CN104236723B - A kind of three-dimensional MEMS thermopile IR detector structure - Google Patents
A kind of three-dimensional MEMS thermopile IR detector structure Download PDFInfo
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- CN104236723B CN104236723B CN201410520500.8A CN201410520500A CN104236723B CN 104236723 B CN104236723 B CN 104236723B CN 201410520500 A CN201410520500 A CN 201410520500A CN 104236723 B CN104236723 B CN 104236723B
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Abstract
The invention discloses a kind of three-dimensional MEMS thermopile IR detector structure, the three-dimensional thermopile structure being radially distributed around the vertical center of insulated cavity is formed by the way that thermocouple is serially connected, two thermocouple units of the thermocouple pair of series connection are produced on levels different up and down, the thermojunction of thermocouple is set to be located at close to the upper position of heat-sink shell, and cold junction is embedded in the Heat Conduction Material of lower, the heat that thermocouple receives can be delivered in substrate rapidly, cold junction is set to be not easy to be influenceed by environment temperature, and the heat of the thermojunction in insulated cavity adiabatic environment is not easy to scatter and disappear, can relative decrease heat absorption area size, extend the length of thermocouple hot junction part, and by setting suitable thermocouple quantity, the comprehensive responsiveness and detectivity for improving detector, so as to improve the temperature resolution of thermopile detector and stability.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, more particularly to a kind of MEMS thermopile with three-dimensional structure
Infrared detector.
Background technology
Thermocouple is a kind of wide variety of temperature sensor, is also used to thermal potential difference being converted to electrical potential difference.Its work is former
Reason is in the pyroelectric effect or Seebeck effects found in 1821 based on Thomas Seebeck：By two kinds of different metal materials
Expect in the loop that A and B is formed, if temperature of the two kinds of metals at node is different, a temperature will be produced in the loop
Poor electromotive force.
The voltage as caused by Seebeck effects is represented by：
Wherein, SAAnd SBRespectively above two metal material A and B Seebeck coefficients, it depends on temperature and material
Molecular structure, normally approximately temperature independent material property.
Thermoelectric pile is formed when multiple thermocouples are together in series.In the identical temperature difference, the open circuit output of thermoelectric pile
Voltage is the thermoelectromotive force sum of all series connection thermocouples (number is represented with n).Under the conditions of identical electrical signal detection, thermoelectricity
The minimum temperature difference that heap can detect is the 1/n of single thermocouple, so as to enhance its resolution capability to temperature.
With flourishing for microelectric technique and large scale integrated circuit, it is proposed that microelectromechanical systems (micro-
Electro-mechanical system, MEMS) concept.Under the premise of herein, semi-conducting material is as thermopile infrared detection
The scheme of device matrix reaches its maturity, and has thus developed MEMS thermopile infrared detector.MEMS thermopile infrared detector
With conventional detectors institute it is incomparable the advantages of：Small volume, light weight, low in energy consumption, reliability is high, excellent performance, thus can
To realize the micro of detector, it is applicable in portable equipment, and due to substantial amounts of thermocouple can be integrated, therefore can enter
One step improves the resolution ratio to temperature sensing.
MEMS thermopile infrared detector is a kind of infrared detector based on Seebeck effects, is not usually required to refrigeration,
It can work at normal temperatures, and it is uniform to infrared optical response interior in a big way.Because its cost of manufacture is relatively low, it is big to realize
Batch production, therefore, has a wide range of applications in security monitoring, therapeutic treatment, life detection etc..Responsiveness, detectivity
It is several important performance indexes of infrared detector with the response time.
Existing MEMS thermopile infrared detector is technically substantially using CMOS technology, by thermocouple to being fabricated to
Planar structure, the cold end top layer for being placed directly within device same with hot junction of thermoelectric pile.This structure is relatively vulnerable to ring residing for device
The influence of border temperature, cause the decline of thermopile IR detector temperature resolution and stability.
