CN104217930A - Method for forming graphene patterns - Google Patents
Method for forming graphene patterns Download PDFInfo
- Publication number
- CN104217930A CN104217930A CN201310224082.3A CN201310224082A CN104217930A CN 104217930 A CN104217930 A CN 104217930A CN 201310224082 A CN201310224082 A CN 201310224082A CN 104217930 A CN104217930 A CN 104217930A
- Authority
- CN
- China
- Prior art keywords
- graphene
- layer
- substrate
- formation method
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 194
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 192
- 238000000034 method Methods 0.000 title claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 230000000873 masking effect Effects 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 196
- 230000015572 biosynthetic process Effects 0.000 claims description 66
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 55
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 36
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 15
- 238000000407 epitaxy Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000003467 diminishing effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H01L21/2053—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a method for forming graphene patterns. The method includes forming masking layers on substrates and forming openings in the masking layers; forming graphene layers on the surfaces of the substrates. The surfaces of the substrates are exposed via the openings. The graphene layers are positioned inside the opening. The method has the advantages that the graphene layers are directly formed on the surfaces of the substrates, so that the formed graphene patterns can be assuredly accurately positioned on the substrates; owing to the mode that the graphene layers are formed inside the openings of the masking layers, the structures of the graphene patterns which are formed on the exposed surfaces of the substrates in follow-up procedures can be constrained by patterns of the openings of the masking layers, the graphene layers can be prevented from being further etched, and quality defects of the formed graphene layers due to etching can be prevented; the accurate graphene patterns with high quality can be acquired by the aid of the method.
Description
Technical field
The present invention relates to semiconductor preparation field, especially relate to a kind of formation method of graphene pattern.
Background technology
Graphene is a kind of Stability Analysis of Structures, has excellent mechanical performance and the new material of electric property.Graphene be up to now find that the thinnest is also nanometer materials the hardest, conductive coefficient is up to 5300W/(mK); The charge carrier of Graphene not only can be electronics but also can be hole, and mobility is more than 15000cm
2/ (Vs), and carrier mobility is almost temperature independent.The heat conductivility of Graphene and carrier mobility are far away higher than CNT (carbon nano-tube) and silicon crystal.In addition, the resistivity of Graphene only about 10
-6Ω cm, than copper or silver lower.
Based on above-mentioned advantage, Graphene becomes gradually as the new lover of material prepared by the micro-nano devices such as molecule sensor, field-effect transistor, solar cell.And the transistor adopting Graphene to make has the features such as low-power consumption, high-frequency, miniaturization.
At existing Graphene in the application technology of micro-nano device, obtain high-quality Graphene by methods such as mechanical stripping method, chemical vapor infiltration, carborundum thermal decomposition methods, and obtain ad hoc structure Graphene by further patterning operation.Wherein, conventional graphene pattern method comprises:
(1), after first forming large-area Graphene on catalyst metals, Graphene is transferred in substrate, and adopt photoetching, lithographic technique realizes graphene pattern.But in etching process, easily cause Graphene to damage, thus affect Graphene electron mobility.
(2) first patterned catalyst metal, and Graphene is formed on catalyst metals, and Graphene is transferred to substrate.The method avoids and graphene-basedly receive damage in steps such as photoetching, but be difficult to realize Graphene in practical operation and accurately locate.
(3) the method substrate utilizing template to impress impresses Graphene, and the method can make the Graphene of different graphic, but the manufacturing process of template is complicated, high cost.
Thus, in substrate, how to obtain pattern accurate, good quality and the graphene pattern that manufacturing process is simple, cost is low is the problem that those skilled in the art need solution badly.
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method of graphene pattern, and to obtain quickly, pattern is accurate, the graphene pattern of good quality.
For solving the problem, the invention provides a kind of formation method of graphene pattern, comprising:
Substrate is provided;
Form masking layer on the substrate, there is in described masking layer the opening exposing described substrate surface;
Substrate surface in described opening forms graphene layer.
