CN104080944A - 用于ald/cvd含硅薄膜应用的有机硅烷前体 - Google Patents
用于ald/cvd含硅薄膜应用的有机硅烷前体 Download PDFInfo
- Publication number
- CN104080944A CN104080944A CN201380007437.1A CN201380007437A CN104080944A CN 104080944 A CN104080944 A CN 104080944A CN 201380007437 A CN201380007437 A CN 201380007437A CN 104080944 A CN104080944 A CN 104080944A
- Authority
- CN
- China
- Prior art keywords
- sih
- precursor
- film
- alkyl
- reactant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 111
- 150000001282 organosilanes Chemical class 0.000 title claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title abstract description 33
- 239000010703 silicon Substances 0.000 title abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 46
- 239000000376 reactant Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 36
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- -1 heterocyclic radical Chemical class 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000000460 chlorine Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- 125000000623 heterocyclic group Chemical group 0.000 claims description 13
- 229910052801 chlorine Inorganic materials 0.000 claims description 12
- 238000005137 deposition process Methods 0.000 claims description 12
- 229910052736 halogen Inorganic materials 0.000 claims description 12
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 229910052740 iodine Inorganic materials 0.000 claims description 10
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 9
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 150000003254 radicals Chemical class 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 125000003545 alkoxy group Chemical group 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000005046 Chlorosilane Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 150000001343 alkyl silanes Chemical class 0.000 claims description 3
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 claims description 3
- LGRLWUINFJPLSH-UHFFFAOYSA-N methanide Chemical compound [CH3-] LGRLWUINFJPLSH-UHFFFAOYSA-N 0.000 claims description 3
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 claims description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 claims description 3
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 3
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 3
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- FTZIQBGFCYJWKA-UHFFFAOYSA-N 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium Chemical compound S1C(C)=C(C)N=C1[N+]1=NC(C=2C=CC=CC=2)=NN1C1=CC=CC=C1 FTZIQBGFCYJWKA-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000011819 refractory material Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 1
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000005019 vapor deposition process Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 32
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 24
- 239000004215 Carbon black (E152) Substances 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 21
- 239000003446 ligand Substances 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229930195733 hydrocarbon Natural products 0.000 description 20
- 150000002430 hydrocarbons Chemical class 0.000 description 20
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 15
- 229910000077 silane Inorganic materials 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 9
- 239000000725 suspension Substances 0.000 description 9
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 8
- 125000000217 alkyl group Chemical group 0.000 description 8
- 150000001409 amidines Chemical class 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 8
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 7
- 238000004821 distillation Methods 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 229910052758 niobium Inorganic materials 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 description 6
- 239000012280 lithium aluminium hydride Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000010189 synthetic method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 150000001721 carbon Chemical group 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052712 strontium Inorganic materials 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- KYARBIJYVGJZLB-UHFFFAOYSA-N 7-amino-4-hydroxy-2-naphthalenesulfonic acid Chemical compound OC1=CC(S(O)(=O)=O)=CC2=CC(N)=CC=C21 KYARBIJYVGJZLB-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 241001168730 Simo Species 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 150000001718 carbodiimides Chemical class 0.000 description 3
- 150000001735 carboxylic acids Chemical class 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 125000004663 dialkyl amino group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052987 metal hydride Inorganic materials 0.000 description 3
- 150000004681 metal hydrides Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical group C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 0 CC(N(C)*)N(C)* Chemical compound CC(N(C)*)N(C)* 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 235000011054 acetic acid Nutrition 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 2
- 235000011089 carbon dioxide Nutrition 0.000 description 2
- XCJXQCUJXDUNDN-UHFFFAOYSA-N chlordene Chemical group C12C=CCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl XCJXQCUJXDUNDN-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- IHLVCKWPAMTVTG-UHFFFAOYSA-N lithium;carbanide Chemical compound [Li+].[CH3-] IHLVCKWPAMTVTG-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- VYFXMIAQVGXIIN-UHFFFAOYSA-N trichloro(chlorosilyl)silane Chemical compound Cl[SiH2][Si](Cl)(Cl)Cl VYFXMIAQVGXIIN-UHFFFAOYSA-N 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical group Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- IPSRAFUHLHIWAR-UHFFFAOYSA-N zinc;ethane Chemical group [Zn+2].[CH2-]C.[CH2-]C IPSRAFUHLHIWAR-UHFFFAOYSA-N 0.000 description 2
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- DMSPFACBWOXIBX-UHFFFAOYSA-N 1-phenyl-N-silylmethanamine Chemical compound [SiH3]NCC1=CC=CC=C1 DMSPFACBWOXIBX-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005909 Kieselgur Substances 0.000 description 1
- 229910015868 MSiO Inorganic materials 0.000 description 1
