CN104332523A - 一种基于石墨烯的三模复合探测器 - Google Patents
一种基于石墨烯的三模复合探测器 Download PDFInfo
- Publication number
- CN104332523A CN104332523A CN201410402836.4A CN201410402836A CN104332523A CN 104332523 A CN104332523 A CN 104332523A CN 201410402836 A CN201410402836 A CN 201410402836A CN 104332523 A CN104332523 A CN 104332523A
- Authority
- CN
- China
- Prior art keywords
- graphene
- detector element
- photosensor chip
- microstrip antenna
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 28
- 229910021389 graphene Inorganic materials 0.000 title claims description 28
- 239000002131 composite material Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 claims description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical group [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 4
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Waveguide Aerials (AREA)
- Details Of Aerials (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
本发明涉及一种基于石墨烯的三模复合探测器,所述的三模探测器包括最底层的基座,基座上面由下到上依次间隔设置第一探测器元件、第二探测器元件和微带天线;第一探测器元件固定在基座上,第二探测器元件和微带天线的两端通过支架固定在基座上;微带天线用于接收亚毫米波,第一探测元件和第二探测器元件分别用于接收两个不同波段的光谱辐射,从而形成一种三模复合探测器;该复合探测器能获取更加全面的目标物信息,有利于提高探测器的抗干扰能力。
Description
技术领域
本发明涉及一种基于石墨烯的三模复合探测器,属于多模、多光谱复合探测中的探测器技术。
背景技术
亚毫米波天线具有距离分辨率高、波束宽,适于大范围搜索、截获目标,并且亚毫米波能从目标发射波中提取频谱、幅度、相位、极化等多种信息,穿透烟雾、沙尘能力强;与微波相比,因波束窄而有更高的分辨率和跟踪精度,天线尺寸小、器件体积小,能产生大的多普勒效应,有利于分辨慢速运动目标,但易受电磁波干扰。红外和紫外的双波段探测可以同时获取目标在不同波段的辐射特征,有利于提高探测器的抗干扰能力。
将亚毫米波、红外和紫外相结合是获取被探测目标更为丰富信息的一种现实而有效的技术途径。在某些应用***中要求结构紧凑、体积小且同轴共视场。将天线作为光学探测器的窗口可实现共孔径探测,但该天线必须透光。石墨烯是由碳原子排列成的平面二维蜂窝状晶格结构,在红外和紫外波段有着很高的透过率,并且在电学性能,力学性能以及导热性能方面都有出色的表现。因此,可以采用石墨烯替代以往的微带天线中的金属薄膜,制备透红外和紫外的亚毫米波天线,其与红外光敏芯片和紫外光敏芯片的结合可以实现三模复合的叠层探测器。
发明内容
本发明的目的是用于提供一种基于石墨烯的三模复合探测器,用以解决某些探测***中要求探测精度高、结构紧凑、体积小的技术问题。
为实现上述目的,本发明的方案包括一种基于石墨烯的三模复合探测器,所述的三模探测器包括最底层的基座,基座上面由下到上依次间隔设置第一探测器元件、第二探测器元件和微带天线;所述的微带天线为亚毫米波微带天线,所述微带天线的绝缘介质基片上面为石墨烯导电薄膜,石墨烯导电薄膜上刻蚀出的缝隙成阵列分布,在绝缘介质基片另一面,与石墨烯导电薄膜上每个缝隙对应位置都印制有金属馈线。
第一探测器元件固定在基座上,第二探测器元件和微带天线的两端通过支架固定在基座上。
第一探测器元件为红外光敏芯片,第二探测器元件为紫外光敏芯片,所述的紫外光敏芯片和红外光敏芯片的间距为20~100μm,紫外光敏芯片和绝缘介质基片的间距为20~100μm。
所述绝缘介质基片选用红外和紫外透过好的绝缘材料:二氧化硅或蓝宝石;所述金属馈线由铬/金(Cr/Au)或铜(Cu)制成。
红外光敏芯片所用材料为InSb、HgCdTe或超晶格材料;所述的紫外光敏芯片所用材料为SiC、ZnO、CdS、金刚石膜或AlXGa1-XN材料,其中,0≤X≤1。
所述石墨烯导电薄膜为2-8层石墨烯薄膜。
本发明的技术方案通过将微带天线和不同的光敏元件组合在一起,构成一个基于石墨烯的三模复合探测器。微带天线可以接收亚毫米波,不同的光敏元件又可以获取目标在不同波段的辐射特性,能获取更加全面的目标物信息,有利于提高探测器的抗干扰能力。
另外,微带天线的导电薄膜使用的石墨烯薄膜,在红外和紫外波段有很高的透过率,当包含有红外、紫外光和亚毫米波的射线射入该三模探测器时,首先经过石墨烯微带天线,对亚毫米波进行接收,由于该微带天线整体对红外、紫外光有良好的透过率,所以其后设置的光敏元件可以对紫外、红外光进行探测;而紫外光敏元件采用对中波红外有良好透过的材料制成,因此在接收紫外辐射的同时,对其后的红外光敏元件的接收影响不大;将亚毫米波、红外和紫外相结合能够获取丰富的目标特性信息。
