CN104319346A - LED chip of high-thermal conductivity structure and preparation method of LED chip - Google Patents
LED chip of high-thermal conductivity structure and preparation method of LED chip Download PDFInfo
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- CN104319346A CN104319346A CN201410545166.1A CN201410545166A CN104319346A CN 104319346 A CN104319346 A CN 104319346A CN 201410545166 A CN201410545166 A CN 201410545166A CN 104319346 A CN104319346 A CN 104319346A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000010980 sapphire Substances 0.000 claims abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 29
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000003064 anti-oxidating effect Effects 0.000 claims description 5
- 239000012774 insulation material Substances 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 229910004337 Ti-Ni Inorganic materials 0.000 claims description 2
- 229910011209 Ti—Ni Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 241000218202 Coptis Species 0.000 description 4
- 235000002991 Coptis groenlandica Nutrition 0.000 description 4
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
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- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 238000005476 soldering Methods 0.000 description 1
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- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention belongs to the technical field of the photoelectric technology and specifically relates to an LED chip of a high-thermal conductivity structure and a preparation method of the LED chip. The LED chip of the high-thermal conductivity structure comprises a base plate and a sapphire substrate, an N semiconductor layer is arranged on one side, facing the base plate, of the bottom surface of the sapphire substrate; a luminescent layer and an N electrode are arranged on the two ends of the surface of one side, facing the base plate, of the N semiconductor layer; the surface of one side of the luminescent layer is connected with the N semiconductor layer, and a P semiconductor layer and a P electrode are orderly arranged on the surface of the other side of the luminescent layer; the N electrode is connected with the base plate by use of a first heat-conducting metal layer, while the P electrode is connected with the base plate by use of a second heat-conducting metal layer; insulating materials are arranged on the exposed outer surfaces of the first heat-conducting metal layer, the second heat-conducting metal layer, the luminescent layer, the P semiconductor layer, the P electrode and the N electrode. The heat generated by the LED chip of the high-thermal conductivity structure during working is transferred to the high-thermal conductivity base plate by use of the electrodes and the heat-conducting metal layers, and the heat dissipation property of the LED chip is 6 times that of a normally mounted chip.
Description
Technical field
The invention belongs to field of photoelectric technology, be specifically related to a kind of high conductive structure LED chip and preparation method thereof.
Background technology
Heat dissipation problem is the technical barrier that large-power LED needs emphasis to solve, and the quality of radiating effect is directly connected to life-span and the energy-saving effect of lamp.LED band-to-band transition producing light, does not contain infrared part in its spectrum, so the heat of LED chip can not distribute by radiation by electronics.If the heat in LED chip can not distribute in time, the aging of device can be accelerated.Once the temperature of LED chip exceedes most high-critical temperature (with according to not homepitaxy and technique, chip temperature is probably 150 DEG C), often cause LED chip eventual failure.The positive assembling structure of conventional LED chip (see Fig. 1) comprises gold thread 11, Sapphire Substrate 12, electrode 13, solid golden heat conduction glue-line 14, high thermal conductive substrate 15 form, its caloric requirement is through sapphire transmission, sapphire conductive coefficient 46W/MK, the most of heat of PN junction temperature is caused to be blocked, minor heat is only had to pass through to conduct to substrate, and the P/N electrode layer of positive assembling structure is homonymy with luminescence, P/N electrode area stop portions luminescent layer.
Summary of the invention
Technical problem to be solved by this invention is: provide that a kind of radiating efficiency is high, the high conductive structure LED chip of stable performance and preparation method thereof.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: provide a kind of high conductive structure LED chip, comprise substrate and Sapphire Substrate, described Sapphire Substrate is provided with N semiconductor layer towards substrate side, described N semiconductor layer is respectively equipped with luminescent layer and N electrode towards the two ends of substrate one side surface, and described luminescent layer one side surface is connected opposite side surface with N semiconductor layer and is provided with P semiconductor layer and P electrode successively;
Described N electrode is connected with substrate by the first heat-conducting metal layer, described P electrode is connected with substrate by the second heat-conducting metal layer, and the exposed outer surface of described first heat-conducting metal layer, the second heat-conducting metal layer, luminescent layer, P semiconductor layer, P electrode and N electrode is provided with insulation material layer.
Another technical scheme of the present invention, for providing a kind of preparation method of high conductive structure LED chip, comprises the steps:
Step S1: N semiconductor layer is set towards the side of substrate in Sapphire Substrate, described N semiconductor layer is respectively equipped with luminescent layer and N electrode towards the two ends on the surface of substrate side, and described luminescent layer one side surface is connected opposite side surface with N semiconductor layer and is provided with P semiconductor layer and P electrode successively;
Step S2: adopt vacuum splashing and plating, makes P electrode and N electrode conducting interconnection at luminescent layer, P semiconductor layer, P electrode, N electrode and N semiconductor surface to the Surface Creation conducting metal level of substrate side;
Step S3: utilize gold-tinted processing procedure, exposes P electrode and N electrode, adopts electroplating technology, P electrode and N gold electrode are electroplated the first heat-conducting metal layer and the second heat-conducting metal layer respectively;
Step S4: conducting metal level described in removal step 2;
Step S5: by the surface employing filling insulating material of exposed heat-conducting metal layer, luminescent layer, P semiconductor layer, P electrode, N electrode and N semiconductor layer out towards substrate side;
Step S6: grind one end that the first heat-conducting metal layer is not connected with P electrode and expose and weld with substrate, grinds one end that the second heat-conducting metal layer is not connected with N electrode and exposes and weld with substrate.
Beneficial effect of the present invention is: 1, height conductive structure LED chip of the present invention is relative to conventional LED chip, decreases gold thread packaging technology, saves lead frame, routing step, during application, without the need to die bond and wire-bonding package, but directly adopt reflow soldering on substrate, therefore cost is cheaper; 2, height conductive structure LED chip of the present invention there will not be because of gold thread rosin joint or loose contact cause do not work, glimmer, the problem such as light decay is large, therefore, compared to conventional package chip, stability is better; 3, compared to conventional package chip, height conductive structure LED chip density of the present invention adds 16 times, and encapsulation volume but reduces 80%, and Design of Luminaires space is larger; 4, height conductive structure LED chip of the present invention is when applying without crystal-bonding adhesive, be clipped in chip internal without the sapphire of high-heat coefficient, and heat during its work conducts on paramount heat-radiating substrate by electrode and heat-conducting metal layer, and heat dispersion is 6 times of positive cartridge chip.5, the P/N electrode layer of height conductive structure LED chip of the present invention and luminescence be not at homonymy, and P/N electrode area does not stop luminescent layer, improves the emittance area of light.
Accompanying drawing explanation
Fig. 1 is LED chip tradition formal dress structural representation;
Structural representation when Fig. 2 is high conductive structure LED chip generation conducting metal level in the specific embodiment of the invention;
Fig. 3 is the structural representation of high conductive structure LED chip in the specific embodiment of the invention;
Label declaration:
11, gold thread; 12, Sapphire Substrate; 13, electrode; 14, solid golden heat conduction glue-line; 15, high thermal conductive substrate;
21, Sapphire Substrate; 22, N semiconductor layer; 23, luminescent layer; 24, P semiconductor layer; 25, P electrode; 26, N electrode; 27, conducting metal level; 28, the first heat-conducting metal layer; 29, the second heat-conducting metal layer; 30, insulation material layer.
Embodiment
By describing technology contents of the present invention in detail, realized object and effect, accompanying drawing is coordinated to be explained below in conjunction with execution mode.
The design of most critical of the present invention is: provide a passage of heat to shed outward from PN junction by heat, the heat that PN junction produces is conducted on paramount heat-radiating substrate by highly heat-conductive material, sapphire layer is avoided in heat transmission, heat both can transmit by highly heat-conductive material, can meet again external circuit and connect.
Existing packed LED chip heat derived type structure: semiconductor (thermal source)-layer gold electrode (conductive coefficient 317w/mk)-sapphire (conductive coefficient 46w/mk).
Height conductive structure LED chip heat derived type structure of the present invention: semiconductor (thermal source)-layer gold electrode (conductive coefficient 317w/mk)-layers of copper (conductive coefficient 401w/mk).
Embodiment 1
Please refer to Fig. 2, Fig. 3, the invention provides a kind of high conductive structure LED chip, comprise substrate and Sapphire Substrate 21, described Sapphire Substrate 21 is provided with N semiconductor layer 22 towards substrate side, described N semiconductor layer 22 is respectively equipped with luminescent layer 23 and N electrode 26 towards the two ends of substrate one side surface, and described luminescent layer 23 1 side surface is connected opposite side surface and is provided with P semiconductor layer 24 and P electrode 25 successively with N semiconductor layer 22;
Described N electrode 26 is connected with substrate by the first heat-conducting metal layer 28, described P electrode 25 is connected with substrate by the second heat-conducting metal layer 29, and the exposed outer surface of described first heat-conducting metal layer 28, second heat-conducting metal layer 29, luminescent layer 23, P semiconductor layer 24, P electrode 25 and N electrode 26 is provided with insulation material layer 30.
