CN104241427B - High heat radiation solar module - Google Patents

High heat radiation solar module Download PDF

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Publication number
CN104241427B
CN104241427B CN201410458852.5A CN201410458852A CN104241427B CN 104241427 B CN104241427 B CN 104241427B CN 201410458852 A CN201410458852 A CN 201410458852A CN 104241427 B CN104241427 B CN 104241427B
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China
Prior art keywords
layer
solar module
heat radiation
light
high heat
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Expired - Fee Related
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CN201410458852.5A
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CN104241427A (en
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杨小旭
刘国钧
沈晓东
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JIANGSU GORICHEN NEW MATERIALS CO Ltd
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JIANGSU GORICHEN NEW MATERIALS CO Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of high heat radiation solar module, it is characterized in that, front panel material layer (1) that it includes being cascading from top to bottom, upper strata encapsulating material layer (2), cell piece (3), doped with 10% 30% weight portions conductive particle lower floor's encapsulating material layer (4) and doped with the back plate glassy layer (5) of 1% 10% weight portion conductive particle.The present invention one is to reduce the generation source of heat, two is can be by the most the distributing of the heat produced during component operation, thus overcoming deficiency of the prior art, solar module of the present invention is without changing the packaging technology of existing product, it is easy to implement.

Description

High heat radiation solar module
Technical field
The invention belongs to field of photovoltaic technology, be specifically related to the solar module of a kind of heat dissipation type high
Background technology
Along with the development of human civilization, the whole world faces the problems such as serious energy crisis and environmental pollution.Wherein, Solar energy can be translates directly into the photovoltaic solar cell of electric energy as solving worldwide energy crisis and fall One of important method that low environment pollutes.The module that solaode is constituted is exposed to the sun the most in the sun, in order to Avoid shining upon the temperature affecting battery module, and then affect the generating efficiency of battery module, the most especially Require that solar-electricity assembly has good heat dispersion.
Data is had to show, same photovoltaic module power station, the spring that, light application time weak in intensity of illumination is short Autumn and intensity of illumination are strong, the summer of light application time length, and its gross generation, almost without increase, has subtracted Few, therefore research worker expands investigation, is finally the discovery that the persistent fever of photovoltaic module have impact on power Output, i other words increase light intensity and prolonging light time, from theory, can improve generating Efficiency and increase generated energy, but the assembly fever phenomenon therefore brought then can play great retroaction.Statistics Data show, when the operating temperature of assembly is more than 60 DEG C, often improve 10 DEG C, by strong influence cell piece Generating efficiency and electricity output.
At present, following structure all taked by solar energy single crystal or polycrystalline assembly on market, depends on the most from top to bottom Secondary stacking arranges safety glass layer, EVA layer, cell piece, EVA layer, TPT layer and aluminum alloy frame.This The front glass sheet of the structure of sample and encapsulating material many concerns light penetration, typically require more than 91%, so As far as possible can absorb photon so that cell piece has higher conversion efficiency and electric power output more.Notacoria mostly is Fluorine-containing polymer composite (heat conductivity is only 0.1-0.2W/m.K), play block water, insulation etc. is protected Protect effect, but bring the problem that heat radiation is difficult simultaneously.
Summary of the invention
It is an object of the invention to provide a kind of high heat radiation solar module, one can reduce heat Generation source, two is by the most the distributing of the heat produced during component operation, thus to overcome existing Deficiency in technology, solar module of the present invention is without changing the packaging technology of existing product, easily In enforcement.