Remove described masking layer.
Alternatively, described substrate is single layer structure or layer stacked structure.
Alternatively, when described substrate is single layer structure, the material of substrate is carborundum.
Alternatively, when described substrate is layer stacked structure, what be positioned at most top layer is silicon carbide layer.
Alternatively, the formation method of described graphene layer is carborundum thermal decomposition method.
Alternatively, described carborundum thermal decomposition method comprises:
10
-6~ 10
-11under the ultravacuum environment of Torr, described silicon carbide layer is heated to 1200 ~ 2000 DEG C, be incubated 1 ~ 60 minute, to form graphene layer on described silicon carbide layer surface.
Alternatively, the method forming described silicon carbide layer is epitaxy.
Alternatively, described epitaxy comprises:
Under 500 ~ 700 DEG C of conditions, pass into Si
2h
6and CH
3siH
3, form described silicon carbide layer on the substrate.
Alternatively, the thickness of described masking layer is 100nm to 1000nm.
Present invention also offers the formation method of another kind of graphene pattern, comprising:
Substrate is provided;
Form masking layer on the substrate, there is in described masking layer the opening exposing described substrate surface;
Substrate surface in described opening forms graphene growth layer;
Graphene layer is formed on the surface of described graphene growth layer;
Remove described masking layer.
Alternatively, described graphene growth layer is silicon carbide layer.
Alternatively, the formation method of described graphene layer is carborundum thermal decomposition method.
Alternatively, described carborundum thermal decomposition method comprises:
Described silicon carbide layer is heated to 1200 ~ 2000 DEG C, be incubated 1 ~ 60 minute, to form graphene layer on described silicon carbide layer surface.
Alternatively, the formation method of described graphene growth layer is epitaxy.
Alternatively, described epitaxy comprises:
Under 500 ~ 700 DEG C of conditions, pass into Si
2h
6and CH
3siH
3, the substrate surface in described opening forms described silicon carbide layer.
Alternatively, the thickness of described masking layer is 100nm to 1000nm.
Compared with prior art, technical scheme of the present invention has the following advantages:
Substrate forms masking layer, and substrate surface exposed in described opening forms graphene layer, wherein, the mode of graphene layer is directly formed at described substrate surface, graphene layer can be avoided repeatedly to shift, thus guarantee that the graphene pattern formed is in suprabasil accurate location; The mode of graphene layer is formed in the opening of masking layer, the structure of the follow-up graphene pattern in described substrate exposed surface formation directly can be limited with the opening figure of masking layer, avoid and graphene layer is etched further, and then the mass defect that the graphene layer avoided the formation of causes because of etching.The graphene pattern that such scheme obtains is accurate, and quality is good, and preparation technology is simple, effectively reduces the cost payout forming graphene pattern.
Substrate forms masking layer, and in the opening of masking layer, form the mode of graphene growth layer, directly can form graphene layer on graphene growth layer surface equally, the graphene pattern that solution graphene pattern shifts and causes is difficult to pinpoint problem in substrate; And in the opening of masking layer, form the mode of graphene layer, the structure of the follow-up graphene pattern formed on the substrate is then limited with the opening figure of masking layer, avoid and graphene layer is etched further, and then the mass defect that the graphene layer avoided the formation of causes because of etching.
Accompanying drawing explanation
Fig. 1 ~ 4 are schematic diagrames of the embodiment 1 of the formation method of the first graphene pattern provided by the invention;
Fig. 5 ~ 7 are embodiment 2 schematic diagrames of the formation method of the first graphene pattern provided by the invention;
The schematic diagram of an embodiment of the formation method of Fig. 8 ~ 11 the second graphene pattern provided by the invention.
