CN104090429B - 阵列基板及其制作方法和液晶显示装置 - Google Patents
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 230000000903 blocking effect Effects 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 39
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 74
- 238000001259 photo etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
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Abstract
本发明公开了一种阵列基板及其制作方法和液晶显示装置,涉及液晶显示技术领域,能够防止在存在高度差的位置制作狭缝电极的狭缝末端,使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。该阵列基板包括:由数行栅线和数列数据线交叉定义的数个子像素单元,每个所述子像素单元中设置有第一电极和位于所述第一电极下方的公共电极线,所述第一电极为狭缝电极,在每个所述子像素单元中,所述公共电极线与所述第一电极之间设置有挡光层,所述第一电极的狭缝末端、所述公共电极线以及靠近所述狭缝末端的公共电极线边缘均位于所述挡光层区域内。
Description
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种阵列基板及其制作方法和液晶显示装置。
背景技术
高级超维场开关(Advanced-Super Dimensional Switching,简称ADS)模式是平面电场宽视角核心技术,具体为通过同一平面内狭缝电极边缘所产生的电场以及狭缝电极层与板状电极层间产生的电场形成多维电场,使液晶盒内狭缝电极间、电极正上方所有取向液晶分子都能够产生旋转,从而提高了液晶工作效率。
ADS模式高解析度的显示装置由于子像素单位面积小,造成存储电容容量不够,因此需要在栅极层制造公共电极线以增加存储电容,但由于受到曝光机解析度的限制,公共电极线的有效面积设计受限。如图1、图2和图3所示,公共电极线1位于第一电极2(狭缝电极)的狭缝21末端附近,由于公共电极线1的一条边缘位于狭缝21末端处,公共电极线1不透光,但是公共电极线1附近的基板均为透光的,因此在狭缝电极的制作过程中,公共电极线1边缘处的两侧分别为挡光和透光状态,这两种状态会对光刻过程中的光产生不同影响,使得光刻结束后在该处的光刻胶厚度不均,从而在后续刻蚀工艺过程中使该处的图像变形,造成狭缝电极的狭缝21末端处的图案与预先设计的图案产生偏差,造成该处的液晶分子偏转不良,从而产生压痕(trace mura)现象。
发明内容
本发明提供一种阵列基板及其制作方法和液晶显示装置,能够使狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。
为解决上述技术问题,本发明采用如下技术方案:
一方面,提供一种阵列基板,包括:由数行栅线和数列数据线交叉定义的数个子像素单元,每个所述子像素单元中设置有第一电极和位于所述第一电极下方的公共电极线,所述第一电极为狭缝电极,
在每个所述子像素单元中,所述公共电极线与所述第一电极之间设置有挡光层,所述第一电极的狭缝末端、所述公共电极线以及靠近所述狭缝末端的公共电极线边缘均位于所述挡光层区域内。
具体地,在每个所述子像素单元中,所述第一电极和公共电极线之间设置有第二电极;
所述挡光层设置于所述公共电极线与所述第二电极之间;
所述第一电极为公共电极,所述第二电极为像素电极;
所述挡光层由导电材料制成且所述挡光层连接于所述公共电极线。
具体地,所述挡光层与所述公共电极线之间设置有第一绝缘层,所述第一绝缘层上所述挡光层与所述公共电极线重叠处设置有绝缘层过孔,所述挡光层通过所述绝缘层过孔连接于所述公共电极线。
具体地,所述挡光层与所述第二电极之间设置有第二绝缘层;
所述第二电极与所述第一电极之间设置有第三绝缘层。
另一方面,提供一种液晶显示装置,包括上述的阵列基板。
另一方面,提供一种阵列基板的制作方法,包括:
在基板上形成公共电极线;
在包括所述公共电极线的基板上形成挡光层;
