CN102456762B - Crystalline silicon solar battery and amorphous silicon solar battery - Google Patents
Crystalline silicon solar battery and amorphous silicon solar battery Download PDFInfo
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- CN102456762B CN102456762B CN201010521525.1A CN201010521525A CN102456762B CN 102456762 B CN102456762 B CN 102456762B CN 201010521525 A CN201010521525 A CN 201010521525A CN 102456762 B CN102456762 B CN 102456762B
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Abstract
The invention discloses a crystalline silicon solar battery and an amorphous silicon solar battery. The crystalline silicon solar battery comprises an antireflective film layer, a light-transmitting glass layer, a second sealing layer, a crystalline silicon battery piece, a first sealing layer and a TPT backboard which are sequentially combined, wherein the antireflective film layer, the light-transmitting glass layer, the first sealing layer and/or the second sealing layer respectively contain illuminant. The amorphous silicon solar battery comprises an antireflective film layer, a light-transmitting glass layer, a transparent conductive film, an amorphous silicon pin film layer and a metal back electrode, wherein the antireflective film layer, the light-transmitting glass layer and/or the transparent conductive film respectively contain illuminant. According to the solar batteries disclosed by the invention, sunlight can be subjected to spectrum down-conversion, spectrum up-conversion and/or spectrum transfer; and ultraviolet light and near-infrared light in the sunlight can be converted into visible light, so that the utilization ratio of the sunlight is effectively improved, the conversion efficiency is effectively promoted, and the generated energy is effectively increased.
Description
Technical field
The invention belongs to technical field of solar batteries, relate to a kind of crystal silicon solar energy battery and a kind of non-crystal silicon solar cell specifically.
Background technology
Energy problem has become the significant problem that the world today pays special attention to, and national governments are all greatly developing regenerative resource, and solar energy is as the representative of regenerative resource, inexhaustible, nexhaustible, is the most effective cleaning energy.The radiation that earth surface every square metre is subject to every year on average can generate electricity 1700kW.h, and the solar radiation namely accepted can meet 10,000 times of global energy requirements, or the every solar radiation be subject to for 1 hour in earth's surface can meet the whole world energy demand of 1 year.International Energy Agency data show, and solar energy photovoltaic system is installed in the desert in the whole world 4%, is just enough to meet global energy requirements.Photovoltaic enjoys wide development space (roof, building sides, vacant lot and desert etc.), and its potentiality are very huge, are that the ratio of regenerative resource in energy resource structure of representative will progressively improve with solar energy.
But the cost of current photovoltaic generation is still higher, one of them important reason is the conversion efficiency not high (, at 15%-18%, amorphous silicon membrane is at 5-10% for monocrystalline silicon and polysilicon) due to solar cell.So various countries scientist is being devoted to the conversion efficiency improving all kinds of battery.But the scope that all kinds of solar cell responds solar spectrum is more limited, if amorphous silicon film battery is at 380-780nm, peak value is about 600nm; Crystal silicon cell is at 380-1200nm, and peak value is about 900nm.The spectral response range that solar cell is limited and distinctive spectral losses can reduce its conversion efficiency greatly.For the unijunction monocrystalline silicon battery of energy gap Eg=1.1ev, only have wavelength be less than 1200nm (photon energy is greater than 1.1ev) sunlight could absorb by single-crystal semiconductor material and realize opto-electronic conversion, the infrared light that wavelength is greater than 1200nm then can not be absorbed by battery; The ultraviolet light that wavelength is less than 380nm generates electricity owing to being absorbed to be utilized by battery by seal, sealing materials such as EVA; In addition, can be used within the scope of the 380-1200nm sunlight generated electricity, all photon energies all neither be converted to electricity, wherein some discharges in the form of heat.So these spectral losses cause the theoretical maximum conversion efficiency of the unijunction monocrystalline silicon battery of energy gap Eg=1.1ev to be about 31%.
Therefore, the photoelectric conversion efficiency how improving solar cell becomes a hot in area of solar cell.
Summary of the invention
The object of the invention is to the above-mentioned deficiency overcoming prior art, a kind of crystal silicon solar energy battery and a kind of non-crystal silicon solar cell are provided, this crystal silicon solar energy battery and non-crystal silicon solar cell effectively can improve the utilance of battery to sunlight, promote battery conversion efficiency, increase cell power generation amount.
In order to realize foregoing invention object, technical scheme of the present invention is as follows:
A kind of crystal silicon solar energy battery, comprise the antireflection film layer, translucent glass layer, the second sealing layer, crystalline silicon battery plate, the first sealing layer and the polyvinyl fluoride composite membrane backboard that combine successively, described antireflection film layer, translucent glass layer, the first sealing layer, the second sealing layer at least in one deck containing luminous element.
And, a kind of non-crystal silicon solar cell, comprise the antireflection film layer, translucent glass layer, transparent conductive film layer, amorphous silicon pin rete and the metal back electrode that combine successively, described antireflection film layer, translucent glass layer, transparent conductive film layer at least in one deck containing luminous element.
Crystal silicon solar energy battery of the present invention utilizes antireflection film layer, translucent glass layer, first sealing layer, second sealing layer at least utilizes antireflection film layer containing luminous element and non-crystal silicon solar cell in one deck, translucent glass layer, transparent conductive film layer at least in one deck containing luminous element, change under sunlight is carried out spectrum, upper conversion and the transfer of/spectrum, thus the corresponding visible ray ultraviolet light of the high-energy photons in sunlight being converted to energy photons, the near infrared light of energy photons converts high-octane visible ray to, thus converted to electric energy by this crystal silicon solar energy battery and non-crystal silicon solar cell utilization, this crystal silicon solar energy battery and the utilance of non-crystal silicon solar cell to sunlight is made to be able to effective raising, conversion efficiency is able to effective lifting, energy output is able to effective increase.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of crystal silicon solar energy battery of the embodiment of the present invention;
Fig. 2 is the another kind of structural representation of crystal silicon solar energy battery of the embodiment of the present invention;
Fig. 3 is the non-crystal silicon solar cell structural representation of the embodiment of the present invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The general principle that the embodiment of the present invention improves solar cell photoelectric conversion efficiency be based on: because existing solar cell effectively can not absorb ultraviolet light and 1200-2000nm near infrared light, and convert thereof into electric energy.Therefore, the embodiment of the present invention makes every effort to change existing solar cell, and this is not enough, utilize and the utilance of solar cell to sunlight is improved to modes such as conversion under sunlight spectrum, Upconversion, luminescent spectrum transfers, promote battery conversion efficiency, increase cell power generation amount.Wherein, under spectrum, conversion refers to that shortwave ultraviolet or wavelength being less than 500nm converts long wave to, is generally convert a high-energy photons to two low-energy photons; Upconversion refers to and converts 1200-2000nm near-infrared to visible ray, is generally be a high-octane photon by two or more low-energy converting photons; Luminescent spectrum transfer refers to that luminous element is launched after absorbing again, and is transferred to by inner full-reflection on the battery of edge placement.
The embodiment of the present invention provides according to above-mentioned principle the crystal silicon solar energy battery that a kind of utilance to sunlight is able to effective raising, conversion efficiency is able to effective lifting, energy output is able to effective increase.As shown in Figure 1, this crystal silicon solar energy battery comprises the antireflection film layer 11, translucent glass layer 12, second sealing layer 13, crystalline silicon battery plate 14, first sealing layer 15 and polyvinyl fluoride composite membrane (TPT) backboard 16 that combine successively.Wherein, antireflection film layer 11, translucent glass layer 12, first sealing layer 15, second sealing layer 13 at least in one deck containing luminous element.Like this, this crystal silicon solar energy battery utilizes antireflection film layer 11, translucent glass layer 12, first sealing layer 15, the luminous element that second sealing layer 13 at least contains in one deck, change under sunlight is carried out spectrum, upper conversion and/or spectrum transfer, thus the corresponding visible ray ultraviolet light of the high-energy photons in sunlight being converted to energy photons, the near infrared light of energy photons converts high-octane visible ray to, thus converted to electric energy by this crystal silicon solar energy battery, the utilance of this crystal silicon solar energy battery to sunlight is made to be able to effective raising, conversion efficiency is able to effective lifting, energy output is able to effective increase.
