CN104284110A - 自发光互补金属氧化物半导体影像传感器封装 - Google Patents
自发光互补金属氧化物半导体影像传感器封装 Download PDFInfo
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Abstract
一微电子芯片包含与一发光二极管芯片整合的一互补金属氧化物半导体影像传感器。电路是建立在该芯片的上,以供共享电源方案。
Description
背景技术
互补金属氧化物半导体影像传感器产品有许多用途,举例来说,使用在相机内,在智能手机内,和在医学影像成像器内。所有上述的装置需要外部的光源。这在医学的内视镜产品上尤其明显。因为在身体里是黑暗的,内视镜的尖端需要一光源。第二,由于内科检查必须深入身体内的孔洞,内视镜末端必须小型化,例如气道的支流或血管。因此,辅助光源的需求有时候可能成为进一步小型化内视镜的限制因素。尤其如该照明源需要一电源传递是统会使设计复杂化。
传统的内视镜产品具有分离的照明是统和检测是统。这些可以透过授权给Shipp的美国专利号6,449,006,和其相关的光学组装或可在授权给Ishigami的美国专利号8,308,637中举例说明。图1说明在先前技术中一般性质的一内视镜是统100。一内视镜102是由成像头104所组成可选性的连接在锁环106的上,一互补金属氧化物半导体影像封装108包括一透镜与一光侦测器数组,像是一光电二极管数组(没有图标)。该影像封装108是被许多发光二极管110,112所包围。线束114藉由各自独立的导线分配至各发光二极管110,112和互补金属氧化物半导体影像封装108将该成像头104与一主控制器116耦合以提供讯号接收,经由处理形成可见的影像。
发明内容
本发明揭露的方式克服了上述的问题,且藉由结合了可能需要为成像提供照明的一个或多个发光二极管的一互补金属氧化物半导体影像封装提升该技术。
在一实施例中,一微电子芯片载有一互补金属氧化物半导体影像传感器是藉由整合一发光二极管发射器和该芯片来改良,使得该二极管发射器和该芯片共享一相同基板。举例来说,此整合组件是可形成于一芯片封装且利于一内视镜,照相机或其他成像设备的照明时使用。
就一方面而言,该基板是可由硅所组成,但是较佳选择为砷化镓。该微电子芯片的一发光二极管部分区域是可形成于砷化铝镓的上。在此范例中,该互补金属氧化物半导体传感器部分区域是可形成于砷化铟镓的上。该微电子芯片是可包含其他该微电子芯片的协助运作电路且该电路是可形成于未处理的砷化镓的上。
在一方面,该微电子芯片是可包括一发光二极管透镜间隔,其是用以提供该发光二极管发射器所投射的光线一第一光学路径。一互补金属氧化物半导体传感器透镜间隔是可提供一使光线传递至该互补金属氧化物半导体传感器的一第二光学路径。一光分路器是可设置于该发光二极管透镜间隔与该互补金属氧化物半导体传感器透镜间隔的间,是实质上将该第一光学路径与该第二光学路径隔离。
在一方面,该发光二极管发射器和该互补金属氧化物半导体影像传感器经由在该微电子芯片上的至少一共享电性连接来共享电源。举例来说,该共享电性连接是可为一共享电源线与/或一共享接地线。
在该微电子芯片上的该互补金属氧化物半导体传感器是可配置在一前面照射方向或一背面照射方向。
附图说明
图1是为一先前技术的一具照明的内视镜尖端。
图2是为一发光二极管。
图3是为可适用于本发明的一发光二极管芯片。
图4A显示由一发光二极管芯片自复数个方向所发射的光,且图4B显示光源被一反射表面制约而限制方向的一类似结构。
图5显示于一发光二极管芯片上整合一互补金属氧化物半导体传感器,且共享基板与电源线。
图6是为一类似图5的组件,但具有不同的共享电源的配置。
图7是为建构在一共享基板的一互补金属氧化物半导体传感器与一发光二极管芯片且在该基板上具有共享导线以共享电源的一芯片封装,其中该封装包括同时覆盖于一发光二极管芯片与互补金属氧化物半导体传感器的一透镜。
图8是为建构在一共享基板的一互补金属氧化物半导体传感器与一发光二极管芯片且在该基板上具有共享导线以共享电源的一芯片封装,其中该封装包括一透镜,是至少覆盖于该发光二极管芯片及该互补金属氧化物半导体传感器的其中的一者。
图9是为一包含一发光二极管芯片与一互补金属氧化物半导体传感器的芯片封装的制造工序流程图。
具体实施方式
一照明光源是可根据如下说明的不同实施例与一互补金属氧化物半导体成像封装结合。
