CN102383198B - Three-step variable-temperature diffusion process for silicon cell - Google Patents
Three-step variable-temperature diffusion process for silicon cell Download PDFInfo
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- CN102383198B CN102383198B CN201110308413.2A CN201110308413A CN102383198B CN 102383198 B CN102383198 B CN 102383198B CN 201110308413 A CN201110308413 A CN 201110308413A CN 102383198 B CN102383198 B CN 102383198B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 24
- 239000010703 silicon Substances 0.000 title claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000000630 rising effect Effects 0.000 abstract 3
- 241000694515 Calidris tenuirostris Species 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a three-step variable-temperature diffusion process for a silicon cell, which is realized by the following procedures: placing a silicon chip after etching into a boat, then rising the temperature to be 700-810 DEG C, and introducing large nitrogen, small nitrogen and oxygen to conduct low-temperature pre-deposition diffusion; subsequently rising the temperature to be 810-830 DEG C, and introducing large nitrogen to conduct knot thrusting; and then introducing large nitrogen, small nitrogen and oxygen, and rising the furnace temperature to be 830-870 DEG C to conduct secondary deposition diffusion. A multi-level PN knot structure formed after diffusion can ensure good ohmic contact with a metal gate wire on the one hand, and can have good blue response on the other hand; in addition, a PN knot formed by the method has great knot depth, and the possibility that the PN knot is burnt through, subjected to leakage of electricity and composited can be reduced.
Description
Technical field:
The present invention relates to a kind of crystal-silicon solar cell, particularly crystal silicon battery three step alternating temperature diffusion technologys.
Background technology:
Spreading PN junction processed is the core process that crystal silicon battery is produced, and the performance of PN junction has a great impact the photoelectric conversion efficiency of battery and the long-term using character of battery.Therefore, obtain high photoelectric conversion efficiency and fine quality, just must prepare the PN junction of excellent performance and stable and uniform.
In order to improve the conversion efficiency of crystal-silicon solar cell, the method for making of the PN junction of general enterprises production is at present shallow junction high square resistance technique.But shallow junction high square resistance technique has three fatal defects: the one, sheet resistance is high, and positive silver grating line is bad with the ohmic contact of silicon substrate, causes series resistance excessive, seriously reduces fill factor, curve factor and conversion efficiency; The 2nd, the sheet resistance uniformity of high square resistance technique is wayward, and the unevenness in sheet between sheet is very large, has had a strong impact on the stability of PN junction; The 3rd, tie shallowly, during sintering, silver particles easily enters into interface, causes electric leakage and compound, and fluctuating and lamination easily appears in battery efficiency.
In addition, the diffusion technology of industrial production crystal-silicon solar cell much all adopts constant temperature diffusion technology at present, and the performance of its PN junction does not obtain largest optimization, and open circuit voltage and the short circuit current of battery are lower.Patent CN101707226A discloses a kind of diffusion technology of crystal silicon solar batteries, and this technique is actual is two step High temperature diffusion techniques, has only considered the inhomogeneity impact of diffusion technology on sheet resistance, thereby has had influence on battery efficiency.
Summary of the invention:
The object of the invention is to the above-mentioned deficiency of customer service and a kind of three step alternating temperature diffusion technologys of crystal silicon battery are provided.Avoid the shortcoming of high square resistance shallow junction technology, optimize structure and the performance of PN junction.
The technical scheme that the present invention takes is:
Three step alternating temperature diffusion technologys, comprise that step is as follows:
(1) silicon chip after making herbs into wool being entered be first warmed up to after boat 700～810 ℃ passes into large nitrogen, little nitrogen and oxygen and carries out the diffusion of low temperature pre-deposition;
(2) be warmed up to 810～830 ℃, pass into large nitrogen and carry out knot;
(3) pass into large nitrogen, little nitrogen and oxygen, furnace temperature is elevated to 830～870 ℃ and carries out deposit and spread again.
