CN104101735A - Fringe effect based capacitance type micro inertial sensor with self-calibrating - Google Patents
Fringe effect based capacitance type micro inertial sensor with self-calibrating Download PDFInfo
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- CN104101735A CN104101735A CN201410333505.XA CN201410333505A CN104101735A CN 104101735 A CN104101735 A CN 104101735A CN 201410333505 A CN201410333505 A CN 201410333505A CN 104101735 A CN104101735 A CN 104101735A
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Abstract
The invention relates to a fringe effect based capacitance type micro inertial sensor with self-calibrating. The existing sensor having the self-calibrating function is small in calibrating range. Sensor blocks are rectangular silicon wafers etched with grid-shaped wells; four corresponding ends are connected with anchor points through silicon supporting beams; the four corresponding ends are correspondingly provided with rectangular silicon strips in the same number; comb type silicon strips which are connected with the sensor mass blocks, fixed detection silicon strips, grid-shaped electrodes and grid-shaped aluminum electrodes on the surface of a substrate are formed into detection capacitance. When acceleration speed signals are loaded in the mass block sensitive directions, silicon strip groups on the sensor mass blocks cut electric field lines of substrate fringe electric fields and then the substrate fringe capacitance is changed; the size of the loaded acceleration speed is detected due to detection of the capacitance change of the micro inertial sensor. The existing sensor having the self-calibrating function has the advantages of increasing vibrator quality, reducing pull-in and brown noise, increasing detection capacitance and reducing pressed film air damping.
Description
Technical field
The invention belongs to micro-electronic mechanical skill field, relate to a kind of micro-inertia sensor, be specifically related to a kind of high precision micro-inertia sensor containing self calibrating function based on edge effect.
Background technology
After acceleration transducer emerges, always as one of most important inertia type instrument, be used in inertial navigation and inertial guidance system, link together and come into one's own with the automatic Pilot of aeroamphibious sky carrier and the zero-miss guidance of advanced technology weapon.Micro-machine acceleration transducer is little with its weight, cost is low, low in energy consumption, volume is little, overload capacity is strong, easy of integration and the advantage such as can be mass, not only become the core parts of MIMU (Micro Inertial Measurement Unit) in some high-tech arms (MIMU), at commercial and civil area, there is too wide market, such as vehicle control, General Aviation, toy, high ferro, industry, mine locating etc.Traditional high precision acceleration transducer, conventional machinery shaking table is demarcated, and this method is the working environment of analog acceleration sensor really, and ratio of precision is higher, is the most reliable method.But this shaking table is not only expensive, and demarcate inefficiency.Micro mechanical sensor is due to production in enormous quantities, and the method drawback that shaking table is demarcated is one by one more obvious, cannot meet the requirement of demarcating in batches.Someone studied with electrostatic force sensor was carried out to self-calibration successively afterwards, and the inertial force that replaces extraneous acceleration to produce, can reduce costs, and improved and demarcated efficiency.The invention provides a kind of bidirectional micro-inertia sensor with self-calibration structure based on edge effect, by the voltage between broach, produce electrostatic force, simulate the inertial force that extraneous acceleration produces, drive mass to be offset.Meanwhile, utilize the variation of edge effect between electric capacity to realize the detection of mass side-play amount.The present invention adopts bulk micromachining, and meanwhile, the grating structure of mass is not exclusively carved the quality of wearing further to improve sensor, thereby reduces mechanical noise, improves stability, improves sensitivity.
Summary of the invention
The object of the invention is to provide a kind of bidirectional micro-inertia sensor with self-calibration structure based on edge effect.
Condenser type micro-inertia sensor provided by the invention comprises glass substrate, sensor mass and fixed test silicon strip.
On sensor mass, be provided with two groups for the responsive grid shape silicon strip group detecting of directions X and two groups of grid shape silicon strip groups for the responsive detection of Y-direction, for the responsive silicon strip group detecting of directions X with for the responsive silicon strip composition matrix pattern detecting of Y-direction, be staggered.Four corresponding end of sensor mass are connected with sensor anchor point by the U-shaped silicon brace summer of sensor, and sensor anchor point is fixedly installed in glass substrate.
In glass substrate, be provided with four groups of Differential Detection modules, be respectively the detection module of two directions Xs and the detection module of two Y-directions, described detection module is the thin aluminium electrode in glass substrate, and aluminium thickness of electrode is much smaller than the spacing between aluminium electrode.