- SKYWAOSWRWWISV-UHFFFAOYSA-N N-propan-2-yl-N-(2-silylethyl)propan-2-amine Chemical compound C(C)(C)N(C(C)C)CC[SiH3] SKYWAOSWRWWISV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LPMDNOPQLGRDMA-UHFFFAOYSA-N n'-butylmethanediimine Chemical group CCCCN=C=N LPMDNOPQLGRDMA-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-UHFFFAOYSA-N n-butan-2-ylidenehydroxylamine Chemical compound CCC(C)=NO WHIVNJATOVLWBW-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005373 pervaporation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- AOLNRWHYQMWWCQ-UHFFFAOYSA-N potassium azanide trimethyl(trimethylsilyl)silane Chemical compound N[K].C[Si]([Si](C)(C)C)(C)C AOLNRWHYQMWWCQ-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000000541 pulsatile effect Effects 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明公开了含Si薄膜形成前体、其合成方法及使用其以使用气相沉积法沉积含硅薄膜用于制造半导体、光伏装置、LCD-TFT、平板型装置、耐火材料或航空材料的方法。
Description
相关申请的交互引用
本申请主张2012年7月20日申请的美国临时申请第61/674,103号的优先权,该申请的全部内容引入本文供参考。
技术领域
公开含Si薄膜形成前体、其合成方法及使用其以使用气相沉积法沉积含硅薄膜用于制造半导体、光伏装置、LCD-TFT、平板型装置、耐火材料或航空材料的方法。
现有技术
含Si薄膜广泛用于半导体、光伏装置、LCD-TFT、平板型装置、耐火材料或航空行业中。含Si薄膜可例如用作具有电学性质的可绝缘的介电材料(SiO2、SiN、SiCN、SiCOH、MSiOx,其中M为Hf、Zr、Ti、Nb、Ta或Ge且x大于零),含Si薄膜可用作导电薄膜,如金属硅化物或金属硅氮化物。由于电学装置架构朝向纳米级(尤其低于28nm节点)降低尺寸所施加的严格要求,需要愈来愈精细调节的分子前体,这些分子前体除具有高沉积速率、所产生薄膜的保形性及坚实度以外也满足挥发性(对于ALD制程)、较低制程温度、与各种氧化剂的反应性及低薄膜污染的要求。
熟知硅烷(SiH4)可用于热CVD。然而,此分子具自燃性,由此使得此室温气体在安全处理方面面临挑战。已使用采用卤代硅烷(如二氯硅烷SiH2Cl2)的CVD方法。然而,这些方法可能需要较长吹扫时间,造成薄膜的卤素污染及粒子形成(由氯化铵盐形成),且甚至破坏某些基质,从而引起不希望的界面层形成。以烷基部分地替代卤素可得到一些改进,但代价是薄膜内产生不利的碳污染。
有机氨基硅烷已用作含Si薄膜的CVD的前体。Dussarrat等人的US7192626报导了使用三硅烷胺N(SiH3)3来沉积SiN薄膜。其他已报导的前体包括二异丙氨基硅烷[SiH3(NiPr2)]及类似SiH3(NR2)化合物(参见例如Thridandam等人的US 7875312)以及苯基甲基氨基硅烷[SiH3(NPhMe)]及相关经取代的硅烷苯胺(参见例如Xiao等人的EP 2392691)。
另一相关类别的用于含Si薄膜的CVD的Si前体由通式(R1R2N)xSiH4-x给出,其中x在1与4之间且R取代基独立地为H、C1-C6直链、分支链或环状碳链(参见例如Dussarrat等人的WO2006/097525)。
Hunks等人在US2010/0164057中公开诸多含Si前体,包括具有式R4-xSiLx的硅化合物,其中x为具有1-3的值的整数;R可选自H、分支链和未分支链C1-C6烷基、C3-C8环烷基和C6-C13芳基;且L可选自异氰酸酯基、甲基乙基酮肟、三氟乙酸酯、三氟甲磺酸酯、酰氧基、β-二酮亚胺(β-diketiminate)、β-二-亚胺(β-di-iminate)、脒、胍、烷氨基、氢化物、烷氧化物或甲酸酯配位体。Pinnavaia等人主张了一种由乙酰基丙酮酸硅和1,3-二酮硅(silicon 1,3-diketonate)前体制备多孔合成半结晶有机-无机杂合氧化硅组成物的方法(US6465387)。
尽管有诸多选择可用于含Si薄膜的沉积,但仍不断寻找其他前体以为装置工程师提供调节制造制程要求及达成具有所要电学和物理性质的薄膜的能力。
记法和命名法
贯穿以下说明书及申请专利范围使用某些缩写、符号和术语,且包括:
如本文所用,不定冠词“一(a/an)”意谓一个(种)或多个(种)。
如本文所用,术语“独立地”在用于描述R基团的情形中时应理解为表示所述R基团不仅相对于带有相同或不同下标或上标的其他R基团独立地选择,还相对于同一R基团的任何其他种类独立地选择。举例而言,在式MR1 x(NR2R3)(4-x)(其中x为2或3)中,两个或三个R1基团可但无需彼此或与R2或R3相同。另外,应了解,除非另外特定陈述,否则当用于不同式子中时R基团的值彼此独立。
如本文所用,术语“烷基”指排他性地含有碳和氢原子的饱和官能基。另外,术语“烷基”指直链、分支链或环状烷基。直链烷基的实例包括但不限于甲基、乙基、丙基、丁基等。分支链烷基的实例包括但不限于叔丁基。环状烷基的实例包括但不限于环丙基、环戊基、环己基等。
如本文所用,术语“芳基”指已自环中移除一个氢原子的芳环化合物。如本文所用,术语“杂环”指环状化合物,其具有至少两种不同元素的原子作为其环的成员。
如本文所用,缩写“Me”指甲基;缩写“Et”指乙基;缩写“Pr”指任何丙基(即正丙基或异丙基);缩写“iPr”指异丙基;缩写“Bu”指任何丁基(正丁基、异丁基、叔丁基、仲丁基);缩写“tBu”指叔丁基;缩写“sBu”指仲丁基;缩写“iBu”指异丁基;缩写“Ph”指苯基;缩写“Am”指任何戊基(异戊基、仲戊基、叔戊基);缩写“Cy”指环状烷基(环丁基、环戊基、环己基等);且缩写“R-amd”指R-N-C(Me)-N-R脒配位体,其中R为烷基(例如iPr-amd为iPr-N-C(Me)-N-iPr)。
如本文所用,首字母缩写词“SRO”表示氧化锶钌薄膜;首字母缩写词“HCDS”表示六氯二硅烷;且首字母缩写词“PCDS”表示五氯二硅烷。
本文使用元素周期表的元素的标准缩写。应了解,可用这些缩写来指代元素(例如Si指硅,N指氮,O指氧,C指碳等)。
附图简述
为了进一步理解本发明的性质和目的,应结合附图参考以下详细说明,其中相似组件由相同或类似参考编号指定且其中:
图1为热解重量分析(TGA)图,其显示SiH3(NiPr-amd)和SiH3(NtBu-amd)与DiPAS(二异丙基氨基硅烷)相比在温度变化下的重量损失百分比;且
图2为显示前体引入时间对比沉积速率和折射率的图。
发明内容
公开具有下式的有机硅烷分子:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环基且R3可为H、C1-C6烷基或C3-C20芳基或杂环基、氨基、烷氧基或卤素;
·R1与R2和/或R2与R3连接以形成环状链;
·有机硅烷分子具有下式:
其中R1和R2可各自独立地为C1-C6烷基;
·有机硅烷分子为H3Si(NiPr-amd);
·有机硅烷分子具有下式:
其中R1、R2、R3和R4可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;
·有机硅烷分子为H3Si(-(iPr)N-C(NMe2)-N(iPr)-);
·有机硅烷分子具有下式:
其中R1、R2和R3可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;
·有机硅烷分子为H3Si(-(iPr)N-C(OMe)-N(iPr)-);
·有机硅烷分子具有下式:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;且X可为Cl、Br、I或F;且
·有机硅烷分子为H3Si(-(iPr)N-C(Cl)-N(iPr)-)。
还公开具有下式的含Si薄膜形成前体:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环基且R3可为H、C1-C6烷基、C3-C20芳基或杂环基、氨基、烷氧基或卤素;
·R1与R2和/或R2与R3连接以形成环状链;
·含Si薄膜形成前体具有下式:
其中R1和R2可各自独立地为C1-C6烷基;
·含Si薄膜形成前体为H3Si(NiPr-amd);
·含Si薄膜形成前体具有下式:
其中R1、R2、R3和R4可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;
·含Si薄膜形成前体为H3Si(-(iPr)N-C(NMe2)-N(iPr)-);
·含Si薄膜形成前体具有下式:
其中R1、R2和R3可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;且
·含Si薄膜形成前体为H3Si(-(iPr)N-C(OMe)-N(iPr)-);
·含Si薄膜形成前体具有下式:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环;且X可为Cl、Br、I或F;且
·含Si薄膜形成前体为H3Si(-(iPr)N-C(Cl)-N(iPr)-)。
还公开在基底上沉积含Si层的方法。
以上公开的至少一种有机硅烷前体引入其中安置有至少一个基底的反应器中。使用气相沉积法将至少一部分有机硅烷前体沉积至至少一个基底上以形成含Si层。所公开的方法可具有以下方面中的一种或多种:
·向反应器中引入包含至少一种第二前体的蒸气;
·至少一种第二前体的元素选自:第2族、第13族、第14族、过渡金属、镧系元素及其组合;
·至少一种第二前体的元素选自Mg、Ca、Sr、Ba、Zr、Hf、Ti、Nb、Ta、Al、Si、Ge、Y或镧系元素;
·向反应器中引入至少一种共反应物;
·共反应物选自:O2、O3、H2O、H2O2、NO、NO2、羧酸、其自由基及其组合;
·共反应物为经等离子处理的氧气;
·共反应物为臭氧;
·含Si层为氧化硅层;
·共反应物选自:H2、NH3、(SiH3)3N、氢化硅烷(如SiH4、Si2H6、Si3H8、Si4H10、Si5H10、Si6H12)、氯硅烷和氯聚硅烷(如SiHCl3、SiH2Cl2、SiH3Cl、Si2Cl6、Si2HCl5、Si3Cl8)、烷基硅烷(如Me2SiH2、Et2SiH2、MeSiH3、EtSiH3)、肼(如N2H4、MeHNNH2、MeHNNHMe)、有机胺(如NMeH2、NEtH2、NMe2H、NEt2H、NMe3、NEt3、(SiMe3)2NH)、吡唑啉、吡啶、含B分子(如B2H6、9-硼双环[3,3,1]壬烷、三甲基硼、三乙基硼、硼吖嗪(borazine))、烷基金属(如三甲基铝、三乙基铝、二甲基锌、二乙基锌)、其自由基物质及其混合物。
·共反应物选自:H2、NH3、SiH4、Si2H6、Si3H8、SiH2Me2、SiH2Et2、N(SiH3)3、其氢自由基及其混合物;
·共反应物经等离子处理;
·共反应物经远程等离子处理;
·共反应物不经等离子处理;
·共反应物为H2;
·共反应物为NH3;
·共反应物为HCDS;
·共反应物为PCDS;
·共反应物为四氯硅烷;
·共反应物为三氯硅烷;
·共反应物为六氯环六硅烷;
·气相沉积法为化学气相沉积法;
·气相沉积法为原子层沉积(ALD)法;
·气相沉积法为空间ALD法;
·含硅层为Si;
·含硅层为SiO2;
·含硅层为SiN;
·含硅层为SiON;
·含硅层为SiCN;且
·含硅层为SiCOH。
实施方式
公开了含Si薄膜形成前体、其合成方法及使用其以使用气相沉积法沉积含硅薄膜用于制造半导体、光伏装置、LCD-TFT、平板型装置、耐火材料或航空材料的方法。
所公开的有机硅烷前体具有下式:
脒
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环基且R3可为H、C1-C6烷基、C3-C20芳基或杂环基、氨基、烷氧基或卤素。R1及R2和/或R2及R3可连接以形成环状链。
如该式中所说明,氮原子键结于硅原子,从而产生五配位Si(IV)中心。二齿单阴离子配位体的主链中的碳原子为sp2杂化,从而在配位体上产生非定域电荷。氮和碳原子可各自独立地经H、C1-C6烷基、芳基或杂环基取代。
所公开的有机硅烷前体由于硅原子处的超配位而可能比其他R4-xSiLx前体更具反应性。换言之,尽管硅原子为+IV,但三个氢键和单阴离子螯合配位体与硅原子形成总共5个键。
本领域技术人员应认识到使用氢或任何R基团中具有较少碳原子的烷基、芳基或杂环基(即H、C1或C2)与具有含较多碳(即C4+)的烷基、芳基或杂环基的分子相比将产生具有较高挥发性的分子。由于其在-N-C-N-配位体上的两个氮原子的氮含量增加,这些分子可用于产生还含有氮的含硅薄膜,如SiN、SiCN、SiON、MSiN或MSiON,其中M为如Hf、Zr、Ti、Nb、Ta或Ge的元素,或用于调节彼等薄膜中的氮的量。
当R3为Me时,所得前体为具有下式的含有脒的化合物:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环基。优选地,R1和R2各独立地为C1-C6烷基。
脒前体可如下合成:通过将SiXH3(其中X为Cl、Br、I或三氟甲磺酸根(SO3CF3 -))的烃溶液与纯配位体化合物(如Li[R1NC(R2)NR3]或Li(amd))或其烃溶液在氮气氛围下组合,混合***出口与油起泡器连接以抑制空气及水分回流。
获得所公开的脒前体的第二合成途径为通过在惰性氛围下使质子化配位体(R1N=C(R2)-NRH3)与纯二烷基氨基硅烷[SiH3(NR2)]或其烃溶液反应。
或者,所公开的脒前体可如下合成:通过SiHnCl4-n与单一当量的配位体化合物(即Li[R1NC(R2)NR3]或Li(amd))反应,随后使用所选金属氢化物(如LAH(氢化锂铝))还原。