附图说明
图1是本发明实施例中三模复合探测器的侧视图;
图2是本发明实施例中三模复合探测器的俯视图;
图中1-绝缘介质基片,2-导电薄膜,3-金属馈线,4-紫外光敏芯片,5-中波红外光敏芯片,6-支架,7-基座。
具体实施方式
本发明所述的基于石墨烯的三模复合探测器,包括最底层的基座7,基座7上面由下到上依次间隔设置第一探测器元件5、第二探测器元件4和微带天线,第一探测器5元件固定在基座7上,第二探测器元件4的两端通过内支架固定在基座7上,微带天线的两端通过外支架固定在基座上。
下面结合附图对本发明做进一步详细的说明。
图1、图2所示为一种亚毫米波微带天线、紫外探测器及红外探测器复合的三模探测器,微带天线的绝缘介质基片上面为导电薄膜,导电薄膜上刻蚀出的缝隙成阵列分布,在绝缘介质基片另一面,与导电薄膜上每个缝隙对应位置都印制有金属馈线;微带天线的绝缘介质基片1由厚度为0.2毫米的蓝宝石制成,导电薄膜2为两层或者多层的石墨烯薄膜,导电薄膜上刻蚀出的缝隙图形为4×4元阵列图形;金属馈线3的材料选择铬/金,支架6为两组,较低的为内支架,较高的为外支架,外支架套在内支架外,内支架的高度为30μm,外支架的高度为60μm。且两个支架6的下端通过环氧胶粘贴在基座7上。微带天线的两端通过环氧胶粘贴在外支架上,紫外光敏芯片4的两端通过环氧胶粘贴在内支架上,中波红外光敏芯片5通过环氧胶直接粘贴在基座7上。天线工作的中心频率为85GHz。
中波红外光敏芯片5为单元探测器,所用材料为InSb。中波红外光敏芯片的制作材料还可以是HgCdTe或超晶格材料,其结构还可以为四象限或线列结构。紫外光敏芯片4为单元探测器,所用材料为SiC材料,其制作材料还可以是ZnO、CdS、金刚石膜或AlXGa1-XN材料(0≤X≤1)。
绝缘介质基片材料选取在红外和紫外波段具有良好透过率的材料,可以为二氧化硅、氟化镁或者尖晶石等,本发明所说的金属馈线3选取导电性能良好的金属材料,如铬/金(Cr/Au)或铬/铝(Cr/Al)等。
上给出一种具体的实施方式,但本发明不局限于所描述的实施方式。本发明的基本思路在于上述方案,对本领域普通技术人员而言,根据本发明的教导,设计出各种变形的模型、公式、参数并不需要花费创造性劳动。在不脱离本发明的原理和精神的情况下对实施方式进行的变化、修改、替换和变型仍落入本发明的保护范围内。
Claims (6)
1.一种基于石墨烯的三模复合探测器,其特征在于,所述的三模复合探测器包括最底层的基座,基座上面由下到上依次间隔设置第一探测器元件、第二探测器元件和微带天线;所述的微带天线为亚毫米波微带天线,所述微带天线的绝缘介质基片上面为石墨烯导电薄膜,石墨烯导电薄膜上刻蚀出的缝隙成阵列分布,在绝缘介质基片另一面,与石墨烯导电薄膜上每个缝隙对应位置都印制有金属馈线。
2.根据权利要求1所述的基于石墨烯的三模复合探测器,其特征在于,第一探测器元件固定在基座上,第二探测器元件和微带天线的两端通过支架固定在基座上。
3.根据权利要求1所述的基于石墨烯的三模复合探测器,其特征在于,第一探测器元件为红外光敏芯片,第二探测器元件为紫外光敏芯片,所述的紫外光敏芯片和红外光敏芯片的间距为20~100μm,紫外光敏芯片和绝缘介质基片的间距为20~100μm。
4.根据权利要求1所述的基于石墨烯的三模复合探测器,其特征在于,所述绝缘介质基片选用红外和紫外透过好的绝缘材料:二氧化硅或蓝宝石;所述金属馈线由铬/金(Cr/Au)或铜(Cu)制成。
5.根据权利要求3所述的基于石墨烯的三模复合探测器,其特征在于,红外光敏芯片所用材料为InSb、HgCdTe或超晶格材料;所述的紫外光敏芯片所用材料为SiC、ZnO、CdS、金刚石膜或AlXGa1-XN材料,其中,0≤X≤1。
6.根据权利要求1所述的基于石墨烯的三模复合探测器,其特征在于,所述石墨烯导电薄膜为2-8层石墨烯薄膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410402836.4A CN104332523B (zh) | 2014-08-15 | 2014-08-15 | 一种基于石墨烯的三模复合探测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410402836.4A CN104332523B (zh) | 2014-08-15 | 2014-08-15 | 一种基于石墨烯的三模复合探测器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104332523A true CN104332523A (zh) | 2015-02-04 |
CN104332523B CN104332523B (zh) | 2017-01-18 |
Family
ID=52407215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410402836.4A Active CN104332523B (zh) | 2014-08-15 | 2014-08-15 | 一种基于石墨烯的三模复合探测器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104332523B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711241A (zh) * | 2016-12-21 | 2017-05-24 | 西安交通大学 | 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 |