Preferably, in above-mentioned high conductive structure LED chip, the thickness of described Sapphire Substrate 21 is 150-250 micron, the thickness of described P semiconductor layer 24 is 1-5 micron, the thickness of N semiconductor layer 22 is 1-5 micron, and the thickness of described P electrode 25 is 0.1-0.8 micron, and the thickness of described N electrode 26 is 0.1-0.8 micron, the thickness of described first heat-conducting metal layer 28 is 10-600 micron, and the thickness of described second heat-conducting metal layer 29 is 10-600 micron.
Preferably, in above-mentioned high conductive structure LED chip, described insulating material is insulating resin.The material of described first heat-conducting metal layer 28 and the second heat-conducting metal layer 29 is copper.The material of described P electrode 25 and N electrode 26 is AU.
The preparation method of above-mentioned high conductive structure LED chip is specific as follows:
Step S1: N semiconductor layer 22 is set towards the side of substrate in Sapphire Substrate 21, described N semiconductor layer 22 is respectively equipped with luminescent layer 23 and N electrode 26 towards the two ends on the surface of substrate side, and described luminescent layer 23 1 side surface is connected opposite side surface and is provided with P semiconductor layer 24 and P electrode 25 successively with N semiconductor layer 22;
Step S2: adopt vacuum splashing and plating, makes P electrode 25 and N electrode 26 conducting interconnection at luminescent layer 23, P semiconductor layer 24, P electrode 25, N electrode 26 and N semiconductor surface to the Surface Creation conducting metal level 27 of substrate side;
Step S3: utilize gold-tinted processing procedure, exposes P electrode 25 and N electrode 26, adopts electroplating technology, P electrode 25 and N gold electrode are electroplated the first heat-conducting metal layer 28 and the second heat-conducting metal layer 29 respectively;
Step S4: conducting metal level 27 described in removal step S2;
Step S5: by the surface employing filling insulating material of exposed heat-conducting metal layer, luminescent layer 23, P semiconductor layer 24, P electrode 25, N electrode 26 and N semiconductor surface out to substrate side;
Step S6: grind one end that the first heat-conducting metal layer 28 is not connected with P electrode 25 and expose and weld with substrate, grinds one end that the second heat-conducting metal layer 29 is not connected with N electrode 26 and exposes and weld with substrate.
Preferably, the preparation method of above-mentioned high conductive structure LED chip also comprises step S7: by thinning for Sapphire Substrate 21 or remove completely.
Preferably, in the preparation method of above-mentioned high conductive structure LED chip, the material of described first heat-conducting metal layer 28 and the second heat-conducting metal layer 29 is copper, the surface that described first heat-conducting metal layer 28 is not connected with P electrode 25 and substrate is provided with anti oxidation layer, and the surface that described second heat-conducting metal layer 29 is not connected with N electrode 26 and substrate is provided with anti oxidation layer.
Preferably, in the preparation method of above-mentioned high conductive structure LED chip, described insulating material is insulating resin, and the material of described P electrode 25 and N electrode 26 is AU, and the material of described conducting metal level 27 is Ti-Ni alloy.
Embodiment 2
The invention provides a kind of high conductive structure LED chip, comprise substrate and Sapphire Substrate 21, described Sapphire Substrate 21 is provided with N semiconductor layer 22 towards substrate side, described N semiconductor layer 22 is respectively equipped with luminescent layer 23 and N electrode 26 towards the two ends of substrate one side surface, and described luminescent layer 23 1 side surface is connected opposite side surface and is provided with P semiconductor layer 24 and P electrode 25 successively with N semiconductor layer 22;
Described N electrode 26 is connected with substrate by the first heat-conducting metal layer 28, described P electrode 25 is connected with substrate by the second heat-conducting metal layer 29, and the exposed outer surface of described first heat-conducting metal layer 28, second heat-conducting metal layer 29, luminescent layer 23, P semiconductor layer 24, P electrode 25 and N electrode 26 is provided with insulation material layer 30.
