CN104051572A - High-temperature annealing method for silicon nitride film - Google Patents
High-temperature annealing method for silicon nitride film Download PDFInfo
- Publication number
- CN104051572A CN104051572A CN201410251456.5A CN201410251456A CN104051572A CN 104051572 A CN104051572 A CN 104051572A CN 201410251456 A CN201410251456 A CN 201410251456A CN 104051572 A CN104051572 A CN 104051572A
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- China
- Prior art keywords
- silicon nitride
- nitride film
- annealing method
- silicon
- temperature annealing
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- Pending
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 39
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010408 film Substances 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a high-temperature annealing method for a silicon nitride film. According to the high-temperature annealing method, after a silicon nitride antireflection film is manufactured on the surface of a silicon wafer, high-temperature annealing is conducted on the surface of the silicon wafer. By the adoption of the high-temperature annealing method for the silicon nitride film, the evenness and the compactness of the silicon nitride film can be effectively improved, micro-defects and foreign ions in the silicon wafer are reduced through high-temperature annealing, the passivation effect of the silicon nitride film is improved, and the service life of a minority of carriers of a battery piece is prolonged to a certain extent; in addition, the PID resistance of the battery piece generated after high-temperature annealing can be improved, the important production practice value is achieved, and the competitiveness of an enterprise is improved.
Description
Technical field
The present invention relates to solar cell manufacture technology field, be specifically related to a kind of high annealing method of silicon nitride film.
Background technology
In various solar cells, crystal silicon cell is always in occupation of most important status.In recent years, at crystal-silicon solar cell, obtain great achievement and progress aspect raising the efficiency and reducing costs, further improved its superiority in following photovoltaic industry.
Silicon nitride film is as traditional crystalline silicon solar cell inactivating antireflective film, and the variation of its performance directly affects the transformation efficiency of battery.At present, no matter from producer or user, more and more to the concern of the polarity effect of crystalline silicon battery plate (PID).In the article < < System Voltage Potential Induced Degradation Mechanisms in PV Modules and Methods for Test > > that in July, 2011, NREL delivered at it, PID is had been described in detail.PID phenomenon is understood by more people at present, and has increasing research institution and module manufacturer they are conducted in-depth research and publish an article.PID Free is by many assembly Chang He Battery Plant as one of attraction, and many photovoltaic module users also start only to accept the assembly of PID Free.
Summary of the invention
The high annealing method of a kind of silicon nitride film that the object of the invention is to provide for the problems referred to above, carries out high annealing at silicon chip surface after silicon chip surface is made to silicon nitride anti-reflection film.The inventive method can effectively improve uniformity and the compactness of silicon nitride film, high annealing has reduced microdefect and the foreign ion in silicon chip simultaneously, increased the passivation effect of silicon nitride film, the minority carrier lifetime of cell piece has obtained certain raising like this; In addition, through the cell piece of high annealing, can improve the ability of its anti-PID, there are great production practices and be worth, strengthen the competitiveness of enterprise.
The technical scheme that the high annealing method of a kind of silicon nitride film of the present invention adopts is, after silicon chip surface making silicon nitride anti-reflecting film, silicon chip to be carried out to high annealing.
Described high annealing is that the silicon chip after cvd nitride silicon thin film is put into annealing furnace, passes into protection gas, under hot conditions, keeps a period of time.
Temperature in annealing furnace is 300-1000 ℃.
Further, the temperature in annealing furnace is 500-800 ℃.
Preferably, the temperature in annealing furnace is 600-700 ℃.
Under hot conditions, the retention time is 5-60min.
Under hot conditions, the retention time is 15-30min.
Described protection gas is a kind of in ammonia, silane, hydrogen, nitrogen.
Described silicon chip is polysilicon or polysilicon.
The invention has the beneficial effects as follows: the inventive method can effectively improve uniformity and the compactness of silicon nitride film, high annealing has reduced microdefect and the foreign ion in silicon chip simultaneously, increased the passivation effect of silicon nitride film, the minority carrier lifetime of cell piece has obtained certain raising like this; In addition, through the cell piece of high annealing, can improve the ability of its anti-PID, there are great production practices and be worth, strengthen the competitiveness of enterprise, be applicable to commercial Application.
embodiment:
In order to understand better the present invention, below in conjunction with example, technical scheme of the present invention is described, but the present invention is not limited thereto.
Embodiment 1:
Select polysilicon chip; The arbitrary steps of silicon chip after silicon nitride film is made, puts into annealing furnace by silicon chip, is warming up to 600 ℃, and passes into H
230min anneals; Gained silicon chip adopts silk screen printing, sintering more successively, obtains finished product solar battery sheet.The silicon chip sheet resistance uniformity of the embodiment of the present invention 1 gained silicon chip sheet resistance and prior art is compared, and result is as shown in table 1:
Table 1 silicon chip square resistance
。
Embodiment 2:
Select quasi-monocrystalline silicon; Silicon chip, after silicon nitride film is made, is put into annealing furnace by silicon chip, is warming up to 700 ℃, and passes into H
215min anneals; Gained silicon chip adopts silk screen printing, sintering more successively, obtains finished product solar battery sheet.The cell piece of the embodiment of the present invention 2 gained cell pieces and prior art is compared, and result is as shown in table 2:
Table 2 silicon chip square resistance
。
Claims (9)
1. a high annealing method for silicon nitride film, is characterized in that, at silicon chip surface, makes after silicon nitride anti-reflecting film, and silicon chip is carried out to high annealing.
2. the high annealing method of a kind of silicon nitride film according to claim 1, is characterized in that: described high annealing is that the silicon chip after cvd nitride silicon thin film is put into annealing furnace, passes into protection gas, under hot conditions, keeps a period of time.
3. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: the temperature in annealing furnace is 300-1000 ℃.
4. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: the temperature in annealing furnace is 500-800 ℃.
5. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: the temperature in annealing furnace is 600-700 ℃.
6. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: under hot conditions, the retention time is 5-60min.
7. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: under hot conditions, the retention time is 15-30min.
8. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: described protection gas is a kind of in ammonia, silane, hydrogen, nitrogen.
9. the high annealing method of a kind of silicon nitride film according to claim 2, is characterized in that: described silicon chip is polysilicon or polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251456.5A CN104051572A (en) | 2014-06-09 | 2014-06-09 | High-temperature annealing method for silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410251456.5A CN104051572A (en) | 2014-06-09 | 2014-06-09 | High-temperature annealing method for silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104051572A true CN104051572A (en) | 2014-09-17 |
Family
ID=51504183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410251456.5A Pending CN104051572A (en) | 2014-06-09 | 2014-06-09 | High-temperature annealing method for silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104051572A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256907A (en) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| US20130171763A1 (en) * | 2010-07-15 | 2013-07-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing solar cell and film-producing device |
-
2014
- 2014-06-09 CN CN201410251456.5A patent/CN104051572A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022135A (en) * | 2007-02-09 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Silicon solar battery antireflective thin film |
| US20130171763A1 (en) * | 2010-07-15 | 2013-07-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing solar cell and film-producing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256907A (en) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | Improve the annealing process of PERC high-efficiency battery piece outward appearance small particles |
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Application publication date: 20140917 |