Three step alternating temperature diffusion technologys of described crystal silicon battery, preferably include step as follows:
(1) silicon chip after making herbs into wool is inserted in quartz boat, upper boat, is warmed up to 700～810 ℃ by body of heater after entering boat, then passes into large nitrogen, little nitrogen and oxygen and carries out the diffusion of low temperature pre-deposition, deposit and spread time 15～20min;
(2) step (1) is elevated to 810～830 ℃ by furnace temperature after completing, and passes into large nitrogen and carries out knot, and the knot time is 10～15min;
(3) knot passes into large nitrogen, little nitrogen and oxygen after complete, furnace temperature is elevated to 830～870 ℃ and carries out deposit and spread again, and be 5～15min diffusion time.
Three step alternating temperature diffusion technologys of above-mentioned crystal silicon battery, pass into the large nitrogen of 5～10slm, the little nitrogen of 0.7～1.5slm, 0.3～1.0slm oxygen in step (1).
Three step alternating temperature diffusion technologys of above-mentioned crystal silicon battery, pass into the large nitrogen of 5～10slm in step (2).
Three step alternating temperature diffusion technologys of above-mentioned crystal silicon battery, pass into the large nitrogen of 5～10slm, the little nitrogen of 0.5～1.5slm and 0.1～0.8slm oxygen in step (3).
The present invention adopts monocrystalline or polycrystalline making herbs into wool silicon chip as diffusion substrates.By low temperature depositing, spread to prepare the doped layer of low concentration; Then the temperature that raises knot, increases the PN junction degree of depth; Finally at high temperature deposit and spread knot again, increase junction depth when increasing the concentration of surperficial phosphorus, to form good ohmic contact with metal grid lines, strengthens the blue response of battery.
PN junction structure after diffusion is: the N that rim surface zona is high phosphorus concentration
++type doped region, this layer can form good ohmic contact with metal grid lines, and sheet resistance is less; The N that is lower phosphorus concentration in subsurface stratum district
+type doped region, this layer has good blue response and lower sheet resistance; Ci rim surface zona is the N-type doped region of low phosphorus concentration, and this layer has good blue response.The multistage PN junction structure forming after diffusion like this, can guarantee to form good ohmic contact with metal grid lines on the one hand; Can there is good blue response on the other hand; In addition, the junction depth of the PN junction that this kind of method forms is larger, can reduce that PN junction burns, electric leakage, compound occurrence probability.
Accompanying drawing explanation
Fig. 1 is the PN junction structure distribution figure that the inventive method makes.
Embodiment
With embodiment, the invention will be further described below.But they are not construed as limiting the invention.
Embodiment 1:
Polysilicon chip after making herbs into wool is inserted in quartz boat to upper boat.After entering boat, furnace temperature is risen to 800 ℃, pass into the large nitrogen of 5slm, the little nitrogen of 0.8slm, 0.3slm oxygen and carry out low temperature pre-deposition after temperature stabilization, sedimentation time is 20min.Then furnace temperature is risen to 830 ℃, pass into the large nitrogen of 6slm and carry out high temperature knot, the knot time is 10min.Furnace temperature is risen to 850 ℃ again, pass into the large nitrogen of 5.5slm, the little nitrogen of 1.0slm, 0.3slm oxygen and carry out deposit and spread again.Finally cool to 830 ℃, pass into the large nitrogen of 6slm and purge, go out boat unloading piece.
Embodiment 2:
Monocrystalline silicon piece after making herbs into wool is inserted to quartz boat, upper boat.After entering boat, furnace temperature is risen to 780 ℃, pass into the large nitrogen of 5slm, the little nitrogen of 1.0slm, 0.3slm oxygen and carry out low temperature pre-deposition after temperature stabilization, sedimentation time is 15min.Then furnace temperature is risen to 820 ℃, pass into the large nitrogen of 6slm and carry out high temperature knot, the knot time is 15min.Furnace temperature is risen to 860 ℃ again, pass into the large nitrogen of 5.5slm, the little nitrogen of 0.5slm, 0.2slm oxygen and carry out deposit and spread again.Finally cool to 830 ℃, pass into the large nitrogen of 6slm and purge, go out boat unloading piece.
