CN104084659A - Production method for preparing transistor through hot-gas welding - Google Patents
Production method for preparing transistor through hot-gas welding Download PDFInfo
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- CN104084659A CN104084659A CN201410311524.2A CN201410311524A CN104084659A CN 104084659 A CN104084659 A CN 104084659A CN 201410311524 A CN201410311524 A CN 201410311524A CN 104084659 A CN104084659 A CN 104084659A
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- heating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/012—Soldering with the use of hot gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a production method for preparing a transistor through hot-gas welding. A chip and a lead frame are welded through the combination between segmented gradient preheating and hot-gas welding. A layer arrangement method of a first bonding layer and a second weldable layer is adopted in the welding process. Welding defects produced during welding are better eliminated, and meanwhile cold joints are reduced. The production method for preparing the transistor is high in efficiency, good in quality and low in cost.
Description
Technical field
The present invention relates to a kind of transistorized production method, relate in particular to the production method of its high-capacity transistor.
Background technology
Power transistor is applicable to by series voltage regulator and switching regulator and other the easy power circuit that surge occurs etc. controlled by two chip blocks formations of integrated circuit (IC) and power transistor.The main application of chip of high-capacity transistor comprises the Switching Power Supply of household electrical appliance, as TV, microcomputer, Household induction cooker etc., also have the associated electrical equipment on automobile, as the ignition installation of automobile etc., be also applied to each electric appliances of industrial use as dynamic Control load power source, controller, DC welder etc.But the chips welding of high-capacity transistor generally adopts the technique of manual welding, and manual welding chip inefficiency, electric energy expends greatly simultaneously, and hydrogen nitrogen protective gas waste is corresponding also many, increases operation cost, and quality conformance is poor, and efficiency is low.
Meanwhile, well-known, weld layer, except mechanical connection being provided for device or being electrically connected to, also must provide good heat dissipation channel for device.By manual welding, cannot realize above-mentioned requirements.
Summary of the invention
Technical problem to be solved by this invention is to provide the transistorized production method that a kind of efficiency is high, quality good, cost is low, has improved the technique of chips welding.By the welding procedure of this method, have that mechanical strength is high, thermal resistance is little, a good stability, high reliability.
The present invention solves the problems of the technologies described above adopted technical scheme and specifically comprises the following steps:
First, transistorized chip to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to chip to be welded, heating-up temperature is 85 ℃, in this region, keep 80 seconds left and right after the time, transistorized chip to be welded enters cutter the second heating-up temperature region, in the second heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 105 ℃, in this region, keep the time of about 60 seconds.
Heating by two stages can effectively reduce the weld defect producing in chips welding process.Why adopt two different heating period main causes to be, the mode of the thermal current heating by the first stage can heat in upper and lower surface simultaneously, and by the mode of thermal current, can effectively blow the pollutant at position to be welded off, be beneficial to the carrying out of welding; And in second stage the mode by eddy-current heating heating chip is whole uniformly, reduce the defect that welding stress brings.In addition, the gradient-heated mode that adopts the first heating-up temperature and the second heating-up temperature segmentation to improve heating-up temperature can reduce the stress defect that Fast Heating is brought.
Then, lead frame is placed in feeding transport platform, the manipulator of being controlled by computer picks up material to workbench automatically by suction dish, and the grapple parts of carrying by carrying are transported in the track that nitrogen gas protects, and protective gas is protected in whole conveying track; First lead frame is transported by the 3rd temperature province and the 4th temperature province successively at track, wherein San heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to lead frame to be welded, heating-up temperature is 105 ℃, in this region, keep 60 seconds left and right after the time, transistorized chip to be welded enters cutter the 4th heating-up temperature region, in the 4th heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 145 ℃, in this region, keeps the time of about 80 seconds.
In the transistorized welding of prior art, most of technique improves welding quality for heating before chip being welded before welding, heating before seldom lead frame being welded, does not recognize by heating before the weldering of lead frame and can better eliminate the weld defect producing in welding process.In the present invention, by the control of heating-up temperature and the control of retention time of two sections of gradient types, both can play the effect of weld preheating, can avoid again the shock heating stress defect of bringing to lead frame.
