CN104205338A - 高压场效应晶体管及其制作方法 - Google Patents

高压场效应晶体管及其制作方法 Download PDF

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CN104205338A
CN104205338A CN201380014693.3A CN201380014693A CN104205338A CN 104205338 A CN104205338 A CN 104205338A CN 201380014693 A CN201380014693 A CN 201380014693A CN 104205338 A CN104205338 A CN 104205338A
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马丁·克奈普
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Ams Osram AG
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Abstract

一种高压晶体管器件包括具有第一类型电传导率的源极区(2)的半导体衬底(1)、包括与第一类型传导率相反的第二类型电传导率的沟道区(4)的体区(3)、第一类型传导率的漂移区(5)以及第一类型传导率的漏极区(6)，该漏极区(6)以带状结构自沟道区(4)纵向延伸至漏极区(6)并且由隔离区(9)横向地限制。漂移区(5)包括第一类型传导率的掺杂并且包括具有第二类型传导率的净掺杂的附加区(8)以调节漂移区(5)的电特性。漂移区深度和附加区深度不超过隔离区(9)的最大深度(17)。

Description

高压场效应晶体管及其制作方法
本发明涉及可以用低压CMOS技术实现的高压晶体管器件和制造该晶体管器件的方法。
高压器件增长的应用范围使用针对低压设计的CMOS电路。低压晶体管的小的沟道长度是借助于在器件表面处的高掺杂剂浓度来实现的，这使得不能够获得高压器件的RESURF(减小的表面电场)和高击穿电压的状态。期望对高压器件和低压器件进行集成以降低制造成本，但是那样，使用额外的掩模的对准步骤可能是必要的，而该步骤并不为低压器件单独所需。如果高压晶体管的预期应用不需要大的低欧姆驱动器，那么在没有任何额外的工艺光刻对准步骤的情况下来集成高压晶体管和低压晶体管是优选的解决方案。
WO 2009/050669 A2和对应的US 2010/0213517 A1描述了中压/高压半导体器件在CMOS技术内的实现。被设置为漂移区的半导体区被布置在电介质区之间，该电介质区可以是STI(shallow trench isolation,浅槽隔离)区。电传导的栅极延伸(可以是带状或逐渐变细的多晶硅指状物或场板)被布置在电介质区上方并且与电介质区的中间部分和半导体区一起形成电容器。即使漂移区的掺杂浓度高于平常，该栅极延伸也生成意在辅助耗尽漂移区的电势分布。如果由于电介质区的高介电常数和漂移区的高传导率而导致电压主要降落在栅极延伸与漂移区之间，那么该耗尽可能不足够。
本发明的目的是提供一种可以在针对低压器件的标准工艺内制造的高压晶体管器件并且公开该高压晶体管器件的制造方法。
用根据权利要求1所述的高压晶体管器件和根据权利要求10所述的制造高压晶体管器件的方法实现了该目的。实施方式和变型例来源于从属权利要求。
高压晶体管器件包括半导体衬底、距彼此一定距离布置在衬底中的第一类型电传导率的源极区和第一类型电传导率的漏极区、布置在源极区与漏极区之间与第一类型电传导率相反的第二类型电传导率的沟道区、自沟道区纵向延伸至漏极区的带状漂移区以及与漂移区的纵向延伸呈横向的横向地限制漂移区的隔离区。漂移区包括第一类型传导率的掺杂并且包括具有第二类型传导率的净掺杂的调节区。漂移区和调节区不超过隔离区的最大深度。
在高压晶体管器件的实施方式中，调节区被以下述方式逐渐变细以具有不同的横向宽度：调节区的横向宽度在自沟道区朝向漏极区的方向上减小。