在所有三个合成途径中,可在室温下搅拌所得溶液过夜。适合于这些合成方法的例示性烃溶液包括***、戊烷、己烷或甲苯。过滤所得悬浮液且蒸馏所得溶液以移除溶剂。分别通过蒸馏或升华来纯化所得液体或固体。除了配位体化合物Li(amd),所有起始材料均可在市面上购得。配位体化合物可通过将有机金属盐(即烷基锂)的烃溶液与适当碳化二亚胺(即R1N=C=NR3)的烃溶液组合来合成。其他合成细节提供于实施例中。
例示性脒前体包括:
优选地,脒前体为SiH3(NiPr-amd)。
当R3为氨基(即NR3R4)时,所得前体为具有下式的含有胍的化合物:
胍
其中R1、R2、R3和R4可各自独立地为H、C1-C6烷基、C3-C20芳基或杂环。由于其与其他分子相比时氮含量增加,这些分子可用于产生还含有氮的含硅薄膜(如SiN或SiON),或用于调节含有SiN或SiON的薄膜中的氮的量。
胍前体可如下合成:通过将SiXH3(其中X为Cl、Br、I或三氟甲磺酸根(SO3CF3 -))的烃溶液与纯配位体化合物(如Li[R1NC(NR3R4)NR2](或Li(gnd)))或其烃溶液在氮气氛围下组合,混合***出口与油起泡器连接以抑制空气及水分回流。
获得所公开的胍前体的第二合成途径为通过在惰性氛围下使质子化配位体(R1N=C(NR3R4)-NR2H)与纯二烷基氨基硅烷[SiH3(NR2)]或其烃溶液反应。
或者,所公开的胍前体可如下合成:通过SiHnCl4-n与单一当量的配位体化合物(即Li[R1NC(NR3R4)NR2]或Li(gnd))反应,随后使用所选金属氢化物(如LAH(氢化锂铝))还原。
在所有三个合成途径中,可在室温下搅拌所得溶液过夜。适合于这些合成方法的例示性烃溶液包括***、戊烷、己烷或甲苯。过滤所得悬浮液且蒸馏所得溶液以移除溶剂。分别通过蒸馏或升华来纯化所得液体或固体。除了配位体化合物Li(gnd),所有起始材料均可在市面上购得。配位体化合物可通过将有机金属盐(即氨基锂-Li(NR3R4))的烃溶液与适当碳化二亚胺(即R1N=C=NR2)的烃溶液组合来合成。
例示性胍前体包括:
优选地,胍前体为H3Si(-(iPr)N-C(NMe2)-N(iPr)-)。
当R3为烷氧基(即OR3)时,所得前体为具有下式的含有异脲的化合物:
异脲
其中R1、R2和R3可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环。
由于其与其他分子相比时氧含量增加,这些分子可用于产生还含有氧的含硅薄膜(如SiO2或SiON),或用于调节含有SiO2或SiON的薄膜中的氧的量。
异脲前体可如下合成:通过将SiXH3(其中X为Cl、Br、I或三氟甲磺酸根(SO3CF3-))的烃溶液与纯配位体化合物(如Li[R1NC(OR3)NR2](或Li(iso)))或其烃溶液在氮气氛围下组合,混合***出口与油起泡器连接以抑制空气和水分回流。
获得所公开的异脲前体的第二合成途径为通过在惰性氛围下使质子化配位体(R1N=C(OR3)-NR2H)与纯二烷基氨基硅烷[SiH3(NR2)]或其烃溶液反应。
或者,所公开的异脲前体可如下合成:通过SiHnCl4-n与单一当量的配位体化合物(即Li[R1NC(OR3)NR2]或Li(iso))反应,随后使用所选金属氢化物(如LAH(氢化锂铝))还原。
在所有三个合成途径中,可在室温下搅拌所得溶液过夜。适合于这些合成方法的例示性烃溶液包括***、戊烷、己烷或甲苯。过滤所得悬浮液且蒸馏所得溶液以移除溶剂。分别通过蒸馏或升华来纯化所得液体或固体。除了配位体化合物Li(iso),所有起始材料均可在市面上购得。配位体化合物可通过将有机金属盐(即烷醇锂-Li(OR3))的烃溶液与适当碳化二亚胺(即R1N=C=NR2)的烃溶液组合来合成。
例示性异脲前体包括:
优选地,异脲前体为H3Si(-(iPr)N-C(OMe)-N(iPr)-)。
当R3为卤素(即X)时,所得前体为具有下式的含有α-卤基脒的化合物:
α-卤基脒
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环且X可为Cl、Br、I或F。卤素原子可改进非晶硅的原子层沉积的保形性。
α-卤基脒前体可如下合成:通过组合经双取代的脲衍生物R1HN-(C=O)-NHR2的烃溶液与O=CX2的烃溶液,如Neubauer等人所述(Chemische Berichte,1964,97(5),1232-1245)。添加一摩尔当量的适当碱(如六甲基二硅烷氨基钾)的烃溶液至反应混合物中,且过滤所得悬浮液以移除金属盐副产物。所得溶液可与SiRH3反应,其中R为苯基、甲苯基或其他适当芳基取代基。所得混合物可通过分馏纯化。适合于这些合成方法的例示性烃溶液包括***、戊烷、己烷或甲苯。所有起始材料均可在市面上购得。
例示性α-卤基脒前体包括:
优选地,α-卤基脒为H3Si(-(iPr)N-C(Cl)-N(iPr)-)。
还公开使用所公开的有机硅烷前体进行气相沉积法的方法。所公开的方法提供有机硅烷前体用于沉积含硅薄膜的用途。所公开的方法可适用于制造半导体、光伏装置、LCD-TFT或平板型装置。该方法包括:提供基底;提供包括所公开的有机硅烷前体中的至少一种的蒸气;及使蒸气与基底接触(且典型地将蒸气导引至基底)以在基底的至少一个表面上形成含硅层。
所公开的方法还可使用气相沉积法在基底上形成含双金属层且更特定言之沉积SiMOx薄膜,其中x为4且M为Ta、Hf、Nb、Mg、Al、Sr、Y、Ba、Ca、As、Sb、Bi、Sn、Pb、Co、镧系元素(如Er)或其组合。所公开的方法可适用于制造半导体、光伏装置、LCD-TFT或平板型装置。该方法包括:提供基底;提供包括所公开的有机硅烷前体中的至少一种的蒸气且使蒸气与基底接触(且典型地将蒸气导引至基底)以在基底的至少一个表面上形成含双金属的层。如O3、O2、H2O、NO、H2O2、乙酸、***、三聚甲醛、其氧自由基及其组合但优选O3或经等离子处理的O2的氧源也可与蒸气一起提供。
所公开的有机硅烷前体可用于使用本领域熟练技术人员已知的任何沉积方法沉积含硅薄膜。适合沉积方法的实例包括但不限于已知化学气相沉积(CVD)、低压化学气相沉积(LPCVD)、原子层沉积(ALD)、脉冲式化学气相沉积(P-CVD)、热ALD、热CVD、等离子增强式原子层沉积(PE-ALD)、等离子增强式化学气相沉积(PE-CVD)、空间ALD或其组合。优选地,沉积方法为ALD、空间ALD或PE-ALD。
将有机硅烷前体蒸气引入含有至少一个基底的反应室中。反应室内的温度和压力以及基底的温度保持在适合于将至少一部分有机硅烷前体气相沉积至基底上的条件下。换言之,在将汽化前体引入腔室中之后,腔室内的条件使得至少一部分汽化前体沉积至基底上以形成含硅薄膜。共反应物也可用于帮助形成含Si层。
反应室可为装置中进行沉积方法的任何封闭区域或腔室,如但不限于平行板型反应器、冷壁型反应器、热壁型反应器、单晶圆反应器、多晶圆反应器或其他此种类型的沉积体系。所有这些例示性反应室均能够充当ALD反应室。反应室可维持在约0.5毫托至约20托范围内的压力下。此外,反应室内的温度可在约20℃至约600℃范围内。本领域技术人员应认识到可仅经由实验来优化温度以达成所要结果。
可通过控制基底固持器的温度或控制反应器壁的温度来控制反应器温度。用于加热基底的装置为本领域中已知。将反应器壁加热至足以获得处于充足生长速率下且具有所要物理状态和组成的所要薄膜的温度。可将反应器壁加热至的非限制性例示性温度范围包括约20℃至约600℃。当使用等离子沉积法时,沉积温度可在约20℃至约550℃范围内。或者,当执行热制程时,沉积温度可在约300℃至约600℃范围内。
或者,可将基底加热至足以获得处于充足生长速率下且具有所要物理状态和组成的所要含硅薄膜的温度。可将基底加热至的非限制性例示性温度范围包括150℃至600℃。优选地,基底温度保持低于或等于500℃。
上面将沉积含硅薄膜的基底的类型将视预期的最终用途而不同。在一些具体实施方案中,基底可为由氢化碳(例如CHx,其中x大于零)制成的图案化光阻薄膜。在一些具体实施方案中,基底可选自在MIM、DRAM或FeRam技术中用作介电材料的氧化物(例如基于ZrO2的材料、基于HfO2的材料、基于TiO2的材料、基于稀土氧化物的材料、基于三元氧化物(ternary oxide)的材料等)或选自用作铜与低k层之间的氧障壁的基于氮化物的薄膜(例如TaN)。可使用其他基底来制造半导体、光伏装置、LCD-TFT或平板装置。此类基底的实例包括但不限于固体基底,如含有金属氮化物的基底(例如TaN、TiN、WN、TaCN、TiCN、TaSiN和TiSiN);绝缘体(例如SiO2、Si3N4、SiON、HfO2、Ta2O5、ZrO2、TiO2、Al2O3和钛酸钡锶);或包括这些材料的多种组合的其他基底。所使用的实际基底也可视所使用的特定前体具体实施方案而定。但在许多情况下,所使用的优选基底将选自氢化碳、TiN、SRO、Ru和Si型基底,如多晶硅或结晶硅基底。
所公开的有机硅烷前体可以纯形式或以与适合溶剂(如甲苯、乙苯、二甲苯、均三甲苯、癸烷、十二烷、辛烷、己烷、戊烷、叔胺、丙酮、四氢呋喃、乙醇、乙基甲基酮、1,4-二烷或其他溶剂)的掺混物形式供应。所公开的前体可以不同浓度存在于溶剂中。举例而言,所得浓度可在约0.05M至约2M范围内。
纯的或掺混的有机硅烷前体通过已知构件(如管道和/或流量计)以蒸气形式引入反应器中。可通过经由已知汽化步骤(如直接汽化、蒸馏、通过鼓泡或通过使用升华器(如Xu等人的PCT公开案WO2009/087609中所公开的升华器))使纯的或掺混的前体溶液汽化来产生呈蒸气形式的前体。纯的或掺混的前体可以液态装至汽化器中,在该汽化器中其经汽化随后将其引入反应器中。或者,可通过将载气通入含有前体的容器中或通过使载气鼓泡至前体中来使纯的或掺混的前体汽化。载气可包括但不限于Ar、He或N2及其混合物。用载气鼓泡也可移除存在于纯的或掺混的前体溶液中的任何溶解氧。接着,载气及前体以蒸气形式引入反应器中。
必要时,可将容器加热至允许有机硅烷前体呈其液相且具有充足蒸气压的温度。容器可维持在例如0-150℃范围内的温度下。本领域熟练技术人员认识到可以已知方式调节容器的温度以控制汽化的有机硅烷前体的量。
除所公开的前体以外,反应气体(即共反应物)也可引入反应器中。反应气体可为氧化剂,如以下中的一种:O2;O3;H2O;H2O2;含氧自由基,如O·或OH·;NO;NO2;羧酸,如甲酸、乙酸、丙酸;NO、NO2或羧酸的自由基物质;三聚甲醛;及其混合物。优选地,氧化剂选自:O2、O3、H2O、H2O2、其含氧自由基(如O·或OH·)及其混合物。优选地,当执行ALD制程时,共反应物为经等离子处理的氧气、臭氧或其组合。当使用氧化气体时,所得含硅薄膜也将含有氧。
或者,反应气体可为还原剂,如以下中的一种:H2、NH3、(SiH3)3N、氢化硅烷(如SiH4、Si2H6、Si3H8、Si4H10、Si5H10、Si6H12)、氯硅烷和氯聚硅烷(如SiHCl3、SiH2Cl2、SiH3Cl、Si2Cl6、Si2HCl5、Si3Cl8)、烷基硅烷(如(CH3)2SiH2、(C2H5)2SiH2、(CH3)SiH3、(C2H5)SiH3)、肼(如N2H4、MeHNNH2、MeHNNHMe)、有机胺(如N(CH3)H2、N(C2H5)H2、N(CH3)2H、N(C2H5)2H、N(CH3)3、N(C2H5)3、(SiMe3)2NH)、吡唑啉、吡啶、含B分子(如B2H6、9-硼双环[3,3,1]壬烷、三甲基硼、三乙基硼、硼吖嗪)、烷基金属(如三甲基铝、三乙基铝、二甲基锌、二乙基锌)、其自由基物质及其混合物。优选地,还原剂为H2、NH3、SiH4、Si2H6、Si3H8、SiH2Me2、SiH2Et2、N(SiH3)3、其氢自由基或其混合物。当使用还原剂时,所得含硅薄膜可为纯Si。
反应气体可经等离子处理,以便使反应气体分解成其自由基形式。当经等离子处理时N2也可用作还原剂。举例而言,可产生功率在约50W至约500W、优选约100W至约200W范围内的等离子。等离子可产生或存在于反应器自身内。或者,等离子可通常处于移离反应器的位置处,例如在远程定位的等离子体系中。本领域熟练技术人员将想到适合于该等离子处理的方法及装置。
所公开的有机硅烷前体也可与卤代硅烷或聚卤代硅烷(如六氯二硅烷、五氯二硅烷或四氯二硅烷)及一种或多种共反应物气体一起使用,以形成SiN或SiCN薄膜,如PCT公开案第WO2011/123792号中所公开,该公开案的全部内容引入本文供参考。
当所要含硅薄膜还含有另一元素(如但不限于Ta、Hf、Nb、Mg、Al、Sr、Y、Ba、Ca、As、Sb、Bi、Sn、Pb、Co、镧系元素(如Er)或其组合)时,共反应物可包括含金属前体,其选自但不限于金属烷基,如Ln(RCp)3或Co(RCp)2;金属胺,如Nb(Cp)(NtBu)(NMe2)3;及其任何组合。
有机硅烷前体及一种或多种共反应物可同时(化学气相沉积)、相继(原子层沉积)或以其他组合形式引入反应室中。举例而言,有机硅烷前体可在一次脉冲中引入且两种其他金属来源可在独立脉冲中一起引入[改进的原子层沉积]。或者,反应室在引入有机硅烷前体之前可能已含有共反应物。可使共反应物通过定位于反应室远程的等离子体系,且分解成自由基。或者,有机硅烷前体可连续引入反应室中,而其他金属来源通过脉冲引入(脉冲式化学气相沉积)。在各实施例中,可在脉冲之后进行吹扫或抽空步骤以移除所引入的过量组分。在各实施例中,脉冲可持续约0.01s至约10s,或者约0.3s至约3s,或者约0.5s至约2s范围内的时间。在另一替代方案中,有机硅烷前体及一种或多种共反应物可同时自淋浴喷头喷洒,在该淋浴喷头下固持若干晶圆的基座旋转(空间ALD)。
在一个非限制性例示性原子层沉积型制程中,有机硅烷前体的气相引入反应室中,在该反应室中其与适合基底接触。接着,可通过吹扫和/或抽空反应室来自反应室中移除过量有机硅烷前体。将氧源引入反应室中,在该反应室中其与所吸收的有机硅烷前体以自限制方式反应。通过吹扫和/或抽空反应室自反应室中移除任何过量氧源。若所要薄膜为氧化硅薄膜,则此两步制程可提供所要膜厚度或可重复直至已获得具有必需厚度的薄膜。
或者,若所要薄膜为硅金属氧化物薄膜(即SiMOx,其中x可为4且M为Ta、Hf、Nb、Mg、Al、Sr、Y、Ba、Ca、As、Sb、Bi、Sn、Pb、Co、镧系元素(如Er)或其组合),则可在以上两步制程之后将含金属前体的第二蒸气引入反应室中。含金属前体将基于所沉积的硅金属氧化物薄膜的性质来选择。在引入反应室中之后,含金属前体与基底接触。通过吹扫和/或抽空反应室自反应室中移除任何过量含金属前体。再次,可将氧源引入反应室中以与含金属前体反应。通过吹扫和/或抽空反应室自反应室中移除过量氧源。若已达成所要膜厚度,则制程可终止。然而,若需要较厚薄膜,则可重复整个四步骤制程。通过交替提供有机硅烷前体、含金属前体及氧源,可沉积具有所要组成及厚度的薄膜。