Comparative example 1:
Polysilicon chip after making herbs into wool is inserted to quartz boat, upper boat.After entering boat, furnace temperature is risen to 830 ℃, pass into the large nitrogen of 5slm, the little nitrogen of 1.0slm, 0.3slm oxygen and carry out pre-deposition after temperature stabilization, sedimentation time is 15min.And then pass into the large nitrogen of 6slm and carry out knot, the knot time is 15min.Finally cool to 810 ℃, pass into the large nitrogen of 6slm and purge, go out boat unloading piece.
Comparative example 2:
Monocrystalline silicon piece after making herbs into wool is inserted to quartz boat, upper boat.After entering boat, furnace temperature is risen to 830 ℃, pass into the large nitrogen of 5slm, the little nitrogen of 1.0slm, 0.3slm oxygen and carry out pre-deposition after temperature stabilization, sedimentation time is 15min.And then pass into the large nitrogen of 6slm and carry out knot, the knot time is 15min.Finally cool to 810 ℃, pass into the large nitrogen of 6slm and purge, go out boat unloading piece.
Performance test:
By evenly get 5 silicon chips from go out the silicon chip of boat after embodiment 1 technique diffusion, with four pin test instrument probes, test its 5 sheet resistances, result is as follows:
Embodiment 1 silicon chip is carried out to the PROCESS FOR TREATMENT such as etching, plated film and silk-screen sintering, makes and record electrical property after battery and comparative example 1 contrast groups result is as follows:
The electrical performance data contrast of table 1 comparative example 1 and embodiment 1 battery
By evenly get 5 silicon chips from go out the silicon chip of boat after embodiment 2 techniques diffusions, with four pin test instrument probes, test its 5 sheet resistances, result is as follows:
Embodiment 2 silicon chips are carried out to the PROCESS FOR TREATMENT such as etching, plated film and silk-screen sintering, make and record electrical property after battery and comparative example 2 contrast groups results are as follows:
The electrical performance data contrast of table 2 comparative example 2 and embodiment 2 batteries
Claims (1)
1. a technique for PN junction is prepared in three step alternating temperature diffusions of crystal silicon battery, it is characterized in that, comprises that step is as follows:
(1) silicon chip after making herbs into wool is inserted in quartz boat, upper boat, after entering boat, body of heater is warmed up to 700～810 ℃, then pass into large nitrogen, little nitrogen and oxygen and carry out the diffusion of low temperature pre-deposition, deposit and spread time 15～20min, it passes into the large nitrogen of 5～10slm, the little nitrogen of 0.7～1.5slm, 0.3～1.0slm oxygen;
(2) step (1) is elevated to 810～830 ℃ by furnace temperature after completing, and passes into large nitrogen and carries out knot, and the knot time is 10～15min, wherein passes into the large nitrogen of 5～10slm;
(3) knot passes into large nitrogen, little nitrogen and oxygen after complete, furnace temperature is elevated to 830～870 ℃ and carries out deposit and spread again, and be 5～15min diffusion time, wherein passes into the large nitrogen of 5～10slm, the little nitrogen of 0.5～1.5slm and 0.1～0.8slm oxygen.
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Cited By (1)
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|---|---|---|---|---|
| CN108004564A (en) * | 2017-11-29 | 2018-05-08 | 中国矿业大学 | Semiconductor photoelectrode photocatalytic water reaction unit and preparation method based on black silicon PN junction |
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| CN102694070B (en) * | 2012-05-30 | 2015-09-30 | 中建材浚鑫科技股份有限公司 | A kind of PN junction manufacture method of solar cell |
| CN102738305A (en) * | 2012-06-27 | 2012-10-17 | 英利能源（中国）有限公司 | Phosphorus diffusion process for production of crystalline silicon solar cell |
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| EP2048716A2 (en) * | 2007-10-08 | 2009-04-15 | CSI Cells Co. Ltd. | A process of phosphorus diffusion for manufacturing solar cell |
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| CN108004564A (en) * | 2017-11-29 | 2018-05-08 | 中国矿业大学 | Semiconductor photoelectrode photocatalytic water reaction unit and preparation method based on black silicon PN junction |
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