共享电性连接的互补金属氧化物半导体传感器与光学二极管
一光学二极管,例如一发光二极管,是可形成一芯片置入一互补金属氧化物半导体传感器封装的周围结构。更具体的说,该发光二极管使用互补金属氧化物半导体传感器封装既有的电性导线。典型的互补金属氧化物半导体封装使用30到50毫瓦的功率,但是发光二极管是可使用100到150毫瓦的功率,所以此需求是可很容易地容纳在互补金属氧化物半导体电源线的设计中。而且,发光二极管是可具有或不具有透镜。如果需要50毫米的一光照范围,则该发光二极管可能需要一透镜来向外投射光线。如果光照范围小于50毫米,则该发光二极管可能不需要一透镜来向外投射光线。
图2显示一习知技术的发光二极管200的一基础结构。发光二极管的芯片202是该发光二极管的核心,但它是该发光二极管很小的部分。该发光二极管芯片202是被大型支架结构所环绕,包括与一阴极206连接的一砧座204,与一阳极210连接的一支柱208,围绕该芯片202且集中光线至一正面方向214的一反射空腔212,一焊线216,和一透镜218,例如一环氧树脂透镜外壳。在如下讨论实施例的上下文中会明白该发光二极管芯片202是被挑出且藉共享电源和/或接地线与该互补金属氧化物半导体传感器结合。不再需要如图2所示包括该砧座204和支柱208的额外的大型发光二极管组件。
图3是该发光二极管芯片202的一剖视图。该发光二极管芯片202是形成在一包括三族和/或五族元素的一基板300上,例如磷砷化镓(GaAsP)或磷化铝铟镓(AlGaInP)。值得注意的,该发光二极管基板是可由硅以外的物质所制成,而传统上互补金属氧化物半导体用硅来构成。光源产生部分区域是为夹在一n型掺杂层304与一p型掺杂层306的发光磊晶层302。藉由在发光二极管芯片202的顶端的一p型接触308来形成至p型掺杂层的电性连接。
一般而言,发光磊晶层302在两个方向放出光线-朝上和侧向。图4A说明光源是从一矩形磊晶层302a内的一点光源400a朝向上方402a和侧面方向404a,406a被放射出来。图4B说明光源是从一圆柱型磊晶层302b内的一点光源400b藉由一圆锥形反射空腔408的作用后仅朝上方402b发射光线。
图5中说明第一个共享电性接线的实施例。在此,一发光二极管芯片500与其关联的反射表面502和互补金属氧化物半导体传感器504在该传感器的载体506上结合。举例来说,电性导线的电源线508和接地线510是位于载体506上。该发光二极管芯片500与互补金属氧化物半导体传感器504共享这些电性导线,举例来说,在该传感器504的周围512共享电源藕合配置。然而图5仅说明了一个发光二极管芯片500与该互补金属氧化物半导体传感器504相连,但也可存在着许多发光二极管与一单一个传感器结合。该互补金属氧化物半导体传感器504是可是为金属层是位于光电二极管的上的前面照射型或金属层是位于光电二极管的相反方向的背面照射型的两者的一。因为该电性导线是位于载体层,前面照射型和背面照射型两种架构都能运作。
在第二个实施例中,该发光二极管芯片与其相关的反射面是在该互补金属氧化物半导体传感器芯片周围结合。图6显示一具有0.9毫米乘0.9毫米的互补金属氧化物半导体传感器数组600,包含有围绕在像素数组或互补金属氧化物半导体传感器608的周围的一电源线602和一接地线604后,具有0.25毫米乘0.25毫米大小。该发光二极管芯片(未显示)是可位于电源线和接地线602,604的上,而且是可跟互补金属氧化物半导体传感器608共享电源和接地。在此实施例中,该互补金属氧化物半导体传感器608必须为前面照射,因为在周围606的电性导线是在可触及包含光电二极管的影像数组或互补金属氧化物半导体传感器608的同一侧。
与发光二极管结合的透镜化摄影机芯片
前述图5与图6的实施例可以进一步藉由增加的一单一光学分割透镜分割由发光二极管所投射光线与互补金属氧化物半导体传感器所收集光线来改进。这概念运用于半导体堆栈方法来制造如晶圆结构层的晶圆级光学组件。将光学晶圆结构整合到互补金属氧化物半导体传感器封装中形成一单一芯片。产生一整合芯片产品,可以在具有非常小的芯片覆盖区和用来制造超薄和紧致组件的薄型封装的可回焊的互补金属氧化物半导体硅芯片上实现照相机功能。
图7显示一种如上所述实施例的一立方芯片700。一发光二极管芯片702和一互补金属氧化物半导体芯片704共享一共同透镜706,包括在一发光二极管透镜间隔710的上的发光二极管透镜部分区域708和一在传感器间隔714的上的传感器透镜部分区域712。一光分路器716将发光二极管透镜间隔710与传感器间隔714分离。光分路器是镀上或由不透明物质所制成来防止发光二极管芯片702产生的光线进入到传感器的间隔714。该传感器透镜部分区域712集中入射光线718来投射到该互补金属氧化物半导体传感器704。这通常代表该透镜的传感器透镜部分区域712是为凸透镜,也就是正透镜。
该发光二极管透镜部分区域708引导光线720自发光二极管芯片702经过该发光二极管间隔710向外发射。发光二极管透镜部分区域708是可是凸透镜或正透镜当以会聚光线为目的时,或者该透镜亦是可为凹透镜或负透镜当以发散光线为目的时。该发光二极管的透镜区域和该传感器透镜部分是可因为光线会聚或发散而有不同的光学特性。在该范例中,两个部分区域708,712是为光会聚,他们是可有不同的焦距深度。互补金属氧化物半导体芯片704和发光二极管芯片702藉由导线722,724共享电源,例如和前述揭露一样从工作电压电极和接地线共享电源。一选择性的相对增加硬度的顶层726,例如护罩玻璃,是可保护该共享透镜706。
该共享透镜706是可是自一块环氧树脂冲压或压印而成,举例来说,其中藉由一冲压来形成共享透镜706,是包括一用以形成该发光二极管透镜部分区域708的第一附加部分和形成该传感器透镜部分区域712的第二附加部分。当该共享透镜是由光蚀刻法制程技术制成,其光罩是含盖住该发光二极管部分和该传感器部分。
图8说明如图7的一实施例,但是该共享透镜706仅覆盖传感器的间隔714。图7和图8相同部件的类似编号保留来说明该发光二极管透镜部分区域708是选择性的省略。
在共享一基板上制造发光二极管和互补金属氧化物半导体
基本概念是在相同基板如砷化镓上制作互补金属氧化物半导体和发光二极管。传统上互补金属氧化物半导体是在硅基板上制作。然而,砷化镓亦可被用为互补金属氧化物半导体装置的一替代基板。发光二极管一般是在铝砷化镓基板上制成,该基板是可由砷化镓来形成。因此,它有是可从砷化镓开始,如前所述的修改互补金属氧化物半导体部分区域和发光二极管部分区域,然后继续在基板的修改部分区域制作发光二极管和互补金属氧化物半导体组件。
砷化镓具有一晶格常数565.35皮米(pm)。铝砷化镓具有一晶格常数565.33皮米,所以是可在砷化镓基板上形成晶格化成长而不会造成显著的晶格应变。相反的,砷化铟镓具有一晶格常数586.87皮米,所以其是无法在砷化镓基板上形成而不造成显著的晶格应变。实际上,习知技术通常是在磷化铟上形成砷化铟镓的成长晶格。在本发明所揭露,砷化铟镓是藉由布植铟到一砷化镓基板内所形成。铝砷化镓是可自砷化镓基板上直接成长,或藉由布植铝到砷化镓内所形成。
在发光二极管一侧,藉由布植铝而修改形成的铝砷化镓而制成一红外线的发射器,是能产生波长大于760奈米的红外光。相反的,藉由布植铟修改传感器一侧而形成的砷化铟镓能产生一侦测波长介于700到2600奈米的红外线的传感器。
举例来说,图9说明一如前述制造一整合基板的流程。该基板是可包括一发光二极管的铝砷化镓部分区域和一互补金属氧化物半导体影像传感器的砷化铟镓部分区域。该制造流程900从步骤P902开始,将一砷化镓基板904覆盖上一光阻906,并移除一区域908的光阻以作为铝布植来形成铝砷化镓。步骤P912是先将光阻906移除,并添加一新的光阻914覆盖于铝砷化镓材质的区域908。将铟是布植916到原本光阻906的下而今裸露的砷化镓部分区域以形成砷化铟镓。最后,步骤P918是移除覆盖于铝砷化镓部分区域的光阻914。最终的基板具有一提供给发光二极管用的铝砷化镓部分区域和一提供给互补金属氧化物半导体影像传感器用的砷化铟镓部分区域922。
步骤P924形成其他影像传感器必需的电子电路,举例来说,配套组件包括逻辑电路例如读出电路是可在未布植铝或铟的砷化镓基板上形成。
步骤P926,该互补金属氧化物半导体传感器是在由步骤P918所产生的砷化铟镓材质922的上形成。熟知的详细制造互补金属氧化物半导体传感器的技艺,举例来说,如授权给Dickinson的美国专利号5,631,704所述,和授权给Clark的6,133,563等,这两者可完全参照本发明相同的延伸来结合。步骤P928,该LED芯片是在由步骤P912所产生的铝砷化镓材质920的上形成。熟知的详细制造发光二极管芯片的技艺,举例来说,如授权给Katoh的美国专利号5,032,960所述,和授权给Yang的8,368,114等,这两者亦可完全参照本发明相同的延伸来结合。
在步骤P930中,一组合透镜是形成给该发光二极管芯片和该互补金属氧化物半导体传感器使用。举例来说,这个透镜是可利用冲压或压纹制法形成。如前所述该透镜的一个部分区域是提供给发光二极管投射的用且另一部分是给互补金属氧化物半导体接收光的用。该透镜组合是堆栈在整合的发光二极管-互补金属氧化物半导体芯片的上。最终产品是为一芯片组和一透镜组的一整合是统,是由一发光二极管芯片的作动来发射光线,也可由一互补金属氧化物影像传感器的作动来感测光线。此外,当复数个互补金属氧化物影像传感器被整合在此一整合是统中时,这些复数个传感器是可用来做3D影像感测。
前述讨论在此技艺中的那些技术可理解为当作范例而非当作限制。那些不能分离本发明范围和精神的表示和说明皆可视为非实质的改变。如前所述,发明者特此宣告他们的发明是依靠均等论,如有必要在本专利权申请范围中保护本专利的完整权利。
Claims (17)
1.一种在微电子芯片中承载互补金属氧化物半导体影像传感器,其改良包括:
发光二极管发射器与该芯片整合。
2.根据权利要求1所述的微电子芯片,其是形成于砷化镓基板上。
3.根据权利要求2所述的微电子芯片,其包括发光二极管部分区域,是形成于砷化铝镓的上。
4.根据权利要求2所述的微电子芯片,其包括互补金属氧化物半导体传感器部分区域,是形成于砷化铟镓的上。
5.根据权利要求2所述的微电子芯片,其包括形成在砷化铝镓的上的发光二极管部分区域以及形成在砷化铟镓的上的互补金属氧化物半导体传感器部分区域。
6.根据权利要求1所述的微电子芯片,其包括该微电子芯片的协助运作电路,是形成于未处理的砷化镓的上。
7.根据权利要求1所述的微电子芯片,其包括发光二极管透镜间隔,是用以提供该发光二极管发射器所投射的光线光学路径。
8.根据权利要求1所述的微电子芯片,其包括互补金属氧化物半导体传感器透镜间隔,是用以提供光学路径使光线传递至该互补金属氧化物半导体传感器。
9.根据权利要求1所述的微电子芯片,其包括:
发光二极管透镜间隔,是用以提供该发光二极管发射器所投射的光线第一光学路径;
互补金属氧化物半导体传感器透镜间隔,是用以提供第二光学路径使光线传递至该互补金属氧化物半导体传感器;以及
光分路器,是实质上将该第一光学路径与该第二光学路径隔离。
10.根据权利要求1所述的微电子芯片,其包括该发光二极管发射器与该互补金属氧化物半导体影像传感器共享的至少一个共享电性连接。
11.根据权利要求10所述的微电子芯片,其中该共享电性连接是包括电源线。
12.根据权利要求10所述的微电子芯片,其中该共享电性连接是包括接地线。
13.根据权利要求10所述的微电子芯片,其中该至少一个共享电性连接包括电源线和接地线。
14.根据权利要求13所述的微电子芯片,其中该互补金属氧化物半导体影像传感器是在前面照射方向。
15.根据权利要求13所述的微电子芯片,其中该互补金属氧化物半导体影像传感器是在背面照射方向。
16.根据权利要求1所述的微电子芯片,其是可安装在内视镜的上操作,以提供影像的用。
17.根据权利要求1所述的微电子芯片,其是安装在相机的上,以提供影像的用。
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- 2014-07-08 CN CN201410324030.8A patent/CN104284110A/zh active Pending
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CN104970756B (zh) | 2017-07-21 |
US9538909B2 (en) | 2017-01-10 |
TWI573554B (zh) | 2017-03-11 |
HK1210000A1 (zh) | 2016-04-15 |
US20150018611A1 (en) | 2015-01-15 |
TW201513824A (zh) | 2015-04-16 |
CN104970756A (zh) | 2015-10-14 |
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