在另一实施方式中，隔离区是浅槽隔离。隔离区可以由别的方法代替形成，特别地形成为场氧化区。
在另外的实施方式中，隔离区被以0.3μm与0.7μm之间的范围内的距离或更具体地以更小的0.4μm与0.6μm之间的范围内的距离间隔开。该距离可以与调节区的最大横向宽度相等。
在另一实施方式中，第一类型传导率的漏极接触区被布置在漏极区，漂移区与漏极接触区相邻，而调节区被布置在距漏极接触区的一定距离处。
在另外的实施方式中，多个第一类型传导率的漂移区被彼此平行地布置并且被隔离区分开，该漂移区包括第一类型传导率的掺杂并且包括具有第二类型传导率的净掺杂的调节区。漂移区和调节区不超过隔离区的最大深度。
在另一实施方式中，调节区被以如下方式逐渐变细以具有不同的横向宽度：调节区的横向宽度在自沟道区向漏极区的方向上减小。
在制造高压晶体管器件的方法中，在半导体衬底中形成限制带状区域的隔离区，在带状区域的相对的两端处形成第一类型电传导率的漏极区和与第一类型传导率相反的第二类型电传导率的体区，并且在体区上方形成栅电极。将用于第一类型传导率的掺杂剂以掺杂剂不超过隔离区的最大深度的方式注入到带状区域中。在体区中形成第一类型传导率的源极区。将用于第二类型传导率的掺杂剂以掺杂剂不超过隔离区的最大深度的方式注入到带状区域中并且在调节区中获得第二类型传导率的净掺杂。
在该方法的变型例中，使用特殊的掩模来形成调节区以将用于第二类型传导率的掺杂剂注入到带状区域中。掩模的开口由下述倾斜边缘来限定，该倾斜边缘以与带状区域的纵向延伸既不平行也不垂直的方式在带状区域两端延展。
在该方法的另一变型例中，使用完全覆盖栅电极的掩模来形成调节区。
在该方法的另一变型例中，以相对于栅电极自对准的方式来执行将用于第一类型传导率和第二类型传导率的掺杂剂注入到隔离区之间的带状区域中。
在该方法的另外的变型例中，将多个隔离区彼此平行布置以限制多个平行的带状区域。以在调节区中获得第二类型传导率的净掺杂的方式，将用于第一类型传导率的掺杂剂注入到带状区域中至不超过隔离区的最大深度的最大深度，并且将用于第二类型传导率的掺杂剂注入到带状区域中至不超过隔离区的最大深度的最大深度。
在该方法的另一变型例中，借助于具有多个平行的边的掩模来执行将用于第二类型传导率的掺杂剂注入到带状区域中，该多个平行的边均在相对于带状区域的纵向延伸倾斜的方向上横过带状区域中之一。
下面通过结合附图对示例实施方式进行详细的描述来进一步阐述本发明及其优点。
图1示出了晶体管器件的实施方式的立体剖面图。
图2示出了围绕漂移区的区域的俯视图的一部分。
图3示出了根据图1的制造状态的剖面图。
图4示出了根据图3的另一制造状态的剖面图。
图5示出了图4的将隔离区呈现为好像透明一样的剖面图。
图6示出了覆盖有周期性掩模的晶体管器件的俯视图的一部分。
图7示出了根据图6的具有不同形状的周期性掩模的俯视图的一部分。
图1以立体剖面图示出了高压晶体管器件。该器件包括半导体衬底1，半导体衬底1可以是例如具有掺杂区的硅，掺杂区布置在衬底1的主表面处或主表面附近处。掺杂区包括源极区2、具有形成在其表面区域处的沟道区4的体区3以及自沟道区4延伸至漏极区6的带状漂移区5。源极区2、漂移区5以及漏极区6具有第一类型电传导率。用于外部电接触的漏极接触区7可以如图1中所示设置在与漂移区5相邻的衬底1的表面处，或者可以布置在漏极区6上的距漂移区5一定的距离处。漏极接触区7具有第一类型电传导率并且优选地具有比漏极区6更高的掺杂浓度。漏极接触区7中的更高的掺杂浓度特别地可以通过针对漂移区5的掺杂剂的注入来产生，如果这个注入在漏极区6中同时进行的话。另外地或替代地，可以具有对用于第一类型电传导率的高剂量的专用注入法，特定地用于形成漏极接触区7，该漏极接触区7与漂移区5相邻或者在距漂移区5一定的距离处。体区3被掺杂以具有与第一类型传导率相反的第二类型电传导率。可以通过注入用于相反类型传导率的掺杂剂将体区3和漏极区6制造为掺杂阱。在高压NMOS晶体管中，第一类型传导率为n型传导而第二类型传导率为p型传导。在高压PMOS晶体管中，第一类型传导率是p型传导而第二类型传导率是n型传导。