在包括所述挡光层的基板上形成第一电极,所述第一电极为狭缝电极,在每个子像素单元中,所述第一电极的狭缝末端、所述公共电极线以及靠近所述狭缝末端的公共电极线边缘均位于所述挡光层区域内。
具体地,所述在包括所述公共电极线的基板上形成挡光层为:
在包括所述公共电极线的基板上形成由导电材料制成的所述挡光层,所述挡光层连接于所述公共电极线;
所述在包括所述挡光层的基板上形成第一电极之前还包括:
在包括所述挡光层的基板上形成第二电极,所述第二电极为像素电极。
具体地,所述在包括所述公共电极线的基板上形成挡光层之前还包括:
在形成所述公共电极线的基板上形成第一绝缘层,所述第一绝缘层上所述挡光层与所述公共电极线重叠处设置有绝缘层过孔,所述绝缘层过孔用于使所述挡光层与所述公共电极线连接。
具体地,所述在包括所述挡光层的基板上形成第二电极之前还包括:
在包括所述挡光层的基板上形成第二绝缘层;
所述在包括所述挡光层的基板上形成第一电极之前还包括:
在包括所述第二电极的基板上形成第三绝缘层。
本发明提供的阵列基板及其制作方法和液晶显示装置,由于阵列基板中挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术中一种阵列基板的结构示意图;
图2为图1的阵列基板中A区域的局部放大示意图;
图3为图2的阵列基板中BB’向的截面示意图;
图4为本发明实施例中一种阵列基板的结构示意图;
图5为图4的阵列基板中B区域的局部放大示意图;
图6为图4的阵列基板中CC’向的截面示意图;
图7为本发明实施例中一种阵列基板的制作方法流程图;
图8为本发明实施例中另一种阵列基板的制作方法流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图4、图5和图6所示,本发明实施例提供一种阵列基板,包括:由数行栅线和数列数据线交叉定义的数个子像素单元3,每个子像素单元3中设置有第一电极2和位于第一电极2下方的公共电极线1,第一电极2为狭缝电极,在每个子像素单元3中,公共电极线1与第一电极2之间设置有挡光层4,第一电极2的狭缝21末端、公共电极线1以及靠近狭缝21末端的公共电极线1边缘均位于挡光层4区域内。
需要说明的是,在每个子像素单元3中,第一电极2与公共电极线1之间设置有第二电极5,挡光层4并不限于设置于公共电极线1与第二电极5之间,挡光层也可以设置于第二电极与第一电极之间(图中未示出)。另外,上述第一电极2可以为公共电极,此时第二电极5为像素电极;或者第一电极2可以为像素电极,此时第二电极5为公共电极。第二电极5可以为板状电极或狭缝电极。
本发明实施例中的阵列基板,由于挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。
具体地,在每个子像素单元3中,如图6所示,第一电极2和公共电极线1之间设置有第二电极5;挡光层4设置于公共电极线1与第二电极5之间;第一电极2为公共电极,第二电极5为像素电极;挡光层4由导电材料(例如金属)制成且挡光层4连接于公共电极线1。子像素的存储电容包括第一电极2与第二电极5重叠的区域形成的电容以及第二电极5与挡光层4之间形成的电容。传统ADS模式高解析度的显示装置中公共电极线1与第二电极5之间形成的电容容量较小,而本实施例中挡光层4为导电材料且与公共电极线1连接,相当于增大了两个电极之间的重叠面积,从而提高了存储电容的容量。
具体地,挡光层4与公共电极线1之间设置有第一绝缘层6,第一绝缘层6上挡光层4与公共电极线1重叠处设置有绝缘层过孔61,挡光层4通过绝缘层过孔61连接于公共电极线1。公共电极线1与栅线(图中未示出)属于同一层,第一绝缘层6实际为现有的栅极绝缘层。
具体地,挡光层4与第二电极5之间设置有第二绝缘层7,第二绝缘层7用于挡光层4与第二电极5之间的绝缘并且作为电容介质使挡光层4与第二电极5之间形成电容;第二电极5与第一电极2之间设置有第三绝缘层8,第三绝缘层8为现有的钝化层,并且作为第二电极5与第一电极2之间的电容介质。
本发明实施例中的阵列基板,由于挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。并且通过导电的挡光层与公共电极线连接,从而增大了公共电极线与板状电极之间形成的电容容量,即增大了子像素的存储电容容量。
本发明实施例提供一种液晶显示装置,包括上述的阵列基板。
该阵列基板的具体结构和原理与上述实施例相同,在此不再赘述。该液晶显示装置具体可以为:液晶面板、液晶电视、液晶显示器、数码相框、手机等等。
本实施例中的液晶显示装置,由于阵列基板中挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。并且通过导电的挡光层与公共电极线连接,从而增大了公共电极线与像素电极之间形成的电容容量,即增大了子像素的存储电容容量。
如图7所示,本发明实施例提供一种阵列基板的制作方法,包括:
步骤101、如图6所示,在基板上形成公共电极线1;
步骤102、在包括公共电极线1的基板上形成挡光层4;
步骤103、在包括挡光层4的基板上形成第一电极2,第一电极2为狭缝电极,在每个子像素单元中,第一电极2的狭缝21末端、公共电极线1以及靠近狭缝21末端的公共电极线1边缘均位于挡光层4区域内。
该阵列基板的具体结构和原理与上述实施例相同,在此不再赘述。
本实施例中的阵列基板的制作方法制作的阵列基板,由于挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。
具体地,如图8所示,上述步骤102、在包括公共电极线1的基板上形成挡光层4具体为:
步骤1021、如图6所示,在包括公共电极线1的基板上形成由导电材料制成的挡光层4,挡光层4连接于公共电极线1;
上述步骤103、在包括挡光层4的基板上形成第一电极2之前还包括:
步骤1023、在包括挡光层4的基板上形成第二电极5,第二电极5为像素电极。
上述步骤102、在包括公共电极线1的基板上形成挡光层4之前还包括:
步骤1011、在形成公共电极线的基板上形成第一绝缘层6,第一绝缘层6上挡光层4与公共电极线1重叠处设置有绝缘层过孔61,绝缘层过孔61用于使挡光层4与公共电极线1连接。
上述步骤1023、在包括挡光层4的基板上形成第二电极5之前还包括:
步骤1022、在包括挡光层4的基板上形成第二绝缘层7;
上述步骤103、在包括挡光层的基板上形成第一电极之前还包括:
步骤1024、在包括第二电极5的基板上形成第三绝缘层8。
该阵列基板的具体结构和原理与上述实施例相同,在此不再赘述。
本实施例中的阵列基板的制作方法制作的阵列基板,由于挡光层的设置,使得在制作狭缝电极之前,公共电极线和狭缝电极的狭缝末端均位于挡光层区域内,挡光层区域内的光线均被阻挡,因此在狭缝电极的制作过程中,狭缝电极的狭缝末端处附近均位于挡光状态,使得光刻结束后在该处的光刻胶厚度趋于一致,从而使得狭缝电极的狭缝末端图形与预设图形一致,从而避免了压痕(trace mura)现象。并且通过导电的挡光层与公共电极线连接,从而增大了公共电极线与像素电极之间形成的电容容量,即增大了子像素的存储电容容量。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (9)
1.一种阵列基板,包括:由数行栅线和数列数据线交叉定义的数个子像素单元,每个所述子像素单元中设置有第一电极和位于所述第一电极下方的公共电极线,所述第一电极为狭缝电极,其特征在于,
在每个所述子像素单元中,所述公共电极线与所述第一电极之间设置有挡光层,所述第一电极的狭缝末端、所述公共电极线以及靠近所述狭缝末端的公共电极线边缘均位于所述挡光层区域内;
所述挡光层与所述公共电极线之间设置有第一绝缘层。
2.根据权利要求1所述的阵列基板,其特征在于,
在每个所述子像素单元中,所述第一电极和公共电极线之间设置有第二电极;
所述挡光层设置于所述公共电极线与所述第二电极之间;
所述第一电极为公共电极,所述第二电极为像素电极;
所述挡光层由导电材料制成且所述挡光层连接于所述公共电极线。
3.根据权利要求1所述的阵列基板,其特征在于,
所述第一绝缘层上所述挡光层与所述公共电极线重叠处设置有绝缘层过孔,所述挡光层通过所述绝缘层过孔连接于所述公共电极线。
4.根据权利要求2所述的阵列基板,其特征在于,
所述挡光层与所述第二电极之间设置有第二绝缘层;
所述第二电极与所述第一电极之间设置有第三绝缘层。
5.一种液晶显示装置,其特征在于,包括如权利要求1至4中任意一项所述的阵列基板。
6.一种阵列基板的制作方法,其特征在于,包括:
在基板上形成公共电极线;
在形成所述公共电极线的基板上形成第一绝缘层;
在包括所述公共电极线的基板上形成挡光层;
在包括所述挡光层的基板上形成第一电极,所述第一电极为狭缝电极,在每个子像素单元中,所述第一电极的狭缝末端、所述公共电极线以及靠近所述狭缝末端的公共电极线边缘均位于所述挡光层区域内。
7.根据权利要求6所述的阵列基板的制作方法,其特征在于,
所述在包括所述公共电极线的基板上形成挡光层为:
在包括所述公共电极线的基板上形成由导电材料制成的所述挡光层,所述挡光层连接于所述公共电极线;
所述在包括所述挡光层的基板上形成第一电极之前还包括:
在包括所述挡光层的基板上形成第二电极,所述第二电极为像素电极。
8.根据权利要求6所述的阵列基板的制作方法,其特征在于,
所述在包括所述公共电极线的基板上形成挡光层之前还包括:
所述第一绝缘层上所述挡光层与所述公共电极线重叠处设置有绝缘层过孔,所述绝缘层过孔用于使所述挡光层与所述公共电极线连接。
9.根据权利要求7所述的阵列基板的制作方法,其特征在于,
所述在包括所述挡光层的基板上形成第二电极之前还包括:
在包括所述挡光层的基板上形成第二绝缘层;
所述在包括所述挡光层的基板上形成第一电极之前还包括:
在包括所述第二电极的基板上形成第三绝缘层。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6462800B1 (en) * | 1999-06-30 | 2002-10-08 | Hyundai Display Technology Inc. | Electrode contact structure for a liquid crystal display device and manufacturing method thereof |
CN1945838A (zh) * | 2006-10-27 | 2007-04-11 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN102053439A (zh) * | 2010-11-24 | 2011-05-11 | 深圳市华星光电技术有限公司 | 像素单元以及液晶显示面板 |
CN103489824A (zh) * | 2013-09-05 | 2014-01-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法与显示装置 |
CN103700628A (zh) * | 2013-12-26 | 2014-04-02 | 京东方科技集团股份有限公司 | 阵列基板制作方法、阵列基板及显示装置 |
Family Cites Families (7)
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JP3914913B2 (ja) * | 2003-11-28 | 2007-05-16 | 鹿児島日本電気株式会社 | 液晶表示装置 |
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TW201200948A (en) * | 2010-06-22 | 2012-01-01 | Au Optronics Corp | Pixel structure and method for manufacturing the same |
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-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6462800B1 (en) * | 1999-06-30 | 2002-10-08 | Hyundai Display Technology Inc. | Electrode contact structure for a liquid crystal display device and manufacturing method thereof |
CN1945838A (zh) * | 2006-10-27 | 2007-04-11 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN102053439A (zh) * | 2010-11-24 | 2011-05-11 | 深圳市华星光电技术有限公司 | 像素单元以及液晶显示面板 |
CN103489824A (zh) * | 2013-09-05 | 2014-01-01 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法与显示装置 |
CN103700628A (zh) * | 2013-12-26 | 2014-04-02 | 京东方科技集团股份有限公司 | 阵列基板制作方法、阵列基板及显示装置 |
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