Directly over two groups of two groups of directions Xs detection aluminium electrodes that arrange in glass substrate for the responsive grid shape silicon strip group detecting of directions X on sensor mass, and quantity is identical, position is corresponding, forms two groups of directions X Differential Detection electric capacity.Two groups of aluminium electrode groups of Differential Detection electric capacity and grid shape silicon strip group are symmetrical up and down, and the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane.Directly over two groups of two groups of Y-directions detection aluminium electrodes that arrange in glass substrate for the responsive grid shape silicon strip group detecting of Y-direction on sensor mass, and quantity is identical, position is corresponding, form two groups of Y-direction Differential Detection electric capacity, two groups of aluminium electrode groups of Differential Detection electric capacity and grid shape silicon strip group are symmetrical up and down, the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane.
The fixed test silicon strip of eight comb teeth-shapeds is fixedly installed in glass substrate, fixed test silicon strip is comprised of the rectangle silicon strip of comb teeth bar and connection comb teeth bar, comb teeth bar position in the comb teeth-shaped silicon strip group that the comb teeth bar of each fixed test silicon strip connects with sensor mass is corresponding, and the comb teeth bar in the comb teeth bar of fixed test silicon strip and comb teeth-shaped silicon strip group forms Detection capacitance; Eight fixed test comb teeth bars are connected anchor point by the lead-in wire in glass substrate with outside and connect.
Corresponding four the sensor anchor point positions of glass substrate surface are provided with four sensor mass anchor points, and sensor mass solder joint is connected with sensor anchor point; The corresponding sensor mass of glass substrate surface is provided with grid shape aluminium electrode.
The micro-inertia sensor the present invention relates to includes the double grid shape oscillator that can move at directions X to the double grid shape oscillator pair moving with Y-direction, the initial separation that can design sensor Detection capacitance is larger, thereby solving dark reaction particle etching depth-to-width ratio is less than 27:1 and can not does thick restriction to the quality of sensor vibration generator, increased the initial mass piece electric capacity of sensor to increase the calibration range of sensor, then by applying voltage, produce electrostatic force and drive sensitive-mass piece, make sensitive-mass piece on sensitive direction, produce skew, be equivalent to and apply extraneous acceleration, realize self calibrating function.In addition, by changing the size of sensor brace summer and mass, can also change range and the response characteristic of sensor.When loading acceleration signal on mass sensitive direction, the electric field line of silicon strip group cutting edges of substrate electric field on siliceous gauge block, thereby edges of substrate electric capacity changes, by Edge detected capacitance variations and detection comb gate capacitance, change to obtain the size of the acceleration loading on sensitive direction.
Micro-inertia sensor provided by the invention has increased oscillator quality greatly, thereby has reduced Blang's noise, has reduced capacitor plate spacing, increased mass initial capacitance, increase calibration range, reduced press mold air damping simultaneously, thereby reduced mechanical noise and circuit noise.And the broach of variable area formula to and sensor mass on grid-shaped strip between capacitance difference componental movement time air damping show as slide-film damping, thereby reduced Blang's noise, increased Detection capacitance simultaneously.
The high precision micro-inertia sensor novel structure the present invention relates to, resolution and highly sensitive, manufacture craft is simple, is conducive to reduce costs and improve yield rate, is a kind of micro-inertia sensor that can practical application.
Accompanying drawing explanation
Fig. 1 is the structural representation of patent of the present invention;
Fig. 2 is glass substrate and lip-deep structural representation in Fig. 1;
Fig. 3 is the structure vertical view of mass in Fig. 1;
Fig. 4 is the sectional view of grizzly bar shape well of the present invention.
Embodiment
As shown in Fig. 1,2,3 and 4, a kind of micro-inertia sensor with self-calibration comprises glass substrate 1, sensor mass 22, fixed test silicon strip 14.
On sensor mass 22, being provided with between two groups of grid shape silicon strip group 23(silicon strips for the responsive detection of directions X and silicon strip is gap 20) and two groups of grid shape silicon strip groups 19 that detect for Y-direction sensitivity, for the responsive silicon strip group 23 detecting of directions X, be staggered with the 19 one-tenth matrix patterns of silicon strip group for the responsive detection of Y-direction, be that the responsive silicon strip group 23 detecting of a pair of directions X is in diagonally opposing corner, a pair of for the responsive silicon strip group 19 detecting of Y-direction also in diagonally opposing corner, two groups of grid shape sensor masses that form directions X for the responsive grid shape silicon strip group detecting 23 of directions X, two groups of grid shape sensor masses 18 that form Y-direction for the responsive grid shape silicon strip group detecting 19 of Y-direction.Four corresponding end of sensor mass 22 are connected with sensor anchor point 15 by the U-shaped silicon brace summer 16 of sensor, and sensor anchor point 15 is fixedly installed in glass substrate.
In glass substrate, be provided with four groups of Differential Detection modules, be respectively the detection module 7,9 of 10,11 and two Y-directions of detection module of two directions Xs, described detection module is the thin aluminium electrode in glass substrate, and aluminium thickness of electrode is much smaller than the spacing between aluminium electrode.Common port 9,10 is realized outside lead by outside solder joint 8 and is connected; Thin aluminium electrode 7,11 5 is connected to outside solder joint 6 by going between, and realizes outside lead and connects.
Directly over two groups of two groups of directions Xs detection aluminium electrodes 10,11 that arrange in glass substrate for the responsive silicon strip group 19 detecting of directions X on siliceous gauge block, and quantity is identical, position is corresponding, forms two groups of directions X Differential Detection electric capacity.Two groups of aluminium electrode groups of Differential Detection electric capacity and silicon strip group are symmetrical up and down, and the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane.Directly over two groups of two groups of Y-directions detection aluminium electrodes 7,9 that arrange in glass substrate for the responsive silicon strip group 23 detecting of Y-direction on siliceous gauge block, and quantity is identical, position is corresponding, form two groups of Y-direction Differential Detection electric capacity, two groups of aluminium electrode groups of Differential Detection electric capacity and silicon strip group are symmetrical up and down, the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane.
The fixed test silicon strip 21 of four groups of comb teeth-shapeds is fixedly installed in glass substrate 1, fixed test silicon strip 21 is comprised of the rectangle silicon strip 14 of comb teeth bar 12 and connection comb teeth bar 12, and the comb teeth bar 12 of each fixed test silicon strip 21 is corresponding with silicon strip 13 positions that sensor mass 22 connects; The silicon strip 13 that the comb teeth bar 12 of fixed test silicon strip 21 connects with corresponding sensor mass forms Detection capacitance, forms gap 17; Four fixed test silicon strips 21 are connected with solder joint 3 by the lip-deep lead-in wire 4 of glass substrate 1.
Glass substrate 1 corresponding four sensor anchor point 15 positions, surface are provided with four sensor mass solder joints 2, and sensor mass solder joint 2 is connected with sensor anchor point 15.The surperficial corresponding sensor mass of glass substrate 1 22 positions are provided with grid shape aluminium electrode 7,9.
In conjunction with Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fundamentals of Sensors are described.The self calibrating function of this sensor is to utilize outside gold ball bonding technology that fixedly silicon strip solder joint and encapsulating shell pin are connected to and on mass, apply voltage, the electrostatic force producing is equivalent to the extraneous acceleration that will apply, make sensitive-mass piece on sensitive direction, produce skew, the broach of variable area formula to sensor mass on newly-increased grid-shaped strip well capacitance difference componental movement detect the side-play amount of sensitive-mass piece.
This micro-inertia sensor adopts comb gate capacitance detection architecture, utilizes the mode of broach and two kinds of Detection capacitances of grid shape to come Detection capacitance to change.The acceleration producing when extraneous inertial signal acts on sensor sensing direction constantly, on the one hand, the electric field line of grid shape silicon strip group cutting edges of substrate electric field on siliceous gauge block 9, thereby edges of substrate electric capacity changes, in grid shape capacitive detecting structure, the right grid shape silicon strip group 23 of grid shape oscillator changes with the overlapping area of grid shape aluminium electrode 24, causes that differential capacitance changes; On the other hand, the stack area between movable comb electrodes 12 and fixed fingers electrode 13 and distance also change, and therefore, can detect the acceleration magnitude loading on sensitive direction by calculating the variation size of capacitance.
The high precision micro-inertia sensor of the present invention's design, pass through appropriate design, make sensor in X and Y-direction, there is number and the area of identical edge capacitance, realize the symmetry of performance in X, Y-direction, and on sensor mass, there are the grid-shaped strip well electric capacity of slide-film damping and the broach of variable area formula to electric capacity is detected, under normal pressure, there is less air damping, thereby make sensor can reach very high precision.In addition, by changing the size of brace summer, can change range and the response characteristic of sensor.
The micro-inertia sensor detecting based on edge capacitance the present invention relates to is adopted as mechanical technique and makes, novel structure, resolution and highly sensitive, manufacture craft is simple, being conducive to reduce costs and improve yield rate, is a kind of micro-inertia sensor that can practical application.
Claims (1)
1. the condenser type micro-inertia sensor that the oneself of the band based on edge effect demarcates, comprises glass substrate, sensor mass and fixed test silicon strip, it is characterized in that:
On sensor mass, be provided with two groups for the responsive grid shape silicon strip group detecting of directions X and two groups of grid shape silicon strip groups for the responsive detection of Y-direction, for the responsive silicon strip group detecting of directions X with for the responsive silicon strip composition matrix pattern detecting of Y-direction, be staggered; Four corresponding end of sensor mass are connected with sensor anchor point by the U-shaped silicon brace summer of sensor, and sensor anchor point is fixedly installed in glass substrate;
In glass substrate, be provided with four groups of Differential Detection modules, be respectively the detection module of two directions Xs and the detection module of two Y-directions, described detection module is the thin aluminium electrode in glass substrate, and thin aluminium thickness of electrode is much smaller than the spacing between aluminium electrode;
Directly over two groups of two groups of directions Xs detection aluminium electrodes that arrange in glass substrate for the responsive grid shape silicon strip group detecting of directions X on sensor mass, and quantity is identical, position is corresponding, forms two groups of directions X Differential Detection electric capacity; Two groups of aluminium electrode groups of Differential Detection electric capacity and grid shape silicon strip group are symmetrical up and down, and the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane; Directly over two groups of two groups of Y-directions detection aluminium electrodes that arrange in glass substrate for the responsive grid shape silicon strip group detecting of Y-direction on sensor mass, and quantity is identical, position is corresponding, form two groups of Y-direction Differential Detection electric capacity, two groups of aluminium electrode groups of Differential Detection electric capacity and grid shape silicon strip group are symmetrical up and down, the width of aluminium electrode is slightly larger than corresponding silicon strip, aluminium electrode and silicon strip near center one side in same vertical plane;
The fixed test silicon strip of eight comb teeth-shapeds is fixedly installed in glass substrate, fixed test silicon strip is comprised of the rectangle silicon strip of comb teeth bar and connection comb teeth bar, comb teeth bar position in the comb teeth-shaped silicon strip group that the comb teeth bar of each fixed test silicon strip connects with sensor mass is corresponding, and the comb teeth bar in the comb teeth bar of fixed test silicon strip and comb teeth-shaped silicon strip group forms Detection capacitance; Eight fixed test comb teeth bars are connected anchor point by the lead-in wire in glass substrate with outside and connect;
Corresponding four the sensor anchor point positions of glass substrate surface are provided with four sensor mass anchor points, and sensor mass solder joint is connected with sensor anchor point; The corresponding sensor mass of glass substrate surface is provided with grid shape aluminium electrode.
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Cited By (2)
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|---|---|---|---|---|
| CN107064558A (en) * | 2016-12-09 | 2017-08-18 | 杭州电子科技大学 | A kind of capacitance acceleration transducer with self-calibration shake table |
| CN112611889A (en) * | 2020-12-08 | 2021-04-06 | 中国人民解放军陆军步兵学院石家庄校区 | Self-calibration method of micro-mechanical accelerometer based on electrostatic equivalent effect |
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| CN102759637A (en) * | 2011-04-26 | 2012-10-31 | 中国科学院上海微***与信息技术研究所 | MEMS (micro electro mechanical system) triaxial acceleration transducer and manufacture method thereof |
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| CN201569671U (en) * | 2009-12-29 | 2010-09-01 | 杭州电子科技大学 | Folding beam type bi-directional micro-inertial sensor |
| CN201589787U (en) * | 2009-12-29 | 2010-09-22 | 杭州电子科技大学 | Capacitance type bidirectional micro inertial sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107064558A (en) * | 2016-12-09 | 2017-08-18 | 杭州电子科技大学 | A kind of capacitance acceleration transducer with self-calibration shake table |
| CN107064558B (en) * | 2016-12-09 | 2019-04-05 | 杭州电子科技大学 | A kind of capacitance acceleration transducer with self-calibration shake table |
| CN112611889A (en) * | 2020-12-08 | 2021-04-06 | 中国人民解放军陆军步兵学院石家庄校区 | Self-calibration method of micro-mechanical accelerometer based on electrostatic equivalent effect |
| CN112611889B (en) * | 2020-12-08 | 2022-04-05 | 中国人民解放军陆军步兵学院石家庄校区 | Self-calibration method of micro-mechanical accelerometer based on electrostatic equivalent effect |
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