CN104319246A - Detection method and system for surface of silicon slice in product manufacturing process - Google Patents
Detection method and system for surface of silicon slice in product manufacturing process Download PDFInfo
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- CN104319246A CN104319246A CN201410544833.4A CN201410544833A CN104319246A CN 104319246 A CN104319246 A CN 104319246A CN 201410544833 A CN201410544833 A CN 201410544833A CN 104319246 A CN104319246 A CN 104319246A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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Abstract
An embodiment of the invention discloses a detection method and a system for surface of silicon slice in product manufacturing process. The method comprises the steps as follows: obtaining the surface image used for manufacturing the product silicon slice; determining the surface type of silicon slice according to the surface image; if the surface type of silicon slice is no defect type, processing the silicon slice according to the nest process of the product manufacturing process; if the surface type of silicon slice is unrepairable defect type, discarding the silicon slice; if the surface type of silicon slice is repairable defect type, repairing the silicon slice. In the embodiment of the invention, not discarding the unqualified silicon slice rather than discarding the unrepairable silicon slice of the unqualified silicon slice, repairing the repairable silicon slice, the repaired silicon slice can also be processed by the nest manufacturing process for reducing the discarding rate of the product.
Description
Technical field
The present invention relates to silicon chip surface detection technique field, particularly relate to detection method and the system of silicon chip surface in a kind of production process.
Background technology
In the manufacture craft of the products such as solar cell, the Surface testing of silicon chip is a very important ring.Because silicon chip is very thin and be highly brittle, in the process of producing, often there will be situations such as collapsing limit, unfilled corner, slight crack.The defects such as silicon chip surface also often there will be liquid residue in the fabrication of product, silk screen breaks grid, film forming is uneven.The silicon chip that there are these defects is all underproof, the whether qualified making directly having influence on operation below in production process of silicon chip surface.Therefore for preventing underproof silicon chip from entering follow-up flow process, need to carry out Surface testing to silicon chip.The detection method of silicon chip surface in prior art is the next operation process carried out by the qualified silicon chip of detection in production process; Underproof for detection silicon chip is carried out waste treatment.The discarded rate of the detection method of this silicon chip surface is higher.
Summary of the invention
The object of the embodiment of the present invention is to provide detection method and the system of silicon chip surface in a kind of production process, discards the higher problem of rate for solving the silicon chip existed in the detection method of silicon chip surface in production process.
The object of the embodiment of the present invention is achieved through the following technical solutions:
A detection method for silicon chip surface in production process, comprising:
Obtain the surface image of the silicon chip for making product;
The surface type of described silicon chip is determined according to described surface image;
If described surface type is intact swaged, described silicon chip is carried out next step operation process of described production process;
If described surface type is unrepairable deficiency, described silicon chip is carried out waste treatment;
If described surface type is can repair-deficiency type, described silicon chip is repaired.
Preferably, obtaining the surface image of the silicon chip for making product, comprising:
The surface image of the silicon chip for making product is obtained by scanning.
Preferably, obtaining the surface image of the silicon chip for making product, determining the surface type of described silicon chip according to described surface image, comprising:
Obtain the surface image that of described silicon chip is surperficial;
A described surperficial surface type is determined according to a described surperficial surface image;
If a described surperficial surface type is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If a described surperficial surface type is can repairing type or intact swaged, obtain the surface image on another surface of described silicon chip;
The surface type on another surface described is determined according to the surface image on another surface described;
If the surface type on another surface described is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If two surperficial surface types are intact swaged, determine that the surface type of described silicon chip is intact swaged;
If the surface type at least one surface is can repair-deficiency type, determine that the surface type of described silicon chip is for can repairing type.
Preferably, obtain the surface image that of described silicon chip is surperficial, comprising:
The first image collecting device is used to obtain the surperficial surface image of of described silicon chip;
Obtain the surface image on another surface of described silicon chip, comprising:
The second image collecting device be oppositely arranged with described first image collecting device is used to obtain the surface image on another surface of described silicon chip.
