CN104112683A - Solid ultrasonic bonding method based on homogeneous structures of copper micro cones - Google Patents
Solid ultrasonic bonding method based on homogeneous structures of copper micro cones Download PDFInfo
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- CN104112683A CN104112683A CN201410313881.2A CN201410313881A CN104112683A CN 104112683 A CN104112683 A CN 104112683A CN 201410313881 A CN201410313881 A CN 201410313881A CN 104112683 A CN104112683 A CN 104112683A
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- bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81345—Shape, e.g. interlocking features
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention discloses a solid ultrasonic bonding method based on homogeneous structures of copper micro cones. The method is characterized by comprising the following steps: two or more to-be-bonded elements with mutually matching electrical interconnect pads are selected, and every two to-be-bonded elements form a to-be-bonded pair; a copper micro cone is formed on the pad on one side of each to-be-bonded pair; a copper micro cone of a homogeneous shape is formed on the pad on the other side of each to-be-bonded pair; the element on one side of each two to-be-bonded pair is absorbed on the surface of a bonding device pressure head; and the pads on the two sides of each to-be-bonded pair are aligned to enable the copper micro cones on the two sides to be in contact in a matching manner, and bonding pressure and ultrasonic vibration are applied to one side of each to-be-bonded pair and the action is kept for a certain period of time to enable the copper micro cones on the two sides to be interconnected and bonded. The process is simple, neither heating nor flux is needed, heat damage to devices is avoided, and the product reliability is improved. The micro cone structure shortens the time for ultrasonic bonding, and improves the effectiveness of interconnection and the density of bonding.
Description
Technical field
The present invention relates to semiconductor die package field, specifically by the use of surperficial micropin cone metal level, realize the method for the ultrasonic interconnection bonding of interelement.
Background technology
Along with the development of electronic interconnection technology, packaging density and integrated improving constantly.The innovation of electrical interconnection technology is the key point of microelectric technique development.It is wetting that traditional melting bonding makes scolder melt at solder joint place by high temperature, bonding point solidified after cooling, connects thereby obtain preferably.But for the chip of some Highgrade integrations, the process of high temperature interconnection may affect the reliability of device, the energy consumption that simultaneous is larger.As more than traditional reflow soldering process need to be heated to scolder fusing point by temperature, high temperature environment can produce ill effect to chip itself, greatly reduces the reliability of product.
For to enhance device reliability with reduce considering of manufacturing cost these two factors, alap chip interconnects temperature becomes the focus of current interconnection technique research.A large amount of scholar are studying new type low temperature interconnection technique both at home and abroad, but these new technologies are conventionally with harsher process conditions, so its range of application is very limited.For example utilize the high surface energy of the materials such as nanoscale gold, silver, reduce recrystallization temperature, thereby in the auxiliary lower generation low-temperature sintering phenomenon of pressure, and then realize soldered.For the nano-Ag particles that is 100nm for diameter, bonding can carry out under 300 ° of following temperature of C, 25MPa pressure, obtains shear strength more than 10MPa.Again for example, some metals can interact at low temperatures and form compound between refractory metal, and as indium-Yin, indium-Xi etc. can be used for realizing low temperature interconnect.
Ultrasonic bonding is the energy that utilizes supersonic generator to produce, and produces vibration elastic by transducer is flexible rapidly under ultra-high frequency magnetic field induction, then passes to chopper through ultrasonic transformer, makes its vibrations, applies certain pressure simultaneously on chopper.Chopper is two metal covering close contacts of welding zone under two kinds of actings in conjunction of making a concerted effort, and reaches interatomic " bonding ", forms firmly welding.
By changing the surface topography of bonding idol, also can reach the effect that reduces bonding temperature.Micropin conic array material is because its needle point structure can destroy scolder oxide layer, be used in thermocompression bonding, after bonding, form Embedded interface, can obtain comparatively desirable bond strength at 160-200 ° of C, but this technology is because many bottlenecks are difficult to practical application.The cavity that for example interface exists makes bonding quality not good, therefore needs later stage butt welding contact continuous heating to improve boundary strength; The existence in cavity makes the time that bonding need to be longer, and this has had a strong impact on its practical ranges.
Summary of the invention
The present invention is directed to above-mentioned problems of the prior art, a kind of homostructural solid-state ultrasonic bonding method of copper micropin cone is proposed, the method can overcome some defects that technique exists in the past, avoid the high fire damage that device is caused of reflow soldering process temperature, avoided interfacial voids problem and the long problem of bonding time of micropin cone thermocompression bonding simultaneously.
