CN104064649A - Light-emitting diode electrode structure and manufacturing method thereof - Google Patents
Light-emitting diode electrode structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN104064649A CN104064649A CN201310088391.2A CN201310088391A CN104064649A CN 104064649 A CN104064649 A CN 104064649A CN 201310088391 A CN201310088391 A CN 201310088391A CN 104064649 A CN104064649 A CN 104064649A
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- China
- Prior art keywords
- light
- emitting diode
- electrode layer
- electrode structure
- alloy
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 30
- 238000004020 luminiscence type Methods 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 230000000295 complement effect Effects 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229910000952 Be alloy Inorganic materials 0.000 claims description 3
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 3
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 3
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 150000002830 nitrogen compounds Chemical class 0.000 claims description 3
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a light-emitting diode electrode structure and a manufacturing method thereof. The light-emitting diode electrode structure comprises a light-emitting assembly. An n-electrode layer is arranged below the light-emitting assembly. A p-electrode layer is arranged above the light-emitting assembly. A p-welding-disc is arranged above the p-electrode layer. A barrier layer is arranged between the p-electrode layer and the p-welding-disc. The barrier layer is additionally arranged between the p-electrode layer and the welding disc in an existing light-emitting diode P-electrode structure so that an alignment error is reduced, the p-electrode layer, the barrier layer and the p-welding-disc are completely aligned, and thus production efficiency is enhanced and product fraction defective is reduced.
Description
Technical field
The invention belongs to light-emitting diode manufacturing technology field, be specifically related to a kind of light-emitting diode electrode structure and manufacture method thereof.
Background technology
Light-emitting diode has owing to possessing that the life-span is long, volume is little, caloric value is low, power consumption is few, reaction speed is fast, without width is penetrated and monochromaticjty is luminous characteristic and advantage, be therefore widely used in every products such as indicator light, advertising billboard, traffic signal light, automobile lamp, display pannel, communication appliance, consumer electronics.
Light emitting diode construction of the prior art as shown in Figure 2, mainly by n electrode layer, luminescence component, p electrode layer and p pad layer, formed, wherein P electrode structure only includes p electrode layer and p pad, because p electrode layer and p pad are to separate manufacture when producing, will cause alignment error like this, increase the fraction defective of product.
Summary of the invention
Goal of the invention: the object of the invention is in order to solve deficiency of the prior art, a kind of light-emitting diode electrode structure and manufacture method thereof of enhancing productivity and reducing product fraction defective is provided.
Technical scheme: a kind of light-emitting diode electrode structure of the present invention, comprise luminescence component, described luminescence component below is provided with n electrode layer, and described luminescence component top is provided with p electrode layer, described p electrode layer top is provided with p pad, between described p electrode layer and p pad, is provided with barrier layer.
As preferably, the thickness of described barrier layer is 0.1～1 μ m.
As preferably, the material of described barrier layer is the alloy of titanium, tungsten, tantalum, molybdenum above-mentioned material, or the silicon compound of above-mentioned material, nitrogen compound or silicon-nitrogen compound.
As preferably, described p electrode layer is golden kirsite, golden beryllium alloy or titanium platinum alloy.
As preferably, the alloy of the alloy of the alloy that described p pad is titanium and aluminium, titanium and gold or titanium, aluminium and gold, the gross thickness of described p pad is 0.5 ~ 3.0 μ m.
The method of manufacturing above-mentioned light-emitting diode electrode structure, comprises the steps:
(1) in the Window layer of semiconductor lamination, deposit p electrode layer material;
(2) deposit barrier layers material on p electrode layer;
(3) on barrier layer, deposit p pad material;
(4) micro-shadow: at a surface-coated photosensitive material of light-transmissive substrates; Above this surface, place light shield, this light shield is provided with the pattern identical with described pattern; Exposure: directional light is optionally exposed to photosensitive material through light shield, make on the surface that is transferred to light-transmissive substrates that the pattern of light shield is complete; Develop, make photosensitive material obtain the pattern identical or complementary with mask pattern;
(5) dry-etching: described photosensitive material is carried out to dry-etching, make described P electrode structure produce a pattern identical or complementary with mask pattern;
(6) carry out annealing operation to obtain nurse difficult to understand contact: the operation of annealing 10 seconds to 3 minutes or rapid thermal anneler in the boiler tube of 300-550 ℃ are carried out in 1 second to 1 minute.
Beneficial effect: increased barrier layer between the p electrode layer of the present invention in existing LED P electrode structure and pad, reduced the error of aiming at, therefore make p electrode layer, barrier layer and p pad complete matching, improved production efficiency and reduced the fraction defective of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of one embodiment of the invention.
Fig. 2 is the structural representation of light-emitting diode in prior art.
Embodiment
A kind of light-emitting diode electrode structure as shown in Figure 1, comprise luminescence component 2, luminescence component 2 belows are provided with n electrode layer 1, luminescence component 2 tops are provided with p electrode layer 3, p electrode layer 3 tops are provided with p pad 5, between p electrode layer 3 and p pad 5, be provided with barrier layer 4, the thickness of barrier layer 4 is 0.1～1 μ m, the material of barrier layer 4 is titanium, tungsten, tantalum, the alloy of molybdenum above-mentioned material, TiW for example, TaW, or the silicon compound of above-mentioned material, nitrogen compound or silicon-nitrogen compound, TiN for example, WN, TaN, TaSiN, WSiN, TWN, p electrode layer 3 is golden kirsite, gold beryllium alloy or titanium platinum alloy, p pad 5 is the alloy of titanium and aluminium, titanium and golden alloy or titanium, aluminium and golden alloy, the gross thickness of p pad 5 is 0.5 ~ 3.0 μ m.The technique of producing this light-emitting diode electrode structure, comprises the steps:
(1) in the Window layer of semiconductor lamination, deposit p electrode layer material;
(2) deposit barrier layers material on p electrode layer;
(3) on barrier layer, deposit p pad material;
(4) micro-shadow: at a surface-coated photosensitive material of light-transmissive substrates; Above this surface, place light shield, this light shield is provided with the pattern identical with described pattern; Exposure: directional light is optionally exposed to photosensitive material through light shield, make on the surface that is transferred to light-transmissive substrates that the pattern of light shield is complete; Develop, make photosensitive material obtain the pattern identical or complementary with mask pattern;
(5) dry-etching: described photosensitive material is carried out to dry-etching, make described P electrode structure produce a pattern identical or complementary with mask pattern;
(6) carry out annealing operation to obtain nurse difficult to understand contact: the operation of annealing 10 seconds to 3 minutes or rapid thermal anneler in the boiler tube of 300-550 ℃ are carried out in 1 second to 1 minute.