It should be noted that, before transistorized chip to be welded and the weldering of lead frame, the control of heating-up temperature of two sections of gradient types of heating and the parameter value of the control of retention time are all to reach the optimal value of the parameter of eliminating the front defect of weldering, higher or lower than corresponding heating-up temperature or retention time, all can not reach preferably the object of eliminating weld defect, also cannot guarantee that parts to be welded self do not produce thermal stress.
Again, lead frame through San heating-up temperature district and the heating of Si heating-up temperature district is transported to Wu operating temperature district by track, the operating temperature in Wu operating temperature district is 180 ℃, in this temperature province, be provided with video camera and reshaping device, whether the structure of observing lead frame by video camera is smooth, if while having the phenomenons such as distortion or warpage to occur, control reshaping device and slowly lead frame is carried out to micro-shaping, until the mechanism that video camera is observed meets the requirements, if lead frame also cannot reach requirement after shaping, enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in Wu operating temperature district.
By this step, before weldering, just parts to be welded are checked, reduced the generation of substandard product, reduced energy consumption, and can the speed production cycle.
Then, the qualified lead frame through heating and shaping is transported to Liu operating temperature district, and the ambient temperature in Liu operating temperature district is 180 ℃.In this temperature province, first by the first tack coat, apply lead frame position to be welded, and on the basis of above-mentioned tack coat, applying can welding coating, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism Ti-W composition to be coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process applying at scolding tin material, utilize tin material conveyer structure to control the shape of each position to be welded part scolding tin material coating, preferably, be shaped as circle, rectangle or square, the thickness of above-mentioned tack coat is about 0.01mm, and thickness that can welding coating is in 8um left and right.
Then, the lead frame after above-mentioned steps is transported to Qi operating temperature district, and the ambient temperature in Qi operating temperature district is 200 ℃.In this temperature province, chip is passed the top that welding grasping mechanism moves to lead frame, and monitor by the video camera being arranged in this region, place it in exactly the corresponding welding position of lead frame, after this temperature province preheated one-section time, by controlling organization, control and utilize welding gun to weld, and use alcohol rosin to help weldering, also can use the solder(ing) paste of reflow welding, adjust after rare and smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that after chip puts up and smear again, otherwise the solder(ing) paste heating being pressed under chip is not incessantly melted and is easily caused short circuit.The method of welding is hot gas welding, heat gun is apart from chip 2-3 centimetre of heating (attention homogeneous heating), and after melts soldering tin, air pressure gun is brought up to 3-4 centimetre of continuation heating, ajusts chip simultaneously, then remove air pressure gun, after also needing as required chip to be set right after removing air pressure gun, compress.Compression can prevent rosin joint, but easily causes short circuit between pin, and certainly rosin joint also can solve by warding off from the side tin, but to be compacted into power high again not as hot blast blows.
Finally, the parts integral body after welding enters in the 8th humidity province, and the temperature of this humidity province is 150 ℃ of left and right, keeps temperature about 180 seconds.Again whole framework Self-tipping is arrived in corresponding parts storing apparatus.
The product of preparing by welding method of the present invention, has eliminated the weld defect producing in welding preferably, has reduced the generation of rosin joint simultaneously, is the transistorized production method that a kind of efficiency is high, quality good, cost is low.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below specific embodiments of the invention are described in detail.
Concrete steps of the present invention are as follows:
The first step, transistorized chip to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to chip to be welded, heating-up temperature is 85 ℃, in this region, keep 80 seconds left and right after the time, transistorized chip to be welded enters cutter the second heating-up temperature region, in the second heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 105 ℃-110 ℃, in this region, keep the time of about 60 seconds,
Second step, lead frame is placed in feeding transport platform, the manipulator of being controlled by computer picks up material to workbench automatically by suction dish, and the grapple parts of carrying by carrying are transported in the track that nitrogen gas protects, and protective gas is protected in whole conveying track; First lead frame is transported by the 3rd temperature province and the 4th temperature province successively at track, wherein San heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to lead frame to be welded, heating-up temperature is 105 ℃, in this region, keep 60 seconds left and right after the time, transistorized chip to be welded enters cutter the 4th heating-up temperature region, in the 4th heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 145 ℃, in this region, keeps the time of about 80 seconds;
The 3rd step, lead frame through San heating-up temperature district and the heating of Si heating-up temperature district is transported to Wu operating temperature district by track, the operating temperature in Wu operating temperature district is 180 ℃, in this temperature province, be provided with video camera and reshaping device, whether the structure of observing lead frame by video camera is smooth, if while having the phenomenons such as distortion or warpage to occur, control reshaping device and slowly lead frame is carried out to micro-shaping, until the mechanism that video camera is observed meets the requirements, if lead frame also cannot reach requirement after shaping, enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in Wu operating temperature district,
The 4th step, the qualified lead frame through heating and shaping is transported to Liu operating temperature district, and the ambient temperature in Liu operating temperature district is 180 ℃.In this temperature province, first by the first tack coat, apply lead frame position to be welded, and on the basis of above-mentioned tack coat, applying can welding coating, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism Ti-W composition to be coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process applying at scolding tin material, utilize tin material conveyer structure to control the shape of each position to be welded part scolding tin material coating, preferably, be shaped as circle, rectangle or square, the thickness of above-mentioned tack coat is about 0.01mm, and thickness that can welding coating is in 8um left and right,
The 5th step, the lead frame after above-mentioned steps is transported to Qi operating temperature district, and the ambient temperature in Qi operating temperature district is 200 ℃.In this temperature province, chip is passed the top that welding grasping mechanism moves to lead frame, and monitor by the video camera being arranged in this region, place it in exactly the corresponding welding position of lead frame, after this temperature province preheated one-section time, by controlling organization, control and utilize welding gun to weld, and use alcohol rosin to help weldering, also can use the solder(ing) paste of reflow welding, adjust after rare and smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that after chip puts up and smear again, otherwise the solder(ing) paste heating being pressed under chip is not incessantly melted and is easily caused short circuit.The method of welding is hot gas welding, heat gun is apart from chip 2-3 centimetre of heating (attention homogeneous heating), after melts soldering tin, air pressure gun is brought up to 3-4 centimetre of continuation heating, ajust chip simultaneously, then remove air pressure gun, after also needing as required chip to be set right after removing air pressure gun, compress, compression can prevent rosin joint;
The 6th step, the parts integral body after welding enters in the 8th humidity province, and the temperature of this humidity province is 150 ℃ of left and right, keeps temperature 180-200 second, more whole framework Self-tipping is arrived in corresponding parts storing apparatus.
Wherein in the above-mentioned first step, the temperature of eddy-current heating can be 108 ℃, and the 6th step keeps the time of temperature to change as required, as is 190 seconds.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (3)
1. adopt hot air welding method to prepare a transistorized production method, it is characterized in that comprising the following steps:
The first step, transistorized chip to be welded is put on jig, welding robot starts heating steps, heating steps comprises the first heating-up temperature district and the second heating-up temperature district, wherein the first heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to chip to be welded, heating-up temperature is 85 ℃, in this region, keep 80 seconds left and right after the time, transistorized chip to be welded enters cutter the second heating-up temperature region, in the second heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 105 ℃-110 ℃, in this region, keep the time of about 60 seconds,