For solving the problems of the technologies described above, the present invention is achieved through the following technical solutions:
The invention provides one based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, comprise that step is as follows:
1) selection has two or more bonding elements for the treatment of of the electrical interconnection pad of mutual coupling, forms between two one and treats that bonding is even;
2) on the electrical interconnection pad of a wherein side for the treatment of bonding idol, form copper micropin cone;
3) the copper micropin that forms identical pattern on the electrical interconnection pad of opposite side for the treatment of bonding idol is bored;
4) a side element for the treatment of bonding idol is adsorbed on to bonding apparatus pressure head surface;
5) will treat the electrical interconnection pad alignment of both sides of bonding idol, make the contact of described copper micropin cone coupling, apply bonding pressure and ultrasonic vibration and keep certain hour to a side for the treatment of bonding idol, make described copper micropin cone interconnection bonding.
Preferably, the formation of described copper micropin cone realizes by electrodeposition process, by controlling the parameters such as additive concentration, time, electrodeposition temperature, current density, control the pin cone height of described copper pin cone between 200 nanometer to 2000 nanometers, the cone bottom diameter of described copper micropin cone is between 100 nanometer to 1000 nanometers.
Preferably, the described copper micropin cone height of same pad is basically identical.
Preferably, form after described copper micropin cone, prepare antioxidation coating at described copper micropin poppet surface.
Preferably, described antioxidation coating is metal simple-substance or the alloy such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature, and thickness, for number nanometers are to tens nanometer, does not change the appearance structure of copper micropin cone.
Preferably, described pressure head is hollow structure, described in adsorbing, treats bonding element by negative pressure of vacuum mode, and bonding process finishes rear pressure head and resets and depart from element.
Preferably, described ultrasonic vibration is produced by supersonic generator, and supersonic frequency is generally 10-150kHz, by mechanical device conduct to described pressure head and described in treat bonding element.
Preferably, it is hundreds of to thousands of microseconds that bonding process keeps under pressure and ultrasonic vibration, and the retention time is determined by the optimized results of metal species, bonding pressure, ultrasonic power and frequency requirement.
Generally, bonding process at room temperature carries out, and operating temperature is 15 degrees Celsius to 40 degrees Celsius; Bonding pressure is 0.1-30MPa, and bonding time is 0.04-5s.Operating temperature is low, and bonding time is short, is easier to operation, can extensive use.
Compared to prior art, the present invention has the following advantages:
In the present invention, copper micropin cone has good mechanical snap effect with copper micropin cone, the counterdiffusion strengthening mechanism that its good surface activity causes simultaneously can strengthen bonding effect, prevent significantly the generation in bonding process cavity, and then effectively reduce bonding temperature, improve bonding quality.
Brief description of the drawings
Below in conjunction with accompanying drawing, embodiments of the present invention are described further:
Fig. 1 is that copper micropin cone of the present invention is bored the profile before bonding with copper micropin.
Embodiment
Below embodiments of the invention are elaborated, the present embodiment is implemented under taking technical solution of the present invention as prerequisite, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Refer to Fig. 1, the invention provides one based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, comprise the following steps:
1) selection has two or more bonding elements for the treatment of of the electrical interconnection pad of mutual coupling, forms between two one and treats that bonding is even;
2) on the electrical interconnection pad of a wherein side for the treatment of bonding idol, form copper micropin cone 120;
3) the copper micropin that forms identical pattern on the electrical interconnection pad of opposite side for the treatment of bonding idol bores 130;
4) a side element for the treatment of bonding idol is adsorbed on to bonding apparatus pressure head 110 surfaces;
5) the electrical interconnection pad alignment of both sides of bonding idol will be treated, described copper micropin cone 120 is contacted with described copper micropin cone 130 couplings, apply bonding pressure and ultrasonic vibration and keep certain hour to a side for the treatment of bonding idol, making described copper micropin cone 120 and described copper micropin cone 130 interconnection bondings.
embodiment 1
(1) copper micropin cone preparation: prepare copper micropin cone on the bare chip with I/O pad, first process clean surface by electrochemical degreasing, immerse subsequently in 20wt.% sulfuric acid and activate to improve surface activity.Make Means of Electrodeposition prepare copper pin cone, bath composition used is: the CuSO of 100g/L
45H
2the H of O, 40g/L
3bO
4, the additive of 0.2g/L, the complexing agent of 40 g/L, wherein the effect of additive is to make copper micropin cone vertical-growth.Electrodeposition condition is 20 ° of C, pH=3, and current density is 1.2A/dm
2, sedimentation time is 3min.The about 800nm of copper micropin cone height of preparation, cone diameter is about 300nm～400nm.
(2) 2 chips that contain copper micropin cone are placed to aligning face-to-face, wherein a side chip is put near pressure head, pressure head is adsorbed on surface by vacuum power by chip, and adjusting key resultant pressure parameter regulates ultrasonic power and frequency, regulate time controller, open after switch, pressure head is with ultrasonic power 20W, equivalent static pressure 15MPa, bonding time 0.5s, completes bonding.After bonding, the vacuum of shutoff head 110, takes off chip.
embodiment 2
Prepare copper micropin cone 120 and surface anti-oxidation layer Ag layer on for the surface-pasted welding disking area metal derby of ball grid array (BGA) type at printed substrate (PCB), the pin cone height approximately 1 μ m of copper micropin cone 120, the about 10nm of Ag layer thickness.In kind prepare copper micropin cone 130 and surface anti-oxidation layer Ag layer on for the surface-pasted welding disking area metal derby of ball grid array (BGA) type at printed substrate (PCB).2 identical bonding chips for the treatment of are placed to aligning face-to-face, one of them treats that bonding chip is put near pressure head 110, pressure head 110 is adsorbed on surface by vacuum power by chip, and adjusting key resultant pressure parameter regulates ultrasonic power and frequency, regulate time controller, open after switch, pressure head 110 is with ultrasonic power 20W, equivalent static pressure 10MPa, bonding time 1.2s, completes bonding.After bonding, the vacuum of shutoff head 110, takes off chip.
embodiment 3
Welding disking area at upside-down mounting substrate is prepared copper micropin cone 120 and antioxidation coating Ag layer by chemical deposition or electrodeposition process, integral thickness is about 5 μ m, the pin cone height of copper micropin cone 120 is about 1 μ m, and Au layer thickness is 10nm, and the Au of this thickness can not exert an influence to pin wimble structure.The welding disking area of another upside-down mounting substrate is prepared copper micropin cone 130 and antioxidation coating Au layer by chemical deposition or electrochemical deposition,, integral thickness is about 5 μ m, and the pin cone height of copper micropin cone 130 is about 1 μ m, and Au layer thickness is 10nm.Two upside-down mounting substrate face opposites are aimed at, the substrate that removes surface oxide layer with pickling is put near pressure head 110, pressure head 110 is adsorbed on surface by vacuum power by substrate, and adjusting key resultant pressure parameter regulates ultrasonic power and frequency, regulate time controller, open after switch, pressure head 110 is with ultrasonic power 20W, equivalent static pressure 10MPa, bonding time 1.2s, completes bonding.After bonding, the vacuum of shutoff head 110, takes off substrate.
Further, the formation of copper micropin cone 120 and copper micropin cone 130 can realize by electrodeposition process, by controlling the parameters such as additive concentration, time, electrodeposition temperature, current density, control the pin cone height of copper pin cone 120 and copper micropin cone 130 between 200 nanometer to 2000 nanometers, the cone bottom diameter of copper micropin cone 120 and copper micropin cone 130 is between 100 nanometer to 1000 nanometers; The pin cone height of the copper micropin cone of same pad is basically identical; Form after copper micropin cone 120 and copper micropin cone 130, bore 130 surfaces at copper micropin cone 120 and copper micropin and prepare antioxidation coating; Antioxidation coating is metal simple-substance or the alloy such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature, and thickness, for number nanometers are to tens nanometer, does not change the appearance structure of copper micropin cone.
Further, pressure head 110 is hollow structure, is adsorbed and is treated that bonding element, bonding process finish rear pressure head 110 and reset and depart from element by negative pressure of vacuum mode.
Further, ultrasonic vibration is produced by supersonic generator, and supersonic frequency is generally 10-150kHz, is conducted to pressure head 110 and is treated bonding element by mechanical device; It is hundreds of to thousands of microseconds that bonding process keeps under pressure and ultrasonic vibration, and the retention time is determined by the optimized results of metal species, bonding pressure, ultrasonic power and frequency requirement.
Generally, bonding process at room temperature carries out, and operating temperature is 15 degrees Celsius to 40 degrees Celsius, and the local temperature producing due to ultrasonic vibration friction raises does not affect the effect of this method; Bonding pressure generally, between 0.1-30MPa, is determined according to bonding ultrasonic power; Bonding time is generally between 0.04-5s, according to bonding pressure and bonding ultrasonic power and determine.Operating temperature is low, and bonding time is short, is easier to operation, can extensive use.
Disclosed herein is only the preferred embodiments of the present invention, and these embodiment are chosen and specifically described to this specification, is in order to explain better principle of the present invention and practical application, is not limitation of the invention.The modifications and variations that any those skilled in the art do within the scope of specification, all should drop in the scope that the present invention protects.
Claims (10)
1. based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, comprise that step is as follows:
1) selection has two or more bonding elements for the treatment of of the electrical interconnection pad of mutual coupling, forms between two one and treats that bonding is even;
2) on the electrical interconnection pad of a wherein side for the treatment of bonding idol, form copper micropin cone;
3) the copper micropin that forms identical pattern on the electrical interconnection pad of opposite side for the treatment of bonding idol is bored;
4) a side element for the treatment of bonding idol is adsorbed on to bonding apparatus pressure head surface;
5) will treat the electrical interconnection pad alignment of both sides of bonding idol, make the described copper micropin cone coupling contact of both sides, apply bonding pressure and ultrasonic vibration and keep certain hour to a side for the treatment of bonding idol, make the described copper micropin cone interconnection bonding of both sides.
2. according to claim 1 based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, the formation of described copper micropin cone realizes by electrodeposition process, by controlling the parameters such as additive concentration, time, electrodeposition temperature, current density, control the pin cone height of described copper pin cone between 200 nanometer to 2000 nanometers, the cone bottom diameter of described copper micropin cone is between 100 nanometer to 1000 nanometers.
3. according to claim 2ly it is characterized in that based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, the described copper micropin cone height of same pad is basically identical.
4. according to claim 3ly it is characterized in that based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, form after described copper micropin cone, prepare antioxidation coating at described copper micropin poppet surface.
5. according to claim 4 based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, described antioxidation coating is metal simple-substance or the alloy such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature, thickness, for number nanometer is to tens nanometer, does not change the appearance structure of copper micropin cone.
6. according to claim 5ly it is characterized in that based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, described pressure head is hollow structure, described in adsorbing, treats bonding element by negative pressure of vacuum mode, and bonding process finishes rear pressure head and resets and depart from element.
7. according to claim 6ly it is characterized in that based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, described ultrasonic vibration is produced by supersonic generator, by mechanical device conduct to described pressure head and described in treat bonding element.
8. according to claim 7 based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, it is hundreds of to thousands of microseconds that bonding process keeps under pressure and ultrasonic vibration, and the retention time is determined by the optimized results of metal species, bonding pressure, ultrasonic power and frequency requirement.
According to described in claim 1 to 8 any one based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, bonding process at room temperature carries out, operating temperature is 15 degrees Celsius to 40 degrees Celsius.
According to described in claim 1 to 8 any one based on the homostructural solid-state ultrasonic bonding method of copper micropin cone, it is characterized in that, bonding pressure is 0.1-30MPa, bonding time is 0.04-5s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410313881.2A CN104112683A (en) | 2014-07-03 | 2014-07-03 | Solid ultrasonic bonding method based on homogeneous structures of copper micro cones |
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| CN201410313881.2A CN104112683A (en) | 2014-07-03 | 2014-07-03 | Solid ultrasonic bonding method based on homogeneous structures of copper micro cones |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346401A (en) * | 2018-10-18 | 2019-02-15 | 苏州美图半导体技术有限公司 | Improve Jin-gold thermocompression bonding intensity method in silicon face nanoforest |
| CN110085515A (en) * | 2019-04-30 | 2019-08-02 | 德淮半导体有限公司 | Chip connection method |
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| US20070264752A1 (en) * | 2006-05-11 | 2007-11-15 | Fujitsu Limited | Method of manufacturing a semiconductor device |
| TW201007862A (en) * | 2008-05-29 | 2010-02-16 | Fraunhofer Ges Forschung | Material connection method for metal contact structure |
| CN102610537A (en) * | 2012-03-28 | 2012-07-25 | 上海交通大学 | Method for low-temperature solid bonding of semiconductor device |
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2014
- 2014-07-03 CN CN201410313881.2A patent/CN104112683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070264752A1 (en) * | 2006-05-11 | 2007-11-15 | Fujitsu Limited | Method of manufacturing a semiconductor device |
| TW201007862A (en) * | 2008-05-29 | 2010-02-16 | Fraunhofer Ges Forschung | Material connection method for metal contact structure |
| CN102610537A (en) * | 2012-03-28 | 2012-07-25 | 上海交通大学 | Method for low-temperature solid bonding of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346401A (en) * | 2018-10-18 | 2019-02-15 | 苏州美图半导体技术有限公司 | Improve Jin-gold thermocompression bonding intensity method in silicon face nanoforest |
| CN109346401B (en) * | 2018-10-18 | 2021-03-26 | 苏州美图半导体技术有限公司 | Method for improving gold-gold hot-pressing bonding strength in silicon surface nano forest |
| CN110085515A (en) * | 2019-04-30 | 2019-08-02 | 德淮半导体有限公司 | Chip connection method |
| CN110085515B (en) * | 2019-04-30 | 2021-04-13 | 德淮半导体有限公司 | Wafer bonding method |
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Application publication date: 20141022 |