CN104111539B - A kind of array hot spot generator and production method - Google Patents
A kind of array hot spot generator and production method Download PDFInfo
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- CN104111539B CN104111539B CN201410360641.8A CN201410360641A CN104111539B CN 104111539 B CN104111539 B CN 104111539B CN 201410360641 A CN201410360641 A CN 201410360641A CN 104111539 B CN104111539 B CN 104111539B
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Abstract
The present invention relates to a kind of array hot spot generator, this array hot spot generator by incident coherent plane light after diffraction optical element diffraction, two-dimensional quadrature array hot spot is produced in specific diffraction distance, it is characterized in that described diffraction optical element is the pure phase-plate of second order, be made up of the primitive close-packed arrays of same size, each primitive is the PHASE DISTRIBUTION of binary, and each primitive is add a rectangle light hole in a square light hole, relative displacement is had between the center of rectangle light hole and the center of square light hole, described specific diffraction distance and lambda1-wavelength, element width is relevant with ratio of compression.This array hot spot generator, structure is simple, and be easy to processing and copy, cost is lower, is applicable to multiple different light sources, can be widely used in the fields such as optical oomputing, optical communication and digital-optical hybrid processing.
Description
Technical field
The present invention relates to a kind of array hot spot generator and production method.
Background technology
Array hot spot generator can be divided into input beam one dimension or the two-dimensional array hot spot of rule, and then realizes the functions such as optical power fluctuation, hyperchannel interconnection and micrographics transmission.The generation of array hot spot has fully demonstrated high speed and the concurrency of optical processing, and have a wide range of applications in fields such as optical oomputing, optical communication and digital-optical hybrid processing value.Such as be used as the uniform array hot spot generator of each optical gate in two-dimentional light logic array, improve the energy collector array etc. of infrared focal plane array seeker performance.
At present, there is the multiple optical element that can be used for producing array hot spot, such as utilize microlens array or diffraction grating etc.Microlens array can make the different piece of incident beam directly focus on, but uneven from the intensity distributions of the array hot spot of a microlens array generation.Utilize Galileo or Newtonian telescopic system that microlens array can be made to produce the array hot spot of even intensity distribution, but its additional optical element add cost.Utilize common diffraction grating light beam can be divided into the secondary hot spot of multiple order of diffraction, but common diffraction grating can not produce the array hot spot of even intensity distribution.The diffraction grating of particular design, as Darman raster, can produce the array hot spot of even intensity distribution.But Darman raster is the diffraction optical element of the special construction drawn based on optimized algorithm, number based on its array hot spot produced is subject to certain restrictions, and the diffraction efficiency of Darman raster reduces along with the increase of array number of spots, therefore utilizes Darman raster can not produce the array hot spot of high-diffraction efficiency, high compression ratio and big figure.
Utilize Fractional Talbot affection to make optical array hot spot generator, i.e. Taibo array hot spot generator, the array hot spot of even intensity distribution, high-diffraction efficiency and any ratio of compression can be produced.And can occur that at each mark talbot distance place different splitting ratios is amplified, namely obtain more array number of spots [Opt.Lett.15,288 (1990) with less raster unit number; US Patent No. 5124843].But Taibo array hot spot generator is all based on a multistage phase-plate, obtain the array hot spot of high-diffraction efficiency, high compression ratio, big figure, and required phase place exponent number will be higher.But current processing technology is difficult to the phase-plate making this high-order, and machining process is complicated, and the phase-plate produced is expensive, is difficult to copy, be difficult to be applied in practice.
Summary of the invention
Technical matters to be solved by this invention is the problem and shortage in order to overcome existing for prior art, provides a kind of array hot spot production method that simultaneously can realize even intensity distribution, high compression ratio, big figure array hot spot.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of array hot spot production method, specifically comprises the following steps:
Step 1: choose multiple binary primitive, arranges the sizes values Δ of each binary primitive, and hot spot compression ratio β and array hot spot, at one-dimensional square number value M upwards, by above-mentioned setting value, calculate the size value of diffraction optical element;
Step 2: the phase value obtaining all binary primitive positions according to the preset value calculation arranged in step 1
Step 3: the phase value obtained according to step 2
the center of rectangle light hole in all binary primitives and the relative displacement δ at binary primitive center is calculated with all binary primitive sizes values Δs
mn;
Step 4: by M × M binary primitive opsition dependent parameter (m, n) close-packed arrays, produces the binary phase distribution plan of binary primitive;
Step 5: according to binary phase distribution plan, is prepared into diffraction optical element by M × M binary primitive;
Step 6: according to the wavelength X determination diffraction distance of the sizes values Δ of each binary primitive, hot spot compression ratio β and incident light, then incident light produces the orthogonal array hot spot of two-dimentional M × M even intensity distribution after diffraction optical element in this diffraction distance.
The invention has the beneficial effects as follows: diffraction optical element of the present invention is the binary devices of pure phase position, be easy to processing and copy, processing cost is low; The generation of two-dimensional quadrature array hot spot of even intensity distribution, high compression ratio, big figure can be realized simultaneously; The present invention can produce the orthogonal array hot spot, particularly high compression ratio of any ratio of compression, the array hot spot of high-diffraction efficiency; The present invention only need by controlling primitive size, and the size of diffraction optical element and ratio of compression, can produce the orthogonal array hot spot of any period; Structure of the present invention is simple, can be widely used in the fields such as optical oomputing, optical communication and digital-optical hybrid processing.
On the basis of technique scheme, the present invention can also do following improvement.
Further, in described step 3 by phase value
bring following formula (1) into primitive sizes values Δ and carry out calculating the center of rectangle light hole in all primitives and the relative displacement δ at primitive center
mn;
formula (1)
Wherein, m: be the primitive location parameter in the horizontal direction represented in array hot spot generator, round numbers;
N: the location parameter being the primitive in the vertical direction represented in array hot spot generator, round numbers;
Δ: be represent the foursquare length of side;
δ
mn: represent that location parameter is the relative displacement between the center of rectangle light hole in the primitive of (m, n) and the center of square light hole;
represent that location parameter is the phase value of the primitive present position of (m, n).
Further, carry out according to the formula (2) of the following stated the phase value calculating all primitive positions in described step 2
formula (2)
Wherein, hot spot compression ratio β: statement ratio of compression, value is positive integer;
L: the value of the span of regulation β;
Above-mentioned phase value
span be [-π, π].
Further, the method processing diffraction optical element adopting photoelectron preparation technology photoetching and wet etching to combine in described step 5; Or the method processing diffraction optical element adopting photoelectron preparation technology's photoetching and dry etching to combine.
Technical matters to be solved by this invention is the problem and shortage in order to overcome existing for prior art, a kind of array hot spot generator that simultaneously can realize even intensity distribution, high compression ratio, big figure array hot spot is provided, and this array hot spot generator, structure is simple, be easy to processing and copy, cost is lower.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of array hot spot generator, comprise set gradually along same axis light source emitter, expand and corrugated reshaper, diffraction optical element and hot spot display surface;
Described light source emitter is used for sending coherent light;
Describedly to expand and the coherent light of incidence expands as coherent plane light by corrugated reshaper; To expand and Gauss beam reshaping little for light beam spot diameter expands as the larger plane light wave of a branch of hot spot by corrugated reshaper;
Described diffraction optical element is by M × M binary primitive opsition dependent parameter (m, n) close-packed arrays, produces the binary phase distribution plan of binary primitive; And according to binary phase distribution plan, by the diffraction optical element that M × M binary primitive is prepared into; Wherein, each binary primitive is the PHASE DISTRIBUTION of binary.
The invention has the beneficial effects as follows: diffraction optical element of the present invention is the binary devices of pure phase position, be easy to processing and copy, processing cost is low; The generation of two-dimensional quadrature array hot spot of even intensity distribution, high compression ratio, big figure can be realized simultaneously; The present invention can produce the orthogonal array hot spot, particularly high compression ratio of any ratio of compression, the array hot spot of high-diffraction efficiency; The present invention only need by controlling primitive size, and the size of diffraction optical element and ratio of compression, can produce the orthogonal array hot spot of any period; Structure of the present invention is simple, can be widely used in the fields such as optical oomputing, optical communication and digital-optical hybrid processing.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described each binary primitive is superpose a rectangle light hole in a square light hole, and the center of rectangle light hole is not overlapping with the center of square light hole.