The content of the invention
It is an object of the invention to overcome drawbacks described above existing for prior art, there is provided a kind of three-dimensional MEMS thermopile IR
Panel detector structure, by by the two thermocouple unit styles formed by two kinds of thermocouple materials for the thermocouple pair connected in thermopile structure
Make, in levels different up and down, to make the thermojunction of thermocouple to be located at close to the upper position of heat-sink shell, and cold junction is embedded in and is located at
In the Heat Conduction Material of lower, each thermocouple is serially connected the three-dimensional to be formed and be radially distributed around the vertical center of insulated cavity
Thermopile structure, cold junction is set to be not easy to be influenceed by environment temperature, and the heat of thermojunction is not easy to scatter and disappear, so as to improve thermoelectric pile
The temperature resolution and stability of detector.
To achieve the above object, technical scheme is as follows：
A kind of three-dimensional MEMS thermopile IR detector structure, from bottom to top including Semiconductor substrate, the first heat-conducting layer,
Two heat-conducting layers, insulating protective layer, and insulated cavity is surrounded by, the insulating protective layer is coated with heat-sink shell, and connects with middle part
Lead to the opening of the insulated cavity；Some thermocouples are radially distributed and connected for one around the vertical center of the insulated cavity
Body forms thermoelectric pile, and each thermocouple includes the first thermocouple unit setting up and down formed by the first thermocouple material and by the
The second thermocouple unit that two thermocouple materials are formed, the second thermocouple unit connect up first thermocouple by its extension
Unit, and the thermojunction of the thermocouple is formed in junction, the first thermocouple unit connects downwards adjacent institute by its extension
The second thermocouple unit of thermocouple is stated, and the cold junction of the thermocouple is formed in junction, two kinds of thermocouple materials of each thermocouple
Form thermocouple pair；Wherein, Outboard Sections of each thermocouple including the extension of the first thermocouple unit are located at
In second heat-conducting layer, the cold end of the thermoelectric pile is formed, including the extension of the second thermocouple unit
Inboard portion is suspended above the substrate in the insulated cavity, forms the hot junction of the thermoelectric pile, the heat-sink shell position
It is in contact above the hot junction of the thermoelectric pile, and by the insulating protective layer with the hot junction of the thermoelectric pile.
Preferably, the infrared detector is 0.5~2 millimeter 0.1~10 millimeter of diameter, height of cylinder, it is described every
Hot cavity is circular cavity, and the opening of the insulating protective layer is the circular hole of 5~100 microns of diameter.
Preferably, the first thermocouple unit of each thermocouple and the second thermocouple unit are shaped as vertical bar
Shape, and setting is horizontally staggered up and down, form 5~60 degree of angle.
Preferably, the second thermocouple unit of each thermocouple is towards the vertical centrally disposed of the insulated cavity, respectively
The same side direction of the first thermocouple unit towards the second thermocouple unit is staggered with the second thermocouple unit.
Preferably, the first thermocouple unit of each thermocouple and the shape of the second thermocouple unit are respectively curved
Folding it is Z-shaped, the Z-shaped the lower section of the second thermocouple unit of each thermocouple is towards the vertical center of the insulated cavity
Set, and the Z-shaped upper portion for extension connection the first thermocouple unit for passing through the second thermocouple unit, it is described
The Z-shaped the lower section of first thermocouple unit connects the institute of the adjacent thermocouple by the extension of the first thermocouple unit
State the Z-shaped upper portion of the second thermocouple unit.
Preferably, the Z-shaped the lower section of the second thermocouple unit is vertical with center section part split-phase, upper portion and center section part
It is divided into 100~150 degree of angles to set；The Z-shaped epimere of the first thermocouple unit, stage casing, the lower section are mutually perpendicular to set respectively
Put.
Preferably, the Z-shaped the lower section of the second thermocouple unit and the Z-shaped center section part split-phase of the first thermocouple unit
It is parallel.
Preferably, the length of the Z-shaped the lower section of the second thermocouple unit is 10~100 microns, first thermocouple
The Z-shaped epimere of unit and the length of the lower section are 5~50 microns.
Preferably, the thermoelectric pile surround the vertical center of the insulated cavity radially by 5~30 thermocouples
Even level, which is distributed and connected, is integrated composition.