另外,通过改变脉冲次数,可获得具有所要化学计量M:Si比率的薄膜。举例而言,通过进行一次有机硅烷前体的脉冲及一次含金属前体的脉冲,且在各脉冲之后进行氧源的脉冲可获得SiMO2薄膜。然而,本领域技术人员应认识到为获得所要薄膜所需的脉冲次数可能不等于所得薄膜的化学计量比率。
在另一替代方案中,可经由ALD或改进的ALD制程使用所公开的化合物及具有式SiaH2a+2-bXb(其中X为F、Cl、Br或I;a=1至6;且b=1至(2a+2))的卤代硅烷化合物;或具有式-SicH2c-dXd-(其中X为F、Cl、Br、或I;c=3-8;且d=1至2c)的环状卤代硅烷化合物沉积Si或致密SiCN薄膜。优选地,卤代硅烷化合物为三氯硅烷、六氯二硅烷(HCDS)、五氯二硅烷(PCDS)、四氯二硅烷或六氯环六硅烷。本领域技术人员应认识到当必需为较低沉积温度时这些化合物中的Cl可经Br或I取代,此归因于Si-X键的较低键能(即Si-Cl=456kJ/mol;Si-Br=343kJ/mol;Si-I=339kJ/mol)。必要时,沉积可进一步使用含N反应物,如NH3。所公开的前体及卤代硅烷化合物的蒸气可视所要的最终薄膜浓度而相继或同时引入反应器。所选前体注入顺序将基于所要目的薄膜组成来确定。可重复前体引入步骤直至沉积层达成适合厚度。本领域技术人员应认识到当使用空间ALD装置时引导性脉冲(introductory pulse)可为同时的。如PCT公开案第WO2011/123792号中所描述,可改变前体引入顺序且可在存在或不存在NH3共反应物下执行沉积,以便调节SiCN薄膜中碳和氮的量。
由上文所论述的制程产生的含硅薄膜可包括Si、SiN、SiON、SiCN、SiCOH或MSiOx,其中M为如Hf、Zr、Ti、Nb、Ta或Ge的元素,且x可为4,当然视M的氧化态而定。本领域技术人员应认识到通过慎重选择适当有机硅烷前体和共反应物,可获得所要薄膜组成。
获得所要膜厚度后,可对薄膜进行进一步处理,如热退火、炉退火、快速热退火、UV或电子束固化和/或等离子气体暴露。本领域熟练技术人员可想到用于执行这些额外加工步骤的***和方法。举例而言,含硅薄膜可在惰性氛围、含H氛围、含N氛围、含O氛围或其组合下暴露于约200℃至约1000℃范围内的温度,持续约0.1秒至约7200秒范围内的时间。最优选地,温度为400℃,在含H氛围下持续3600秒。所得薄膜可含有较少杂质,且因此可具有改进的效能特性。可在执行沉积制程的同一反应室中执行退火步骤。或者,可自反应室中移除基底,且在独立装置中执行退火/急骤退火制程。已发现以上后处理方法中的任一种、尤其热退火可有效减少含硅薄膜的碳和氮污染。
实施例
提供以下非限制性实施例以进一步说明本发明的具体实施方案。然而,这些实施例并不意欲包括所有且并不意欲限制本文所述的发明范畴。
实施例1
SiH3(NiPr-amd)的合成:在搅拌下,将甲基锂的***溶液(91mL,1.6M,0.146mol)缓慢添加至N,N'-二异丙基碳化二亚胺(22.5mL,0.145mol)于***(150mL)中的-40℃溶液中。添加完成后,使所得无色悬浮液升温至室温且搅拌三小时以形成无色溶液。在装备有-78℃(干冰/丙酮)冷凝器的独立烧瓶中装入***(100mL)且冷却至-78℃。在搅拌下,一氯甲硅烷(13.2g,0.198mol)缓慢冷凝至第二烧瓶中,随后缓慢添加来自第一步骤的脒基锂溶液。最初观察到一定程度的发烟,随后形成无色沉淀。完成添加后,在剧烈搅拌过夜下使悬浮液缓慢达至室温。经含有硅藻土垫的中等玻璃粉过滤悬浮液且在大气压下使用维格罗管柱(Vigreux column)蒸馏所得无色溶液以移除溶剂。更换接收烧瓶且在-78℃浴中冷却,在25-28℃/200-300毫托下蒸馏得到呈无色液体状的所需产物。产量:7.9g(31.6%)。图1为显示此前体与DiPAS相比在温度变化下的重量损失百分比的TGA图。29Si NMR(80MHz,C6D6,25℃)δ(ppm)=-87.7;1H NMR(400MHz,C6D6,25℃)δ(ppm)=4.73(s,3H,SiH3),3.38(sept.,2H,1JH-H=8.0Hz,NCH(CH3)2),1.40(s,3H,CCH3),1.12(d,12H,1JH-H=8.0Hz,NCH(CH3)2)。
实施例2
SiH3(NtBu-amd)的合成:在装备有-78℃(干冰/丙酮)冷凝器的烧瓶中装入***(100mL)且冷却至-78℃。在搅拌下,一氯甲硅烷(8.9g,0.134mol)缓慢冷凝至烧瓶中。在第二烧瓶中,将甲基锂的***溶液(101mL,1.6M,0.162mol)缓慢添加至N,N'-二-叔丁基碳化二亚胺(25g,0.162mol)于***(100mL)中的-40℃溶液中。添加完成后,使所得脒基锂无色悬浮液升温至室温且搅拌一小时以形成无色溶液。将所得Li-amd溶液冷却至0℃且由套管添加至一氯甲硅烷(MCS)于***中的-78℃溶液中。最初观察到一定程度的发烟,随后形成无色沉淀。完成添加后,在剧烈搅拌下使悬浮液达至室温。
停止搅拌,且使固体沉降随后经具有硅藻土床的中等玻璃粉过滤。将所得无色溶液转移至含有干燥Amberlyst A21树脂(5g)的烧瓶中,略微搅拌且使其在室温下静置14小时。接着,过滤溶液且在大气压下使用短程管柱蒸馏以移除溶剂和高挥发物,从而得到高黏性浅黄色液体。更换接收烧瓶且冷却至-78℃,在55-61℃/100毫托下蒸馏得到呈无色液体状的所需产物,其在室温下静置之后缓慢结晶。产量:14.5g(54.1%)。MP=36℃,29SiNMR(80MHz,C6D6,25℃)δ(ppm)=-117.5;1H NMR(400MHz,C6D6,25℃)δ(ppm)=5.05(s,3H,SiH3),1.79(s,3H,CCH3),1.25(s,9H,NC(CH3)3)。
实施例3
SiH3(NiPr-amd)的ALD:使用实施例1中制备的SiH3(NiPr-amd)执行ALD测试,将该SiH3(NiPr-amd)置放于室温下的容器中。使用典型ALD条件,如在固定于约0.5托的反应器压力下使用臭氧。如图2中所示,在275℃下在纯硅晶圆上评估完全表面饱和及反应情况下的ALD特性。本领域技术人员应认识到不同沉积设备可在不同前体引入时间展现表面饱和。折射率为SiO2薄膜的特性(纯SiO2的折射率为1.46)。由前体引入时间变化引起的折射率变化指示薄膜中的杂质。
应了解,在如所附申请专利范围中所表述的本发明原理和范畴内,本领域熟练技术人员可对本文中已描述且说明以便解释本发明的性质的细节、材料、步骤和部件配置作出许多其他改变。因此,本发明并不意欲限于以上所提供的实施例和/或附图中的特定具体实施方案。
Claims (14)
1.一种含Si薄膜形成前体,其具有下式:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环基且R3可为H、C1-C6烷基、C3-C20芳基或杂环基、氨基、烷氧基或卤素。
2.根据权利要求1的含Si薄膜形成前体,其具有下式:
其中R1和R2可各自独立地为C1-C6烷基。
3.根据权利要求2的含Si薄膜形成前体,其中分子为SiH3(NiPr-amd)。
4.根据权利要求1的含Si薄膜形成前体,其具有下式:
其中R1、R2、R3和R4可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环。
5.根据权利要求1的含Si薄膜形成前体,其具有下式:
其中R1、R2和R3可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环。
6.根据权利要求1的含Si薄膜形成前体,其具有下式:
其中R1和R2可各自独立地为H、C1-C6烷基或C3-C20芳基或杂环且X可为Cl、Br、I或F。
7.一种在基底上沉积含Si层的方法,所述方法包括:
将至少一种根据权利要求1-6中任一项的有机硅烷前体引入其中安置有至少一个基底的反应器中;
使用气相沉积法将至少一部分有机硅烷前体沉积至至少一个基底上以形成含Si层。
8.根据权利要求7的方法,其进一步包含向反应器中引入至少一种共反应物。
9.根据权利要求8的方法,其中共反应物选自:O2、O3、H2O、H2O2、NO、NO2、羧酸、其自由基及其组合,优选经等离子处理的氧气或臭氧。
10.根据权利要求8的方法,其中共反应物选自:H2、NH3、(SiH3)3N、氢化硅烷(如SiH4、Si2H6、Si3H8、Si4H10、Si5H10、Si6H12)、氯硅烷和氯聚硅烷(如SiHCl3、SiH2Cl2、SiH3Cl、Si2Cl6、Si2HCl5、Si3Cl8)、烷基硅烷(如Me2SiH2、Et2SiH2、MeSiH3、EtSiH3)、肼(如N2H4、MeHNNH2、MeHNNHMe)、有机胺(如NMeH2、NEtH2、NMe2H、NEt2H、NMe3、NEt3、(SiMe3)2NH)、吡唑啉、吡啶、含B分子(如B2H6、9-硼双环[3,3,1]壬烷、三甲基硼、三乙基硼、硼吖嗪)、烷基金属(如三甲基铝、三乙基铝、二甲基锌、二乙基锌)、其自由基物质及其混合物。
11.根据权利要求10的方法,其中共反应物选自:H2、NH3、SiH4、Si2H6、Si3H8、SiH2Me2、SiH2Et2、N(SiH3)3、其氢自由基及其混合物。
12.根据权利要求10的方法,其中共反应物选自:SiHCl3、Si2Cl6、Si2HCl5、Si2H2Cl4和环-Si6H6Cl6。
13.根据权利要求7的方法,其中气相沉积法为化学气相沉积法。
14.根据权利要求7的方法,其中气相沉积法为原子层沉积法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261674103P | 2012-07-20 | 2012-07-20 | |
US61/674,103 | 2012-07-20 | ||
PCT/US2013/051244 WO2014015232A1 (en) | 2012-07-20 | 2013-07-19 | Organosilane precursors for ald/cvd silicon-containing film applications |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104080944A true CN104080944A (zh) | 2014-10-01 |
CN104080944B CN104080944B (zh) | 2016-08-24 |
Family
ID=49949268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380007437.1A Active CN104080944B (zh) | 2012-07-20 | 2013-07-19 | 用于ald/cvd含硅薄膜应用的有机硅烷前体 |
Country Status (7)
Country | Link |
---|---|
US (3) | US9593133B2 (zh) |
EP (1) | EP2875166B1 (zh) |
JP (3) | JP6242026B2 (zh) |
KR (3) | KR20150034123A (zh) |
CN (1) | CN104080944B (zh) |
TW (4) | TWI620751B (zh) |
WO (4) | WO2014015248A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104341447A (zh) * | 2014-11-06 | 2015-02-11 | 江南大学 | 一种含n脒基硅化合物及其应用 |
CN110291223A (zh) * | 2017-02-16 | 2019-09-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于形成含Si膜的方法 |
Families Citing this family (407)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10378106B2 (en) | 2008-11-14 | 2019-08-13 | Asm Ip Holding B.V. | Method of forming insulation film by modified PEALD |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US8993460B2 (en) | 2013-01-10 | 2015-03-31 | Novellus Systems, Inc. | Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants |
US9312155B2 (en) | 2011-06-06 | 2016-04-12 | Asm Japan K.K. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US9793148B2 (en) | 2011-06-22 | 2017-10-17 | Asm Japan K.K. | Method for positioning wafers in multiple wafer transport |
US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
US8946830B2 (en) | 2012-04-04 | 2015-02-03 | Asm Ip Holdings B.V. | Metal oxide protective layer for a semiconductor device |
JP6242026B2 (ja) | 2012-07-20 | 2017-12-06 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ald/cvdシリコン含有膜用のオルガノシラン前駆体 |
US9558931B2 (en) | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9659799B2 (en) | 2012-08-28 | 2017-05-23 | Asm Ip Holding B.V. | Systems and methods for dynamic semiconductor process scheduling |
US9021985B2 (en) | 2012-09-12 | 2015-05-05 | Asm Ip Holdings B.V. | Process gas management for an inductively-coupled plasma deposition reactor |
US9324811B2 (en) | 2012-09-26 | 2016-04-26 | Asm Ip Holding B.V. | Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9640416B2 (en) | 2012-12-26 | 2017-05-02 | Asm Ip Holding B.V. | Single-and dual-chamber module-attachable wafer-handling chamber |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US9589770B2 (en) | 2013-03-08 | 2017-03-07 | Asm Ip Holding B.V. | Method and systems for in-situ formation of intermediate reactive species |
US9484191B2 (en) | 2013-03-08 | 2016-11-01 | Asm Ip Holding B.V. | Pulsed remote plasma method and system |
US9824881B2 (en) * | 2013-03-14 | 2017-11-21 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US9564309B2 (en) | 2013-03-14 | 2017-02-07 | Asm Ip Holding B.V. | Si precursors for deposition of SiN at low temperatures |
US8993054B2 (en) | 2013-07-12 | 2015-03-31 | Asm Ip Holding B.V. | Method and system to reduce outgassing in a reaction chamber |
TW201509799A (zh) | 2013-07-19 | 2015-03-16 | Air Liquide | 用於ald/cvd含矽薄膜應用之六配位含矽前驅物 |
US9382268B1 (en) | 2013-07-19 | 2016-07-05 | American Air Liquide, Inc. | Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications |
US9018111B2 (en) | 2013-07-22 | 2015-04-28 | Asm Ip Holding B.V. | Semiconductor reaction chamber with plasma capabilities |
US9793115B2 (en) | 2013-08-14 | 2017-10-17 | Asm Ip Holding B.V. | Structures and devices including germanium-tin films and methods of forming same |
US9284642B2 (en) * | 2013-09-19 | 2016-03-15 | Asm Ip Holding B.V. | Method for forming oxide film by plasma-assisted processing |
US9240412B2 (en) | 2013-09-27 | 2016-01-19 | Asm Ip Holding B.V. | Semiconductor structure and device and methods of forming same using selective epitaxial process |
US9556516B2 (en) | 2013-10-09 | 2017-01-31 | ASM IP Holding B.V | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT |
US10179947B2 (en) | 2013-11-26 | 2019-01-15 | Asm Ip Holding B.V. | Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition |
US9895715B2 (en) | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US9447498B2 (en) | 2014-03-18 | 2016-09-20 | Asm Ip Holding B.V. | Method for performing uniform processing in gas system-sharing multiple reaction chambers |
US10167557B2 (en) | 2014-03-18 | 2019-01-01 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
KR20150109984A (ko) * | 2014-03-21 | 2015-10-02 | 삼성전자주식회사 | 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법 |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9404587B2 (en) | 2014-04-24 | 2016-08-02 | ASM IP Holding B.V | Lockout tagout for semiconductor vacuum valve |
JP6494411B2 (ja) * | 2014-06-24 | 2019-04-03 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9543180B2 (en) | 2014-08-01 | 2017-01-10 | Asm Ip Holding B.V. | Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US9576792B2 (en) * | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
KR102461078B1 (ko) | 2014-10-02 | 2022-10-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Ald/cvd 규소-함유 필름 응용을 위한 오르가노디실란 전구체 |
US9875888B2 (en) * | 2014-10-03 | 2018-01-23 | Applied Materials, Inc. | High temperature silicon oxide atomic layer deposition technology |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US9657845B2 (en) | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
KR102079501B1 (ko) * | 2014-10-24 | 2020-02-20 | 버슘머트리얼즈 유에스, 엘엘씨 | 규소-함유 필름의 증착을 위한 조성물 및 이를 사용하는 방법 |
CN104447838B (zh) * | 2014-11-06 | 2017-12-29 | 江南大学 | 一种β二亚胺基硅化合物及其应用 |
KR102300403B1 (ko) | 2014-11-19 | 2021-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
WO2016094711A2 (en) * | 2014-12-13 | 2016-06-16 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications and methods of using the same |
KR102263121B1 (ko) | 2014-12-22 | 2021-06-09 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 및 그 제조 방법 |
US9478415B2 (en) | 2015-02-13 | 2016-10-25 | Asm Ip Holding B.V. | Method for forming film having low resistance and shallow junction depth |
US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
US10529542B2 (en) | 2015-03-11 | 2020-01-07 | Asm Ip Holdings B.V. | Cross-flow reactor and method |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US9777025B2 (en) * | 2015-03-30 | 2017-10-03 | L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude | Si-containing film forming precursors and methods of using the same |
US10157735B2 (en) * | 2015-05-22 | 2018-12-18 | Dow Silicones Corporation | Pentachlorodisilane |
KR102393833B1 (ko) * | 2015-06-16 | 2022-05-02 | 버슘머트리얼즈 유에스, 엘엘씨 | 할라이도실란 화합물 및 조성물 및 이를 사용하여 규소-함유 막을 증착시키기 위한 공정 |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10043661B2 (en) | 2015-07-13 | 2018-08-07 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US9899291B2 (en) | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
US10083836B2 (en) | 2015-07-24 | 2018-09-25 | Asm Ip Holding B.V. | Formation of boron-doped titanium metal films with high work function |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10087525B2 (en) | 2015-08-04 | 2018-10-02 | Asm Ip Holding B.V. | Variable gap hard stop design |
US20170040158A1 (en) * | 2015-08-06 | 2017-02-09 | Applied Materials, Inc. | Low temperature ald on semiconductor and metallic surfaces |
US9647114B2 (en) | 2015-08-14 | 2017-05-09 | Asm Ip Holding B.V. | Methods of forming highly p-type doped germanium tin films and structures and devices including the films |
US10410857B2 (en) | 2015-08-24 | 2019-09-10 | Asm Ip Holding B.V. | Formation of SiN thin films |
US9711345B2 (en) | 2015-08-25 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming aluminum nitride-based film by PEALD |
US9960072B2 (en) | 2015-09-29 | 2018-05-01 | Asm Ip Holding B.V. | Variable adjustment for precise matching of multiple chamber cavity housings |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US9909214B2 (en) | 2015-10-15 | 2018-03-06 | Asm Ip Holding B.V. | Method for depositing dielectric film in trenches by PEALD |
US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US10322384B2 (en) | 2015-11-09 | 2019-06-18 | Asm Ip Holding B.V. | Counter flow mixer for process chamber |
US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
US9905420B2 (en) | 2015-12-01 | 2018-02-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium tin films and structures and devices including the films |