Preferably, determine the surface type of described silicon chip according to described surface image, comprising:
If determine that the complete and no liquid in the surface of described silicon chip remains according to described surface image, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but there is liquid residue, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete, film forming is even according to described surface image and complete, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete according to described surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, silk screen breakpoint number is between N1 ~ N2, and the surface type determining described silicon chip is for can repairing type; If determine that the imperfect and/or silk screen breakpoint number in the surface of described silicon chip is greater than N2 according to described surface image, determine that the surface type of described silicon chip is unrepairable type, N2 is greater than N1, and is integer.
A detection system for silicon chip surface in production process, comprising:
Image acquisition subsystem, for obtaining the surface image of the silicon chip for making product;
Divide kind processing device, for determining the surface type of described silicon chip according to described surface image; If described surface type is intact swaged, described silicon chip is sent to the processing unit of next step operation of described production process; If described surface type is unrepairable deficiency, described silicon chip is sent to waste treatment device; If described surface type is can repair-deficiency type, described silicon chip is sent to prosthetic device.
Preferably, described image acquisition subsystem specifically for:
The surface image of the silicon chip for making product is obtained by scanning.
Preferably, described image acquisition subsystem specifically for, obtain the surface image that of described silicon chip is surperficial;
Described point of kind processing device is specifically for the surface type determining this surface according to the surface image on this surface; If the surface type on this surface is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If the surface type on this surface is can repair-deficiency type or intact swaged, described image acquisition subsystem is specifically for the surface image obtaining another surface of described silicon chip;
Described point of kind processing device is specifically for the surface type determining this another surface according to the surface image on this another surface; If the surface type on this another surface is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type; If two surperficial surface types are intact swaged, determine that the surface type of described silicon chip is intact swaged; If the surface type at least one surface is can repair-deficiency type, determine that the surface type of described silicon chip is for can repairing type.
Preferably, described image acquisition subsystem comprises the first image collecting device and the second image collecting device:
Described first image collecting device is used for, and obtains the surface image that of described silicon chip is surperficial;
Described second image collecting device and described first image collecting device are oppositely arranged, and described second image collecting device is used for, and obtains the surface image on another surface of described silicon chip.
Preferably, when determining the surface type of described silicon chip according to described surface image, described point of kind processing device specifically for:
If determine that the complete and no liquid in the surface of described silicon chip remains according to described surface image, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but there is liquid residue, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete, film forming is even according to described surface image and complete, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete according to described surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, silk screen breakpoint number is between N1 ~ N2, and the surface type determining described silicon chip is for can repairing type; If determine that the imperfect and/or silk screen breakpoint number in the surface of described silicon chip is greater than N2 according to described surface image, determine that the surface type of described silicon chip is unrepairable type, N1 is greater than N2, and is integer.
The beneficial effect of the embodiment of the present invention is as follows:
In the embodiment of the present invention, not that underproof silicon chip is carried out waste treatment, but waste treatment is carried out to the silicon chip of unrepairable in underproof silicon chip, recovery repair process is carried out to recoverable silicon chip, silicon chip after reparation can also proceed next step operation process of production process, thus the discarded rate of product is reduced.Further, the surface image of silicon chip is obtained by scanning.The process of scanning is in a closed environment, can prevent the impact of environment stray light, thus makes to eliminate when detecting the impact of the factors such as reflective, interference.And can detect silicon chip surface in any operation of production process.Further, two relative image collecting devices are utilized to obtain the surperficial image of silicon chip two respectively.Do not need product to overturn, reduce fragment rate, thus further reduce the discarded rate of product in the process detected.
Accompanying drawing explanation
The flow chart of the detection method of silicon chip surface in a kind of production process that Fig. 1 provides for the embodiment of the present invention;
The method flow diagram of a kind of surface image obtaining silicon chip that Fig. 2 provides for the embodiment of the present invention and the surface type determining this silicon chip according to this surface image;
The schematic diagram of a kind of silicon chip surface detection system based on scanning that Fig. 3 provides for the embodiment of the present invention;
The schematic diagram of the detection system of silicon chip surface in a kind of production process that Fig. 4 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the detection method of silicon chip surface in a kind of production process provided by the invention and system are illustrated in greater detail.