The preparation method of above-mentioned high conductive structure LED chip is specific as follows:
1, epitaxial wafer adopts cleaning, gold-tinted processing procedure, etching, evaporation layer gold to make P/N internal electrode layer gold, and described epitaxial slice structure is " sapphire+N semiconductor (preferred N gallium nitride)+luminescent layer+P semiconductor (preferred P gallium nitride) "; Electrode fabrication first coats photoresistance at P semi-conducting material, and exposure imaging etching p semiconductor and luminescent layer, expose N semiconductor layer, removes photoresist layer; Cleaning, evaporation chromium, platinum, layer gold, be coated with photoresistance, and exposure imaging etches, and form P/N electrode layer gold, namely electrode structure is chromium, platinum, layer gold.
2, adopt vacuum splashing and plating, conducting metal level will be generated at semiconductor surface, P/N electrode conduction is interconnected (preferred material is titanium+nickel), so that rear processing procedure electroplating current conducting.
3, utilize gold-tinted processing procedure, expose inner P/N electrode, by rear employing electroplating technology, P/N gold electrode is electroplated heat-conducting metal layer (copper), wherein conducting metal level (titanium+nickel) on P/N gold electrode face, can retain or not retain.
4, electroplating technology is adopted to make heat-conducting metal layer (i.e. layers of copper).After heat-conducting metal layer is formed, and utilize chemical treatments, " conducting metal level " removed, conducting metal level is " titanium+nickel ", only auxiliary electrical copper plate P/N electrode and the conducting of electroplating clamp point, must all remove clean after copper electroplating layer completes.
5, insulating resin is adopted to fill exposed out copper electrode, firm layers of copper and isolated electrode electric leakage.
6, grinding technics is adopted to expose heat-conducting metal layer (layers of copper), so that weld with substrate SMT.
7, by reducing thin of sapphire substrate or remove completely, so that semiconductor heat conduction is luminous.
8, because layers of copper is easy to oxidation in normal temperature environment, therefore carry out anti-oxidant surface treatment to the copper face that chip exposes, this anti oxidation layer will be decomposed gasification in SMT pyroprocess.
Height conductive structure LED chip of the present invention is compared to conventional package chip, and density adds 16 times, and encapsulation volume but reduces 80%, and Design of Luminaires space is larger; When applying without crystal-bonding adhesive, be clipped in chip internal without the sapphire of high-heat coefficient, heat during its work conducts on paramount heat-radiating substrate by electrode and heat-conducting metal layer, and heat dispersion is 6 times of positive cartridge chip.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every equivalents utilizing specification of the present invention and accompanying drawing content to do, or be directly or indirectly used in relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. one kind high conductive structure LED chip, it is characterized in that, comprise substrate and Sapphire Substrate, described Sapphire Substrate is provided with N semiconductor layer towards substrate side, described N semiconductor layer is respectively equipped with luminescent layer and N electrode towards the two ends of substrate one side surface, and described luminescent layer one side surface is connected opposite side surface with N semiconductor layer and is provided with P semiconductor layer and P electrode successively;
Described N electrode is connected with substrate by the first heat-conducting metal layer, described P electrode is connected with substrate by the second heat-conducting metal layer, and the exposed outer surface of described first heat-conducting metal layer, the second heat-conducting metal layer, luminescent layer, P semiconductor layer, P electrode and N electrode is provided with insulation material layer.
2. high conductive structure LED chip according to claim 1, it is characterized in that, the thickness of described Sapphire Substrate is 150-250 micron, the thickness of described P semiconductor layer is 1-5 micron, the thickness of N semiconductor layer is 1-5 micron, and the thickness of described P electrode is 0.1-0.8 micron, and the thickness of described N electrode is 0.1-0.8 micron, the thickness of described first heat-conducting metal layer is 10-600 micron, and the thickness of described second heat-conducting metal layer is 10-600 micron.
3. high conductive structure LED chip according to claim 1, is characterized in that, described insulating material is insulating resin.
4. high conductive structure LED chip according to claim 1, is characterized in that, the material of described first heat-conducting metal layer and the second heat-conducting metal layer is copper.
5. high conductive structure LED chip according to claim 1, is characterized in that, the material of described P electrode and N electrode is AU.
6. a preparation method for high conductive structure LED chip, is characterized in that, comprise the steps:
Step S1: N semiconductor layer is set towards the side of substrate in Sapphire Substrate, described N semiconductor layer is respectively equipped with luminescent layer and N electrode towards the two ends on the surface of substrate side, and described luminescent layer one side surface is connected opposite side surface with N semiconductor layer and is provided with P semiconductor layer and P electrode successively;
Step S2: adopt vacuum splashing and plating, makes P electrode and N electrode conducting interconnection at luminescent layer, P semiconductor layer, P electrode, N electrode and N semiconductor surface to the Surface Creation conducting metal level of substrate side;
Step S3: utilize gold-tinted processing procedure, exposes P electrode and N electrode, adopts electroplating technology, P electrode and N gold electrode are electroplated the first heat-conducting metal layer and the second heat-conducting metal layer respectively;
Step S4: conducting metal level described in removal step 2;
Step S5: by the surface employing filling insulating material of exposed heat-conducting metal layer, luminescent layer, P semiconductor layer, P electrode, N electrode and N semiconductor layer out towards substrate side;
Step S6: grind one end that the first heat-conducting metal layer is not connected with P electrode and expose and weld with substrate, grinds one end that the second heat-conducting metal layer is not connected with N electrode and exposes and weld with substrate.