Embodiment
As described in background, the mechanical performance good based on Graphene and electric property, in IC manufacturing field, it has huge development potentiality, but as new material, and the practical application of Graphene but and immature.As in graphene pattern metallization processes, after formation Graphene, existing photoetching process is adopted to realize in graphene layer patterning process, graphene layer is easily caused to occur out-of-flatness, destroy the defects such as graphene layer structure, and constantly diminishing along with semiconductor device CD size, etch constantly diminishing of the Graphene live width of gained, the out-of-flatness defect of Graphene etched edge is also constantly exaggerated, and graphene-structured is destroyed the carrier mobility that directly affects Graphene.But if first catalyst metals after patterning forms graphene pattern, then graphene pattern is implanted in substrate, then cannot guarantee that graphene pattern is in suprabasil accurate location; If adopt template imprint process to form graphene pattern in substrate, then considerably increase process costs.
For this reason, the invention provides a kind of formation method of graphene pattern, to solve a difficult problem for existing graphene pattern.The formation method of described graphene pattern comprises: in substrate, first form the masking layer with opening, described masking layer comprises the opening on bare substrate surface, and the substrate surface in described opening directly forms graphene layer.Wherein, hatch frame and the follow-up Graphene figure that will be formed of described masking layer match, thus the structure of the graphene pattern of follow-up formation is guaranteed with described masking layer opening figure, avoid formed graphene layer formed after further patterning program, thus avoid graphene layer to sustain damage because of etching, to guarantee the electric property of the graphene pattern formed.And the present invention directly forms graphene layer in substrate, guarantee the accuracy of the graphene pattern of follow-up formation.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Embodiment 1
Fig. 1 ~ 4 are schematic diagrames of the embodiment 1 of the formation method of the first graphene pattern provided by the invention.
With reference to figure 1, provide a substrate 100; Described substrate 100 forms graphene growth layer 110 and masking layer 120 from the bottom to top according to this.
In the present embodiment, described substrate 100 can be the silicon of monocrystalline, polycrystalline or non crystalline structure, germanium, GaAs or SiGe (SiGe) compound, also can be the substrate that silicon-on-insulator (SOI) is made.Existing substrate all can be used as substrate of the present invention, will not enumerate at this.In the present embodiment, described substrate 100 is chosen as silicon base.
In the present embodiment, described graphene growth layer 110 is preferably silicon carbide layer.The method of the formation of described silicon carbide layer is chosen as epitaxy, detailed process comprises: be positioned in CVD chamber by substrate 100, adjust the temperature to 500 ~ 700 DEG C (comprise particularly 500 DEG C, 550 DEG C, 600 DEG C, 650 DEG C, 680 DEG C, 700 DEG C etc.), backward CVD chamber in pass into Si
2h
6and CH
3siH
3gas, described substrate 100 forms silicon carbide layer 110.
The material of described masking layer 120 can be silicon dioxide layer or silicon nitride layer, and formation method can adopt chemical vapor deposition method (CVD).
In the present embodiment, the material of described masking layer 120 is silicon dioxide layer.The thickness of described silicon dioxide layer 120 is chosen as 100 ~ 1000nm, as 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm.
Masking layer 120 described in subsequent pattern, after silicon carbide layer 110 described in exposed portion, is formed in the technique of graphene layer in exposed described silicon carbide layer 110 surface.Described silicon dioxide layer 120 can part can evaporate, thus the silicon dioxide layer guaranteeing enough thickness is needed, to ensure that the graphene layer of follow-up formation is positioned at the opening sheltering patterned layer of follow-up formation completely, and then guarantee the accuracy of structure of the final graphene pattern formed.The concrete thickness of described silicon carbide layer 110 can be determined according to the process conditions of the thickness of the described silicon carbide layer 110 below it and follow-up formation graphene layer.
With reference to figure 2, etch described silicon dioxide layer 120, formed comprise opening 140 shelter patterned layer 121, described silicon carbide layer 110 surface exposure is in described opening 140.