Embodiments provide the detection method of silicon chip surface in a kind of production process, as shown in Figure 1, concrete steps are as follows:
Step 110: the surface image obtaining the silicon chip for making product.
Wherein, the kind of this silicon chip has multiple, and preferably, this silicon chip can be the silicon chip for making solar cell, also can be the silicon chip for making semiconductor, can be polysilicon chip, also can be monocrystalline silicon piece.
Step 120: the surface type determining this silicon chip according to this surface image.
Step 130: if this surface type is intact swaged, carries out next step operation process of this production process by this silicon chip.
Step 140: if this surface type is unrepairable deficiency, this silicon chip is carried out waste treatment;
Step 150: if this surface type is can repair-deficiency type, this silicon chip is repaired.
It should be pointed out that so-called zero defect, refer to that the target complete parameter of silicon chip surface is up to standard.So-called recoverable defect, refer to that the important goal parameter of silicon chip surface is up to standard, but by-end parameter is not up to standard.The defect of so-called unrepairable, refers to that the important goal parameter of silicon chip surface is not up to standard.Target component refers to the parameter that operation to be detected is paid close attention to; Important goal parameter refers to the apparent parameter that silicon chip surface plays a decisive role in the operation of production, and by-end parameter refers to the apparent parameter that silicon chip surface does not play a decisive role in the operation of production.To detect the silicon chip after matting, after this operation, what needs detected is the integrality of silicon chip surface and whether has liquid residue (such as, the color spot that chemical residues is formed, watermark etc.).Wherein, if silicon chip surface has slight crack, arrisdefect, collapses limit etc. defect, namely silicon chip surface is imperfect, and so this silicon chip cannot be used for making product, and therefore, silicon chip surface integrality is important goal parameter; If silicon chip surface has liquid residue, only need residual liquid to remove, this silicon chip still may be used for making product, and therefore, liquid residue is by-end parameter.If detect that silicon chip surface is complete, and no liquid remain, then important goal parameter and by-end parameter all up to standard, this surface is exactly zero defect.If detect that silicon chip surface is complete, but have liquid residue, then important goal parameter is up to standard, but by-end parameter does not have up to standard, and this surface is exactly there is recoverable defect.If detect that silicon chip surface exists slight crack, arrisdefect, collapses the defects such as limit, then important goal parameter does not have up to standard, and this surface is exactly the defect that there is unrepairable.
In the embodiment of the present invention, not that underproof silicon chip is carried out waste treatment, but waste treatment is carried out to the silicon chip of unrepairable in underproof silicon chip, recovery repair process is carried out to recoverable silicon chip, silicon chip after reparation can also proceed next step operation process of production process, thus the discarded rate of product is reduced.
In above-mentioned steps 110, the method obtaining the surface image of silicon chip has multiple, preferably, is obtained the surface image of silicon chip by scanning.Device for scanning has multiple, preferably, adopts scanner to obtain the surface image of silicon chip.
Above-described embodiment obtains the surface image of silicon chip by scanning, and the process of scanning is in a closed environment, can prevent the impact of environment stray light, thus makes to eliminate when detecting the impact of the factors such as reflective, interference.Such as, after a washing process, when detecting silicon chip surface, if silicon chip surface exists liquid residue, when obtaining silicon chip surface image with camera head, the factors such as reflective, interference can affect the silicon chip surface image of acquisition, thus cannot detect liquid residue; And adopt scanning means to obtain silicon chip surface image, then by the impact of the factors such as reflective, interference, therefore, can liquid residue be detected.And can detect silicon chip surface in any operation of production process.
In above-mentioned steps 110, when obtaining the surface image of the silicon chip for making product, if this silicon chip only needs to carry out one side detection, then obtain the surperficial image of silicon chip one; If when this silicon chip needs to carry out two-sided detection, determine the concrete implementation step of the surface type of this silicon chip as shown in Figure 2 according to this surface image in above-mentioned steps 110 and step 120, concrete steps are as follows:
Step 210: obtain the surface image that of this silicon chip is surperficial;
In this step, surface is any one in two surfaces of this silicon chip, does not have sequence requirement.