7. the preparation method of high conductive structure LED chip according to claim 6, is characterized in that, also comprise step S7: by reducing thin of sapphire substrate or remove completely.
8. the preparation method of high conductive structure LED chip according to claim 6, it is characterized in that, the material of described first heat-conducting metal layer and the second heat-conducting metal layer is copper, the surface that described first heat-conducting metal layer is not connected with P electrode and substrate is provided with anti oxidation layer, and the surface that described second heat-conducting metal layer is not connected with N electrode and substrate is provided with anti oxidation layer.
9. the preparation method of high conductive structure LED chip according to claim 6, it is characterized in that, the thickness of described Sapphire Substrate is 150-250 micron, the thickness of described P semiconductor layer is 1-5 micron, the thickness of N semiconductor layer is 1-5 micron, and the thickness of described P electrode is 0.1-0.8 micron, and the thickness of described N electrode is 0.1-0.8 micron, the thickness of described first heat-conducting metal layer is 10-600 micron, and the thickness of described second heat-conducting metal layer is 10-600 micron.
10. the preparation method of high conductive structure LED chip according to claim 6, is characterized in that, described insulating material is insulating resin, and the material of described P electrode and N electrode is AU, and the material of described conducting metal level is Ti-Ni alloy.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104851513A (en) * | 2015-05-15 | 2015-08-19 | 富通集团（天津）超导技术应用有限公司 | Superconductive wire rod and preparation method thereof |
| CN104953022A (en) * | 2015-05-15 | 2015-09-30 | 富通集团（天津）超导技术应用有限公司 | Production method of superconducting wire |
| CN113406472A (en) * | 2021-05-17 | 2021-09-17 | 世强先进(深圳)科技股份有限公司 | Back analysis method for failure reasons of light-emitting chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
| CN1768434A (en) * | 2003-03-28 | 2006-05-03 | 吉尔科有限公司 | LED power package |
| CN1780002A (en) * | 2004-11-19 | 2006-05-31 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| US20110062486A1 (en) * | 2006-12-21 | 2011-03-17 | Palo Alto Research Center Incorporated | fabrication for electroplating thick metal pads |
| CN204144322U (en) * | 2014-10-15 | 2015-02-04 | 厦门英诺尔电子科技股份有限公司 | A kind of high conductive structure LED chip |
-
2014
- 2014-10-15 CN CN201410545166.1A patent/CN104319346A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1768434A (en) * | 2003-03-28 | 2006-05-03 | 吉尔科有限公司 | LED power package |
| CN1780002A (en) * | 2004-11-19 | 2006-05-31 | 中国科学院半导体研究所 | Production of inverted gallium nitride base light emitting diode chip |
| CN1731592A (en) * | 2005-08-26 | 2006-02-08 | 杭州士兰明芯科技有限公司 | Flip-chip bonded structure light-emitting diode and its manufacture method |
| US20110062486A1 (en) * | 2006-12-21 | 2011-03-17 | Palo Alto Research Center Incorporated | fabrication for electroplating thick metal pads |
| CN204144322U (en) * | 2014-10-15 | 2015-02-04 | 厦门英诺尔电子科技股份有限公司 | A kind of high conductive structure LED chip |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851513A (en) * | 2015-05-15 | 2015-08-19 | 富通集团（天津）超导技术应用有限公司 | Superconductive wire rod and preparation method thereof |
| CN104953022A (en) * | 2015-05-15 | 2015-09-30 | 富通集团（天津）超导技术应用有限公司 | Production method of superconducting wire |
| CN104851513B (en) * | 2015-05-15 | 2017-08-08 | 富通集团（天津）超导技术应用有限公司 | A kind of superconducting wire and preparation method thereof |
| CN113406472A (en) * | 2021-05-17 | 2021-09-17 | 世强先进(深圳)科技股份有限公司 | Back analysis method for failure reasons of light-emitting chip |
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