It can be seen from the above technical proposal that the present invention is by by two thermocouples of the thermocouple pair connected in thermopile structure
Unit is produced on levels different up and down, the thermojunction of thermocouple is located at close to the upper position of heat-sink shell, and cold junction is buried
In the Heat Conduction Material positioned at lower, after the cold end of thermoelectric pile is connected with reference edge, the heat that thermocouple receives can be rapid
It is delivered in substrate, cold junction is not easy to be influenceed by environment temperature, and the heat of the thermojunction in insulated cavity adiabatic environment
It is not easy to scatter and disappear；Each thermocouple is serially connected to be formed around the vertical center of the insulated cavity three-dimensional that radially even level is distributed
Thermopile structure, the thermoelectric pile of square structure is formed compared to traditional connected by thermocouple, can relative decrease heat absorption area size, prolong
The length of long thermocouple hot junction part (overhanging portion of thermocouple pair), and by setting suitable thermocouple quantity, synthesis improves spy
The responsiveness and detectivity of device are surveyed, so as to improve the temperature resolution of thermopile detector and stability.
Brief description of the drawings
Fig. 1 is a kind of cross section structure diagram of three-dimensional MEMS thermopile IR detector structure of the present invention；
Fig. 2 is the thermoelectric pile dimensional structure diagram in one embodiment of the invention；
Fig. 3 is the thermoelectric pile planar structure schematic diagram in one embodiment of the invention；
Fig. 4 is the thermoelectric pile dimensional structure diagram in another embodiment of the present invention；
Fig. 5 is the thermoelectric pile planar structure schematic diagram in another embodiment of the present invention；
Fig. 6 a~Fig. 6 o are respectively walked in a kind of method for the three-dimensional MEMS thermopile IR detector structure for making the present invention
Device architecture schematic diagram corresponding to rapid.
Embodiment
Below in conjunction with the accompanying drawings, the embodiment of the present invention is described in further detail.
It should be noted that in following embodiments, when embodiments of the present invention are described in detail, in order to clear
Ground represents the structure of the present invention in order to illustrate, special that structure in accompanying drawing is not drawn according to general proportion, and has carried out part
Amplification, deformation and simplified processing, therefore, should avoid being understood in this, as limitation of the invention.
In following embodiments, referring to Fig. 1, Fig. 1 is a kind of three-dimensional MEMS thermopile infrared detection of the present invention
The cross section structure diagram of device structure.As shown in figure 1, the three-dimensional MEMS thermopile IR detector structure of the present invention, from lower
It is upper to include Semiconductor substrate 1, the first heat-conducting layer 2, the second heat-conducting layer 4, insulating protective layer 8.First heat-conducting layer 2, the second heat-conducting layer 4
It is after the insulating protective layer 8 of substrate 1 and top with lower section is combined, i.e., square into the heat-insulated of detector on substrate 1 for annular
Cavity 10.For example, the insulated cavity 10 of circle can be surrounded.Insulating protective layer 8 is coated with heat-sink shell 9, and middle part has opening 11, opened
Mouth 11 connects insulated cavities 10.This 11 release window as the release process used when forming insulated cavity 10 of opening.Opening
11 can be fabricated to the circular hole form of such as 5~100 microns of diameter.The profile of infrared detector for example can be cylinder, its diameter
For 0.1~10 millimeter, be highly 0.5~2 millimeter.