Step 220: the surface type determining this surface according to the surface image on this surface.
Step 230: if the surface type on this surface is unrepairable deficiency, determines that the surface type of this silicon chip is unrepairable type.
In this step, as long as detect that silicon chip surface exists the defect of unrepairable, just can determine that the surface type of this silicon chip is unrepairable type, not need the surface image obtaining another surface, be conducive to improving detection efficiency.
Step 240: if the surface type on this surface is can repair-deficiency type or intact swaged, obtain the surface image on another surface of this silicon chip.
Step 250: the surface type determining this another surface according to the surface image on this another surface.
Step 260: if the surface type on this another surface is unrepairable deficiency, determines that the surface type of this silicon chip is unrepairable type.
Step 270: if two surperficial surface types are intact swaged, determine that the surface type of this silicon chip is intact swaged.
Step 280: if the surface type at least one surface is can repair-deficiency type, determines that the surface type of this silicon chip is for can repairing type.
In above-mentioned steps 210, the method obtaining the surperficial surface image of of this silicon chip has multiple, and the embodiment of the present invention exemplifies wherein several:
One is that use image collecting device obtains two surperficial surface images.
In the method, after obtaining the surperficial surface image of of this silicon chip, need to overturn silicon chip, then obtained the surface image on another surface by same image collecting device.
Two is that use first image collecting device obtains the surperficial surface image of of this silicon chip; The second image collecting device be oppositely arranged with described first image collecting device is used to obtain the surface image on another surface of this silicon chip.
What is called is oppositely arranged, and refer to the first image collecting device and the second image collecting device, they are oppositely arranged for the side of carrying out IMAQ.
In the embodiment of the present invention, preferably, the first image collecting device and the second image collecting device are for carrying out the side of IMAQ, and detected silicon chip surface is parallel.
In the embodiment of the present invention, two relative image collecting devices are utilized to obtain the surperficial image of silicon chip two respectively.Do not need product to overturn, reduce fragment rate, thus further reduce the discarded rate of product in the process detected.
After matting, carry out two-sidedly being detected as example to silicon chip, determine that according to surface image the implementation of the surface type of this silicon chip can be: if determine that this surface exists slight crack, arrisdefect, collapses limit etc. defect according to the surface image of one surface, determine this silicon chip surface type be unrepairable type.If determine that this surface is complete and no liquid residual according to the surface image on this surface, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, but there is liquid residue, the surface type determining this silicon chip is for can repairing type; If determine that another complete and no liquid in surface remains according to another surface image, determine that the surface type of this silicon chip is intact swaged; If determine that another surface exists slight crack, arrisdefect, collapses limit etc. defect according to another surface image, determine that the surface type of this silicon chip is unrepairable type.If determine that above-mentioned surface is complete but there is liquid residue, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, but there is liquid residue, the surface type determining this silicon chip is for can repairing type; If determine that another complete and no liquid in surface remains according to another surface, determine that the surface type of this silicon chip is for can repairing type; If determine that this another surface exists slight crack, arrisdefect, collapses limit etc. defect according to this surface image, determine that the surface type of this silicon chip is unrepairable type.
With chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD), physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) after operation, carry out two-sidedly being detected as example to silicon chip, determine that according to surface image the implementation of the surface type of this silicon chip can be: if determine that this surface exists slight crack, arrisdefect, collapses limit etc. defect according to the surface image of one surface, determine this silicon chip surface type be unrepairable type.If determine that this surface is complete, film forming is even according to the surface image on this surface and complete, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining this silicon chip is for can repairing type; If determine that another surface is complete, film forming is even according to another surface image and complete, determine that the surface type of this silicon chip is intact swaged; If determine that another surface exists slight crack, arrisdefect, collapses limit etc. defect according to another surface image, determine that the surface type of this silicon chip is unrepairable type.If determine that above-mentioned surface is complete, but thin-film material subregion do not have film forming or film forming uneven, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining this silicon chip is for can repairing type; If determine that another surface is complete, film forming is even according to another surface image and complete, determine that the surface type of this silicon chip is for can repairing type; If determine that another surface exists slight crack, arrisdefect, collapses limit etc. defect according to another surface image, determine that the surface type of this silicon chip is unrepairable type.