Further, the phase place of described square light hole is 0, and the phase place of rectangle light hole is π; Or the phase place of described square light hole is π, the phase place of rectangle light hole is 0.
Further, a length of side of described rectangle light hole is equal with the square length of side, and another length of side of rectangle light hole is the half of square light hole, and the center of rectangle light hole exists relative displacement along between minor face length direction and the center of square light hole.
Further, the relative displacement between the center of described rectangle light hole and the center of square light hole is determined by following formula (1):
formula (1)
Wherein, m: be the primitive location parameter in the horizontal direction represented in array hot spot generator, round numbers;
N: the location parameter being the primitive in the vertical direction represented in array hot spot generator, round numbers;
Δ: be represent the foursquare length of side;
δ
mn: represent that location parameter is the relative displacement between the center of rectangle light hole in the primitive of (m, n) and the center of square light hole;
represent that location parameter is the phase value of the primitive present position of (m, n).
Further, in described formula (1)
calculated by following formula (2):
formula (2)
Wherein, hot spot compression ratio β: statement ratio of compression, value is positive integer;
L: the value of the span of regulation β;
Above-mentioned phase value
span be [-π, π].
Above-mentioned specific diffraction distance with the pass of lambda1-wavelength, element width and ratio of compression is: with when β is positive even numbers, and specific diffraction distance value is z=β Δ 2/ λ; When β is positive odd number, specific diffraction distance value is z=2 β Δ 2/ λ, and wherein, λ is lambda1-wavelength.
The number of spots of above-mentioned two-dimensional quadrature array hot spot is relevant with the size of ratio of compression, primitive size and diffraction optical element with the cycle.
Basic thought of the present invention is based on detour phase encoding principle [Appl.Opt.5,967 (1966)], phase-plate in Taibo array hot spot generator is divided into compact arranged sampling unit, again the light hole of a rectangle is put in the middle of each sampling unit, by the position changed between the center of rectangle light hole and sampling center, phase place is encoded.The multistage PHASE DISTRIBUTION of each primitive in Taibo array hot spot generator is encoded into binary (0, π) distribution, thus multistage Taibo array hot spot generator is converted into the array hot spot generator of binary.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of a kind of array hot spot of the present invention production method;
Fig. 2 is the first PHASE DISTRIBUTION schematic diagram of primitive of the present invention;
Fig. 3 is the first geometry cross-sectional schematic of primitive of the present invention;
Fig. 4 is the second PHASE DISTRIBUTION schematic diagram of primitive of the present invention;
Fig. 5 is the second geometry cross-sectional schematic of primitive of the present invention;
The binary phase distribution plan of Fig. 6 to be ratio of compression of the present invention be 10 × 10 array hot spots of β=30;
Fig. 7 is the light path schematic diagram of array hot spot generator of the present invention;
The intensity distribution of Fig. 8 to be ratio of compression of the present invention be 10 × 10 array hot spots of β=30;
The one dimension intensity of Fig. 9 to be ratio of compression of the present invention be 10 × 10 array hot spots of β=30;
The binary phase distribution plan of Figure 10 to be ratio of compression of the present invention be 20 × 20 array hot spots of β=15;
The intensity distribution of Figure 11 to be ratio of compression that the present invention designs be 20 × 20 array hot spots of β=15;
The one dimension intensity of Figure 12 to be ratio of compression that the present invention designs be 20 × 20 array hot spots of β=15.