In the present embodiment, the technique etching described silicon dioxide layer 120 can comprise: first on described silicon dioxide layer 120, form photoresist layer (not shown), after photoresist layer described in photoetching process patterning, with described photoresist layer for silicon dioxide layer described in mask etching 120, this technique is the customary means of those skilled in the art, does not repeat them here.
With reference to figure 3, form graphene layer 130 on the surface of described exposed described silicon carbide layer 110.
In the present embodiment, the method that described graphene layer 130 is formed is chosen as carborundum thermal decomposition method, and its concrete steps can comprise: 10
-6~ 10
-11under the ultravacuum condition of Torr, heating institute silicon carbide layer 110 to 1200 ~ 2000 DEG C, and continue insulation 1 ~ 60 minute, thus form described graphene layer 130.In above-mentioned pyroprocess, take off To body material, and C atom stays surface at the Si atom of described silicon carbide layer 110 exposed part, reconstruct forms graphene layer 130.
In the present embodiment, described graphene layer 130 be only formed at be exposed to described in shelter in the opening 140 of patterned layer 121 graphene growth layer 110 surface, described described graphene growth layer 110 part of sheltering patterned layer 121 covering still ensures good structural form, does not grow graphene layer.That is, the open shape sheltering patterned layer 121 described in directly defines the patterning of the graphene layer 130 that described substrate 100 is formed.
With reference to figure 4, after described graphene layer 130 is formed, described in removal, shelter patterned layer 121, form graphene pattern 150.
In the present embodiment, the method for sheltering patterned layer 121 described in removal can adopt wet etching method.
After sheltering patterned layer 121 described in removal, the smooth of the edge of the described graphene pattern 150 that described substrate 100 is formed, do not occur obvious out-of-flatness phenomenon, the structure of the graphene pattern 150 of formation is intact.Confirm in the follow-up performance of semiconductor device test completed, described graphene pattern 150 has good electric conductivity, illustrates that the carrier mobility that the Graphene of formation in described substrate 100 is good does not obviously reduce.
Embodiment 2
In the present embodiment, the same carborundum thermal decomposition method that adopts forms graphene layer, and compared with the technical scheme in above-described embodiment 1, its difference is only, in the present embodiment, substrate is carborundum, directly in substrate, forms graphene layer.
Fig. 5 ~ 7 are schematic diagrames of the formation method of the present embodiment graphene pattern, and its concrete steps comprise:
With reference to figure 5, provide substrate 200, and patterned layer 123 is sheltered in formation in described substrate 200.
In the present embodiment, described substrate 200 is silicon carbide substrate.
In the present embodiment, described in shelter in patterned layer 123 there is opening 142, the surface exposure of described silicon carbide substrate 200 is in described opening 142.Wherein, described in shelter the formation process of patterned layer 123 similar to the formation process of sheltering patterned layer 121 of embodiment 1, do not repeat them here.The described thickness sheltering patterned layer 123 is 100 ~ 1000nm.
With reference to figure 6, adopt in the silicon carbide substrate 200 of carborundum thermal decomposition method in the opening 142 shown in Fig. 5 and form graphene layer 132.In the present embodiment, form described graphene layer 132 formation process with carborundum thermal decomposition method similar to embodiment 1, do not repeat them here.
With reference to figure 7, described in removal, shelter patterned layer 123, described silicon carbide substrate 200 forms graphene pattern 152.
Embodiment 3
Present invention also offers the formation method of another kind of graphene pattern, the technical scheme of the formation method of itself and the graphene pattern cited by embodiment 1 and 2 is distinguished and is, the formation method of described graphene pattern formed in substrate the opening with bare substrate shelter patterned layer after, substrate surface in described opening forms graphene growth layer, thus forms graphene layer on the surface of graphene growth layer.The formation method of the graphene pattern that the present embodiment provides limits the graphene layer structure of follow-up formation equally with the described hatch frame sheltering patterned layer, avoid the formation of graphene layer formed after further patterning process in, graphene layer sustains damage because of etching, thus guarantees the electric property of the graphene pattern formed.And, after described graphene layer is formed, described graphene growth layer need not be removed, be equivalent to directly in substrate, form graphene layer, thus avoid the transfer of graphene layer, and then guarantee the accuracy of graphene pattern of follow-up formation.