After silkscreen process, carry out two-sidedly being detected as example to silicon chip, determine that according to surface image the implementation of the surface type of this silicon chip can be: according to silk screen breakpoint number, silicon chip surface is classified, if determine that this surface exists slight crack, arrisdefect, collapses limit, large area breaks grid etc. defect according to the surface image of one surface, determine this silicon chip surface type be unrepairable type.If determine that this surface is complete according to the surface image on this surface, and silk screen breakpoint number is less than N1 point, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, silk screen breakpoint number is between N1 ~ N2, and the surface type determining this silicon chip is for can repairing type; If determine that another surface is complete according to another surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of this silicon chip is intact swaged; If determine that another surface exists slight crack, arrisdefect, collapses limit, silk screen breakpoint number is greater than N2 etc. defect according to another surface image, determine that the surface type of this silicon chip is unrepairable type.If determine that this surface is complete according to the surface image on this surface, silk screen breakpoint number is between N1 ~ N2, the surface type of this silicon chip is judged: if determine that another surface is complete according to another surface image according to the surface image on another surface, silk screen breakpoint number is between N1 ~ N2, and the surface type determining this silicon chip is for can repairing type; If determine that another surface is complete according to another surface image, and silk screen breakpoint number is less than N1 point, and the surface type determining this silicon chip is for can repairing type; If determine that another surface exists slight crack, arrisdefect, collapses limit, silk screen breakpoint number is greater than N2 etc. defect according to another surface image, determine that the surface type of this silicon chip is unrepairable type.Wherein, N2 is greater than N1, and is integer.The value of N1, N2 is determined the requirement of silicon chip surface silk screen breakpoint number according in actual operation, preferably, and N1=5, N2=20.
It should be pointed out that the sorting technique of this surface type can be, but not limited to apply in above several process links, can also according in other process links to the requirement of silicon chip surface target component, to silicon chip surface carry out detection classification.
It should also be noted that in above each process links, if carry out one side detection, its implementation with reference to the implementation of above-mentioned two-sided detection, can repeat no more herein.
As shown in Figure 3, be a kind of silicon chip surface detection system based on scanning.In conjunction with this system, to detect the silicon chip surface after matting, the embodiment that effects on surface detects is as follows:
Data handling system 301 controls the image acquisition region that the silicon chip being used for making product is sent to the first image collecting device 303 by conveyer 302.The surface that first image collecting device 303 scans silicon chip obtains the surface image on this surface, and the surface image on this surface is sent to data handling system 301.
Data handling system 301 is according to the surface type of the surface image determination silicon chip on this surface.
If the surface type on this surface is unrepairable deficiency, data handling system 301 determines that the surface type of this silicon chip is unrepairable type, data handling system 301 controls conveyer 302 and this silicon chip is sent to hierarchy system 304, and controls hierarchy system 304 and be sorted in waste treatment operation by this silicon chip.
The kind of hierarchy system has multiple, and optionally, the puma manipulator that this hierarchy system is controlled by programmable logic controller (PLC) (Programmable Logic Controller, PLC) forms.
If the surface type on this surface is can repair-deficiency type or intact swaged, data handling system 301 controls the image acquisition region that this silicon chip is sent to the second image collecting device 305 by conveyer 302.Second image collecting device 305 and the first image collecting device 303 are oppositely arranged.Second image collecting device 305 scans another surface of silicon chip, obtains the surface image on another surface, and the surface image on this another surface is sent to data handling system 301.
Data handling system 301 determines the surface type on this another surface according to the surface image on this another surface.
If the surface type on this another surface is unrepairable deficiency, data handling system 301 determines that the surface type of this silicon chip is unrepairable type, control conveyer 302 and this silicon chip is sent to hierarchy system 304, and control hierarchy system 304 this silicon chip is sorted to waste treatment operation.
