CN103117329B - Hetero-junctions MWT battery and preparation method thereof, slide glass boat - Google Patents
Hetero-junctions MWT battery and preparation method thereof, slide glass boat Download PDFInfo
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- CN103117329B CN103117329B CN201310051273.4A CN201310051273A CN103117329B CN 103117329 B CN103117329 B CN 103117329B CN 201310051273 A CN201310051273 A CN 201310051273A CN 103117329 B CN103117329 B CN 103117329B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention provides the manufacture method of a kind of hetero-junctions MWT battery, including providing substrate；Mask sheet is used to be blocked completely by the via of substrate back, at the formation back side, the back side doped layer of substrate, backside conductive layer, back electrode layer；Remove mask sheet, in via, fill conductive material, form front gate line in substrate face, form contact area at substrate back, front gate line is electrical connected with contact area by the conductive material in via, and contact area is electrically insulated with back side doped layer, backside conductive layer and back electrode layer.Manufacture method provided by the present invention, mask sheet is used to be blocked completely battery front side grid line contact area overleaf, each film layer is made again at substrate back, achieve the selectively formed of the back side each film layer, fundamentally stop the short circuit problem in rear-face contact district and the back side each film floor, increasing other step without extra, processing technology the most easily realizes, and reduces production cost relative to prior art.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, it relates to a kind of hetero-junctions MWT electricity
Pond and preparation method thereof, slide glass boat.
Background technology
Solaode is a kind of semiconductor device that the luminous energy of the sun is converted into electric energy.Due to it
It is Green Product, will not cause environmental pollution, and utilize is Renewable resource, so working as
Under modern energy starved situation, solaode has vast potential for future development.
The kind of solaode is varied, wherein, hetero-junction solar cell is low with its preparation technology temperature,
Conversion efficiency is high, low cost and other advantages is favored by the most more and more.MWT(metal winding)
Technology is also a kind of development trend of current technical field of solar batteries, can not only promote the light of battery
Photoelectric transformation efficiency, more importantly it has advantage at solar module manufacture view.
MWT technology is introduced in the making of hetero-junction solar cell, just obtained hetero-junctions MWT battery, tradition
The structure of hetero-junctions MWT battery as it is shown in figure 1, include: substrate 101, be positioned at the front of substrate face
Passivation doped layer 102, front TCO(transparent conductive film) 103 and front gate line 107, it is positioned at the substrate back of the body
The passivating back doped layer 104 in face, back side TCO105, back electrode layer 106 and contact area 108；Wherein
Front gate line 107 is by the electrical phase in contact area 108 of the conductive material in via on substrate with substrate back
Even, backplate 106 is realized and being electrically insulated of contact area 108 by gap 109.
In prior art, generally use and the method that the structure grown is cut off is realized back side electricity
Pole 106 is electrically insulated with contact area 108, but, find during actual fabrication, said method work
Skill difficulty is higher, and then causes the manufacture method technology difficulty of hetero-junctions MWT battery higher.
Summary of the invention
The invention provides a kind of hetero-junctions MWT battery and preparation method thereof, slide glass boat, to reach to simplify
The purpose of hetero-junctions MWT battery processing technology.
For achieving the above object, the technical scheme is that
A kind of manufacture method of hetero-junctions MWT battery, including: substrate, the front of described substrate are provided
Being coated with front passivation layer, the back side is coated with backside passivation layer, and described substrate has at least one and runs through
Himself, front passivation layer and the via of backside passivation layer；Use mask sheet by the mistake of described substrate back
Hole is blocked completely, at the formation back side, the back side doped layer of substrate, in described back side doped layer away from substrate one
Form backside conductive layer on the surface of side, the surface of described backside conductive layer away from substrate side is formed
Back electrode layer；Remove described mask sheet, in described via, fill conductive material, and in substrate face
Form front gate line, do not covered by back side doped layer, backside conductive layer and back electrode layer at substrate back
Formation contact area, region, described front gate line is by the conductive material in described via and described contact area
It is electrical connected, and described contact area is electrical with described back side doped layer, backside conductive layer and back electrode layer
Insulation.
Preferably, the process that the via of described substrate back is blocked by described employing mask sheet completely is, will
Described substrate is placed on slide glass boat, and described slide glass boat includes frame, is positioned at the region that described frame surrounds
At least one mask sheet and the supporting construction that is connected with described mask sheet and frame, described substrate back
Via blocked completely by described mask sheet.
Preferably, the area of the substrate back that described mask sheet is blocked is blocked more than described contact area
The area of substrate back.
Preferably, the described formation back side, the back side doped layer at substrate, with described at described back side doped layer
Formed between backside conductive layer on the surface of away from substrate side, also include: just formed in the front of substrate
Face doped layer；The surface of doped layer away from substrate side, described front is formed front side conductive layer.
Preferably, described backside passivation layer, back side doped layer, backside conductive layer, back electrode layer, just
The formation process of face passivation layer, front doped layer and front side conductive layer is identical or different, described formation process
For chemical vapor deposition or physical vapor deposition.
Preferably, described conductive material of filling in described via, and at substrate face formation front gate line,
Formed in the region that substrate back is not covered by back side doped layer, backside conductive layer and back electrode layer and contact
The process in district is, uses silk-screen printing technique to fill conductive material in described via, and in substrate face
Printing front gate line, is not covered by back side doped layer, backside conductive layer and back electrode layer at substrate back
Printing contact area, region.
Present invention also offers a kind of slide glass boat, be applied to the making side described in any one of claim 1～6
Method, described slide glass boat include frame, at least one the mask sheet being positioned at the region that described frame surrounds and
The supporting construction being connected with described mask sheet and frame；The face of the substrate back that described mask sheet is covered
The long-pending area more than the substrate back shared by described via, described mask sheet is for blocking described substrate completely
The via at the back side.
Preferably, described mask sheet is circular.
Preferably, the supporting construction of described slide glass boat includes a plurality of formation cancellated support line, described
Mask sheet is positioned at the point of intersection of described support line.
Present invention also offers a kind of hetero-junctions MWT battery, including: substrate, just covering described substrate
The front passivation layer in face, covers the backside passivation layer of described substrate back, at least one run through described substrate,
Front passivation layer and the via of backside passivation layer；It is located at the back side doped layer of described substrate back, is positioned at
Backside conductive layer on the surface of doped layer away from substrate side, the described back side, is located at the described back side and leads
Back electrode layer on the surface of electric layer away from substrate side；It is positioned at the conductive material of described via, position
In the front gate line of substrate face, it is positioned at substrate back not by back side doped layer, backside conductive layer and the back side
The contact area on region that electrode layer covers, described front gate line by the conductive material in described via with
Described contact area is electrical connected, and described contact area and described back side doped layer, backside conductive layer and the back side
Electrode layer is electrically insulated.
Preferably, described hetero-junctions MWT battery also includes: cover the front doped layer in substrate face；
Cover the front side conductive layer on the surface of doped layer away from substrate side, described front.
Compared with prior art, technical scheme provided by the present invention at least has the advantage that
The manufacture method of hetero-junctions MWT battery provided by the present invention, uses mask sheet by battery front side
Grid line contact area overleaf blocks completely, then make on substrate back side doped layer, backside conductive layer and
Back electrode layer, it is achieved that back side doped layer, backside conductive layer and back electrode layer selectively formed,
Visible, the manufacture method of hetero-junctions MWT battery provided by the present invention make during the most
Fundamentally stopped front gate line the contact area of cell backside and back side doped layer, backside conductive layer and
The short circuit problem of back electrode layer, it is not necessary to the extra step making them be electrically insulated increasing other, makes
Technique the most easily realizes.
Further, since the manufacture method of hetero-junctions MWT battery provided by the present invention increases without extra
Other step just can realize contact area and be electrically insulated with back side doped layer, backside conductive layer and back electrode layer,
The most just save equipment, material and the manpower etc. needed for the step of extra increase, thus relative to existing
Technology is had to reduce production cost.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the profile of prior art hetero-junctions MWT battery；
The each step of manufacture method of the hetero-junctions MWT battery that Fig. 2-Fig. 5 is provided by the embodiment of the present invention
Profile；
The load used in the manufacture method of the hetero-junctions MWT battery that Fig. 6 is provided by the embodiment of the present invention
The top view of sheet boat.
Detailed description of the invention
As described in background, prior art uses the side structure grown cut off
Method realizes being electrically insulated of backplate and contact area, but, it is higher that the technique of this method realizes difficulty,
The manufacture method technology difficulty further resulting in hetero-junctions MWT battery is higher.
Inventor it has been investigated that, cause the method technique being electrically insulated realizing backplate and contact area
The main cause that difficulty is high is: cuts off hetero-junctions MWT battery structure in prior art and typically uses
Laser technology, and the structures such as passivation doped layer, TCO and the back electrode layer in structure are nanometer
The thin film of level, this makes cutting step the highest to the requirement of the precision of laser technology, the degree of depth of cutting,
The impacts of the damage from laser layer formed etc. all become the factor needing to consider, thus cause cut to realize
Backplate is high with the method technology difficulty being electrically insulated of contact area.
Based on this, the present invention provides the manufacture method of a kind of hetero-junctions MWT battery, and the method includes:
Thering is provided substrate, the front of described substrate is coated with front passivation layer, and the back side is coated with backside passivation layer,
And described substrate have at least one run through himself, front passivation layer and the via of backside passivation layer；
Use mask sheet to be blocked completely by the via of described substrate back, mix at the formation back side, the back side of substrate
Diamicton, forms backside conductive layer, at the described back of the body on the surface of doped layer away from substrate side, the described back side
Back electrode layer is formed on the surface of conductive layer away from substrate side, face；
Remove described mask sheet, in described via, fill conductive material, and form front in substrate face
Grid line, in the region shape that substrate back is not covered by back side doped layer, backside conductive layer and back electrode layer
Becoming contact area, described front gate line is electrical connected with described contact area by the conductive material in described via,
And described contact area is electrically insulated with described back side doped layer, backside conductive layer and back electrode layer.
The manufacture method of hetero-junctions MWT battery provided by the present invention, uses mask sheet by battery front side
Grid line contact area overleaf blocks completely, then make on substrate back side doped layer, backside conductive layer and
Back electrode layer, it is achieved that back side doped layer, backside conductive layer and back electrode layer selectively formed,
Visible, the manufacture method of hetero-junctions MWT battery provided by the present invention make during the most
Fundamentally stopped front gate line the contact area of cell backside and back side doped layer, backside conductive layer and
The short circuit problem of back electrode layer, it is not necessary to the extra step making them be electrically insulated increasing other, makes
Technique the most easily realizes.
Further, since the manufacture method of hetero-junctions MWT battery provided by the present invention increases without extra
Other step just can realize contact area and be electrically insulated with back side doped layer, backside conductive layer and back electrode layer,
The most just save equipment, material and the manpower etc. needed for the step of extra increase, thus relatively with existing
Technology is had to reduce production cost.
It is above the core concept of the present invention, for enabling the above-mentioned purpose of the present invention, feature and advantage more
Add and become apparent, below in conjunction with the accompanying drawings the detailed description of the invention of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but this
Bright other can also be used to be different from alternate manner described here implement, those skilled in the art are permissible
In the case of intension of the present invention, doing similar popularization, therefore the present invention not by following public specifically
The restriction of embodiment.
Secondly, the present invention combines schematic diagram and is described in detail, when describing the embodiment of the present invention in detail, for just
In explanation, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described signal
Figure simply example, it should not limit the scope of protection of the invention at this.Additionally, should wrap in actual fabrication
Three-dimensional space containing length, width and the degree of depth.
The present embodiment provides the manufacture method of a kind of hetero-junctions MWT battery, utilizes and is provided with mask sheet
Slide glass boat, makes mask sheet block front gate line contact area overleaf, then forms structure, it is achieved that
Structure selectively formed.Concrete, the method comprises the following steps:
Step S01: providing substrate, the front of described substrate is coated with front passivation layer, and the back side is coated with the back of the body
Face passivation layer, and described substrate have at least one run through himself, front passivation layer and backside passivation layer
Via；
As in figure 2 it is shown, the type of the substrate 201 selected the most according to actual needs, N-type can be selected
Monocrystal silicon, p type single crystal silicon, N-type polycrystalline silicon or p-type polysilicon, or other can be as solar-electricity
The material in pond, the present embodiment is preferably n type single crystal silicon sheet.
Secondly, via 214 is provided on the substrate 201 provided, makes via 214 run through this substrate 201,
Wherein make via 214 and can use laser boring technique.
It should be noted that the made size of via 214, shape and number can be according to actual need
Designing accordingly, this is not limited by the present embodiment.
Again, use chemical vapor deposition method at formation front, the front passivation layer 202 of substrate 201,
The back side of substrate 201 forms backside passivation layer 203.
It addition, front passivation layer 202 and backside passivation layer 203 can also use physical vapor in the present invention
Depositing technics is formed, and is not defined at this.
In the present embodiment, the non-crystalline silicon that front passivation layer 202 and backside passivation layer 203 are preferably intrinsic is thin
Film, this intrinsic amorphous silicon thin film contains substantial amounts of passivation base (such as hydrogen atom), in the process that thin film is formed
In, the passivation base contained inside it can enter the surface of substrate 201 and the internal passivation that plays, reparation
The defect of substrate 201, thus improve minority carrier life time, reduce Carrier recombination.
It should be noted that the backside passivation layer 203 in the present embodiment does not use the method shape of mask
Becoming, this is the non-crystalline silicon that material is intrinsic due to backside passivation layer 203, and resistivity is high, hardly
Can conduct electricity, although so the contact area formed in subsequent step and back side doped layer simultaneously and backside passivation layer
203 contacts, but, contact area can't be produced by backside passivation layer 203 with back side doped layer and be electrically connected with
Touch；Therefore, backside passivation layer 203 can not use the method for mask to be formed.
Step S02: use mask sheet to be blocked completely by the via of described substrate back, in the back side shape of substrate
Become back side doped layer, the surface of doped layer away from substrate side, the described back side formed backside conductive layer,
The surface of described backside conductive layer away from substrate side is formed back electrode layer；
Wherein, the mode that the present embodiment uses mask sheet to be blocked completely by the via of described substrate back is preferred
For being placed on the slide glass boat with mask sheet 211 by described substrate 201, make the mask sheet 211 on slide glass boat
Block the via at described substrate 201 back side completely.
To this end, the present embodiment additionally provides one is applied to hetero-junctions MWT battery provided by the present invention
The slide glass boat of manufacture method, after substrate 201 being placed on this slide glass boat, substrate 201 and slide glass boat
Position relationship as it is shown on figure 3, substrate 201 front (sensitive surface) upward, the back side (shady face) down,
Directly contacting with slide glass boat, via 214 is blocked completely by the mask sheet 211 on slide glass boat.
In the present embodiment, the slide glass boat used includes frame 213, is positioned at the region that described frame surrounds
At least one mask sheet 211 and the supporting construction 212 that is connected with mask sheet 211 and frame 213, its
In, the area at substrate 201 back side that described mask sheet 211 is covered is more than shared by described via 214
The area at substrate 201 back side, described mask sheet 211 is for blocking the via of described substrate back completely.
Concrete, frame 213 is used for supporting mask sheet 211 and supporting construction 212, makes the two that shape not occur
Change, displacement etc., it is simple to operation；Mask sheet 211 is for blocking via and the support lining at substrate 201 back side
The end 201, for making the structure formed in subsequent step preferably insulate with contact area, mask sheet 211
Area is preferably much larger than the area of back side via, as a example by mask sheet and via are circle, usual feelings
Under condition, a diameter of grade of mask sheet, a diameter of micron order of via；Supporting construction 212 is used for will
Mask sheet 211 and frame 213 connect, and support mask sheet 211.
As shown in Figure 6, by the top view of a kind of slide glass boat that the embodiment of the present invention is provided, mask sheet 211
Shape preferably consistent with the shape that via 214 is presented on substrate 201 back side, excellent in the present embodiment
Elect circle as；Further, the supporting construction 212 of slide glass boat includes a plurality of formation cancellated support line,
Described mask sheet 211 is positioned at the point of intersection of described support line, and the surrounding of supporting construction 212 is by frame 213
Surround；Wherein very thin owing to supporting line, and directly do not contact with battery, so battery will not be produced
Life is blocked, and affects the formation of film layer on battery.
It should be noted that slide glass boat employed in the present embodiment creative mask sheet is added at the bottom of boat,
When making shape film forming layer in subsequent step, the part that cell piece is blocked by mask sheet will not shape film forming layer, by
This realizes the selectively formed of film layer, and slide glass boat of the prior art is frame-shaped, can whole by battery
One side comes out, it is impossible to realize the selective growth of film layer, therefore, the slide glass that the present embodiment is provided
Boat can make the making step only needing the battery at subregion shape film forming layer simplify.
Additionally, the present embodiment only illustrates with the slide glass boat of said structure, but the present invention does not limit
The concrete structure of this slide glass boat, in other embodiments, the size of mask sheet 211, shape and with support
The position relationship of structure 212, supporting construction 212 structure etc. all can respective change according to actual needs.
As shown in Figure 4, when forming back side doped layer 204, backside conductive layer 207 and back electrode layer 208
Time, substrate 201 is that the back of the body is placed face down on above-mentioned slide glass boat, and the mask sheet 211 on slide glass boat is complete
Entirely block the via at substrate 201 back side, therefore, after removing mask sheet 211, the back side formed
Doped layer 204, backside conductive layer 207 and back electrode layer 208 are not present in mask sheet on substrate 201
The region blocked, say, that by the method using mask, it is achieved that back side doped layer 204, the back of the body
Face conductive layer 207 and back electrode layer 208 selectively formed.
It addition, in the present embodiment, forming back side doped layer 204 and formed between backside conductive layer 207,
Also include: at formation front, the front doped layer 205 of substrate 201；In front doped layer 205 away from substrate
Front side conductive layer 206 is formed on the surface of 201 sides.
The material of described back side doped layer 204 is preferably heavily doped non-crystalline silicon, and doping type and substrate
The doping type of 201 is identical；The material of described front doped layer 205 is preferably the non-crystalline silicon of doping, doping
Type is contrary with the doping type of substrate 201, and this front doped layer 205 is during being formed, with lining
Bear building-up closes and forms PN junction.
The material of described backside conductive layer 207 and front side conductive layer 206 is preferably ITO(indium tin oxide),
IZO(indium-zinc oxide), AZO(Al-Doped ZnO), BZO(boron zinc oxide), IMO(mixes
Molybdenum Indium sesquioxide .) or IWO(indium tungsten oxide) in any one or a few, and the material of the two can
With identical can also be different.Backside conductive layer 207 and front side conductive layer 206 have high permeability and height is led
Electrical advantage, has favorable influence to the photoelectric transformation efficiency of battery.
The material of described back electrode layer 208 is preferably the metal material of good conductivity.
Form described backside passivation layer 203, back side doped layer 204, backside conductive layer 207, backplate
Can adopt during layer 208, front passivation layer 202, front doped layer 205 and front side conductive layer 206
By chemical vapor deposition method or physical vapor deposition process.The present embodiment preferably uses chemical gaseous phase to form sediment
Long-pending technique.
It should be noted that the present embodiment is only with backside passivation layer, front passivation layer-back side doped layer-front
Illustrate as a example by the formation order of doped layer-front side conductive layer-backside conductive layer-back electrode layer, but
The present invention does not limit above-mentioned several order that is partially forming, in other embodiments, and can be according to actual
Situation needs, and selects different formation orders, such as: backside passivation layer, front passivation layer-back side doped layer-
Backside conductive layer-back electrode layer-front doped layer-front side conductive layer etc..
Step S03: remove described mask sheet, fills conductive material in described via, and in substrate face
Form front gate line, do not covered by back side doped layer, backside conductive layer and back electrode layer at substrate back
Formation contact area, region, described front gate line is by the conductive material in described via and described contact area
It is electrical connected, and described contact area is electrical with described back side doped layer, backside conductive layer and back electrode layer
Insulation.
As it is shown in figure 5, this step is the committed step that MWT technology introduces hetero-junction solar cell, remove
After mask sheet 211, in via 214, fill conductive material, form front gate line at battery front side simultaneously
209, cell backside formed contact area 210, and make the conductive material in front gate line 209, via and
Contact area 210 three is electrical connected, and adopts in this way, by front gate line 209 by substrate 201
Via 214 cause cell backside, and form contact area 210 at cell backside, make the front of battery no longer
Needing the main gate line that shielded area is big, and then reduce shading loss, improve short circuit current, final raising is different
The conversion efficiency of matter junction battery.
During actual power, the electric current in contact area 210 is the electric current that battery front side produces, and
Electric current in back side doped layer 204, backside conductive layer 207 and back electrode layer 208 is that cell backside produces
Electric current, therefore, in order to avoid the electric current at the positive back side is short-circuited, it is therefore desirable to make contact area 210
It is electrically insulated with back side doped layer 204, backside conductive layer 207 and back electrode layer 208.
It should be noted that in order to make contact area 210 realize smoothly and back side doped layer 204, back side conduction
Layer 207 and being electrically insulated of back electrode layer 208, preferably can make the lining that mask sheet 211 is blocked
The area at substrate 201 back side that the area at the back side, the end 201 is blocked more than contact area 210.
Integrating step S01～step S03 it can be found that, the method that the present embodiment is provided, make at battery
During be achieved that contact area 210 and back side doped layer 204, backside conductive layer 207 and back electrode layer
208 be electrically insulated, it is not necessary to the most additionally increase other step realizing insulation.
And in prior art, it is common that battery each several part be respectively formed complete after, then to back side doped layer,
Backside conductive layer and back electrode layer cut, and to realize they being electrically insulated with contact area, carry out
The laser technology that used of cutting, be not only difficult to reach nano level back side doped layer, backside conductive layer and
The required precision of back electrode layer, makes processing technology difficulty big, and cannot realize completely insulated,
And the damage from laser layer caused while cutting affects the performance of battery itself, meanwhile, laser is cut
Cut required equipment, manpower and material etc. and too increase the cost of making.
Therefore, the method that the present embodiment is provided can not only accomplish contact area 210 and back side doped layer 204,
Backside conductive layer 207 and back electrode layer 208 are completely insulated, it is achieved simple for process, and save
Production cost.
In this step, in via 214, fill conductive material, and at formation front, substrate 201 front grid
Line 209, forms contact area 210 on the region that substrate back is blocked by mask sheet 211 and preferably uses silk
Net typography.
Corresponding with said method embodiment, present invention also offers a kind of hetero-junctions MWT battery, adopt
Making in aforementioned manners, its structure is as it is shown in figure 5, include:
Substrate 201, covers the front passivation layer 202 in described substrate 201 front, covers described substrate 201
The backside passivation layer 203 at the back side, at least one runs through described substrate 201, front passivation layer 202 and the back side
The via of passivation layer 203；
It is located at the back side doped layer 204 at described substrate 201 back side, is located at described back side doped layer 204
Backside conductive layer 207 on the surface of away from substrate 201 side, is located at described backside conductive layer 207 and carries on the back
Back electrode layer 208 on the surface of substrate 201 side；
It is positioned at the conductive material of described via, is positioned at the front gate line 209 in substrate 201 front, is positioned at lining
The district that the back side, the end 201 is not covered by back side doped layer 204, backside conductive layer 207 and back electrode layer 208
Contact area, territory 210, described front gate line 209 is by the conductive material in described via and described contact area
210 are electrical connected, and described contact area 210 and described back side doped layer 204, backside conductive layer 207 and
Back electrode layer 208 is electrically insulated.
The hetero-junctions MWT battery that the present embodiment the is provided method by mask, it is achieved that adulterate in the back side
Layer 204, backside conductive layer 207 and the selective growth of back electrode layer 208, fundamentally make contact area
210 thoroughly insulate with back side doped layer 204, backside conductive layer 207 and back electrode layer 208；And it is existing
In technology, owing to using laser cutting technique cutting back side doped layer, backside conductive layer and back electrode layer,
It is difficult to reach the precision of higher cutting, so, it is impossible to realize insulating thoroughly, and then add battery
Being combined of positive back side carrier；Therefore, the more existing skill of hetero-junctions MWT battery that the present embodiment is provided
The Carrier recombination of art reduces, and photoelectric transformation efficiency raises.
The hetero-junctions MWT battery that the present embodiment is provided, also includes: cover in substrate 201 front
Front doped layer 205；The front covered on the surface of doped layer 205 away from substrate side, described front is led
Electric layer 206.
Hetero-junctions MWT battery that the embodiment of the present invention is provided and preparation method thereof, employing mask sheet will
Battery front side grid line contact area overleaf blocks completely, then makes back side doped layer, the back side on substrate
Conductive layer and back electrode layer, it is achieved that the selection of back side doped layer, backside conductive layer and back electrode layer
Property formed, it is seen then that the manufacture method of hetero-junctions MWT battery provided by the present invention make process
In the most fundamentally stopped front gate line at the contact area of cell backside and back side doped layer, the back side
Conductive layer and the short circuit problem of back electrode layer, it is not necessary to the extra step making them be electrically insulated increasing other
Suddenly, processing technology the most easily realizes.
Further, since hetero-junctions MWT battery provided by the present invention and preparation method thereof increases without extra
Adding other step, just can to realize contact area the most exhausted with back side doped layer, backside conductive layer and back electrode layer
Edge, the most just saves equipment, material and the manpower etc. needed for the step of extra increase, thus relatively
Production cost is reduced with prior art.
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Any
Those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize
Technical solution of the present invention is made many possible variations and modification by method and the technology contents of stating announcement, or
It is revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention,
According to the technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification,
All still fall within the range of technical solution of the present invention protection.
Claims (10)
1. the manufacture method of a hetero-junctions MWT battery, it is characterised in that including:
Thering is provided substrate, the front of described substrate is coated with front passivation layer, and the back side is coated with backside passivation layer, and institute
State substrate have at least one run through himself, front passivation layer and the via of backside passivation layer；
Mask sheet is used to be blocked completely by the via of described substrate back, at the formation back side, the back side doped layer of substrate,
The surface of doped layer away from substrate side, the described back side is formed backside conductive layer, deviates from described backside conductive layer
Back electrode layer is formed on the surface of substrate side；
Remove described mask sheet, in described via, fill conductive material, and form front gate line in substrate face,
In the formation contact area, region that substrate back is not covered by back side doped layer, backside conductive layer and back electrode layer, institute
State front gate line to be electrical connected with described contact area by the conductive material in described via, and described contact area and institute
State back side doped layer, backside conductive layer and back electrode layer to be electrically insulated；
The process that the via of described substrate back is blocked by described employing mask sheet completely is that described substrate is placed in load
On sheet boat, described slide glass boat include frame, at least one the mask sheet being positioned at the region that described frame surrounds and with
The supporting construction that described mask sheet is connected with frame, the via of described substrate back is blocked completely by described mask sheet.
Manufacture method the most according to claim 1, it is characterised in that the substrate back of the body that described mask sheet is blocked
The area of the substrate back that the area in face is blocked more than described contact area.
Manufacture method the most according to claim 1, it is characterised in that the described formation back side, the back side at substrate
Doped layer, and described formed between backside conductive layer on the surface of doped layer away from substrate side, the described back side, also
Including:
Formation front, front doped layer at substrate；
The surface of doped layer away from substrate side, described front is formed front side conductive layer.
Manufacture method the most according to claim 3, it is characterised in that described backside passivation layer, back side doping
Layer, backside conductive layer, back electrode layer, front passivation layer, front doped layer and the formation process of front side conductive layer
Identical or different, described formation process is chemical vapor deposition or physical vapor deposition.
Manufacture method the most according to claim 1, it is characterised in that described filling in described via is conducted electricity
Material, and form front gate line in substrate face, at substrate back not by back side doped layer, backside conductive layer and the back of the body
The process of the formation contact area, region that face electrode layer covers is, uses silk-screen printing technique to fill in described via and leads
Electric material, and substrate face print front gate line, substrate back not by back side doped layer, backside conductive layer and
The printing contact area, region that back electrode layer covers.
6. a slide glass boat, is applied to the manufacture method described in any one of Claims 1 to 5, it is characterised in that
Described slide glass boat include frame, at least one the mask sheet being positioned at the region that described frame surrounds and with described mask
The supporting construction that sheet is connected with frame；
The area of the substrate back that described mask sheet is covered is more than the area of the substrate back shared by described via, institute
State mask sheet for blocking the via of described substrate back completely.
Slide glass boat the most according to claim 6, it is characterised in that described mask sheet is circular.
Slide glass boat the most according to claim 7, it is characterised in that the supporting construction of described slide glass boat includes many
Bar shaped reticulates the support line of structure, and described mask sheet is positioned at the point of intersection of described support line.
9. a hetero-junctions MWT battery, it is characterised in that including:
Substrate, covers the front passivation layer of described substrate face, covers the backside passivation layer of described substrate back, extremely
Few one runs through described substrate, front passivation layer and the via of backside passivation layer；
It is located at the back side doped layer of described substrate back, is located at the table of doped layer away from substrate side, the described back side
Backside conductive layer on face, is located at the back electrode layer on the surface of described backside conductive layer away from substrate side；
It is positioned at the conductive material of described via, is positioned at the front gate line of substrate face, be positioned at substrate back and do not carried on the back
The contact area on region that face doped layer, backside conductive layer and back electrode layer cover, described front gate line passes through institute
The conductive material stated in via is electrical connected with described contact area, and described contact area and described back side doped layer, the back of the body
Face conductive layer and back electrode layer are electrically insulated；
Wherein, described back side doped layer, described backside conductive layer, described back electrode layer are by described at mask sheet
Formed when the via of substrate back blocks completely；
In described via, filling conductive material, described front gate line, contact area are shapes after removing described mask sheet
Become；
The process using mask sheet to be blocked completely by the via of described substrate back is that described substrate is placed in slide glass boat
On, described slide glass boat includes frame, at least one mask sheet being positioned at the region that described frame surrounds and with described
The supporting construction that mask sheet is connected with frame, the via of described substrate back is blocked completely by described mask sheet.
Hetero-junctions MWT battery the most according to claim 9, it is characterised in that also include:
Cover the front doped layer in substrate face；
Cover the front side conductive layer on the surface of doped layer away from substrate side, described front.
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| EP3496157A1 (en) * | 2017-12-05 | 2019-06-12 | Beijing Juntai Innovation Technology Co., Ltd | Solar cell sheet and preparation method thereof, solar cell string and photovoltaic module |
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| CN107946382A (en) * | 2017-11-16 | 2018-04-20 | 南京日托光伏科技股份有限公司 | Solar cell that MWT is combined with HIT and preparation method thereof |
| CN107863404A (en) * | 2017-12-05 | 2018-03-30 | 君泰创新（北京）科技有限公司 | Solar battery sheet and preparation method thereof, solar cell string and photovoltaic module |
| CN108054220A (en) * | 2017-12-12 | 2018-05-18 | 浙江晶盛机电股份有限公司 | A kind of silicon heterogenous solar cell and preparation method thereof |
| CN108305916B (en) * | 2018-03-05 | 2019-10-18 | 通威太阳能（成都）有限公司 | A kind of MWT battery manufacture craft based on plating masking diaphragm plate |
| CN109473492A (en) * | 2018-12-20 | 2019-03-15 | 江苏日托光伏科技股份有限公司 | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production |
| JP7271213B2 (en) * | 2019-02-12 | 2023-05-11 | 株式会社カネカ | MASK TRAY AND SOLAR BATTERY CELL MANUFACTURING METHOD |
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