CN104241231A - 芯片封装基板及其制作方法 - Google Patents
芯片封装基板及其制作方法 Download PDFInfo
- Publication number
- CN104241231A CN104241231A CN201310230281.5A CN201310230281A CN104241231A CN 104241231 A CN104241231 A CN 104241231A CN 201310230281 A CN201310230281 A CN 201310230281A CN 104241231 A CN104241231 A CN 104241231A
- Authority
- CN
- China
- Prior art keywords
- layer
- projection
- base portion
- photoresist layer
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052802 copper Inorganic materials 0.000 claims abstract description 58
- 239000010949 copper Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 36
- 229920002120 photoresistant polymer Polymers 0.000 claims description 101
- 239000011889 copper foil Substances 0.000 claims description 49
- 238000009713 electroplating Methods 0.000 claims description 29
- 238000000059 patterning Methods 0.000 claims description 23
- 238000003466 welding Methods 0.000 claims description 19
- 238000011068 loading method Methods 0.000 claims description 15
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000003825 pressing Methods 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (10)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310230281.5A CN104241231B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板的制作方法 |
CN201710592392.9A CN107393899B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
CN201710592393.3A CN107170689B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
TW102121214A TWI530238B (zh) | 2013-06-11 | 2013-06-14 | 晶片封裝基板及其製作方法 |
US14/140,461 US9159614B2 (en) | 2013-06-11 | 2013-12-24 | Packaging substrate and method for manufacturing same |
US14/841,721 US9472426B2 (en) | 2013-06-11 | 2015-09-01 | Packaging substrate and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310230281.5A CN104241231B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板的制作方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710592392.9A Division CN107393899B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
CN201710592393.3A Division CN107170689B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104241231A true CN104241231A (zh) | 2014-12-24 |
CN104241231B CN104241231B (zh) | 2017-12-08 |
Family
ID=52004788
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310230281.5A Active CN104241231B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板的制作方法 |
CN201710592392.9A Active CN107393899B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
CN201710592393.3A Active CN107170689B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710592392.9A Active CN107393899B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
CN201710592393.3A Active CN107170689B (zh) | 2013-06-11 | 2013-06-11 | 芯片封装基板 |
Country Status (3)
Country | Link |
---|---|
US (2) | US9159614B2 (zh) |
CN (3) | CN104241231B (zh) |
TW (1) | TWI530238B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393834A (zh) * | 2016-05-12 | 2017-11-24 | 三星电子株式会社 | 内插器、半导体封装和制造内插器的方法 |
CN108140730A (zh) * | 2015-10-12 | 2018-06-08 | 应用材料公司 | 以半加成电镀金属布线制造三维(3d)金属-绝缘体-金属(mim)电容器及电阻器的结构及方法 |
CN112599424A (zh) * | 2020-12-16 | 2021-04-02 | 南通越亚半导体有限公司 | 一种超薄基板结构的制造方法 |
CN114521060A (zh) * | 2020-11-18 | 2022-05-20 | 深南电路股份有限公司 | 一种印制线路板及其制备方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101706470B1 (ko) | 2015-09-08 | 2017-02-14 | 앰코 테크놀로지 코리아 주식회사 | 표면 마감층을 갖는 반도체 디바이스 및 그 제조 방법 |
TWI594383B (zh) * | 2016-07-04 | 2017-08-01 | 欣興電子股份有限公司 | 封裝基板及其製造方法 |
WO2018013121A1 (en) * | 2016-07-14 | 2018-01-18 | Intel Corporation | Systems and methods for semiconductor packages using photoimageable layers |
CN109788666B (zh) * | 2017-11-14 | 2020-10-27 | 何崇文 | 线路基板及其制作方法 |
CN113130420A (zh) * | 2021-03-19 | 2021-07-16 | 南通越亚半导体有限公司 | 一种嵌埋封装结构及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1315055A (zh) * | 1998-08-27 | 2001-09-26 | 美国3M公司 | 通孔凸块接触 |
US20080188037A1 (en) * | 2007-02-05 | 2008-08-07 | Bridge Semiconductor Corporation | Method of manufacturing semiconductor chip assembly with sacrificial metal-based core carrier |
CN101578929A (zh) * | 2007-09-20 | 2009-11-11 | 揖斐电株式会社 | 印刷线路板及其制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003031719A (ja) * | 2001-07-16 | 2003-01-31 | Shinko Electric Ind Co Ltd | 半導体パッケージ及びその製造方法並びに半導体装置 |
JP5032187B2 (ja) * | 2007-04-17 | 2012-09-26 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置の製造方法及び配線基板 |
TWI354356B (en) | 2008-04-11 | 2011-12-11 | Unimicron Technology Corp | Multilayer package substrate and method for fabric |
JP5339928B2 (ja) * | 2009-01-15 | 2013-11-13 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP5561460B2 (ja) * | 2009-06-03 | 2014-07-30 | 新光電気工業株式会社 | 配線基板および配線基板の製造方法 |
JP2011013869A (ja) | 2009-07-01 | 2011-01-20 | Hitachi Ltd | 入力電文処理方法 |
CN102054814B (zh) * | 2009-11-06 | 2012-07-25 | 欣兴电子股份有限公司 | 无核心层封装基板及其制法 |
US20120112345A1 (en) * | 2010-11-04 | 2012-05-10 | Endicott Interconnect Technologies, Inc. | High bandwidth semiconductor ball grid array package |
JP5649490B2 (ja) * | 2011-03-16 | 2015-01-07 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
US9425136B2 (en) * | 2012-04-17 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conical-shaped or tier-shaped pillar connections |
-
2013
- 2013-06-11 CN CN201310230281.5A patent/CN104241231B/zh active Active
- 2013-06-11 CN CN201710592392.9A patent/CN107393899B/zh active Active
- 2013-06-11 CN CN201710592393.3A patent/CN107170689B/zh active Active
- 2013-06-14 TW TW102121214A patent/TWI530238B/zh active
- 2013-12-24 US US14/140,461 patent/US9159614B2/en active Active
-
2015
- 2015-09-01 US US14/841,721 patent/US9472426B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1315055A (zh) * | 1998-08-27 | 2001-09-26 | 美国3M公司 | 通孔凸块接触 |
US20080188037A1 (en) * | 2007-02-05 | 2008-08-07 | Bridge Semiconductor Corporation | Method of manufacturing semiconductor chip assembly with sacrificial metal-based core carrier |
CN101578929A (zh) * | 2007-09-20 | 2009-11-11 | 揖斐电株式会社 | 印刷线路板及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108140730A (zh) * | 2015-10-12 | 2018-06-08 | 应用材料公司 | 以半加成电镀金属布线制造三维(3d)金属-绝缘体-金属(mim)电容器及电阻器的结构及方法 |
CN108140730B (zh) * | 2015-10-12 | 2022-06-03 | 应用材料公司 | 基板及处理基板的方法 |
CN107393834A (zh) * | 2016-05-12 | 2017-11-24 | 三星电子株式会社 | 内插器、半导体封装和制造内插器的方法 |
CN107393834B (zh) * | 2016-05-12 | 2023-07-18 | 三星电子株式会社 | 内插器、半导体封装和制造内插器的方法 |
CN114521060A (zh) * | 2020-11-18 | 2022-05-20 | 深南电路股份有限公司 | 一种印制线路板及其制备方法 |
CN112599424A (zh) * | 2020-12-16 | 2021-04-02 | 南通越亚半导体有限公司 | 一种超薄基板结构的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107170689A (zh) | 2017-09-15 |
US9159614B2 (en) | 2015-10-13 |
CN107393899A (zh) | 2017-11-24 |
CN107393899B (zh) | 2020-07-24 |
CN107170689B (zh) | 2019-12-31 |
CN104241231B (zh) | 2017-12-08 |
TW201511626A (zh) | 2015-03-16 |
TWI530238B (zh) | 2016-04-11 |
US20140361439A1 (en) | 2014-12-11 |
US9472426B2 (en) | 2016-10-18 |
US20150371873A1 (en) | 2015-12-24 |
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