If two surperficial surface types are intact swaged, data handling system 301 determines that the surface type of this silicon chip is intact swaged, control conveyer 302 and this silicon chip is sent to hierarchy system 304, and control next step operation process that this silicon chip is sorted to this production process by hierarchy system 304.
If the surface type at least one surface is can repair-deficiency type, data handling system 301 surface type of determining this silicon chip is for can repairing type, control conveyer 302 and this silicon chip is sent to hierarchy system 304, and control hierarchy system 304 and this silicon chip is sorted to processing unit in matting.
It should be pointed out that above-mentioned conveyer 302 can be controlled by data handling system 301, also can can't help data handling system 301 controls, but the conveyer belt of a uniform motion.First image collecting device 303 and the second image collecting device 305 install the puma manipulator controlled by data handling system 301.Data handling system 301 is by the puma manipulator on control first image collecting device 303 and the second image collecting device 305, silicon chip to be detected is placed on the first image collecting device 303 and the second image collecting device 305, controls puma manipulator again after obtaining the image of silicon chip surface and silicon chip is placed on conveyer belt.
The embodiment of the present invention provides the detection system of silicon chip surface in a kind of production process, as shown in Figure 4, comprising: image acquisition subsystem 401 and point kind processing device 402.
Image acquisition subsystem 401, for obtaining the surface image of the silicon chip for making product.
Divide kind processing device 402, for determining the surface type of this silicon chip according to this surface image; If this surface type is intact swaged, this silicon chip is sent to the processing unit of next step operation of this production process; If this surface type is unrepairable deficiency, this silicon chip is sent to waste treatment device; If this surface type is can repair-deficiency type, this silicon chip is sent to prosthetic device.
Wherein prosthetic device refers to the processing unit of the previous step operation in this silicon chip place production process.
Preferably, this image acquisition subsystem 401 specifically for:
The surface image of the silicon chip for making product is obtained by scanning.
Preferably, when this silicon chip needs to carry out two-sided detection, this image acquisition subsystem 401 specifically for, obtain the surface image that of this silicon chip is surperficial; This point of kind processing device 402 is specifically for the surface type determining this surface according to the surface image on this surface; If the surface type on this surface is unrepairable deficiency, determine that the surface type of this silicon chip is unrepairable type; If the surface type on this surface is can repair-deficiency type or intact swaged, this image acquisition subsystem 401 is specifically for the surface image obtaining another surface of this silicon chip; This point of kind processing device 402 is specifically for the surface type determining this another surface according to the surface image on this another surface; If the surface type on this another surface is unrepairable deficiency, determine that the surface type of this silicon chip is unrepairable type; If two surperficial surface types are intact swaged, determine that the surface type of this silicon chip is intact swaged; If the surface type at least one surface is can repair-deficiency type, determine that the surface type of this silicon chip is for can repairing type.
Preferably, this image acquisition subsystem 401 comprises the first image collecting device and the second image collecting device:
This first image collecting device is used for, and obtains the surface image that of this silicon chip is surperficial;
This second image collecting device and this first image collecting device are oppositely arranged, and this second image collecting device is used for, and obtains the surface image on another surface of this silicon chip.
Above in this system, this image acquisition subsystem 401 corresponds to the first image collecting device 303 and the second image collecting device 305 in system shown in Figure 3.This point of kind processing device 402 is corresponding to data handling system 301, conveyer 302 and the hierarchy system 304 in system shown in Figure 3.
Preferably, above-described system, when determining the surface type of this silicon chip according to this surface image, this point of kind processing device 402 specifically for:
If determine that the complete and no liquid in the surface of described silicon chip remains according to described surface image, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of this silicon chip is complete according to this surface image, but there is liquid residue, the surface type determining this silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete, film forming is even according to described surface image and complete, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete according to described surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, silk screen breakpoint number is between N1 ~ N2, and the surface type determining described silicon chip is for can repairing type; If determine that the imperfect and/or silk screen breakpoint number in the surface of described silicon chip is greater than N2 according to described surface image, determine that the surface type of described silicon chip is unrepairable type, N2 is greater than N1, and is integer.
Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt the form of complete hardware embodiment, completely software implementation or the embodiment in conjunction with software and hardware aspect.And the present invention can adopt in one or more form wherein including the upper computer program implemented of computer-usable storage medium (including but not limited to magnetic disc store, CD-ROM, optical memory etc.) of computer usable program code.
The present invention describes with reference to according to the flow chart of the method for the embodiment of the present invention, equipment (system) and computer program and/or block diagram.Should understand can by the combination of the flow process in each flow process in computer program instructions realization flow figure and/or block diagram and/or square frame and flow chart and/or block diagram and/or square frame.These computer program instructions can being provided to the processor of all-purpose computer, special-purpose computer, Embedded Processor or other programmable data processing device to produce a machine, making the instruction performed by the processor of computer or other programmable data processing device produce device for realizing the function of specifying in flow chart flow process or multiple flow process and/or block diagram square frame or multiple square frame.
These computer program instructions also can be stored in can in the computer-readable memory that works in a specific way of vectoring computer or other programmable data processing device, the instruction making to be stored in this computer-readable memory produces the manufacture comprising command device, and this command device realizes the function of specifying in flow chart flow process or multiple flow process and/or block diagram square frame or multiple square frame.
These computer program instructions also can be loaded in computer or other programmable data processing device, make on computer or other programmable devices, to perform sequence of operations step to produce computer implemented process, thus the instruction performed on computer or other programmable devices is provided for the step realizing the function of specifying in flow chart flow process or multiple flow process and/or block diagram square frame or multiple square frame.
Although describe the preferred embodiments of the present invention, those skilled in the art once obtain the basic creative concept of cicada, then can make other change and amendment to these embodiments.So claims are intended to be interpreted as comprising preferred embodiment and falling into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. the detection method of silicon chip surface in production process, is characterized in that, comprising:
Obtain the surface image of the silicon chip for making product;
The surface type of described silicon chip is determined according to described surface image;
If described surface type is intact swaged, described silicon chip is carried out next step operation process of described production process;
If described surface type is unrepairable deficiency, described silicon chip is carried out waste treatment;
If described surface type is can repair-deficiency type, described silicon chip is repaired.
2. method according to claim 1, is characterized in that, obtaining the surface image of the silicon chip for making product, comprising:
The surface image of the silicon chip for making product is obtained by scanning.
3. method according to claim 1 and 2, is characterized in that, obtaining the surface image of the silicon chip for making product, determining the surface type of described silicon chip, comprising according to described surface image:
Obtain the surface image that of described silicon chip is surperficial;
A described surperficial surface type is determined according to a described surperficial surface image;
If a described surperficial surface type is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If a described surperficial surface type is can repairing type or intact swaged, obtain the surface image on another surface of described silicon chip;
The surface type on another surface described is determined according to the surface image on another surface described;
If the surface type on another surface described is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If two surperficial surface types are intact swaged, determine that the surface type of described silicon chip is intact swaged;
If the surface type at least one surface is can repair-deficiency type, determine that the surface type of described silicon chip is for can repairing type.
4. method according to claim 3, is characterized in that, obtains the surface image that of described silicon chip is surperficial, comprising:
The first image collecting device is used to obtain the surperficial surface image of of described silicon chip;
Obtain the surface image on another surface of described silicon chip, comprising:
The second image collecting device be oppositely arranged with described first image collecting device is used to obtain the surface image on another surface of described silicon chip.
5. the method according to any one of Claims 1 to 4, is characterized in that, determines the surface type of described silicon chip, comprising according to described surface image:
If determine that the complete and no liquid in the surface of described silicon chip remains according to described surface image, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but there is liquid residue, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete, film forming is even according to described surface image and complete, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete according to described surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, silk screen breakpoint number is between N1 ~ N2, and the surface type determining described silicon chip is for can repairing type; If determine that the imperfect and/or silk screen breakpoint number in the surface of described silicon chip is greater than N2 according to described surface image, determine that the surface type of described silicon chip is unrepairable type, N2 is greater than N1, and is integer.