Second step, lead frame is placed in feeding transport platform, the manipulator of being controlled by computer picks up material to workbench automatically by suction dish, and the grapple parts of carrying by carrying are transported in the track that nitrogen gas protects, and protective gas is protected in whole conveying track, first lead frame is transported by the 3rd temperature province and the 4th temperature province successively at track, wherein San heating-up temperature district adopts thermal current heating, from upper and lower both direction, blow to lead frame to be welded, heating-up temperature is 105 ℃, in this region, keep 60 seconds left and right after the time, transistorized chip to be welded enters cutter the 4th heating-up temperature region, in the 4th heating-up temperature region, adopt induction heating mode, the heating-up temperature in eddy-current heating stage is 145 ℃, in this region, keeps the time of about 80 seconds, the 3rd step, lead frame through San heating-up temperature district and the heating of Si heating-up temperature district is transported to Wu operating temperature district by track, the operating temperature in Wu operating temperature district is 180 ℃, in this temperature province, be provided with video camera and reshaping device, whether the structure of observing lead frame by video camera is smooth, if while having the phenomenons such as distortion or warpage to occur, control reshaping device and slowly lead frame is carried out to micro-shaping, until the mechanism that video camera is observed meets the requirements, if lead frame also cannot reach requirement after shaping, enter and scrap step, this lead frame is transferred out outside track, start new lead frame supplying step simultaneously, and repeat above-mentioned steps, until observe satisfactory lead frame in Wu operating temperature district,
The 4th step, the qualified lead frame through heating and shaping is transported to Liu operating temperature district, and the ambient temperature in Liu operating temperature district is 180 ℃;
In this temperature province, first by the first tack coat, apply lead frame position to be welded, and on the basis of above-mentioned tack coat, applying can welding coating, described tack coat is Ti-W composition, described can welding coating be tin solder, first utilize tack coat feed mechanism Ti-W composition to be coated to the welding position of lead frame, then on above-mentioned Ti-W composition, utilize tin material conveyer structure to apply scolding tin material coating, in the process applying at scolding tin material, utilize tin material conveyer structure to control the shape of each position to be welded part scolding tin material coating, preferably, be shaped as circle, rectangle or square,
The thickness of above-mentioned tack coat is about 0.01mm, and thickness that can welding coating is in 8um left and right;
The 5th step, the lead frame after above-mentioned steps is transported to Qi operating temperature district, and the ambient temperature in Qi operating temperature district is 200 ℃;
In this temperature province, chip is passed the top that welding grasping mechanism moves to lead frame, and monitor by the video camera being arranged in this region, place it in exactly the corresponding welding position of lead frame, after this temperature province preheated one-section time, by controlling organization, control and utilize welding gun to weld, and use alcohol rosin to help weldering, also can use the solder(ing) paste of reflow welding, adjust after rare and smear, smearing quantity does not smear too much, otherwise easily short circuit, it should be noted that after chip puts up and smear again, otherwise the solder(ing) paste heating being pressed under chip is not incessantly melted and is easily caused short circuit,
The method of welding is hot gas welding, heat gun is apart from chip 2-3 centimetre of heating (attention homogeneous heating), after melts soldering tin, air pressure gun is brought up to 3-4 centimetre of continuation heating, ajust chip simultaneously, then remove air pressure gun, after also needing as required chip to be set right after removing air pressure gun, compress, compression can prevent rosin joint;
The 6th step, the parts integral body after welding enters in the 8th humidity province, and the temperature of this humidity province is 150 ℃ of left and right, keeps temperature 180-200 second, more whole framework Self-tipping is arrived in corresponding parts storing apparatus.
2. a kind of employing hot air welding method according to claim 1 is prepared transistorized production method, it is characterized in that the temperature of eddy-current heating in the first step can be 108 ℃.
3. a kind of employing hot air welding method according to claim 1 is prepared transistorized production method, it is characterized in that the 6th step keeps the time of temperature to change as required, as is 190 seconds.
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| CN201410311524.2A CN104084659B (en) | 2014-07-02 | 2014-07-02 | Hot air welding method is adopted to prepare the production method of transistor |
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| CN201410311524.2A CN104084659B (en) | 2014-07-02 | 2014-07-02 | Hot air welding method is adopted to prepare the production method of transistor |
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Cited By (4)
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| CN104942396A (en) * | 2015-07-15 | 2015-09-30 | 湖北泰晶电子科技股份有限公司 | High-precision temperature-control welding furnace for tuning fork crystals |
| CN105428252A (en) * | 2015-12-22 | 2016-03-23 | 常州银河世纪微电子有限公司 | Power type high-current device mounting process |
| CN106229306A (en) * | 2016-07-18 | 2016-12-14 | 浙江钱江摩托股份有限公司 | Core method in the stabilisation of a kind of power device chip |
| CN106684004A (en) * | 2016-07-18 | 2017-05-17 | 浙江益中智能电气有限公司 | Integrated packaging method for power device |
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| CN104084659B (en) | 2016-04-20 |
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