The technical scheme of the formation method of another kind of graphene pattern provided by the invention is set forth further below by specific embodiment.
With reference to figure 8, provide a substrate 300, described substrate 100 is formed and shelters patterned layer 122.
In the present embodiment, described substrate 300 is chosen as silicon base.
In the present embodiment, described in shelter patterned layer 122 and be chosen as silicon nitride layer, described in shelter patterned layer 122 and comprise opening 141.Described shelter patterned layer 122 generation type and structure and embodiment 1 in Fig. 2 shown in shelter patterned layer 121 similar, do not repeat them here.The described thickness sheltering patterned layer 122 is 100 ~ 1000nm.
With reference to figure 9, substrate 300 surface exposed at the described opening 141 sheltering patterned layer 122 forms graphene growth layer 111.
In the present embodiment, described graphene growth layer 111 is chosen as silicon carbide layer, and the thickness of described graphene growth layer 111 be less than described in shelter the thickness of patterned layer 122, namely described graphene growth layer 111 be embedded in completely described in shelter in the opening of opening 141 of patterned layer 122.
In the present embodiment, the formation method of described graphene growth layer 111 is chosen as epitaxy, and its formation process is similar to embodiment 1, does not repeat them here.
But in other embodiments except the present embodiment, 111 samples of described graphene growth layer can adopt the techniques such as chemical vapour deposition technique (CVD) to be formed.But compared to CVD, the graphene growth layer 111(adopting epitaxy to be formed is silicon carbide layer herein) there is more excellent mono-crystalline structures, thus improve the quality of the graphene layer of follow-up formation.
With reference to Figure 10, above described graphene growth layer 111, form graphene layer 131.
In the present embodiment, described graphene layer 131 adopts carborundum thermal decomposition method, and its concrete technology is similar to the formation process of the graphene layer 130 in embodiment 1, does not repeat them here.
With reference to Figure 11, described graphene layer 131 shelters patterned layer 122 after being formed described in removal, forms graphene pattern 151.
In each embodiment above-mentioned, the formation method of two kinds of graphene pattern provided by the invention all adopts carborundum thermal decomposition method directly to form graphene layer being exposed on the carborundum sheltered in the opening of patterned layer.Compared to the formation method of existing graphene pattern, present invention, avoiding for graphene layer, and the etching technics of silicon carbide layer for the formation of graphene layer, thus guarantee the quality of the graphene pattern formed; And, directly form graphene layer on the substrate, directly avoid the transfer step of graphene layer, thus ensure that graphene pattern is in suprabasil accurate location.In addition, in the forming process of graphene pattern, do not adopt extra template, thus effectively save preparation technology's cost of graphene pattern.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (16)
1. a formation method for graphene pattern, comprising: it is characterized in that,
Substrate is provided;
Form masking layer on the substrate, there is in described masking layer the opening exposing described substrate surface;
Substrate surface in described opening forms graphene layer.
Remove described masking layer.
2. the formation method of graphene pattern as claimed in claim 1, it is characterized in that, described substrate is single layer structure or layer stacked structure.
3. the formation method of graphene pattern as claimed in claim 2, it is characterized in that, when described substrate is single layer structure, the material of substrate is carborundum.
4. the formation method of graphene pattern as claimed in claim 2, is characterized in that, when described substrate is layer stacked structure, what be positioned at most top layer is silicon carbide layer.
5. the formation method of the graphene pattern as described in claim 3 or 4, is characterized in that, the formation method of described graphene layer is carborundum thermal decomposition method.
