CN104218084A - 半导体功率器件及其制造方法 - Google Patents
半导体功率器件及其制造方法 Download PDFInfo
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- CN104218084A CN104218084A CN201410041435.0A CN201410041435A CN104218084A CN 104218084 A CN104218084 A CN 104218084A CN 201410041435 A CN201410041435 A CN 201410041435A CN 104218084 A CN104218084 A CN 104218084A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000011248 coating agent Substances 0.000 claims description 61
- 238000000576 coating method Methods 0.000 claims description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 210000000746 body region Anatomy 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 92
- 238000005468 ion implantation Methods 0.000 description 35
- 238000005516 engineering process Methods 0.000 description 27
- 239000012535 impurity Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000407 epitaxy Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910016570 AlCu Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910018999 CoSi2 Inorganic materials 0.000 description 2
- 229910008479 TiSi2 Inorganic materials 0.000 description 2
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/66568—Lateral single gate silicon transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2013-0064269 | 2013-06-04 | ||
KR1020130064269A KR101779237B1 (ko) | 2013-06-04 | 2013-06-04 | 반도체 전력소자 및 이를 제조하는 방법 |
Publications (2)
Publication Number | Publication Date |
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CN104218084A true CN104218084A (zh) | 2014-12-17 |
CN104218084B CN104218084B (zh) | 2019-05-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410041435.0A Active CN104218084B (zh) | 2013-06-04 | 2014-01-28 | 半导体功率器件及其制造方法 |
Country Status (3)
Country | Link |
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US (1) | US9236470B2 (zh) |
KR (1) | KR101779237B1 (zh) |
CN (1) | CN104218084B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104617149A (zh) * | 2015-01-30 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | 隔离型nldmos器件及其制造方法 |
CN112103331A (zh) * | 2020-11-03 | 2020-12-18 | 晶芯成(北京)科技有限公司 | Ldmos晶体管及其制造方法 |
CN114220848A (zh) * | 2022-02-22 | 2022-03-22 | 浙江大学 | 一种快速开通的浮岛器件及其制造方法 |
WO2023124670A1 (zh) * | 2021-12-31 | 2023-07-06 | 无锡华润上华科技有限公司 | Ldmos器件的制备方法及ldmos器件 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI683437B (zh) * | 2016-12-30 | 2020-01-21 | 新唐科技股份有限公司 | 高壓半導體裝置 |
TWI624002B (zh) * | 2017-04-26 | 2018-05-11 | 世界先進積體電路股份有限公司 | 半導體裝置及其形成方法 |
US10014408B1 (en) * | 2017-05-30 | 2018-07-03 | Vanguard International Semiconductor Corporation | Semiconductor devices and methods for forming the same |
KR102227666B1 (ko) * | 2017-05-31 | 2021-03-12 | 주식회사 키 파운드리 | 고전압 반도체 소자 |
US10600649B2 (en) | 2017-09-21 | 2020-03-24 | General Electric Company | Systems and method for charge balanced semiconductor power devices with fast switching capability |
US11152505B2 (en) * | 2018-06-28 | 2021-10-19 | Texas Instruments Incorporated | Drain extended transistor |
KR102265031B1 (ko) | 2019-07-25 | 2021-06-14 | 주식회사 키 파운드리 | 채널 길이 조정이 용이한 반도체 소자 및 그 제조방법 |
Citations (3)
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CN1667838A (zh) * | 2004-03-11 | 2005-09-14 | 半导体元件工业有限责任公司 | 具有改进的开态电阻性能的高电压横向fet结构 |
US20060284276A1 (en) * | 2005-06-21 | 2006-12-21 | Hamza Yilmaz | High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions |
US7626233B2 (en) * | 2007-04-23 | 2009-12-01 | Infineon Technologies Ag | LDMOS device |
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US5313082A (en) | 1993-02-16 | 1994-05-17 | Power Integrations, Inc. | High voltage MOS transistor with a low on-resistance |
US6168983B1 (en) | 1996-11-05 | 2001-01-02 | Power Integrations, Inc. | Method of making a high-voltage transistor with multiple lateral conduction layers |
KR100948139B1 (ko) * | 2003-04-09 | 2010-03-18 | 페어차일드코리아반도체 주식회사 | 높은 브레이크다운 전압 및 낮은 온 저항을 위한 다중전류 이동 경로를 갖는 수평형 이중-확산 모스 트랜지스터 |
WO2010014283A1 (en) * | 2008-07-30 | 2010-02-04 | Max Power Semiconductor Inc. | Lateral devices containing permanent charge |
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2013
- 2013-06-04 KR KR1020130064269A patent/KR101779237B1/ko active IP Right Grant
- 2013-12-23 US US14/138,631 patent/US9236470B2/en active Active
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2014
- 2014-01-28 CN CN201410041435.0A patent/CN104218084B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1667838A (zh) * | 2004-03-11 | 2005-09-14 | 半导体元件工业有限责任公司 | 具有改进的开态电阻性能的高电压横向fet结构 |
US20060284276A1 (en) * | 2005-06-21 | 2006-12-21 | Hamza Yilmaz | High voltage semiconductor devices with JFET regions containing dielectrically isolated junctions |
US7626233B2 (en) * | 2007-04-23 | 2009-12-01 | Infineon Technologies Ag | LDMOS device |
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CN104617149A (zh) * | 2015-01-30 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | 隔离型nldmos器件及其制造方法 |
CN104617149B (zh) * | 2015-01-30 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 隔离型nldmos器件及其制造方法 |
CN112103331A (zh) * | 2020-11-03 | 2020-12-18 | 晶芯成(北京)科技有限公司 | Ldmos晶体管及其制造方法 |
CN112103331B (zh) * | 2020-11-03 | 2021-02-12 | 晶芯成(北京)科技有限公司 | Ldmos晶体管及其制造方法 |
WO2023124670A1 (zh) * | 2021-12-31 | 2023-07-06 | 无锡华润上华科技有限公司 | Ldmos器件的制备方法及ldmos器件 |
CN114220848A (zh) * | 2022-02-22 | 2022-03-22 | 浙江大学 | 一种快速开通的浮岛器件及其制造方法 |
CN114220848B (zh) * | 2022-02-22 | 2022-05-10 | 浙江大学 | 一种快速开通的浮岛器件及其制造方法 |
Also Published As
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KR20140142809A (ko) | 2014-12-15 |
CN104218084B (zh) | 2019-05-03 |
US20140353749A1 (en) | 2014-12-04 |
KR101779237B1 (ko) | 2017-09-19 |
US9236470B2 (en) | 2016-01-12 |
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