US9607837B1 (en) | 2015-12-21 | 2017-03-28 | Asm Ip Holding B.V. | Method for forming silicon oxide cap layer for solid state diffusion process |
US9633838B2 (en) * | 2015-12-28 | 2017-04-25 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition of silicon-containing films using penta-substituted disilanes |
US9735024B2 (en) | 2015-12-28 | 2017-08-15 | Asm Ip Holding B.V. | Method of atomic layer etching using functional group-containing fluorocarbon |
US9627221B1 (en) | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
WO2017127044A1 (en) * | 2016-01-18 | 2017-07-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Si-containing film forming compositions for ald/cvd of silicon-containing films |
GB201601221D0 (en) * | 2016-01-22 | 2016-03-09 | Semblant Ltd | Coated electrical assembly |
US10468251B2 (en) | 2016-02-19 | 2019-11-05 | Asm Ip Holding B.V. | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US9754779B1 (en) | 2016-02-19 | 2017-09-05 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
WO2017149604A1 (ja) * | 2016-02-29 | 2017-09-08 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、および記録媒体 |
US10501866B2 (en) | 2016-03-09 | 2019-12-10 | Asm Ip Holding B.V. | Gas distribution apparatus for improved film uniformity in an epitaxial system |
US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
US9892913B2 (en) | 2016-03-24 | 2018-02-13 | Asm Ip Holding B.V. | Radial and thickness control via biased multi-port injection settings |
US10087522B2 (en) | 2016-04-21 | 2018-10-02 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10032628B2 (en) | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
KR102592471B1 (ko) | 2016-05-17 | 2023-10-20 | 에이에스엠 아이피 홀딩 비.브이. | 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법 |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9793135B1 (en) | 2016-07-14 | 2017-10-17 | ASM IP Holding B.V | Method of cyclic dry etching using etchant film |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10381226B2 (en) | 2016-07-27 | 2019-08-13 | Asm Ip Holding B.V. | Method of processing substrate |
US10177025B2 (en) | 2016-07-28 | 2019-01-08 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10395919B2 (en) | 2016-07-28 | 2019-08-27 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10090316B2 (en) | 2016-09-01 | 2018-10-02 | Asm Ip Holding B.V. | 3D stacked multilayer semiconductor memory using doped select transistor channel |
US11479858B2 (en) | 2016-10-12 | 2022-10-25 | Dow Silicones Corporation | Thio(di)silanes |
US10410943B2 (en) | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10435790B2 (en) | 2016-11-01 | 2019-10-08 | Asm Ip Holding B.V. | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10134757B2 (en) | 2016-11-07 | 2018-11-20 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
US10340135B2 (en) | 2016-11-28 | 2019-07-02 | Asm Ip Holding B.V. | Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9916980B1 (en) | 2016-12-15 | 2018-03-13 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
TWI671792B (zh) | 2016-12-19 | 2019-09-11 | 荷蘭商Asm知識產權私人控股有限公司 | 基板處理設備 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10049882B1 (en) | 2017-01-25 | 2018-08-14 | Samsung Electronics Co., Ltd. | Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
US11094535B2 (en) | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
US10043656B1 (en) | 2017-03-10 | 2018-08-07 | Lam Research Corporation | Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide |
US9911595B1 (en) | 2017-03-17 | 2018-03-06 | Lam Research Corporation | Selective growth of silicon nitride |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US10283353B2 (en) | 2017-03-29 | 2019-05-07 | Asm Ip Holding B.V. | Method of reforming insulating film deposited on substrate with recess pattern |
US10103040B1 (en) | 2017-03-31 | 2018-10-16 | Asm Ip Holding B.V. | Apparatus and method for manufacturing a semiconductor device |
USD830981S1 (en) | 2017-04-07 | 2018-10-16 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate processing apparatus |
US10559461B2 (en) | 2017-04-19 | 2020-02-11 | Lam Research Corporation | Selective deposition with atomic layer etch reset |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US11501965B2 (en) * | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10446393B2 (en) | 2017-05-08 | 2019-10-15 | Asm Ip Holding B.V. | Methods for forming silicon-containing epitaxial layers and related semiconductor device structures |
WO2018213018A1 (en) | 2017-05-16 | 2018-11-22 | Asm Ip Holding B.V. | Selective peald of oxide on dielectric |
US10504742B2 (en) | 2017-05-31 | 2019-12-10 | Asm Ip Holding B.V. | Method of atomic layer etching using hydrogen plasma |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US10236177B1 (en) | 2017-08-22 | 2019-03-19 | ASM IP Holding B.V.. | Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
KR102347201B1 (ko) * | 2017-10-25 | 2022-01-04 | 한국화학연구원 | 실리콘 아미노아미드 이미드 화합물, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10460930B2 (en) | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
TWI791689B (zh) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | 包括潔淨迷你環境之裝置 |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
EP3957769A1 (en) * | 2017-12-20 | 2022-02-23 | Basf Se | Process for the generation of metal-containing films |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
WO2019142055A2 (en) | 2018-01-19 | 2019-07-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
JP7124098B2 (ja) | 2018-02-14 | 2022-08-23 | エーエスエム・アイピー・ホールディング・ベー・フェー | 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法 |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
KR20200118504A (ko) | 2018-03-02 | 2020-10-15 | 램 리써치 코포레이션 | 가수분해를 사용한 선택적인 증착 |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
KR20190129718A (ko) | 2018-05-11 | 2019-11-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
JP7515411B2 (ja) | 2018-06-27 | 2024-07-12 | エーエスエム・アイピー・ホールディング・ベー・フェー | 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法 |
KR20210024462A (ko) | 2018-06-27 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
KR102686758B1 (ko) | 2018-06-29 | 2024-07-18 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US20200040454A1 (en) * | 2018-08-06 | 2020-02-06 | Lam Research Corporation | Method to increase deposition rate of ald process |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10367415B1 (en) * | 2018-08-28 | 2019-07-30 | Ferric Inc. | Processor module with integrated packaged power converter |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102018318B1 (ko) * | 2018-09-11 | 2019-09-04 | 주식회사 유진테크 | 박막 형성 방법 |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的***及其使用方法 |
JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP7509548B2 (ja) | 2019-02-20 | 2024-07-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
JP2021109175A (ja) | 2020-01-06 | 2021-08-02 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Asm Ip控股公司 | 專用於零件清潔的系統 |
JP7386732B2 (ja) * | 2020-03-06 | 2023-11-27 | 東京エレクトロン株式会社 | 成膜方法 |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
KR20210117157A (ko) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
TW202140832A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽在金屬表面上之選擇性沉積 |
TW202140833A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 相對於金屬表面在介電表面上之氧化矽的選擇性沉積 |
TW202204658A (zh) | 2020-03-30 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 在兩不同表面上同時選擇性沉積兩不同材料 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
TWI723856B (zh) * | 2020-04-28 | 2021-04-01 | 逢甲大學 | 大氣常壓低溫電漿沉積抗刮疏水層的方法 |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
JP2021177545A (ja) | 2020-05-04 | 2021-11-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
KR20210145080A (ko) | 2020-05-22 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202202649A (zh) | 2020-07-08 | 2022-01-16 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
TW202235675A (zh) | 2020-11-30 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及基板處理設備 |
KR20220081905A (ko) | 2020-12-09 | 2022-06-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 증착용 실리콘 전구체 |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
EP4327161A1 (en) * | 2021-04-23 | 2024-02-28 | Entegris, Inc. | High quantum efficiency dry resist for low exposure dose of euv radiation |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US20220406595A1 (en) * | 2021-06-22 | 2022-12-22 | Applied Materials, Inc. | Novel oxidants and strained-ring precursors |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101078109A (zh) * | 2006-05-23 | 2007-11-28 | 气体产品与化学公司 | 从有机氨基硅烷前体制备氧化硅薄膜的方法 |
CN102057077A (zh) * | 2008-06-05 | 2011-05-11 | 乔治洛德方法研究和开发液化空气有限公司 | 含镧系元素的前体的制备和含镧系元素的薄膜的沉积 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2590039A (en) | 1948-07-30 | 1952-03-18 | Socony Vacuum Oil Co Inc | Reaction of organosiliconhalides with organodithiols and diselenyl substituted organo compounds, and products thereof |
NL126402C (zh) | 1964-11-16 | |||
US4491669A (en) * | 1980-11-12 | 1985-01-01 | Petrarch Systems Inc. | Mixed alkoxyaminosilanes, methods of making same and vulcanizing silicons prepared therefrom |
FR2575466B1 (fr) | 1984-12-27 | 1987-02-20 | Centre Nat Rech Scient | Nouveaux complexes de silicium hexacoordines, leur procede de preparation et leur application |
JPH06132284A (ja) | 1992-10-22 | 1994-05-13 | Kawasaki Steel Corp | 半導体装置の保護膜形成方法 |
JPH06132276A (ja) | 1992-10-22 | 1994-05-13 | Kawasaki Steel Corp | 半導体膜形成方法 |
JP2716330B2 (ja) | 1992-11-13 | 1998-02-18 | セントラル硝子株式会社 | 低反射ガラスおよびその製法 |
JP2000195801A (ja) * | 1998-12-24 | 2000-07-14 | Fujitsu Ltd | 半導体装置の製造方法 |
US6649083B1 (en) | 1999-08-12 | 2003-11-18 | Board Of Trustees Of Michigan State University | Combined porous organic and inorganic oxide materials prepared by non-ionic surfactant templating route |
US6736993B1 (en) | 2000-04-18 | 2004-05-18 | Advanced Technology Materials, Inc. | Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same |
US7005392B2 (en) | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US6391803B1 (en) | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
US20030118725A1 (en) * | 2001-11-02 | 2003-06-26 | Shipley Company, L.L.C. | Precursor compounds for metal oxide film deposition and methods of film deposition using the same |
JP4358492B2 (ja) | 2002-09-25 | 2009-11-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
KR20150067397A (ko) | 2002-11-15 | 2015-06-17 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
TWI282124B (en) * | 2002-11-28 | 2007-06-01 | Tosoh Corp | Insulating film material containing an organic silane compound, its production method and semiconductor device |
US7125582B2 (en) | 2003-07-30 | 2006-10-24 | Intel Corporation | Low-temperature silicon nitride deposition |
JP2005213633A (ja) | 2004-02-02 | 2005-08-11 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US7098150B2 (en) | 2004-03-05 | 2006-08-29 | Air Liquide America L.P. | Method for novel deposition of high-k MSiON dielectric films |
US20060045986A1 (en) | 2004-08-30 | 2006-03-02 | Hochberg Arthur K | Silicon nitride from aminosilane using PECVD |
US7332618B2 (en) | 2004-09-28 | 2008-02-19 | Praxair Technology, Inc. | Organometallic precursor compounds |
JP2006261434A (ja) | 2005-03-17 | 2006-09-28 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | シリコン酸化膜の形成方法 |
US7875556B2 (en) | 2005-05-16 | 2011-01-25 | Air Products And Chemicals, Inc. | Precursors for CVD silicon carbo-nitride and silicon nitride films |
JP4554446B2 (ja) | 2005-06-21 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
DE102006029430A1 (de) * | 2006-06-27 | 2008-01-03 | Wacker Chemie Ag | Verfahren zur Herstellung von siliciumorganischen Verbindungen durch Hydrosilylierung in ionischen Flüssigkeiten |
US8101788B2 (en) * | 2006-09-29 | 2012-01-24 | Air Liquide Electronics U.S. Lp | Silicon precursors and method for low temperature CVD of silicon-containing films |
EP2511280A1 (en) * | 2006-11-02 | 2012-10-17 | Advanced Technology Materials, Inc. | Germanium amidinate complexes useful for CVD/ALD of metal thin films |
US20080207007A1 (en) | 2007-02-27 | 2008-08-28 | Air Products And Chemicals, Inc. | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films |
WO2008128141A2 (en) | 2007-04-12 | 2008-10-23 | Advanced Technology Materials, Inc. | Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd |
JP2011511881A (ja) | 2007-06-28 | 2011-04-14 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 二酸化ケイ素ギャップ充填材のための前駆体 |
US9034105B2 (en) | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
US8129555B2 (en) | 2008-08-12 | 2012-03-06 | Air Products And Chemicals, Inc. | Precursors for depositing silicon-containing films and methods for making and using same |