6. the formation method of graphene pattern as claimed in claim 5, it is characterized in that, described carborundum thermal decomposition method comprises:
10
-6~ 10
-11under the ultravacuum environment of Torr, described silicon carbide layer is heated to 1200 ~ 2000 DEG C, be incubated 1 ~ 60 minute, to form graphene layer on described silicon carbide layer surface.
7. the formation method of graphene pattern as claimed in claim 4, it is characterized in that, the method forming described silicon carbide layer is epitaxy.
8. the formation method of graphene pattern as claimed in claim 7, it is characterized in that, described epitaxy comprises:
Under 500 ~ 700 DEG C of conditions, pass into Si
2h
6and CH
3siH
3, form described silicon carbide layer on the substrate.
9. the formation method of graphene pattern as claimed in claim 1, it is characterized in that, the thickness of described masking layer is 100nm to 1000nm.
10. a formation method for graphene pattern, is characterized in that,
Substrate is provided;
Form masking layer on the substrate, there is in described masking layer the opening exposing described substrate surface;
Substrate surface in described opening forms graphene growth layer;
Graphene layer is formed on the surface of described graphene growth layer;
Remove described masking layer.
The formation method of 11. graphene pattern as claimed in claim 10, it is characterized in that, described graphene growth layer is silicon carbide layer.
The formation method of 12. graphene pattern as claimed in claim 11, is characterized in that, the formation method of described graphene layer is carborundum thermal decomposition method.
The formation method of 13. graphene pattern as claimed in claim 12, it is characterized in that, described carborundum thermal decomposition method comprises:
10
-6~ 10
-11under the ultravacuum environment of Torr, described silicon carbide layer is heated to 1200 ~ 2000 DEG C, be incubated 1 ~ 60 minute, to form graphene layer on described silicon carbide layer surface.
The formation method of 14. graphene pattern as claimed in claim 11, is characterized in that, the formation method of described graphene growth layer is epitaxy.
The formation method of 15. graphene pattern as claimed in claim 14, it is characterized in that, described epitaxy comprises:
Under 500 ~ 700 DEG C of conditions, pass into Si
2h
6and CH
3siH
3, the substrate surface in described opening forms described silicon carbide layer.
The formation method of 16. graphene pattern as claimed in claim 10, it is characterized in that, the thickness of described masking layer is 100nm to 1000nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310224082.3A CN104217930B (en) | 2013-06-05 | 2013-06-05 | A kind of forming method of graphene pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310224082.3A CN104217930B (en) | 2013-06-05 | 2013-06-05 | A kind of forming method of graphene pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104217930A true CN104217930A (en) | 2014-12-17 |
| CN104217930B CN104217930B (en) | 2017-08-25 |
Family
ID=52099309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310224082.3A Active CN104217930B (en) | 2013-06-05 | 2013-06-05 | A kind of forming method of graphene pattern |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104217930B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106191802A (en) * | 2016-07-08 | 2016-12-07 | 重庆启越涌阳微电子科技发展有限公司 | The preparation method that selective growth vertical graphite is dilute |
| CN106298470A (en) * | 2015-05-26 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN106941205A (en) * | 2016-01-05 | 2017-07-11 | 中芯国际集成电路制造(上海)有限公司 | Waveguide and forming method thereof |
| CN109079909A (en) * | 2017-06-14 | 2018-12-25 | 张家港康得新光电材料有限公司 | Utilize the product processing method of protective film |
| CN109080877A (en) * | 2017-06-14 | 2018-12-25 | 张家港康得新光电材料有限公司 | Utilize the product processing method of protective film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102190294A (en) * | 2010-03-10 | 2011-09-21 | 中国科学院大连化学物理研究所 | Preparation method for carbon nanotube or graphene nano-carbon material |