For achieving the above object, present invention employs following technical scheme:
A kind of high heat radiation solar module, it is characterised in that it includes being cascading from top to bottom Front panel material layer, upper strata encapsulating material layer, cell piece, conductive particle doped with 10%-30% weight portion Lower floor's encapsulating material layer and the back plate glassy layer doped with 1%-10% weight portion conductive particle;
Wherein, described front panel material layer includes that the sealer being cascading from top to bottom, light subtract Anti-layer and the high light-passing plastic basic unit doped with quantum dot, described sealer is transparent polyvinylidene fluoride Plastic layer, light refractive index is 1.38;Described light anti-reflection layer is transparent polyvinylidene fluoride and acrylate The plastic layer of class plastic blend, light refractive index is 1.40~1.49;
That described quantum dot is made up of semi-conducting material, a diameter of 2~the nanoparticle of 20nm, doping is The weight portion of 0.1%-2%.
Quantum dot is generally spherical or class is spherical, be by semi-conducting material (generally by II B~VI B or IIIB~ VB is elementary composition) make, stable diameter 2~20nm nanoparticle.Quantum dot is at nanoscale On atom and the aggregation of molecule, both can be made up of a kind of semi-conducting material, as by II.VI race element (as CdS, CdSe, CdTe, ZnSe etc.) or III.V race element (such as InP, InAs etc.) composition, it is also possible to by Two or more semi-conducting material composition.
The operation principle of solar battery sheet is to absorb photon, produces excited state thus produces electric current, and the sun Either long wave or shortwave in optical band, can only produce a photon after being absorbed by cell piece, and residual energy Amount can only be converted into heat energy.Quantum dot effect is exactly by the high-energy light in short-wave band light source (300-500nm) Son absorbs and is converted to 2 energy photons, the most not only can improve photoelectric transformation efficiency, and decrease thermal source Produce, thus reduce cell piece self-heating.
Preferably, the thickness of described sealer is 10~50 μm;The thickness of described light anti-reflection layer is 10~50 μm;The thickness of described high light-passing plastic basic unit is 1~5mm.
Preferably, high light-passing plastic basic unit be refractive index be 1.49 PMMA layer or refractive index be the PC of 1.59 Layer or refractive index are the pet layer of 1.57.
Preferably, described semi-conducting material is elementary composition by II B~VI B or IIIB~VB;Described quantum dot It is made up of a kind or more than a kind semi-conducting material.
Preferably, described upper strata encapsulating material layer and lower floor's encapsulating material layer are EVA, PVB, ionomer Form etc. TPO PUR or silica gel.
Preferably, described conductive particle is graphite, metal-oxide, calcium oxide, nano-calcium carbonate, sulphuric acid Barium, silicon carbide ceramics or aluminium silicon carbide;Described metal-oxide is titanium oxide, silicon oxide, aluminium oxide, oxygen Change magnesium or zinc oxide.
Preferably, the double-sided glass of described back plate glassy layer is embossed with has spherical or polygonal surface topography, The rear surface evaporation of described glass or sputter have heat dissipating layer, described heat dissipating layer to be metal level or metal compound layer Or graphite linings.
Preferably, described battery component edge is provided with crashproof plastic frame, is provided with close in described plastic frame Seal strip.
Beneficial effect:
The various material of solar module of the present invention all considers enhancing heat conduction function, and overall structure is complete Entirely it is different from conventional photovoltaic modular construction, compared with prior art, the invention have the advantages that
(1) front panel material layer has light anti-reflective effect, adds the light that cell piece absorbs;With the addition of Quantum dot, absorbs and converted short-wave band light, it is to avoid the dump energy after short-wave band high-energy photons absorbs turns It is changed to heat;Front plane surface employs transparent fluoroplastics, surface energy low (26-28 dyne), has and does not adhere to Performance, can be the most self-cleaning, keeps the good light penetration under assembly header board duty out of doors;Header board All use macromolecular material, light quality;