Particularly, above-mentioned luminous element is preferably one or more in quantum dot, organic luminescent dyes, rare earth ion.Wherein, quantum dot is preferably at least one in semiconductor crystalline material CdS, InAs of nano-scale, and the semiconductor crystalline material as nano-scale can be cadmium sulfide (CdS); Organic luminescent dyes is preferably at least one in Lumogen-F570, Lumogen-F083, Lumogen-F240, Lumogen-F300; Rare earth ion is preferably at least one in Ce ion, Sm ion, Eu ion, Tb ion, Dy ion, Yb ion, Er ion.This Quantum dots CdS, organic luminescent dyes and Ce, Sm, Eu, Tb, Dy rare earth ion effectively can absorb the ultraviolet light in sunlight, and switching emission under the ultraviolet light of absorption is gone out visible ray; Yb and Er rare earth ion effectively can absorb the infrared light in sunlight, and the infrared light Up-conversion emission of absorption is gone out visible ray, thus improves battery to the utilance of sunlight.
The content of above-mentioned luminous element in antireflection film layer 11, translucent glass layer 12, first sealing layer 15 or the second sealing layer 13 is preferably 0.5% ~ 5%.When antireflection film layer 11 is containing above-mentioned luminous element, the content of luminous element in antireflection film layer 11 is preferably 0.5% ~ 2%; When translucent glass layer 12 is containing luminous element, the content of luminous element in translucent glass layer 12 is preferably 0.5% ~ 2%; When the first sealing layer 15 and/or the second sealing layer 13 are containing luminous element, the content of luminous element in the first sealing layer 15 and/or the second sealing layer 13 is preferably 0.5% ~ 2%.The luminous physical efficiency of this content preferable range improves the present embodiment crystal silicon solar energy battery further to the utilance of sunlight, conversion efficiency and energy output.
Particularly, the thickness of the antireflection film layer 11 of this crystal silicon solar energy battery is preferably 100nm ~ 200nm, its material is preferably at least one in titanium dioxide and silicon dioxide, this antireflection film layer 11 adopts sol-gel, spraying or magnetron sputtering to be combined with translucent glass layer 12, the existence of this antireflection film layer 11 not only can reduce the light reflectivity of glass surface, and then provides transmitance; But also by translation function under the spectrum of the luminous element such as quantum dot or rare earth ion that mixes, ultraviolet light can be converted to visible ray, to increase cell power generation amount.The thickness of translucent glass layer 12 is preferably 3.2mm ~ 4mm, its material is preferably very white rolled glass, the amount of the luminous element contained in this translucent glass layer 12 and kind can be regulated to regulate conversion to sunlight, the content of this luminous element in translucent glass layer 12 to be realized by the formula of adjustment translucent glass layer 12 when preparing this translucent glass layer 12.The thickness of the first sealing layer 15 and the second sealing layer 13 is preferably 0.38mm ~ 0.76mm, its material is preferably at least one in poly-vinegar ethyl ester (EVA), polyvinyl butyral resin (PVB), certainly this two kinds of materials are not limited to, the available material that other can realize its phase same-action substitutes, translucent glass layer 12 and crystalline silicon battery plate 14 are bonded as one by the second sealing layer 13, and crystalline silicon battery plate 14 and TPT backboard 16 are bonded as one by the first sealing layer 15.Crystalline silicon battery plate 14 adopts the art existing.
Particularly, above-mentioned crystalline silicon battery plate 14 is single layer crystal silicon cell.
Or above-mentioned crystalline silicon battery plate 14 is bimorph crystal silicon cell, between bimorph crystal silicon cell with the first sealing layer 15, be also provided with the up-conversion luminescence rete 17, the specular layer 18 that are combined successively.Up-conversion luminescence rete 17, containing luminous element, should contain the crystal silicon solar energy battery structural representation of bimorph crystal silicon cell as shown in Figure 2.The wherein one side of this bimorph crystal silicon cell can convert the sunlight absorbed to electric energy, the near infrared light be not absorbed and used arrives up-conversion luminescence rete 17 through bimorph crystal silicon cell, and the luminous element in up-conversion luminescence rete 17 converts visible ray on being carried out by near infrared light, the another side of the two-sided crystal silicon cell of visible ray part directive after up-conversion luminescence rete 17 is changed, another part directive specular layer 18, by the reflex of specular layer 18, make the another side of the visible ray directive bimorph crystal silicon cell after conversion and absorbed, thus convert electric energy to, further increase the utilance of the present embodiment solar cell to sunlight, improve battery conversion efficiency, add cell power generation amount.
Further, the thickness of up-conversion luminescence rete 17 containing luminous element is preferably 50 ~ 100nm, and its material is preferably the NaYF that Er and Yb mixes altogether
4microcrystal, this up-conversion luminescence rete 17 is combined with two-sided crystalline silicon battery plate by the mode of spraying or thermal evaporation, plates specular layer 18 by the mode such as thermal evaporation or sputtering.
The embodiment of the present invention also provides according to above-mentioned principle the non-crystal silicon solar cell that a kind of utilance to sunlight is able to effective raising, conversion efficiency is able to effective lifting, energy output is able to effective increase.As shown in Figure 3, this non-crystal silicon solar cell comprises the antireflection film layer 21, translucent glass layer 22, transparent conductive film layer 23, amorphous silicon pin rete 24 and the metal back electrode 25 that combine successively.Wherein, antireflection film layer 21, translucent glass layer 22 and/or transparent conductive film layer 23 is containing luminous element.Like this, this non-crystal silicon solar cell utilizes antireflection film layer 21, the luminous element that translucent glass layer 22 and/or transparent conductive film layer 23 contain, change under sunlight is carried out spectrum, upper conversion and the transfer of/spectrum, thus the corresponding visible ray ultraviolet light of the high-energy photons in sunlight being converted to energy photons, the near infrared light of energy photons converts high-octane visible ray to, again converted to electric energy by this non-crystal silicon solar cell, the utilance of this non-crystal silicon solar cell to sunlight is made to be able to effective raising, conversion efficiency is able to effective lifting, energy output is able to effective increase.
Particularly, the material kind of above-mentioned luminous element, the content in corresponding Rotating fields and effect are as luminous element in above-mentioned crystal silicon solar energy battery; Antireflection film layer 21, translucent glass layer 22 thickness, content and effect, as the antireflection film layer 11 in above-mentioned crystal silicon solar energy battery, translucent glass layer 12, in order to save length, do not repeat them here yet.The thickness of transparent conductive film layer 23 is preferably 600 ~ 1000nm, and its material is preferably at least one in FTO or AZO.The thickness of transparent conductive film layer 23, amorphous silicon pin rete 24 and metal back electrode 25, material and technique adopt the art existing.
Now in conjunction with instantiation, the present invention is further elaborated.
Embodiment 1
The crystal silicon solar energy battery structure of the present embodiment as shown in Figure 1, comprises the antireflection film layer 11, very white rolled glass layer 12, second sealing layer 13, crystalline silicon battery plate 14, first sealing layer 15 and the TPT backboard 16 that combine successively.The CeO of 0.5wt% is also had at very white rolled glass layer 12
2with the Sm of 1wt%
2o
3the luminous element of rare earth oxide.Wherein, antireflection film layer 11 thickness is 100nm, and material is silicon dioxide; Very white rolled glass layer 12 thickness is 3.2mm; Second sealing layer 13 thickness is 0.38mm, and material is EVA; First sealing layer 15 thickness is 0.38mm, and material is EVA.
The crystal silicon solar energy battery of the present embodiment 1 utilizes Ce and Sm Ions Absorption ultraviolet light and lower switching emission goes out visible ray, such script is partly converted to visible ray by the ultraviolet light that the seal, sealing materials such as EVA 13 sponge, absorbed by crystalline silicon battery plate 14 through after the seal, sealing materials such as EVA 13, improve battery conversion efficiency 1.5%.
Embodiment 2
The crystal silicon solar energy battery structure of the present embodiment as shown in Figure 1, comprises the antireflection film layer 11, very white rolled glass layer 12, second sealing layer 13, crystalline silicon battery plate 14, first sealing layer 15 and the TPT backboard 16 that combine successively.Doped with the luminous element of organic luminescent dyes Lumogen-F 570 in the second sealing layer 13, account for 2% of the second sealing layer 13 volume.Wherein, antireflection film layer 11 thickness is 100nm, and material is silicon dioxide; Very white rolled glass layer 12 thickness is 3.2mm; Second sealing layer 13 thickness is 0.38mm, and material is EVA; First sealing layer 15 thickness is 0.38mm, and material is EVA.
Organic luminescent dyes Lumogen-F 570 is mixed in second sealing layer 13 of the crystal silicon solar energy battery of the present embodiment 2, it absorbs ultraviolet light and lower switching emission goes out visible ray, such script is converted to visible ray by the ultraviolet light that the EVA material of the second sealing layer 13 sponges by major part, absorbed by crystalline silicon battery plate 14 again, improve battery conversion efficiency 1%.
Embodiment 3
The crystal silicon solar energy battery structure of the present embodiment as shown in Figure 2, comprises the antireflection film layer 11, very white rolled glass layer 12, second sealing layer 13, two-sided crystalline silicon battery plate 14, up-conversion luminescence rete 17, specular layer 18, first sealing layer 15 and the TPT backboard 16 that combine successively.The rare earth Eu ionoluminescence body of 1% is mixed in antireflection film layer 11.Wherein, antireflection film layer 21 thickness is 100nm, and material is silica membrane; At the NaYF that up-conversion luminescence rete 17 is doped with 1%Er and 1%Yb rare earth oxide
4microcrystal, up-conversion luminescence rete 17 thickness is 100nm; Specular layer 18 thickness is 20nm, and material is aluminium film; All the other materials are the same.
The two-sided crystal silicon solar energy battery of the present embodiment 3, one is the lower conversion luminescence characteristic of the rare earth ion Eu utilized in antireflection film layer 11, and ultraviolet light is converted to visible ray; Two is utilize in up-conversion luminescence rete 17 to mix Er and Yb ion, it absorbs the near infrared light through cell piece and goes out visible ray by Up-conversion emission, then by injecting specular layer 18 after this up-conversion luminescence rete 17, the surface reaching two-sided crystalline silicon battery plate 14 after the visible reflectance launched is absorbed and used.The ultraviolet light that such script does not generate electricity and near infrared light can partly be utilized, and improve battery conversion efficiency 2%.
Embodiment 4
As shown in Figure 3, this non-crystal silicon solar cell comprises the antireflection film layer 21, translucent glass layer 22, transparent conductive film layer 23, amorphous silicon pin rete 24 and the metal back electrode 25 that combine successively to the non-crystal silicon solar cell structure of the present embodiment.The rare earth Eu ionoluminescence body of 0.5% is mixed in antireflection film layer 21.Wherein, antireflection film layer 21 thickness is 100nm, and material is silica membrane; Translucent glass layer 22 thickness is 3.2mm, and material is ultra-white float glass; Transparent conductive film layer 23 thickness is 800nm, and material is AZO film; Metal back electrode 25 thickness is 20nm, and material is aluminium film.
Rare earth Eu ionoluminescence body is mixed with in the antireflection film layer 21 of the non-crystal silicon solar cell of the present embodiment 4, it absorbs ultraviolet light and lower switching emission goes out visible ray, amorphous silicon pin rete 24 is arrived through translucent glass layer 22, transparent conductive film layer 23, and absorbed by amorphous silicon pin rete 24, to improve the response of battery to ultraviolet light, and then promote battery conversion efficiency 1.2%.
Embodiment 5
As shown in Figure 3, this non-crystal silicon solar cell comprises the antireflection film layer 21, translucent glass layer 22, transparent conductive film layer 23, amorphous silicon pin rete 24 and the metal back electrode 25 that combine successively to the non-crystal silicon solar cell structure of the present embodiment.1wt% rare earth Eu ionoluminescence body is mixed in transparent conductive film layer 23.Wherein, antireflection film layer 21 thickness is 100nm, and material is silica membrane; Translucent glass layer 22 thickness is 4mm, and material is ultra-white float glass; Transparent conductive film layer 23 thickness is 800nm, and material is AZO film; Metal back electrode 25 thickness is 20nm, and material is aluminium film.
Rare earth Eu ionoluminescence body is mixed with in the transparent conductive film layer 23 of the non-crystal silicon solar cell of the present embodiment 5, it absorbs ultraviolet light and lower switching emission goes out visible ray, arrive amorphous silicon pin rete 24, and absorbed by amorphous silicon pin rete 24, to improve the response of battery to ultraviolet light, and then promote battery conversion efficiency 1%.
Embodiment 6
As shown in Figure 3, this non-crystal silicon solar cell comprises the antireflection film layer 21, translucent glass layer 22, transparent conductive film layer 23, amorphous silicon pin rete 24 and the metal back electrode 25 that combine successively to the non-crystal silicon solar cell structure of the present embodiment.1wt% rare earth Tb ionoluminescence body is mixed in translucent glass layer 22.Wherein, antireflection film layer 21 thickness is 100nm, and material is silica membrane; Translucent glass layer 22 thickness is 3.2mm, and material is ultra-white float glass; Transparent conductive film layer 23 thickness is 750nm, and material is FTO film; Metal back electrode 25 thickness is 20nm, and material is aluminium film.
Rare earth Tb ionoluminescence body is mixed with in the translucent glass layer 22 of the non-crystal silicon solar cell of the present embodiment 6, it absorbs ultraviolet light and lower switching emission goes out visible ray, arrive amorphous silicon pin rete 24, and absorbed by amorphous silicon pin rete 24, to improve the response of battery to ultraviolet light, and then promote battery conversion efficiency 1.2%.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a crystal silicon solar energy battery, it is characterized in that, comprise the antireflection film layer, translucent glass layer, the second sealing layer, crystalline silicon battery plate, the first sealing layer and the polyvinyl fluoride composite membrane backboard that combine successively, the rare earth Eu ionoluminescence body of 1% is mixed in described antireflection film layer, and its thickness is 100nm, material is silica membrane; First sealing layer is up-conversion luminescence rete, and it is doped with the NaYF of 1%Er and 1%Yb rare earth oxide
4microcrystal, described up-conversion luminescence thicknesses of layers is 100nm.
2. crystal silicon solar energy battery according to claim 1, is characterized in that: described crystalline silicon battery plate is single layer crystal silicon cell.
3. crystal silicon solar energy battery according to claim 1, it is characterized in that: described crystalline silicon battery plate is bimorph crystal silicon cell, described bimorph crystal silicon cell is also provided with the up-conversion luminescence rete, the specular layer that are combined successively between the first sealing layer, described up-conversion luminescence rete is between bimorph crystal silicon cell and specular layer, and described specular layer is between up-conversion luminescence rete and the first sealing layer; Described up-conversion luminescence rete contains luminous element.
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| CN102456762A (en) | 2012-05-16 |
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