CN104170076B - 用于毫米波半导体裸片的电子封装 - Google Patents
用于毫米波半导体裸片的电子封装 Download PDFInfo
- Publication number
- CN104170076B CN104170076B CN201380016130.8A CN201380016130A CN104170076B CN 104170076 B CN104170076 B CN 104170076B CN 201380016130 A CN201380016130 A CN 201380016130A CN 104170076 B CN104170076 B CN 104170076B
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- frequency
- circuit board
- electronic packaging
- semiconductor die
- pad
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 238000004100 electronic packaging Methods 0.000 title claims abstract description 37
- 238000005538 encapsulation Methods 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 238000009713 electroplating Methods 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 9
- 208000002925 dental caries Diseases 0.000 claims description 2
- 230000008054 signal transmission Effects 0.000 claims description 2
- 238000012856 packing Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 45
- 239000002184 metal Substances 0.000 abstract description 35
- 229910052751 metal Inorganic materials 0.000 abstract description 35
- 229910000679 solder Inorganic materials 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 9
- 230000005672 electromagnetic field Effects 0.000 abstract description 2
- 230000011664 signaling Effects 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000007639 printing Methods 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- IHIDFKLAWYPTKB-UHFFFAOYSA-N 1,3-dichloro-2-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=C(Cl)C=CC=C1Cl IHIDFKLAWYPTKB-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WZNAMGYIQPAXDH-UHFFFAOYSA-N 1,2,4-trichloro-3-(3-chlorophenyl)benzene Chemical compound ClC1=CC=CC(C=2C(=C(Cl)C=CC=2Cl)Cl)=C1 WZNAMGYIQPAXDH-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
- H01L2223/6633—Transition between different waveguide types
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/433,317 US9219041B2 (en) | 2012-03-29 | 2012-03-29 | Electronic package for millimeter wave semiconductor dies |
US13/433,317 | 2012-03-29 | ||
PCT/IB2013/052434 WO2013144862A1 (en) | 2012-03-29 | 2013-03-27 | Electronic package for millimeter wave semiconductor dies |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104170076A CN104170076A (zh) | 2014-11-26 |
CN104170076B true CN104170076B (zh) | 2017-12-08 |
Family
ID=49233787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380016130.8A Active CN104170076B (zh) | 2012-03-29 | 2013-03-27 | 用于毫米波半导体裸片的电子封装 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9219041B2 (zh) |
CN (1) | CN104170076B (zh) |
DE (1) | DE112013001709B4 (zh) |
GB (1) | GB2515940B (zh) |
WO (1) | WO2013144862A1 (zh) |
Families Citing this family (39)
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JP5443594B2 (ja) * | 2009-05-08 | 2014-03-19 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | チップから導波管ポートへの変換器 |
TWI514533B (zh) * | 2012-03-22 | 2015-12-21 | Hon Hai Prec Ind Co Ltd | 高頻傳輸模組及光纖連接器 |
US9219041B2 (en) * | 2012-03-29 | 2015-12-22 | International Business Machines Corporation | Electronic package for millimeter wave semiconductor dies |
US9232630B1 (en) * | 2012-05-18 | 2016-01-05 | Flextronics Ap, Llc | Method of making an inlay PCB with embedded coin |
KR102105902B1 (ko) * | 2013-05-20 | 2020-05-04 | 삼성전자주식회사 | 방열 부재를 갖는 적층 반도체 패키지 |
US9462703B2 (en) * | 2013-10-02 | 2016-10-04 | International Business Machines Corporation | Solder void reduction between electronic packages and printed circuit boards |
US9478491B1 (en) | 2014-01-31 | 2016-10-25 | Altera Corporation | Integrated circuit package substrate with openings surrounding a conductive via |
US9917372B2 (en) | 2014-06-13 | 2018-03-13 | Nxp Usa, Inc. | Integrated circuit package with radio frequency coupling arrangement |
US10103447B2 (en) | 2014-06-13 | 2018-10-16 | Nxp Usa, Inc. | Integrated circuit package with radio frequency coupling structure |
TWI556698B (zh) * | 2014-08-12 | 2016-11-01 | 旭德科技股份有限公司 | 基板結構及其製作方法 |
US10225925B2 (en) * | 2014-08-29 | 2019-03-05 | Nxp Usa, Inc. | Radio frequency coupling and transition structure |
US9887449B2 (en) * | 2014-08-29 | 2018-02-06 | Nxp Usa, Inc. | Radio frequency coupling structure and a method of manufacturing thereof |
US9564671B2 (en) | 2014-12-28 | 2017-02-07 | International Business Machines Corporation | Direct chip to waveguide transition including ring shaped antennas disposed in a thinned periphery of the chip |
KR102333559B1 (ko) | 2015-05-11 | 2021-12-01 | 삼성전자 주식회사 | 안테나 장치 및 그를 포함하는 전자 장치 |
JP2017121032A (ja) * | 2015-06-30 | 2017-07-06 | 住友電気工業株式会社 | 高周波装置 |
US9913376B2 (en) * | 2016-05-04 | 2018-03-06 | Northrop Grumman Systems Corporation | Bridging electronic inter-connector and corresponding connection method |
WO2018063414A1 (en) * | 2016-10-01 | 2018-04-05 | Intel Corporation | Module installation on printed circuit boards with embedded trace technology |
KR20180044725A (ko) * | 2016-10-24 | 2018-05-03 | 주식회사 엘지화학 | 전류 측정을 위한 션트 저항기 |
FR3062525B1 (fr) * | 2017-02-01 | 2020-11-20 | Inst Vedecom | Antenne a fentes integree dans une carte de circuit imprime et procede de fabrication de celle-ci |
CN107548232A (zh) * | 2017-09-29 | 2018-01-05 | 北京微度芯创科技有限责任公司 | 毫米波雷达芯片和天线的集成封装件 |
US11894322B2 (en) | 2018-05-29 | 2024-02-06 | Analog Devices, Inc. | Launch structures for radio frequency integrated device packages |
US11424196B2 (en) | 2018-06-01 | 2022-08-23 | Analog Devices, Inc. | Matching circuit for integrated circuit die |
CN109121290B (zh) * | 2018-09-05 | 2021-05-07 | 光梓信息科技(上海)有限公司 | 在垂直方向上调节传输线阻抗的结构及方法 |
US10784215B2 (en) * | 2018-11-15 | 2020-09-22 | Steradian Semiconductors Private Limited | Millimeter wave integrated circuit and system with a low loss package transition |
US11417615B2 (en) * | 2018-11-27 | 2022-08-16 | Analog Devices, Inc. | Transition circuitry for integrated circuit die |
US10651541B1 (en) | 2019-02-27 | 2020-05-12 | Nxp Usa, Inc. | Package integrated waveguide |
US11031681B2 (en) | 2019-06-20 | 2021-06-08 | Nxp Usa, Inc. | Package integrated waveguide |
EP3771028A1 (en) | 2019-07-25 | 2021-01-27 | Nxp B.V. | Semiconductor device and method |
US11335652B2 (en) | 2019-07-29 | 2022-05-17 | Nxp Usa, Inc. | Method, system, and apparatus for forming three-dimensional semiconductor device package with waveguide |
US11133578B2 (en) | 2019-09-06 | 2021-09-28 | Nxp B.V. | Semiconductor device package comprising an encapsulated and conductively shielded semiconductor device die that provides an antenna feed to a waveguide |
US11456227B2 (en) * | 2019-12-17 | 2022-09-27 | Nxp Usa, Inc. | Topside heatsinking antenna launcher for an integrated circuit package |
US11276654B2 (en) | 2019-12-17 | 2022-03-15 | Nxp Usa, Inc. | Bottom-side heatsinking waveguide for an integrated circuit package |
US11133273B2 (en) | 2019-12-17 | 2021-09-28 | Nxp Usa, Inc. | Semiconductor device with waveguide and method therefor |
EP3879624B1 (en) | 2020-03-11 | 2022-03-23 | Schleifring GmbH | Stripline connections |
US11735813B2 (en) * | 2020-05-14 | 2023-08-22 | Taoglas Group Holdings Limited | Antenna structures and antenna assemblies that incorporate the antenna structures |
CN113271709B (zh) * | 2021-03-25 | 2022-04-26 | 中国电子科技集团公司第二十九研究所 | 一种金属芯板的多层印制电路叠层结构及封装结构 |
DE102021214166A1 (de) * | 2021-12-10 | 2023-06-15 | Continental Autonomous Mobility Germany GmbH | Radarsensor sowie ein Herstellungsverfahren |
US11744021B2 (en) | 2022-01-21 | 2023-08-29 | Analog Devices, Inc. | Electronic assembly |
CN117133720B (zh) * | 2023-10-26 | 2024-02-23 | 苏州博海创业微***有限公司 | 一种多层陶瓷封装管壳结构及组件 |
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US5982250A (en) * | 1997-11-26 | 1999-11-09 | Twr Inc. | Millimeter-wave LTCC package |
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DE102006007381A1 (de) * | 2006-02-15 | 2007-08-23 | Infineon Technologies Ag | Halbleiterbauelement für einen Ultraweitband-Standard in der Ultrahochfrequenz-Kommunikation und Verfahren zur Herstellung desselben |
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DE112008000985T5 (de) * | 2007-04-13 | 2010-02-04 | Kyocera Corp. | Hochfrequenz-Leiterplatte, Hochfrequenz-Schaltmodul und Radargerät |
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JP5443594B2 (ja) * | 2009-05-08 | 2014-03-19 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | チップから導波管ポートへの変換器 |
JP5444915B2 (ja) | 2009-07-27 | 2014-03-19 | 日本電気株式会社 | 高周波モジュール及び高周波モジュールの製造方法 |
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US8536954B2 (en) | 2010-06-02 | 2013-09-17 | Siklu Communication ltd. | Millimeter wave multi-layer packaging including an RFIC cavity and a radiating cavity therein |
US8912858B2 (en) | 2009-09-08 | 2014-12-16 | Siklu Communication ltd. | Interfacing between an integrated circuit and a waveguide through a cavity located in a soft laminate |
US9219041B2 (en) * | 2012-03-29 | 2015-12-22 | International Business Machines Corporation | Electronic package for millimeter wave semiconductor dies |
US8912634B2 (en) | 2012-03-29 | 2014-12-16 | International Business Machines Corporation | High frequency transition matching in an electronic package for millimeter wave semiconductor dies |
-
2012
- 2012-03-29 US US13/433,317 patent/US9219041B2/en active Active
-
2013
- 2013-03-27 DE DE112013001709.1T patent/DE112013001709B4/de active Active
- 2013-03-27 GB GB1417884.2A patent/GB2515940B/en active Active
- 2013-03-27 CN CN201380016130.8A patent/CN104170076B/zh active Active
- 2013-03-27 WO PCT/IB2013/052434 patent/WO2013144862A1/en active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5982250A (en) * | 1997-11-26 | 1999-11-09 | Twr Inc. | Millimeter-wave LTCC package |
Also Published As
Publication number | Publication date |
---|---|
WO2013144862A1 (en) | 2013-10-03 |
GB2515940B (en) | 2016-03-23 |
US20130256850A1 (en) | 2013-10-03 |
DE112013001709T5 (de) | 2014-12-11 |
DE112013001709B4 (de) | 2020-10-29 |
GB201417884D0 (en) | 2014-11-26 |
GB2515940A (en) | 2015-01-07 |
CN104170076A (zh) | 2014-11-26 |
US9219041B2 (en) | 2015-12-22 |
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