| CN102560414A (en) * | 2012-01-03 | 2012-07-11 | 西安电子科技大学 | Method for preparing graphene on 3C-SiC substrate |
| CN102723258A (en) * | 2012-05-22 | 2012-10-10 | 西安电子科技大学 | Method for preparing structured graphene by taking SiC as substrate |
| CN102653885A (en) * | 2012-05-22 | 2012-09-05 | 西安电子科技大学 | Method for preparing structured graphene on 3C-SiC substrate |
-
2013
- 2013-06-05 CN CN201310224082.3A patent/CN104217930B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298470A (en) * | 2015-05-26 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor structure |
| CN106941205A (en) * | 2016-01-05 | 2017-07-11 | 中芯国际集成电路制造(上海)有限公司 | Waveguide and forming method thereof |
| CN106941205B (en) * | 2016-01-05 | 2019-12-31 | 中芯国际集成电路制造(上海)有限公司 | Waveguide and method of forming the same |
| CN106191802A (en) * | 2016-07-08 | 2016-12-07 | 重庆启越涌阳微电子科技发展有限公司 | The preparation method that selective growth vertical graphite is dilute |
| CN109079909A (en) * | 2017-06-14 | 2018-12-25 | 张家港康得新光电材料有限公司 | Utilize the product processing method of protective film |
| CN109080877A (en) * | 2017-06-14 | 2018-12-25 | 张家港康得新光电材料有限公司 | Utilize the product processing method of protective film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104217930B (en) | 2017-08-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102870225B (en) | The manufacture method of back contact solar cell | |
| CN109727846B (en) | Method for preparing two-dimensional molybdenum telluride in-plane heterojunction with metal phase in contact with semiconductor in large area and application | |
| CN103943513B (en) | A kind of method that graphene device is prepared in flexible substrate | |
| US8652944B2 (en) | Method for making side growth semiconductor nanowires and transistors obtained by said method | |
| US8043687B2 (en) | Structure including a graphene layer and method for forming the same | |
| CN104217930A (en) | Method for forming graphene patterns | |
| CN107507828B (en) | Integrated circuit and its manufacturing method with capacitor | |
| CN105206689A (en) | Photoelectric detector preparation method based on thin-film semiconductor-graphene heterojunction | |
| CN102931057A (en) | Graphene field-effect device based on gate dielectric structure and manufacturing method for graphene field-effect device | |
| CN107634099B (en) | Two-dimensional crystal material field effect transistor and preparation method thereof | |
| CN107086180B (en) | Preparation method of single nanowire multichannel multiplexing thin film transistor device | |
| CN107180784A (en) | Semiconductor structure and forming method thereof | |
| CN102915929B (en) | Method for manufacturing graphene field-effect device | |
| CN102945793A (en) | Pre-cleaning method for epitaxial growth of Ge-Si stress layer | |
| CN103377928B (en) | The formation method of semiconductor structure, the formation method of transistor | |
| CN105296958A (en) | Three-dimensional non-catalytic base load graphene film structure and preparation method thereof in low temperature environment | |
| CN101814581B (en) | Method for preparing top gate top contact self-alignment Organic Thin Film Transistor (OTFT) | |
| CN105679676A (en) | Thin film transistor and preparation method therefor, and array substrate | |
| CN105006482A (en) | Preparation method of graphene field effect transistor | |
| CN103258742B (en) | The formation method of transistor | |
| KR101450521B1 (en) | manufacturing method of semiconductor devices with Si trench | |
| Lee et al. | Ultrathin Crystalline Silicon Nano and Micro Membranes with High Areal Density for Low‐Cost Flexible Electronics | |
| CN102110601B (en) | Method for preparing device structure capable of measuring low-frequency CV (capacitance-voltage) curve of MOS (metal-oxide-semiconductor) capacitor | |
| CN102129981A (en) | Manufacturing methods of nanowire and nanowire transistor | |
| CN110504297A (en) | Two-dimensional material transistor, preparation method and application based on two-dimensional electron gas regulation backgate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |