CN104111549A - 液晶面板及其制备方法 - Google Patents
液晶面板及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种液晶面板,包括多个液晶盒、测试薄膜晶体管(TFT)单元、栅极测试垫、源极测试垫、以及栅极测试垫,其中,所述测试TFT单元包括:设置有源极、漏极、栅极的TFT;围绕TFT的框胶;一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线;一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线;一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线。本发明还提供一种液晶面板的制备方法。本发明可以通过测试TFT单元的设计实现对液晶盒在成盒后的电性测量。
Description
技术领域
本发明涉及液晶技术领域,尤其涉及一种液晶面板及其制备方法。
背景技术
位于显示面板上的薄膜晶体管(TFT)位于陈列基板上,在显示面板工作时起电路开关作用,它们按照顺序把图像信号传输至对应的像素。因此,一般来说,液晶显示面板的显示质量与寿命,很大部分可以通过对其TFT电性的测量来进行评估。
然而,当前TFT的电性特征,只能在液晶显示面板的阵列基板完成制作后测量,而TFT实际是阵列基板与彩膜基板对组形成的液晶盒内进行工作。仅在阵列基板测量的TFT电性不能完全代表TFT在液晶盒内工作的电性。
因此,如何设计一种易于测试其液晶盒内电性的液晶面板及其制备方法,成为液晶显示设备的一大研发方向。
发明内容
本发明的目的在于提供一种液晶面板及其制备方法,旨在可以实现测量液晶盒内测量TFT电性,更接近其真实的状况。
为解决上述技术问题,本发明实施例提供以下技术方案:
一种液晶面板,由阵列基板与彩膜基板进行成盒形成,所述阵列基板上包括多个液晶盒、测试TFT单元、以及源极测试垫、漏极测试垫、栅极测试垫,其中,所述测试TFT单元包括:
设置有源极、漏极、栅极的TFT;
围绕TFT的框胶;
一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线;
一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线;
一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线。
优选地,所述测试TFT单元设置于所述液晶面板的靠近所述源极测试垫、漏极测试垫、栅极测试垫的一侧。
优选地,所述测试TFT单元还包括设置在所述阵列基板与所述彩膜基板之间液晶分子,用于模拟液晶盒内的环境。
优选地,所述测试TFT单元与所述液晶盒一同生长形成。
优选地,所述源极测试垫、漏极测试垫、栅极测试垫皆为金属薄片。
为解决上述技术问题,本发明实施例提供以下技术方案:
一种液晶面板的制备方法,包括如下步骤:
制备阵列基板,所述阵列基板上包括:设置有源极、漏极、栅极的TFT、以及至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口;其中,至少一个TFT用于形成测试TFT单元,所述测试TFT单元包括:一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线;一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线;一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线;
制备彩膜基板;
将所述阵列基板与所述彩膜基板对位,并通过框胶进行贴合,以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间,所述容纳空间的所述胶框上设置有一液晶注入孔;
通过所述液晶注入孔向所述容纳空间内注入液晶,并将所述液晶注入孔密封,以形成多个液晶盒及至少一个所述测试TFT单元;
对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割,以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫;以及
在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附,以形成液晶面板。
优选地,形成所述测试TFT单元的TFT,位于所述液晶面板的靠近所述测试接口的一侧。
优选地,所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
优选地,所述源极测试垫、所述漏极测试垫、所述栅极测试垫的制备步骤分别为:将所述源极引线、所述漏极引线、以及所述栅极引线的一端各连接一金属薄片。
优选地,将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫连接于测试设备,并根据测试结果对所述液晶面板的质量进行评估。
相对于现有技术,本发明的液晶面板及其制备方法,通过对测试TFT单元的设计,实现对TFT在液晶盒中的电性的测量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。
图1是本发明中实施例一中液晶面板的阵列基板示意图。
图2是本发明中实施例一中液晶面板的测试TFT单元的截面示意图。
图3是本发明中实施例二中液晶面板的制备方法示意图。
具体实施方式
请参照附图中的图式,其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例,其不应被视为限制本发明未在此详述的其它具体实施例。
实施例一
请参阅图1,为本发明实施例提供的液晶面板的示意图。所述的液晶面板包括多个液晶盒10、以及至少一个测试薄膜晶体管(TFT)单元20、以及至少一组由源极测试垫31、漏极测试垫32、栅极测试垫33构成的测试接口。
其中,所述源极测试垫31、漏极测试垫32、栅极测试垫33皆为金属薄片,所构成的测试接口用于连接测试装置(未标示)。
液晶盒10,由阵列基板、彩膜基板、及框胶将TFT密封并注入液晶而形成。
请同时参阅图1与图2,测试TFT单元20,包括:设置源极26、漏极27、栅极25的TFT;围绕TFT的框胶24;一端连接所述TFT的栅极25、另一端穿过所述框胶24连接所述栅极测试垫33的栅极测试引线23;一端连接所述TFT的源极26、另一端穿过所述框胶24连接所述源极测试垫31的源极测试引线21;一端连接所述TFT的漏极27、另一端穿过所述框胶24连接所述漏极测试垫32的漏极测试引线22。
可以理解的是,上述测试TFT单元20,相当于在在形成阵列基板1时,将部分的TFT的漏极、源极和栅极中分别引出三条测试引线(21、22、23),分别连接于漏极32与漏极测试垫27、源极31与源极测试垫26、栅极33与栅极测试垫25。
所述选择部分的TFT,可以是在阵列基板的外侧选择一排或每隔预设阈值进行TFT的选择。如在靠近上述测试垫(31、32、33)的一侧,每隔5个选择1个作为测试TFT单元20的TFT。
如图2所示的图1中A-A’向截面的示意图。其中,TFT生成于所述阵列基板1上。其中栅极25的金属上依次覆盖有栅极绝缘层251(一般采用氮化硅层)、非晶硅半导体层252(a-Si:H)和掺杂型硅半导体253(n+a-Si:H),源极26金属和漏极27金属设置在掺杂型非晶硅半导体253上。源极26与漏极27通常采用SD金属,且其上涂布绝缘保护层261与271(PV SiNx)。
将所述阵列基板1与所述彩膜基板2之间保留预设的间隙,并通过框胶24进行密封固定并保留液晶流入口;通过所述液晶流入口注入液晶28,并通过所述框胶完成密封;可以理解的是,框胶24围绕在TFT***,而液晶分子28充溢在TFT的周围,用于模拟液晶盒内的环境。
所述测试TFT单元20中的TFT与所述液晶盒10中的TFT一同生长形成。因此,对测试TFT单元20中进行电性测量,即可得到其他液晶盒10的电性测量值。
可以理解的是:在进行本实施例中的液晶面板的设计时,通常将所述测试TFT单元20设置于所述液晶面板靠近三极测试垫(31、32、33)的一侧便于测量。而且为了减小尺寸,也可以在完成测量后,将上述测量TFT单元20切割掉。当然,保留亦可。
实施例二
如图3所示,为一种易测量的液晶面板的生成过程。用于生成实施例1中的液晶面板。
在步骤S301中,形成阵列基板。其中,阵列基板上包括:包括多个薄膜晶体管(TFT)、以及源极测试垫、漏极测试垫、栅极测试垫。
其中,至少一个TFT用于形成测试TFT单元,即,额外需要在TFT的栅极、漏极、及源极上连出三根测试引线。分别是:一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线;一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线;一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线。
在步骤302中,形成彩膜基板。由于此步骤与传统工艺相同,此处不再赘述。在步骤303中,将所述阵列基板与所述彩膜基板对位,并通过框胶进行贴合,以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间。
可以理解的是:在将所述阵列基板与所述彩膜基板进行对位时,应预留一定的空隙以便形成容纳空间。此外,所述容纳空间的所述胶框上设置有一液晶注入孔。
在步骤S304中,向所述容纳空间内注入液晶,以形成多个液晶盒及至少一个所述测试TFT单元。
可以理解的是:向容纳空间注入液晶的方式,既可以是通过密封时预留的液晶注入口,也可以是将所述的容纳空间切断后再注入。此外,完成液晶的注入后,应将注入口进行密封。
在步骤S305中,对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割,以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫以便进行TFT测试。
可以理解的是:测试时,将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫分别连接于测试设备,并根据所述测试设备所产生的测试结果对所述液晶面板的质量进行评估。
在步骤S306中,在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附,以形成液晶面板。
传统的TFT电性测量,一般是在阵列基板形成之后(即实施例2中步骤S301中)进行的,但实际上在完成液晶盒盒工艺后,其电性或称沟道性能会受到影响,因此在这一步骤中进行测量不够准确。
而本发明通过将部分的液晶盒在阵列基板制成时,增加了三极的测试引线,可以在完成液晶盒时,完全模拟液晶盒内的场景进行测量,保证了数据的准确性。
此外,液晶面板及其制备方法,还具有工艺简单、不会增加成本等优点。为了节约面积,在完成测试后,还可以切除测试TFT单元。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通测试人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种液晶面板,其特征在于,包括多个液晶盒、至少一个测试TFT单元、源极测试垫、漏极测试垫、以及栅极测试垫,其中,所述测试TFT单元包括:
设置源极、漏极、栅极的TFT;
围绕TFT的框胶;
一端连接所述TFT的栅极、另一端穿过所述框胶连接所述栅极测试垫的栅极测试引线;
一端连接所述TFT的源极、另一端穿过所述框胶连接所述源极测试垫的源极测试引线;以及
一端连接所述TFT的漏极、另一端穿过所述框胶连接所述漏极测试垫的漏极测试引线。
2.根据权利要求1所述的液晶面板,其特征在于,所述测试TFT单元设置于所述液晶面板的靠近所述源极测试垫、漏极测试垫、栅极测试垫的一侧。
3.根据权利要求1所述的液晶面板,其特征在于,所述测试TFT单元还包括设置在所述阵列基板与所述彩膜基板之间液晶分子,用于模拟液晶盒内的环境。
4.根据权利要求3所述的液晶面板,其特征在于,所述测试TFT单元与所述液晶盒一同生长形成。
5.根据权利要求1所述的液晶面板,其特征在于,所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
6.一种液晶面板的制备方法,其特征在于,包括如下步骤:
制备阵列基板,所述阵列基板上包括:设置源极、漏极、栅极的TFT、以及至少一组由源极测试垫、漏极测试垫、栅极测试垫构成的测试接口;其中,至少一个TFT用于形成测试TFT单元,所述测试TFT单元包括:一端连接所述TFT的栅极、另一端连接所述栅极测试垫的栅极测试引线;一端连接所述TFT的源极、另一端连接所述源极测试垫的源极测试引线;一端连接所述TFT的漏极、另一端连接所述漏极测试垫的漏极测试引线;
制备彩膜基板;
将所述阵列基板与所述彩膜基板对位,并通过框胶进行贴合,以形成由所述阵列基板、所述彩膜基板与所述框胶构成的容纳空间,所述容纳空间的所述胶框上设置有一液晶注入孔;
通过所述液晶注入孔向所述容纳空间内注入液晶,并将所述液晶注入孔密封,以形成多个液晶盒及至少一个所述测试TFT单元;
对所述测试TFT单元的外侧边缘的所述彩膜基板进行切割,以露出所述源极测试垫、所述漏极测试垫、所述栅极测试垫;以及
在所述阵列基板和所述彩膜基板的表面进行偏光片的贴附,以形成液晶面板。
7.根据权利要求6所述的液晶面板的制备方法,其特征在于,形成所述测试TFT单元的TFT,位于所述液晶面板的靠近所述测试接口的一侧。
8.根据权利要求6所述的液晶面板的制备方法,其特征在于,所述源极测试垫、所述漏极测试垫、所述栅极测试垫皆为金属薄片。
9.根据权利要求6所述液晶面板的制备方法,其特征在于,所述源极测试垫、所述漏极测试垫、所述栅极测试垫的制备步骤分别为:将所述源极引线、所述漏极引线、以及所述栅极引线的一端各连接一金属薄片。
10.根据权利要求6所述液晶面板的制备方法,其特征在于,将所述源极测试垫、所述漏极测试垫以及所述栅极测试垫连接于测试设备,并根据所述测试设备所产生的测试结果对所述液晶面板的质量进行评估。
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