Claims (6)
1. a light-emitting diode electrode structure, comprise luminescence component (2), described luminescence component (2) below is provided with n electrode layer (1), it is characterized in that: described luminescence component (2) top is provided with p electrode layer (3), described p electrode layer (3) top is provided with p pad (5), between described p electrode layer (3) and p pad (5), is provided with barrier layer (4).
2. a kind of light-emitting diode electrode structure according to claim 1, is characterized in that: the thickness of described barrier layer (4) is 0.1～1 μ m.
3. a kind of light-emitting diode electrode structure according to claim 1, is characterized in that: the material of described barrier layer (4) is the alloy of titanium, tungsten, tantalum, molybdenum above-mentioned material, or the silicon compound of above-mentioned material, nitrogen compound or silicon-nitrogen compound.
4. light-emitting diode electrode structure according to claim 1, is characterized in that: described p electrode layer (3) is golden kirsite, golden beryllium alloy or titanium platinum alloy.
5. light-emitting diode electrode structure according to claim 1, is characterized in that: the alloy of the alloy of the alloy that described p pad (5) is titanium and aluminium, titanium and gold or titanium, aluminium and gold, the gross thickness of described p pad (5) is 0.5 ~ 3.0 μ m.
6. manufacture the method for light-emitting diode electrode structure as claimed in claim 1, it is characterized in that: comprise the steps:
(1) in the Window layer of semiconductor lamination, deposit p electrode layer material;
(2) deposit barrier layers material on p electrode layer;
(3) on barrier layer, deposit p pad material;
(4) micro-shadow: at a surface-coated photosensitive material of light-transmissive substrates; Above this surface, place light shield, this light shield is provided with the pattern identical with described pattern; Exposure: directional light is optionally exposed to photosensitive material through light shield, make on the surface that is transferred to light-transmissive substrates that the pattern of light shield is complete; Develop, make photosensitive material obtain the pattern identical or complementary with mask pattern;
(5) dry-etching: described photosensitive material is carried out to dry-etching, make described P electrode structure produce a pattern identical or complementary with mask pattern;
(6) carry out annealing operation to obtain nurse difficult to understand contact: the operation of annealing 10 seconds to 3 minutes or rapid thermal anneler in the boiler tube of 300-550 ℃ are carried out in 1 second to 1 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310088391.2A CN104064649A (en) | 2013-03-20 | 2013-03-20 | Light-emitting diode electrode structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310088391.2A CN104064649A (en) | 2013-03-20 | 2013-03-20 | Light-emitting diode electrode structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104064649A true CN104064649A (en) | 2014-09-24 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310088391.2A Pending CN104064649A (en) | 2013-03-20 | 2013-03-20 | Light-emitting diode electrode structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104064649A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064650A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing process thereof |
| CN105355727A (en) * | 2015-10-22 | 2016-02-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light-emitting diode chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335705A (en) * | 1997-05-28 | 1998-12-18 | Nichia Chem Ind Ltd | Nitride gallium based compound semiconductor element and its manufacturing method |
| US20040026621A1 (en) * | 2002-05-31 | 2004-02-12 | Hayn Armin Heinz | Particle detectors |
| US20050029525A1 (en) * | 2003-08-06 | 2005-02-10 | Atomic Energy Council - Institute Of Nuclear Energy Research | Semiconductor device and method for fabricating the same |
| CN1581519A (en) * | 2003-08-12 | 2005-02-16 | 厦门三安电子有限公司 | Gallium nitride III-V family compound light-emitting diode manufacturing method |
| WO2005057642A1 (en) * | 2003-12-10 | 2005-06-23 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof |
-
2013
- 2013-03-20 CN CN201310088391.2A patent/CN104064649A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335705A (en) * | 1997-05-28 | 1998-12-18 | Nichia Chem Ind Ltd | Nitride gallium based compound semiconductor element and its manufacturing method |
| US20040026621A1 (en) * | 2002-05-31 | 2004-02-12 | Hayn Armin Heinz | Particle detectors |
| US20050029525A1 (en) * | 2003-08-06 | 2005-02-10 | Atomic Energy Council - Institute Of Nuclear Energy Research | Semiconductor device and method for fabricating the same |
| CN1581519A (en) * | 2003-08-12 | 2005-02-16 | 厦门三安电子有限公司 | Gallium nitride III-V family compound light-emitting diode manufacturing method |
| WO2005057642A1 (en) * | 2003-12-10 | 2005-06-23 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064650A (en) * | 2013-03-20 | 2014-09-24 | 江苏扬景光电有限公司 | Light-emitting diode electrode structure and manufacturing process thereof |
| CN105355727A (en) * | 2015-10-22 | 2016-02-24 | 山东浪潮华光光电子股份有限公司 | Preparation method of GaAs-based light-emitting diode chip |
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Application publication date: 20140924 |
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