KR101308572B1 (ko) | 2009-07-21 | 2013-09-13 | 주식회사 유엠티 | 실리콘을 함유하는 박막 증착을 위한 실리콘 전구체 제조 방법 |
KR20120060843A (ko) * | 2009-08-14 | 2012-06-12 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 박막 증착용 실란 블렌드 |
US7989365B2 (en) * | 2009-08-18 | 2011-08-02 | Applied Materials, Inc. | Remote plasma source seasoning |
US8535760B2 (en) | 2009-09-11 | 2013-09-17 | Air Products And Chemicals, Inc. | Additives to silane for thin film silicon photovoltaic devices |
US8932674B2 (en) | 2010-02-17 | 2015-01-13 | American Air Liquide, Inc. | Vapor deposition methods of SiCOH low-k films |
WO2011122583A1 (ja) | 2010-03-29 | 2011-10-06 | 楽天株式会社 | サーバ装置、情報提供方法、情報提供プログラム、情報提供プログラムが記録された記録媒体、及び情報提供システム |
KR101226876B1 (ko) | 2010-04-01 | 2013-01-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 아미노-금속 및 할로겐화 금속 전구체의 조합을 사용한 금속 질화물 함유 필름 퇴적 |
US8404878B2 (en) * | 2010-04-07 | 2013-03-26 | American Air Liquide, Inc. | Titanium-containing precursors for vapor deposition |
US8912353B2 (en) | 2010-06-02 | 2014-12-16 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for depositing films comprising same |
EP2444405A1 (en) | 2010-10-07 | 2012-04-25 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal compounds for deposition of chalcogenide films at low temperature |
US20120277457A1 (en) | 2010-10-12 | 2012-11-01 | Air Products And Chemicals, Inc. | Aminosilanes and methods for making same |
KR20120078909A (ko) | 2011-01-03 | 2012-07-11 | 닛산 가가쿠 고교 가부시키 가이샤 | 신규한 유기아미노 규소 화합물 및 이를 이용한 규소 함유 박막 |
EP2673280B1 (en) | 2011-02-05 | 2016-12-21 | Bridgestone Corporation | Metal complex catalysts and polymerization methods employing same |
WO2012176989A1 (en) | 2011-06-24 | 2012-12-27 | Up Chemical Co., Ltd. | A diamine compound or its salt, preparing method of the same, and uses of the same |
US8993072B2 (en) | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
DE102012002408B4 (de) | 2012-02-09 | 2015-09-24 | Fachhochschule Düsseldorf | Messanordnung und Verfahren zur Erfassung der Kraftbeanspruchung bei einem biegeweichen Objekt |
JP6242026B2 (ja) | 2012-07-20 | 2017-12-06 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Ald/cvdシリコン含有膜用のオルガノシラン前駆体 |
TW201509799A (zh) | 2013-07-19 | 2015-03-16 | Air Liquide | 用於ald/cvd含矽薄膜應用之六配位含矽前驅物 |
US10453675B2 (en) | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
CN104447838B (zh) | 2014-11-06 | 2017-12-29 | 江南大学 | 一种β二亚胺基硅化合物及其应用 |
CN104341447B (zh) | 2014-11-06 | 2017-06-16 | 江南大学 | 一种含n脒基硅化合物及其应用 |
-
2013
- 2013-07-19 JP JP2015523276A patent/JP6242026B2/ja active Active
- 2013-07-19 WO PCT/US2013/051264 patent/WO2014015248A1/en active Application Filing
- 2013-07-19 US US14/415,647 patent/US9593133B2/en active Active
- 2013-07-19 WO PCT/US2013/051255 patent/WO2014015241A1/en active Application Filing
- 2013-07-19 KR KR1020147023486A patent/KR20150034123A/ko not_active Application Discontinuation
- 2013-07-19 CN CN201380007437.1A patent/CN104080944B/zh active Active
- 2013-07-19 WO PCT/US2013/051244 patent/WO2014015232A1/en active Application Filing
- 2013-07-19 JP JP2015523277A patent/JP2015528011A/ja active Pending
- 2013-07-19 EP EP13819216.6A patent/EP2875166B1/en active Active
- 2013-07-19 JP JP2015523280A patent/JP2015525774A/ja active Pending
- 2013-07-19 KR KR1020157001394A patent/KR20150036122A/ko not_active Application Discontinuation
- 2013-07-19 US US14/372,105 patent/US9371338B2/en active Active
- 2013-07-19 KR KR1020157001339A patent/KR20150036114A/ko not_active Application Discontinuation
- 2013-07-19 WO PCT/US2013/051249 patent/WO2014015237A1/en active Application Filing
- 2013-07-19 US US14/415,657 patent/US9938303B2/en active Active
- 2013-07-22 TW TW102126078A patent/TWI620751B/zh active
- 2013-07-22 TW TW102126082A patent/TWI631129B/zh active
- 2013-07-22 TW TW102126076A patent/TWI586678B/zh active
- 2013-07-22 TW TW102126083A patent/TWI579292B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101078109A (zh) * | 2006-05-23 | 2007-11-28 | 气体产品与化学公司 | 从有机氨基硅烷前体制备氧化硅薄膜的方法 |
CN102057077A (zh) * | 2008-06-05 | 2011-05-11 | 乔治洛德方法研究和开发液化空气有限公司 | 含镧系元素的前体的制备和含镧系元素的薄膜的沉积 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104341447A (zh) * | 2014-11-06 | 2015-02-11 | 江南大学 | 一种含n脒基硅化合物及其应用 |
CN104341447B (zh) * | 2014-11-06 | 2017-06-16 | 江南大学 | 一种含n脒基硅化合物及其应用 |
CN110291223A (zh) * | 2017-02-16 | 2019-09-27 | 乔治洛德方法研究和开发液化空气有限公司 | 用于形成含Si膜的方法 |
Also Published As
Publication number | Publication date |
---|---|
US9938303B2 (en) | 2018-04-10 |
EP2875166B1 (en) | 2018-04-11 |
TWI586678B (zh) | 2017-06-11 |
EP2875166A1 (en) | 2015-05-27 |
US9371338B2 (en) | 2016-06-21 |
CN104080944B (zh) | 2016-08-24 |
KR20150036114A (ko) | 2015-04-07 |
KR20150034123A (ko) | 2015-04-02 |
TW201410690A (zh) | 2014-03-16 |
WO2014015232A1 (en) | 2014-01-23 |
US9593133B2 (en) | 2017-03-14 |
JP2015525773A (ja) | 2015-09-07 |
KR20150036122A (ko) | 2015-04-07 |
TWI579292B (zh) | 2017-04-21 |
TW201412762A (zh) | 2014-04-01 |
JP2015528011A (ja) | 2015-09-24 |
JP2015525774A (ja) | 2015-09-07 |
TWI631129B (zh) | 2018-08-01 |
TW201412763A (zh) | 2014-04-01 |
TW201410689A (zh) | 2014-03-16 |
TWI620751B (zh) | 2018-04-11 |
WO2014015237A1 (en) | 2014-01-23 |
WO2014015241A1 (en) | 2014-01-23 |
US20150166577A1 (en) | 2015-06-18 |
US20150004317A1 (en) | 2015-01-01 |
US20150166576A1 (en) | 2015-06-18 |
WO2014015248A1 (en) | 2014-01-23 |
JP6242026B2 (ja) | 2017-12-06 |
EP2875166A4 (en) | 2016-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104080944B (zh) | 用于ald/cvd含硅薄膜应用的有机硅烷前体 | |
JP6310018B2 (ja) | ハロゲン化オルガノアミノシラン前駆体及びそれを含む膜の堆積方法 | |
US9822132B2 (en) | Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications | |
CN107002236B (zh) | 用于沉积含Si膜的碳硅烷取代的胺前体以及其方法 | |
EP2669249B1 (en) | Method for depositing silicon-containing films using organoaminodisilane precursors | |
EP2818474B1 (en) | Aza-polysilane precursors and methods for depositing films comprising same | |
EP2860182B1 (en) | Organoaminosilane precursors and methods for depositing films comprising same | |
KR101470876B1 (ko) | 오가노아미노실란 전구체 및 이를 제조하고 사용하는 방법 | |
EP2669248B1 (en) | Organoaminodisilane precursors and methods for depositing films comprising same | |
KR101820397B1 (ko) | 알콕시아미노실란 화합물 및 이의 응용품 | |
CN107667187A (zh) | 用于形成含硅和氧的薄膜的汽相沉积方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |