CN104143583A - Method for manufacturing solar cell and solar cell - Google Patents
Method for manufacturing solar cell and solar cell Download PDFInfo
- Publication number
- CN104143583A CN104143583A CN201310165702.0A CN201310165702A CN104143583A CN 104143583 A CN104143583 A CN 104143583A CN 201310165702 A CN201310165702 A CN 201310165702A CN 104143583 A CN104143583 A CN 104143583A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- solar cell
- layer
- semiconductor pattern
- light doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 56
- 239000002019 doping agent Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a solar cell and the solar cell. The method for manufacturing the solar cell comprises the following steps that a first conductive type layer is provided, and the first conductive type layer is provided with an upper surface. Dopant is doped into the first conductive type layer so that a second conductive type layer can be formed below the upper surface of the first conductive type layer. The second conductive type layer is provided with a light doping area. Dopant is doped into the light doping area of the second conductive type layer through a laser doping process so that a semiconductor pattern layer can be formed in the light doping area of the second conductive type layer. The concentration of the dopant of the semiconductor pattern layer is larger than that of the dopant in the light doping area of the second conductive type layer.
Description
Technical field
The invention relates to a kind of silica-based solar cell and manufacture method thereof.
Background technology
Solar cell is a kind of eco-friendly power source, can directly solar energy be converted to electric energy.Owing to not producing carbon dioxide isothermal chamber gas in power generation process, therefore can be to environment.In the time that irradiation is on solar cell, utilize the characteristic of its optoelectronic semiconductor, make free electron effect in photon and conductor or semiconductor and generation current.Current existing solar cell can be divided into silicon-based semiconductor solar cell, DSSC and organic material solar cell according to the difference of material of main part.Wherein better with the photoelectric conversion efficiency of silicon-based semiconductor solar cell again, but still the space being improved.
Basic silicon-based semiconductor solar battery structure can comprise the first conductive layer and the second conductive layer.It is for example P type substrate and n type semiconductor layer that the first conductive layer and the second conductive layer can be distinguished.Normally multi-disc P type substrate is inserted in high temperature furnace pipe, then pass into phosphorus oxychloride (POCl
3) and oxygen, form one deck n type semiconductor layer with the below in P type substrate surface.But because multi-disc P type substrate is to carry out thermal diffusion processing procedure in compact arranged situation, therefore some region on P type substrate cannot effectively contact POCl
3with oxygen.So will cause the dopant concentration in these regions lower, resistance is higher, makes the transverse impedance of n type semiconductor layer entirety higher.In view of this, need at present a kind of manufacture method of solar cell of novelty badly, to improving the problems referred to above.
Summary of the invention
The object of the present invention is to provide a kind of method and solar cell of manufacturing solar cell.
An aspect of of the present present invention provides a kind of method of manufacturing solar cell, and it comprises the following steps.One first conductive layer is provided, and the first conductive layer has a upper surface.Adulterate in admixture to the first conductive layer, form one second conductive layer with the below of the upper surface in the first conductive layer, wherein the second conductive layer has a light doping section.Utilize in the light doping section of laser doping processing procedure doping admixture to the second conductive layer, to form semiconductor patterned layer in the light doping section of the second conductive layer, wherein the dopant concentration of semiconductor pattern layer is greater than the dopant concentration of the light doping section of the second conductive layer.
According to an embodiment of the present invention, the resistance of the light doping section of the second conductive layer is more than or equal to approximately 130 ohm-sq (Ω/).
According to an embodiment of the present invention, the resistance of semiconductor pattern layer is between extremely approximately 90 ohm-sq of approximately 50 ohm-sq.
According to an embodiment of the present invention, the degree of depth of semiconductor pattern layer is greater than the degree of depth of the second conductive layer.
According to an embodiment of the present invention, manufacture method is also included in and forms after semiconductor pattern layer, forms multiple finger electrodes and contact the upper surface of the first conductive layer.
According to an embodiment of the present invention, manufacture method also comprises utilizes another laser doping processing procedure to form a selectivity emitter-base bandgap grading in the second conductive layer, and wherein the dopant concentration of selectivity emitter-base bandgap grading is greater than the dopant concentration of semiconductor pattern layer.
According to an embodiment of the present invention, the laser power of laser doping processing procedure is less than the laser power of another laser doping processing procedure.
Another aspect of the present invention provides a kind of solar cell, and it comprises the first conductive layer, the second conductive layer and semiconductor pattern layer.The first conductive layer has a upper surface.The second conductive layer is positioned at the below of the upper surface of the first conductive layer, and wherein the second conductive layer has a light doping section.Semiconductor pattern layer is arranged in the light doping section of the second conductive layer, and wherein the dopant concentration of semiconductor pattern layer is greater than the dopant concentration of the light doping section of the second conductive layer, and semiconductor pattern layer is utilize laser doping processing procedure and form.
According to an embodiment of the present invention, the resistance of the light doping section of the second conductive layer is more than or equal to approximately 130 ohm-sq.
According to an embodiment of the present invention, the resistance of semiconductor pattern layer is between extremely approximately 90 ohm-sq of approximately 50 ohm-sq.
According to an embodiment of the present invention, the degree of depth of semiconductor pattern layer is greater than the degree of depth of the second conductive layer.
According to an embodiment of the present invention, multiple finger electrode contacts the upper surface of the first conductive layer.
According to an embodiment of the present invention, solar cell also comprises that multiple selectivity emitter-base bandgap gradings are arranged in the second conductive layer, and wherein the dopant concentration of selectivity emitter-base bandgap grading is greater than the dopant concentration of semiconductor pattern layer.
According to above-mentioned, by forming semiconductor pattern layer in the light doping section of the second conductive layer, to reduce the resistance of light doping section of the second conductive layer.Thus, can reduce the transverse impedance of the second conductive layer entirety, increase the transmission path of carrier, and then promote the photoelectric conversion efficiency of battery.
Brief description of the drawings
Fig. 1 is the flow chart illustrating according to the manufacture method of a kind of solar cell of an embodiment of the present invention;
Fig. 2, Fig. 3 A-Fig. 3 B, Fig. 4 A-Fig. 4 B, Fig. 5 A-Fig. 5 B are the schematic diagrames illustrating according to each process stage of the manufacture method of a kind of solar cell of an embodiment of the present invention;
Fig. 6, Fig. 7 are the generalized sections illustrating according to the process stage of the manufacture method of a kind of solar cell of another execution mode of the present invention.
Embodiment
In order to make narration of the present invention more detailed and complete, below for embodiments of the present invention and specific embodiment illustrative description has been proposed; But this not implements or uses unique form of the specific embodiment of the invention.Disclosed each embodiment below can mutually combine or replace under useful situation, also can add in one embodiment other embodiment, and need not further record or illustrate.
In the following description, many specific detail will be described in detail so that reader can fully understand following embodiment.But, can without these specific detail in the situation that, put into practice embodiments of the invention.In other cases, for simplifying accompanying drawing, the structure of knowing is only schematically illustrated in figure with device.
An aspect of of the present present invention provides a kind of method of manufacturing solar cell.Fig. 1 is the flow chart illustrating according to the manufacture method 100 of a kind of solar cell of an embodiment of the present invention.Fig. 2, Fig. 3 A-Fig. 3 B, Fig. 4 A-Fig. 4 B are the schematic diagrames that illustrates each process stage of the manufacture method 100 of solar cell.
In step 10, provide one first conductive layer 110, as shown in Figure 2.The first conductive layer 110 has relative upper surface 110a and lower surface 110b.The first conductive layer 110 can be silicon substrate, for example monocrystalline silicon substrate, polycrystalline silicon substrate or amorphous silicon substrate.In different embodiment, the first conductive layer 110 can be the substrate of P type or N-type.In one embodiment, the upper surface 110a of the first conductive layer 110 is carried out to alligatoring processing procedure, to reduce the reflectivity of incident light.For example can use chemical acid etching processing procedure (etching solvent is for example hydrofluoric acid or nitric acid) or chemical alkaline etch process (etching solvent is for example potassium hydroxide or isopropyl alcohol) to carry out alligatoring processing procedure to the upper surface 110a of the first conductive layer 110.
In step 20, as shown in Fig. 3 A-Fig. 3 B, in doping admixture to the first conductive layer 110, form one second conductive layer 120 with the below of the upper surface 110a in the first conductive layer 110.The second conductive layer 120 has a light doping section 120a.Fig. 3 A be illustrate light doping section 120a on look schematic diagram.Fig. 3 B is the generalized section illustrating along 3B-3B ' line segment in Fig. 3 A.For example can, by admixture thermal diffusion to the first conductive layer 110, form the second conductive layer 120 with the part near upper surface 110a in the first conductive layer 110.But in this step, may there is the mentioned problem of prior art, make to form the light doping section 120a that dopant concentration is lower in the second conductive layer 120, cause the transverse impedance of the second conductive layer 120 entirety higher (uniformity is not good).Therefore, embodiments of the present invention utilize laser doping processing procedure to form semiconductor pattern layer (being following step 30) in the 120a of light doping section, to reduce the resistance of light doping section 120a, and then the transverse impedance of reduction the second conductive layer 120 entirety.In one embodiment, the first conductive layer 110 is P type substrate, and admixture is N-type admixture, as phosphorus base acid (HPO
x).In another embodiment, the first conductive layer 110 is N-type substrate, and admixture is P type admixture, as boric acid (H
3pO
3).In one embodiment, the dopant concentration of light doping section 120a is for being less than approximately 10
16atom/cm
3, the dopant concentration in the region beyond the 120a of light doping section is approximately 10
16to approximately 10
17atom/cm
3.In one embodiment, the resistance of light doping section 12Oa is more than or equal to approximately 130 ohm-sq (Ω/), and the resistance in the region beyond the 12Oa of light doping section is between approximately 90 to approximately 130 ohm-sq.In this manual, " resistance " word refers to sheet resistance or film resistor (Sheet Resistance, Rs).
In step 30, as shown in Fig. 4 A-Fig. 4 B, utilize in the light doping section 120a of laser doping processing procedure doping admixture to the second conductive layer 120, to form semiconductor patterned layer 130 in the light doping section 120a of the second conductive layer 120.Fig. 4 A be illustrate semiconductor pattern layer 130 on look schematic diagram.Fig. 4 B is the generalized section illustrating along 4B-4B ' line segment in Fig. 4 A.The dopant concentration of semiconductor pattern layer 130 is greater than the dopant concentration of the light doping section 120a of the second conductive layer 120.In the 120a of light doping section, can reduce the resistance of light doping section 120a therefore form semiconductor pattern layer 130, and then effectively reduce the transverse impedance of the second conductive layer 120 entirety.In one embodiment, the dopant concentration of semiconductor pattern layer 130 is approximately 10
17to approximately 10
18atom/cm
3, resistance is between extremely approximately 90 ohm-sq of approximately 50 ohm-sq.In one embodiment, the depth d 2 of semiconductor pattern layer 130 is greater than the depth d 1 of the second conductive layer 120, as shown in Figure 4 B.In one embodiment, the depth d 2 of semiconductor pattern layer 130 is 320nm, and the depth d 1 of the second conductive layer 120 is 125nm.As for shape and the laser process parameter of semiconductor pattern layer 130, can determine according to the distribution of dopant concentration or resistance value in the second conductive layer 120, do not limited at this.For instance, the upper end out line of semiconductor pattern layer 130 can be lattice shape, as shown in Figure 4 A.In one embodiment, the laser power of laser doping processing procedure is less than or equal to 130 μ J.
The embodiment that is phosphorus admixture for admixture is below described in further detail.In step 20, as shown in Figure 3 B, can be by the thermal diffusion of phosphorus admixture to the first conductive layer 110 of P type, to form the second conductive layer 120.Now can form the upper surface 110a that phosphorosilicate glass (Phosphorous Silicate Glass, PSG) layer (not illustrating) covers the first conductive layer 110 simultaneously.Then in step 30, as shown in Figure 4 B, carry out laser doping processing procedure, directly the phosphorus admixture in phosphorosilicate glass layer is doped in the light doping section 120a of the second conductive layer 120, to form semiconductor pattern layer 130.Therefore carry out again thermal diffusion processing procedure to form the process of semiconductor pattern layer after forming pattern material layer, utilize laser doping processing procedure directly to form semiconductor pattern layer 130 comparatively easy fast.
On the other hand, the semiconductor pattern layer 130 being arranged in the 120a of light doping section can provide the more transmission paths of carrier through this region, and can improve the photoelectric conversion efficiency of battery.Therefore in other embodiments, can utilize laser doping processing procedure to form the region of semiconductor pattern layer 130 beyond the 120a of light doping section, further to increase the photoelectric conversion efficiency of battery.
After step 30, form multiple finger electrodes 140 and contact the upper surface 110a of the first conductive layer 110, as shown in Fig. 5 A-Fig. 5 B.Finger electrode 140 can utilize any known manufacturing method thereof to make.In one embodiment, there is one deck phosphorosilicate glass layer the top of the upper surface 110a of the first conductive layer 110, therefore before forming finger electrode 140, need first get rid of phosphorosilicate glass layer.In one embodiment, forming before finger electrode 140, first form the upper surface 110a of anti-reflecting layer (not illustrating) contact the first conductive layer 110.For example can utilize electricity slurry chemical vapour deposition technique to form anti-reflecting layer, recycling elargol wire mark and high temperature process form finger electrode 140 in the top of the upper surface 110a of the first conductive layer 110.Certainly,, in the time forming multiple finger electrode 140, can form bus electrode (not illustrating) simultaneously.The follow-up back electrode (not illustrating) that forms is on the lower surface 110b of the first conductive layer 110.Back electrode can utilize any known manufacturing method thereof to make, therefore be not repeated herein.
Fig. 6, Fig. 7 are the generalized sections illustrating according to the process stage of the manufacture method of a kind of solar cell of another execution mode of the present invention.In the present embodiment, subsequent steps 20, the front of step 30 (forming semiconductor pattern layer 130) or after, utilize another laser doping processing procedure to form selectivity emitter-base bandgap grading 150 in the second conductive layer 120, as shown in Figure 6.Selectivity emitter-base bandgap grading 150 can be formed at wish form finger electrode position under.After form again multiple finger electrode 140 corresponding selection emitter-base bandgap gradings 150, as shown in Figure 7.Due to the lower surface contact selectivity emitter-base bandgap grading 150 of finger electrode 140, therefore there is extremely low contact resistance between finger electrode 140 and selectivity emitter-base bandgap grading 150, contribute to further to promote the photoelectric conversion efficiency of battery.The dopant concentration of above-mentioned selectivity emitter-base bandgap grading 150 is greater than the dopant concentration of semiconductor pattern layer 130.Therefore the laser power of the laser doping processing procedure in step 30 is less than the laser power of the laser doping processing procedure that forms selectivity emitter-base bandgap grading 150.In one embodiment, the dopant concentration of selectivity emitter-base bandgap grading 150 is for being greater than approximately 10
18atom/cm
3, resistance is between extremely approximately 50 ohm-sq of approximately 10 ohm-sq.In one embodiment, the laser power of the laser doping processing procedure of formation selectivity emitter-base bandgap grading 150 is greater than 180 μ J.In one embodiment, the depth d 3 of selectivity emitter-base bandgap grading 150 is greater than the depth d 1 of the second conductive layer 120 and the depth d 2 of semiconductor pattern layer 130.In one embodiment, the depth d 3 of selectivity emitter-base bandgap grading 150 is 450nm, and the depth d 2 of semiconductor pattern layer 130 is 320nm, and the depth d 1 of the second conductive layer 120 is 125nm.
Comprehensively above-mentioned, embodiments of the present invention form semiconductor pattern layer in the light doping section of the second conductive layer by laser doping processing procedure, to reduce the resistance of light doping section of the second conductive layer.Thus, can reduce the transverse impedance of the second conductive layer entirety, increase the transmission path of carrier, and then promote the photoelectric conversion efficiency of battery.
Although the present invention discloses as above with execution mode; so it is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (13)
1. a method of manufacturing solar cell, is characterized in that, comprises:
One first conductive layer is provided, and this first conductive layer has a upper surface;
Adulterate an admixture to this first conductive layer, form one second conductive layer with the below of this upper surface in this first conductive layer, wherein this second conductive layer has a light doping section; And
Utilize a laser doping processing procedure to adulterate this admixture to this light doping section of this second conductive layer, to form semiconductor patterned layer in this light doping section of this second conductive layer, wherein the dopant concentration of this semiconductor pattern layer is greater than the dopant concentration of this light doping section of this second conductive layer.
2. the method for manufacture solar cell according to claim 1, is characterized in that, the resistance of this light doping section of this second conductive layer is more than or equal to 130 ohm-sq.
3. the method for manufacture solar cell according to claim 1, is characterized in that, the resistance of this semiconductor pattern layer is between 50 ohm-sq to 90 ohm-sq.
4. the method for manufacture solar cell according to claim 1, is characterized in that, the degree of depth of this semiconductor pattern layer is greater than the degree of depth of this second conductive layer.
5. the method for manufacture solar cell according to claim 1, is characterized in that, is also included in and forms after this semiconductor pattern layer, forms multiple finger electrodes and contact this upper surface of this first conductive layer.
6. the method for manufacture solar cell according to claim 1, it is characterized in that, also comprise and utilize another laser doping processing procedure to form a selectivity emitter-base bandgap grading in this second conductive layer, wherein the dopant concentration of this selectivity emitter-base bandgap grading is greater than this dopant concentration of this semiconductor pattern layer.
7. the method for manufacture solar cell according to claim 6, is characterized in that, the laser power of this laser doping processing procedure is less than the laser power of this another laser doping processing procedure.
8. a solar cell, is characterized in that, comprises:
One first conductive layer, has a upper surface;
One second conductive layer, is positioned at the below of this upper surface of this first conductive layer, and wherein this second conductive layer has a light doping section; And
Semiconductor patterned layer, is arranged in this light doping section of this second conductive layer, and wherein the dopant concentration of this semiconductor pattern layer is greater than the dopant concentration of this light doping section of this second conductive layer, and this semiconductor pattern layer is utilize laser doping processing procedure and form.
9. solar cell according to claim 8, is characterized in that, the resistance of this light doping section of this second conductive layer is more than or equal to 130 ohm-sq.
10. solar cell according to claim 8, is characterized in that, the resistance of this semiconductor pattern layer is between 50 ohm-sq to 90 ohm-sq.
11. solar cells according to claim 8, is characterized in that, the degree of depth of this semiconductor pattern layer is greater than the degree of depth of this second conductive layer.
12. solar cells according to claim 8, is characterized in that, also comprise that multiple finger electrodes contact this upper surface of this first conductive layer.
13. solar cells according to claim 8, is characterized in that, also comprise that multiple selectivity emitter-base bandgap gradings are arranged in this second conductive layer, and wherein the dopant concentration of this selectivity emitter-base bandgap grading is greater than this dopant concentration of this semiconductor pattern layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310165702.0A CN104143583B (en) | 2013-05-08 | 2013-05-08 | Manufacture method and the solaode of solaode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310165702.0A CN104143583B (en) | 2013-05-08 | 2013-05-08 | Manufacture method and the solaode of solaode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104143583A true CN104143583A (en) | 2014-11-12 |
| CN104143583B CN104143583B (en) | 2016-08-03 |
Family
ID=51852717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310165702.0A Expired - Fee Related CN104143583B (en) | 2013-05-08 | 2013-05-08 | Manufacture method and the solaode of solaode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104143583B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357808A (en) * | 1999-06-16 | 2000-12-26 | Kanegafuchi Chem Ind Co Ltd | Silicon thin-film photoelectric conversion device and its manufacture |
| CN102222717A (en) * | 2010-04-16 | 2011-10-19 | 益通光能科技股份有限公司 | Method for forming solar cell |
| TW201240108A (en) * | 2011-01-10 | 2012-10-01 | Applied Materials Inc | Integrated in-line processing system for selective emitter solar cells |
| WO2012135915A1 (en) * | 2011-04-07 | 2012-10-11 | Newsouth Innovations Pty Limited | Hybrid solar cell contact |
| JP2012234856A (en) * | 2011-04-28 | 2012-11-29 | Sanyo Electric Co Ltd | Photoelectric conversion device |
| WO2012172226A1 (en) * | 2011-06-17 | 2012-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for producing a photovoltaic cell having a selective emitter |
| WO2013000026A1 (en) * | 2011-06-30 | 2013-01-03 | Newsouth Innovations Pty Limited | Dielectric structures in solar cells |
| CN103050568A (en) * | 2011-10-13 | 2013-04-17 | 三星Sdi株式会社 | Method of manufacturing a photoelectric device |
-
2013
- 2013-05-08 CN CN201310165702.0A patent/CN104143583B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357808A (en) * | 1999-06-16 | 2000-12-26 | Kanegafuchi Chem Ind Co Ltd | Silicon thin-film photoelectric conversion device and its manufacture |
| CN102222717A (en) * | 2010-04-16 | 2011-10-19 | 益通光能科技股份有限公司 | Method for forming solar cell |
| TW201240108A (en) * | 2011-01-10 | 2012-10-01 | Applied Materials Inc | Integrated in-line processing system for selective emitter solar cells |
| WO2012135915A1 (en) * | 2011-04-07 | 2012-10-11 | Newsouth Innovations Pty Limited | Hybrid solar cell contact |
| JP2012234856A (en) * | 2011-04-28 | 2012-11-29 | Sanyo Electric Co Ltd | Photoelectric conversion device |
| WO2012172226A1 (en) * | 2011-06-17 | 2012-12-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for producing a photovoltaic cell having a selective emitter |
| WO2013000026A1 (en) * | 2011-06-30 | 2013-01-03 | Newsouth Innovations Pty Limited | Dielectric structures in solar cells |
| CN103050568A (en) * | 2011-10-13 | 2013-04-17 | 三星Sdi株式会社 | Method of manufacturing a photoelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104143583B (en) | 2016-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201812825U (en) | Front contact solar cell with formed emitter | |
| CN202094163U (en) | Front face contact solar cell with shaped conducting layers on front face and back face | |
| JP6352233B2 (en) | Solar cell and manufacturing method thereof | |
| KR100997113B1 (en) | Solar Cell and Method for Manufacturing thereof | |
| CN102468365B (en) | Manufacturing method for double-face solar cell | |
| TWI542028B (en) | Method for forming patterns of differently doped regions | |
| CN102800716B (en) | Solar battery and manufacturing method thereof | |
| CN103117329B (en) | Hetero-junctions MWT battery and preparation method thereof, slide glass boat | |
| CN111063759A (en) | Preparation process of solar cell | |
| CN105122461A (en) | Method for producing solar cell | |
| CN111106188B (en) | N-type battery, preparation method of selective emitter of N-type battery and N-type battery | |
| JP2016086149A (en) | Manufacturing method of solar cell | |
| TWI695518B (en) | Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency | |
| KR101165915B1 (en) | Method for fabricating solar cell | |
| CN103137781B (en) | The manufacture method of the solaode of tool bending buried electrode line and this solaode | |
| CN103618025B (en) | A kind of crystalline silicon back junction solar battery preparation method | |
| KR101054985B1 (en) | Method for fabricating solar cell | |
| CN102683504B (en) | The method of crystal silicon solar energy battery manufacture craft is improved by ion implantation arsenic | |
| CN115692516A (en) | Novel TOPCON battery and manufacturing method thereof | |
| TWI699901B (en) | High photoelectric conversion efficiency solar cell and manufacturing method of high photoelectric conversion efficiency solar cell | |
| KR101089992B1 (en) | Method for forming selective emitter in a solar cell | |
| CN104143583B (en) | Manufacture method and the solaode of solaode | |
| CN102737964B (en) | Crystal wafer and diffusion method thereof | |
| KR102487510B1 (en) | Solar cell fabricated by simplified deposition process | |
| CN103107234B (en) | Heterojunction solar battery and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160803 Termination date: 20190508 |