Please continue to refer to Fig. 1.Thermoelectric pile is connected by some thermocouples 12 and formed, and some thermocouples 12 are around the insulated cavity
Vertical center, which is radially distributed and connected, is integrated composition thermoelectric pile, is formed for example with 5~30 series connection of thermocouple 12.It is each
Around the vertical center of insulated cavity 10, radially even level is distributed thermocouple 12, and connects and be integrated that (concrete form please join
Fig. 2 is read to Fig. 5, and is described in detail later).Each thermocouple 12 includes setting up and down being formed by the first thermocouple material
First thermocouple unit 7 and the second thermocouple unit 3 formed by the second thermocouple material.Second thermocouple unit 3 by its extension 5 to
The first thermocouple unit 7 of upper connection, and form the thermojunction of thermocouple in junction；First thermocouple unit 7 is connected downwards by its extension
The second thermocouple unit of adjacent thermocouple is connect, and the cold junction of thermocouple is formed in junction.Understand from schematic structure, as one is adjacent
First thermocouple unit 7-1 of thermocouple connects downwards the second thermocouple unit 3 of thermocouple adjacent thereto by its extension 6, and
Junction forms the cold junction of thermocouple.Two kinds of thermocouple materials of each thermocouple 12 form thermocouple pair.Wherein, each thermocouple includes the first heat
Outboard Sections including even unit 7-1 extension 6 are located in the second heat-conducting layer 4, form the cold end of thermoelectric pile；Including the second heat
Inboard portion including the extension 5 of even unit 3 is suspended at the top of substrate 1 in insulated cavity 10, forms the hot junction of thermoelectric pile,
That is a part for each thermocouple 12 of thermoelectric pile is embedded in the second heat-conducting layer 4, is formed cantilevered fashion and is stretched into insulated cavity 10.Bag
The heat-sink shell 9 overlayed in insulating protective layer 8 is ring-type, positioned at the hot junction upper of thermoelectric pile, does not cover the cold end of thermoelectric pile
Part.Heat-sink shell 9 is in contact by insulating protective layer 8 with the hot junction part of thermoelectric pile, i.e., is located at hot junction with the first thermocouple unit 7
Part be in contact.
In one embodiment of this invention, Fig. 2 and Fig. 3 are referred to, Fig. 2 is that the thermoelectric pile in one embodiment of the invention is three-dimensional
Structural representation；Fig. 3 is the thermoelectric pile planar structure schematic diagram in one embodiment of the invention.As shown in Figure 2 (to clearly show that figure
In each structure, this figure employ transparent form drafting), three-dimensional MEMS thermopile IR detector of the invention for cylinder, bag
The substrate 1 of bottom is included, is linked as overall the first heat-conducting layer 2 and the second heat-conducting layer 4.The Outboard Sections of the thermoelectric pile of annular are positioned at the
In two heat-conducting layers 4, formed by 15 thermocouple head and the tail series connection.Heat-sink shell 9 is ring-type, positioned at the hot junction upper of thermoelectric pile, no
Cover the cold end part of thermoelectric pile.Each thermocouple includes the first thermocouple unit formed by the first thermocouple material that upper lower leaf is set
7 and the second thermocouple unit 3 for being formed by the second thermocouple material.First thermocouple unit 7 and the second thermocouple unit 3 are shaped as vertical bar
Shape, thickness are 0.3~10 micron.Second thermocouple unit 3 has vertical extension 5 by the end on the inside of thermoelectric pile, and passes through
Extension 5 connects up the first thermocouple unit 7, and the thermojunction 12 that its junction forms thermocouple (marks one of the opposite side in figure
At the extension of second thermocouple unit).Second thermocouple unit 3 is formed with its extension 5 using the second same thermocouple material.The
One thermocouple unit 7-1 also has vertical extension 6 by the end on the outside of thermoelectric pile, and is connected downwards by extension 6 adjacent
Second thermocouple unit 3 of another thermocouple, its junction formed thermocouple cold junction 13 (mark in figure lower right another the
At the extension of one thermocouple unit).First thermocouple unit 7-1 is formed with its extension 6 using the first same thermocouple material.Two
The extension of individual thermocouple unit is cylinder, or other cylindricalitys.
Please refer to Fig. 3.In order that each thermocouple unit of vertical bar shaped can be in series by cylindrical extension, it is necessary to will
First thermocouple unit 7 and the second thermocouple unit are horizontally staggered setting about 3, and make the first thermocouple unit 7 and the second thermocouple unit 3
5~60 degree of relative deflection angle is formed in upright projection direction.Preferably deflection angle for example can be 18 degree.Meanwhile each heat
The second even thermocouple unit 3 is towards the vertical centrally disposed of insulated cavity 10, and each first thermocouple unit 7 is towards the second thermocouple unit
3 same side direction (being illustrated as clockwise direction deflection to the right) is staggered with the second thermocouple unit 3.Form thermoelectric pile
15 thermocouples (i.e. thermocouple to) head and the tail are connected, and form the spoke that horizontal homogeneous is distributed centered on the vertical central shaft of insulated cavity 10
Penetrate shape loop configuration.