6. the detection system of silicon chip surface in production process, is characterized in that, comprising:
Image acquisition subsystem, for obtaining the surface image of the silicon chip for making product;
Divide kind processing device, for determining the surface type of described silicon chip according to described surface image; If described surface type is intact swaged, described silicon chip is sent to the processing unit of next step operation of described production process; If described surface type is unrepairable deficiency, described silicon chip is sent to waste treatment device; If described surface type is can repair-deficiency type, described silicon chip is sent to prosthetic device.
7. system according to claim 6, is characterized in that, described image acquisition subsystem specifically for:
The surface image of the silicon chip for making product is obtained by scanning.
8. the system according to claim 6 or 7, is characterized in that:
Described image acquisition subsystem specifically for, obtain the surface image that of described silicon chip is surperficial;
Described point of kind processing device is specifically for the surface type determining this surface according to the surface image on this surface; If the surface type on this surface is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type;
If the surface type on this surface is can repair-deficiency type or intact swaged, described image acquisition subsystem is specifically for the surface image obtaining another surface of described silicon chip;
Described point of kind processing device is specifically for the surface type determining this another surface according to the surface image on this another surface; If the surface type on this another surface is unrepairable deficiency, determine that the surface type of described silicon chip is unrepairable type; If two surperficial surface types are intact swaged, determine that the surface type of described silicon chip is intact swaged; If the surface type at least one surface is can repair-deficiency type, determine that the surface type of described silicon chip is for can repairing type.
9. system according to claim 8, is characterized in that, described image acquisition subsystem comprises the first image collecting device and the second image collecting device:
Described first image collecting device is used for, and obtains the surface image that of described silicon chip is surperficial;
Described second image collecting device and described first image collecting device are oppositely arranged, and described second image collecting device is used for, and obtains the surface image on another surface of described silicon chip.
10. the system according to any one of claim 6 ~ 9, is characterized in that, when determining the surface type of described silicon chip according to described surface image, described point of kind processing device specifically for:
If determine that the complete and no liquid in the surface of described silicon chip remains according to described surface image, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but there is liquid residue, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete, film forming is even according to described surface image and complete, determine that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, but thin-film material subregion do not have film forming or film forming uneven, the surface type determining described silicon chip is for can repairing type; If determine that the surface of described silicon chip is imperfect according to described surface image, determine that the surface type of described silicon chip is unrepairable type; Or,
If determine that the surface of described silicon chip is complete according to described surface image, and silk screen breakpoint number is less than N1 point, determines that the surface type of described silicon chip is intact swaged; If determine that the surface of described silicon chip is complete according to described surface image, silk screen breakpoint number is between N1 ~ N2, and the surface type determining described silicon chip is for can repairing type; If determine that the imperfect and/or silk screen breakpoint number in the surface of described silicon chip is greater than N2 according to described surface image, determine that the surface type of described silicon chip is unrepairable type, N1 is greater than N2, and is integer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108818161A (en) * | 2018-07-24 | 2018-11-16 | 上海新昇半导体科技有限公司 | The rework system and method for silicon wafer |
| CN109870416A (en) * | 2019-01-22 | 2019-06-11 | 华灿光电（浙江）有限公司 | Graphite plate detection method and device |
| CN111584385A (en) * | 2020-05-20 | 2020-08-25 | 西安奕斯伟硅片技术有限公司 | Silicon wafer defect recording method and device |
| CN113032416A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Wafer defect analysis method and system |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108818161A (en) * | 2018-07-24 | 2018-11-16 | 上海新昇半导体科技有限公司 | The rework system and method for silicon wafer |
| CN109870416A (en) * | 2019-01-22 | 2019-06-11 | 华灿光电（浙江）有限公司 | Graphite plate detection method and device |
| CN111584385A (en) * | 2020-05-20 | 2020-08-25 | 西安奕斯伟硅片技术有限公司 | Silicon wafer defect recording method and device |
| CN113032416A (en) * | 2021-05-24 | 2021-06-25 | 晶芯成(北京)科技有限公司 | Wafer defect analysis method and system |
| CN114182236A (en) * | 2021-11-25 | 2022-03-15 | 晶澳太阳能有限公司 | Method for detecting abnormity of aluminum oxide coating equipment |
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