CN107271042A (zh) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | 一种探测器串音测试装置、其制作方法及串音测试方法 |
CN108630667A (zh) * | 2017-03-23 | 2018-10-09 | 中国空空导弹研究院 | 一种红外探测器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797256A2 (en) * | 1996-03-19 | 1997-09-24 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Three band and four band multispectral structures having two simultaneous signal outputs |
US20080062044A1 (en) * | 2006-09-07 | 2008-03-13 | Tareef Ibrahim Al-Mahdawi | Rfid device with microstrip antennas |
CN101419996A (zh) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | 红外—紫外多色探测器及其制备方法 |
CN102074803A (zh) * | 2009-11-20 | 2011-05-25 | 联想(北京)有限公司 | 微带馈电缝隙天线及移动终端 |
CN102741164A (zh) * | 2009-12-15 | 2012-10-17 | 格尔德殿工业公司 | 石墨烯在基底上大面积的沉积及包含其之制品 |
CN102738572A (zh) * | 2012-06-06 | 2012-10-17 | 东南大学 | 宽带定向微带贴片天线 |
CN102856628A (zh) * | 2011-03-08 | 2013-01-02 | 中国空空导弹研究院 | 一种毫米波/红外双模复合探测用共形天线 |
-
2014
- 2014-08-15 CN CN201410402836.4A patent/CN104332523B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797256A2 (en) * | 1996-03-19 | 1997-09-24 | HE HOLDINGS, INC. dba HUGHES ELECTRONICS | Three band and four band multispectral structures having two simultaneous signal outputs |
US20080062044A1 (en) * | 2006-09-07 | 2008-03-13 | Tareef Ibrahim Al-Mahdawi | Rfid device with microstrip antennas |
CN101419996A (zh) * | 2008-12-04 | 2009-04-29 | 中国电子科技集团公司第十三研究所 | 红外—紫外多色探测器及其制备方法 |
CN102074803A (zh) * | 2009-11-20 | 2011-05-25 | 联想(北京)有限公司 | 微带馈电缝隙天线及移动终端 |
CN102741164A (zh) * | 2009-12-15 | 2012-10-17 | 格尔德殿工业公司 | 石墨烯在基底上大面积的沉积及包含其之制品 |
CN102856628A (zh) * | 2011-03-08 | 2013-01-02 | 中国空空导弹研究院 | 一种毫米波/红外双模复合探测用共形天线 |
CN102738572A (zh) * | 2012-06-06 | 2012-10-17 | 东南大学 | 宽带定向微带贴片天线 |
Non-Patent Citations (1)
Title |
---|
BIAN WU, YANG HAO: "Material Region Division and Antenna Application of Monolayer and Multilayer Graphene", 《THE 8TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP 2014)》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711241A (zh) * | 2016-12-21 | 2017-05-24 | 西安交通大学 | 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 |
CN106711241B (zh) * | 2016-12-21 | 2018-04-17 | 西安交通大学 | 一种石墨烯透明电极金刚石基紫外探测器及其制备方法 |
CN108630667A (zh) * | 2017-03-23 | 2018-10-09 | 中国空空导弹研究院 | 一种红外探测器 |
CN108630667B (zh) * | 2017-03-23 | 2020-04-28 | 中国空空导弹研究院 | 一种红外探测器 |