漂移区5由为片形或条形的半导体材料带形成并且通过布置为距彼此一定距离的隔离区9来横向地限制。这样，通过隔离区9之间的距离来限定漂移区5的横向宽度，隔离区9之间的距离可以是沿着漂移区5的纵向延伸而基本恒定。在图1中，隔离区9被呈现为好像透明一样以便示出漂移区5的形状和位置。漂移区5的上表面可以是基本恒定宽度的带状区域15。该带状区域15可以由薄介电层覆盖，特别地由该半导体材料的氧化物覆盖，该半导体材料的氧化物还可以用作使栅电极与半导体材料绝缘的栅极介质。隔离区9可以通过浅槽隔离(STI)来形成，特别地用该半导体材料的氧化物形成。漂移区5的垂直尺寸或深度不超过隔离区9的最大深度17。这样，漂移区5在其两个横向侧面上完全由隔离区9的边界限定。
漂移区5的电特性由具有第二类型电传导率的净掺杂的调节区8进行修正和调节，调节区8被包括在漂移区5中并且也不超过隔离区9的深度17。调节区8的最大深度可以小于漂移区5的深度，使得如图1中所示第一类型传导率的净掺杂出现在漂移区5的下层部分。可以借助于调节区8在漂移区5内实现分级的电传导。
图2示出了器件的平面图的一部分，该部分包括带状漂移区5的区域，带状漂移区5从与漂移区5的一端抵接的沟道区4纵向延伸至在相对端处的漏极区6或漏极接触区7。漂移区5在其两个横向侧上由隔离区9限定，使得漂移区5的表面为带状区域15。纵向延伸20的方向在图2中用箭头示出。隔离区9之间的距离19可以沿着漂移区5为恒定的。
在根据图1和图2的实施方式中调节区8是逐渐变细的。调节区8的横向宽度18、18'在自沟道区4朝向漏极区6的方向上减小。与漂移区5的纵向延伸20垂直的调节区8的横截面的面积因而随着距沟道区4增加的距离以及距漏极区6减小的距离而减小。
如图2中示出的示例中，调节区8的最大横向宽度18可以与隔离区9之间的距离19相等并且因此与漂移区5的横向宽度相等，或者调节区8的最大横向宽度18可以小于隔离区9之间的距离19。调节区8可以布置在距沟道区4一定的距离处或距漏极区6一定的距离处，或者如根据图1和图2的实施方式中，布置在距沟道区4和漏极区6都有一定的距离处。
图3示出了根据图1的制造该晶体管器件的方法的过程状态的立体剖面图。在半导体衬底1的主表面处，体区3和漏极区6优选地通过注入不同的掺杂剂形成为相反类型传导率的掺杂阱。在体区3与漏极区6之间，隔离区9彼此以一定的距离平行布置。
可以通过蚀刻浅槽将隔离区9形成为浅槽隔离，该浅槽随后用绝缘材料或介电材料填充，特别地用半导体材料的氧化物填充。优选地在掺杂阱的注入前来产生浅槽隔离。在器件的实施方式中，隔离区9之间的距离19可以处于0.3μm与0.7μm之间的范围内或者可以局限于0.4μm与0.6μm之间的范围。例如，距离19典型地可以为0.5μm。
图3示出了衬底1上的在隔离区9之间的薄覆盖层13。覆盖层13可以包括与隔离区9相同的材料，特别地包括半导体材料的氧化物。图3中用虚线将隔离区9和衬底区之间的设置用于漂移区5的边界示出为在覆盖层13下方的隐藏的轮廓。覆盖层13的材料还可以设置为栅极介质14以使布置在沟道区4上方的栅电极10与半导体材料绝缘。栅电极10可以是例如多晶硅。
如图3中箭头所示出，将可以是光刻胶的第一掩模11应用于接下来的将用于第一类型传导率的掺杂剂注入到漂移区5中。该注入优选地以相对于栅电极10自对准的方式来执行。注入深度不超过隔离区9的深度17。
图4示出了根据图3的在第一掩模11已由第二掩模12替代后的另一过程状态的立体剖面图，该第二掩模也可以是光刻胶。限定第二掩模12的开口的横向边16相对于漂移区5的纵向延伸20倾斜地布置，这意味着边16既不平行于也不垂直于漂移区5的纵向延伸20延展。然后如图4中箭头所示，在漂移区5中执行注入用于第二类型传导率的掺杂剂。该注入还可以以相对于栅电极10自对准的方式来执行。注入深度不超过隔离区9的深度17并且可以比先前用于第一类型传导率的掺杂剂的注入要浅。提供用于第二类型传导率的掺杂剂的注入以根据第二掩模12的形状在漂移区5内制造调节区8。
如果第二掩模12的倾斜边缘16横过隔离区9之间的带状区域15的总宽度，那么第二掩模12的对准精度就并不关键，就可以通过对漂移区5的长度进行适当定义将第二掩模12的可能的未对准考虑在内。为漂移区5提供的注入和为调节区8提供的注入反映了漂移区5中的净掺杂浓度，这使得能够以可控的方式使漏极/源极电势下降。
图5示出了根据图4的立体剖面图，其中，类似于图1，隔离区9和覆盖层13被呈现为好像透明一样。图5示出了漂移区5的为片或条的形状以及漂移区5的上表面的未被第二掩模12覆盖的带状区域15的逐渐变细的部分。至少在未覆盖的区域的部分中对通过在先的注入获得的漂移区5的掺杂进行反掺杂，以便形成具有第二类型传导率的净掺杂的调节区8。根据图1和图2中所示出的实施方式，具有由相对于漏极区5倾斜布置的边16限定的开口的第二掩模12的使用产生了调节区8的逐渐变细的形状。
如果高压晶体管器件包括例如高压NMOS晶体管，并且用于漂移区5的施主原子的注入和用于调节区8的受主原子的注入具有几乎相同的深度并因而具有可比较的外形，那么可以通过大于1·112cm-2的有效剂量(施主原子的剂量与受主原子的剂量之间的差)来获得漂移区5中合适的净传导率。如果用于调节区8的受主原子的注入比施主原子的注入浅，那么保持在调节区8以下的施主浓度应该与大于1·112cm-2的剂量相当。
具有更大宽度的器件可以包括彼此平行布置并通过隔离区9将其彼此分开的多个带状漂移区5。如上所述，漂移区5被设置有调节区8。为了制作调节区8，可以借助于具有多个平行开口的第二掩模12将用于第二类型传导率的掺杂剂注入到带状区域15中。图6和图7中示出了示例。
图6示出了在衬底1的用虚线显示轮廓的一部分上方覆盖有第二掩模12的晶体管器件的俯视图的一部分。隔离区9沿着基本同一方向彼此相距一定距离布置在衬底1中并且通过设置为漂移区5的平行带状区域来分开。如果隔离区9彼此之间具有恒定的距离19，那么在图6中由括号示出的漂移区5的带状区域15可以通过平行边界横向地限定。图6中还示出了栅电极10相对于第二掩模12的开口的位置。第二掩模12的开口至少在带状区域15上方具有相对于漂移区5的纵向延伸20倾斜的边界。因此，第二掩模12的倾斜边缘16呈现出如上所述的逐渐变细的调节区8。横过带状区域15的倾斜边缘16的序列优选地为周期性的，使得倾斜边缘16彼此平行并且以相等的距离布置。在图6的示例中，第二掩模12的开口使栅电极10的边的部分未覆盖，使得用于调节区8的掺杂剂的注入为相对于栅电极10自对准。
图7示出了根据图6的第二掩模12的另一实施方式的俯视图的一部分，其中第二掩模12完全覆盖栅电极10。在根据图7的实施方式中，用于调节区8的掺杂剂的注入并不是相对于栅电极10自对准，而是将掺杂剂注入在距栅电极10一定的距离处。取决于所注入的掺杂剂的横向扩散，这一点可以有利于一些实施方式，特别有利于如果注入剂量很高而且/或者注入角度很陡的情况。在这些情况下可以优选图7的示例以确保调节区8的布置不会阻止电荷载流子通过漂移区。
附图标记清单
1.衬底
2.源极区
3.体区
4.沟道区
5.漂移区
6.漏极区
7.漏极接触区
8.调节区
9.隔离区
10.栅电极
11.第一掩模
12.第二掩模
13.覆盖层
14.栅极介质
15.带状区域
16.倾斜边缘
17.隔离区的深度
18.调节区的横向宽度
18'.调节区的横向宽度
19.隔离区之间的距离
20.漂移区的纵向延伸

Claims (15)

1.一种高压晶体管器件，包括：
半导体衬底(1)，
第一类型电传导率的源极区(2)和漏极区(6)，其距彼此一定的距离布置在所述衬底(1)中，
与所述第一类型电传导率相反的第二类型电传导率的沟道区(4)，其布置在所述源极区(2)与所述漏极区(6)之间，
带状漂移区(5)，其自所述沟道区(4)纵向地延伸至所述漏极区(6)，以及
隔离区(9)，其与所述漂移区(5)的纵向延伸(20)呈横向以横向地限制所述漂移区(5)，
其特征在于：
所述漂移区(5)包括所述第一类型传导率的掺杂并且包括具有所述第二类型传导率的净掺杂的调节区(8)，以及
所述漂移区(5)和所述调节区(8)不超过所述隔离区(9)的最大深度(17)。
2.根据权利要求1所述的高压晶体管器件，其中，所述调节区(8)被以如下方式逐渐变细以具有不同的横向宽度(18、18')：所述调节区(8)的所述横向宽度(18、18')在自所述沟道区(4)朝向所述漏极区(6)的方向上减小。
3.根据权利要求1或2所述的高压晶体管器件，其中，所述隔离区(9)为浅槽隔离。
4.根据权利要求1至3中的一项所述的高压晶体管器件，其中，所述隔离区(9)以0.3μm与0.7μm之间范围内的距离(19)间隔开。
5.根据权利要求1至3中的一项所述的高压晶体管器件，其中，所述隔离区(9)以0.4μm与0.6μm之间范围内的距离(19)间隔开。
6.根据权利要求1至5中的一项所述的高压晶体管器件，其中，所述隔离区(9)以与所述调节区(8)的最大横向宽度(18)相等的距离(19)间隔开。
7.根据权利要求1至6中的一项所述的高压晶体管器件，还包括：
布置在所述漏极区(6)处的所述第一类型传导率的漏极接触区(7)，
所述漂移区(5)与所述漏极接触区(7)相邻，以及
所述调节区(8)布置在距所述漏极接触区(7)一定的距离处。
8.根据权利要求1至7中的一项所述的高压晶体管器件，还包括：
所述第一类型传导率的多个漂移区(5)，其彼此平行布置并且被所述隔离区(9)分开，
所述漂移区(5)包括所述第一类型传导率的掺杂并且包括具有所述第二类型传导率的净掺杂的调节区(8)，以及
所述漂移区(5)和所述调节区(8)不超过所述隔离区(9)的最大深度(17)。
9.根据权利要求8所述的高压晶体管器件，其中，所述调节区(8)被以如下方式逐渐变细以具有不同的横向宽度(18、18')：所述调节区(8)的所述横向宽度(18、18')在自所述沟道区(4)朝向所述漏极区(6)的方向上减小。
10.一种制造高压晶体管器件的方法，包括：
在半导体衬底(1)中形成隔离区(9)，所述隔离区(9)限制带状区域(15)，
在所述带状区域(15)的相对的两端处形成第一类型电传导率的漏极区(6)和与所述第一类型传导率相反的第二类型电传导率的体区(3)，
在所述体区(3)上方形成栅电极(10)，
在所述带状区域(15)中注入用于所述第一类型传导率的掺杂剂，以及
在所述体区(3)中形成所述第一类型传导率的源极区(2)，
其特征在于：
以用于所述第一类型传导率的所述掺杂剂不超过所述隔离区(9)的最大深度(17)的方式来执行所述注入；以及
将用于所述第二类型传导率的掺杂剂以这样的方式注入到所述带状区域(15)中：所述掺杂剂不超过所述隔离区(9)的所述最大深度(17)，并且在调节区(8)中获得所述第二类型传导率的净掺杂。
11.根据权利要求10所述的方法，其中
使用具有开口的掩模(12)来形成所述调节区(8)，所述开口由相对于所述带状区域(15)的纵向延伸(20)倾斜地布置的边缘(16)来限定，以将用于所述第二类型传导率的所述掺杂剂注入到所述带状区域(15)中。
12.根据权利要求10或11所述的方法，其中
使用完全覆盖所述栅电极(10)的掩模(12)来形成所述调节区(8)。
13.根据权利要求10或11所述的方法，其中
以相对于所述栅电极(10)自对准的方式来执行将用于所述第一类型传导率和所述第二类型传导率的所述掺杂剂注入到所述隔离区(9)之间的所述带状区域(15)中。
14.根据权利要求10至13中的一项所述的方法，其中
将多个隔离区(9)彼此平行地布置，以限制多个平行的带状区域(15)，
在所述带状区域(15)中，将用于所述第一类型传导率的掺杂剂注入到不超过所述隔离区(9)的所述最大深度(17)的最大深度，以及
以在调节区中获得所述第二类型传导率的净掺杂的方式，在所述带状区域(15)中，将用于所述第二类型传导率的掺杂剂注入到不超过所述隔离区(9)的所述最大深度(17)的最大深度。
15.根据权利要求14所述的方法，其中
借助于具有多个平行的边缘(16)的掩模(12)来执行将用于所述第二类型传导率的所述掺杂剂注入到所述带状区域(15)中，所述多个平行的边缘(16)均在与所述带状区域(15)的纵向延伸(20)倾斜的方向上横过所述带状区域(15)中之一。
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