So, it each the first thermocouple unit of thermocouple and the second thermocouple unit will be divided into two layers of setting up and down, make hot junction
In insulated cavity in thermal insulation, and thermojunction is set to be located at higher position；And cold end is embedded in the heat conduction formed by Heat Conduction Material
In layer, and cold junction is set to be located at relatively low position.After the cold end of thermoelectric pile is connected with reference edge, the heat that thermocouple receives can be fast
Speed is delivered in substrate, makes cold junction be not easy to be influenceed by environment temperature；And the thermojunction in insulated cavity adiabatic environment can be fast
Quick access receives the heat from heat-sink shell, and heat is not easy to scatter and disappear.The three-dimensional thermopile structure of the present invention forms ring-type, positioned at interior
The thermocouple hot junction of side is in coherent condition, the thermocouple cold end positioned at outside is in divergent state.Compared to traditional by some thermocouples
Series connection is distributed the thermoelectric pile of the square structure to be formed along square heat-sink shell, can relative decrease heat absorption area size, extend thermocouple heat
The length of end part (overhanging portion of thermocouple pair), and by setting suitable thermocouple quantity, the comprehensive sound for improving detector
Should rate and detectivity, so as to improve the temperature resolution of thermopile detector and stability.
In another embodiment of the invention, Fig. 4 and Fig. 5 are referred to, Fig. 4 is the thermoelectric pile in another embodiment of the present invention
Dimensional structure diagram；Fig. 5 is the thermoelectric pile planar structure schematic diagram in another embodiment of the present invention.It is as shown in figure 4, of the invention
Three-dimensional MEMS thermopile IR detector be similarly cylinder, thermoelectric pile is formed by the head and the tail series connection of 15 thermocouples.Each thermocouple bag
The second heat for including the first thermocouple unit 7 formed by the first thermocouple material of lower leaf setting and being formed by the second thermocouple material
Even unit 3.First thermocouple unit 7 and the second thermocouple unit 3 are shaped as the English being combined into that is connected by three sections of vertical bar shapeds bendings
Zed shape shape, thickness are 0.3~10 micron.First thermocouple unit 7 is different with the Z-shaped direction of the second thermocouple unit 3, wherein,
The Z-shaped inner side towards thermoelectric pile of first thermocouple unit 7 is just put, and the Z-shaped inner side towards thermoelectric pile of the second thermocouple unit 3 is horizontal
Put.The end of second thermocouple unit 3 in the inner part has vertical extension 5, and connects up the first thermocouple list by extension 5
Member 7, its junction form the thermojunction 12 (marking at the extension of a second thermocouple unit of the opposite side in figure) of thermocouple.The
Two thermocouple units 3 are formed with its extension 5 using the second same thermocouple material.The ends of first thermocouple unit 7-1 in the outer part
Also there is vertical extension 6, and connect the second thermocouple unit 3 of another adjacent thermocouple downwards by extension 6, it is connected
Place forms the cold junction 13 (marking in figure at the extension of another the first thermocouple unit on right side) of thermocouple.First thermocouple unit
7-1 is formed with its extension 6 using the first same thermocouple material.The extension of two thermocouple units is cylinder, or
Other cylindricalitys.
Fig. 5 is referred to continuing with combining.The Z-shaped the lower section 3-3 of second thermocouple unit of each thermocouple is towards insulated cavity
10 it is vertical centrally disposed, its length is 10~100 microns, and connects the first thermocouple list by the extension of the second thermocouple unit
The Z-shaped upper portion 7-2 of member.The Z-shaped the lower section 7-4 of first thermocouple unit connects phase by the extension of the first thermocouple unit
The Z-shaped upper portion of second thermocouple unit of another adjacent thermocouple.Z-shaped the lower section 3-3 and center section part of second thermocouple unit
Divide 3-2 perpendicular, upper portion 3-1 and stage casing part 3-2 to be set into 100~150 degree of angles, preferably set with 115 degree of angle
Put；The Z-shaped upper portion 3-1 of second thermocouple unit, stage casing part 3-2, the lower section 3-3 length increase setting successively.The
Z-shaped upper portion 7-2, stage casing part 7-3, the lower section 7-4 of one thermocouple unit are arranged in a mutually vertical manner respectively, its Z-shaped epimere
Compared with stage casing part 7-3 it is short with the length of the lower section 7-2,7-4, is 5~50 microns.The Z-shaped hypomere portion of second thermocouple unit
Divide 3-3 settings parallel with the Z-shaped stage casing part 7-3 of the first thermocouple unit.
Thermoelectric pile stereochemical structure in another embodiment of the present invention, except with foregoing first embodiment identical
Outside advantage, compared with one embodiment, due to by thermocouple to design it is z-shape, more increase the length of cold end, therefore, not only
Can be more quickly by the heat transfer of thermocouple into substrate, and enhance cantilevered thermocouple and (be embedded to and lead in detector
Part in thermosphere) structural stability, make detector be not readily susceptible to damage.
Below by Fig. 6 a~Fig. 6 o, add to making the method for three-dimensional MEMS thermopile IR detector structure of the present invention
With explanation.Fig. 6 a~Fig. 6 o are each steps in a kind of method for the three-dimensional MEMS thermopile IR detector structure for making the present invention
Corresponding device architecture schematic diagram.
First, Fig. 6 a are refer to, the first heat-conducting layer 202 is deposited in Semiconductor substrate 201.The material of substrate 201 can be with
It is silicon, germanium or germanium silicon.First heat-conducting layer can be SiO2Film, BN films, AlN films or undoped monocrystalline silicon thin film.Compared with
Good, substrate 201 is monocrystalline substrate, and the first heat-conducting layer 202 is BN films.
Fig. 6 b are refer to, the second thermocouple material is deposited on the first heat-conducting layer 202, and graphically, are had necessarily to be formed
Second thermocouple layer 203 of quantity the second thermocouple unit.Second thermocouple material can be thermal conductivity poor polysilicon membrane or amorphous
Silicon thin film, thickness are 0.3~10 micron.Preferably, polysilicon membrane can be used.
Fig. 6 c~6g are refer to, thermocouple extension is made on the second thermocouple layer 203 by single Damascus technics twice.
Specifically, first as fig. 6 c, the second heat-conducting layer is deposited on the first heat-conducting layer 202 and the second thermocouple layer
204.Second heat-conducting layer 204 can be SiO2Film, BN films, AlN films or undoped monocrystalline silicon thin film.Preferably, the
Two heat-conducting layers 204 and the first heat-conducting layer 202 are all BN films.
Then, as shown in fig 6d, the second heat-conducting layer 204 is patterned, forms bottom and extend to the second thermocouple layer
Second thermocouple through hole.According to the difference of the material of the second heat-conducting layer 204, can select that there is compared with high selectivity the second thermocouple layer
Different etching method.Wet etching is used to the graphical of BN films, decoction used is the mixed solution of the concentrated sulfuric acid and hydrogen peroxide.
Fig. 6 e are refer to again, the second thermocouple material are filled in the second thermocouple through hole and by CMP (chemically mechanical polishing)
Technique is planarized so that the upper surface of the second thermocouple material in the second thermocouple through hole and the upper table of the second heat-conducting layer 204
Face is concordant.The second thermocouple material in second thermocouple through hole forms the second thermocouple unit extension 205.
It is similar with step shown in Fig. 6 d please continue to refer to Fig. 6 f, the second heat-conducting layer 204 is patterned again, shape
The first thermocouple through hole of the second thermocouple layer is extended into bottom.Likewise, the graphical use to the second heat-conducting layer 204BN films
Wet etching, decoction used are the mixed solution of the concentrated sulfuric acid and hydrogen peroxide.
Finally, Fig. 6 g are refer to, it is similar with step shown in Fig. 6 e, the first thermocouple material is filled in the first thermocouple through hole,
And planarized by CMP so that the upper surface of the first thermocouple material in the first thermocouple through hole and the second heat-conducting layer
204 upper surface is concordant.The first thermocouple material in first thermocouple through hole forms the first thermocouple unit extension 206.Wherein,
One thermocouple material can be the preferable Al films of thermal conductivity, Cu films or W film, and thickness is 0.3~10 micron.