CN107271042A (zh) * | 2017-04-27 | 2017-10-20 | 中国空空导弹研究院 | 一种探测器串音测试装置、其制作方法及串音测试方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104332523B (zh) | 2017-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Jaeschke et al. | A 240 GHz ultra-wideband FMCW radar system with on-chip antennas for high resolution radar imaging | |
US10222468B2 (en) | Miniaturized direct digital-to-impulse radar sensors in silicon | |
Chang et al. | Beam calibration of radio telescopes with drones | |
CN107508017B (zh) | 一种带吸型宽带频率选择结构及其应用 | |
CN103280625B (zh) | Gnss高精度测量天线 | |
CN107086369A (zh) | 一种基于强互耦效应的低rcs宽带宽角扫描相控阵天线 | |
RU2012151430A (ru) | Cистема и способ контроля композитных материалов с использованием радиочастотного отражения | |
Charrier et al. | Antenna development for astroparticle and radioastronomy experiments | |
CN104332523A (zh) | 一种基于石墨烯的三模复合探测器 | |
JP6220239B2 (ja) | 電磁波検出・発生装置 | |
US20190326682A1 (en) | Antenna and electronic device | |
CN104901005A (zh) | 小型化双频宽带圆极化贴片天线 | |
CN103219587B (zh) | 基于体硅mems工艺天线的太赫兹前端集成接收装置 | |
CN104316169B (zh) | 一种基于氧化钒光栅的太赫兹频段可调超宽带吸波体 | |
Thomas et al. | High resolution SAR imaging using a 240 GHz FMCW radar system with integrated on-chip antennas | |
Mandel et al. | Approach for long-range frequency domain chipless RFID tags towards THz | |
Tong et al. | 22/43 GHz low-insertion-loss dual-polarized multi-layer bandpass frequency selective surfaces for millimeter astronomy | |
Jamshidi-Zarmehri et al. | A review on through-wall communications: Wall characterization, applications, technologies, and prospects | |
Dittmeier et al. | Feasibility studies for a wireless 60 GHz tracking detector readout | |
Yuan et al. | Compact 120–140 GHz radar Tx/Rx sensors with on-chip antenna | |
CN103515701A (zh) | 基于圆环形金属网栅及透红外半导体的透红外微带天线 | |
CN103515711A (zh) | 一种基于随机金属网栅的透红外辐射微带天线 | |
CN105305034A (zh) | 带人工磁导体结构的高增益太赫兹天线 | |
Zhang et al. | Novel CMOS-based multi-band terahertz detector for passive imaging | |
CN108539428A (zh) | 一种全向辐射的宽带圆极化天线 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211022 Address after: 201306 room A206, building 1, No. 336, Tianjiao Road, Lingang xinpian District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: AVIC Kaimai (Shanghai) Infrared Technology Co.,Ltd. Address before: 471009 No. 166, Jiefang Road, Henan, Luoyang Patentee before: CHINA AIRBORNE MISSILE ACADEMY |
|
TR01 | Transfer of patent right |