(2) lower floor's encapsulating material adds heat transfer particle, is effectively spread out of from the back side by the heat that cell piece produces;
(3) glass exceeds a few number as back-protective material, heat transfer coefficient compared with conventional polymer material backboard Magnitude, internal doping conductive particle, more strengthen conductive force;Embossed surface increasing heat radiation area;After glass Surface increases heat dissipating layer, higher with the back surface layer heat conductivity of air contact, is more beneficial for the heat of assembly Distribute.
Accompanying drawing explanation
Fig. 1 is the structural representation of high heat radiation solar module of the present invention;
Fig. 2 is the structural representation of described front panel material layer;
Wherein, 1, front panel material layer, 2, upper strata encapsulating material layer, 3, cell piece, 4, lower floor's encapsulation material The bed of material, 5, back plate glassy layer, 6, plastic frame, 11, sealer, 12, light anti-reflection layer, 13, High light-passing plastic basic unit.
Detailed description of the invention
Technical scheme is further described by following example.
Embodiment 1:
As shown in Fig. 1~Fig. 2, a kind of high heat radiation solar module, it includes stacking gradually from top to bottom Arrange front panel material layer 1, upper strata encapsulating material layer 2, cell piece 3, doped with 10%-30% weight portion Lower floor's encapsulating material layer 4 of conductive particle and the back plate glassy layer doped with 1%-10% weight portion conductive particle 5;
Wherein, described front panel material layer 1 includes sealer 11, the light being cascading from top to bottom Line anti-reflection layer 12 and the high light-passing plastic basic unit 13 doped with quantum dot, described sealer 11 is transparent Polyvinylidene fluoride plastic layer, light refractive index is 1.38;Described light anti-reflection layer 12 is transparent poly-inclined difluoro The plastic layer that ethylene is blended with acrylic plastics, light refractive index is 1.40~1.49;
That described quantum dot is made up of semi-conducting material, a diameter of 2~the nanoparticle of 20nm, doping is The weight portion of 0.1%-2%.
Quantum dot is generally spherical or class is spherical, be by semi-conducting material (generally by II B~VI B or IIIB~ VB is elementary composition) make, stable diameter 2~20nm nanoparticle.Quantum dot is at nanoscale On atom and the aggregation of molecule, both can be made up of a kind of semi-conducting material, as by II.VI race element (as CdS, CdSe, CdTe, ZnSe etc.) or III.V race element (such as InP, InAs etc.) composition, it is also possible to by Two or more semi-conducting material composition.
Preferably, high light-passing plastic basic unit 13 is 1.59 for PMMA layer or the refractive index that refractive index is 1.49 PC layer or refractive index be the pet layer of 1.57.
Preferably, described upper strata encapsulating material layer 2 and lower floor's encapsulating material layer 4 be EVA, PVB, ion poly- The TPO PURs such as compound or silica gel composition.
Preferably, described conductive particle is graphite, metal-oxide, calcium oxide, nano-calcium carbonate, sulphuric acid Barium, silicon carbide ceramics or aluminium silicon carbide;Described metal-oxide is titanium oxide, silicon oxide, aluminium oxide, oxygen Change magnesium or zinc oxide.
Preferably, the double-sided glass of described back plate glassy layer 5 is embossed with and has spherical or polygonal surface shape Looks, the rear surface evaporation of described glass or sputter have heat dissipating layer, described heat dissipating layer to be metal level or metal compound Nitride layer or graphite linings.
Preferably, described battery component edge is provided with crashproof plastic frame 6, is provided with close in described plastic frame Seal strip.
Aforesaid " high printing opacity " refer to light transmittance more than 94%, reflecting rate is more than 90%.
It is pointed out that as described above is only in order to explain the preferred embodiments of the invention, be not intended to According to this present invention is made any restriction in form, therefore all have made under identical spirit relevant Any modification of the present invention or change, all must be included in the category that the invention is intended to protection.

Claims (8)

1. one kind high heat radiation solar module, it is characterised in that it includes stacking gradually from top to bottom setting The front panel material layer (1) put, upper strata encapsulating material layer (2), cell piece (3), doped with 10%-30% weight Lower floor's encapsulating material layer (4) of conductive particle of part and the back plate doped with 1%-10% weight portion conductive particle Glassy layer (5);
Sealer (11) that wherein, described front panel material layer (1) includes being cascading from top to bottom, Light anti-reflection layer (12) and the high light-passing plastic basic unit (13) doped with quantum dot, described sealer (11) For transparent polyvinylidene fluoride plastic layer, light refractive index is 1.38;Described light anti-reflection layer (12) is The plastic layer that bright polyvinylidene fluoride is blended with acrylic plastics, light refractive index is 1.40~1.49;
That described quantum dot is made up of semi-conducting material, a diameter of 2~the nanoparticle of 20nm, doping is The weight portion of 0.1%-2%;
The high printing opacity of described high light-passing plastic basic unit (13) refer to light transmittance more than 94%, reflecting rate is 90% Above.
High heat radiation solar module the most according to claim 1, it is characterised in that described surface The thickness of protective layer (11) is 10~50 μm;The thickness of described light anti-reflection layer (12) is 10~50 μm; The thickness of described high light-passing plastic basic unit (13) is 1~5mm.
High heat radiation solar module the most according to claim 1, it is characterised in that high printing opacity is moulded Material basic unit (13) be refractive index be PMMA layer or PC layer that refractive index is 1.59 or the refractive index of 1.49 It it is the pet layer of 1.57.
High heat radiation solar module the most according to claim 1, it is characterised in that described partly lead Body material is elementary composition by IIB~VI B or IIIB~VB;Described quantum dot is led with upper half by a kind or a kind Body material is made.
High heat radiation solar module the most according to claim 1, it is characterised in that described upper strata Encapsulating material layer (2) and lower floor's encapsulating material layer (4) are EVA, PVB, ionomer TPO heat Melten gel or silica gel composition.
High heat radiation solar module the most according to claim 1, it is characterised in that described heat conduction Particle is graphite, metal-oxide, nano-calcium carbonate, barium sulfate, silicon carbide ceramics or aluminium silicon carbide;Institute Stating metal-oxide is titanium oxide, silicon oxide, aluminium oxide, magnesium oxide or zinc oxide.
High heat radiation solar module the most according to claim 1, it is characterised in that described back plate Glassy layer (5) thickness is 1-5 millimeter, and the double-sided glass of described back plate glassy layer (5) is embossed with has ball Shape or polygonal surface topography, the rear surface evaporation of described glass or sputter have heat dissipating layer, described heat dissipating layer For metal level or metal compound layer or graphite linings.
High heat radiation solar module the most according to claim 1, it is characterised in that described battery Module edge is provided with crashproof plastic frame (6), is provided with sealing joint strip in described plastic frame.
CN201410458852.5A 2014-09-10 2014-09-10 High heat radiation solar module Expired - Fee Related CN104241427B (en)

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* Cited by examiner, † Cited by third party
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KR101981331B1 (en) * 2017-03-30 2019-05-22 에스케이씨에코솔루션즈(주) Encapsulant for solar cells and solar cell module comprising the same
CN107819050A (en) * 2017-11-10 2018-03-20 扬州鑫晶光伏科技有限公司 A kind of solar cell heat sinking back-plate structure and its processing technology
CN107819043B (en) * 2017-11-10 2023-12-19 北京华阳风科技有限公司 Solar photovoltaic cell assembly

Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101787271A (en) * 2009-01-23 2010-07-28 E.I.内穆尔杜邦公司 Quantum dot optical wavelength converting layer for solar cell
CN102064226A (en) * 2009-11-02 2011-05-18 惠和株式会社 Heat dissipation sheet for the back face of solar battery module, and solar battery module using the same
CN102945881A (en) * 2012-12-10 2013-02-27 江苏金瑞晨新材料有限公司 Light-weight high-efficiency photovoltaic assembly
CN204102919U (en) * 2014-09-10 2015-01-14 江苏金瑞晨新材料有限公司 High heat radiation solar module

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004806A (en) * 2011-06-17 2013-01-07 Dexerials Corp Solar cell module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101787271A (en) * 2009-01-23 2010-07-28 E.I.内穆尔杜邦公司 Quantum dot optical wavelength converting layer for solar cell
CN102064226A (en) * 2009-11-02 2011-05-18 惠和株式会社 Heat dissipation sheet for the back face of solar battery module, and solar battery module using the same
CN102945881A (en) * 2012-12-10 2013-02-27 江苏金瑞晨新材料有限公司 Light-weight high-efficiency photovoltaic assembly
CN204102919U (en) * 2014-09-10 2015-01-14 江苏金瑞晨新材料有限公司 High heat radiation solar module

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