Next, formed on the second thermocouple unit extension 205 and the first thermocouple unit extension 206 by with corresponding
The first thermocouple layer that first thermocouple unit of the second thermocouple element number is formed, specifically refer to Fig. 6 h~6j.
First, in upper surface concordant the second thermocouple unit extension, the first thermocouple unit extension and the second heat-conducting layer
Upper redeposited 3rd heat-conducting layer；The material of 3rd heat-conducting layer identical with the second heat-conducting layer (is exactly the continuity of the second heat-conducting layer in fact
Deposition, therefore employ identical mark 204).Afterwards, is etched in the 3rd heat-conducting layer 204 by photoetching, etching technics
The figure of one thermocouple layer；The graph position of first thermocouple layer corresponds with thermocouple unit extension, its bottom and thermocouple unit
Extension upper surface.Then, the first thermocouple material is deposited, and is planarized by CMP, forms the first thermocouple layer
207.The upper surface of first thermocouple layer 207 is concordant with the upper surface of the 3rd heat-conducting layer 204, and extends with the second thermocouple unit
Portion is connected with the first thermocouple unit extension.In this way, complete the second thermocouple layer 203, thermocouple unit extension 205 and 206,
The thermoelectric pile agent structure that one thermocouple layer 207 is formed.Wherein, the first thermocouple unit of each thermocouple pair of the first thermocouple layer 207
With the thermojunction that the connecting place of the second thermocouple unit extension 205 is thermocouple, the first thermocouple unit extension 206 and the second thermocouple layer
Second thermocouple unit connecting place of 207 adjacent another thermocouple pair is the cold junction of thermocouple.Because cold junction is embedded in the second heat-conducting layer
204 bottoms, thus it is not easy to be influenceed by environment temperature.
Next, the step of carrying out forming heat-sink shell.Heat-sink shell is coated by insulating protective layer, to be better protected from thermojunction
The heat at place scatters and disappears.Fig. 6 k are refer to, the first insulating protective layer is deposited on the 3rd heat-conducting layer 204 and the first thermocouple layer 207
208.Insulation protection layer material is silicon oxide film or silicon nitride film, preferably, insulating protective layer 208 is using PECVD side
The silicon oxide film of method deposition.
Then, as shown in Fig. 6 l, it is simultaneously graphical that heat-sink shell 209 is grown on the first insulating protective layer 208 so that heat-sink shell
209 above hot junction.Heat-sink shell is used to receive infra-red radiation, is the preferable thin-film material of infrared absorption characteristic, such as silicon nitride
Film, Ti or TiAlN thin film, Ta or TaN films, thickness are 100 angstroms~5 microns.It is preferred that heat-sink shell 209 is that square resistance is close certainly
By space impedance (about 377ohms/square) TiAlN thin film.
And then, redeposited one layer of second insulating protective layer 208a on patterned heat-sink shell 209 is complete by heat-sink shell
Wrap up, as shown in Fig. 6 m.
Then, Fig. 6 n are refer to, insulating protective layer 208,208a are patterned, and are formed through insulating protective layer
Release window.Now, heat-sink shell is still completely wrapped in insulating protective layer, is not easy to scatter and disappear so as to the heat in hot junction.
Finally, Fig. 6 o are refer to, release process is carried out by release window, forms final MEMS thermopile infrared acquisition
Device structure.In preferable release process, the heat conduction below hot junction is removed using the mixed solution wet method of the concentrated sulfuric acid and hydrogen peroxide
The expendable material boron nitride of layer 204 and 202.Wet method release process uses time control so that the second thermocouple unit after release
The first heat-conducting layer below the second heat-conducting layer (and the 3rd heat-conducting layer) and the second thermocouple unit extension around extension 205 is all
It is removed, and the heat-conducting layer around the first thermocouple unit extension still retains.Optionally, when heat conduction layer material is SiO2Film
When, wet processing uses BOE decoctions；When heat conduction layer material is BN films, wet processing is using the mixed of the concentrated sulfuric acid and hydrogen peroxide
Close solution；When heat conduction layer material is AlN films, wet processing uses concentrated phosphoric acid, and temperature is 120~200 degrees Celsius.
Above-described is only the preferred embodiments of the present invention, the embodiment and the patent guarantor for being not used to the limitation present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made are protected, similarly should be included in
In protection scope of the present invention.
Claims (9)
1. a kind of three-dimensional MEMS thermopile IR detector structure, it is characterised in that from bottom to top including Semiconductor substrate, first
Heat-conducting layer, the second heat-conducting layer, insulating protective layer, and insulated cavity is surrounded by, the insulating protective layer is coated with heat-sink shell, and has
There is the opening that middle part connects the insulated cavity；Some thermocouples are radially distributed simultaneously around the vertical center of the insulated cavity
Series connection is integrated composition thermoelectric pile, and each thermocouple includes the first thermocouple list setting up and down formed by the first thermocouple material
Member and the second thermocouple unit formed by the second thermocouple material, the second thermocouple unit are connected up described by its extension
First thermocouple unit, and the thermojunction of the thermocouple is formed in junction, the first thermocouple unit is connected downwards by its extension
The second thermocouple unit of the adjacent thermocouple is connect, and the cold junction of the thermocouple is formed in junction；Wherein, each thermocouple
Outboard Sections including the extension of the first thermocouple unit are located in second heat-conducting layer, form the heat
The cold end of pile, the inboard portion including the extension of the second thermocouple unit are suspended in the insulated cavity
The substrate above, form the hot junction of the thermoelectric pile, the heat-sink shell be located at the hot junction top of the thermoelectric pile, and
It is in contact by the insulating protective layer with the hot junction of the thermoelectric pile.
2. MEMS thermopile infrared detector structure according to claim 1, it is characterised in that the infrared detector is
0.5~2 millimeter 0.1~10 millimeter of diameter, height of cylinder, the insulated cavity are circular cavity, the insulating protective layer
The opening be 5~100 microns of diameter circular hole.
3. MEMS thermopile infrared detector structure according to claim 1, it is characterised in that the institute of each thermocouple
That states the first thermocouple unit and the second thermocouple unit is shaped as vertical bar shaped, and is horizontally staggered setting up and down, forms 5~60 degree
Angle.
4. MEMS thermopile infrared detector structure according to claim 3, it is characterised in that each thermocouple it is described
Second thermocouple unit is towards the vertical centrally disposed of the insulated cavity, and each first thermocouple unit is towards second thermocouple
The same side direction of unit is staggered with the second thermocouple unit.
5. MEMS thermopile infrared detector structure according to claim 1, it is characterised in that the institute of each thermocouple
The shape for stating the first thermocouple unit and the second thermocouple unit is respectively the Z-shaped of bending, and described the second of each thermocouple
The Z-shaped the lower section of thermocouple unit passes through the second thermocouple unit towards the vertical centrally disposed of the insulated cavity
The extension connects the Z-shaped upper portion of the first thermocouple unit, and the Z-shaped the lower section of the first thermocouple unit passes through
The extension of the first thermocouple unit connects the Z-shaped upper portion of the second thermocouple unit of the adjacent thermocouple.
6. MEMS thermopile infrared detector structure according to claim 5, it is characterised in that the second thermocouple unit
Z-shaped the lower section is vertical with center section part split-phase, upper portion and center section part are divided into 100~150 degree of angles and set；Described first
The Z-shaped epimere of thermocouple unit, stage casing, the lower section are arranged in a mutually vertical manner respectively.
7. MEMS thermopile infrared detector structure according to claim 5, it is characterised in that the second thermocouple unit
Z-shaped the lower section it is parallel with the Z-shaped center section part split-phase of the first thermocouple unit.
8. the MEMS thermopile infrared detector structure according to claim 5~7 any one, it is characterised in that described
The length of the Z-shaped the lower section of second thermocouple unit is 10~100 microns, the Z-shaped epimere and hypomere of the first thermocouple unit
Partial length is 5~50 microns.
9. according to the MEMS thermopile infrared detector structure described in claim 1,3 or 5, it is characterised in that the thermoelectric pile
By 5~30 thermocouples, around the vertical center of the insulated cavity, radially even level is distributed and connected and is integrated structure
Into.
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