepared from acetate solutions by electrodeposition technique | |
KR20170125805A (ko) | 구리합금재료 및 그 제조 방법 | |
KR20170138391A (ko) | 구리 합금 판재 및 그 제조 방법 | |
JP4041452B2 (ja) | 耐熱性に優れた銅合金の製法 | |
JP2010202946A (ja) | 銅合金材及び銅合金材の製造方法 | |
US20130075272A1 (en) | Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method | |
CN105908230B (zh) | 电子元件用镀Sn材料 | |
JP5587935B2 (ja) | Snめっき材 | |
JP4280287B2 (ja) | 耐熱性に優れた電気・電子部品用銅合金 | |
JP2008001975A (ja) | ナノ結晶fcc合金 | |
JP6345290B1 (ja) | プレス加工後の寸法精度を改善した銅合金条 | |
MELCIU et al. | Pulse-electroplating: Process parameters and their influence on the formed microstructure | |
KR20240010294A (ko) | 층상구조를 포함하는 구리-은 합금 박판 및 이의 제조방법 | |
Ebrahimi et al. | Evolution of texture in electrodeposited Ni/Cu layered nanostructures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210408 Address after: Osaka Japan Patentee after: NEOMAX MAT Co.,Ltd. Address before: Ibaraki Patentee before: SH Copper Co.,Ltd. |
|
TR01 | Transfer of patent right |