In accompanying drawing, the list of parts representated by each label is as follows:
1, light source emitter, 2, expand and corrugated reshaper, 3, diffraction optical element, 4, hot spot display surface.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of array hot spot production method of the present invention, specifically comprises the following steps:
Step 1: choose multiple binary primitive, arranges the sizes values Δ of each binary primitive, and hot spot compression ratio β and array hot spot, at one-dimensional square number value M upwards, by above-mentioned setting value, calculate the size value of diffraction optical element;
Step 2: the phase value obtaining all binary primitive positions according to the preset value calculation arranged in step 1
Step 3: the phase value obtained according to step 2
the center of rectangle light hole in all binary primitives and the relative displacement δ at binary primitive center is calculated with all binary primitive sizes values Δs
mn;
Step 4: by M × M binary primitive opsition dependent parameter (m, n) close-packed arrays, produces the binary phase distribution plan of binary primitive;
Step 5: according to binary phase distribution plan, is prepared into diffraction optical element by M × M binary primitive;
Step 6: according to the wavelength X determination diffraction distance of the sizes values Δ of each binary primitive, hot spot compression ratio β and incident light, then incident light produces the orthogonal array hot spot of two-dimentional M × M even intensity distribution after diffraction optical element in this diffraction distance.
Below with incident light wave length λ=633nm, element width Δ=60um, it is example that diffraction optical element is of a size of 18mm × 18mm, designs the specific embodiments of orthogonal array hot spot of a kind of high compression ratio, big figure.
It is the first PHASE DISTRIBUTION schematic diagram of primitive in diffraction optical element of the present invention shown in Fig. 2.As shown in the figure, primitive is be add the rectangle light hole that a phase place is π in the square light hole of 0 in a phase place.For this pure phase position diadactic structure, the method that ripe photoelectron preparation technology photoetching and wet method/dry etching can be adopted to combine is processed.Select lambda1-wavelength to be 633nm in the present embodiment, refractive index be 1.515 BK7 glass be substrate, then corresponding etching depth is 615nm.Its geometrical structure parameter as shown in Figure 3.It is the second PHASE DISTRIBUTION schematic diagram of primitive in diffraction optical element of the present invention shown in Fig. 4.Figure 5 shows that the second geometry schematic diagram of primitive.For two kinds of PHASE DISTRIBUTION of primitive in diffraction optical element of the present invention, the effect producing array hot spot is the same.For the first, implementation result is described in the present embodiment.
In the present embodiment, the physical dimension of square light hole is Δ × Δ=60um × 60um; The physical dimension of rectangle light hole is Δ × Δ/2=60um × 30um.Relative displacement δ is had between the geometric center of rectangle light hole and the geometric center of square light hole
mnΔ, displacement along rectangle minor face x direction, its relative shift δ
mnwith the location parameter m residing for primitive, n is relevant, can be provided by formula (1):
formula (1)
Wherein,
formula (2)
Wherein, the β in formula (2) states ratio of compression, and its value is positive integer; L is the value of the span of regulation β, and value is 0 or positive integer.Wherein,
span be [-π, π], and by the size of diffraction optical element and element width, can in the hope of primitive at one-dimensional square number M=18mm/60um=300 upwards, i.e. m, n ∈ [1,300].
Therefore, by formula (1) and formula (2), the relative displacement of all primitives in all diffraction optical elements can be obtained, and then determine the geometry of each primitive, then all primitives are pressed corresponding location parameter close-packed arrays, obtain the PHASE DISTRIBUTION figure of binary pure phase position diffraction optical element.
The binary pure phase position distribution plan of diffraction optical element when Figure 6 shows that ratio of compression is positive even numbers β=30.The pure PHASE DISTRIBUTION of binary according to Fig. 6, processing obtained pure phase position diffraction optical element, and then apply this diffraction optical element and can produce array hot spot.
Fig. 7 gives the light path schematic diagram of array hot spot generator, the light that light source emitter 1 sends, through expanding and corrugated reshaper 2, becomes even incident coherent plane wave, after diffraction optical element 3, the hot spot display surface 4 of certain diffraction distance produces array hot spot.
The diffraction optical element of different geometry will correspond to different diffraction distance z, and diffraction distance z is relevant with lambda1-wavelength, element width and ratio of compression.When ratio of compression β is positive even numbers, diffraction distance z=β Δ 2/ λ; When ratio of compression β is positive odd number, specific diffraction distance z=2 β Δ 2/ λ.In this example, z=2 × 30 × 602/0.633um=170.6mm is tried to achieve by above-mentioned parameter.Shown in Fig. 8, be the diffracted light intensity distribution of diffraction distance z=170.6mm place simulation, can as seen from Figure 8, this diffraction distance creates 10 × 10 orthogonal array hot spots.Fig. 9 is corresponding one dimension strength distribution curve figure in a lateral direction.As can be seen from the figure the light intensity of array hot spot is equally distributed.Screen periods can be calculated by the physical dimension of diffraction optical element, and the cycle is β × Δ=30 × 60um=1.8mm, the size 18mm × 18mm of diffraction optical element in this example, so the array hot spot number obtained is 10 × 10.
The binary pure phase position distribution plan of diffraction optical element when Figure 10 shows that ratio of compression is positive odd number β=15.When ratio of compression β is positive odd number, specific diffraction distance z=2 β Δ 2/ λ=170.6mm.As shown in figure 11, be the diffracted light intensity distribution of diffraction distance z=170.7mm place simulation, can as seen from Figure 11, this diffraction distance creates orthogonal array hot spot equally.Figure 12 is corresponding one dimension strength distribution curve figure in a lateral direction.As can be seen from the figure obtain the array hot spot of even intensity, but the array hot spot cycle becomes β × Δ=15 × 60um=0.9mm.Size 18mm × the 18mm of diffraction optical element, so the array hot spot number obtained is 20 × 20.
Visible, the present invention can produce the two-dimensional quadrature array hot spot of even intensity distribution, and the number of hot spot is relevant with the size of ratio of compression, primitive size and phase-plate.This array hot spot generator, the manufacture craft of reality can meet completely, and structure is simple, and be easy to processing and copy, cost is lower, therefore can apply widely.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. an array hot spot production method, is characterized in that, specifically comprises the following steps:
Step 1: choose multiple binary primitive, arranges the sizes values Δ of each binary primitive, and hot spot compression ratio β and array hot spot, at one-dimensional square number value M upwards, by above-mentioned setting value, calculate the size value of diffraction optical element;
Step 2: the phase value obtaining all binary primitive positions according to the preset value calculation arranged in step 1
Step 3: the phase value obtained according to step 2
the center of rectangle light hole in all binary primitives and the relative displacement δ at binary primitive center is calculated with all binary primitive sizes values Δs
mn;
Step 4: by M × M binary primitive opsition dependent parameter (m, n) close-packed arrays, produces the binary phase distribution plan of binary primitive;
Step 5: according to binary phase distribution plan, is prepared into diffraction optical element by M × M binary primitive;
Step 6: according to the wavelength X determination diffraction distance of the sizes values Δ of each binary primitive, hot spot compression ratio β and incident light, then incident light produces the orthogonal array hot spot of two-dimentional M × M even intensity distribution after diffraction optical element in this diffraction distance.
2. a kind of array hot spot production method according to claim 1, is characterized in that, by phase value in described step 3
bring following formula (1) into primitive sizes values Δ and carry out calculating the center of rectangle light hole in all primitives and the relative displacement δ at primitive center
mn;
formula (1)
Wherein, m: be the primitive location parameter in the horizontal direction represented in array hot spot generator, round numbers;
N: the location parameter being the primitive in the vertical direction represented in array hot spot generator, round numbers;
Δ: be represent the foursquare length of side; Described each binary primitive is superpose a rectangle light hole in a square light hole, and the center of rectangle light hole is not overlapping with the center of square light hole;
δ
mn: represent that location parameter is the relative displacement between the center of rectangle light hole in the primitive of (m, n) and the center of square light hole;
represent that location parameter is the phase value of the primitive present position of (m, n).
3. a kind of array hot spot production method according to claim 2, is characterized in that, carries out the phase value calculating all primitive positions in described step 2 according to the formula (2) of the following stated
formula (2)
Wherein, hot spot compression ratio β: statement ratio of compression, value is positive integer;
L: the value of the span of regulation β;
Above-mentioned phase value
span be [-π, π].
4. a kind of array hot spot production method according to any one of claim 1-3, is characterized in that, the method processing diffraction optical element adopting photoelectron preparation technology photoetching and wet etching to combine in described step 5; Or the method processing diffraction optical element adopting photoelectron preparation technology's photoetching and dry etching to combine.
5. an array hot spot generator, is characterized in that, comprise set gradually along same axis light source emitter, expand and corrugated reshaper, diffraction optical element and hot spot display surface;
Described light source emitter is used for sending coherent light;
Describedly to expand and the coherent light of incidence expands as coherent plane light by corrugated reshaper;
The coherent plane light of incidence is carried out diffraction by described diffraction optical element; Make hot spot display surface to present two-dimensional quadrature array hot spot;
Described diffraction optical element is by M × M binary primitive opsition dependent parameter (m, n) close-packed arrays, produces the binary phase distribution plan of binary primitive; And according to binary phase distribution plan, by the diffraction optical element that M × M binary primitive is prepared into; Wherein, each binary primitive is the PHASE DISTRIBUTION of binary; Described each binary primitive is superpose a rectangle light hole in a square light hole, and the center of rectangle light hole is not overlapping with the center of square light hole.
6. a kind of array hot spot generator according to claim 5, is characterized in that, the phase place of described square light hole is 0, and the phase place of rectangle light hole is π; Or the phase place of described square light hole is π, the phase place of rectangle light hole is 0.
7. a kind of array hot spot generator according to claim 6, it is characterized in that, one length of side of described rectangle light hole is equal with the square length of side, another length of side of rectangle light hole is the half of square light hole, and the center of rectangle light hole exists relative displacement along between minor face length direction and the center of square light hole.
8. a kind of array hot spot generator according to any one of claim 5-7, it is characterized in that, the relative displacement between the center of described rectangle light hole and the center of square light hole is determined by following formula (1):
formula (1)
Wherein, m: be the primitive location parameter in the horizontal direction represented in array hot spot generator, round numbers;
N: the location parameter being the primitive in the vertical direction represented in array hot spot generator, round numbers;
Δ: be represent the foursquare length of side;
δ
mn: represent that location parameter is the relative displacement between the center of rectangle light hole in the primitive of (m, n) and the center of square light hole;
represent that location parameter is the phase value of the primitive present position of (m, n).
9. a kind of array hot spot generator according to claim 8, is characterized in that, in described formula (1)
calculated by following formula (2):
formula (2)
Wherein, hot spot compression ratio β: statement ratio of compression, value is positive integer;
L: the value of the span of regulation β;
Above-mentioned phase value
span be [-π, π].
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| CN105242413A (en) * | 2015-09-02 | 2016-01-13 | 鲁东大学 | Hexagonal array spiral phase plate and manufacturing method |
| CN105242398A (en) * | 2015-10-08 | 2016-01-13 | 鲁东大学 | Hexagon Talbot array illuminator and manufacturing method thereof |
| CN106932914A (en) * | 2017-04-17 | 2017-07-07 | 鲁东大学 | A kind of production method and device of cubical array hollow light spot |
| EP3676655A4 (en) * | 2017-08-28 | 2021-06-02 | Heptagon Micro Optics Pte. Ltd. | Structured light projection |
| JP2019203960A (en) * | 2018-05-22 | 2019-11-28 | 日本電信電話株式会社 | Diffraction element |
| CN112098980B (en) * | 2020-07-19 | 2024-07-02 | 武汉光谷航天三江激光产业技术研究院有限公司 | GM-APD array camera performance index testing device and method |
| CN112965242B (en) * | 2021-02-02 | 2023-04-07 | 奥比中光科技集团股份有限公司 | Under-screen speckle projection module, design method, display device and terminal device |
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| CN102023387A (en) * | 2009-09-16 | 2011-04-20 | 中国科学院微电子研究所 | Array ring-belt photon sieve light equalizer and manufacturing method thereof |
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| CN102681170A (en) * | 2009-09-16 | 2012-09-19 | 中国科学院微电子研究所 | Method for manufacturing array part annulus photon sieve dodging device |
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